CN106849649A - The IGBT driving power supplies topology of regulation can be independently set - Google Patents
The IGBT driving power supplies topology of regulation can be independently set Download PDFInfo
- Publication number
- CN106849649A CN106849649A CN201611240233.4A CN201611240233A CN106849649A CN 106849649 A CN106849649 A CN 106849649A CN 201611240233 A CN201611240233 A CN 201611240233A CN 106849649 A CN106849649 A CN 106849649A
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- China
- Prior art keywords
- switch element
- electric capacity
- igbt
- transformer
- driving power
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Dc-Dc Converters (AREA)
Abstract
The present invention relates to a kind of IGBT driving power supplies topology that can independently set regulation, current IGBT driving power supplies are all used with the magnitude of voltage of fixed drive power supply, test and related application of the present invention for IGBT, can be according to the demand of application, the size of the supply voltage of regulation control at any time.And pass through feedback, and the sampling of IGBT driving power supplies magnitude of voltage can be read into host computer, when abnormal conditions occur in power supply or IGBT, improve the turn-off capacity to IGBT.Meanwhile, the practicality of the transformer in the topology, the EMI of suppression, the conversion efficiency of the power supply of raising, while the series-parallel modular driving that can meet IGBT is required.
Description
Technical field
The present invention relates to a kind of IGBT driving power supplies topology that can independently set regulation, belong to control power technique fields.
Background technology
In the drive control of IGBT, driving power supply is essential part, and controls the stable relation of power supply to arrive
Whether the operation of IGBT stablizes；Meanwhile, the driving voltage of IGBT is not a fixed value, when under different driving voltages,
The dynamic characteristic of IGBT, the interval of SOA is all different, while also the judgement with short-circuit protection has relation.
In IGBT test checkings, generally require to carry out dynamic and static measurement to the IGBT under different driving voltage, and pass through
The control of host computer reaches the various voltages of testing requirement to driving power supply control.
In some industrial control fields, especially in Fuzzy Neural Network Decoupling control, in Self Adaptive Control regulation, it is necessary to
To the temperature range of IGBT, SOA, loss etc. is configured, it is necessary to pass through to adjust driving voltage in its system operation,
Reach IGBT optimized runnings in systems.
The content of the invention
The purpose of the present invention is to overcome the uncontrollable deficiency of driving power supply present in prior art, there is provided one kind can be certainly
The main IGBT driving power supplies topology for setting regulation, ensure that the precision of supply voltage, increase feedback section, it is ensured that IGBT failures
Or IGBT driving malfunctions can be detected, and can be by dump, while also ensure that IGBT reliabilities of operation and IGBT
The application for needing power supply to adjust in test.
According to the technical scheme that the present invention is provided, the IGBT driving power supplies topology that regulation can be independently set, its feature
It is：Including first switch element, second switch element, the 3rd switch element, transformer, the first electric capacity, the second electric capacity and the 3rd
Electric capacity, the grid of first switch element, second switch element and the 3rd switch element is connected with microprocessor；First electric capacity
First end connect respectively input anode VIN and the 3rd switch element drain electrode, the first electric capacity the second end ground connection；Described
The source electrode of three switch elements connects the drain electrode of first switch element, and the source electrode of first switch element connects second switch element respectively
Drain electrode and transformer first siding ring first end, the source ground of second switch element；The transformer first siding ring
The second end connect the second electric capacity first end and first group of output VOUT, the second electric capacity the second end ground connection；The transformer
The first end of second siding ring connects the positive pole of diode, the negative pole of diode connect the 3rd electric capacity first end and second group it is defeated
Go out VOUT1, the second end of transformer secondary lateral coil connects the second end of the 3rd electric capacity and is grounded；In second electric capacity
AD samplings, the output end connection microprocessor of AD samplings are connected between two ends.
Further, the first switch element, second switch element and the 3rd switch element are managed using mosfet.
The IGBT driving power supplies topology that regulation can independently be set of the present invention can at any time be adjusted according to the demand of application
Control the size of supply voltage.And pass through feedback, and the sampling of IGBT driving power supplies magnitude of voltage can be read into host computer, work as electricity
When abnormal conditions occur in source or IGBT, the turn-off capacity to IGBT is improved.Meanwhile, the practicality of the transformer in the topology, suppression
The EMI of system, the conversion efficiency of the power supply of raising, while the series-parallel modular driving that can meet IGBT is required.
