CN111987076A - Near-infrared and visible light wide-spectrum photoelectric detector and manufacturing method thereof - Google Patents
Near-infrared and visible light wide-spectrum photoelectric detector and manufacturing method thereof Download PDFInfo
- Publication number
- CN111987076A CN111987076A CN202010893490.8A CN202010893490A CN111987076A CN 111987076 A CN111987076 A CN 111987076A CN 202010893490 A CN202010893490 A CN 202010893490A CN 111987076 A CN111987076 A CN 111987076A
- Authority
- CN
- China
- Prior art keywords
- chip
- ceramic substrate
- photoelectric chip
- photoelectric
- tube seat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001228 spectrum Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000000919 ceramic Substances 0.000 claims abstract description 69
- 238000003466 welding Methods 0.000 claims abstract description 10
- 238000001514 detection method Methods 0.000 claims abstract description 7
- 238000004146 energy storage Methods 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000003292 glue Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000004073 vulcanization Methods 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 8
- 238000013461 design Methods 0.000 abstract description 3
- 230000001360 synchronised effect Effects 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 description 9
- 238000002513 implantation Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000004044 response Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- -1 boron difluoride ions Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/043—Stacked arrangements of devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
- G01J3/427—Dual wavelengths spectrometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention belongs to the technical field of semiconductors, and particularly relates to a near-infrared and visible light wide-spectrum photoelectric detector and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: the device comprises a tube seat, a first photoelectric chip, a ceramic substrate, a second photoelectric chip and a tube cap; the first photoelectric chip is fixed on the tube seat; the ceramic substrate is fixed on the tube seat, and the first photoelectric chip is positioned right below the ceramic substrate; the second photoelectric chip is fixed on the upper surface of the ceramic substrate; electrodes of the first photoelectric chip and the second photoelectric chip are connected with a binding post of the tube seat through a lead; welding a tube cap on the tube seat in an energy storage welding mode to enable internal devices of the photoelectric detector to be in a sealed environment; according to the invention, through the design of the internal packaging structure of the device, the wide spectrum detector packaging structure with the double vertically stacked chips is formed, and the synchronous detection of signals of two parts of near infrared light and visible light of a single light source is realized under the condition of no light splitting system.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a near-infrared and visible light wide-spectrum photoelectric detector and a manufacturing method thereof.
Background
The photodetector is a sensor in which a photodiode chip (simply referred to as "photoelectric chip") is used as a conversion element. It can be used for detecting light intensity, illuminance, radiation temperature measurement, gas composition analysis, etc., and also can be used for detecting the physical quantities of part diameter, surface roughness, strain, displacement, vibration, speed and acceleration, and the identification of object shape and working state, etc. The photoelectric detector has the characteristics of non-contact, quick response and the like, and is widely applied to industrial automation.
The wide-spectrum photoelectric detector is internally provided with chips made of two materials of indium gallium arsenide (InGaAs for short) and silicon (Si for short), and synchronous detection of optical signals in two wavelength ranges of a near infrared band and a visible band is realized on one device. The detection system constructed by the wide-spectrum detector has unique advantages in the functions of noise elimination, accuracy validation, speed measurement and the like. Therefore, the wide-spectrum detector has the practical value that the monochromatic photoelectric detector is difficult to replace in engineering application. For example, patent publication CN204388871U, "a dual band photosensor," discloses a device comprising: the sensor comprises a sensor base, a first ceramic substrate, a second ceramic substrate and a pipe cap, wherein a grounding surface at the upper end of the sensor base is provided with a plurality of binding posts and is isolated from the grounding surface by insulating materials, the lower end of the sensor base is provided with a plurality of pins and a grounding pin, the first ceramic substrate is provided with a support seat for supporting the second ceramic substrate and a through hole for the wiring terminal to penetrate through, a first photodiode chip is arranged on the first ceramic substrate, a central through hole for light waves to pass through is arranged in the center of the second ceramic substrate, a second photodiode chip is arranged on the second ceramic substrate, a light-transmitting optical window is arranged on the tube cap, the first ceramic substrate, the first photodiode chip, the second ceramic substrate and the second photodiode chip are packaged in a cavity formed by the pipe cap and the sensor base through the pipe cap. The device can collect short wavelength light and long wavelength light simultaneously.
However, in the above prior art, one of the photodiode chips is disposed between two ceramic substrates, when light is irradiated to the device, the ceramic substrate on the photodiode chip can shield part of the light, thereby causing insufficient light; the two photodiode chips of the device are close to each other, and when strong light is irradiated, light currents formed by the two chips are mutually influenced, so that the light collection efficiency of the device is reduced; the detector has more elements and difficult packaging structure, and is not beneficial to mass production.
