CN110672207A - Micro spectrometer based on multi-pixel sensor integrated on optical filter - Google Patents
Micro spectrometer based on multi-pixel sensor integrated on optical filter Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 77
- 238000001228 spectrum Methods 0.000 claims abstract description 20
- 238000001514 detection method Methods 0.000 claims abstract description 16
- 238000012360 testing method Methods 0.000 claims abstract description 8
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- 238000003466 welding Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 14
- 230000003595 spectral effect Effects 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 210000001747 pupil Anatomy 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 230000000295 complement effect Effects 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000012937 correction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2823—Imaging spectrometer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J2003/1213—Filters in general, e.g. dichroic, band
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2823—Imaging spectrometer
- G01J2003/2826—Multispectral imaging, e.g. filter imaging
Abstract
The invention provides a micro spectrometer based on an integrated multi-pixel sensor on an optical filter chip and a preparation method thereof, wherein the spectrometer comprises a condensing lens and a tube shell, the base of the tube shell is provided with the integrated multi-pixel sensor on the optical filter chip, the surface of each pixel of the integrated multi-pixel sensor on the optical filter chip is integrated with a specific optical filter, pixels at different positions are used for detecting incident light at different wave bands, the specific position of the integrated multi-pixel sensor on the optical filter chip is provided with a space light intensity calibration pixel used for correcting spectrum test deviation caused by different positions, the spectrometer simultaneously realizes light splitting and detection of a spectrum on a single chip, does not need structural components such as a diffraction grating or a tuning cavity and the like to assist light splitting, and has the advantages of high spectrum scanning speed, small volume, simple optical system and low cost.
Description
Technical Field
The invention relates to photoelectric detection, in particular to a micro spectrometer based on an integrated multi-pixel sensor on a filter chip and a preparation method thereof.
Background
The micro spectrometer can detect and identify the spectrum fingerprint of an object, and can be widely applied to the fields of environmental monitoring, industrial control, chemical analysis, food quality detection, material analysis and the like.
According to the spectral light splitting mode, the traditional micro spectrometer is mainly divided into a diffraction grating type and a Micro Electro Mechanical System (MEMS) tuning cavity type. The former needs to prepare a diffraction grating with the characteristic dimension of hundreds of nanometers, and simultaneously needs high-precision alignment of the grating and the detector array, so that the defects of large volume, high assembly requirement of an optical system, high manufacturing cost and the like exist; the latter divides light in a time-sharing way through the electric drive MEMS cavity length change, and has the defects of slow spectrum scanning speed, poor shock resistance, poor temperature adaptability, short service life and the like.
Disclosure of Invention
The invention aims at solving the problems, provides a micro spectrometer based on an integrated multi-pixel sensor on an optical filter and a preparation method thereof, and aims at the defects of larger volume, high assembly requirement of an optical system, high manufacturing cost or slow spectrum scanning speed, poor shock resistance, poor temperature adaptability, short service life and the like of the traditional diffraction grating type and MEMS type micro spectrometers; the optical filter integrates the optical signals of different spectral bands detected by the pixels of the multi-pixel sensor in different spaces, and has the advantage of high spectral scanning speed; the single chip is integrated, has no movable structure, and has the advantages of high reliability, good compatibility with silicon process, low cost and the like.
According to one aspect of the invention, a micro spectrometer based on an integrated multi-pixel sensor on a filter chip is provided, which comprises a condenser lens and a tube shell for fixing the condenser lens, wherein the tube shell consists of a base and a tube cap, a pressure welding point is arranged on the surface of the base close to the condenser lens, a pin is arranged on the surface of the base far away from the condenser lens, the pressure welding point is communicated with the pin through wiring in the base,
the surface of the base, which is close to the side of the condensing lens, is provided with an integrated multi-pixel sensor on the optical filter, the integrated multi-pixel sensor on the optical filter is bonded with the base through a surface mounting process, and a pressure welding point of the integrated multi-pixel sensor on the optical filter is connected with a corresponding pressure welding point on the base through a metal wire through a bonding process;
the surface of each pixel element of the multi-pixel sensor integrated on the optical filter is integrated with a specific optical filter, the pixel elements at different positions are used for detecting incident light with different wave bands, and the specific position of the multi-pixel sensor integrated on the optical filter is also provided with a spatial light intensity calibration pixel for correcting spectrum test deviation caused by different positions.
