CN205246212U - Integrated spectrum subassembly of infrared multichannel of shortwave - Google Patents
Integrated spectrum subassembly of infrared multichannel of shortwave Download PDFInfo
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- CN205246212U CN205246212U CN201520978955.4U CN201520978955U CN205246212U CN 205246212 U CN205246212 U CN 205246212U CN 201520978955 U CN201520978955 U CN 201520978955U CN 205246212 U CN205246212 U CN 205246212U
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- alignment
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Abstract
The utility model discloses an integrated spectrum subassembly of infrared multichannel of shortwave, it includes: the photosensitive chip of high length -width ratio inGaAs alignment, playback circuit, transition electrode board, temperature measuring resistor, semiconductor refrigerator, the digital spectrometer of multichannel, window, metal tube and apron. The digital spectrometer of multichannel welds the snap -on through the edge metallization and on the photosensitive chip of high length -width ratio inGaAs alignment, integrates inside the detector subassembly as the branch optical element of miniature spectrum appearance. This patent advantage is: the photosensitive unit of the photosensitive chip of inGaAs alignment is high length -width ratio structure, can improve the SNR of spectrum test, the meticulous regulation and control of spectrum can be realized to the digital spectrometer of multichannel on single substrate to restrain crosstalk between the interior spectrum noise of each passageway, passageway, the outer stray light of passageway, realize a plurality of spectrum passageways at the detector subassembly and survey the structure of having simplified miniature spectrum appearance, improve the reliability and the stability of instrument, alleviate the weight of instrument.
Description
Technical field
A kind of InGaAs detector assembly of this patent, is specifically related to a kind of inside that is applied to micro spectrometerBe integrated with the InGaAs detector assembly of multi-channel digital optical splitter.
Background technology
Micro spectrometer has a wide range of applications demand in fields such as agricultural, food, industry, is on-the-spot qualityFast inspection and the online desirable instrument detecting, have fast, high flux, harmless, pollution-free, high accuracy, lowCost and the advantage such as easy to operate. Short-wave infrared InGaAs detector has non-at 0.9 μ m～1.7 mu m wavebandThe advantages such as refrigeration working and room temperature, detectivity is high, good uniformity, become the ideal chose of micro spectrometer. BaseIn the micro spectrometer of short-wave infrared InGaAs detector, conventionally adopt following two kinds of technical schemes: (1)Adopt InGaAs single-element detector, and scanning step device and grating, speculum etc., realize spectrum and surveyAmount. Its advantage is that cost is low, and its shortcoming is that instrument internal has moving component, affects the long-time stability of instrumentAnd reliability. (2) adopt InGaAs Linear FPA detector assembly and grating, speculum etc., instrumentInside is all solid state formula beam splitting system, and its stability and reliability significantly promote, and the integrated level level of instrument hasTreat further lifting.
Along with the lifting of optical design ability and working ability, prior art likely realizes 0.9 μ m～1.7 μ mThe monolithic multi-channel digital optical splitter of wave band. For the application demand of micro spectrometer, by monolithic multichannelDigital optical splitter is integrated into InGaAs focus planardetector component internal, realizes short-wave infrared multichannel collectionBecome spectrum assembly, will significantly simplify the structure of spectrometer, improve stability and the long-term reliability of instrument, andCan suppress veiling glare, significant to the technical development of micro spectrometer.
Summary of the invention
This patent proposes short-wave infrared InGaAs alignment Jiao of the digital optical splitter of a kind of inner integrated multi-channelPlanar detector assembly, is applied to micro spectrometer and novel sensor networking spectrum sensing node.
The principal character of this patent is: for improving the integrated level level of micro spectrometer and spectrum sensing nodeWith long-term reliability, invent a kind of short-wave infrared multichannel integration spectrum assembly, comprise high-aspect-ratio InGaAsAlignment photosensor chip 1, reading circuit 2, transition electrode plate 3, temperature detecting resistance 4, semiconductor cooler 5,Multi-channel digital optical splitter 6, window 7, Can 8 and cover plate 9.