Disclosure of Invention
In order to solve the above problems of the prior art, the present invention provides a wide-spectrum photodetector for near-infrared light and visible light, comprising: the photoelectric chip comprises a tube seat 1, a first photoelectric chip 2, a ceramic substrate 3, a second photoelectric chip 4 and a tube cap 5;
the first photoelectric chip 2 is fixed on the top plane of the tube seat 1; the ceramic substrate 3 is fixed on the tube seat 1, and the first photoelectric chip 2 is positioned right below the ceramic substrate 3; the second photoelectric chip 4 is fixed on the upper surface of the ceramic substrate 3; the electrodes of the first photoelectric chip 2 and the second photoelectric chip 4 are connected with the binding post of the tube seat 1 through a lead; and a tube cap 5 is welded on the tube seat in an energy storage welding mode, so that a device in the inner cavity of the photoelectric detector is in a sealed environment.
Preferably, the tube seat 1 is a stepped cylindrical structure, and a radial positioning pin 16 for positioning a clamp is arranged on a side surface of the tube seat 1.
Preferably, the tube seat 1 is provided with four binding posts, and the four binding posts are electrically isolated from the tube seat 1 through insulating materials; the four binding posts include: a first low terminal 11, a second low terminal 12, a first high terminal 13, and a second high terminal 14.
Preferably, the height difference between the first high terminal 13 and the second high terminal 14) and the first low terminal 11 and the second low terminal 12 is 0.50mm to 1.00 mm.
Preferably, the first optoelectronic chip 2 is made of InGaAs semiconductor material, the P, N electrode metal pads of the chip are all located on the same side of the chip photosurface 23, and the metal pad of the first P-electrode 21 is connected with the first photosurface 23.
Preferably, the ceramic substrate 3 is a hollow stool structure, and the four supporting legs 32 are located below the four top corners of the ceramic substrate 3; the center of the ceramic substrate 3 is provided with a central through hole 31; and a metal pattern is arranged on the upper surface of the ceramic substrate 3 and used for supporting a bonding pad of the second photoelectric chip 4.
Preferably, the central through hole 31 is square.
Preferably, the second optoelectronic chip 4 is made of a Si semiconductor material, the metal pads of the second P-electrode 41 and the second N-electrode 42 are both disposed on a plane of the second optoelectronic chip 4 having a photosurface, and the second P-electrode and the second N-electrode of the second optoelectronic chip are connected to the high terminal of the stem by using leads; the bottom of the second photoelectric chip 4 is processed by adopting a thinning and polishing process, so that the near-infrared light can penetrate through the second photoelectric chip 4 and be projected onto the first photoelectric chip 2.
Preferably, the pipe cap 5 is a hollow cylinder structure; the upper surface of the pipe cap 5 is provided with an optical window 51; the center of the optical window 51 corresponds to the center of the tube seat 1, and the surface of the optical window 51 is coated with an antireflection film to enhance the light transmission and reduce the attenuation of detection signals.
A method for manufacturing a near-infrared and visible light wide-spectrum photoelectric detector comprises the following steps:
step 1: removing oxides on the surface of the first photoelectric chip 2 by adopting a vulcanization mode and a He ion beam bombardment mode;
step 2: fixing the first photoelectric chip 2 in the middle of the base of the tube seat by using insulating glue;
and step 3: the P, N electrodes on the first photoelectric chip 2 fixed on the base are respectively connected with the corresponding first low binding post 11 and second low binding post 12 on the tube seat by gold wire ball bonding;
and 4, step 4: fixing the ceramic substrate 3 in the center of the base of the tube seat by using insulating glue, wherein a supporting leg 32 of the ceramic substrate is positioned in the area outside the first photoelectric chip 2 on the surface of the base of the tube seat, a lead of the first photoelectric chip 2 penetrates out of a cavity between the two supporting legs of the ceramic substrate, and a central through hole 31 in the center of the ceramic substrate is concentric with a first photoelectric chip photosurface 23 below the central through hole;
and 5: fixing the second photoelectric chip 4 on the central position of the surface of the ceramic substrate by using insulating glue;
step 6: the P, N electrodes on the second photoelectric chip 4 fixed on the ceramic substrate 3 are respectively connected with the first high binding post 13 and the second high binding post 14 on the tube seat 1 by adopting a gold wire ball welding mode;
and 7: and sealing the tube cap 5 and the tube seat 1 by adopting an energy storage welding mode to ensure that the chip on the tube seat 1 and the ceramic substrate 3 are in an airtight environment.
According to the invention, through the design of the internal packaging structure of the device, the wide-spectrum detector packaging structure with the double vertically stacked chips is formed, and the synchronous detection of signals of two parts of near infrared light and visible light of a single light source under the condition of no light splitting system is realized; the ceramic substrate is designed in a four-side symmetrical structure, and the support column is tangent to the tube seat lead post insulator, so that the operation difficulty of carrier assembly alignment is reduced; the chips in the invention are all designed by adopting electrodes on the same surface, P, N electrode leads are all led out from the front surface of the chip, and no extra carrier is required to be assembled for leading out the electrodes on the back surface of the chip; the invention reduces the packaging assemblies of the photoelectric detector, reduces the packaging difficulty and is suitable for batch production.
