CN2588504Y - Miniature low-voltage low-resistance current detector - Google Patents

Miniature low-voltage low-resistance current detector Download PDF

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Publication number
CN2588504Y
CN2588504Y CN 02257350 CN02257350U CN2588504Y CN 2588504 Y CN2588504 Y CN 2588504Y CN 02257350 CN02257350 CN 02257350 CN 02257350 U CN02257350 U CN 02257350U CN 2588504 Y CN2588504 Y CN 2588504Y
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CN
China
Prior art keywords
current sensor
resistance current
low voltage
miniature
layer
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Expired - Lifetime
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CN 02257350
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Chinese (zh)
Inventor
王钟雄
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Cyntec Co Ltd
Qiankun Science and Technology Co Ltd
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Cyntec Co Ltd
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Abstract

The utility model discloses a miniature low-voltage low-resistance current detector, which comprises a detector body and electrodes arranged on both ends of the detector. The utility model is characterized in that the detector body is composed of a middle base layer, heat dissipation films arranged on the upper and the lower sides of the middle base layer, a resistive layer arranged above the upper heat dissipation film, a base plate formed by compressed heat dissipation layers on the surface of the lower heat dissipation film, and protective layers coating on the surface of the resistive layer and the surfaces of the heat dissipation layers.

Description

Miniature low voltage and low resistance current sensor
Technical field
The utility model relates to a kind of neotectonics of current sensor, is meant a kind of neotectonics of miniature low voltage and low resistance current sensor especially.
Background technology
As everyone knows, the most normal server (Server) that is used in of current sensor, the medium control IC of control circuit of the protective circuit of the power supply unit of desktop computer, charger (charger), wherein, be applied to power supply unit and motor control circuit, be as a protective circuit and come Control current and its effect, for example, when being applied to power supply unit, may command is filled or discharging current and steady load; When being applied to motor, then rotation rate-controllable please be joined Fig. 1, this figure is a typical protective circuit, symbol Re is current sensor, in this circuit diagram, if when load current is low, electric current flows in direction 1, and be increased to certain level and electric crystal Tr2 when energising, electric current are promptly flowed along direction 2 when load current, and make electric crystal Tr1 open circuit, by this, load (load) can be protected; And because of the required current ratio of above-mentioned electronics or power equipment is bigger, according to P=I 2R, so used resistance just need be smaller, otherwise the heat that is produced is just very big.In addition, in metal-oxide-semiconductor (MOS) (MOS) wafer that the central processing unit (CPU) of computer is controlled with electric current, often because of the consideration of power saving, in design all based on low-voltage, so the electric current that is produced is all than higher, for the resistance in the head it off current sensor, in the consideration in design, just need with lower resistance, to reduce the generation of heat.
The current sensor of commonly seeing is important have following several: A. metal forming type current sensor (Metal Foil Current detector)
Its structure is shown in Fig. 2 A; walk by metal terminal 201,202; be located in alloy sheets 203 therebetween; and the resin protection film 204 that is coated on the alloy sheets 203 constitutes; the thickness of this kind metal forming type current sensor can be done very thickly, so its resistance (resistant value) can be done very lowly.According to formula R=Rsl/w, Rs=sheet resistor Ω/2, l=resistor length, w=resistor width, when thickness was thicker, its Rs value was just lower, so can obtain lower resistance.
This kind metal forming type current sensor has following shortcoming:
1. metal all has its flexibility, and when need be than higher resistance, the thickness of sheet metal will be thinner, and sheet metal is thin more, and its operability is just poor more, and the qualification rate of manufacturing is also just low more, so its resistance scope of application can only be between 1-10m Ω.
2, metal is thin more, need thicker resin to support, but resin is thicker, and its heat conduction is just poor, so can only limit the product of use in low pressure.
3. the resistance finishing can only be used mechanical method for trimming, and its accuracy is relatively poor.B. plug-in type current sensor
It constitutes shown in Fig. 2 B, include substrate 211, metal forming 212 formed thereon, and the terminal body lead 213,214 that joins with metal forming 212, its terminal body lead 213,214 forms latch, so that peg graft with circuit board, the manufacture method of this kind plug-in type current sensor is at present, utilize the mode of rotary coating that epoxy resin is coated on the substrate, again metal forming is bonded at above the substrate after the pressing, utilizes lithography process, sheet metal is etched into required circuit, and then utilize etching mode and laser reconditioning mode to repair resistance, so its accuracy height.
But this kind plug-in type current sensor has following shortcoming:
1. because the characteristics of plug-in type current sensor are to be used for being plugged on the circuit board, so the connection that needs some to make the terminal body lead extra man-hour in the consideration of manufacturing cost, is poor.
2. because of the needs terminal wire, and the terminal body lead can have a resistance, and it will limit the product that its product can't be used in low microhm.
3. do not have SMD (surface is pasted) structure, the client need can increase processing cost with manually coming plug-in unit in use.
4. do not have cooling mechanism, can only be limited on the lower powered product.C. film low-drag type current sensor
Shown in Fig. 2 C; the making of film low-drag type current sensor is to utilize the technology of evaporation or sputter that the alloy of metal or metal is plated on the substrate of aluminium oxide on the substrate 221 of aluminium oxide; as resistive layer 222; utilize the dressing technique of laser again; film is trimmed to exact value; form electrode 223 with sputter or evaporation coating technique then, diaphragm 224 again is covered.Because resistive layer 222 utilizes laser reconditioning, so accuracy is higher.
But this kind film low-drag type current sensor also has following shortcoming:
1. film resistor, lower than additive method aspect the growth speed of resistive film because of the characteristic on making is to adopt vacuum technology, general can with resistance range just can only be limited in product more than 10 microhms.
2. because growth speed is slow, manufacturing cost also can be than higher.
3. aspect heat radiation, because of there not being the diffusing mechanism of heat, so can only be limited in the product of low pressure.D. thick-film type current sensor
Shown in Fig. 2 D, the resistive layer 232 of thick film current sensor, its making is to utilize the mode of printing, sintering to make, thus be relatively to have competitiveness on manufacturing cost, however the thick-film type current sensor also has following shortcoming:
1. because the resistive paste of thick-film technique is to make bond by the oxide and the glass of metal or metal, and metal or metal oxide itself there is no joint capacity, so its resistance value will be done very lowly, is not easy really, the scope of application of its product is more than 10 microhms.