Described multi-channel digital optical splitter 6, as the beam splitter of micro spectrometer, passes through edge metalChange welding, direct and high-aspect-ratio InGaAs alignment photosensor chip 1 is coupled, and how is logically integrated into short-wave infraredIn road integration spectrum assembly.
The photosensitive unit of described high-aspect-ratio InGaAs alignment photosensor chip 1 is rectangle structure, length-width ratioFor 10:1 or 20:1; Photosensitive first length is 500 μ m～1000 μ m, and photosensitive first width is 25 μ m～50 μ m,Alignment scale is 256 × 1 or 512 × 1, spectral response range 0.9 μ m～1.7 μ m.
Described multi-channel digital optical splitter 6 is a monolithic multichannel short-wave infrared optical filter, and spectrum is logicalRoad number is 64,128 or 256, and the spectrum continuous uniform of each passage distributes or be discontinuously arranged, Mei GetongSpectral bandwidth 2nm～the 5nm in road, centre wavelength positioning precision ± 1nm, transmitance >=50%, single passageInterior spectral noise is less than 1%, and interchannel cross-talk is less than 1%, and the area deposition beyond point optical channel is shortThe optical thin film that ripple infrared band transmitance is less than 0.1%, suppresses veiling glare.
Described high-aspect-ratio InGaAs alignment photosensor chip 1 interconnects by inverse bonding with reading circuit 2, manyThe digital optical splitter 6 of passage is by the region beyond edge metalization welding spectrum channel, directly with high length and widthBe coupled than InGaAs alignment photosensor chip 1, be integrated in short-wave infrared multichannel integration spectrum assembly, closeBe enclosed in Can 8 inside, in tiny area, form the integration spectrum assembly that has multiple spectrum channels.
The technical scheme of this patent is as follows: high-aspect-ratio InGaAs alignment photosensor chip 1 and reading circuit 2Interconnect by inverse bonding, form focal plane module, be glued on transition electrode plate 3; At high-aspect-ratio InGaAsOn alignment photosensor chip 1, aim at assembling multi-channel digital optical splitter 6; In Can 8, welding halfConductor refrigerator 5; Semiconductor cooler 5 gluings are taken over and are crossed battery lead plate 3; Temperature detecting resistance 4 glueds joint transition electricityOn pole plate 3; Window 7 is welded on cover plate 9; Cover plate 9 carries out welded seal with Can 8. Wherein,Reading circuit 2 is realized electricity with transition electrode plate 3 by wire and is connected, transition electrode plate 3, thermometric electricityResistance 4 realizes electricity with the pin of Can 8 by wire and is connected.
The advantage of this patent is:
1. high-aspect-ratio InGaAs alignment photosensor chip 1 adopts the photosensitive unit knot of length-width ratio 10:1 or 20:1Structure, can effectively improve the signal to noise ratio of spectral measurement;
2. multi-channel digital optical splitter 6 can be realized the finely regulating of spectrum on single substrate, and suppressesSpectral noise in each passage, interchannel cross-talk, the outer veiling glare of passage;
Multi-channel digital optical splitter 6 directly and high-aspect-ratio InGaAs alignment photosensor chip 1 be coupled,Be integrated into detector assembly inside, in tiny area, realize multiple spectrum channels;
4. spectrum assembly is simplified the beam splitting system of micro spectrometer greatly, improves the reliability of instrument and stablizesProperty, alleviates the weight of instrument.
Brief description of the drawings
Fig. 1 is the photosensitive unit of the InGaAs alignment chip schematic diagram of arranging.
Fig. 2 is multi-channel digital optical splitter schematic diagram.
Fig. 3 is short-wave infrared multichannel integration spectrum modular construction schematic diagram.
Wherein:
P1---the 1st photosensitive unit;
P2---the 2nd photosensitive unit;
P3---the 3rd photosensitive unit;
P255---the 255th photosensitive unit;
P256---the 256th photosensitive unit;
F1---the 1st spectrum channel;
F2---the 2nd spectrum channel;
F3---the 3rd spectrum channel;
F126---the 126th spectrum channel;
F127---the 127th spectrum channel;
F128---the 128th spectrum channel;
1---high-aspect-ratio InGaAs alignment photosensor chip;
2---reading circuit;
3---transition electrode plate;
4---temperature detecting resistance;
5---semiconductor cooler;
6---multi-channel digital optical splitter;
7---window;
8---Can;
9---cover plate.
