CN104236714A - Spectrum sensor for detecting strength of target waveband - Google Patents
Spectrum sensor for detecting strength of target waveband Download PDFInfo
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- CN104236714A CN104236714A CN201310226260.6A CN201310226260A CN104236714A CN 104236714 A CN104236714 A CN 104236714A CN 201310226260 A CN201310226260 A CN 201310226260A CN 104236714 A CN104236714 A CN 104236714A
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Abstract
The invention relates to a spectrum sensor for detecting strength of a target waveband, which comprises the components of: a waveband selecting module, a photoelectric sensing module, an electric signal processing module, a packaging protector, a bracket and a connecting line. The waveband selecting module is arranged at the incident light side. The photoelectric sensing module is arranged at emergent light side of the waveband selecting module. The electric signal processing module is electrically connected with the photoelectric sensing module. The waveband selecting module, the photoelectric sensing module and the electric signal processing module are assembled together through a semiconductor packaging process for forming an independent photoelectric device. The spectrum sensor is convenient in measuring spectrum strength in a target waveband range and has relatively high selectivity and sensitivity. The spectrum sensor can be used for quick measurement for light source characteristic spectrum and matter property analysis. The spectrum sensor has advantages of: small volume, high integration degree, relatively high reliability, simple structure, flexible configuration and wide application range.
Description
Technical field
The present invention relates to photoelectric technology, be specifically related to spectrum sensor technology, particularly detect the intensity of special spectrum wavelength coverage in visible spectrum.This device, for measuring object wave segment limit spectral intensity, has higher selectivity and sensitivity, can be used for illuminant characterization optical spectrum rapid measuring and physical property analysis.
Background technology
Be that the luminous lighting engineering as light source of new generation of semiconductor of representative receives national governments and concern among the people day by day with LED.Compare traditional light source, semiconductor light sources significantly can reduce energy consumption, can reduce again the environmental pollution that in traditional energy-saving lamp, the objectionable impurities such as mercury is brought.Along with implementing of national governments' green illumination policy is reduced with perfect the brought cost of semiconductor lighting industrial chain, semiconductor will more be applied and be paid close attention in the various occasion of light source that needs as light source of new generation.Semiconductor light sources energy-conserving and environment-protective advantage is paid close attention to while replacing conventional light source people, but to another characteristic of semiconductor light sources fewer study: semiconductor light sources has very narrow spectral distribution, it is the light source that in human history, color characteristics is the purest in addition to laser, usually its peak width at half height (Full-Width Half-Maxium, be called for short FWHM, namely in spectral wavelength intensity distribution, spectral intensity is equivalent to the whole width of spectral wavelength corresponding to maximal value half place) be less than 20nm, there is extremely strong monochromaticity.This monochromaticity is that the application that exploitation semiconductor light sources is new provides possibility.But its spectral response scope of current photodetector is all wider, common spectral analysis is all through laboratory profession equipment and professional and technical personnel just can complete, and wastes time and energy.Therefore develop a kind of can simply and easily for the spectral detector of the stronger light source of this monochromaticity, namely meet and be applied to the photodetector that semiconductor light emitting has a narrower spectral response and can provide basis for research and development light emitting semiconductor device new opplication.For distinguishing traditional wide spectrum respective range photoelectric sensor, being called for short this photoelectric sensor with narrowband response with spectrum sensor below and being distinguished.
The present invention, on research semiconductor light sources characteristic basis, in conjunction with optics and semiconductor transducer manufacturing technology, has invented the spectrum sensing device with narrow spectral response.
Summary of the invention
The object of this invention is to provide a kind of spectrum sensor of detection of a target band strength, for detection of a target band strength, so that user understands this target wave band component in residing environment in time, to provide information for subsequent device and process.
In order to achieve the above object, the present invention has following technical scheme:
The spectrum sensor of a kind of detection of a target band strength of the present invention, comprises band selection module, photoelectric sensing module, electronic signal processing module, encapsulation protection mechanism, support and connecting line;
The object wave segment limit that band selection module is used for measuring chooses from broadband incident light;
Photoelectric sensing module is used for light signal being converted to electric signal, to measure spectral intensity;
It can be the electric signal that subsequent device uses or identifies that electronic signal processing module is used for the electric signal detected by photoelectric sensing module to convert to;
Electric connection line is by photoelectric sensing module, electronic signal processing module, support electrical connection;
Rack bearing photoelectric sensing module and electronic signal processing module, and electrical signal paths is provided;
Encapsulation protection mechanism for above-mentioned parts the connection of mechanical support, light and electricity or isolation are provided and by isolation and protection by the infringement of adverse factor in environment;
Described band selection module is positioned at the side of incident light, and photoelectric sensing module is positioned at the side of band selection module emergent light, and electronic signal processing module is electrically connected with photoelectric sensing module.
