CN1265400C - Method for mfg of miniature low voltage and low resistance current sensor - Google Patents
Method for mfg of miniature low voltage and low resistance current sensor Download PDFInfo
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- CN1265400C CN1265400C CN 02130724 CN02130724A CN1265400C CN 1265400 C CN1265400 C CN 1265400C CN 02130724 CN02130724 CN 02130724 CN 02130724 A CN02130724 A CN 02130724A CN 1265400 C CN1265400 C CN 1265400C
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Abstract
The present invention discloses a manufacturing method of a miniature low-voltage low-resistance current detector. The current detector obtained by the manufacturing method is provided with a detector body and electrodes arranged on both ends of the detector body. The manufacturing method comprises: firstly, a base plate of the detector body is formed by pressing an intermediate base layer, heat radiation rubber sheets arranged on the upper side and the lower side of the intermediate base layer, a resistor layer positioned on the heat radiation rubber sheets on the upper layer, and a heat radiation layer on the surface of the heat radiation rubber sheet on the lower layer; secondly, the upper surface and the lower surface of the base plate are coated with dry film light blocking layers; thirdly, the dry film light blocking layers are exposed and displayed to form patterns, and the dry film light blocking layers are etched to form the electrode layer and the resistor layer; fourthly, the light blocking layers are removed, copper is electroformed on the electrode layer to thicken the electrode layer for reducing the resistance of the electrodes and heightening a heat radiation mechanism; fifthly, the resistor layer is coated with a protective layer through laser trimming, and the obtained plate is cut into bars for plating a side electrode in a spattering mode; finally, the bars are cut into grains, and the gains are plated with metal by barrel plating to form the current detector.
Description
Technical field
The present invention relates to a kind of manufacture method of current sensor, be meant a kind of manufacture method of miniature low voltage and low resistance current sensor especially.
Background technology
As everyone knows, the most normal server (Server) that is used in of current sensor, the medium control IC of control circuit of the protective circuit of the power supply unit of desktop computer, charger (charger), wherein, be applied to power supply unit and motor control circuit, be as a protective circuit and come Control current and its effect, for example, when being applied to power supply unit, may command is filled or discharging current and steady load; When being applied to motor, then rotation rate-controllable please be joined Fig. 1, this figure is a typical protective circuit, symbol Re is current sensor, in this circuit diagram, if when load current is low, electric current flows in direction 1, and be increased to certain level and make electric crystal Tr2 when energising when load current, electric current promptly/flow along direction 2, and make electric crystal Tr1 open circuit, by this, load (load) can be protected; And because of the required current ratio of above-mentioned electronics or power equipment is bigger, according to P=I
2R, so used resistance just need be smaller, otherwise the heat that is produced is just very big.In addition, in metal-oxide-semiconductor (MOS) (MOS) chip that the central processing unit (CPU) of computer is controlled with electric current, often because of the consideration of power saving, in design all based on low-voltage, so the electric current that is produced is all than higher, for the resistance in the head it off current sensor, in the consideration in design, just need with lower resistance, to reduce the generation of heat.
The current sensor of commonly seeing is important have following several:
A. metal forming type current sensor (Metal Foil Current detector)
Its structure is shown in Fig. 2 A; be by metal terminal 201,202; be located in alloy sheets 203 therebetween; and the resin protection film 204 that is coated on the alloy sheets 203 constitutes; be that kind of the thickness of metal forming type current sensor can be done very thickly, so its resistance (resistant value) can be done very lowly.According to formula R=Rsl/w, Rs=sheet resistor Ω/2, l=resistor length, w=resistor width, when thickness was thicker, its Rs value was just lower, so can obtain lower resistance.
This kind metal forming type current sensor has following shortcoming:
1, metal all has its flexibility, and when need be than higher resistance, the thickness of sheet metal will be thinner, and sheet metal is thin more, and its operability is just poor more, and the qualification rate of manufacturing is also just low more, so its resistance scope of application can only be between 1～10m Ω.
2, metal is thin more, need thicker resin to support, but resin is thicker, and its heat conduction is just poor, so can only limit the product of use in low pressure.
3, the resistance finishing can only be used mechanical method for trimming, and its accuracy is relatively poor.