Detailed description of the invention
Below in conjunction with accompanying drawing, enforcement of the present invention is further described.
Embodiment mono-:
The present embodiment is 128 × 1 short-wave infrared multichannel integration spectrum assemblies.
Press shown in Fig. 1, photosensitive first length-width ratio of back illumination InGaAs alignment chip is 10:1, p1 and p2Centre-to-centre spacing 50 μ m, photosensitive first length 500 μ m, chip-scale is 256 × 1, spectral response range is0.9 μ m～1.7 μ m. By reading of 1 and 1 256 × 1 scale of InGaAs alignment chip of 1 256 × 1Go out circuit 2 by In post inverse bonding interconnection, form 256 × 1 back illumination focal plane modules.
Press shown in Fig. 2, multi-channel digital optical splitter 6 is the short-wave infrared optical splitter of 128 × 1 passages,On the sapphire sheet substrate of 300 μ m～500 μ m thickness, in the spectral region of 0.9 μ m～1.7 μ m, noContinuous distributed 128 spectrum channels, the centre-to-centre spacing of f1 and f2 is 100 μ m, the band of each spectrum channelWide is 3nm, and transmitance is 50%～60%, and the spectral noise in single passage is less than 1%, interchannelCross-talk is less than 1%, area deposition beyond point optical channel short infrared wave band transmitance be less than 0.1%Optical thin film.
Press shown in Fig. 3, in Can 8, adopt 5,120 DEG C of high temperature of silver slurry welding semiconductor coolerSolidify 6～8 hours, then epoxy glue glueds joint 3,60 DEG C of transition electrode plates and solidifies 12～18 hours. In mistakeCross on battery lead plate 3, adopt epoxy glue to glued joint temperature detecting resistance 4, centered assembling back illumination 256 × 1 focal plane mouldsPiece, reading circuit 2 adopts the Si/Al silk of Ф 25 μ m～Ф 50 μ m by ultrasonic wedge with transition electrode plate 3Electricity connection is carried out in weldering. Under 50 times of high-accuracy projectors, by the digital optical splitter of 128 × 1 passage 6 with256 × 1 back illumination InGaAs alignment chips 1 are aimed at assembling, and the fringe region beyond spectrum channel carries out goldBelong to indium weldering, the photosensitive unit of corresponding p1, the p2 of f1 passage, the photosensitive unit of corresponding p3, the p4 of f2 passage, the like,The photosensitive unit of corresponding p255, the p256 of f128 passage. The pin of transition electrode plate 3 and Can 8, adoptsThe Si/Al silk of Ф 25 μ m～Ф 50 μ m carries out electricity connection by ultrasonic wedge bonding. The fringe region of window 7Carry out indium metal weldering with cover plate 9 tappings, cover plate 9 is undertaken by the mode of parallel seam welding with Can 8Sealing.
Embodiment bis-:
The present embodiment is 128 × 1 short-wave infrared multichannel integration spectrum assemblies.
Press shown in Fig. 1, photosensitive first length-width ratio of back illumination InGaAs alignment chip is 20:1, p1 and p2Centre-to-centre spacing 50 μ m, photosensitive first length 1000 μ m, chip-scale is 256 × 1, spectral response range is0.9 μ m～1.7 μ m. By reading of 1 and 1 256 × 1 scale of InGaAs alignment chip of 1 256 × 1Go out circuit 2 by In post inverse bonding interconnection, form 256 × 1 back illumination focal plane modules.
Press shown in Fig. 2, multi-channel digital optical splitter 6 is the short-wave infrared optical splitter of 128 × 1 passages,On the sapphire sheet substrate of 300 μ m～500 μ m thickness, in the spectral region of 0.9 μ m～1.7 μ m, noContinuous distributed 128 spectrum channels, the centre-to-centre spacing of f1 and f2 is 100 μ m, the band of each spectrum channelWide is 3nm, and transmitance is 50%～60%, and the spectral noise in single passage is less than 1%, interchannelCross-talk is less than 1%, area deposition beyond point optical channel short infrared wave band transmitance be less than 0.1%Optical thin film.