According to another aspect of the present invention, there is provided a method for preparing a micro spectrometer based on an integrated multi-pixel sensor on a filter, the method comprising the steps of:
and 4, connecting the corresponding positions of the integrated multi-pixel sensor pressure welding points on the optical filter and the pressure welding points of the tube shell base by adopting a metal wire bonding process, and realizing interconnection with the driving circuit and the peripheral signal processing circuit through the pins.
The invention has the advantages that the multi-pixel sensor is integrated on the optical filter, the light splitting and the detection of the spectrum are realized on the single chip at the same time, structural components such as a diffraction grating or an MEMS tuning cavity and the like are not needed for assisting the light splitting, and compared with the diffraction grating type, the multi-pixel sensor has the advantages of small volume, low requirement on an optical system, simple assembly and low cost; the optical filter integrates each pixel of the multi-pixel sensor to detect optical signals of different spectral bands at the same time in different spaces, and has the advantage of higher spectral scanning speed compared with an MEMS type; the single chip integration, no movable structure, and has the advantages of high reliability, good compatibility with silicon process, low cost, etc. compared with the MEMS type.
Drawings
FIG. 1 is a schematic structural diagram of a micro spectrometer based on an integrated multi-pixel sensor on a filter chip according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of an integrated multi-pixel sensor on a filter according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of pixel distribution of an integrated multi-pixel sensor on a filter according to an embodiment of the present invention;
fig. 4 is a flowchart of a method for manufacturing a micro spectrometer based on an integrated multi-pixel sensor on a filter chip according to an embodiment of the present invention.
Detailed Description
The following description of specific embodiments of the present invention is provided to further illustrate the starting points and corresponding technical solutions of the present invention.
Fig. 1 is a schematic structural diagram of a micro spectrometer based on an integrated multi-pixel sensor on a filter chip according to an embodiment of the present invention. The micro spectrometer comprises a condensing lens and a tube shell for fixing the condensing lens, wherein the tube shell consists of a base and a tube cap, a pressure welding point is arranged on the surface of the base close to the side of the condensing lens, a pin is arranged on the surface of the base far away from the side of the condensing lens, and the pressure welding point is communicated with the pin through wiring in the base;
the surface of the base, which is close to the side of the condensing lens, is provided with an integrated multi-pixel sensor on the optical filter, the integrated multi-pixel sensor on the optical filter is bonded with the base through a surface mounting process, and a pressure welding point of the integrated multi-pixel sensor on the optical filter is connected with a corresponding pressure welding point on the base through a metal wire through a bonding process;
the surface of each pixel element of the multi-pixel sensor integrated on the optical filter is integrated with a specific optical filter, the pixel elements at different positions are used for detecting incident light with different wave bands, and the specific position of the multi-pixel sensor integrated on the optical filter is provided with a spatial light intensity calibration pixel used for correcting spectrum test deviation caused by different positions.
The components of a micro spectrometer based on a multi-pixel sensor integrated on a filter chip as shown in fig. 1 are further described as follows:
the 1 is a condensing lens which mainly plays a role of condensing incident light and increases the light inlet efficiency of the spectrometer;
2, integrating a multi-pixel sensor on the optical filter, and realizing photoelectric conversion and processing of multispectral information of a target; the bottom layer circuit structure of the integrated multi-pixel sensor on the optical filter except the photosensitive area surface pixel level optical filter is the same as the circuit structure of the conventional complementary metal oxide CMOS image sensor; the difference lies in that a specific filter is integrated on the surface of each pixel element, the pixels at different positions detect incident light with different wave bands, and the pixels for detecting the incident light with different wave bands are called as spectrum detection pixels. In addition, the specific position is provided with a space light intensity calibration pixel, and the surface filtering film structure of each space light intensity calibration pixel is completely the same and is used for correcting the spectrum test deviation caused by different positions and different incident light intensities.