Wherein, described band selection module comprises photonic crystal, optical band pass filter, crystal monochromator, grating monochromator or rib grid monochromator.
Wherein, described photonic crystal is one dimension or two-dimensional structure, and photonic crystal allows the optical wavelength passed through to be in described target wave band.
Wherein, described optical band pass filter is some layer film structure that the different bi-material of refraction coefficient is formed, and makes some layer film structure allow the optical wavelength range passed through to be in described object wave segment limit by regulating film thickness.Described membrane structure is formed, as SiO by transparent dielectric material
2and TiO
2; Described transparent dielectric material forms film alternate each other or spatial structure, and the distance between film or spatial structure adjusts along with the change of described target wave band.
Wherein, described optical band pass filter allows the spectrum peak width at half height wavelength coverage passed through to be not more than the wavelength coverage of described target wave band.
Wherein, the material characteristics that described photoelectric sensing module uses is that its electrical quantity such as resistance, electric current, voltage, electric capacity, inductance can change along with the change of light signal strength.
Wherein, described photoelectric sensing module comprises photodiode, phototriode, photoresistance, photomultiplier cell, photoelectric cell, CMOS, CCD or charge injection sensor.Described photoelectric sensing module adopts integrated circuit technology to be processed into photoelectric device.Integrated circuit technology described here is by process combination such as photoetching, film, etching, ion implantation, diffusions, and the production technology that several have the semiconductor devices of certain function produced by a block semiconductor material simultaneously.
Wherein, described photoelectric sensing module comprises simple substance base semiconductor photoelectric sensor or compound base photoelectric sensor.Simple substance base semiconductor is as Si, Ge photoelectric sensor, and compound base semiconductor is as GaAs, CdS, GaN photoelectric sensor.
Wherein, described photoelectric sensing module is the silicon-based semiconductor photoelectric device that integrated circuit technology is produced, and in this silicon-based semiconductor photoelectric device, the thickness of opto-electronic conversion active layer is 0.2um-3um.Described photoelectric sensing module activity layer by adulterate or the semiconductor of intrinsic form, its concentration and thickness adjust with the absorption in the material of described target wave band centre wavelength, to improve the electricity conversion of device, reduce the impact of spurious signal.
Wherein, described band selection module, photoelectric sensing module, electronic signal processing module are packaged together by semiconductor photoelectric device packaging technology, form the photoelectric device of independent integers.Semiconductor packaging process is fixed together by related device by the technological process such as thinning, scribing, expansion crystalline substance, die bond, routing, encapsulating, and realize connection or the isolation of photoelectricity.
Wherein, for strengthening target wave band spectral signal intensity, the signal noise ratio of further raising spectrum sensor, one or one group of one-time formed integrated convex lens in potting process are added in described band selection module incident light direction, or discrete convex lens, to allow more ray cast in the active region of photoelectric sensing module, these lens can be one-time formed integral lens in potting process, also discrete lens can be adopted and by semiconductor optoelectronic packaging technology and band selection module, photoelectric sensing module, electronic signal processing module, encapsulation protection mechanism, support, connecting line is packaged together, form the photoelectric device of independent integers.
Wherein, described packaging protection mechanism has the transparent window of described target wave band; the open circles cylindricality that preshaped pottery or metal material can be adopted to form or square structure, also can adopt the encapsulating structure of the disposal integral molding in packaging technology such as transparent resin, plastics, silica gel.
Wherein, described support is made up of foil material, and some the grooves be provided with on this sheet metal for being electrically connected or projection, in packaging technology, provide machinery support to photoelectric sensing module, and form the electrical connection with photoelectric sensing module by connecting line.
Owing to taking above technical scheme, the present invention has the following advantages:
1) the present invention adopts band selection module can obtain target wave band spectral signal simply.
2) the present invention adopts photonic crystal or bandpass filter to realize band selection function, reduces the spatial volume of device, improves the selectivity to spectral bandwidth, adds by the transmitance selecting spectrum.
3) the present invention adopts the photoelectric sensing module through optimizing PN junction depth, improves sensitivity and the selectivity of device photoelectric conversion, reduces the noise of device.