B. plug-in type current sensor
It constitutes shown in Fig. 2 B, include substrate 211, metal forming 212 formed thereon, and the terminal body lead 213 that joins with metal forming 212,214, its terminal body lead 213,214 form latch, so that peg graft with circuit board, the manufacture method of this kind plug-in type current sensor is at present, utilize the mode of rotary coating that epoxy resin is coated on the substrate, metal forming is sticked on substrate again and after the pressing, utilize little developing process, sheet metal is etched into required circuit, and then utilize etching mode and laser reconditioning mode to repair resistance, so, its accuracy height.
But this kind plug-in type current sensor has following shortcoming:
1. because the characteristics of plug-in type current sensor are to be used for being plugged on the circuit board, so the connection that needs some to make the terminal body lead extra man-hour in the consideration of manufacturing cost, is poor.
2. because of the needs terminal wire, and the terminal body lead can have a resistance, and it will limit the product that its product can't be used in low microhm.
3. do not have SMD (surface is pasted) structure, the client need can increase processing cost with manually coming plug-in unit in use.
4. do not have cooling mechanism, can only be limited on the lower powered product.
C. film low-drag type current sensor
Shown in Fig. 2 C; the making of film low-drag type current sensor is; the technology of utilizing evaporation formula sputter on the substrate 221 of aluminium oxide is plated in the alloy of metal or metal on the substrate of aluminium oxide; as resistive layer 222; utilize the dressing technique of laser again, film is trimmed to exact value, then; form electrode 223, and lining diaphragm 224.Because resistive layer 222 utilizes laser reconditioning, so accuracy is higher.
But this kind film low-drag type current sensor also has following shortcoming:
1. film resistor, lower than additive method aspect the growth speed of film because of the characteristic on making is to adopt vacuum technology, general can with resistance range just can only be limited in product more than 10 microhms.
2. because growth speed is slow, manufacturing cost also can be than higher.
3. aspect heat radiation, because of there not being the diffusing mechanism of heat, so can only be limited in the product of low pressure.
D. thick-film type current sensor
Shown in Fig. 2 D, the resistive layer 232 of thick film current sensor, its making is to utilize the mode of printing, sintering to make, thus be relatively to have competitiveness on manufacturing cost, however the thick-film type current sensor also has following shortcoming:
1. because the resistive paste of thick-film technique is to make bond by metal and glass, and metal itself there is no joint capacity, so its resistance value will be done very lowly, is not easy really, the scope of application of its product is more than 10 microhms.
2., because of the characteristic of the glass bond of material own, behind laser reconditioning, relatively be easy to generate fine fisssure (Micro crack), so can only limit the product of use in low-voltage though the thick-film type current sensor can be adjusted its resistance with the mode of laser reconditioning.
Aspect heat radiation with low-resistance mechanism aspect, do not have yet this design, so can only be limited in the product of low-voltage.
E. high temperature co-firing pottery magnetic (MLCC) and low temperature co-fired pottery magnetic technology formula current sensor
The similar a bit thick-film type current sensor of the technology of this kind current sensor, unique different be the mode of taking high temperature (more than 850 ℃) co-sintering, with ceramics material 242 and resistive layer 241 co-sintered, form electrode 243,244 again, because employed material difference,, but make sintering with base material because of resistive element so its pluses and minuses and thick-film technique are similar, so can't repair resistance, be the poorest in all products in the accuracy of resistance with laser.
Because the current sensor of commonly seeing has above-mentioned shortcoming, the inventor is at the road of those shortcoming research improvement, and research has generation of the present invention eventually when long.
Summary of the invention
Therefore, the present invention promptly aims to provide a kind of manufacture method of miniature low voltage and low resistance current sensor, manufacture method according to this kind miniature low voltage and low resistance current sensor of the present invention, it is that substrate with uniqueness is as sensor body, and unique electrode design is arranged, utilize micro electronmechanical galvanoplastics (electric casting), with the electrode thickening, to reduce the resistance that electrode was brought.
According to the manufacture method of this kind miniature low voltage and low resistance current sensor of the present invention, it can comply with employed merit, designs difform cooling mechanism in substrate back, utilize galvanoplastics again, cooling mechanism is increased, increased radiating effect, this is an of the present invention purpose.