Preferably, the optical filter is made in a stack form using at least two high transmittance materials of titanium oxide TiO2, magnesium fluoride MgF2, aluminum oxide Al2O3, silicon oxide SiO2, hafnium oxide HfO2, including at least one high refractive index material and at least one low refractive index material. For example, a layer of TiO2 and a layer of SiO2, and repeating the above steps to stack 10-100 layers to complete the manufacture of the filter.
Preferably, the circuit structure of the bottom layer of the integrated multi-pixel sensor on the optical filter except the light-sensitive area surface pixel level optical filter is the same as that of the conventional complementary metal oxide CMOS image sensor. Fig. 2 is a circuit diagram of an integrated multi-pixel sensor on a filter according to an embodiment of the invention.
The circuit structure of the integrated multi-pixel sensor on the optical filter is the same as that of a conventional CMOS image sensor, and the integrated multi-pixel sensor mainly comprises a global shutter pixel 9, an analog front end process 10, a column parallel high-precision analog-to-digital conversion 11, an X-direction shift register 12, a low-voltage differential data output interface 13, a Y-direction address selection 14, a logic and drive 15, a serial peripheral interface 16, a bias control 17 and other circuits.
The circuit working principle of the integrated multi-pixel sensor on the optical filter is as follows: when light irradiates the photosensitive surface of the chip, the global shutter pixel 9 converts an optical signal into an electric signal; address selection is realized through Y-direction address selection 14 and logic and drive 15, row selection signals are generated, and electric signals are input to the analog front end processing 10 for relevant double sampling processing; the processed signals are sent to a column parallel high-precision analog-to-digital conversion 11, and analog signals are converted into digital signals; the converted digital signals are sequentially selected by the X-direction shift register 12 and then outputted to the outside of the chip through the low voltage differential data output interface 13 circuit. The entire process is communicated in serial fashion with the peripheral devices by the serial peripheral interface 16 to exchange information, and the bias control 17 provides circuit bias.
Fig. 3 is a schematic diagram of the distribution of pixels of an integrated multi-pixel sensor on a filter according to an embodiment of the present invention. Reference numeral 3 in fig. 3 denotes a pressure welding point of the integrated multi-pixel sensor on the filter, P () and PE () respectively denote a pixel for spectral detection and a pixel for spatial intensity calibration, the parameter in parentheses representing the pixel position. For example, the P (1, 1) generation position is set as a spectrum detection pixel of (1, 1).
Preferably, the spatial light intensity calibration pixels are arranged on the integrated multi-pixel sensor on the optical filter in a periodic arrangement, or in a middle and edge arrangement.
Wherein the pixels periodically set to be, for example, at (2n, 2n) (n is an integer) are the light intensity correction pixels, and the others are the spectrum detection pixels. The setting has the advantages of accurate and simple light intensity correction (the adjacent light intensity correction unit can be used for correction during spectrum detection), and the defect is that the number proportion of the spectrum detection pixels is compressed.
Wherein the middle and edges are arranged such that the picture elements at, for example, the four corners and the center position are arranged as light intensity correction picture elements and the others are spectral detection picture elements. This arrangement has the advantage of a high proportion of spectral detection units, with the disadvantage that the intensity correction may be less accurate.
3, a pressure welding point of the multi-pixel sensor integrated on the optical filter is mainly used for the electrical connection of external input and output;
4, a bonding wire which mainly plays a role of electrical connection;
5. 6, 7 and 8 are respectively a pressure welding point, a base, a tube cap and a base pin of the packaging tube shell, and mainly play a role in protecting and supporting the multi-pixel sensor chip integrated on the optical filter and providing an electrical connection interface with a peripheral circuit. One end of the pipe cap is connected with the base, and the other end of the pipe cap is connected with the condensing lens; the packaging tube shell pressure welding points are positioned on the base and are communicated with the pins through the wiring in the base; the surface of the base, which is close to the side of the condensing lens, is provided with an integrated multi-pixel sensor on the optical filter, the integrated multi-pixel sensor on the optical filter is bonded with the base through a surface mounting process, and the pressure welding points of the integrated multi-pixel sensor on the optical filter are connected with the corresponding pressure welding points on the base through metal wires through a bonding process.
Preferably, the pupil diameter and radius of curvature of the condenser lens, and the size of the envelope are set such that the incident light converging spot is larger than or equal to the size of the photosensitive area of the integrated multi-pixel sensor on the filter.
