CN112461352A - Quantum well diode-based homointegrated optoelectronic device - Google Patents
Quantum well diode-based homointegrated optoelectronic device Download PDFInfo
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- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H9/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by using radiation-sensitive means, e.g. optical means
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- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
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- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
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Abstract
The invention provides a quantum well diode-based homogeneous integrated optoelectronic device, comprising: a substrate; the light-emitting module is positioned on the surface of the substrate and comprises at least one first quantum well diode device, the first quantum well diode device is used for emitting a first optical signal with a specific wavelength to a measured object, the first optical signal can be changed into a second optical signal after being reflected by the measured object, and the second optical signal has sensing information of the measured object; the detection module is located on the surface of the substrate and comprises at least one second quantum well diode device, and the second quantum well diode device is used for receiving the second optical signal and converting the second optical signal into an electric signal. The invention has the advantages that the light-emitting module is used for emitting the first optical signal, the first optical signal is reflected by the object to be measured to form the second optical signal with the sensing information of the object to be measured, the detection module receives the second optical signal and converts the second optical signal into the electric signal, and the sensing information of the object to be measured is further obtained.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a quantum well diode-based homogeneous integrated optoelectronic device.
Background
Since Amano and Akasaki of the beginning ancient houses university in the 90 th 20 th century and Nakamura of the japanese corporation realized a high-efficiency nitride blue Light Emitting semiconductor Light Emitting Diode (LED), the development of the LED in the field of illumination has been rapidly advanced, and is changing day by day. Today, LEDs are referred to as fourth generation solid state lighting sources. Meanwhile, due to the advantages of simple structure, long service life, low energy consumption, and the like, LEDs are increasingly being widely used in the fields of communication, sensing, medical treatment, aviation, and the like. In 2019, the worldwide optical communication market alone has reached the billions of dollars.
The concept of "integrated optics" was first proposed explicitly by the us bell laboratories Miller. Mainly refers to an optical system which integrates active and passive devices with different functions on the same substrate by a micro-nano processing means. Currently, the photonic integration technology has become a core technology in novel application fields such as optical communication, optical interconnection, new energy and the like, and is valued by governments, research institutions and commercial institutions of various countries. Integrated photonics technology is successively being one of the major research and development projects in the united states, japan, europe, and so on.
Depending on the process, integrated photonics techniques can be divided into monolithic integration and hybrid integration. Among them, monolithic integration is an important development trend for integrated photonic chips due to its simple process and ideal mass production. Meanwhile, photonic integration technology has mainly focused on being based on III-V semiconductor materials. At present, although the integrated manufacturing technology of unit devices is mature, how to realize the system integration of multiple functional devices and multiple material systems still hinders the further development of integrated optics.
Disclosure of Invention
The invention provides a quantum well diode-based homogeneous integrated optoelectronic device, which is used for solving the problems of low integration level and poor performance of the conventional optoelectronic device.
In order to solve the above problems, the present invention provides a quantum well diode-based homointegrated optoelectronic device, comprising: a substrate; the light-emitting module is positioned on the surface of the substrate and comprises at least one first quantum well diode device, the first quantum well diode device is used for emitting a first optical signal with a specific wavelength to a measured object, the first optical signal can be changed into a second optical signal after being reflected by the measured object, and the second optical signal has sensing information of the measured object; and the detection module is positioned on the surface of the substrate and comprises at least one second quantum well diode device which is used for receiving the second optical signal and converting the second optical signal into an electric signal.
Further, the operating band of the first quantum well diode device and the operating band of the second quantum well diode device have an overlapping region.
Further, the light emitting module comprises a plurality of the first quantum well diode devices, and the plurality of the first quantum well diode devices are connected in parallel to form a light emitting array.
Further, the detection module includes a plurality of the second quantum well diode devices connected in series.
Further, the wavelength of the first optical signal emitted by the first quantum well diode device is changed by a change in the quantum well composition of the first quantum well diode device, and the second optical signal of a different wavelength is received by the second quantum well diode device by a change in the quantum well composition of the second quantum well diode device.