According to the manufacture method of this kind miniature low voltage and low resistance current sensor of the present invention, the use of its substrate has very big elasticity, can decide which kind of substrate of use according to the different power that use, and this is a further object of the present invention.
According to this kind miniature low voltage and low resistance current sensor of the present invention, the design that it has laser reconditioning makes its resistance can be more accurate, and this is a purpose of the present invention.
According to the manufacture method of this kind miniature low voltage and low resistance current sensor of the present invention, the current sensor of its manufacturing has SMD (surface adhering) design, and more convenient in the use, this is an another purpose of the present invention.
Manufacture method according to this kind miniature low voltage and low resistance current sensor of the present invention, the current sensor of its manufacturing, resistance can be complied with different demands, and the sheet material of use different-thickness meets different clients' demand, on producing very big elasticity is arranged, this is a further object of the present invention.
According to the manufacture method of miniature low voltage and low resistance current sensor of the present invention, it can use the process for pressing of printed circuit board (PCB) to make the substrate of sensor body, can produce in a large number, reduces production costs, and this is an another purpose in addition of the present invention.
For achieving the above object, the technical solution used in the present invention is as follows: a kind of manufacture method of miniature low voltage and low resistance current sensor comprises the following steps:
Be pressed into to making the substrate of sensor body with the multilayer plate body; The most central plate body of described substrate is basic unit in the middle of being constituted with the nitride of the oxide of aluminium or aluminium or metal plate, the upper and lower side of middle basic unit is the heat radiation film, be positioned on the surface of heat radiation film of upside and attach resistive layer, be positioned on the heat radiation film surface of downside, then attach heat dissipating layer; Before etching, its electrode layer is identical with the resistive layer position;
After the substrate of sensor body obtained, one deck dry film photoresistance was covered respectively on the two sides thereon, down; To described dry film photoresistance exposure, development and form pattern;
Resistive layer and the electrode layer that forms pattern carried out etching, removes resistive layer and electrode layer not, and form electrode, resistance and cooling mechanism: wherein electrode is positioned at the both sides of resistance;
On electrode, lining copper and form the thickening layer of electrode, and the thickening layer of cooling mechanism;
With laser reconditioning resistance; , as protective layer resistance is covered with resin;
The plate body of above-mentioned steps gained is cut into strip; Form respectively and the contacted side electrode of end electrode;
Be cut into the strip shape body of the rapid gained of previous step granular; And with the coccoid barrel plating.
As for detailed methods of fabrication of the present invention, application principle, effect and effect, then the explanation of doing with reference to following adjoint can be understood completely.
Description of drawings
Fig. 1: be an example of current sensor application circuit;
Fig. 2 A: be the schematic diagram of the metal forming type current sensor of commonly seeing;
Fig. 2 B: be the schematic diagram of the plug-in type current sensor of commonly seeing;
Fig. 2 C: be the schematic diagram of the film low-drag type current sensor of commonly seeing:
Fig. 2 D: be the schematic diagram of the thick-film type current sensor of commonly seeing;
Fig. 2 E: be the schematic diagram of the low temperature co-fired pottery magnetic of high technology formula current sensor;
Fig. 3: the schematic perspective view of manufacture method manufacturing current sensor of the present invention;
Fig. 4 A～Fig. 4 E: be manufacture method part steps schematic perspective view of the present invention;
Fig. 5 A～Fig. 5 K: be manufacturing step key diagram of the present invention.
Embodiment
Fig. 1～Fig. 2 E is depicted as the prepared current sensor of manufacture method of the current sensor of commonly seeing, and its structure, manufacturing and excellent, shortcoming have described in detail as above, herein repeated description no longer.
As shown in Figure 3, this kind current sensor of the present invention, constituted by sensor body 1 and the electrode 2 of being located at the sensor body two ends, wherein, sensor body 1 includes the substrate that constitutes with the multilayer plate body, the most central plate body is middle basic unit 10, middle basic unit 10 is preferably constituted with the oxide of aluminium or the nitride or the metal plate of aluminium, the upper and lower side of middle basic unit 10 is heat radiation film 11,12, be positioned at the heat radiation film 11 of upside, its surface is gone up and is attached resistive layer 13, is positioned on heat radiation film 12 surfaces of downside, then attaches heat dissipating layer 14; The material of heat radiation film 11,12 is FRP glue or high pass hot glue; what heat dissipating layer 14 was preferable is copper; 13 of resistive layers are tinsel; on the resistive layer 13 of tinsel, the part that can be covered/or whole protective layer 15, on the surface of heat dissipating layer 14; a protective layer 16 then all is covered; what protective layer 15,16 was preferable is that resin material constitutes, and this protective layer can change according to the demand of different capacity, can be all or local the lining.
