CN203250738U - Two-quadrant photodiode - Google Patents
Two-quadrant photodiode Download PDFInfo
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- CN203250738U CN203250738U CN 201320153256 CN201320153256U CN203250738U CN 203250738 U CN203250738 U CN 203250738U CN 201320153256 CN201320153256 CN 201320153256 CN 201320153256 U CN201320153256 U CN 201320153256U CN 203250738 U CN203250738 U CN 203250738U
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- quadrant photodiode
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Abstract
The utility model relates to the electronic element technical field, and specifically discloses a two-quadrant photodiode comprising a pipe seat, a chip fixedly arranged on the pipe seat, and diode lead wires; the chip is provided with two PIN photoelectric detectors; each PIN photoelectric detector comprises a intrinsic silicon substrate layer, a photosensitive area arranged on a front side of the intrinsic silicon substrate layer, and an ohmic contact layer arranged on a backside of the intrinsic silicon substrate layer; the photosensitive area front side and the ohmic contact layer backside are both provided with metal electrodes; and the diode lead wires are respectively and electrically connected with the corresponding metal electrode. The two-quadrant photodiode can be widely applied for light pulse detection in fiber communication, range finding, sensing, and from visible light to near-infrared field, and is applied in industrial control field, is especially suitable for photoelectric reception transition of a laser gyro, has excellent technical parameters, and high response speed and responsibility.
Description
Technical field
The utility model relates to technical field of electronic components, relates in particular to a kind of two quadrant photodiode that light signal is changed into the signal of telecommunication.
Background technology
The two quadrant photodiode is integrated two photosensitive units on a chip, works under reverse bias condition.When illumination, each photosensitive unit is absorption optical respectively, produces electron-hole pair at depletion layer or in diffusion length of depletion layer, is separated by electric field at last.When depletion layer is passed through in the charge carrier drift, externally form photoelectric current in the circuit, thereby realize opto-electronic conversion.At present, less about the Product Report of two quadrant photodiode both at home and abroad, existing minority Related product, equal Shortcomings aspect the important technological parameters such as puncture voltage, response speed and responsiveness can not well satisfy user demand.
The utility model content
The purpose of this utility model is, proposes a kind of two quadrant photodiode, and it can be widely used in the opto-electronic conversion field, has faster response speed and responsiveness.
For achieving the above object, the utility model provides a kind of two quadrant photodiode, and it comprises: base, with the hard-wired chip of base and diode lead, described chip is provided with two PIN photodetectors; This each PIN photodetector includes an intrinsic silicon substrate layer, is located at the photosensitive area in intrinsic silicon substrate layer front, and is located at the ohmic contact layer at the intrinsic silicon substrate layer back side; Front, described photosensitive area and the ohmic contact layer back side are equipped with metal electrode, and the diode lead respectively metal electrode corresponding with it is electrically connected.
In the utility model, front, described photosensitive area is provided with one deck anti-reflection film.
Concrete, the positive metal electrode that arranges in described photosensitive area is the aluminium electrode, the metal electrode that the ohmic contact layer back side arranges is cr-au electrode.
Further, described intrinsic silicon substrate layer front along the photosensitive area and the anti-reflection film outside also be provided with an insulator layer.
Moreover described insulator layer front also is provided with layer protecting film.
In the utility model, described base comprises a chassis, and is installed on the potsherd of chassis upside by solder sheet; Described chip is connected with this potsherd by a conductive adhesive layer, and chip is installed on the base by this potsherd.
Wherein, described diode lead one end and chassis fix, and the other end vertically extends setting along the chassis; This diode lead includes two P utmost point lead-in wires, and this two P utmost point goes between and fixedly mounts by insulator between an end and the chassis.
Concrete, being equipped with ohmic contact point on described each PIN photodetector front, this two P utmost point lead-in wire all is connected with ohmic contact point by a pressure welding spun gold is corresponding.
In the utility model, described diode lead comprises that also body contact lead-in wire, this body contact end that goes between is fixed in the place, centre position of tray bottom.
Optionally, described two P utmost points lead-in wire is the cab over type lead-in wire, the lead-in wire that the body contact lead-in wire can be taken the lead for an end.
