CN2523027Y - Improved packaging structure of power light-emitting diode - Google Patents
Improved packaging structure of power light-emitting diode Download PDFInfo
- Publication number
- CN2523027Y CN2523027Y CN01278462U CN01278462U CN2523027Y CN 2523027 Y CN2523027 Y CN 2523027Y CN 01278462 U CN01278462 U CN 01278462U CN 01278462 U CN01278462 U CN 01278462U CN 2523027 Y CN2523027 Y CN 2523027Y
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- light
- black glue
- glue shell
- encapsulating structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
The utility model relates to a 'power typed light-emitting diode improved packaging structure' which improves the packaging structure of the existing power typed light-emitting diode, black glue is adopted as an exterior frame which has the advantage of excellent bonding force with the metal bracket, and high reliability can be obtained, furthermore, the design of the inner circle reflection material leads the high brightness produced by an LED under high current to obtain more effective output, and as the metal bracket of the LED element has adopted heat dissipation design, the complication and upsizing of the design module due to a heat dissipation problem in the application of the mechanism is reduced.
Description
Technical field
The utility model provides a kind of encapsulating structure of light-emitting diode improvement, is meant a kind of encapsulating structure of power type light-emitting diode improvement especially.
Background technology
Recent light-emitting diode (Light Emitting Diode, LED) application is developed gradually, along with development of technology, and the lifting gradually of LED brightness, popularizing of environmental consciousness, the characteristics of LED illumination (as: power saving, safety, long-life, pollution-free etc.) are much accounted of increasingly.Having had gradually with the white light LEDs on the lighting source market now is the product appearance of core parts, and white light LEDs can be described as the light source of Construction Technologies in Twenty-one Century.
The principle of luminosity of LED is not like incandescent lamp, and it is the energy jump with the electronics energy band, emits photon and penetrates visible light, so common name is a cold light again.Though call it " cold light ", still can generate heat after passing to electric current, the resistive place because all electric currents are flowed through has the energy of part to be consumed with the form of heat.Thus, electric current can send light by LED also can produce heat, but is accompanied by heat and the negative effect of coming is that LED brightness meeting is suppressed, and also can change the optical wavelength of sending.
With continuous current 20 milliamperes (mA) is benchmark, most now LED is applied in to be lower than this substandard situation, the influence that heat history caused and be negligible for (for example) uses the above LED of continuous current 100 milliamperes (mA).
Because by electricity one hot formula: H=I
2Rt, wherein H is an energy, and I is an electric current, and R is interior resistance, and t is conduction time, then same conduction time, with under the interior resistance, passes to the comparison of heat energy of the generation of 100mA and 10mA:
H
(100mA)＝(100)
2Rt
H
(10mA)＝(10)
2Rt
H
(100mA)/ H
(10mA)=100, just both have differed 100 times!
In order to improve the influence that heat is caused, some dealer selects the packaged type of power-type wafer in order to improve the influence of heat, as depicted in figs. 1 and 2.This kind packaged type has following advantage:
1. utilize the semiconductor industry to develop very successful ready-made metallic support and be the basis, do not make an amendment or do a little change, can reduce development cost and time-histories.This is that metallic support has comprised heat dissipation design, can solve the problem of heat.Existing data show the LED that ends the L structure under the continuous current that surpasses 100mA drives, and LED still can stable operation under the high heat of its generation, and life of product is also in estimating scope.The about 006W/cm of the thermal diffusivity of potting resin ℃, the about 4W/cm of the thermal diffusivity of metallic support ℃, the thermal diffusivity of conspicuous metallic support is far above potting resin, and most heat will be gone out cutter from the fin conductive of metallic support
2. (Epoxy MoldingCompound, EMC) as the material that forms shell (Housing), reliability (Reliability) performance is good with the black encapsulation resin to adopt integrated circuit (IC).
But this kind packaged type also has shortcoming, such as not only can be not reflective with black glue shell, also can extinction, and the high brightness that LED sends under the high current drives can not all penetrate, and is unfortunate very.For improving the shortcoming of black glue shell extinction, some dealer uses white potting resin to do shell.Though this measure can improve brightness, has sacrificed reliability, especially under long-term high-temperature operation, (heat radiation and and the sticking outstanding property of metallic support) is stable with black EMC not as IC on the white potting resin reliability.
The utility model content
The purpose of this utility model is to provide a kind of " power type light-emitting diode improvement encapsulating structure " its advantage in conjunction with IC usefulness black EMC and white potting resin, even add reflexed light ring or add lens, can improve LED brightness output is good with black EMC more only, can not influence reliability again.
A kind of power type light-emitting diode improvement of the utility model encapsulating structure, comprise: the metallic support of carrying luminescent wafer has heat radiation and fixing hole device; Form the black glue shell of product housing and bond support, have the pedestal of recessed cup; White resin is formed at the inwall that black glue shell institute garden goes out, and is used for as reflective material; Luminescent wafer passes to the light that can send certain wavelength behind the electric current; It is characterized in that, comprise that black glue shell clad metal support forms the pedestal with recessed cup; One profile and recessed glass of black glue shell identical white resin, this white resin place in the recessed cup of black glue shell, and a wafer is fixed on the metallic support, and this wafer is connected with electrode by the nail line, pours into transparent resin on wafer.
Wherein coat the glued membrane of tool fluorescent substance at luminescent wafer.
Wherein the outgoing plane at light adds lens.
A kind of power type light-emitting diode improvement of the utility model encapsulating structure comprises: metallic support in order to the carrying luminescent wafer, has heat radiation and fixing hole device simultaneously; Black glue shell forms and produces, and the material of product housing and bond support is for having the pedestal of recessed cup; Reflexed light ring is placed in the inwall that black glue shell is crossed, and is used for as reflective material; Luminescent wafer passes to the light that can send certain wavelength behind the electric current; It is characterized in that, should form the pedestal with recessed cup by black glue shell clad metal support, a reflexed light ring is placed in recessed cup inwall and constitutes a complex, and reflexed light ring is put into the recessed cup of black glue shell, one luminescent wafer is fixed on the metallic support, and this luminescent wafer is connected with electrode by nail line and some glue.
Wherein reflexed light ring is a metal material electroplating surface reflector layer.
Wherein reflexed light ring is heat-resisting plastic cement.
Wherein on luminescent wafer, coat the glued membrane of tool fluorescent substance.
One lens are wherein arranged on the outgoing plane of light.
The utility model " power type light-emitting diode improvement encapsulating structure " this kind packaged type has following advantage:
1. as long as mould is done a few modifications, just can make compound structure, mould development is with low cost.
2. reservation heat dissipation design is to solve heat to the harmful effect on luminous.
3. have integrated circuit (IC) black encapsulation resin (Epoxy MoldingCompound, the reflecting effect of high-reliability EMC) (Reliability) and white resin concurrently.
4. use doing circlewise of smooth reflective material, more can increase the brightness of LED.
5. can alleviate use on the module for heat radiation consider cause in the design burden.
Description of drawings
Cooperate relevant drawings and embodiment to do an explanation below the content of the present utility model for further specifying, wherein:
Fig. 1 is the stereogram that tradition is used power type light-emitting diode;
Fig. 2 is the profile that tradition is used power type light-emitting diode;
Fig. 3 is the three-dimensional internal anatomy of the utility model " power type light-emitting diode improvement encapsulating structure ";
Fig. 4 is the profile of the utility model " power type light-emitting diode improvement encapsulating structure ", Fig. 3;
Fig. 5 is the assembling stereogram that the utility model inwall adopts reflexed light ring;
Fig. 6 is the profile that the utility model inwall adopts reflexed light ring;
Fig. 7 is that the utility model inwall uses reflexed light ring, and with viscose glue it is fixed in the profile of black glue shell;
Fig. 8 is to use and covers crystal type (Flip Chip) cooperation inwall white resin reflector layer profile;
Fig. 9 is that the utility model is used the profile that contains the fluorescent substance glued membrane;
Figure 10 is that the utility model another way is used the profile that contains the fluorescent substance glued membrane;
Figure 11 is the utility model adds lens more thereon after finishing composite construction a profile.
Embodiment
See also Fig. 3, Figure 4 shows that embodiment of the present utility model, wherein 11,12,13 is conductive electrode, and wherein not effect of electrode can be answered user's requirement to cut off or kept.Metallic support 1 in the drawings is the extension of conductive electrode 11, and 13 is effective conductive electrode, and conductive electrode 12 is no active electrode, all is design like this but do not represent each metallic support, and this figure is the example explanation.This is to form black glue shell 4 earlier, white resin is formed at the inwall 5 of shell again.White resin 5 can be reflective, can improve the ejaculation effect of light, reaches the purpose that increases brightness.
See also and Figure 5 shows that embodiment of the present utility model, this is that reflexed light ring 6 is inserted in the space of black glue shell 4 reservations.Reflexed light ring 6 inwalls become smooth reflecting surface through surface treatment, can be easily the light of luminescent wafer 3 be cast out, and reflexed light ring 6 processing earlier in addition, the a large amount of manufacturing, reduce cost, also can significantly simplify on the whole power type light-emitting diode encapsulation procedure, so as long as a mold is used for the black glue shell 4 of moulding, simple more processing procedure can avoid more because variation slightly just to product generation tremendous influence.
See also shown in Figure 6; after reflexed light ring 6 is inserted in black glue shell 4; have some gaps between reflexed light ring 6 and the black glue shell 4; when adding that transparent resin 41 is with protection luminescent wafer 3 and relevant conductor wire 2; liquid transparent resin 41 will infiltrate through in the gap, treat behind the hardening of resin reflexed light ring 6 just and black glue shell 4 bind.
See also shown in Figure 7ly, thermal expansion amounts different between the unlike material are after expanding with heat and contract with cold for a long time, and its interface might be destroyed by thermal stress, cause and peel off (Delamination), along with the intrusion of aqueous vapor etc., the destruction aspect can continue to enlarge, and causes LED component failure at last.For overcoming the difference of thermal expansion between the unlike material, utilize soft viscose 44 to come gluing reflexed light ring 6 and black glue shell 4 herein, the distortion that the stress that both swell increment difference of black glue shell 4 and reflexed light ring 6 is caused after being heated can see through viscose 44 cushions, and on reliability better guarantees can be arranged.
See also shown in Figure 8, progress along with encapsulation technology, the LED wafer not necessarily will link to each other with conductive electrode by nail line (Wire Bonding) gradually, person shown here fixes and follows closely the line operation through covering crystal type (Flip Chip) replacement wafer, and finishes the embodiment of encapsulation in conjunction with composite construction of the present utility model.Cover crystal type (Flip Chip) thus overall merit be that the bank of need not dodging can encapsulate very thinly, equipment investment cost is low, LED brightness height, again because the electrode on the LED luminescent wafer is directly to be connected with metallic support, do not see through conductor wire and elargol, so fine heat radiation property, reliability is good, and it is the trend of following encapsulation that Flip Chip can say so.Emphasize " power-type " herein, nature will be considered the heat problem of being derived, and the ingenious combination of the metallic support of the thermal diffusivity that Flip Chip is good and reflective design of the present utility model and tool heat dissipation design can allow the luminous efficacy upper floor more of LED.
See also Fig. 9 and shown in Figure 10, the glued membrane 42 that the utility model utilization contains fluorescent substance places luminescent wafer 3 tops, and the light that sends specific wavelength through luminescent wafer 3 excites the fluorescent thing, can change the color and the colour temperature of light.See through the collocation of the fluorescent thing of the wafer send different wavelengths of light and different response wave lengths, can obtain versicolor light.Especially fluorescent thing and luminescent wafer are separated among this embodiment, can increase brightness, the high temperature in the time of also can reducing element and pass to current practice directly is heated the fluorescent thing and allows color conversion usefulness go down.
Shown in Figure 11, this embodiment is for the directive property that increases brightness again and improve light, lens 45 of affix again at the ejaculation position of light, and these lens 45 can be with glutinous or allow lens card on black glue shell 4 with the mode of pushing.
The utility model " power type light-emitting diode improvement divinatory symbol assembling structure " is the recessed cup of the tool pedestal that forms high-reliability in conjunction with black glue in sum, strengthen the reflection function of recessed cup again with white glues or reflexed light ring, use the transparent resin encapsulated moulding at last, the LED for illumination that this " power type light-emitting diode improvement encapsulating structure " has high-cooling property, high brightness, high-reliability is novel and practical creation really.
Claims (8)
1. a power type light-emitting diode improvement encapsulating structure comprises: carry the metallic support of luminescent wafer, have heat radiation and fixing hole device; Form the black glue shell of product housing and bond support, have the pedestal of recessed cup; White resin is formed at the inwall that black glue shell institute garden goes out, and is used for as reflective material; Luminescent wafer passes to the light that can send certain wavelength behind the electric current;
It is characterized in that, comprise that black glue shell clad metal support forms the pedestal with recessed cup; One profile and recessed glass of black glue shell identical white resin, this white resin place in the recessed cup of black glue shell, and a wafer is fixed on the metallic support, and this wafer is connected with electrode by the nail line, pours into transparent resin on wafer.
2. power type light-emitting diode improvement encapsulating structure as claimed in claim 1 is characterized in that, wherein coats the glued membrane of tool fluorescent substance at luminescent wafer.
3. power type light-emitting diode improvement encapsulating structure as claimed in claim 1 is characterized in that wherein the outgoing plane at light adds lens.
4. a power type light-emitting diode is improved encapsulating structure, comprises: metallic support in order to the carrying luminescent wafer, has heat radiation and fixing hole device simultaneously; Black glue shell forms and produces, and the material of product housing and bond support is for having the pedestal of recessed cup; Reflexed light ring is placed in the inwall that black glue shell is crossed, and is used for as reflective material; Luminescent wafer passes to the light that can send certain wavelength behind the electric current;
It is characterized in that, should form the pedestal with recessed cup by black glue shell clad metal support, a reflexed light ring is placed in recessed cup inwall and constitutes a complex, and reflexed light ring is put into the recessed cup of black glue shell, one luminescent wafer is fixed on the metallic support, and this luminescent wafer is connected with electrode by nail line and some glue.
5. power type light-emitting diode improvement encapsulating structure as claimed in claim 4 is characterized in that wherein reflexed light ring is a metal material electroplating surface reflector layer.
6. power type light-emitting diode improvement encapsulating structure as claimed in claim 4 is characterized in that wherein reflexed light ring is heat-resisting plastic cement.
7. power type light-emitting diode improvement encapsulating structure as claimed in claim 4 is characterized in that, wherein coats the glued membrane of tool fluorescent substance on luminescent wafer.
8. power type light-emitting diode improvement encapsulating structure as claimed in claim 4 is characterized in that lens are wherein arranged on the outgoing plane of light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01278462U CN2523027Y (en) | 2001-12-14 | 2001-12-14 | Improved packaging structure of power light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01278462U CN2523027Y (en) | 2001-12-14 | 2001-12-14 | Improved packaging structure of power light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2523027Y true CN2523027Y (en) | 2002-11-27 |
Family
ID=33681942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN01278462U Expired - Lifetime CN2523027Y (en) | 2001-12-14 | 2001-12-14 | Improved packaging structure of power light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2523027Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621052B (en) * | 2008-07-04 | 2011-01-26 | 一诠精密工业股份有限公司 | LED encapsulating array, structure and method |
| CN102110764A (en) * | 2010-12-17 | 2011-06-29 | 深圳雷曼光电科技股份有限公司 | LED (light emitting diode) and LED bracket |
| CN102208517B (en) * | 2002-12-06 | 2013-06-05 | 克立公司 | LED package die having a small footprint |
| CN104409606A (en) * | 2014-12-09 | 2015-03-11 | 苏州科利亚照明科技有限公司 | Light-emitting device |
-
2001
- 2001-12-14 CN CN01278462U patent/CN2523027Y/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208517B (en) * | 2002-12-06 | 2013-06-05 | 克立公司 | LED package die having a small footprint |
| CN101621052B (en) * | 2008-07-04 | 2011-01-26 | 一诠精密工业股份有限公司 | LED encapsulating array, structure and method |
| CN102110764A (en) * | 2010-12-17 | 2011-06-29 | 深圳雷曼光电科技股份有限公司 | LED (light emitting diode) and LED bracket |
| CN104409606A (en) * | 2014-12-09 | 2015-03-11 | 苏州科利亚照明科技有限公司 | Light-emitting device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20111214 Granted publication date: 20021127 |