Furthermore, the homogeneous integrated optoelectronic device further comprises a signal processing module, wherein the signal processing module is connected with the detection module and used for receiving and processing the electric signal so as to obtain the sensing information of the object to be detected.
Further, the signal processing module includes a decision unit, configured to obtain sensing information of the object to be measured from the electrical signal.
Further, the signal processing module further includes: the amplifying unit is connected with the detection module and used for amplifying the electric signal; and the filtering unit is connected with the amplifying unit and used for filtering out clutter and noise existing in the amplified electric signal.
Further, the sensing information of the object to be measured is vibration frequency information of the object to be measured.
Furthermore, the signal processing module further comprises a statistical unit, the judgment unit can perform A/D conversion on the electric signal, compares the electric signal with a threshold value to obtain vibration frequency information of the object to be measured, and obtains vibration frequency information of the object to be measured after the statistical unit is used for performing statistics on the vibration frequency and the vibration time.
Furthermore, the homogeneous integration optoelectronic device further comprises a voltage stabilizing module, wherein the voltage stabilizing module is at least connected with the light emitting module and is used for providing stable electric energy output for the light emitting module.
The invention has the advantages that the light-emitting module is used for emitting the first optical signal, the first optical signal is reflected by the object to be measured to form the second optical signal with the sensing information of the object to be measured, the detection module receives the second optical signal and converts the second optical signal into the electric signal, and the sensing information of the object to be measured is further obtained.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a quantum well diode-based homointegrated optoelectronic device according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a light emitting module according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a detection module according to an embodiment of the present invention;
fig. 4 is a block diagram of a signal processing module according to an embodiment of the present invention.
Detailed Description
The following describes in detail a specific embodiment of a quantum-well-diode-based homointegrated optoelectronic device according to the present invention with reference to the accompanying drawings.
Fig. 1 is a schematic diagram of an overall structure of a quantum-well-diode-based homointegrated optoelectronic device according to an embodiment of the present invention, and referring to fig. 1, the homointegrated optoelectronic device includes a substrate 10, a light emitting module 11, and a detecting module 12.
The light emitting module 11 is located on the surface of the substrate 10, for example, the light emitting module 11 is located on the upper surface of the substrate 10. The light emitting module 11 can emit light of a specific wavelength to an object to be measured. The specific wavelength may be a specific wavelength in a band from deep ultraviolet to infrared. The light signal emitted by the light emitting module 11 can be reflected by the object to be measured, and the reflected light carries the sensing information of the object to be measured. The sensing information includes, but is not limited to, frequency information of the object vibration, dynamic amplitude of the object vibration, and the like.
Specifically, the light emitting module 11 includes at least one first quantum well diode device 111, where the first quantum well diode device 111 is capable of emitting a first optical signal with a specific wavelength to a measured object, and the first optical signal is capable of being changed into a second optical signal after being reflected by the measured object, and the second optical signal has sensing information of the measured object. The change of the surface of the object to be measured can cause the change of the intensity of the first optical signal, and a dynamic modulation effect is achieved, namely the change of the surface of the object is equivalent to an optical modulator, so that the intensity of the first optical signal and the like are changed, and the second optical signal is formed through reflection. The first quantum well diode device 111 may emit the first optical signal under a forward bias condition.
Wherein, the wavelength of the first optical signal emitted by the first quantum well diode device 111 is changed by the change of the quantum well composition of the first quantum well diode device 111, so that the first quantum well diode device 111 can emit the first optical signal with different wavelengths according to the requirement.
Further, please refer to fig. 2, which is a schematic structural diagram of a light emitting module 11 according to an embodiment of the present invention, in which the light emitting module 11 includes a plurality of first quantum well diode devices 111, and the plurality of first quantum well diode devices 111 are connected in parallel to form a light emitting array. The plurality of first quantum well diode devices 111 are connected in parallel, so that the light intensity of the light emitting module 11 can be enhanced, the intensity of a second optical signal received by the subsequent detection module 12 meets the requirement, and the detection accuracy of the optoelectronic device is further improved. The specific number of the first quantum well diode devices 111 may be selected by a person skilled in the art according to actual needs, for example, according to the intensity of the first optical signal to be emitted, which is not limited in this embodiment. The term "plurality" as used in the present embodiment means two or more.