Press shown in Fig. 3, in Can 8, adopt 5,120 DEG C of high temperature of silver slurry welding semiconductor coolerSolidify 6～8 hours, then epoxy glue glueds joint 3,60 DEG C of transition electrode plates and solidifies 12～18 hours. In mistakeCross on battery lead plate 3, adopt epoxy glue to glued joint temperature detecting resistance 4, centered assembling back illumination 256 × 1 focal plane mouldsPiece, reading circuit 2 adopts the Si/Al silk of Ф 25 μ m～Ф 50 μ m by ultrasonic wedge with transition electrode plate 3Electricity connection is carried out in weldering. Under 50 times of high-accuracy projectors, by the digital optical splitter of 128 × 1 passage 6 with256 × 1 back illumination InGaAs alignment chips 1 are aimed at assembling, and the fringe region beyond spectrum channel carries out goldBelong to indium weldering, the photosensitive unit of corresponding p1, the p2 of f1 passage, the photosensitive unit of corresponding p3, the p4 of f2 passage, the like,The photosensitive unit of corresponding p255, the p256 of f128 passage. The pin of transition electrode plate 3 and Can 8, adoptsThe Si/Al silk of Ф 25 μ m～Ф 50 μ m carries out electricity connection by ultrasonic wedge bonding. The fringe region of window 7Carry out indium metal weldering with cover plate 9 tappings, cover plate 9 is undertaken by the mode of parallel seam welding with Can 8Sealing.
Claims (3)
1. a short-wave infrared multichannel integration spectrum assembly, comprises the photosensitive core of high-aspect-ratio InGaAs alignmentSheet (1), reading circuit (2), transition electrode plate (3), temperature detecting resistance (4), semiconductor cooler (5),Multi-channel digital optical splitter (6), window (7), Can (8) and cover plate (9), its feature existsIn:
Described high-aspect-ratio InGaAs alignment photosensor chip (1) is mutual by inverse bonding with reading circuit (2)Connect, multi-channel digital optical splitter (6) is by the region beyond edge metalization welding spectrum channel, straightConnect and high-aspect-ratio InGaAs alignment photosensor chip (1) coupling, be integrated into short-wave infrared multichannel Integrated LightIn spectrum assembly, be sealed in the inside of a Can (8), in tiny area, form and have multiple spectrumThe integration spectrum assembly of passage.
2. a kind of short-wave infrared multichannel integration spectrum assembly according to claim 1, its feature existsIn: the photosensitive unit of described high-aspect-ratio InGaAs alignment photosensor chip (1) is rectangle structure, length and widthThan being 10:1 or 20:1.
3. a kind of short-wave infrared multichannel integration spectrum assembly according to claim 1, its feature existsIn: described multi-channel digital optical splitter (6) is a monolithic multichannel short-wave infrared optical filter, lightSpectrum port number is 64,128 or 256, and the spectrum continuous uniform of each passage distributes or be discontinuously arranged, everySpectral bandwidth 2nm～the 5nm of individual passage, centre wavelength positioning precision ± 1nm, transmitance >=50%, singleSpectral noise in passage is less than 1%, and interchannel cross-talk is less than 1%, and the region beyond point optical channel is heavyThe optical thin film that long-pending short infrared wave band transmitance is less than 0.1%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520978955.4U CN205246212U (en) | 2015-07-16 | 2015-12-01 | Integrated spectrum subassembly of infrared multichannel of shortwave |
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| CN2015104167126 | 2015-07-16 | ||
| CN201510416712.6A CN105021278A (en) | 2015-07-16 | 2015-07-16 | Short wave infrared multichannel integrated spectral assembly |
| CN201520978955.4U CN205246212U (en) | 2015-07-16 | 2015-12-01 | Integrated spectrum subassembly of infrared multichannel of shortwave |
