CN217605118U

CN217605118U - Photoelectric testing device based on PCB board

Info

Publication number: CN217605118U
Application number: CN202221108818.1U
Authority: CN
Inventors: 包文中; 王馨雨; 陈洪雷
Original assignee: Fudan University
Current assignee: Fudan University
Priority date: 2022-05-11
Filing date: 2022-05-11
Publication date: 2022-10-18
Anticipated expiration: 2032-05-11

Abstract

The utility model belongs to the technical field of photoelectric detection, specifically be a photoelectric testing device based on PCB board. The utility model discloses a photoelectric testing device comprises a photoelectric detector, a reading circuit, a photoelectric shutter, a light source and a PCB; the photoelectric detector and the reading circuit are fixed to the designated position of the PCB through alcohol glue, the corresponding pin keys are pressed to reserved pads of the PCB, the photoelectric detector and the reading circuit are physically connected through the PCB, the light source vertically enters the photoelectric shutter, and the photoelectric shutter controls whether the light signal enters the surface of the detector. The structure is arranged in a Dewar, and the circuit is tested under different incident light conditions. The utility model discloses a can realize that most of photoelectric materials (tradition silica-based photoelectric material and emerging two-dimentional photoelectric material all can) carry out the photoelectric test that combines with silica-based circuit to have advantages such as test result is accurate, with low costs, easy operation.

Description

Photoelectric testing device based on PCB board

Technical Field

The utility model belongs to the technical field of photoelectric detection, concretely relates to photoelectric testing device based on PCB board.

Background

A photodetector is a device that converts an optical signal into an electrical signal. High performance photodetectors play an important role in many areas of our daily lives, including optoelectronic displays, imaging, environmental monitoring, optical communications, military, security inspection, and the like.

In recent years, photodetectors based on two-dimensional materials and their heterostructures have attracted a great deal of research interest, ranging from ultraviolet to terahertz (THz, 10), due to their unique electronic and optoelectronic properties ¹² Hz), ultra-high optical response, polarization-sensitive optical detection, high-speed optical response, high spatial resolution imaging, etc., and has remarkable achievements in the aspects of ultra-high optical response, ultra-fast optical response, ultra-wide detection band, ultra-sensitive optical detection, etc., and has wide application prospects, such as data communication, high-performance led, ultra-fast optical modulation, photoelectric detection with speed up to 80GHz, and extremely-wide-band photoelectric detection suitable for ultraviolet, visible, infrared and terahertz. In addition, applications in high-performance electronic devices and sensors, such as ultra-sensitive hall sensors, radio frequency receivers, strain sensors, biosensors, gas sensors, and high-frequency transistors, are also included. However, the above-mentioned sensors are tested in the laboratory by connecting the sensors to a separate readout system by wire bonding or probe, so it is necessary to couple the two-dimensional material-based photodetector with a CMOS readout circuit, which can achieve the advantages of accurate detection and low cost, and thus can be better applied to the above-mentioned fields.

Complementary metal-oxide-semiconductor (CMOS) based integrated circuits are the heart of the last forty years of technological revolution, enabling compact and low cost microelectronic circuits and imaging systems. But its versatility is hampered by the difficulty of integrating semiconductors other than silicon with CMOS, which is currently only applicable to microcircuits and visible light camera systems, and the difficulty of integrating non-silicon photovoltaic materials with silicon-based circuits severely hampers its application and development, including their broad imaging potential outside the visible range, low power optical data communication on-chip, and compact sensing systems.

SUMMERY OF THE UTILITY MODEL

To the problem that is difficult to combine semiconductor, especially by the wide study based on two-dimentional semiconductor material's photoelectric detector and CMOS circuit beyond the silicon at present, the utility model provides a test result is accurate, with low costs, easy operation's photoelectric test device based on PCB board can realize that most photoelectric materials (traditional silica-based photoelectric material and emerging two-dimentional photoelectric material all can) carry out the photoelectric test that combines with silica-based circuit.

The utility model provides a photoelectric testing device based on PCB board, including photoelectric detector, read-out circuit, photoelectric shutter, light source and PCB board; the photoelectric detector and the reading circuit are fixed at the designated position of the PCB through alcohol glue, then the corresponding pin keys are pressed to the reserved pad of the PCB, the photoelectric detector and the reading circuit are physically connected through the PCB, and the parameters of the photoelectric detector and the reading circuit are matched by electrical components such as internal wiring and resistance of the PCB; the photoelectric shutter is positioned right above the photoelectric detector, and the window is aligned to a photosensitive area of the detector to control whether an optical signal is emitted to the surface of the detector; the light source is positioned right above the photoelectric shutter and can vertically enter the photoelectric shutter.