The detection module 12 is located on the surface of the substrate 10. For example, the detection module 12 is located on the upper surface of the substrate 10. The detection module 12 can receive a second optical signal reflected by the object to be measured and convert the second optical signal into an electrical signal. And the second optical signal carries the sensing information of the object to be measured, so that the electric signal converted by the second optical signal also carries the sensing information of the object to be measured.
The detection module 12 comprises at least one second quantum well diode device 121. The second quantum well diode device 121 is configured to receive the second optical signal and convert the second optical signal into an electrical signal. Due to the photoelectric effect, the second quantum well diode device 121 may generate the electrical signal under irradiation of a second optical signal of a specific wavelength. The electrical signal includes, but is not limited to, a voltage signal.
In this embodiment, the second quantum well diode device 121 can receive the second optical signal with different wavelength by changing the quantum well composition of the second quantum well diode device 121, for example, the quantum well composition of the second quantum well diode device 121 is changed to enable the second quantum well diode device 121 to receive the second optical signal with specific wavelength in the deep ultraviolet to infrared bands and generate the electrical signal with the object sensing information.
Further, please refer to fig. 3, which is a schematic structural diagram of the detection module 12 according to an embodiment of the present invention, in the embodiment, the detection module 12 includes a plurality of second quantum well diode devices 121, and the plurality of second quantum well diode devices 121 are connected in series, so as to improve the receiving and converting efficiency of the second optical signal and improve the detection accuracy of the optoelectronic device. The specific number of the second quantum well diode devices 121 may be selected by a person skilled in the art according to actual needs, for example, according to the receiving sensitivity of the detection module 12, which is not limited in this embodiment. The term "plurality" as used in the present embodiment means two or more.
The operating band of the second quantum well diode device 121 is matched with the operating band of the first quantum well diode device 111, for example, the operating band of the first quantum well diode device and the operating band of the second quantum well diode device have an overlapping region, so that the first optical signal emitted by the first quantum well diode device 111 can be received by the second quantum well diode device 121 after being reflected by a measured object. For example, in an embodiment of the present invention, the second quantum well diode device 121 and the first quantum well diode device 111 both operate in a blue light band.
In this embodiment, the substrate 10 may be a III-IV material substrate or a silicon substrate. Both the first quantum well diode device 111 and the second quantum well diode device 121 may be fabricated using III-IV materials to further improve the performance of the homointegrated optoelectronic device. The first quantum well diode device 111 and the second quantum well diode device 121 are integrally manufactured on the surface of the substrate 10 by adopting a compatible manufacturing process, so that the homogeneous integration of the light emitting module 11 and the detection module 12 is realized. Thereby improving the integration level of the optoelectronic device and enhancing the function of the optoelectronic device.
The homogeneous integrated optoelectronic device based on the quantum well diode utilizes the light emitting module to emit a first optical signal, the first optical signal is reflected by a measured object to form a second optical signal with the sensing information of the measured object, the detection module receives the second optical signal and converts the second optical signal into an electrical signal, and the sensing information of the measured object is further obtained.
Further, with continued reference to fig. 1, the quantum-well-diode-based homointegrated optoelectronic device of the present invention further includes a signal processing module 13. The signal processing module 13 is connected to the detection module 12, and is configured to receive the electrical signal and process the electrical signal to obtain sensing information of the object to be measured.
Fig. 4 is a block diagram of the signal processing module 13 according to an embodiment of the present invention. Referring to fig. 1 and 4, the signal processing module 13 includes a decision unit 133. The decision unit 133 is configured to receive an electrical signal, and obtain sensing information of the object to be measured from the electrical signal. Specifically, the decision unit 133 can process the electrical signal and obtain the sensing information of the object to be measured.