Brief description of the drawings
Fig. 1 is the schematic diagram of the IGBT driving power supplies topology that can independently set regulation of the present invention.
Fig. 2 is transformer working principle schematic diagram.
Fig. 3-1 is the working state schematic representation that Circuit Fault on Secondary Transformer and primary side cut off.
Fig. 3-2 is the working state schematic representation that transformer primary side and secondary side flow simultaneously.
Fig. 4 is the working waveform figure of each several part.
Specific embodiment
With reference to specific accompanying drawing, the invention will be further described.
As shown in figure 1, the IGBT driving power supplies topology that can independently set regulation of the present invention includes first switch element
Q1, second switch element Q2, the 3rd switch element Q4, transformer T1, the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3 and
Microprocessor 1, first switch element Q1, second switch element Q2 and the 3rd switch element Q4 can be managed using mosfet, and first
The grid of switch element Q1, second switch element Q2 and the 3rd switch element Q4 is connected with microprocessor 1, is controlled by microprocessor 1
First switch element Q1 processed, the break-make of second switch element Q2 and the 3rd switch element Q4.The first end of the first electric capacity C1
The drain electrode of the anode VIN and the 3rd switch element Q4 of input, the second end ground connection of the first electric capacity C2 are connected respectively；Described 3rd opens
The drain electrode of the source electrode connection first switch element Q1 of element Q4 is closed, the source electrode of first switch element Q1 connects second switch unit respectively
The drain electrode of part Q2 and the first end of transformer T1 first siding rings, the source ground of second switch element Q2；The transformer T1
Second end of first siding ring connects the first end and first group of second termination of output VOUT, the second electric capacity C2 of the second electric capacity C2
Ground；The positive pole of the first end connection diode D1 of the transformer T1 second siding rings, the electricity of negative pole connection the 3rd of diode D1
Hold the first end and second group of output VOUT1 of C3, the second end of transformer T1 second siding rings connects the second of the 3rd electric capacity C3
Hold and be grounded.Second group of output VOUT1 and first group of output voltage of output VOUT receive the second siding rings of transformer T1 mono-
Ratio is controlled, and second group exports VOUT1 and give IGBT driving power supplies, when different driving voltages are needed, by microprocessor 1 pair
The break-make Duty ratio control of first switch element Q1, second switch element Q2.When the break-make of load power source can be by
Three switch element Q4 control its input power supply, first group of sampling feedback of output VOUT, it is ensured that the precision of out-put supply, while
Also ensuring that secondary side power supply breaks down can allow the microprocessor 1 to carry out power cutoff input.Therefore, in the second electric capacity C2
Two ends between connect AD sample 2, AD sampling 2 output end connection microprocessor 1.
The transformer provides energy and isolation for driving power supply, by the different choice to transformer, device, Ke Yiman
In different capacity, different voltage class are exported foot, while can also meet the degree of regulation of voltage feedback.Mosfet devices of the invention
Part（Q1、Q2）The buck circuits constituted with transformer T1 sides, are extended by the scheme of synchronous rectification, it is ensured that transmission when effect
Rate.
Operation principle of the invention is：As shown in Fig. 2 primary side operation principle is similar with reduction voltage circuit, but secondary side
Output voltage is limited by side voltage.Wherein buck circuits use the principle of synchronous rectification, and upper down tube mosfet is turned in turn.
Such as Fig. 3, TONPeriod, commutation diode is in reverse-bias state, therefore secondary side cuts off with primary side.Primary side
Work it is similar with voltage-releasing voltage stabilizer；Transformer primary side current linear rise.Primary side output voltage is Vpri=D×Vin。
TOFFPeriod, diode is in forward bias and conducting state, and electric current can simultaneously flow in primary side and secondary side；But transformation
The waveform of magnetizing current is still triangular waveform in device, equal to the combination of primary side and secondary side winding electric current, im=ipri+N×
isec；
Meanwhile, primary side output will clamp down on secondary side output voltage, VSEC=N×VPRI。
As shown in figure 4, being the work wave of correspondence each several part.
According to ring current ripple derivation formula：Δim=（VPRI/LPRI）×（1-D）/FSW；Wherein：LPRI=primary side electricity
Sense, D=Ton/（Ton+Toff）, FSW=switching frequency.