The specific setting mode is as follows: by adjusting the pupil diameter, the curvature radius and the distance between the pupil diameter and the surface of the photosensitive area of the condenser lens, the incident light converging light spot is ensured to completely fall into the range of the photosensitive area of the integrated multi-pixel sensor on the optical filter (the converging light spot can exceed the range of the photosensitive area). The distance between the condenser lens and the surface of the photosensitive area can be adjusted by the size of the tube shell.
Fig. 4 is a method for manufacturing a micro spectrometer based on an integrated multi-pixel sensor on a filter chip according to an embodiment of the present invention, the method includes the following steps:
step 401, manufacturing an integrated multi-pixel sensor on an optical filter, integrating a specific optical filter on the surface of each pixel of the integrated multi-pixel sensor on the optical filter, wherein the pixels at different positions are used for detecting incident light of different wave bands, and arranging a spatial light intensity calibration pixel for correcting spectral test deviation caused by different positions at the specific position of the integrated multi-pixel sensor on the optical filter;
step 402, manufacturing a condenser lens and a tube shell, fixing the condenser lens on the tube shell, wherein the tube shell comprises a base and a tube cap, a pressure welding point is arranged on the surface of the base close to the side of the condenser lens, a pin is arranged on the surface of the base far away from the side of the condenser lens, and the pressure welding point is communicated with the pin through wiring in the base;
step 403, adhering the multi-pixel sensor integrated on the optical filter to the base of the tube shell by adopting a surface mounting process;
and step 404, connecting the corresponding positions of the pressure welding points of the integrated multi-pixel sensor on the optical filter and the pressure welding points of the shell base by adopting a metal wire bonding process, and realizing interconnection with the driving circuit and the peripheral signal processing circuit through pins.
Preferably, the circuit structure of the bottom layer of the integrated multi-pixel sensor on the optical filter except the light-sensitive area surface pixel level optical filter is the same as that of the conventional complementary metal oxide CMOS image sensor.
Preferably, the spatial light intensity calibration picture elements are arranged on the integrated multi-pixel sensor on the filter plate in a periodic arrangement, or in a middle and edge arrangement. For a specific arrangement, reference may be made to the foregoing description, which is not repeated herein.
Preferably, the pupil diameter and radius of curvature of the condenser lens, and the size of the envelope are adjusted so that the incident light converging spot is larger than or equal to the size of the photosensitive area of the integrated multi-pixel sensor on the filter.
Preferably, the optical filter is fabricated in a stack form using at least two high transmittance materials of titanium oxide TiO2, magnesium fluoride MgF2, aluminum oxide Al2O3, silicon oxide SiO2, hafnium oxide HfO2, etc., including at least one high refractive index material and at least one low refractive index material. For example, a layer of TiO2 and a layer of SiO2, and repeating the above steps to stack 10-100 layers to complete the manufacture of the filter.
While the invention has been described in connection with specific embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. The utility model provides a miniature spectrum appearance based on integrated multi-pixel sensor on optical filter, includes condensing lens and fixed condensing lens's tube, the tube comprises base and pipe cap, is provided with the pressure welding point on the face that the base is close to the condensing lens side, is provided with the pin on the face that the condensing lens side was kept away from to the base, and pressure welding point and pin walk line UNICOM, its characterized in that through base inside:
the surface of the base, which is close to the side of the condensing lens, is provided with an integrated multi-pixel sensor on the optical filter, the integrated multi-pixel sensor on the optical filter is bonded with the base through a surface mounting process, and a pressure welding point of the integrated multi-pixel sensor on the optical filter is connected with a corresponding pressure welding point on the base through a metal wire through a bonding process;
the surface of each pixel element of the multi-pixel sensor integrated on the optical filter is integrated with a specific optical filter, the pixel elements at different positions are used for detecting incident light with different wave bands, and the specific position of the multi-pixel sensor integrated on the optical filter is also provided with a spatial light intensity calibration pixel for correcting spectrum test deviation caused by different positions.