Drawings
FIG. 1 is a split block diagram of the broad spectrum detector of the present invention;
FIG. 2 is a diagram of a first optoelectronic chip of the present invention;
FIG. 3 is a structural view of a ceramic substrate according to the present invention;
FIG. 4 is a diagram of a second optoelectronic chip of the present invention;
FIG. 5 is a first optoelectronic chip assembly of the present invention;
FIG. 6 is a second optoelectronic chip assembly of the present invention;
FIG. 7 is a block diagram of a broad spectrum detector of the present invention
The solar cell comprises a tube seat 1, a tube seat 11, a first low binding post 12, a second low binding post 13, a first high binding post 14, a second high binding post 15, a pin 16, a radial positioning pin 2, a first photoelectric chip 21, a first P electrode 22, a first N electrode 23, a first photosensitive surface 3, a ceramic substrate 31, a central through hole 32, a supporting leg 4, a second photoelectric chip 41, a second P electrode 42, a second N electrode 43, a second photosensitive surface 5, a tube cap 51 and an optical window.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the existing wide-spectrum photoelectric detector, two materials are integrated on one chip, so that the photoelectric signals of a near infrared band and a visible band are separately measured by system adjustment; and the existing wide-spectrum photoelectric detector has more components and parts and difficult packaging structure, and is not beneficial to batch production.
A near-infrared and visible wide-spectrum photodetector, as shown in fig. 1, comprising: the photoelectric chip comprises a tube seat 1, a first photoelectric chip 2, a ceramic substrate 3, a second photoelectric chip 4 and a tube cap 5; the first photoelectric chip 2 is fixed on the top plane of the tube seat 1; the ceramic substrate 3 is fixed on the tube seat 1, and the first photoelectric chip 2 is positioned right below the ceramic substrate 3; the second photoelectric chip 4 is fixed on the upper surface of the ceramic substrate 3; the electrodes of the first photoelectric chip 2 and the second photoelectric chip 4 are connected with the binding post of the tube seat 1 through a lead; and a tube cap 5 is welded on the tube seat in an energy storage welding mode, so that a device in the inner cavity of the photoelectric detector is in a sealed environment.
As shown in fig. 2, the first photo chip 2 is an InGaAs photodiode chip with a response band in the range of 800nm to 2000 nm; the chip adopts an InP substrate sheet, and a typical PIN photodiode structure is formed in a diffusion mode. A circular first photosurface 23 is arranged by taking the right center of the first photoelectric chip 2 as the center of a circle. The first P electrode 21 of the first photo chip 2 and the metal pad of the first N electrode are both disposed on the plane of the first photo chip 2 having the photo-sensitive surface, and the metal pad of the first P electrode is connected to the first photo-sensitive surface 23.
As shown in fig. 4, the second photoelectric chip 4 is a Si photoelectric diode chip, and a second photosurface 43 is disposed on the second photoelectric chip 4; the metal pads of the second P-electrode 41 and the second N-electrode 42 are both disposed on the plane having the photosensitive surface of the second microchip 4, and the metal pad of the second N-electrode 42 is disposed in the second photosensitive region 43, and the second P-electrode is disposed outside the second photosensitive region 43; and conducting a second P electrode and a second N electrode of the second photoelectric chip with a high binding post of the tube seat by adopting a lead.
The response wave band of the second photoelectric chip 4 is 300 nm-1100 nm; and polishing and thinning the lower plane of the second photoelectric chip 4, so that the attenuation of the long-wave light penetrating through the second photoelectric chip 4 is reduced, and the long-wave light can be incident on the first photoelectric chip 2. The thickness of the second photoelectric chip 4 is within 200 μm.
As shown in fig. 3, the ceramic substrate 3 is a hollow stool structure, and four supporting legs 32 are located below four top corners of the ceramic substrate 3; the center of the top plane of the ceramic substrate 3 is provided with a central through hole 31; the light waves may be irradiated onto the first photo chip 2 through the central through hole 31.
Preferably, the central through hole 31 has a square structure.
A rectangular annular groove is formed in the upper plane of the ceramic substrate 3, a through hole is formed in a four-side protruding structure of the rectangular groove, and lead-out wires of electrodes of the second photoelectric chip penetrate through the through hole to be conducted with a binding post of the tube seat.
Optimally, the size of the ceramic substrate 3 is 4mm multiplied by 1.56 mm; the optimal size of the central through hole 31 is 1.8mm × 1.8 mm; the optimal size of the 4 support pins is 1mm x 1.2 mm.
