CN205246212U - Integrated spectrum subassembly of infrared multichannel of shortwave - Google Patents

Abstract

This patent discloses a short-wave infrared multi-channel integrated spectrum component, which includes: a high aspect ratio InGaAs linear photosensitive chip, a readout circuit, a transition electrode plate, a temperature measuring resistor, a semiconductor refrigerator, a multi-channel digital beam splitter, and a window , Metal shell and cover. The multi-channel digital spectrometer, as the spectroscopic element of the miniature spectrometer, is directly fixed on the high aspect ratio InGaAs linear photosensitive chip through edge metallization welding, and is integrated inside the detector assembly. The advantages of this patent are: the photosensitive element of the InGaAs linear photosensitive chip has a high aspect ratio structure, which can improve the signal-to-noise ratio of the spectrum test; Spectral noise, crosstalk between channels, and stray light outside the channel; the detection of multiple spectral channels in the detector assembly simplifies the structure of the micro-spectrometer, improves the reliability and stability of the instrument, and reduces the weight of the instrument.

Description

Short-wave infrared multi-channel integrated spectrum component

technical field

The patent relates to an InGaAs detector component, in particular to an InGaAs detector component integrated with a multi-channel digital beam splitter used in a miniature spectrometer.

Background technique

Miniature spectrometers have a wide range of application requirements in agriculture, food, industry and other fields. They are ideal instruments for on-site quality inspection and on-line inspection. . The short-wave infrared InGaAs detector has the advantages of uncooled room temperature operation, high detection rate and good uniformity in the 0.9 μm ~ 1.7 μm band, and has become an ideal choice for miniature spectrometers. Micro-spectrometers based on short-wave infrared InGaAs detectors usually adopt the following two technical solutions: (1) use InGaAs unit detectors, and scanning stepping devices, gratings, mirrors, etc. to achieve spectral measurement. Its advantage is low cost, and its disadvantage is that there are moving parts inside the instrument, which affects the long-term stability and reliability of the instrument. (2) InGaAs line-column focal plane detector components, gratings, mirrors, etc. are used. The interior of the instrument is an all-solid-state spectroscopic system, and its stability and reliability are greatly improved. The integration level of the instrument needs to be further improved.

With the improvement of optical design capabilities and processing capabilities, it is possible to realize a single-chip multi-channel digital optical splitter in the 0.9 μm ~ 1.7 μm band with the existing technology. For the application requirements of micro-spectrometers, the single-chip multi-channel digital spectrometer is integrated into the InGaAs focal plane detector component to realize the short-wave infrared multi-channel integrated spectral component, which will greatly simplify the structure of the spectrometer and improve the stability and long-term reliability of the instrument. Sex, and can suppress stray light, which is of great significance to the technical development of micro-spectrometers.

Contents of the invention

This patent proposes a short-wave infrared InGaAs linear focal plane detector component integrated with a multi-channel digital beam splitter, which is applied to a micro-spectrometer and a new type of sensing IoT spectrum sensing node.

The main features of this patent are: In order to improve the integration level and long-term reliability of micro-spectrometers and spectral sensing nodes, a short-wave infrared multi-channel integrated spectral component is invented, including a high aspect ratio InGaAs linear photosensitive chip 1, a readout circuit 2, Transition electrode plate 3, temperature measuring resistor 4, semiconductor cooler 5, multi-channel digital beam splitter 6, window 7, metal tube shell 8 and cover plate 9.

The multi-channel digital spectrometer 6 is used as the spectroscopic element of the miniature spectrometer. It is directly coupled with the high aspect ratio InGaAs linear photosensitive chip 1 through edge metallization welding, and integrated into the short-wave infrared multi-channel integrated spectrum component.

The photosensitive element of the high aspect ratio InGaAs linear photosensitive chip 1 has a rectangular structure, the aspect ratio is 10:1 or 20:1; 256×1 or 512×1, the spectral response range is 0.9μm～1.7μm.

The multi-channel digital spectrometer 6 is a single-chip multi-channel short-wave infrared filter, the number of spectral channels is 64, 128 or 256, the spectrum of each channel is continuously and evenly distributed or discontinuously distributed, and the spectral bandwidth of each channel is 2nm to 5nm, central wavelength positioning accuracy ±1nm, transmittance ≥ 50%, spectral noise within a single channel is less than 1%, crosstalk between channels is less than 1%, and short-wave infrared band transmittance is deposited in areas other than the splitting channel Less than 0.1% optical film, suppresses stray light.

The high aspect ratio InGaAs linear photosensitive chip 1 and the readout circuit 2 are interconnected by reverse soldering, and the multi-channel digital beam splitter 6 is directly connected to the high aspect ratio InGaAs linear photosensitive chip 1 through edge metallization soldering to the region other than the spectral channel. Coupling, integrated into the short-wave infrared multi-channel integrated spectrum component, sealed inside a metal tube shell 8, forming an integrated spectrum component with multiple spectral channels in a small area.