4) photoelectric sensor that the present invention adopts semiconductor integrated circuit technique to produce can make device be easy to realize miniaturization as photoelectric sensing module.
5) band selection module, photoelectric sensing module, electronic signal processing module are packaged together by spectrum sensor of the present invention, and volume is little, structure is simple, flexible configuration, wide accommodation.
Accompanying drawing explanation
Fig. 1: block diagram of the present invention;
Fig. 2: structural drawing of the present invention and embodiment one;
Fig. 3: band selection modular structure schematic diagram.
Fig. 4: photoelectric sensing modular structure schematic diagram.
Fig. 5: the embodiment of the present invention two
Fig. 6: the embodiment of the present invention three
In figure: 1 band selection module; 2 photoelectric sensing modules; 3 electronic signal processing module; 4 electric connection lines; 5 supports; 6 encapsulation protection; 7 convex lens; 11 transparent substrates; 12 high refraction TiO
2film; 13 low refraction SiO
2film; The 14 low refraction in center SiO
2film; 21N district; 22P district; 23 epitaxial loayers; 24Si substrate.
Embodiment
The photoelectric sensing module that the present invention produces with regard to based single crystal silicon integrated circuit production technology and multilayer film bandpass filter illustrate embodiments of the present invention as the spectrum sensor of band selection module.
Be illustrated in figure 2 the spectrum sensor of the single band strength of detection of the present invention, comprise one group of band selection module, one group of photoelectric sensing module, electronic signal processing module and encapsulation protection mechanism, support and connecting line, described band selection module is positioned at the side of incident light, one group of photoelectric sensing module is positioned at the side of band selection module emergent light, and electronic signal processing module is electrically connected with photoelectric sensing module; Optical-electric module, electronic signal processing module and support are electrically connected by electric connection line; Rack bearing photoelectric sensing module and electronic signal processing module, and electrical signal paths is provided; Encapsulation protection mechanism for all parts machinery support, the connection of light and electricity and isolation are provided and by isolation and protection by the infringement of adverse factor in environment.
Band selection module will the target wave band detected be needed to choose from incident light, band selection module can adopt but be not limited to following several form: photonic crystal, Fabry-Perot bandpass filter, the common wavelength band of such as blue light is at about 450nm, this module effect is exactly by the optical electivity of the object wave segment limit of 450nm out, and projection is to photoelectric sensing module.As adopted photonic crystal as band selection module, the centre wavelength of the photonic crystal bandwidth of two kinds of different refractivity material arrangement formations is 450nm; As adopted Fabry-Perot bandpass filter as band selection module, its thickness of multilayer film and central mode thickness are adjusted to and allow centre wavelength to be that 450nm light passes through.In order to improve resolution and selectivity, be no more than 30nm by the peak width at half height of band selection module wave spectrum.One typical in TiO
2material and SiO
2the bandpass filter of material composition, as shown in Figure 3, in described target wave band transparent substrates, high refraction TiO
2film and low refraction SiO
2film is symmetrically arranged amongst the low refraction in a center SiO with same thickness respectively successively
2film both sides, composition bandpass filter.
Photoelectric sensing module utilizes photoelectric effect that light signal is converted to electric signal electron device, alternative photoelectric sensing module has following but is not limited to following several: photodiode, phototriode, photoresistance, photomultiplier cell, photoelectric cell, CMOS, CCD or charge injection sensor CID(Charge Injection Device).For improving photoelectric transformation efficiency and signal to noise ratio (S/N ratio), photoelectric sensing module activity layer, namely the junction depth of PN junction suitably adjusts with the centre wavelength of described target band spectrum and the factor such as semiconductor material, production technology.To the spectrum of short 450nm scope, photoelectric sensing module PN junction depth is adjusted to about 0.2um, and to the spectrum of long wavelength about 700nm, the junction depth of its PN junction can be arranged on about 3um, is beneficial to abundant absorption and the conversion of light wave.Typical photoelectric sensing module as shown in Figure 4.
Electronic signal processing module is converted to by photoelectric sensing module electric signal out further by after the electric signal of follow up device process or use, and can be sent to follow up device by wired or wireless mode by circuit again.Electronic signal processing module usually realizes but is not limited to following functions: signals collecting, amplification, anti-phase, analog to digital conversion, comparer, interface, signal madulation and wireless transmit.Electronic signal processing module is produced into integration module by integrated circuit production technology and photoelectric sensing module simultaneously, also separately can be produced into standalone module.
Its locus in band selection module by photoelectric sensing module and electronic signal processing module being placed on support, and is fixed by encapsulation by packaging technology.Electric signal is drawn by electric connection line.