Two quadrant photodiode of the present utility model, it can be widely used in optical fiber communication, range finding, sensing and light pulse detection and industrial control field from visible light to the near-infrared field, the photoelectricity that is particularly useful for laser gyro receives conversion, its not only simple in structure, manufacture difficulty is lower, so cost is low is conducive to industrialization promotion; Simultaneously, it has comparatively good technical parameter, and response speed and responsiveness are all higher.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art, apparently, accompanying drawing in the following describes only is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the assembly structure schematic diagram of a kind of specific embodiment of the utility model two quadrant photodiode;
Fig. 2 is the vertical view of Fig. 1;
The position relationship schematic diagram of Fig. 3 the utility model chips and PIN photodetector;
The vertical structure schematic diagram of a kind of specific embodiment of PIN photodetector in Fig. 4 the utility model;
The assembly structure schematic diagram of a kind of specific embodiment of base in Fig. 5 the utility model;
Fig. 6 is the vertical view of Fig. 5.
Embodiment
Below in conjunction with the accompanying drawing among the utility model embodiment, the technical scheme among the utility model embodiment is clearly and completely described, obviously, described embodiment only is the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that obtains under the creative work prerequisite, all belong to the scope of the utility model protection.
Shown in Fig. 1-4, the utility model provides a kind of two quadrant photodiode, and it comprises: base 10, with base 10 hard-wired chip 20 and diode leads 30,30 ', described chip 20 is provided with two PIN photodetectors 40; This each PIN photodetector 40 includes an intrinsic silicon substrate layer (I layer) 41, is located at the photosensitive area (P layer) 42 in intrinsic silicon substrate layer 41 fronts, and is located at the ohmic contact layer (N layer) 43 at intrinsic silicon substrate layer 41 back sides; 42 fronts, described photosensitive area and ohmic contact layer 43 back sides are equipped with metal electrode, and diode lead 30,30 ' the respectively metal electrode corresponding with it is electrically connected.In the utility model, described chip 20 can adopt existing photo-detector optical sensor chip commonly used, described PIN photodetector 40 adopts planar diffusion type silicon PIN photodetector, this PIN photodetector 40 is a kind of PIN junction diode structures, and the PIN knot forms photosensitive area 42, back side diffusion phosphorus formation ohmic contact layer 43 by intrinsic silicon substrate layer 41 positive diffused with boron.In order to reduce the tracking current of device, improve the puncture voltage of device, by the adjustment to intrinsic silicon substrate layer 41 thickness, can regulate response speed and the responsiveness of device.Two quadrant photodiode of the present utility model, it is mainly used in the laser gyro system, also is widely used in optical fiber communication, range finding, sensing and light pulse detection and industrial control field from visible light to the near-infrared field simultaneously.
In the utility model specific embodiment, described photosensitive area 42 is a light responsive material layer, and these photosensitive area 42 positive deposits are provided with one deck anti-reflection film 44, can reduce the incident reflection of light, improves the responsiveness of PIN photodetector 40.The important technological parameters that the utility model reaches is as follows: the broad spectrum response scope is from 400nm to 1100nm, responsiveness 〉=0.35A/W(λ=635nm), dark current≤5nA(VR=10V), reverse breakdown voltage 〉=50V, electric capacity≤6pF(VR=10V, f=1MHz).Can be found out obviously that by These parameters two quadrant photodiode response speed of the present utility model and responsiveness are all higher.
Can be aluminium electrode 45 as the described photosensitive area of a kind of selectivity embodiment of the present utility model 42 positive metal electrodes that arrange, the metal electrode that ohmic contact layer 43 back sides arrange is cr-au electrode (CrAu) 46.Further, described intrinsic silicon substrate layer 41 fronts along the photosensitive area 42 and anti-reflection film 44 outsides also be provided with an insulator layer 47, this insulator layer 47 mainly is comprised of earth silicon material.Moreover; as a kind of preferred embodiment of the present utility model; can also layer protecting film 48 be set in insulator layer 47 fronts; these diaphragm 48 main silicon nitride materials that adopt are made; this silicon nitride material itself has lubrification; and wear-resistant, anti-oxidant during high temperature, can play certain protective effect to this two quadrant photodiode device.