In the testing device, the internal wiring of the PCB is designed to be matched in advance according to the internal structure of the photoelectric detector and the reading circuit, and the purpose is to couple the photoelectric detector and the reading circuit with correct functions.

In the above testing apparatus, the photodetector is not limited by the detection mode, and may be of a photovoltaic type or a light guide type, where the difference between the two types is whether to reserve a port of an external resistor in the design of the PCB, where the photovoltaic type detector does not need the external resistor, and the light guide type detector needs the external resistor to better match the detector with the readout circuit.

In the above testing apparatus, the photodetector is not limited by the internal structure, and may be an independent pixel unit, or a linear array or an area array structure.

In the testing device, the photoelectric detector is not limited by the type of materials, and can be a traditional silicon-based photoelectric material or a new two-dimensional photoelectric material.

In the testing device, the photoelectric detector and the reading circuit are fixed at the designated position of the PCB through the alcohol glue, and the alcohol glue can be replaced by other objects with the same functional characteristics.

In the above test apparatus, the light source may be a laser light source with adjustable light-emitting band and power, or a blackbody light source.

In the testing device, the readout circuit belongs to a conventional silicon-based circuit, and structurally comprises a CTIA input stage, an analog link, a control logic circuit, a bias generation circuit and an output stage circuit, wherein the readout circuit is not selected uniquely as long as different currents are input and corresponding to different outputs are met.

In the testing device, the reading circuit can be firstly welded on the base plate in a reverse mode, then the base plate is fixed on the PCB through the alcohol glue, and the circuit can also be directly fixed on the PCB through the alcohol glue.

Above-mentioned photoelectric test device based on PCB board carries out photoelectric test operation flow and does:

(1) Putting the PCB into a Dewar, and correspondingly connecting each line interface;

(2) Performing power-on operation on the circuit according to the sequence of the analog power supply → the digital power supply → the analog bias → the digital time sequence;

(3) Observing the waveform of the oscilloscope to ensure that the circuit is in a normal working state;

(4) And changing a light source signal, and acquiring output signals of the circuit in different states, namely realizing photoelectric detection.

In the test method, the test environment can be in a vacuum state or in a normal atmospheric pressure environment, and if the vacuum condition needs to be tested, the Dewar flask is vacuumized and then the test operation is carried out.

In the test method, the test of the non-refrigeration detector and the test of the refrigeration type detector can be carried out, and whether the liquid nitrogen is filled into the Dewar flask or not is selected according to actual requirements.

The utility model provides an in the technical background the difficult problem that exists in present semiconductor photoelectric testing field, the utility model has the advantages of: the photoelectric test of combining most photoelectric materials, especially two-dimensional photoelectric materials widely researched at present, with a silicon-based circuit can be realized, and the test result is accurate, the cost is low, and the operation is simple.

Drawings

Fig. 1 is a sectional view of an optoelectronic testing device based on a PCB board in an embodiment of the present invention.

Fig. 2 is an internal schematic diagram of a photoconductive detector coupled to a readout circuit according to an embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. The accompanying drawings are included to provide a further understanding of the invention. The specific embodiments and the related drawings of the present invention are shown in the drawings for explaining the photoelectric testing device and the testing method based on the PCB board of the present invention. The specific embodiments described herein are merely illustrative of the present invention and do not limit the scope of the invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

As shown in fig. 1, the PCB-based optoelectronic testing apparatus includes a photodetector, a readout circuit, an optoelectronic shutter, a light source, and a PCB.

In the embodiment, the photoelectric detector and the corresponding reading circuit are physically connected through the PCB, and the parameters of the electric components such as internal wiring and resistance of the PCB are matched; the photoelectric shutter is positioned right above the photoelectric detector to control the passing of the optical signal; the light source is positioned right above the photoelectric shutter.

In this embodiment, the internal routing of the PCB is designed to match the internal structure of the photodetector and the readout circuit in advance, so that the photodetector and the readout circuit are coupled with correct functions, and an excitation signal is externally added through the test system.