On the electrode part 2 of sensor body two side ends, a copper electroforming 17,18 is arranged, utilize sputtering method to form three electrodes 20 barrel plating copper, nickel, tin or lead layer thereon more at last again.
Please join Fig. 4 A～Fig. 4 E and Fig. 5 A～Fig. 5 K, the manufacture method of miniature low voltage and low resistance current sensor of the present invention at first is pressed into to making the substrate of sensor body with the multilayer plate body, wherein, the most central plate body is middle basic unit 10, it is preferably constituted with the oxide of aluminium or the nitride or the metal plate of aluminium, the upper and lower side of middle basic unit 10 is heat radiation film 11,12, the low-grade fever film 11 of basic unit's 10 upsides in the middle of being positioned at, its surface is gone up and is attached resistive layer 13, be positioned at heat radiation film 12 surfaces of downside, then attach heat dissipating layer 14; The material of heat radiation film 11,12 can be FRP glue or high pass hot glue, and what heat dissipating layer 14 was preferable is copper, and 13 of resistive layers are tinsel (as Fig. 4 A and Fig. 5 A).
Before etching, its electrode layer is identical with the resistive layer position; After the substrate 1 of sensor body utilizes pressing to obtain, earlier thereon, one deck dry film photoresistance 21 is covered respectively on the following two sides, 22 (as Fig. 5 B), again to this layer dry film photoresistance exposure, develop, form pattern (pattern) 31,32 (as Fig. 5 C), secondly, respectively with etching, remove part resistive layer (shown in Fig. 5 D) and form resistance 132,134 ... and electrode 131,133 ... and cooling mechanism 141,142 ... again in electrode 131,133 ... on, with micro electronmechanical galvanoplastics (electric casting) copper electroforming, form electrode 131,133 ... thickening layer 171,172 ..., and cooling mechanism 141,142 ... thickening layer 161,162,163 ... (shown in Fig. 5 E); Then, with laser reconditioning resistance 132,134 ... (shown in Fig. 4 B and Fig. 5 F); Again with resin as protective layer 181,182 ... with resistance 132,134 ... lining; Then, be cut into strip (shown in Fig. 4 C and Fig. 5 F); Further, form respectively and paired end electrode 171,172 with sputtering method ... contacted side electrode 201,202 ... (shown in Fig. 5 I), during the sputter side electrode, preferable with Ti or Cr or NiCr or TiW as adhesion layer, and with Cu or Ni or NiCu alloy as conductive layer; After side electrode forms, be cut into granular (shown in Fig. 4 D and Fig. 5 J), last barrel plating Cu, Ni, SnPb promptly get miniature low voltage and low resistance current sensor of the present invention (shown in Fig. 5 K).
The current sensor of above-mentioned manufacture method gained of the present invention, its substrate back has cooling mechanism, the design of radiating effect can design the different shaped shape according to different capacity and utilize micro electronmechanical galvanoplastics that electrode is thickeied the result that different thickness obtains with it, can reduce the resistance that brings from electrode, its sensor body constitutes with five plate bodys, utilize the process for pressing of PC plate to obtain, not only can produce in a large number, more can reduce production costs.
From the above as can be known, the current sensor of this kind miniature low voltage and low resistance current sensor manufacture method of the present invention manufacturing has the minimizing electrode resistance really, increase the effect of heat sinking function, and that these effects can be improved the electrode resistance of commonly seeing really is bigger, the fraud of poor heat radiation.And it is not seen in public use.
What need Chen Ming is, the above is the preferable specific embodiment of the present invention, if the change of doing according to conception of the present invention, and the function of its generation, when not exceeding spiritual that specification and diagram contained yet, all should be within the scope of the invention.