As shown in fig. 5, the tube socket 1 has a stepped cylindrical structure, and a radial positioning pin 16 for positioning a clamp is arranged on a side surface of the tube socket 1; the tube seat 1 is provided with four binding posts, and the four binding posts are electrically isolated from the tube seat 1 through insulating materials; the four binding posts include: a first low terminal 11, a second low terminal 12, a first high terminal 13, and a second high terminal 14. The bottom of the tube seat 1 is provided with a pin 15; the number of the pins 15 is the same as that of the binding posts, and each pin is conducted with the binding post through a conducting wire in the tube seat 1.
The height difference between the first high binding post 13 and the second high binding post 14 and the height difference between the first low binding post 11 and the second low binding post 12 are 0.50 mm-1.00 mm; preferably, the height difference between the high post and the low post is 0.75 mm.
As shown in fig. 6, the first optoelectronic chip 2 is fixed to the center of the upper surface of the stem 1 by using an insulating adhesive or a conductive adhesive; the first P electrode 21 of the first photoelectric chip 2 is conducted with the first low terminal 11 of the stem 1 through a wire, and the first N electrode 22 is conducted with the second low terminal 12, so as to form a pair of PN junctions. Connecting the ceramic substrate 3 with the tube seat 1 by adopting conductor insulating glue; the supporting legs 32 of the ceramic substrate 3 are located in the blank area of the surface of the device tube seat 1 outside the four sides of the first photoelectric chip 2, the central point of the central through hole 31 vertically corresponds to the central point of the tube seat, and the vertex angle of the central through hole 31 and the vertex angle adjacent to the first photoelectric chip 1 form a 45-degree angle on the horizontal plane.
Fixing the second photoelectric chip 4 on the upper surface of the ceramic tube shell by using insulating glue or conductive glue, wherein the second photosensitive surface 43 of the second photoelectric chip 4 corresponds to the central through hole 31; a second P electrode 41 of the second photoelectric chip is connected with a first high binding post 13 of the tube seat 1 by adopting a lead, and a second N electrode 42 is connected with a second high binding post 14 to form a pair of PN nodes; when conducting wire connection, pass through the rectangle annular groove of ceramic tube shell with the wire to pass the through-hole, solved when carrying out wire connection because of the wire overlength wrong problem of connection.
As shown in fig. 7, the pipe cap 5 is a hollow cylinder structure; the upper plane of the tube cap is provided with an optical window 51, the center of the optical window 51 corresponds to the center of the tube seat 1, and the surface of the optical window 51 is coated with an antireflection film to enhance the light transmission and reduce the attenuation of detection signals.
The optical window 51 is coated with a photovoltaic anti-reflective film AR-Coating that increases the light transmittance of the optical window.
A method for manufacturing a near-infrared and visible light wide-spectrum photoelectric detector comprises the following steps:
step 1: and removing the oxide on the surface of the first photoelectric chip 2 by adopting a vulcanization mode and a He ion beam bombardment mode.
Step 2: fixing the first photoelectric chip 2 in the middle of the base of the tube seat by using insulating glue;
and step 3: the P, N electrodes on the first photoelectric chip 2 fixed on the base are respectively connected with the corresponding first low binding post 11 and second low binding post 12 on the tube seat by gold wire ball bonding;
and 4, step 4: fixing the ceramic substrate 3 in the center of the base of the tube seat by using insulating glue, wherein a supporting leg 32 of the ceramic substrate is positioned in the area outside the first photoelectric chip 2 on the surface of the base of the tube seat, a lead of the first photoelectric chip 2 penetrates out of a cavity between the two supporting legs of the ceramic substrate, and a central through hole 31 in the center of the ceramic substrate is concentric with a first photoelectric chip photosurface 23 below the central through hole;
and 5: fixing the second photoelectric chip 4 on the central position of the surface of the ceramic substrate by using insulating glue;
step 6: the P, N electrodes on the second photoelectric chip 4 fixed on the ceramic substrate 3 are respectively connected with the first high binding post 13 and the second high binding post 14 on the tube seat 1 by adopting a gold wire ball welding mode;
and 7: and sealing the tube cap 5 and the tube seat 1 by adopting an energy storage welding mode to ensure that the chip on the tube seat 1 and the ceramic substrate 3 are in an airtight environment.
The preferred process of the surface deoxidation treatment of the first photoelectric chip 1 is as follows: and removing the oxide which is easy to adhere to the surface of the InGaAs chip material by adopting an ammonium sulfide solution water bath and He ion beam bombardment. Preferably, the mixture ratio of the ammonium sulfide solution is 1:40, the water bath temperature is 65 ℃, and the time is 20 minutes; ion beam bombardment conditions: gas composition He, power 180W, time 280 s.
