CN105021278A - Short wave infrared multichannel integrated spectral assembly - Google Patents
Short wave infrared multichannel integrated spectral assembly Download PDFInfo
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- CN105021278A CN105021278A CN201510416712.6A CN201510416712A CN105021278A CN 105021278 A CN105021278 A CN 105021278A CN 201510416712 A CN201510416712 A CN 201510416712A CN 105021278 A CN105021278 A CN 105021278A
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Abstract
The invention discloses a short wave infrared multichannel integrated spectral assembly. The short wave infrared multichannel integrated spectral assembly includes a high length-breadth ratio InGaAs linear array photosensitive chip, a readout circuit, a transition electrode plate, a temperature measuring resistor, a semiconductor refrigerating device, a multichannel digital optical splitter, a window, a metal pipe shell and a cover plate; the multichannel digital optical splitter is adopted as an optical splitting element of a miniature spectrometer and is directly fixed to the high length-breadth ratio InGaAs linear array photosensitive chip through edge metalized welding, so as to be integrated in the detector assembly. According to the short wave infrared multichannel integrated spectral assembly adopted, the photosensitive element of the InGaAs linear array photosensitive chip is of a high length-breadth ratio structure, and therefore, the signal-to-noise ratio of a spectral test can be improved; according to the multichannel digital optical splitter, fine adjustment and control of spectra can be realized on a single chip, and spectral noises in each channel, crosstalk between the channels and stray light outside the channels can be inhibited; and with the detector assembly adopted, detection of a plurality of spectral channels can be realized, and the structure of the miniature spectrometer can be simplified, and the reliability and stability of the instrument can be improved, and the weight of the instrument can be decreased.
Description
Technical field
A kind of InGaAs detector assembly of the present invention, is specifically related to the InGaAs detector assembly that a kind of inside being applied to micro spectrometer is integrated with multi-channel digital optical splitter.
Background technology
Micro spectrometer has a wide range of applications demand in fields such as agricultural, food, industry, is that on-the-spot quality examines the desirable instrument with on-line checkingi soon, have fast, high flux, harmless, pollution-free, high precision, low cost and the advantage such as easy to operate.Short-wave infrared InGaAs detector has the advantages such as non-brake method working and room temperature, detectivity is high, homogeneity is good at 0.9 μm ~ 1.7 mu m wavebands, becomes the ideal chose of micro spectrometer.Based on the micro spectrometer of short-wave infrared InGaAs detector, usually adopt following two kinds of technical schemes: (1) adopts InGaAs single-element detector, and scan step device and grating, catoptron etc., realize spectral measurement.Its advantage is that cost is low, and its shortcoming is that instrument internal has moving component, affects long-time stability and the reliability of instrument.(2) adopt InGaAs Linear FPA detector assembly and grating, catoptron etc., instrument internal is all solid state formula beam splitting system, and its stability and reliability significantly promote, and the integrated level level of instrument needs to be further improved.
Along with the lifting of optical design ability and working ability, prior art likely realizes the monolithic multi-channel digital optical splitter of 0.9 μm ~ 1.7 mu m wavebands.For the application demand of micro spectrometer, monolithic multi-channel digital optical splitter is integrated into InGaAs focus planardetector component internal, realize short-wave infrared hyperchannel integration spectrum assembly, to significantly simplify the structure of spectrometer, improve stability and the long-term reliability of instrument, and can parasitic light be suppressed, significant to the technical development of micro spectrometer.
Summary of the invention
The present invention proposes the short-wave infrared InGaAs Linear FPA detector assembly of the digital optical splitter of a kind of inner integrated multi-channel, is applied to micro spectrometer and novel sensor networking spectrum sensing node.