Claims (6)
1, a kind of manufacture method of miniature low voltage and low resistance current sensor is characterized in that, comprises the following steps:
Be pressed into to making the substrate of sensor body with the multilayer plate body; The most central plate body of described substrate is basic unit in the middle of being constituted with the nitride of the oxide of aluminium or aluminium or metal plate, the upper and lower side of middle basic unit is the heat radiation film, be positioned on the surface of heat radiation film of upside and attach resistive layer, be positioned on the heat radiation film surface of downside, then attach heat dissipating layer; Before etching, its electrode layer is identical with the resistive layer position; After the substrate of sensor body obtained, one deck dry film photoresistance was covered respectively on the two sides thereon, down;
To described dry film photoresistance exposure, development and form pattern;
Resistive layer and the electrode layer that forms pattern carried out etching, removes resistive layer and electrode layer not, and form electrode, resistance and cooling mechanism: wherein electrode is positioned at the both sides of resistance;
On electrode, lining copper and form the thickening layer of electrode, and the thickening layer of cooling mechanism;
With laser reconditioning resistance;
, as protective layer resistance is covered with resin;
The plate body of above-mentioned steps gained is cut into strip;
Form respectively and the contacted side electrode of end electrode;
Be cut into the strip shape body of the rapid gained of previous step granular; And with the coccoid barrel plating.
2. the manufacture method of miniature low voltage and low resistance current sensor as claimed in claim 1, it is characterized in that: the material of described heat dissipating layer is a copper, resistive layer then is a tinsel.
3. the manufacture method of miniature low voltage and low resistance current sensor as claimed in claim 2 is characterized in that: the material of heat radiation film is a heat transfer glue.
4. the manufacture method of miniature low voltage and low resistance current sensor as claimed in claim 1, it is characterized in that: the thickening layer of electrode and the thickening layer of cooling mechanism form with micro electronmechanical galvanoplastics copper electroforming.
5. the manufacture method of miniature low voltage and low resistance current sensor as claimed in claim 1 is characterized in that: during the sputter side electrode, with Ti or Cr or NiCr or TiW as adhesion layer, and with Cu or Ni or NiCu alloy as conductive layer.
6. the manufacture method of miniature low voltage and low resistance current sensor as claimed in claim 1, it is characterized in that: coccoid is with Cu, Ni, SnPb barrel plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02130724 CN1265400C (en) | 2002-09-18 | 2002-09-18 | Method for mfg of miniature low voltage and low resistance current sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02130724 CN1265400C (en) | 2002-09-18 | 2002-09-18 | Method for mfg of miniature low voltage and low resistance current sensor |
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| CN1484256A CN1484256A (en) | 2004-03-24 |
| CN1265400C true CN1265400C (en) | 2006-07-19 |
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| CN 02130724 Expired - Fee Related CN1265400C (en) | 2002-09-18 | 2002-09-18 | Method for mfg of miniature low voltage and low resistance current sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10438730B2 (en) | 2017-10-31 | 2019-10-08 | Cyntec Co., Ltd. | Current sensing resistor and fabrication method thereof |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102354590B (en) * | 2011-09-15 | 2013-03-27 | 南京萨特科技发展有限公司 | Precision current sensing element and manufacturing method thereof |
| WO2017110079A1 (en) * | 2015-12-22 | 2017-06-29 | パナソニックＩｐマネジメント株式会社 | Resistor |
| CN110286258A (en) * | 2019-08-10 | 2019-09-27 | 蚌埠市正园电子科技有限公司 | A kind of potentiometric detection equipment current divider |
| WO2022205641A1 (en) * | 2021-03-29 | 2022-10-06 | 南京萨特科技发展有限公司 | Method for preparing high-power resistor and resistor prepared by said method |
| CN116110669A (en) * | 2023-03-07 | 2023-05-12 | 国巨电子（中国）有限公司 | Novel high-voltage-resistant thick film resistor manufacturing method |
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2002
- 2002-09-18 CN CN 02130724 patent/CN1265400C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10438730B2 (en) | 2017-10-31 | 2019-10-08 | Cyntec Co., Ltd. | Current sensing resistor and fabrication method thereof |
| TWI704583B (en) * | 2017-10-31 | 2020-09-11 | 乾坤科技股份有限公司 | Current sensing resistor and fabrication method thereof |
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| Publication number | Publication date |
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| CN1484256A (en) | 2004-03-24 |
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