2., because of the characteristic of the glass bond of material own, behind laser reconditioning, relatively be easy to generate fine fisssure (Micro crack), so can only limit the product of use in low-voltage though the thick-film type current sensor can be adjusted its resistance with the mode of laser reconditioning.
3. aspect heat radiation and low-resistance mechanism, there is not this design, so can only be limited in the product of low-voltage yet.E. high temperature co-firing pottery magnetic (MLCC) and low temperature co-fired pottery magnetic are made the current sensor of formula
The similar a bit thick-film type current sensor of the technology of this kind current sensor, unique different be the mode of taking high temperature (more than 850 ℃) co-sintering, with ceramics material 242 and resistive layer 241 co-sintered, form electrode 243,244 again, because employed material difference,, but make sintering with base material because of resistive element so its pluses and minuses and thick-film technique are similar, so can't repair resistance, be the poorest in all products in the accuracy of resistance with laser.
Because the current sensor of commonly seeing has above-mentioned shortcoming, the utility model designer is at the road of those shortcoming research improvement, and research has the utility model to produce eventually when long.
Summary of the invention
Therefore, the utility model promptly aims to provide a kind of miniature low voltage and low resistance current sensor, according to this kind miniature low voltage and low resistance current sensor of the present utility model, it has unique electrode design, utilize micro electronmechanical galvanoplastics (electric casting), with the electrode thickening, to reduce the resistance that electrode was brought.
According to this kind miniature low voltage and low resistance current sensor of the present utility model, it can comply with employed power, designs difform cooling mechanism in substrate back, utilize galvanoplastics again, cooling mechanism is increased, increased radiating effect, this is an of the present utility model purpose.
According to this kind miniature low voltage and low resistance current sensor of the present utility model, the use of its substrate has very big elasticity, can decide which kind of substrate of use according to the different power that use, and this is a purpose more of the present utility model.
According to this kind miniature low voltage and low resistance current sensor of the present utility model, the design that it has laser reconditioning makes its resistance can be more accurate, and this is a purpose of the present utility model.
According to this kind miniature low voltage and low resistance current sensor of the present utility model, it has SMD (surface adhering) design, and more convenient in the use, this is an another purpose of the present utility model.
According to this kind miniature low voltage and low resistance current sensor of the present utility model, its resistance can be complied with different demands, and the sheet material of use different-thickness meets different clients' demand, on producing very big elasticity is arranged, and this is a more purpose of the present utility model.
According to miniature low voltage and low resistance current sensor of the present utility model, it can use the process for pressing of printed circuit board (PCB) to make, and can produce in a large number, reduces production costs, and this is an another purpose in addition of the present utility model.
For achieving the above object, basic scheme of the present utility model is: a kind of miniature low voltage and low resistance current sensor, the electrode that it has sensor body and is located at the sensor body two ends; It is characterized in that: sensor body is to be made of following institute: basic unit in the middle of; the heat radiation film of the upper and lower side of basic unit in the middle of being located at; be positioned at the resistive layer on the upper strata heat radiation film; be positioned at the substrate that lower floor's lip-deep heat dissipating layer of heat radiation film is pressed into, and the protective layer that is coated on resistive layer surface with the heat dissipating layer surface of substrate.
As for detailed construction of the present utility model, application principle, effect and effect, then the explanation of doing with reference to following adjoint can be understood completely.
Description of drawings
Fig. 1: be an example of current sensor application circuit.
Fig. 2 A: be the schematic diagram of the metal forming type current sensor of commonly seeing.
Fig. 2 B: be the schematic diagram of the plug-in type current sensor of commonly seeing.
Fig. 2 C: be the schematic diagram of the film low-drag type current sensor of commonly seeing.
Fig. 2 D: be the schematic diagram of the thick-film type current sensor of commonly seeing.
Fig. 2 E: be the schematic diagram of the low temperature co-fired pottery magnetic of high technology formula current sensor.
Fig. 3: the schematic perspective view of the utility model current sensor.
Embodiment
Fig. 1~Fig. 2 E is depicted as the current sensor of commonly seeing, and its structure, manufacturing and excellent, shortcoming have described in detail as above, herein repeated description no longer.
As shown in Figure 3, this kind current sensor of the present utility model, constituted by sensor body 1 and the electrode 2 of being located at the sensor body two ends, wherein, sensor body 1 includes the multilayer plate body, the most central plate body is middle basic unit 10, middle basic unit 10 is preferably constituted with the oxide of aluminium or the nitride or the metal plate of aluminium, the upper and lower side of middle basic unit 10 is heat radiation film 11,12, be positioned at the heat radiation film 11 of upside, its surface is gone up and is attached resistive layer 13, is positioned on heat radiation film 12 surfaces of downside, then attaches heat dissipating layer 14; The material of heat radiation film 11,12 is FRP glue or high pass hot glue; what heat dissipating layer 14 was preferable is copper; 13 of resistive layers are tinsel; on the resistive layer 13 of tinsel, the part that can be covered/or whole protective layer 15, on the surface of heat dissipating layer 14; a protective layer 16 then is covered; this protective layer can change according to the demand of different capacity, can be all or local lining, and protective layer 15,16 preferable be the resin material formation.
The electrode part 2 of sensor body two side ends forms a copper electroforming 17,18 earlier, utilizes sputtering method to form three electrodes 20, electro-coppering thereon again, nickel, tin lead at last again.
Above-mentioned current sensor of the present utility model, its substrate back has cooling mechanism, radiating effect can increase, it utilizes the result of micro electronmechanical galvanoplastics with the electrode thickening, can reduce the resistance that brings from electrode, its sensor body constitutes with five plate bodys, utilizes the process for pressing of PC plate to obtain, not only can produce in a large number, more can reduce production costs.
From the above as can be known, this kind miniature low voltage and low resistance current sensor of the present utility model has the minimizing electrode resistance really, increases the effect of heat sinking function, and that these effects can be improved the electrode resistance of commonly seeing really is bigger, the disadvantage of poor heat radiation and, it is not seen in public use.
What need Chen Ming is, the above is the preferable specific embodiment of the utility model, if the change of doing according to conception of the present utility model, and the function of its generation, when not exceeding spiritual that specification and diagram contained yet, all should be in scope of the present utility model.