The present invention is characterized in: for improving integrated level level and the long-term reliability of micro spectrometer and spectrum sensing node, invent a kind of short-wave infrared hyperchannel integration spectrum assembly, comprise high-aspect-ratio InGaAs alignment photosensor chip 1, sensing circuit 2, transition electrode plate 3, temperature detecting resistance 4, semiconductor cooler 5, multi-channel digital optical splitter 6, window 7, Can 8 and cover plate 9.Wherein:
Described high-aspect-ratio InGaAs alignment photosensor chip 1 is back illumination chip, adopt the photosensitive unit of high aspect ratio structures, length breadth ratio is 10:1 or 20:1, photosensitive first length is 500 μm ~ 1000 μm, photosensitive first width is 25 μm ~ 50 μm, alignment scale is 256 × 1 or 512 × 1, spectral response range 0.9 μm ~ 1.7 μm;
Described multi-channel digital optical splitter 6 is a monolithic hyperchannel short-wave infrared optical filter, realize the finely regulating of spectrum on a single substrate, spectrum channel number is 64,128 or 256, the spectrum continuous uniform distribution of each passage or to be discontinuously uniformly distributed, spectral bandwidth 2nm ~ the 5nm of each passage, centre wavelength positioning precision ± 1nm, transmitance >=50%, spectral noise in single passage is less than 1%, interchannel cross-talk is less than 1%, the optical thin film that area deposition short infrared wave band transmitance beyond point optical channel is less than 0.1%, suppresses parasitic light;
Described high-aspect-ratio InGaAs alignment photosensor chip 1 is interconnected by inverse bonding with sensing circuit 2, multi-channel digital optical splitter 6 is by the region beyond metallization welding spectrum channel, directly be coupled with high-aspect-ratio InGaAs alignment photosensor chip 1, be integrated in short-wave infrared hyperchannel integration spectrum assembly, be sealed in a Can 9 inner, in tiny area, realize multiple spectrum channel.
Technical scheme of the present invention is as follows: high-aspect-ratio InGaAs alignment photosensor chip 1 and sensing circuit 2 are interconnected by inverse bonding, forms focal plane module, is glued on transition electrode plate 3; High-aspect-ratio InGaAs alignment photosensor chip 1 is aimed at assembling multi-channel digital optical splitter 6; In Can 8, welding semiconductor cooler 5; Semiconductor cooler 5 gluing is taken over and is crossed battery lead plate 3; Temperature detecting resistance 4 glueds joint on transition electrode plate 3; Window 7 is welded on cover plate 9; Cover plate 9 and Can 8 carry out welded seal.Wherein, sensing circuit 2 realizes electricity with transition electrode plate 3 by tinsel and is connected, and transition electrode plate 3, temperature detecting resistance 4 realize electricity with the pin of Can 9 by tinsel and be connected.
The invention has the advantages that:
1. high-aspect-ratio InGaAs alignment photosensor chip 1 adopts the photosensitive meta structure of length breadth ratio 10:1 or 20:1, effectively can improve the signal to noise ratio (S/N ratio) of spectral measurement;
2. multi-channel digital optical splitter 6 can realize the finely regulating of spectrum on a single substrate, and suppresses the outer parasitic light of the spectral noise in each passage, interchannel cross-talk, passage;
3. multi-channel digital optical splitter 6 is directly coupled with high-aspect-ratio InGaAs alignment photosensor chip 1, is integrated into detector assembly inside, realizes multiple spectrum channel in tiny area;
4. spectrum assembly simplifies the beam splitting system of micro spectrometer greatly, improves the reliability and stability of instrument, alleviates the weight of instrument.
Accompanying drawing explanation
Fig. 1 is the photosensitive unit arrangement schematic diagram of InGaAs alignment chip.
Fig. 2 is multi-channel digital optical splitter schematic diagram.
Fig. 3 is short-wave infrared hyperchannel integration spectrum modular construction schematic diagram.
Wherein:
P1---the 1st photosensitive unit;
P2---the 2nd photosensitive unit;
P3---the 3rd photosensitive unit;
P255---the 255th photosensitive unit;
P256---the 256th photosensitive unit;
F1---the 1st spectrum channel;
F2---the 2nd spectrum channel;
F3---the 3rd spectrum channel;
F126---the 126th spectrum channel;
F127---the 127th spectrum channel;
F128---the 128th spectrum channel;
1---high-aspect-ratio InGaAs alignment photosensor chip;
2---sensing circuit;
3---transition electrode plate;
4---temperature detecting resistance;
5---semiconductor cooler;
6---multi-channel digital optical splitter;
7---window;
8---Can;
9---cover plate.
Embodiment
Below in conjunction with accompanying drawing, enforcement of the present invention is further described.
Embodiment one:
The present embodiment is 128 × 1 short-wave infrared hyperchannel integration spectrum assemblies.
Shown in Fig. 1, photosensitive first length breadth ratio of back illumination InGaAs alignment chip is 10:1, p1 and p2 centre distance 50 μm, photosensitive first length 500 μm, and chip-scale is 256 × 1, and spectral response range is 0.9 μm ~ 1.7 μm.The sensing circuit 2 of the InGaAs alignment chip 1 of 1 256 × 1 and 1 256 × 1 scale is interconnected by the inverse bonding of In post, forms 256 × 1 back illumination focal plane modules.
Shown in Fig. 2, multi-channel digital optical splitter 6 is the short-wave infrared optical splitter of 128 × 1 passages, on the sapphire sheet substrate of 300 μm ~ 500 μm of thickness, in the spectral range of 0.9 μm ~ 1.7 μm, discontinuously arranged 128 spectrum channels, the centre distance of f1 and f2 is 100 μm, the bandwidth of each spectrum channel is 3nm, transmitance is 50% ~ 60%, spectral noise in single passage is less than 1%, interchannel cross-talk is less than 1%, is dividing the optical thin film that short infrared wave band transmitance is less than 0.1% of the area deposition beyond optical channel.
Shown in Fig. 3, in Can 8, adopt silver slurry welding semiconductor cooler 5,120 DEG C of hot settings 6 ~ 8 hours, then epoxy glue glueds joint transition electrode plate 3,60 DEG C solidification 12 ~ 18 hours.On transition electrode plate 3, adopt epoxy glue to glued joint temperature detecting resistance 4, centered assembling back illumination 256 × 1 focal plane module, sensing circuit 2 and transition electrode plate 3 adopt the Si/Al silk of Ф 25 μm ~ Ф 50 μm to carry out electricity by ultrasonic wedge bonding to be connected.Under 50 times of high-accuracy projectors, the digital optical splitter 6 of 128 × 1 passage is aimed at 256 × 1 back illumination InGaAs alignment chips 1 and assembles, fringe region beyond spectrum channel carries out indium metal weldering, the corresponding photosensitive unit of p1, p2 of f1 passage, the corresponding photosensitive unit of p3, p4 of f2 passage, the like, the corresponding photosensitive unit of p255, p256 of f128 passage.Transition electrode plate 3 and the pin of Can 8, adopt the Si/Al silk of Ф 25 μm ~ Ф 50 μm to carry out electricity connection by ultrasonic wedge bonding.Fringe region and cover plate 9 tapping of window 7 carry out indium metal weldering, and cover plate 9 and Can 8 are sealed by the mode of parallel seam welding.
Embodiment two:
The present embodiment is 128 × 1 short-wave infrared hyperchannel integration spectrum assemblies.
Shown in Fig. 1, photosensitive first length breadth ratio of back illumination InGaAs alignment chip is 20:1, p1 and p2 centre distance 50 μm, photosensitive first length 1000 μm, and chip-scale is 256 × 1, and spectral response range is 0.9 μm ~ 1.7 μm.The sensing circuit 2 of the InGaAs alignment chip 1 of 1 256 × 1 and 1 256 × 1 scale is interconnected by the inverse bonding of In post, forms 256 × 1 back illumination focal plane modules.
Shown in Fig. 2, multi-channel digital optical splitter 6 is the short-wave infrared optical splitter of 128 × 1 passages, on the sapphire sheet substrate of 300 μm ~ 500 μm of thickness, in the spectral range of 0.9 μm ~ 1.7 μm, discontinuously arranged 128 spectrum channels, the centre distance of f1 and f2 is 100 μm, the bandwidth of each spectrum channel is 3nm, transmitance is 50% ~ 60%, spectral noise in single passage is less than 1%, interchannel cross-talk is less than 1%, is dividing the optical thin film that short infrared wave band transmitance is less than 0.1% of the area deposition beyond optical channel.
Shown in Fig. 3, in Can 8, adopt silver slurry welding semiconductor cooler 5,120 DEG C of hot settings 6 ~ 8 hours, then epoxy glue glueds joint transition electrode plate 3,60 DEG C solidification 12 ~ 18 hours.On transition electrode plate 3, adopt epoxy glue to glued joint temperature detecting resistance 4, centered assembling back illumination 256 × 1 focal plane module, sensing circuit 2 and transition electrode plate 3 adopt the Si/Al silk of Ф 25 μm ~ Ф 50 μm to carry out electricity by ultrasonic wedge bonding to be connected.Under 50 times of high-accuracy projectors, the digital optical splitter 6 of 128 × 1 passage is aimed at 256 × 1 back illumination InGaAs alignment chips 1 and assembles, fringe region beyond spectrum channel carries out indium metal weldering, the corresponding photosensitive unit of p1, p2 of f1 passage, the corresponding photosensitive unit of p3, p4 of f2 passage, the like, the corresponding photosensitive unit of p255, p256 of f128 passage.Transition electrode plate 3 and the pin of Can 8, adopt the Si/Al silk of Ф 25 μm ~ Ф 50 μm to carry out electricity connection by ultrasonic wedge bonding.Fringe region and cover plate 9 tapping of window 7 carry out indium metal weldering, and cover plate 9 and Can 8 are sealed by the mode of parallel seam welding.
Claims (3)
1. a short-wave infrared hyperchannel integration spectrum assembly, comprise high-aspect-ratio InGaAs alignment photosensor chip (1), sensing circuit (2), transition electrode plate (3), temperature detecting resistance (4), semiconductor cooler (5), multi-channel digital optical splitter (6), window (7), Can (8) and cover plate (9), it is characterized in that:
Described multi-channel digital optical splitter (6) is as the beam splitter of micro spectrometer, welded by metallizing edges, directly be coupled with high-aspect-ratio InGaAs alignment photosensor chip (1), be integrated in short-wave infrared hyperchannel integration spectrum assembly.
2. a kind of short-wave infrared hyperchannel integration spectrum assembly according to claim 1, is characterized in that: the photosensitive unit of described high-aspect-ratio InGaAs alignment photosensor chip (1) is rectangle structure, and length breadth ratio is 10:1 or 20:1.
3. a kind of short-wave infrared hyperchannel integration spectrum assembly according to claim 1, it is characterized in that: described multi-channel digital optical splitter (6) is a monolithic hyperchannel short-wave infrared optical filter, spectrum channel number is 64, 128 or 256, the spectrum continuous uniform distribution or discontinuously arranged of each passage, spectral bandwidth 2nm ~ the 5nm of each passage, centre wavelength positioning precision ± 1nm, transmitance >=50%, spectral noise in single passage is less than 1%, interchannel cross-talk is less than 1%, the optical thin film that area deposition short infrared wave band transmitance beyond point optical channel is less than 0.1%.