A second photoelectric chip 4 with N-type doped crystal orientation<100>The silicon epitaxial material has a substrate layer resistivity of 0.01 omega cm, a thickness of 650 +/-5 mu m, an epitaxial layer resistivity of 250 to 300 omega cm and a thickness of 20 +/-1 mu m. And forming a silicon dioxide layer on the surface of the second photoelectric chip 4 by adopting a furnace tube gate oxide method, wherein the silicon dioxide layer is used as a passivation layer and a barrier layer. The process conditions are that the temperature is 1000 +/-2 ℃ and the time is 60 minutes; doping the protective ring region by adopting a high-dose implantation process, wherein the implantation condition is boron atoms, the implantation energy is 150KeV, and the implantation dose is 1E16atom/cm2Wherein atom represents nuclear energy, E represents ground-state hydrogen atomic energy, and E ═ 13.6 eV; and doping the second photosensitive surface 23 by adopting a low-energy injection process, and using the surface gate oxide layer as an injection buffer layer to realize the purpose of doping the ultra-shallow junction. The implantation conditions are boron difluoride ions, the implantation energy is 20KeV, and the implantation dosage is 2E14 atom/cm2(ii) a A magnetron sputtering metal deposition process is adopted to deposit a Ti/Al double-layer metal film on the surface of the device for manufacturing a metal electrode. The technological conditions are that a Ti layer is deposited at the temperature of 200 ℃ for 30nm, and then an Al layer is deposited for 1 mu m; and thinning and polishing the back surface of the device by adopting a CMP (chemical mechanical polishing) process. The process conditions were thinning to 210 μm and then polishing to 10 μm.
The invention can be replaced by a method for designing a carrier metallization pattern and replacing a raw material. Such as:
(1) the electrical parameter performance, the appearance structure and the pin output definition of the die can be changed by changing the design of the size of a photodiode chip, the size of an optical window, the size of a device and the like;
(2) other dielectric substrate materials with similar parameter characteristics can be adopted to replace the ceramic substrate as a chip carrier;
(3) chips with other response ranges can be adopted to realize other wide-spectrum detectors with different response wave bands.
In the description of the present invention, it is to be understood that the terms "coaxial", "bottom", "one end", "top", "middle", "other end", "upper", "one side", "top", "inner", "outer", "front", "center", "both ends", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "disposed," "connected," "fixed," "rotated," and the like are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; the terms may be directly connected or indirectly connected through an intermediate, and may be communication between two elements or interaction relationship between two elements, unless otherwise specifically limited, and the specific meaning of the terms in the present invention will be understood by those skilled in the art according to specific situations.
The above-mentioned embodiments, which further illustrate the objects, technical solutions and advantages of the present invention, should be understood that the above-mentioned embodiments are only preferred embodiments of the present invention, and should not be construed as limiting the present invention, and any modifications, equivalents, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A near-infrared and visible wide-spectrum photodetector, comprising: the device comprises a tube seat (1), a first photoelectric chip (2), a ceramic substrate (3), a second photoelectric chip (4) and a tube cap (5);
the first photoelectric chip (2) is fixed on the top plane of the tube seat (1); the ceramic substrate (3) is fixed on the tube seat (1), and the first photoelectric chip (2) is positioned right below the ceramic substrate (3); the second photoelectric chip (4) is fixed on the upper surface of the ceramic substrate (3); electrodes of the first photoelectric chip (2) and the second photoelectric chip (4) are connected with a binding post of the tube seat (1) through a lead; and a pipe cap (5) is welded on the pipe seat in an energy storage welding mode, so that a device in the inner cavity of the photoelectric detector is in a sealed environment.
2. The wide-spectrum photodetector for near-infrared and visible light according to claim 1, characterized in that the base (1) is a stepped cylindrical structure, and the side of the base (1) is provided with radial positioning pins (16) for positioning the clamp.
3. The wide-spectrum photodetector of near-infrared and visible light according to claim 1, characterized in that the base (1) is provided with four binding posts, which are electrically isolated from the base (1) by an insulating material; the four binding posts include: a first low terminal (11), a second low terminal (12), a first high terminal (13), and a second high terminal (14).
4. The wide-spectrum photodetector of near-infrared light and visible light according to claim 3, wherein the height difference between the first high terminal (13) and the second high terminal (14) and the height difference between the first low terminal (11) and the second low terminal (12) are 0.50mm to 1.00 mm.
5. The wide-spectrum photodetector for near infrared light and visible light as claimed in claim 1, wherein the first photoelectric chip (2) is made of InGaAs semiconductor material, the first P electrode (21) and the metal pad of the first N electrode (22) of the chip are both located on the same side of the first photosensitive surface (23) of the chip, and the metal pad of the first P electrode (21) is connected to the first photosensitive surface (23).
