CN2518092Y

CN2518092Y - Combined line silicon photodetector

Info

Publication number: CN2518092Y
Application number: CN 01277169
Authority: CN
Inventors: 江美玲; 梁平治; 丁爱娣; 张学敏; 陈世军
Original assignee: Shanghai Institute of Technical Physics of CAS
Current assignee: Shanghai Institute of Technical Physics of CAS
Priority date: 2001-12-29
Filing date: 2001-12-29
Publication date: 2002-10-23
Anticipated expiration: 2011-12-29

Abstract

The utility model relates to a combination type line array silicon light detector used for an image spectrometer. The detector comprises a line array chip, a bottom plate and a frame with windows. The line array chip is positioned at the middle of the bottom plate with electrode leader charts on the both sides, the frame with windows is arranged on the line array chip, and the frame is fixed on the bottom plate. The utility model uses the characteristic of different photosensitive elements test light with different wave length, to divide the line array chip into a plurality of sub-line array chips, each sub-line array chip enhances the responsivity of the detected wave range in the process, and then a plurality of sub-line array chips are spliced into a complete line array chip. Thereby, high test sensitivity can be obtained within the entire spectral range covered by the spectrometer. The detector adopts the process of the PIN photo diode, to ensure that the responsivity of the corresponding detected wave range through choosing SiO2 anti-reflection films of different thickness.

Description

Combined alignment silicon photo-detector

Technical field

The utility model relates to the silicon photo-detector, specifically is meant a kind of combined alignment silicon photo-detector that is used for imaging spectrometer.

Background technology

In modern spectrum measuring technology, usually applying silicon photo-detector linear array or CCD are as the sensitive detection parts of visible near-infrared wave band.When adopting detector array or CCD, through the rayed of chromatic dispersion on detector.The rayed of its different wave length is in the different photosensitive unit of detector array.Thereby each photosensitive unit of alignment is just corresponding to a different wavelength, and its output signal is proportional to the light intensity of respective wavelength.Like this, in spectrometer, no longer need rotatory dispersion element such as grating or prism just can read the signal of different wave length simultaneously.This has not only simplified the structure of spectrometer greatly, and can make the transient state spectrometer.

But usually the spectral response characteristic of silicon photo-detector is that the responsiveness of the near-infrared band of near 0.4 μ m royal purple optical band and 1.0 μ m all obviously descends, thereby test makes troubles to spectrometer.Particularly for the imaging spectrometer of surveying feeble signal, it requires at 0.4 μ m ~ whole wave band of 1.0 μ m higher responsiveness is arranged all, therefore existing people makes the silicon photo-detector linear array that shortwave strengthens, it has had significant raising in the responsiveness of royal purple optical band, but the responsiveness of its near-infrared band is all lower.The higher silicon photo-detector of near-infrared band responsiveness is also arranged, but the responsiveness of its royal purple optical band is very poor.In a word, also do not have a kind of in silicon photo-detector linear array that 0.4 μ m ~ the whole wave band responsivity of 1.0 μ m all is enhanced.

Summary of the invention

Based on the problem that above-mentioned prior art exists, the utility model adopts detector array is divided into several sub-alignments, and each sub-alignment responsiveness to its detecting band on technology strengthens, and then these several sub-alignments is spliced into a complete alignment.Like this, in the overall optical spectral limit that imaging spectrometer covers, can both obtain high measurement sensitivity.

A kind of combined alignment silicon photo-detector that is used for imaging spectrometer of the present utility model comprises: the framework of alignment chip, base plate and band window.Base plate is an epoxy plate, and the with good grounds alignment chip lead of its positive two limit cloth requires the contact conductor figure of arrangement, and the back side of base plate is equipped with the contact pin that passes base plate and connect with base plate front electrode lead-in wire end points electricity; Be equipped with the underlayer electrode piece with the strip of base plate strong bonded in the middle of the base plate front, many common lead among this electrode block and the contact conductor figure are joined; Be equipped with the alignment chip that different spectrum segments are strengthened on the strip underlayer electrode piece, the alignment chip is to be spliced by the sub-alignment chip that a plurality of different spectrum segments strengthen, the essential maintenance in a straight line when this a little alignment chip splices, and at grade; It is to connect by corresponding contact conductor on Si-Al wire and the base plate that the signal of the photosensitive unit of alignment is drawn; Be covered with the framework of band window on the alignment chip, framework is fixed on the base plate by epoxy glue, and window is made of the glass sheet of the logical light filter film of evaporation band.

Said sub-alignment chip is made up of high resistant N type silicon chip forms the P-N knot by mixing the photosensitive unit of alignment, again according to the SiO of different response wave band to the photosensitive unit of different sub-alignment chips heat growth different-thickness ₂Anti-reflection film.To being used to survey the sub-alignment chip of 460nm to the 620nm band signal, SiO ₂Anti-reflection film thickness is 60-80nm, can strengthen the responsiveness in the royal purple optical band; Survey the sub-alignment chip of 620nm, SiO to the 940nm band signal ₂Anti-reflection film thickness is 100-120nm; Survey the sub-alignment chip of 940nm, SiO to the 1100nm band signal ₂Anti-reflection film thickness is 190-210nm, can strengthen the responsiveness of near-infrared band.