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CN201510416712.6A CN105021278A (en) | 2015-07-16 | 2015-07-16 | Short wave infrared multichannel integrated spectral assembly |
CN201520978955.4U CN205246212U (en) | 2015-07-16 | 2015-12-01 | Integrated spectrum subassembly of infrared multichannel of shortwave |
CN201510864335.2A CN105371951B (en) | 2015-07-16 | 2015-12-01 | A kind of short-wave infrared multichannel integration spectrum component |
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CN201510864335.2A Active CN105371951B (en) | 2015-07-16 | 2015-12-01 | A kind of short-wave infrared multichannel integration spectrum component |
CN201520978955.4U Expired - Fee Related CN205246212U (en) | 2015-07-16 | 2015-12-01 | Integrated spectrum subassembly of infrared multichannel of shortwave |
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CN201520978955.4U Expired - Fee Related CN205246212U (en) | 2015-07-16 | 2015-12-01 | Integrated spectrum subassembly of infrared multichannel of shortwave |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107290053A (en) * | 2017-05-27 | 2017-10-24 | 中国科学院上海技术物理研究所 | Miniature long wave near-infrared Internet of things node based on linear variable filter |
CN110855899A (en) * | 2019-10-18 | 2020-02-28 | 山东大学 | High dynamic range imaging method of InGaAs short wave infrared camera based on correlated double sampling |
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CN105021278A (en) * | 2015-07-16 | 2015-11-04 | 中国科学院上海技术物理研究所 | Short wave infrared multichannel integrated spectral assembly |
CN105572880B (en) * | 2016-03-23 | 2018-08-28 | 山东大学 | A kind of incident optical system and its working method near infrared spectrum sensing node |
CN106449548A (en) * | 2016-10-28 | 2017-02-22 | 中国电子科技集团公司第四十四研究所 | Mini type packaging structure for electronic multiplying charge-coupled device |
CN107888810B (en) * | 2017-11-13 | 2024-03-01 | 合肥美亚光电技术股份有限公司 | InGaAs infrared camera and control method |
CN108169807B (en) * | 2017-12-27 | 2019-08-02 | 长光卫星技术有限公司 | A kind of integrated form short-wave infrared optical imaging system |
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US10859436B2 (en) * | 2019-02-19 | 2020-12-08 | Renesas Electronics America Inc. | Spectrometer on a chip |
CN112556847A (en) * | 2020-11-27 | 2021-03-26 | 云南昆物新跃光电科技有限公司 | InGaAs multi-line photosensitive chip and application thereof |
CN113419289A (en) * | 2021-05-13 | 2021-09-21 | 中国电子科技集团公司第十一研究所 | Method for mounting multi-spectral filter for infrared detector and infrared detector |
CN114242711A (en) * | 2021-12-17 | 2022-03-25 | 电子科技大学 | Preparation process of hyperspectral photoelectric detector |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20040110071A (en) * | 2002-04-23 | 2004-12-29 | 히로무 마에다 | Small packaged spectroscopic sensor unit |
CN1193213C (en) * | 2002-05-13 | 2005-03-16 | 重庆大学 | Integrated miniature spectrometer |
US7167249B1 (en) * | 2003-11-25 | 2007-01-23 | Kestrel Corporation | High efficiency spectral imager |
CN101871816B (en) * | 2010-06-03 | 2012-02-29 | 北京航空航天大学 | Modularized split Sagnac interferometer |
CN103500749B (en) * | 2013-10-10 | 2016-09-28 | 中国科学院上海技术物理研究所 | A kind of super long alignment InGaAs detector encapsulating structure of thermoelectric cooling |
CN105021278A (en) * | 2015-07-16 | 2015-11-04 | 中国科学院上海技术物理研究所 | Short wave infrared multichannel integrated spectral assembly |
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2015
- 2015-07-16 CN CN201510416712.6A patent/CN105021278A/en active Pending
- 2015-12-01 CN CN201510864335.2A patent/CN105371951B/en active Active
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107290053A (en) * | 2017-05-27 | 2017-10-24 | 中国科学院上海技术物理研究所 | Miniature long wave near-infrared Internet of things node based on linear variable filter |
CN110855899A (en) * | 2019-10-18 | 2020-02-28 | 山东大学 | High dynamic range imaging method of InGaAs short wave infrared camera based on correlated double sampling |
CN110855899B (en) * | 2019-10-18 | 2021-01-01 | 山东大学 | High dynamic range imaging method of InGaAs short wave infrared camera based on correlated double sampling |
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CN105371951B (en) | 2018-10-23 |
CN105371951A (en) | 2016-03-02 |
CN205246212U (en) | 2016-05-18 |
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Application publication date: 20151104 |