2. The micro spectrometer of claim 1, wherein the spatial light intensity calibration pixels are arranged on the integrated multi-pixel sensor on the filter sheet in a periodic arrangement, or in a middle and edge arrangement;
the periodic setting mode is that on the multi-pixel sensor integrated on the optical filter, pixels with the positions of (2n, 2n) are set as spatial light intensity calibration pixels, other positions are set as spectral detection pixels, and n is an integer; the mode of middle and edge setting is that on the multi-pixel sensor integrated on the filter, the pixels at four corners and the center position are set as the spatial light intensity calibration pixels, and the other positions are set as the spectrum detection pixels.
3. The micro spectrometer of claim 1, wherein the integrated multi-pixel sensor on the filter has the same circuit structure of the bottom layer except for the light sensitive area surface pixel level filter as that of a conventional CMOS image sensor.
4. The micro spectrometer of claim 1, wherein the pupil diameter and radius of curvature of the condenser lens and the size of the tube envelope are set such that the incident light converging spot is larger than or equal to the size of the photosensitive area of the integrated multi-pixel sensor on the filter.
5. The micro spectrometer of claim 1, wherein the filter is fabricated by stacking 10 to 100 layers of at least two high transmittance materials selected from the group consisting of titanium oxide (TiO 2), magnesium fluoride (MgF 2), aluminum oxide (Al 2O 3), silicon oxide (SiO 2), and hafnium oxide (HfO) 2 in a stack, the at least two high transmittance materials including at least one high refractive index material and at least one low refractive index material.
6. A preparation method of a micro spectrometer based on an integrated multi-pixel sensor on a filter chip is characterized by comprising the following steps:
step 1, manufacturing an integrated multi-pixel sensor on an optical filter, integrating a specific optical filter on the surface of each pixel of the integrated multi-pixel sensor on the optical filter, wherein pixels at different positions are used for detecting incident light of different wave bands, and arranging a spatial light intensity calibration pixel for correcting spectral test deviation caused by different positions at the specific position of the integrated multi-pixel sensor on the optical filter;
step 2, manufacturing a condensing lens and a tube shell, fixing the condensing lens on the tube shell, wherein the tube shell comprises a base and a tube cap, a pressure welding point is arranged on the surface of the base close to the side of the condensing lens, a pin is arranged on the surface of the base far away from the side of the condensing lens, and the pressure welding point is communicated with the pin through wiring in the base;
step 3, adhering the multi-pixel sensor integrated on the optical filter to the base of the tube shell by adopting a surface mounting process;
and 4, connecting the corresponding positions of the integrated multi-pixel sensor pressure welding points on the optical filter and the pressure welding points of the tube shell base by adopting a metal wire bonding process, and realizing interconnection with the driving circuit and the peripheral signal processing circuit through the pins.
7. The method of claim 6, wherein the spatial light intensity calibration pixels are arranged on the integrated multi-pixel sensor on a filter sheet in a periodic arrangement, or in a middle and edge arrangement;
the periodic setting mode is that on the multi-pixel sensor integrated on the optical filter, pixels with the positions of (2n, 2n) are set as spatial light intensity calibration pixels, other positions are set as spectral detection pixels, and n is an integer; the mode of middle and edge setting is that on the multi-pixel sensor integrated on the filter, the pixels at four corners and the center position are set as the spatial light intensity calibration pixels, and the other positions are set as the spectrum detection pixels.
8. The manufacturing method of claim 6, wherein the circuit structure of the integrated multi-pixel sensor on the filter except the light-sensitive area surface pixel level filter is the same as that of a conventional complementary metal oxide CMOS image sensor.
9. The manufacturing method according to claim 6, wherein the pupil diameter and the radius of curvature of the condenser lens and the size of the envelope are set so that the incident light converging spot is larger than or equal to the size of the photosensitive area of the integrated multi-pixel sensor on the optical filter.
10. The method of manufacturing according to claim 6, wherein the optical filter is completed by stacking 10 to 100 layers in a stack using at least two high transmittance materials of titanium oxide TiO2, magnesium fluoride MgF2, aluminum oxide Al2O3, silicon oxide SiO2, hafnium oxide HfO2, the at least two high transmittance materials including at least one high refractive index material and at least one low refractive index material.
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| CN112800956A (en) * | 2021-01-27 | 2021-05-14 | 杭州海康威视数字技术股份有限公司 | Fingerprint in-vivo detection system, method and device |
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