Further, the signal processing module 13 further includes a statistic unit 134. The decision unit 133 performs a/D conversion on the electrical signal, compares the electrical signal with a threshold to obtain the vibration frequency information of the object to be measured, and performs statistics on the vibration frequency and the vibration time by using the statistics unit 134 to obtain the vibration frequency information of the object to be measured. The statistic unit 134 includes a counter and a timer.
The present invention further provides a specific implementation manner of the decision unit 133. The decision unit 133 includes an OLED module and an Arduino Nano development board formed by a set of single chip microcomputer chips. The OLED module is connected to and driven by an Arduino Nano development board. The signal of telecommunication gets into Arduino singlechip A0 pin, utilizes Arduino Nano development board to carry out real-time processing. The Arduino single chip microcomputer performs A/D conversion (analog-digital conversion) on an electric signal and performs comparison judgment on the electric signal and a threshold value to obtain the information of the vibration frequency of the object, specifically, the Arduino single chip microcomputer performs comparison judgment on a background photocurrent and an actual measurement photocurrent to determine the threshold value, so that the amplitude and frequency information of vibration is judged and output, and the information of the vibration frequency of the object is obtained after statistics is performed by utilizing statistical units such as a counter and a timer. And further, after the object vibration frequency information is obtained, displaying the current object vibration frequency on the OLED module by the Arduino single chip microcomputer.
Further, in some cases, the electrical signal generated by the detection module 12 is very small, so that the electrical signal needs to be amplified and filtered before being input into the decision unit 133. Therefore, in this embodiment, the signal processing module 13 further includes an amplifying unit 131 and a filtering unit 132.
The amplifying unit 131 is connected to the detecting module 12, and is configured to amplify the electrical signal. The amplifying unit 131 may be a two-stage amplifying circuit composed of LM358, which is capable of amplifying an electric signal several hundred times.
The filtering unit 132 is connected to the amplifying unit 131, and is configured to filter out noise and noise in the electrical signal after amplification. The filtering unit 132 may be a low-pass filtering circuit composed of a resistor and a capacitor, and is capable of isolating high-frequency noise.
The electric signals passing through the amplifying unit 131 and the filtering unit 132 are used as input signals of the judging unit 133, so as to obtain the sensing information of the object to be measured.
Specifically, after the detection module 12 converts the second optical signal into an electrical signal, the electrical signal is used as an input signal of the amplification unit 131, and the amplification unit 131 amplifies the electrical signal; the amplified electrical signal is used as an input signal of the filtering unit 132, and the filtering unit 132 filters noise and noise present in the amplified electrical signal; the filtered electrical signal is used as an input signal of the decision unit 133, and the decision unit 133 obtains sensing information of the measured object from the filtered electrical signal. Wherein, the decision unit 133 converts the electrical signal into a digital signal and displays the object vibration frequency information.
Further, in an embodiment of the present invention, the electronic device further includes a voltage stabilizing module 14, and the external power input is connected to the input terminal of the voltage stabilizing module 14. The voltage stabilizing module 14 can output electric energy with small fluctuation and constant current. The voltage stabilizing module 14 is connected to at least the light emitting module 11, and is configured to provide a stable power output to the first quantum well diode device 111 of the light emitting module 11. In this embodiment, the voltage regulation module 14 may adopt an LM7805 chip, and the LM7805 chip may output 5V electric energy with small fluctuation and constant current.
Further, the voltage stabilizing module 14 may be further connected to the signal display processing module 13, and configured to provide stable power output to the amplifying unit 131, the filtering unit 132, and the determining unit 133.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (11)
1. A quantum-well-diode-based homointegrated optoelectronic device, comprising:
a substrate;
the light-emitting module is positioned on the surface of the substrate and comprises at least one first quantum well diode device, the first quantum well diode device is used for emitting a first optical signal with a specific wavelength to a measured object, the first optical signal can be changed into a second optical signal after being reflected by the measured object, and the second optical signal has sensing information of the measured object;
and the detection module is positioned on the surface of the substrate and comprises at least one second quantum well diode device which is used for receiving the second optical signal and converting the second optical signal into an electric signal.