Primary side peak point current is calculated：im（peak）=im+½Δim=iopri+（N×iosec）+½Δim, wherein：iopri=average
Primary side output current, iosec=average secondary side output current.
Transformer turn ratio：NPRI / NSEC = V1/V2。
The present invention can control the driving voltage of IGBT, and energy detection voltage, it is ensured that the stability of driving power supply, it is to avoid IGBT
Damage caused by power issue, while forming closed-loop control in electric power loop.
When IGBT breaks down or the failure of IGBT drivers, failure closing can be carried out by power supply, it is to avoid
The secondary destruction of the system caused by IGBT failures or IGBT driver malfunctions.
Claims (2)
1. a kind of IGBT driving power supplies that can independently set regulation are topological, it is characterized in that：Including first switch element（Q1）, second
Switch element（Q2）, the 3rd switch element（Q4）, transformer（T1）, the first electric capacity（C1）, the second electric capacity（C2）With the 3rd electric capacity
（C3）, first switch element（Q1）, second switch element（Q2）With the 3rd switch element（Q4）Grid and microprocessor（1）Even
Connect；First electric capacity（C1）First end connect the anode VIN and the 3rd switch element of input respectively（Q4）Drain electrode, first
Electric capacity（C2）The second end ground connection；3rd switch element（Q4）Source electrode connection first switch element（Q1）Drain electrode,
One switch element（Q1）Source electrode connect second switch element respectively（Q2）Drain electrode and transformer（T1）The of first siding ring
One end, second switch element（Q2）Source ground；The transformer（T1）Second end of first siding ring connects the second electric capacity
（C2）First end and first group of output VOUT, the second electric capacity（C2）The second end ground connection；The transformer（T1）Secondary side line
The first end connection diode of circle（D1）Positive pole, diode（D1）Negative pole connect the 3rd electric capacity（C3）First end and second
Group output VOUT1, transformer（T1）Second end of second siding ring connects the 3rd electric capacity（C3）The second end and be grounded；Institute
State the second electric capacity（C2）Two ends between connect AD sampling（2）, AD samplings（2）Output end connection microprocessor（1）.
2. the IGBT driving power supplies topology of regulation can be independently set as claimed in claim 1, it is characterized in that：The first switch
Element（Q1）, second switch element（Q2）With the 3rd switch element（Q4）Managed using mosfet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611240233.4A CN106849649A (en) | 2016-12-29 | 2016-12-29 | The IGBT driving power supplies topology of regulation can be independently set |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611240233.4A CN106849649A (en) | 2016-12-29 | 2016-12-29 | The IGBT driving power supplies topology of regulation can be independently set |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106849649A true CN106849649A (en) | 2017-06-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611240233.4A Withdrawn CN106849649A (en) | 2016-12-29 | 2016-12-29 | The IGBT driving power supplies topology of regulation can be independently set |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102946198A (en) * | 2012-10-22 | 2013-02-27 | 奇瑞汽车股份有限公司 | Drive power supply circuit of IGBT (Insulated Gate Bipolar Translator) for automobile, forming method and electric drive system circuit thereof |
| CN204046407U (en) * | 2014-05-06 | 2014-12-24 | 西安西驰电能技术有限公司 | A kind of many level IGBT drive circuit |
| CN204696909U (en) * | 2015-06-17 | 2015-10-07 | 华域汽车电动系统有限公司 | A kind of IGBT module driving power |
| CN105915063A (en) * | 2016-05-18 | 2016-08-31 | 南京理工大学 | Synchronous step-down topological circuit with isolated output |
-
2016
- 2016-12-29 CN CN201611240233.4A patent/CN106849649A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102946198A (en) * | 2012-10-22 | 2013-02-27 | 奇瑞汽车股份有限公司 | Drive power supply circuit of IGBT (Insulated Gate Bipolar Translator) for automobile, forming method and electric drive system circuit thereof |
| CN204046407U (en) * | 2014-05-06 | 2014-12-24 | 西安西驰电能技术有限公司 | A kind of many level IGBT drive circuit |
| CN204696909U (en) * | 2015-06-17 | 2015-10-07 | 华域汽车电动系统有限公司 | A kind of IGBT module driving power |
| CN105915063A (en) * | 2016-05-18 | 2016-08-31 | 南京理工大学 | Synchronous step-down topological circuit with isolated output |
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Application publication date: 20170613 |