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| CN201520978955.4U Expired - Fee Related CN205246212U (en) | 2015-07-16 | 2015-12-01 | Integrated spectrum subassembly of infrared multichannel of shortwave |
| CN201510864335.2A Active CN105371951B (en) | 2015-07-16 | 2015-12-01 | A kind of short-wave infrared multichannel integration spectrum component |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105371951A (en) * | 2015-07-16 | 2016-03-02 | 中国科学院上海技术物理研究所 | Short-wave-infrared multichannel integrated optical spectrum assembly |
| CN107888810A (en) * | 2017-11-13 | 2018-04-06 | 合肥美亚光电技术股份有限公司 | InGaAs infrared cameras and control method |
| CN109029726A (en) * | 2018-05-25 | 2018-12-18 | 西北工业大学 | A kind of window integrated form spectrum/polarized imaging system |
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| CN105572880B (en) * | 2016-03-23 | 2018-08-28 | 山东大学 | A kind of incident optical system and its working method near infrared spectrum sensing node |
| CN106449548A (en) * | 2016-10-28 | 2017-02-22 | 中国电子科技集团公司第四十四研究所 | Mini type packaging structure for electronic multiplying charge-coupled device |
| CN107290053A (en) * | 2017-05-27 | 2017-10-24 | 中国科学院上海技术物理研究所 | Miniature long wave near-infrared Internet of things node based on linear variable filter |
| CN108169807B (en) * | 2017-12-27 | 2019-08-02 | 长光卫星技术有限公司 | A kind of integrated form short-wave infrared optical imaging system |
| US10859436B2 (en) * | 2019-02-19 | 2020-12-08 | Renesas Electronics America Inc. | Spectrometer on a chip |
| CN110855899B (en) * | 2019-10-18 | 2021-01-01 | 山东大学 | High dynamic range imaging method of InGaAs short wave infrared camera based on correlated double sampling |
| CN112556847A (en) * | 2020-11-27 | 2021-03-26 | 云南昆物新跃光电科技有限公司 | InGaAs multi-line photosensitive chip and application thereof |
| CN113419289A (en) * | 2021-05-13 | 2021-09-21 | 中国电子科技集团公司第十一研究所 | Method for mounting multi-spectral filter for infrared detector and infrared detector |
| CN114242711A (en) * | 2021-12-17 | 2022-03-25 | 电子科技大学 | Preparation process of hyperspectral photoelectric detector |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040110071A (en) * | 2002-04-23 | 2004-12-29 | 히로무 마에다 | Small packaged spectroscopic sensor unit |
| CN1193213C (en) * | 2002-05-13 | 2005-03-16 | 重庆大学 | Integrated miniature spectrometer |
| US7167249B1 (en) * | 2003-11-25 | 2007-01-23 | Kestrel Corporation | High efficiency spectral imager |
| CN101871816B (en) * | 2010-06-03 | 2012-02-29 | 北京航空航天大学 | Modularized split Sagnac interferometer |
| CN103500749B (en) * | 2013-10-10 | 2016-09-28 | 中国科学院上海技术物理研究所 | A kind of super long alignment InGaAs detector encapsulating structure of thermoelectric cooling |
| CN105021278A (en) * | 2015-07-16 | 2015-11-04 | 中国科学院上海技术物理研究所 | Short wave infrared multichannel integrated spectral assembly |
-
2015
- 2015-07-16 CN CN201510416712.6A patent/CN105021278A/en active Pending
- 2015-12-01 CN CN201520978955.4U patent/CN205246212U/en not_active Expired - Fee Related
- 2015-12-01 CN CN201510864335.2A patent/CN105371951B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105371951A (en) * | 2015-07-16 | 2016-03-02 | 中国科学院上海技术物理研究所 | Short-wave-infrared multichannel integrated optical spectrum assembly |
| CN107888810A (en) * | 2017-11-13 | 2018-04-06 | 合肥美亚光电技术股份有限公司 | InGaAs infrared cameras and control method |
| CN107888810B (en) * | 2017-11-13 | 2024-03-01 | 合肥美亚光电技术股份有限公司 | InGaAs infrared camera and control method |
| CN109029726A (en) * | 2018-05-25 | 2018-12-18 | 西北工业大学 | A kind of window integrated form spectrum/polarized imaging system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105371951A (en) | 2016-03-02 |
| CN105371951B (en) | 2018-10-23 |
| CN105021278A (en) | 2015-11-04 |
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