CN2779623Y

CN2779623Y - Refrigeration chip structure for facilitating installation of curved surface

Info

Publication number: CN2779623Y
Application number: CN200520050265.9U
Authority: CN
Inventors: 林昌亮
Original assignee: Individual
Current assignee: Individual
Priority date: 2005-02-04
Filing date: 2005-02-04
Publication date: 2006-05-10
Anticipated expiration: 2015-02-04

Abstract

The utility model discloses a refrigeration chip structure which can be easily provided with a curved cambered surface. The utility model comprises a first heat conducting and current conducting base plate, a second heat conducting and current conducting base plate, an insulating layer, a circuit layer, a plurality of P-type semiconductor crystal grains and N-type semiconductor crystal grains. Besides good electric conductivity and thermal conductivity, the heat conducting and current conducting base plates have good plastic working deformability. Suitable curved cambered surfaces can be made according to product requirements in shapes; then, the insulating layer is coated between the two base plates for the arrangement of the surfaces of the P-type / N-type semiconductor crystal grains. The utility model can improve the inconvenience that a traditional ceramic base plate is easily cracked and limited and can be used only on a flat surface product, and the utility model can also provide a refrigeration chip which can be simply processed, has low cost and can be processed in a cambered surface mode.

Description

Be easy to establish the cooling chip structure of tool curved surface

Technical field:

The utility model relates to a kind of cooling chip structure that is easy to establish the tool curved surface.

Background technology:

Cooling chip is a kind of combination that cooperates associated component, after making the cooling chip conduction, produce on its chip and have the significantly cold interface and the hot interface of the temperature difference, wherein little because of cooling chip power consumption, the effect of refrigeration is quick and obvious, does not more need the bulky condenser system of construction, and cost is extremely low, thereby be widely used in the electronic installation or other cold-storage and thermal storage device of general need quench cooled function, respectively as heat radiation and heating apparatus.

Existing cooling chip substrate is made for the material sintering with the alumina ceramic, but again with conducting metal copper, is soldered to predetermined circuit and forms circuit layer on the substrate, finishes the preparation of substrate; Though only have ceramic material to possess the characteristic of good insulation performance intensity and high-heat conductive efficency at present, and can be applied to making the unique selection of cooling chip substrate, but because the ductility of ceramic material is extremely low, except when cost, processing, the assembling, easily have embrittlement and not anti-collision disappearance and influence outside the finished product yield, and ceramic material is not good because of the characteristic of being processed into bending arc shape, therefore, can only be confined to the application of complanation heat exchange occasion at present, and make range of application significantly dwindle, necessity of being improved should be arranged.

The utility model content:

Technical problem to be solved in the utility model is: at the deficiencies in the prior art, provide a kind of structure that is easy to establish the cooling chip of tool curved surface.

In order to solve the problems of the technologies described above, the technical scheme that the utility model adopted is: a kind of cooling chip structure that is easy to establish the tool curved surface, comprise: one according to the bent arc demand on product device surface plastic working establish first and second substrate shape and that make by good heat conducting material, and insulating barrier, circuit layer and most P type semiconductor crystal grain and the N type semiconductor crystal grain of equipment between two substrates; Insulating barrier be located at first, second substrate relatively on inner face, circuit layer is arranged on two insulating barriers according to circuit laying demand, P type and N type semiconductor crystal grain row place between two circuit layers, to form electrical connection.

Described substrate is that metal material is made.Described insulating barrier is for being formed at the lip-deep exhausted electricity isolated layer of arranging P/N N-type semiconductor N crystal grain with the substrate kenel.On described at least one outer surface of substrate there be with the heat radiation of lifting cooling chip or the auxiliary heat-conducting piece of heating effect additional or one-body molded ground fixture.On described at least one outer surface of substrate there be with the heat radiation of lifting cooling chip or the auxiliary heat-conducting piece of heating effect additional or one-body molded ground fixture.Described N type or P type semiconductor crystal grain are to hand over corresponding separately pattern arranged between conductive layer.Described N type or P type semiconductor crystal grain are to hand over corresponding separately pattern arranged between conductive layer.Described N type or P type semiconductor crystal grain are to hand over corresponding separately pattern arranged between conductive layer.Described N type or P type semiconductor crystal grain are to hand over corresponding separately pattern arranged between conductive layer.

Compared with prior art, the utility model has the advantages that: this heat-conductivity conducting substrate is except that having electricity and hot very leading the characteristic, have more good plastic processing deformation ability, can be according to the demand on the product kenel, make suitable curved surface, be coated on the surface that makes P/N N-type semiconductor N crystal grain between the two substrates in order to layout with insulating barrier again, decapacitation improves outside easy embrittlement of traditional ceramics substrate and the limited inconvenience that only can use on planar products, more can provide processing more simple and easy, but the more cheap cambered surface cooling chip of cost.

Description of drawings:

Fig. 1 is an example structure schematic perspective view of the cooling chip of tool curved surface of the present utility model.

Fig. 2 is the decomposing state schematic perspective view of Fig. 1.

Fig. 3 is the structure side view of Fig. 1.

Fig. 4 is the structure side view of another embodiment of the present utility model.

Fig. 5 is the stereogram that the utility model is connected with product.