2. The homointegrated optoelectronic device of claim 1, wherein the band of operation of the first quantum well diode device has an overlap region with the band of operation of the second quantum well diode device.
3. The homointegrated optoelectronic device of claim 1, wherein the light emitting module comprises a plurality of the first quantum well diode devices connected in parallel and forming a light emitting array.
4. The homointegrated optoelectronic device of claim 1, wherein the detection module comprises a plurality of the second quantum well diode devices connected in series.
5. The homointegrated optoelectronic device of claim 1, wherein the wavelength of the first optical signal emitted by the first quantum well diode device is varied by a variation of a quantum well composition of the first quantum well diode device, and the second optical signal of a different wavelength is receivable by the second quantum well diode device by a variation of a quantum well composition of the second quantum well diode device.
6. The homointegrated optoelectronic device according to claim 1, further comprising a signal processing module, connected to the detection module, for receiving and processing the electrical signal to obtain the sensing information of the object to be measured.
7. The homointegrated optoelectronic device according to claim 6, wherein the signal processing module comprises a decision unit for obtaining the sensing information of the object to be measured from the electrical signal.
8. The homointegrated optoelectronic device of claim 7, wherein the signal processing module further comprises:
the amplifying unit is connected with the detection module and used for amplifying the electric signal;
and the filtering unit is connected with the amplifying unit and used for filtering out clutter and noise existing in the amplified electric signal.
9. The homointegrated optoelectronic device according to claim 1, wherein the sensed information of the object under test is vibration frequency information of the object under test.
10. The homointegrated optoelectronic device according to claim 6, wherein the signal processing module further includes a statistical unit, the decision unit further performs a/D conversion on the electrical signal, compares the electrical signal with a threshold to obtain information of the vibration frequency of the object to be measured, and obtains information of the vibration frequency of the object to be measured after performing statistics of the vibration frequency and the vibration time by using the statistical unit.
11. The homointegrated optoelectronic device according to claim 1, further comprising a voltage regulator module connected to at least the light emitting module for providing a stable electrical power output to the light emitting module.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090244515A1 (en) * | 2008-02-29 | 2009-10-01 | Martin Rudolf Behringer | Sensor system with a lighting device and a detector device |
| CN101936766A (en) * | 2009-06-29 | 2011-01-05 | 株式会社山武 | Counter, physical quantity sensor, counting method, and physical quantity measuring method |
| CN108680929A (en) * | 2018-07-18 | 2018-10-19 | 度亘激光技术（苏州）有限公司 | A kind of three-dimensional sensing system based on vertical cavity surface emitting laser arrays |
| US20190331473A1 (en) * | 2016-06-13 | 2019-10-31 | Vixar, Llc | Improved self-mix module utilizing filters |
| CN110568216A (en) * | 2019-09-10 | 2019-12-13 | 南京邮电大学 | Homogeneous integrated optoelectronic device |
-
2020
- 2020-12-08 CN CN202011423243.8A patent/CN112461352A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090244515A1 (en) * | 2008-02-29 | 2009-10-01 | Martin Rudolf Behringer | Sensor system with a lighting device and a detector device |
| CN101936766A (en) * | 2009-06-29 | 2011-01-05 | 株式会社山武 | Counter, physical quantity sensor, counting method, and physical quantity measuring method |
| US20190331473A1 (en) * | 2016-06-13 | 2019-10-31 | Vixar, Llc | Improved self-mix module utilizing filters |
| CN108680929A (en) * | 2018-07-18 | 2018-10-19 | 度亘激光技术（苏州）有限公司 | A kind of three-dimensional sensing system based on vertical cavity surface emitting laser arrays |
| CN110568216A (en) * | 2019-09-10 | 2019-12-13 | 南京邮电大学 | Homogeneous integrated optoelectronic device |
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Application publication date: 20210309 |