The technical scheme of this patent is as follows: the high aspect ratio InGaAs line array photosensitive chip 1 and the readout circuit 2 are interconnected by reverse welding to form a focal plane module, which is glued on the transition electrode plate 3; on the high aspect ratio InGaAs line array photosensitive chip 1 Align and assemble the multi-channel digital beam splitter 6; weld the semiconductor cooler 5 in the metal tube shell 8; glue the transition electrode plate 3 on the semiconductor cooler 5; glue the transition electrode plate 3 on the temperature measuring resistor 4; The window 7 is welded on the cover plate 9; the cover plate 9 and the metal tube shell 8 are welded and sealed. Wherein, the readout circuit 2 and the transition electrode plate 3 are electrically connected through metal wires, and the transition electrode plate 3, the temperature measuring resistor 4 and the pins of the metal casing 8 are electrically connected through metal wires.

The advantage of this patent is:

1. The high aspect ratio InGaAs linear photosensitive chip 1 adopts a photosensitive element structure with an aspect ratio of 10:1 or 20:1, which can effectively improve the signal-to-noise ratio of spectral measurement;

2. The multi-channel digital optical splitter 6 can realize fine control of the spectrum on a single substrate, and suppress spectral noise in each channel, crosstalk between channels, and stray light outside the channel;

3. The multi-channel digital beam splitter 6 is directly coupled with the high aspect ratio InGaAs linear photosensitive chip 1 and integrated into the detector assembly to realize multiple spectral channels in a small area;

4. The spectral component greatly simplifies the spectroscopic system of the miniature spectrometer, improves the reliability and stability of the instrument, and reduces the weight of the instrument.

Description of drawings

FIG. 1 is a schematic diagram of the arrangement of photosensitive elements of an InGaAs linear chip.

Fig. 2 is a schematic diagram of a multi-channel digital optical splitter.

Fig. 3 is a schematic diagram of the structure of the short-wave infrared multi-channel integrated spectrum component.

in:

p1——the first photosensitive element;

p2——the second photosensitive element;

p3——the third photosensitive element;

p255 - the 255th photosensitive element;

p256 - the 256th photosensitive element;

f1——the first spectral channel;

f2——the second spectral channel;

f3——the third spectral channel;

f126——the 126th spectral channel;

f127——the 127th spectral channel;

f128——the 128th spectral channel;

1——High aspect ratio InGaAs linear photosensitive chip;

2 - readout circuit;

3——transition electrode plate;

4——temperature measuring resistance;

5 - semiconductor refrigerator;

6——Multi-channel digital optical splitter;

7 - window;

8——Metal shell;

9——Cover plate.

detailed description

The implementation of the present invention will be further described below in conjunction with the accompanying drawings.

Embodiment one:

This embodiment is a 128×1 short-wave infrared multi-channel integrated spectrum component.

As shown in Figure 1, the aspect ratio of the photosensitive element of the back-illuminated InGaAs linear chip is 10:1, the center distance between p1 and p2 is 50 μm, the length of the photosensitive element is 500 μm, the chip size is 256×1, and the spectral response range is 0.9 μm to 1.7 μm. A 256×1 InGaAs linear array chip 1 and a 256×1 readout circuit 2 are interconnected through In-column flip-bonding to form a 256×1 back-illuminated focal plane module.

As shown in Figure 2, the multi-channel digital beam splitter 6 is a short-wave infrared beam splitter with 128 × 1 channel. On a sapphire substrate with a thickness of 300 μm to 500 μm, within the spectral range of 0.9 μm to 1.7 μm, 128 The center distance between f1 and f2 is 100μm, the bandwidth of each spectral channel is 3nm, the transmittance is 50%~60%, the spectral noise in a single channel is less than 1%, and the crosstalk between channels is less than 1%. , an optical film with a transmittance of less than 0.1% in the short-wave infrared band is deposited in the area outside the light-splitting channel.

As shown in Figure 3, in the metal tube shell 8, the semiconductor refrigerator 5 is welded with silver paste, cured at a high temperature of 120°C for 6-8 hours, and then the transition electrode plate 3 is glued with epoxy glue, cured at 60°C for 12-18 hours . On the transition electrode plate 3, the temperature measuring resistor 4 is bonded with epoxy glue, and the back-illuminated 256×1 focal plane module is assembled in the center. The readout circuit 2 and the transition electrode plate 3 use Ф25μm～Ф50μm Si/Al wire through ultrasonic Wedge soldering for electrical connection. Under the 50 times high-precision projector, the 128×1 channel digital beam splitter 6 is aligned with the 256×1 back-illuminated InGaAs line array chip 1, and the edge area outside the spectral channel is soldered with metal indium, and the f1 channel corresponds to p1, P2 photosensitive element, f2 channel corresponds to p3, p4 photosensitive element, and so on, f128 channel corresponds to p255, p256 photosensitive element. The pins of the transition electrode plate 3 and the metal casing 8 are electrically connected by ultrasonic wedge welding with Si/Al wires of Ф25 μm˜Ф50 μm. Metal indium welding is performed between the edge area of the window 7 and the opening of the cover plate 9 , and the cover plate 9 and the metal shell 8 are sealed by parallel seam welding.

Embodiment two:

This embodiment is a 128×1 short-wave infrared multi-channel integrated spectrum component.

As shown in Figure 1, the aspect ratio of the photosensitive element of the back-illuminated InGaAs linear chip is 20:1, the center distance between p1 and p2 is 50 μm, the length of the photosensitive element is 1000 μm, the chip size is 256×1, and the spectral response range is 0.9 μm to 1.7 μm. A 256×1 InGaAs linear array chip 1 and a 256×1 readout circuit 2 are interconnected through In-column flip-bonding to form a 256×1 back-illuminated focal plane module.

As shown in Figure 2, the multi-channel digital beam splitter 6 is a short-wave infrared beam splitter with 128 × 1 channel. On a sapphire substrate with a thickness of 300 μm to 500 μm, within the spectral range of 0.9 μm to 1.7 μm, 128 The center distance between f1 and f2 is 100μm, the bandwidth of each spectral channel is 3nm, the transmittance is 50%~60%, the spectral noise in a single channel is less than 1%, and the crosstalk between channels is less than 1%. , an optical film with a transmittance of less than 0.1% in the short-wave infrared band is deposited in the area outside the light-splitting channel.

As shown in Figure 3, in the metal tube shell 8, the semiconductor refrigerator 5 is welded with silver paste, cured at a high temperature of 120°C for 6-8 hours, and then the transition electrode plate 3 is glued with epoxy glue, cured at 60°C for 12-18 hours . On the transition electrode plate 3, the temperature measuring resistor 4 is bonded with epoxy glue, and the back-illuminated 256×1 focal plane module is assembled in the center. The readout circuit 2 and the transition electrode plate 3 use Ф25μm～Ф50μm Si/Al wire through ultrasonic Wedge soldering for electrical connection. Under the 50 times high-precision projector, the 128×1 channel digital beam splitter 6 is aligned with the 256×1 back-illuminated InGaAs line array chip 1, and the edge area outside the spectral channel is soldered with metal indium, and the f1 channel corresponds to p1, P2 photosensitive element, f2 channel corresponds to p3, p4 photosensitive element, and so on, f128 channel corresponds to p255, p256 photosensitive element. The pins of the transition electrode plate 3 and the metal casing 8 are electrically connected by ultrasonic wedge welding with Si/Al wires of Ф25 μm˜Ф50 μm. Metal indium welding is performed between the edge area of the window 7 and the opening of the cover plate 9 , and the cover plate 9 and the metal shell 8 are sealed by parallel seam welding.

Claims (3)

1. a short-wave infrared multichannel integration spectrum assembly, comprises the photosensitive core of high-aspect-ratio InGaAs alignmentSheet (1), reading circuit (2), transition electrode plate (3), temperature detecting resistance (4), semiconductor cooler (5),Multi-channel digital optical splitter (6), window (7), Can (8) and cover plate (9), its feature existsIn:

Described high-aspect-ratio InGaAs alignment photosensor chip (1) is mutual by inverse bonding with reading circuit (2)Connect, multi-channel digital optical splitter (6) is by the region beyond edge metalization welding spectrum channel, straightConnect and high-aspect-ratio InGaAs alignment photosensor chip (1) coupling, be integrated into short-wave infrared multichannel Integrated LightIn spectrum assembly, be sealed in the inside of a Can (8), in tiny area, form and have multiple spectrumThe integration spectrum assembly of passage.

2. a kind of short-wave infrared multichannel integration spectrum assembly according to claim 1, its feature existsIn: the photosensitive unit of described high-aspect-ratio InGaAs alignment photosensor chip (1) is rectangle structure, length and widthThan being 10:1 or 20:1.

3. a kind of short-wave infrared multichannel integration spectrum assembly according to claim 1, its feature existsIn: described multi-channel digital optical splitter (6) is a monolithic multichannel short-wave infrared optical filter, lightSpectrum port number is 64,128 or 256, and the spectrum continuous uniform of each passage distributes or be discontinuously arranged, everySpectral bandwidth 2nm～the 5nm of individual passage, centre wavelength positioning precision ± 1nm, transmitance >=50%, singleSpectral noise in passage is less than 1%, and interchannel cross-talk is less than 1%, and the region beyond point optical channel is heavyThe optical thin film that long-pending short infrared wave band transmitance is less than 0.1%.