6. The wide-spectrum photodetector for near infrared light and visible light according to claim 1, wherein the ceramic substrate (3) is a hollow stool structure, and supporting legs (32) are respectively arranged below four top corners of the ceramic substrate (3); the center of the ceramic substrate (3) is provided with a central through hole (31); the upper surface of the ceramic substrate (3) is provided with a metal convex layer for supporting the second photoelectric chip (4).
7. The broad spectrum photodetector for near infrared and visible light according to claim 6, characterized in that the central through hole (31) is square.
8. The wide-spectrum photodetector of near infrared and visible light according to claim 1, wherein the second photo chip (4) is made of Si semiconductor material, the metal pads of the second P-electrode (41) and the second N-electrode (42) are disposed on the plane of the second photo chip (4) having the photo-sensitive surface, and the second P-electrode and the second N-electrode of the second photo chip are connected to the high terminal of the stem by leads; and the bottom of the second photoelectric chip (4) is processed by adopting a thinning and polishing process, so that the near infrared light can penetrate through the second photoelectric chip (4) and be projected onto the first photoelectric chip (2).
9. The wide-spectrum photodetector for near-infrared and visible light according to claim 1, characterized in that the cap (5) is a hollow cylinder structure; the upper surface of the pipe cap (5) is provided with an optical window (51); the center of the optical window (51) corresponds to the center of the tube seat (1), and an antireflection film is plated on the surface of the optical window (51), so that the light transmission of the optical window (51) is enhanced, and the attenuation rate of a detection signal is reduced.
10. A method for manufacturing a wide-spectrum photoelectric detector for near-infrared light and visible light is characterized by comprising the following steps:
step 1: removing oxides on the surface of the first photoelectric chip (2) by adopting a vulcanization mode and a He ion beam bombardment mode;
step 2: fixing the first photoelectric chip (2) in the middle of the base of the tube seat by using insulating glue;
and step 3: p, N electrodes on a first photoelectric chip (2) fixed on the base are respectively connected with a corresponding first low binding post (11) and a second low binding post (12) on the tube seat by adopting a gold wire ball bonding mode;
and 4, step 4: fixing a ceramic substrate (3) in the center of a tube seat base by using insulating glue, wherein a ceramic substrate supporting leg (32) is positioned in the area outside a first photoelectric chip (2) on the surface of the tube seat base, a lead of the first photoelectric chip (2) penetrates out of a cavity between two supporting legs of the ceramic substrate, and a central through hole (31) in the center of the ceramic substrate is concentric with a first photoelectric chip photosensitive surface (23) below the central through hole;
and 5: fixing the second photoelectric chip (4) on the central position of the surface of the ceramic substrate by using insulating glue;
step 6: p, N electrodes on a second photoelectric chip (4) fixed on the ceramic substrate (3) are respectively connected with a first high binding post (13) and a second high binding post (14) on the tube seat (1) by adopting a gold wire ball bonding mode;
and 7: the tube cap (5) and the tube seat (1) are sealed by adopting an energy storage welding mode, so that the chip on the tube seat (1) and the ceramic substrate (3) are in an airtight environment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010893490.8A CN111987076B (en) | 2020-08-31 | 2020-08-31 | Near infrared light and visible light wide spectrum photoelectric detector and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010893490.8A CN111987076B (en) | 2020-08-31 | 2020-08-31 | Near infrared light and visible light wide spectrum photoelectric detector and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111987076A true CN111987076A (en) | 2020-11-24 |
| CN111987076B CN111987076B (en) | 2023-06-16 |
Family
ID=73440241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010893490.8A Active CN111987076B (en) | 2020-08-31 | 2020-08-31 | Near infrared light and visible light wide spectrum photoelectric detector and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111987076B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112838468A (en) * | 2021-01-04 | 2021-05-25 | 武汉光迅科技股份有限公司 | TO packaging structure |