The figure number explanation:

5..... product

10.... cooling chip

11.... substrate

113... curved surface

114... heat-conducting piece

12.... substrate

21.... insulating barrier

22.... insulating barrier

31.... circuit layer

32.... circuit layer

41....P N-type semiconductor N crystal grain

42....N N-type semiconductor N crystal grain

50.... on-plane surface

Embodiment:

As for detailed construction of the present utility model, application principle, effect and effect, then please refer to the explanation that following adjoint does can be understood completely:

See also Fig. 1 and Fig. 2, as can be known, the cooling chip structure of tool curved surface of the present utility model is to number 10 expressions; The material such as the metal that comprise and tool good heat-conductivity conducting splendid by the plasticity processing characteristics, made substrate 11 and substrate 12, and two substrates (11,12) relatively on face, be coated with

insulating barrier

21 and 22 respectively, and respectively on these insulating barriers (21,22), arrange default circuit layer (31,32), as shown in Figure 3.P type semiconductor crystal grain 41 that these are most and N type semiconductor crystal grain 42 are then being formed according to handing over the pattern laying of Electricity Federation separately to be incorporated between two circuit layers (31,32).

To have electrical and thermal conductivity and plastic processing deformation ability splendid material such as metal, as two substrates (11,12).The surface that attaches the product 5 of combination when institute's desire is an on-plane surface 50, and in the time of as shown in Figure 5, this two substrates (11,12) can be prefabricated into the style of the curvature that is fit to this on-plane surface 50 of attaching according to the article demand; And respectively at two substrates (11,12) relatively between on the inner layer surface, each quilt is coated with insulating barrier (21,22), allow these insulating barriers (21,22) with two substrates (11,12) kenel of inner layer surface forms an electric insulation separator, make two substrates (11,12) internally can't produce electric action, then again with a scheduled circuit aspect respectively at insulating barrier (21,22) lay circuit layer (31 on the relative inner face, 32), make P type and N type semiconductor crystal grain (41 again, 42) arrange the kenel of putting separately to hand over, layout is incorporated into two circuit layers (31,32) between, and form that electrically to be connected in be at two substrates (11,12) the P/N N-type semiconductor N between and each circuit layer (31,32) between, promptly form a complete loops.

When applying electric current, see also Fig. 3, because of two substrates (11,12) has high thermal conduction characteristic, make and when contacting, can produce high efficiency heat exchange with appended subsides product 5, and under effective insulating effect of insulating barrier (21,22), make each P type or N type semiconductor crystal grain (41,42) all can produce the reaction of relative refrigeration and pyrogenicity, produce cold and hot temperature difference between the two substrates (11,12) and make according to the scheduled current direction, allow cooling chip 10 can be effectively and apace subsidiary products dispel the heat or heat.

Fig. 4 has disclosed another feasible embodiment of the present utility model, the outer surface of the substrate 11 that plasticity is splendid, install additional or the auxiliary heat-conducting piece 114 of the different kenels of direct one-body molded preparation, make substrate 11 surfaces increase area of dissipation, the effect of dispelling the heat or heating with lifting because of auxiliary heat-conducting piece 114; As shown in Figure 5, because the material of two substrates (11,12) has high plasticity, therefore when product 5 is the moulding of an on-plane surface 50, but cooling chip 10 utmost points are simply according to the demand of the heat exchange contact face on the product 5, make suitable curved surface 113, make in addition fit applications of state that cooling chip 10 can fully meet this on-plane surface 50, this just can improve the disappearance that traditional making cambered surface is difficult for, but expands its scope of application more.

Claims

1, a kind of cooling chip structure that is easy to establish the tool curved surface, it is characterized in that: this structure comprises: one according to the bent arc demand on product device surface plastic working establish first and second substrate shape and that make by good heat conducting material, and insulating barrier, circuit layer and most P type semiconductor crystal grain and the N type semiconductor crystal grain of equipment between two substrates; Insulating barrier be located at first, second substrate relatively on inner face, circuit layer is arranged on two insulating barriers according to circuit laying demand, P type and N type semiconductor crystal grain row place between two circuit layers, to form electrical connection.

2, the cooling chip structure that is easy to establish the tool curved surface as claimed in claim 1, it is characterized in that: described substrate is that metal material is made.

3, the cooling chip structure that is easy to establish the tool curved surface as claimed in claim 1 or 2 is characterized in that: described insulating barrier is for being formed at the lip-deep exhausted electricity isolated layer of arranging P/N N-type semiconductor N crystal grain with the substrate kenel.

4, the cooling chip structure that is easy to establish the tool curved surface as claimed in claim 1 or 2 is characterized in that: on described at least one outer surface of substrate there be with the heat radiation of lifting cooling chip or the auxiliary heat-conducting piece of heating effect additional or one-body molded ground fixture.

5, the cooling chip structure that is easy to establish the tool curved surface as claimed in claim 3 is characterized in that: on described at least one outer surface of substrate there be with the heat radiation of lifting cooling chip or the auxiliary heat-conducting piece of heating effect additional or one-body molded ground fixture.

6, the cooling chip structure that is easy to establish the tool curved surface as claimed in claim 1 or 2 is characterized in that: described N type or P type semiconductor crystal grain are to hand over corresponding separately pattern arranged between conductive layer.

7, the cooling chip structure that is easy to establish the tool curved surface as claimed in claim 3 is characterized in that: described N type or P type semiconductor crystal grain are to hand over corresponding separately pattern arranged between conductive layer.

8, the cooling chip structure that is easy to establish the tool curved surface as claimed in claim 4 is characterized in that: described N type or P type semiconductor crystal grain are to hand over corresponding separately pattern arranged between conductive layer.

9, the cooling chip structure that is easy to establish the tool curved surface as claimed in claim 5 is characterized in that: described N type or P type semiconductor crystal grain are to hand over corresponding separately pattern arranged between conductive layer.