Lens and above-mentioned spectrum sensor can be packaged together by packaging technology.Described lens can be by one-time formed together with transparent protection mechanism with encapsulating process in potting process, also can be independently assemblies.More light can be focused on the window of photoelectric conversion module by convex lens, to increase target band spectrum degree, can improve the signal noise ratio of spectrum sensor, sensitivity and detection limit.
Each module number in the present invention carries out flexible configuration as required.Such as want the intensity of the multiple wave band of Simultaneously test, multiple band selector and corresponding photoelectric sensing module can be configured.
Embodiment one
Fig. 2 spectrum sensor of the present invention is used for the detection of single band strength.The present embodiment is a band selection module and photoelectric sensing module.Band selection module adopts bandpass filter, and the light of this bandpass filter to 440-470nm scope has stronger passing through, and reaches more than 95%, then f hardlyes pass through other wave band.Spectrum 440-470nm scope is selected to be one section of wave spectrum usually the strongest in the comparatively responsive and LED white light parts of human body.Such LED white light, by after this band selection module, only leaves the light wave of 440-470nm scope.What be so positioned at that the photoelectric sensor of position immediately below it detects is exactly this scope light wave spectral intensity.Electronic signal processing module realizes the acquisition function of electric signal.
Embodiment two
Fig. 5 is the spectrum sensor of the height integrated multi-band phase strength investigation that the present invention adopts integrated circuit production technology to make.Three groups of band selection modules adopt centre wavelength in 450nm, 540nm, 700nm bandpass filter respectively, and the photoelectric sensing module be positioned at immediately below three groups of band selection modules measures band strength near these three centre wavelengths respectively.Wherein, photoelectric sensor adopts integrated circuit production technology to produce, be made up of three passages and be integrated on same chip, the PN junction depth of three passages is optimized to 0.3um, 1um and 3um according to its corresponding determined wavelength, adopts effective optical, electrical isolation between three passages.Electronic signal processing module is also integrated on same silicon chip, completes electric signal and collects and processing capacity, and further process is treated in the output of these strength signals.In packaging technology, the bandpass filter that three passages are corresponding respective in locus respectively, also by optical, electrical isolation between each passage.
Embodiment three
Fig. 6 is the lensed spectrum sensor of assembling.The packed technique of convex lens is placed in the top in band selector incident light direction, and its focus is positioned within photodetector unit window.By the configuration of this lens, enhance the intensity of the target optical spectrum being incident upon photodetector unit, the signal noise ratio of whole spectrum sensor, the performance such as sensitivity and detection limit are all along with improve.
As can be seen from the explanation of apparatus and method of the present invention and example, the invention provides the device measuring spectral intensity based on band selection module and photoelectric detection module, this method and device have simply, flexibly, and the features such as applied range.But more than illustrate and can not limit the enforceable scope of the present invention, the obvious or unconspicuous change that every professional person does on basis of the present invention, modify or improvement, all should be considered as not departing from Spirit Essence of the present invention.
Claims (10)
1. a spectrum sensor for detection of a target band strength, is characterized in that: comprise band selection module, photoelectric sensing module, electronic signal processing module, encapsulation protection mechanism, support and connecting line;
The object wave segment limit that band selection module is used for measuring chooses from broadband incident light;
Photoelectric sensing module is used for light signal being converted to electric signal, to measure spectral intensity;
It can be the electric signal that subsequent device uses or identifies that electronic signal processing module is used for the electric signal detected by photoelectric sensing module to convert to;
Electric connection line is by photoelectric sensing module, electronic signal processing module, support electrical connection;
Rack bearing photoelectric sensing module and electronic signal processing module, and electrical signal paths is provided;
Encapsulation protection mechanism provides the connection of mechanical support, light and electricity and isolation for above-mentioned parts and makes above-mentioned parts not by the infringement of adverse factor in environment by isolation and protection;
Described band selection module is positioned at the side of incident light, and photoelectric sensing module is positioned at the side of band selection module emergent light, and electronic signal processing module is electrically connected with photoelectric sensing module.
2. the spectrum sensor of a kind of detection of a target band strength as claimed in claim 1, is characterized in that: described band selection module comprises photonic crystal, optical band pass filter, crystal monochromator, grating monochromator or rib grid monochromator.
3. the spectrum sensor of a kind of detection of a target band strength as claimed in claim 2, is characterized in that: described photonic crystal is one dimension or two-dimensional structure, photonic crystal allows the optical wavelength passed through to be in described target wave band.