| CN113098479A (en) * | 2021-03-10 | 2021-07-09 | 电子科技大学 | Voltage type photoelectric converter, device and method |
| CN113098477A (en) * | 2021-03-10 | 2021-07-09 | 电子科技大学 | Current type photoelectric converter, device and method |
| CN115763577A (en) * | 2022-11-29 | 2023-03-07 | 山东中科际联光电集成技术研究院有限公司 | Temperature control anti-overload optical assembly |
| CN115911139A (en) * | 2022-11-29 | 2023-04-04 | 山东中科际联光电集成技术研究院有限公司 | Overload-resistant light receiving module |
Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060091290A1 (en) * | 2004-10-26 | 2006-05-04 | Ikuo Yoshihara | Semiconductor image sensor module, method for manufacturing the same as well as camera and method for manufacturing the same |
| TW200639911A (en) * | 2005-05-06 | 2006-11-16 | Harvatek Corp | Manufacturing method for two pieces substrate package structures of photoelectric chip with controlling chip |
| US20060280056A1 (en) * | 2005-06-06 | 2006-12-14 | Sharp Kabushiki Kaisha | Optical integrated module and optical pick up device |
| CN200977333Y (en) * | 2006-11-27 | 2007-11-21 | 山东皇冠控股集团有限公司 | Conductive ceramic infrared ray radioactive substrate plate optical wave bathroom |
| US20080123265A1 (en) * | 2005-09-14 | 2008-05-29 | Funworld Ag | Device for reproducing information for entertaining or data processing |
| CN201741709U (en) * | 2010-05-07 | 2011-02-09 | 厦门三优光机电科技开发有限公司 | 3GHz bandwidth photoelectric detector |
| JP2011176533A (en) * | 2010-02-24 | 2011-09-08 | Omron Corp | Acoustic sensor |
| JP2013099254A (en) * | 2010-11-25 | 2013-05-23 | Sharp Corp | Led light source for plant cultivation and plant factory |
| US20130188354A1 (en) * | 2010-07-19 | 2013-07-25 | Huizhou Light Engine Limited (a Chinese limited company) | Phosphor coating films and lighting apparatuses using the same |
| CN203250738U (en) * | 2013-03-29 | 2013-10-23 | 中国电子科技集团公司第四十四研究所 | Two-quadrant photodiode |
| CN103715292A (en) * | 2014-01-02 | 2014-04-09 | 南开大学 | High-gain visible and near-infrared silicon-based photoelectric detector and preparation method thereof |
| CN104538480A (en) * | 2015-01-04 | 2015-04-22 | 中国电子科技集团公司第四十四研究所 | Integrated structure for inversely installing high-speed InGaAs photoelectric detector chip and manufacturing method |
| CN104697556A (en) * | 2015-02-28 | 2015-06-10 | 武汉联钧科技有限公司 | Double-waveband photoelectric sensor |
| CN204614790U (en) * | 2015-05-08 | 2015-09-02 | 重庆鹰谷光电有限公司 | A kind of microminiaturized ceramic cartridge photodetector encapsulating structure |
| CN106531822A (en) * | 2016-11-29 | 2017-03-22 | 电子科技大学 | Photoelectric detector |
| US20190103530A1 (en) * | 2017-09-29 | 2019-04-04 | KAISTAR Lighting (Xiamen) Co., Ltd | Packaging frame and manufacturing method of packaging frame |
| WO2020088501A1 (en) * | 2018-10-30 | 2020-05-07 | 国科光芯(海宁)科技股份有限公司 | Packaging method for phased optical waveguide chip |
| CN111360434A (en) * | 2019-12-30 | 2020-07-03 | 西南技术物理研究所 | Method for manufacturing pipe cap welded by using glass solder |
-
2020
- 2020-08-31 CN CN202010893490.8A patent/CN111987076B/en active Active
Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060091290A1 (en) * | 2004-10-26 | 2006-05-04 | Ikuo Yoshihara | Semiconductor image sensor module, method for manufacturing the same as well as camera and method for manufacturing the same |
| TW200639911A (en) * | 2005-05-06 | 2006-11-16 | Harvatek Corp | Manufacturing method for two pieces substrate package structures of photoelectric chip with controlling chip |
| US20060280056A1 (en) * | 2005-06-06 | 2006-12-14 | Sharp Kabushiki Kaisha | Optical integrated module and optical pick up device |
| US20080123265A1 (en) * | 2005-09-14 | 2008-05-29 | Funworld Ag | Device for reproducing information for entertaining or data processing |
| CN200977333Y (en) * | 2006-11-27 | 2007-11-21 | 山东皇冠控股集团有限公司 | Conductive ceramic infrared ray radioactive substrate plate optical wave bathroom |
| JP2011176533A (en) * | 2010-02-24 | 2011-09-08 | Omron Corp | Acoustic sensor |
| CN201741709U (en) * | 2010-05-07 | 2011-02-09 | 厦门三优光机电科技开发有限公司 | 3GHz bandwidth photoelectric detector |
| US20130188354A1 (en) * | 2010-07-19 | 2013-07-25 | Huizhou Light Engine Limited (a Chinese limited company) | Phosphor coating films and lighting apparatuses using the same |
| JP2013099254A (en) * | 2010-11-25 | 2013-05-23 | Sharp Corp | Led light source for plant cultivation and plant factory |