In this embodiment, the photodetector is not limited by the detection mode, and may be of a photovoltaic type or a light guide type, where the difference between the two types is whether a port of an external resistor needs to be reserved in the design of the PCB, where the photovoltaic type detector does not need the external resistor, and the light guide type detector needs the external resistor to better match the detector with the readout circuit, as shown in fig. 2, an internal schematic diagram of the light guide type detector and the readout circuit is shown, and a corresponding resistor is designed to divide the voltage, and the detector bias voltage is adjusted to meet the working requirement of the readout circuit, so as to achieve the optimal signal-to-noise ratio.

In this embodiment, the photodetector is not limited by an internal structure, and may be an independent pixel unit, or a linear array or an area array structure.

In this embodiment, the photodetector is not limited by the type of material, and may be a conventional silicon-based photoelectric material or an emerging two-dimensional photoelectric material.

In this embodiment, the photoelectric detector and the readout circuit are fixed to the designated position of the PCB board through the alcohol glue, and the alcohol glue can be replaced by other objects with the same functional characteristics.

In this embodiment, the photoelectric shutter is placed right above the photodetector, and the window is aligned with the photosensitive region of the detector.

In this embodiment, the light source may be a laser light source with adjustable light-emitting band and power, or a blackbody light source.

In this embodiment, the readout circuit belongs to a conventional silicon-based circuit, and includes a CTIA input stage, an analog link, a control logic circuit, a bias generation circuit, and an output stage circuit, and the readout circuit is not selected uniquely as long as it is satisfied that different currents are input and different outputs are corresponded.

In this embodiment, the readout circuit may be fixed to the PCB by first flip-chip bonding to the substrate and then using the alcohol glue, or may be fixed to the PCB by directly using the alcohol glue.

The photoelectric test device based on the PCB board carries out the photoelectric test process as follows:

(2) Electrifying the circuit according to the sequence of the analog power supply → the digital power supply → the analog bias → the digital time sequence;

In this embodiment, the testing environment may be in a vacuum state or in a normal atmospheric pressure environment, and if the vacuum condition needs to be tested, the dewar flask is vacuumized and then the testing operation is performed.

In this embodiment, the test method can be used for testing both the non-refrigeration detector and the refrigeration detector, and whether to fill liquid nitrogen into the dewar flask is selected according to actual requirements.

Above concrete implementation is right the utility model provides a scheme thought concrete support, can not injecing with this the utility model discloses a protection scope, all according to the utility model provides an thought, any change or equivalent change of equaling of doing on this scheme basis all still belong to the utility model discloses the protection scope of scheme.

Claims

1. A photoelectric testing device based on a PCB is characterized by comprising a photoelectric detector, a reading circuit, a photoelectric shutter, a light source and the PCB; the photoelectric detector and the reading circuit are fixed at the designated position of the PCB through alcohol glue, the corresponding pin keys are pressed to the reserved pad of the PCB, and the photoelectric detector and the reading circuit are physically connected through the PCB; the internal wiring and the electrical components of the PCB match parameters of the PCB and the electrical components; the photoelectric shutter is positioned right above the photoelectric detector, and the window is aligned to a photosensitive area of the detector to control whether an optical signal is emitted to the surface of the detector; the light source is positioned right above the photoelectric shutter and vertically enters the photoelectric shutter.

2. The optoelectronic testing device of claim 1, wherein the internal traces of the PCB are pre-matched according to the internal structure of the photodetector and the readout circuitry, so that the photodetector and the readout circuitry are properly coupled.

3. Optoelectronic testing device according to claim 1, characterized in that said photodetectors are of the photovoltaic type or of the photoconductive type; for the light guide type detector, the PCB is designed with an external resistor, so that the detector is better matched with a reading circuit.

4. The optoelectronic testing apparatus of claim 1, wherein the photodetectors are individual pixel units, or are in a linear or planar array configuration.

5. The optoelectronic testing device of claim 1, wherein the optoelectronic detector is a conventional silicon-based optoelectronic material or an emerging two-dimensional optoelectronic material.

6. The optoelectronic testing apparatus of claim 1, wherein the light source is a laser source with adjustable light-emitting wavelength band and power, or a blackbody light source.

7. The optoelectronic testing apparatus of claim 1, wherein the readout circuit is a silicon-based circuit, and the structure comprises a CTIA input stage, an analog link, a control logic circuit, a bias voltage generation circuit, and an output stage circuit.

8. The optoelectronic testing apparatus of claim 1, wherein the readout circuitry is flip-chip bonded to the substrate and the substrate is attached to the PCB with an alcohol glue, or the readout circuitry is directly attached to the PCB with an alcohol glue.