4. the spectrum sensor of a kind of detection of a target band strength as claimed in claim 2, it is characterized in that: described optical band pass filter is some layer film structure that the different bi-material of refraction coefficient is formed, making some layer film structure allow the optical wavelength range passed through to be in described object wave segment limit by regulating film thickness.
5. the spectrum sensor of a kind of detection of a target band strength as claimed in claim 2, is characterized in that: described optical band pass filter allows the spectrum peak width at half height wavelength coverage passed through to be not more than the wavelength coverage of described target wave band.
6. the spectrum sensor of a kind of detection of a target band strength as claimed in claim 1, is characterized in that: described photoelectric sensing module comprises photodiode, phototriode, photoresistance, photomultiplier cell, photoelectric cell, CMOS, CCD or charge injection sensor.
7. the spectrum sensor of a kind of detection of a target band strength as claimed in claim 1, is characterized in that: described photoelectric sensing module comprises simple substance base semiconductor photoelectric sensor or compound base photoelectric sensor.
8. the spectrum sensor of a kind of detection of a target band strength as claimed in claim 1, it is characterized in that: described photoelectric sensing module is the silicon-based semiconductor photoelectric device that integrated circuit technology is produced, and in this silicon-based semiconductor photoelectric device, opto-electronic conversion active layer thickness is 0.2um-3um.
9. the spectrum sensor of a kind of detection of a target band strength as claimed in claim 1, it is characterized in that: described band selection module, photoelectric sensing module, electronic signal processing module are packaged together by semiconductor photoelectric device packaging technology, form the photoelectric device of independent integers.
10. the spectrum sensor of a kind of detection of a target band strength as claimed in claim 1, it is characterized in that: one or one group of one-time formed integrated convex lens in potting process are added in described band selection module incident light direction, or discrete convex lens, and be packaged together by semiconductor optoelectronic packaging technology and band selection module, photoelectric sensing module, electronic signal processing module, encapsulation protection mechanism, support, connecting line, form the photoelectric device of independent integers.
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| CN104236714B CN104236714B (en) | 2016-06-08 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106153194A (en) * | 2015-04-07 | 2016-11-23 | 刘红超 | A kind of spectrum sensing device detecting target band strength |
| CN110672207A (en) * | 2019-11-04 | 2020-01-10 | 中国电子科技集团公司第四十四研究所 | Micro spectrometer based on multi-pixel sensor integrated on optical filter |
| CN114279565A (en) * | 2021-12-29 | 2022-04-05 | 烟台睿创微纳技术股份有限公司 | Non-refrigeration infrared spectrum chip, preparation method thereof and infrared spectrometer |
| CN114295207A (en) * | 2021-12-29 | 2022-04-08 | 烟台睿创微纳技术股份有限公司 | Uncooled hyperspectral imaging chip and hyperspectral imager |
| CN114323276A (en) * | 2021-12-29 | 2022-04-12 | 烟台睿创微纳技术股份有限公司 | Uncooled hyperspectral imaging chip and hyperspectral imager |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1768436A (en) * | 2003-04-08 | 2006-05-03 | 3M创新有限公司 | Visible wavelength detector systems and filters therefor |
| CN101059594A (en) * | 2006-04-21 | 2007-10-24 | Lg伊诺特有限公司 | Camera module and mobile station having the same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106153194A (en) * | 2015-04-07 | 2016-11-23 | 刘红超 | A kind of spectrum sensing device detecting target band strength |
| CN110672207A (en) * | 2019-11-04 | 2020-01-10 | 中国电子科技集团公司第四十四研究所 | Micro spectrometer based on multi-pixel sensor integrated on optical filter |
| CN114279565A (en) * | 2021-12-29 | 2022-04-05 | 烟台睿创微纳技术股份有限公司 | Non-refrigeration infrared spectrum chip, preparation method thereof and infrared spectrometer |
| CN114295207A (en) * | 2021-12-29 | 2022-04-08 | 烟台睿创微纳技术股份有限公司 | Uncooled hyperspectral imaging chip and hyperspectral imager |
| CN114323276A (en) * | 2021-12-29 | 2022-04-12 | 烟台睿创微纳技术股份有限公司 | Uncooled hyperspectral imaging chip and hyperspectral imager |
| CN114323276B (en) * | 2021-12-29 | 2024-03-26 | 烟台睿创微纳技术股份有限公司 | Uncooled hyperspectral imaging chip and hyperspectral imager |
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