The advantage of this structure is: can improve yield rate 1.; 2 can be according to the different-waveband scope of using, and antithetical phrase alignment chip carries out the enhancing of spectral response respectively.The result of development proves that this unitized construction is very effective, thereby has formed the maximum characteristics of this device: the high responsiveness that has promptly satisfied all wave bands on an alignment.

Description of drawings

Fig. 1. be the cross-sectional view of device;

Fig. 2. be the vertical view of device;

Fig. 3. be the SiO of different-thickness ₂The spectral response curve figure of the photosensitive unit of the sub-alignment of anti-reflection film, curve 501 is the spectral response curve of sub-alignment chip 501; Curve 502 is the spectral response curve of sub-alignment chip 502; Curve 503 is the spectral response curve of sub-alignment chip 503.

Embodiment

Present embodiment is to implement according to a kind of requirement that is used for airborne imaging spectrometer.Device has 4 sub-alignments, and each sub-alignment is 16 yuan, is combined into 64 yuan of alignment silicon photo-detectors, is characterized in that photosensitive elemental area is big, and shortwave and long wave strengthen, and the spectral range of use is wide, and response speed is fast and dark current is little.

The base plate 1 of detector requires printed electrode lead-in wire Fig. 2 on base plate for covering the copper epoxy plate according to the alignment chip lead, and in its surface gold-plating; The back side of base plate is equipped with the contact pin 3 that passes base plate and connect with base plate front electrode lead-in wire end points electricity, and contact spacing is 2.54mm, can insert the socket of standard; Be equipped with the underlayer electrode piece 4 with the strip of base plate strong bonded in the middle of the base plate front, eight common lead among this electrode block and the contact conductor figure are joined; The N pole-face of 4 sub-alignment chips sticks on the strip underlayer electrode piece with conductive silver glue, and it is kept in a straight line, and photosensitive unit keeps at grade; The signal of the photosensitive unit 5 of alignment is drawn and is adopted ultrasonic welding process by Si-Al wire the corresponding contact conductor on photosensitive first P utmost point and the base plate to be connect, be covered with the framework 7 of band window 6 on the alignment chip, framework is fixed on the base plate by epoxy glue, in the photosensitive first top window 6 of 1-20 is full impregnated glass, and the photosensitive first top window of 21-64 is that evaporation has the preceding light cutoff filter film of 0.7 μ m.

It is the N type silicon materials of 1000 Ω cm that 4 sub-alignment chips all adopt resistivity, and PN junction is 0.2 μ m deeply, and the centre distance between the photosensitive unit is 0.8mm, and the length overall of 64 yuan of photosensitive units is 51.2mm.

Because the detecting band difference of each sub-alignment correspondence, thus in each photosensitive unit of sub-alignment the SiO of the hot different-thickness of growing ₂Anti-reflection film.Sub-alignment chip 501 is a 1-16 unit, is used to survey the signal of 460nm to the 620nm wave band, adopts the thick SiO of 70nm ₂Anti-reflection film can strengthen the responsiveness in the royal purple optical band; Sub-alignment chip 502 is two in 17-32 unit and a 33-48 unit, the thick SiO of employing 120nm ₂Anti-reflection film is used to survey the signal of 620nm to the 940nm wave band; Sub-alignment chip 503 is a 49-64 unit, adopts the thick SiO of 200nm ₂Anti-reflection film can make 940nm be enhanced to the responsiveness of 1100nm wave band, and the spectral response curve of this three seeds alignment chip as shown in Figure 2.See that from figure each chip is at the wave band of its use, responsiveness all is the highest.

Claims

1. combined alignment silicon photo-detector, comprise: the framework (7) of base plate (1), alignment chip (5) and band window (6), base plate is the contact conductor figure (2) that the requirement of the with good grounds alignment chip lead of its positive two limit cloth of epoxy plate is arranged, and the back side of base plate is equipped with the contact pin (3) that passes base plate and connect with base plate front electrode lead-in wire end points electricity; Be equipped with the underlayer electrode piece (4) with the strip of base plate strong bonded in the middle of the base plate front, many common lead among this electrode block and the contact conductor figure are joined; Be equipped with alignment chip (5) on the strip underlayer electrode piece, it is to connect by corresponding contact conductor on Si-Al wire and the base plate that the signal of the photosensitive unit of alignment chip is drawn; Be covered with the framework (7) of band window (6) on the alignment chip, framework is fixed on the base plate by epoxy glue, it is characterized in that:

A. said alignment chip (5) is to be spliced by a plurality of sub-alignment chip that different spectrum segments are strengthened, and sub-alignment chip is made up of N type silicon chip forms the P-N knot by mixing the photosensitive unit of alignment;

B. said window (6) is a full impregnated glass above the photosensitive unit of 1-20, and there is the preceding light cutoff filter film of 0.7 μ m the photosensitive unit of 21-64 top for evaporation.

2. according to claim 1 combined alignment silicon photo-detector, it is characterized in that: the said a plurality of sub-alignment chip that different spectrum segments are strengthened is that basis is to being used to survey the sub-alignment chip of 460nm to the 620nm band signal, SiO ₂Anti-reflection film thickness is 60-80nm; Survey the sub-alignment chip of 620nm, SiO to the 940nm band signal ₂Anti-reflection film thickness is 100-120nm; Survey the sub-alignment chip of 940nm, SiO to the 1100nm band signal ₂Anti-reflection film thickness is 190-210nm.