Shown in Fig. 5,6, the base 10 in the utility model comprises a chassis 11, and is installed on the potsherd 13 of chassis 11 upsides by solder sheet 12; Described chip 20 is connected with this potsherd 13 by a conductive adhesive layer 21, and chip 20 is installed on the base 10 by this potsherd 13.Wherein, described diode lead 30,30 ' one end and chassis 11 fix, and 11 vertical extensions arrange the other end along the chassis.This diode lead 30,30 ' includes 30, one N utmost point lead-in wires 30 ' of two P utmost point lead-in wires, and this two P utmost point goes between between 30 1 ends and the chassis 11 by insulator 14 fixed installations.In the utility model specific embodiment, be equipped with an ohmic contact point 49 on described each PIN photodetector 40 front, this two P utmost point lead-in wire 30 all is connected with an ohmic contact point 49 by a pressure welding spun gold 31 correspondences.Can weld by the thermocompression bonding technology between this pressure welding spun gold 31 and the two P utmost points lead-in wire 30.Certainly, in other specific embodiment of the utility model, this two P utmost point lead-in wire 30 can also be connected with corresponding ohmic contact point 49 by pressure welding materials such as Si-Al wire or copper wires.In the utility model, described diode lead 30,30 ' also comprises body contact lead-in wire 30 ', and this body contact lead-in wire 30 ' one end is fixed in the place, centre position of 11 bottoms, chassis.As a kind of selectivity embodiment of the present utility model, described two P utmost points lead-in wire 30 is the cab over type lead-in wire, the lead-in wire that body contact lead-in wire 30 ' can be taken the lead for an end.
The above only is preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., all should be included within the protection range of the present utility model.
Claims (10)
1. two quadrant photodiode, comprise base, with the hard-wired chip of base and diode lead, it is characterized in that described chip is provided with two PIN photodetectors; This each PIN photodetector includes an intrinsic silicon substrate layer, is located at the photosensitive area in intrinsic silicon substrate layer front, and is located at the ohmic contact layer at the intrinsic silicon substrate layer back side; Front, described photosensitive area and the ohmic contact layer back side are equipped with metal electrode, and the diode lead respectively metal electrode corresponding with it is electrically connected.
2. two quadrant photodiode as claimed in claim 1 is characterized in that, front, described photosensitive area is provided with one deck anti-reflection film.
3. two quadrant photodiode as claimed in claim 2 is characterized in that, the positive metal electrode that arranges in described photosensitive area is the aluminium electrode, and the metal electrode that the ohmic contact layer back side arranges is cr-au electrode.
4. two quadrant photodiode as claimed in claim 3 is characterized in that, described intrinsic silicon substrate layer front also is provided with an insulator layer along the photosensitive area and outside the anti-reflection film.
5. two quadrant photodiode as claimed in claim 4 is characterized in that, described insulator layer front also is provided with layer protecting film.
6. two quadrant photodiode as claimed in claim 1 is characterized in that, described base comprises a chassis, and is installed on the potsherd of chassis upside by solder sheet; Described chip is connected with this potsherd by a conductive adhesive layer, and chip is installed on the base by this potsherd.
7. two quadrant photodiode as claimed in claim 6 is characterized in that, described diode lead one end and chassis fix, and the other end vertically extends setting along the chassis; This diode lead includes two P utmost point lead-in wires, and this two P utmost point goes between and fixedly mounts by insulator between an end and the chassis.
8. two quadrant photodiode as claimed in claim 7 is characterized in that, is equipped with ohmic contact point on described each PIN photodetector front, and this two P utmost point lead-in wire all is connected with ohmic contact point by a pressure welding spun gold is corresponding.
9. two quadrant photodiode as claimed in claim 7 is characterized in that, described diode lead comprises that also body contact lead-in wire, this body contact end that goes between is fixed in the place, centre position of tray bottom.
10. two quadrant photodiode as claimed in claim 9 is characterized in that, described two P utmost points lead-in wire is the cab over type lead-in wire, and the body contact lead-in wire is the lead-in wire that an end is taken the lead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320153256 CN203250738U (en) | 2013-03-29 | 2013-03-29 | Two-quadrant photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320153256 CN203250738U (en) | 2013-03-29 | 2013-03-29 | Two-quadrant photodiode |
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| Publication Number | Publication Date |
|---|---|
| CN203250738U true CN203250738U (en) | 2013-10-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320153256 Expired - Fee Related CN203250738U (en) | 2013-03-29 | 2013-03-29 | Two-quadrant photodiode |
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| CN (1) | CN203250738U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987076A (en) * | 2020-08-31 | 2020-11-24 | 中国电子科技集团公司第四十四研究所 | Near-infrared and visible light wide-spectrum photoelectric detector and manufacturing method thereof |
-
2013
- 2013-03-29 CN CN 201320153256 patent/CN203250738U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987076A (en) * | 2020-08-31 | 2020-11-24 | 中国电子科技集团公司第四十四研究所 | Near-infrared and visible light wide-spectrum photoelectric detector and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131023 Termination date: 20160329 |
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| CF01 | Termination of patent right due to non-payment of annual fee |