Claims (6)

1. miniature low voltage and low resistance current sensor, the electrode that it has sensor body and is located at the sensor body two ends; It is characterized in that: sensor body is to be made of following institute: basic unit in the middle of; the heat radiation film of the upper and lower side of basic unit in the middle of being located at; be positioned at the resistive layer on the upper strata heat radiation film; be positioned at the substrate that lower floor's lip-deep heat dissipating layer of heat radiation film is pressed into, and the protective layer that is coated on resistive layer surface with the heat dissipating layer surface of substrate.
2. miniature low voltage and low resistance current sensor as claimed in claim 1, it is characterized in that: the electrode part of sensor body two side ends is formed with a copper electroforming at electrode tip, has three electrodes that utilize sputtering method to form on it, and barrel plating has copper, nickel, tin lead layer on it.
3. miniature low voltage and low resistance current sensor as claimed in claim 1 is characterized in that: the middle basic unit of substrate is with aluminum oxide base material (Al 2O 3) or aluminium nitride base material (AlN) or metal plate form.
4. miniature low voltage and low resistance current sensor as claimed in claim 1 is characterized in that: the thermal paste sheet material of the upper and lower side of middle basic unit of substrate is FRP glue or high pass hot glue.
5. miniature low voltage and low resistance current sensor as claimed in claim 1 is characterized in that: resistive layer is a tinsel.
6. miniature low voltage and low resistance current sensor as claimed in claim 1 is characterized in that: whole or local lining layer protective layer on the resistive layer.
CN 02257350 2002-09-18 2002-09-18 Miniature low-voltage low-resistance current detector Expired - Lifetime CN2588504Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 02257350 CN2588504Y (en) 2002-09-18 2002-09-18 Miniature low-voltage low-resistance current detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 02257350 CN2588504Y (en) 2002-09-18 2002-09-18 Miniature low-voltage low-resistance current detector

Publications (1)

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CN2588504Y true CN2588504Y (en) 2003-11-26

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Country Status (1)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10438730B2 (en) 2017-10-31 2019-10-08 Cyntec Co., Ltd. Current sensing resistor and fabrication method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10438730B2 (en) 2017-10-31 2019-10-08 Cyntec Co., Ltd. Current sensing resistor and fabrication method thereof
TWI704583B (en) * 2017-10-31 2020-09-11 乾坤科技股份有限公司 Current sensing resistor and fabrication method thereof

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C14 Grant of patent or utility model
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C17 Cessation of patent right
CX01 Expiry of patent term

Expiration termination date: 20120918

Granted publication date: 20031126