| CN203250738U (en) * | 2013-03-29 | 2013-10-23 | 中国电子科技集团公司第四十四研究所 | Two-quadrant photodiode |
| CN103715292A (en) * | 2014-01-02 | 2014-04-09 | 南开大学 | High-gain visible and near-infrared silicon-based photoelectric detector and preparation method thereof |
| CN104538480A (en) * | 2015-01-04 | 2015-04-22 | 中国电子科技集团公司第四十四研究所 | Integrated structure for inversely installing high-speed InGaAs photoelectric detector chip and manufacturing method |
| CN104697556A (en) * | 2015-02-28 | 2015-06-10 | 武汉联钧科技有限公司 | Double-waveband photoelectric sensor |
| CN204614790U (en) * | 2015-05-08 | 2015-09-02 | 重庆鹰谷光电有限公司 | A kind of microminiaturized ceramic cartridge photodetector encapsulating structure |
| CN106531822A (en) * | 2016-11-29 | 2017-03-22 | 电子科技大学 | Photoelectric detector |
| US20190103530A1 (en) * | 2017-09-29 | 2019-04-04 | KAISTAR Lighting (Xiamen) Co., Ltd | Packaging frame and manufacturing method of packaging frame |
| WO2020088501A1 (en) * | 2018-10-30 | 2020-05-07 | 国科光芯(海宁)科技股份有限公司 | Packaging method for phased optical waveguide chip |
| CN111360434A (en) * | 2019-12-30 | 2020-07-03 | 西南技术物理研究所 | Method for manufacturing pipe cap welded by using glass solder |
Non-Patent Citations (2)
| Title |
|---|
| 董绪丰;柴松刚;李睿智: "波长拓展型可见-近红外双色光电探测器", 《电子技术》 * |
| 董绪丰;柴松刚;李睿智: "波长拓展型可见-近红外双色光电探测器", 《电子技术》, 20 July 2020 (2020-07-20), pages 1 - 3 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112838468A (en) * | 2021-01-04 | 2021-05-25 | 武汉光迅科技股份有限公司 | TO packaging structure |
| CN113098479A (en) * | 2021-03-10 | 2021-07-09 | 电子科技大学 | Voltage type photoelectric converter, device and method |
| CN113098477A (en) * | 2021-03-10 | 2021-07-09 | 电子科技大学 | Current type photoelectric converter, device and method |
| CN115763577A (en) * | 2022-11-29 | 2023-03-07 | 山东中科际联光电集成技术研究院有限公司 | Temperature control anti-overload optical assembly |
| CN115911139A (en) * | 2022-11-29 | 2023-04-04 | 山东中科际联光电集成技术研究院有限公司 | Overload-resistant light receiving module |
| CN115911139B (en) * | 2022-11-29 | 2023-10-27 | 山东中科际联光电集成技术研究院有限公司 | Overload-resistant light receiving assembly |
| CN115763577B (en) * | 2022-11-29 | 2023-10-27 | 山东中科际联光电集成技术研究院有限公司 | Temperature-control overload-resistant optical assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111987076B (en) | 2023-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111987076B (en) | Near infrared light and visible light wide spectrum photoelectric detector and manufacturing method thereof | |
| US4127932A (en) | Method of fabricating silicon photodiodes | |
| US6504178B2 (en) | Indirect back surface contact to semiconductor devices | |
| JP3257687B2 (en) | Electro-optical detector array and method of manufacturing the same | |
| KR100300923B1 (en) | Optoelectronic Sensor Parts | |
| EP0616373A2 (en) | Photoelectric conversion semiconductor device and method of manufacturing the same | |
| WO2009086289A2 (en) | Solar cell package for solar concentrator | |
| EP2294631A2 (en) | A monolithic low concentration photovoltaic panel based on polymer embedded photovoltaic cells and crossed compound parabolic concentrators | |
| US20100276772A1 (en) | Photoelectric conversion device and method of manufacturing photoelectric conversion device | |
| US4673770A (en) | Glass sealed silicon membrane solar cell | |
| US11387271B2 (en) | Optical sensor with trench etched through dielectric over silicon | |
| CN114068755A (en) | Avalanche photodiode and manufacturing method thereof | |
| RU2355066C2 (en) | Electromagnetic emission converter | |
| CN100424879C (en) | Deep-submicron CMOS process inductively compensated photoelectric detector and its manufacturing method | |
| CN115939153A (en) | Photoelectron integrated chip and preparation method thereof | |
| CN206850221U (en) | A kind of vertical-cavity surface-emitting coaxial packaging photoelectric device | |
| CA1078948A (en) | Method of fabricating silicon photodiodes | |
| CN209282210U (en) | A kind of photodiode | |
| RU2611552C2 (en) | Photodetector (versions) and production method thereof | |
| CN110611000A (en) | Back-in avalanche photodetector chip and manufacturing method thereof | |
| JPS5825283A (en) | Photodetector | |
| CN115295662B (en) | Avalanche photodetector and preparation method thereof | |
| CN109904241B (en) | Photodiode and manufacturing method thereof | |
| KR100654014B1 (en) | Photo diode having electrode structure for large optical signal receiving area | |
| CN217387174U (en) | Light receiving diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |