CN209282210U - A kind of photodiode - Google Patents
A kind of photodiode Download PDFInfo
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- CN209282210U CN209282210U CN201920293851.8U CN201920293851U CN209282210U CN 209282210 U CN209282210 U CN 209282210U CN 201920293851 U CN201920293851 U CN 201920293851U CN 209282210 U CN209282210 U CN 209282210U
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Abstract
The application provides a kind of photodiode, including cathode, anode, substrate, the first clear opening and the second clear opening, the first clear opening penetrate substrate, and anode is guided to the back side of substrate, and the second clear opening penetrates substrate, and cathode is guided to the back side of substrate.Photodiode provided by the embodiments of the present application has the advantages that quick response and photoelectric conversion quantum efficiency are high simultaneously.
Description
Technical field
This application involves but be not limited to diode field, especially a kind of photodiode.
Background technique
The working mechanism of photodiode is as follows: the light action of certain wavelength enters in semiconductor PN (PN junction)
The energy for penetrating photon is greater than or equal to the forbidden bandwidth of semiconductor material, inspires nonequilibrium electron hole pair (the i.e. light of photoproduction
Raw carrier), the effect of electromotive force is generated on barrier region both sides, external circuits is connected and is changed into current signal.Two pole of photoelectricity
Pipe can be used as the core component of X-ray detector, main to complete photoelectric signal transformation function；X-ray detector passes through correlation
Reading circuit, detecting module and analysis software, carry out signal sampling, analysis and digitized video output, be widely used in safety check,
The fields such as food inspection, medical treatment, industrial nondestructive testing.
Utility model content
The embodiment of the present application provides a kind of photodiode, while having quick response and photoelectric conversion quantum efficiency high
The advantages of.
The embodiment of the present application provides a kind of photodiode, comprising: anode, cathode, substrate, the first clear opening and
The front of the substrate is arranged in two clear openings, the anode and the cathode, and first clear opening penetrates the substrate, will
The anode guides to the back side of the substrate, and second clear opening penetrates the substrate, and the cathode is guided to the substrate
The back side.
Photodiode provided by the embodiments of the present application is realized by the first clear opening and the second clear opening in photoelectricity two
The design of the front irradiation, back side lead packages of pole pipe；Photodiode provided by the embodiments of the present application has quick sound simultaneously
Advantage that should be high with photoelectric conversion quantum efficiency, and low manufacture cost, are conducive to large-scale production.In addition, the application is implemented
The photodiode work high reliablity that example provides, substantially increases the practicability of the photodiode.
Other features and advantage will illustrate in the following description, also, partly become from specification
It obtains it is clear that being understood and implementing the application.The purpose of the application and other advantages can be by specifications, right
Specifically noted structure is achieved and obtained in claim and attached drawing.
Detailed description of the invention
Attached drawing is used to provide to further understand technical scheme, and constitutes part of specification, with this
The embodiment of application is used to explain the technical solution of the application together, does not constitute the limitation to technical scheme.
Fig. 1 is a kind of front plan view of photodiode provided by the embodiments of the present application；
Fig. 2 is a kind of back side top view of photodiode provided by the embodiments of the present application；
Fig. 3 is sectional illustrations figure of the photodiode shown in FIG. 1 along the direction A-A；
Fig. 4 is sectional illustrations figure of first clear opening along the direction A-A of the photodiode in Fig. 1；
Fig. 5 is a kind of flow chart of the manufacturing method of photodiode provided by the embodiments of the present application；
Fig. 6 is a kind of exemplary process diagram of the manufacturing method of photodiode provided by the embodiments of the present application.
It illustrates:
The first clear opening of 11-, the second clear opening of 12-, 13- separation layer, 14- electric connection layer, 15- filled layer, 2- substrate,
21- the first type doped region, 22- second type doped region, 23- substrate layer, 31- anode, 32- cathode, the first sheet metal of 41-, 42-
Two sheet metals, the first protective layer of 51-, the second protective layer of 52-, 61- pixel region, 62- metal routing area.
Specific embodiment
For the purposes, technical schemes and advantages of the application are more clearly understood, below in conjunction with attached drawing to the application
Embodiment be described in detail.It should be noted that in the absence of conflict, in the embodiment and embodiment in the application
Feature can mutual any combination.
Photodiode can be mainly divided into preceding illuminated (Front Side Illumination, FSI) and backlight formula
(Back Side Illumination, BSI).FSI photodiode has mass production ability, high reliability and high yield
And the advantages such as cost performance for having much attraction.However, the chip design of FSI photodiode needs larger space for metal
Cabling and input and output metal pad (I/O PAD) connection, this segment space are known as " dead zone "；" dead zone " can not carry out photoelectricity and turn
It changes, the photoelectric conversion quantum efficiency (QE, Quantum Efficiency) of FSI photodiode is caused to be restricted；Moreover, right
In the application for needing large scale detector, due to the presence in edge " dead zone ", cause FSI photodiode chip cannot four
Face splicing, is restricted in practical applications.Although BSI photodiode can eliminate " dead zone " effect, with FSI photoelectricity two
Pole pipe is compared, and for BSI photodiode there are bad mechanical strength, the response time (Response Time) is long, crosstalk is big and manufacture at
The problems such as this is high.
The embodiment of the present application provides a kind of photodiode and its manufacturing method, passes through and combines TSV (Through
Silicon Vias, clear opening), the design in the front irradiation, back side lead packages of photodiode is realized, to improve light
The response speed and photoelectric conversion quantum efficiency of electric diode, and promote the practicability of photodiode.
The embodiment of the present application provides a kind of photodiode, comprising: anode, cathode, substrate, the first clear opening and second
Clear opening；Wherein, the front of substrate is arranged in anode and cathode, and the first clear opening penetrates substrate, and anode is guided to the back of substrate
Face；Second clear opening penetrates substrate, and cathode is guided to the back side of substrate.In this way, photodiode provided in this embodiment
Front irradiation, back side lead packages may be implemented.
In one exemplary embodiment, separation layer, electric connection can be filled in the first clear opening and the second clear opening
Layer and filled layer；Electric connection layer is located at the inside of separation layer, and filled layer is located at the inside of electric connection layer；In other words, exist
In first clear opening and the second clear opening, set gradually outward from the center in hole as filled layer, electric connection layer and separation layer.
The electric connection layer of the electric connection layer jointed anode of first clear opening, the second clear opening connects cathode.
In one exemplary embodiment, substrate may include: substrate layer, the first type doped region and second type doped region；
Anode includes the first metalwork, and cathode includes the second metalwork；The surface of first type doped region connects the first metalwork, second type
The surface of doped region connects the second metalwork.
In one exemplary embodiment, substrate layer can be N-type substrate layer, and the first type doped region can be P-doped zone,
Second type doped region can be N-doped zone.However, the application does not limit this.In other embodiments, substrate layer can be with
For P type substrate layer, at this point, the first type doped region can be N-doped zone, second type doped region can be P-doped zone.
In one exemplary embodiment, photodiode can also include: the first protective layer, and the first protective layer covers substrate
Front, cathode and anode.For example, the first protective layer can be antireflection and passivation protection layer.
In one exemplary embodiment, photodiode can also include: the first sheet metal and the second sheet metal, the first gold medal
Belong to piece and the back side of substrate is arranged in the second sheet metal, the first sheet metal passes through the first clear opening jointed anode, the second sheet metal
Cathode is connected by the second clear opening.By the first sheet metal and the second sheet metal being arranged in substrate back, sun may be implemented
Pole signal and cathode signal are overleaf connect with external signals such as substrates.
In one exemplary embodiment, photodiode can also include: the second protective layer, and the second protective layer covers substrate
The back side, a part of the first sheet metal and a part of the second sheet metal.However, the application does not limit this.At it
In his implementation, the second protective layer can cover the whole of the first sheet metal and the second sheet metal.Illustratively, the second protection
Layer can be antireflection and passivation protection layer.
Fig. 1 is a kind of front plan view for photodiode that the application exemplary embodiment provides；Fig. 2 shows for the application
The back side top view for the photodiode that example property embodiment provides；Fig. 3 is photodiode shown in FIG. 1 cuing open along the direction A-A
Face schematic diagram.It should be noted that Fig. 3 only illustrates a part of photodiode to illustrate along the cross-section structure in the direction A-A, it is not complete
The whole cross-section structure for being painted monolith photodiode chip in Fig. 1；Fig. 4 leads directly to for the application exemplary embodiment provides first
The structural schematic diagram in hole and the second clear opening.
As shown in figure 3, the application exemplary embodiment provides a kind of photodiode, comprising: anode 31, cathode 32, lining
Bottom 2, the first clear opening 11 and the second clear opening 12；Wherein, the front of substrate 2 is arranged in cathode 32 and anode 31, and first is straight
Through-hole 11 penetrates substrate 2, and anode 31 is guided to the back side of substrate 2, and the second clear opening 12 penetrates substrate 2, and cathode 32 is guided to lining
The back side at bottom 2.The cathode and anode of wafer frontside will can be arranged in originally by the first clear opening 11 and the second clear opening 12
The back side is gone to, effective area of the wafer frontside for photoelectric conversion can be improved.
As shown in Figure 1, chip (photodiode) front small cube is area pixel (pixel) 61, the side length of pixel region 61
About 1mm (area is about 1mm2), the circular hole on pixel region 61 is the first clear opening 11, is penetrated into the back side from wafer frontside, the
Anode signal can be guided to the back side from front by one clear opening 11, and chip back can be mounted on substrate with upside-down mounting (Flip Chip)
On.It is metal routing area 62 between pixel region 61, the infall in metal routing area 62 is provided with cathode 32, setting the at cathode 32
Two clear openings 12, for cathode signal to be guided to the back side from front.In this way, which anode signal and cathode signal are all easy to accomplish
It is connect with external circuit, and the front irradiation region of photodiode can be improved, avoided as existing FSI photodiode one
Portion leads to the presence of " dead zone " shadow there are the metallic circuit of relative redundancy and chip both ends input/output metal plate to sample in the chip
Ring the use of photodiode.In practical applications, the size of chip and pixel region 61 can be reduced according to different application demand
Or extension.Chip front side is in addition to there are straight-through hole sites, other can be used to receive illumination, so that it is guaranteed that higher photoelectricity turns
Change quantum efficiency.
In the present example embodiment, as shown in figure 3, substrate 2 may include N-type substrate layer 23, P-doped zone 21 and
N-doped zone 22.Wherein, anode 31 may include the first metalwork；In the front of N-type substrate layer 23 by being heavily doped to as P
Type semiconductor, connecting the first metalwork on P-type semiconductor surface becomes anode.Cathode 32 may include the second metalwork；In N-type
N-doped zone is formed by heavy doping on substrate layer, and connect the second metalwork on its surface to become cathode.This exemplary implementation
In example, depletion region near surface, N-type substrate layer 23 of the incident light mainly below P-doped zone 21, depletion region and depletion region is inhaled
It receives and generates in photo-generated carrier (electronics and hole), photo-generated carrier can be diffused into depletion region with the shorter time, so response
Time (response time) is low compared to a possibility that faster, diffusion to adjacent cells, and crosstalk is smaller.
In the present example embodiment, Fig. 4 is that section of first clear opening along the direction A-A in the present exemplary embodiment shows
Example diagram.It should be noted that the structure of the second clear opening is similar with the structure of the first clear opening, therefore it is with the first clear opening herein
Example is illustrated.As shown in figure 4, separation layer 13, the electric connection in 13 inside of separation layer can be filled in the first clear opening 11
Layer 14 and the filled layer 15 on the inside of electric connection layer 14.Wherein, separation layer 13 is also known as TSV dielectric layer, can be used for being isolated
Electronic current etc. in substrate 2 makes the first clear opening from the interference of other parts, improves the reliable operation of photodiode
Property.The inside of separation layer 13 is arranged in electric connection layer 14, as shown in figure 4, on the section along the direction A-A, electric connection layer
14 can be in " several " font.The centre of electric connection layer 14 is arranged in filled layer 15, and clear opening construction machine can be improved and stablize
Property and functional reliability, impact photodiode.
In the present example embodiment, as shown in Figures 2 and 3, photodiode can also include: 41 He of the first sheet metal
The back side of substrate 2 is arranged in second sheet metal 42, the first sheet metal 41 and the second sheet metal 42, and the first sheet metal 41 passes through first
11 jointed anode 31 of clear opening, the second sheet metal 42 connect cathode 32 by the second clear opening 12.
Shown in referring to Figure 1 and Figure 3, one end (tops of " several " fonts shown in Fig. 4) of the first clear opening 11 can be with sun
Pole 31 is connected.The extension (lower ends of " several " fonts shown in Fig. 4) of the other end of first clear opening 11 and 2 back side of substrate
First sheet metal 41 is connected (the first sheet metal is covered on to the lower end of " several " font), so that anode 31 be drawn from 2 front of substrate
Subsequent connection is carried out to the back side, and by the first sheet metal 41, for example is connect with external signals such as substrates.Similarly, second is straight
Through-hole 12 can connect the second sheet metal 42 of substrate 2 positive cathode 32 and 2 back side of substrate.The structure of the present embodiment simply may be used
It leans on, increases the photoelectric conversion area of wafer frontside, and keep route clean and tidy, convenient for subsequent attaching etc..
As shown in Fig. 2, the first sheet metal 41 and the second sheet metal 42 can also nearby connect the metal for testing encapsulation
Salient point.However, the application does not limit this.
In the present example embodiment, as shown in figure 3, the front of substrate 2 is covered with the first protective layer 51,2 back side of substrate
It is covered with the second protective layer 52.Wherein, the first protective layer 51 can be antireflection and passivation protection layer, and the second protective layer 52 can be with
For antireflection and passivation protection layer.The application does not limit this.
In the present example embodiment, as shown in figure 3, first sheet metal 41 at the second protective layer 52 covering 2 back side of substrate
With a part of the second sheet metal 42.Each sheet metal is not all covered, and there are exposed parts on each sheet metal, is used for
With the connection of substrate or other circuits.However, the application does not limit this.
Fig. 5 is a kind of flow chart of the manufacturing method of photodiode provided by the embodiments of the present application.As shown in figure 5, this
The manufacturing method for applying for the photodiode that embodiment provides, includes the following steps:
Step 501 provides wafer, and wafer includes anode, cathode and substrate, and substrate includes substrate layer, in substrate layer
The the first type doped region and second type doped region that front is formed by heavy doping；Anode includes the first metalwork, and cathode includes the
Two metalworks, the surface of the first type doped region connect the first metalwork, and the surface of second type doped region connects the second metalwork；
Step 502, processing penetrates the first clear opening of wafer at anode, anode is guided to the back side of wafer, in cathode
Place's processing penetrates the second clear opening of wafer, and cathode is guided to the back side of wafer.
In one exemplary embodiment, the first clear opening for penetrating wafer is processed at anode, may include: at anode
The first clear opening to be formed from the back-to-front of wafer is etched by deep hole；Successively filled in the first clear opening separation layer,
Electric connection layer and filled layer；
Processing penetrates the second clear opening of wafer at cathode, may include: etched at cathode by deep hole to be formed from
Second clear opening of the back-to-front of wafer；Separation layer, electric connection layer and filling are successively filled in the second clear opening
Layer.
In one exemplary embodiment, substrate layer can be N-type substrate layer, and the first type doped region can be P-doped zone,
Second type doped region can be N-doped zone.
Illustrate by manufacturing method of the example to photodiode provided in this embodiment referring to Fig. 6
It is bright.Fig. 6 is the exemplary process diagram of the manufacturing method of photodiode provided by the embodiments of the present application.Pass through system shown in fig. 6
For example available Fig. 1 of method is made to photodiode shown in Fig. 3.
As shown in fig. 6, the manufacturing method for the photodiode that the present exemplary embodiment provides may include front irradiation
Wafer preparation process (step 601 to step 603) and TSV treatment process (step 604).In this example, step 604 it
After step 605 can be implemented, wafer frontside cover the first protective layer, backside of wafer cover the second protective layer, thus into one
Step improves the functional reliability of photodiode.However, the application does not limit this.
In the present example embodiment, in step 604, the process of clear opening may comprise steps of:
Slide glass key and: through key and glue, by bonding wafer on sheet glass or silicon wafer；
Thinning back side: backside of wafer is polished directly；
Deep hole etching: etching is from backside of wafer to positive clear opening；
Filling: separation layer, electric connection layer and center-filled layer are successively filled in clear opening, so that outside along hole center
It is followed successively by filled layer, electric connection layer and separation layer；
Rewiring: metal connecting line is remake in backside of wafer；
It metallizes under salient point: on the basis of copper metal conducting wire, production nickel metal and golden metal.
Wherein, slide glass key and refer at a certain temperature, by ephemeral key and glue, by bonding wafer in certain thickness glass
On piece or silicon wafer, reach thicker overall thickness, be convenient for subsequent process, after the completion of all processes, removes slide glass (glass
Glass piece or silicon wafer).
Backside of wafer is polished directly in thinning back side, remaining about 100 microns of thickness avoids wafer is too thick from being difficult to
Do deep-hole etching process.
Deep hole etches (TSV deep hole etching): etching is from backside of wafer to positive through-hole.For example, Bosch can be used
(Bosch) deep reaction ion etching (deep reactive ion etching, DRIE) etches the selection ratio for photoresist
It is very high, it can reach 100:1.Alternately variation etching and passivation twice step in this step, it can be ensured that through-hole side wall almost Cheng Ping
Straight state, obtained clear opening parameter index meet the requirements.
It fills (TSV filling): after deep hole etching, passing through the works such as chemical vapor deposition (CVD), physical vapour deposition (PVD) (PVD)
Skill successively fills separation layer (TSV dielectric layer), electric connection layer and filled layer in through-hole, realizes that signal connection and machinery are steady
Fixed performance.
Rewiring: metal connecting line is remake at the back side of wafer, so as to outputting and inputting for signal.
It metallizes (under bump metallization, UBM) under salient point: on the basis of original copper metal conducting wire,
Nickel metal and golden metal are made, so as to subsequent encapsulation paster technique.
The manufacturing method of photodiode provided by the embodiments of the present application, technical process is smooth succinct, is easy to implement process
Metaplasia produces.
In description in this application, it should be noted that the orientation of the instructions such as "upper", "lower", " one end ", " other end "
Or positional relationship is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description the application and simplifies description, and
It is not that the structure of indication or suggestion meaning has specific orientation, is constructed and operated in a specific orientation, therefore should not be understood as
Limitation to the application.
In the description of the embodiment of the present application unless specifically defined or limited otherwise, term " connection ", " connected ", " dress
Connect ", " installation " shall be understood in a broad sense, for example, term " connection " may be a fixed connection, may be a detachable connection or one
Connect to body；It can be directly connected, the connection inside two elements can also be can be indirectly connected through an intermediary.
For the ordinary skill in the art, the concrete meaning of above-mentioned term in this application can be understood with concrete condition.
In the description of this specification, term " one embodiment ", " the present embodiment ", " exemplary embodiment " etc. are retouched
State at least one for meaning particular features, structures, materials, or characteristics described in conjunction with this embodiment or example and being contained in the application
In embodiment or example.In the present specification, schematic expression of the above terms be not necessarily referring to identical embodiment or
Example.Moreover, the particular features, structures, materials, or characteristics of description can be in any one or more of the embodiments or examples
It can be combined in any suitable manner.
Although embodiment disclosed by the application is as above, the content only for ease of understanding the application and use
Embodiment is not limited to the application.Technical staff in any the application fields, is taken off not departing from the application
Under the premise of the spirit and scope of dew, any modification and variation, but the application can be carried out in the form and details of implementation
Scope of patent protection, still should be subject to the scope of the claims as defined in the appended claims.
Claims (7)
1. a kind of photodiode characterized by comprising anode, cathode, substrate, the first clear opening and the second clear opening,
The front of the substrate is arranged in the anode and the cathode, and first clear opening penetrates the substrate, by the anode
The back side of the substrate is guided to, second clear opening penetrates the substrate, the cathode is guided to the back side of the substrate.
2. photodiode according to claim 1, which is characterized in that led directly in first clear opening and described second
In hole, it has been sequentially filled filled layer, electric connection layer and separation layer outward along hole center respectively；The electricity of first clear opening
Property articulamentum connect the anode, the electric connection layer of second clear opening connects the cathode.
3. photodiode according to claim 1, which is characterized in that the substrate includes: substrate layer, the doping of the first type
Area and second type doped region；The anode includes the first metalwork, and the cathode includes the second metalwork, and first type is mixed
The surface in miscellaneous area connects first metalwork, and the surface of the second type doped region connects second metalwork.
4. photodiode according to claim 3, which is characterized in that the substrate layer be N-type substrate layer, described first
Type doped region is P-doped zone, and the second type doped region is N-doped zone.
5. photodiode according to claim 1, which is characterized in that the photodiode further include: the first protection
Layer, first protective layer cover positive, the described cathode and the anode of the substrate.
6. photodiode according to claim 1, which is characterized in that the photodiode further include: the first metal
Piece and the second sheet metal, first sheet metal and second sheet metal are arranged at the back side of the substrate, first gold medal
Belong to piece and the anode is connected by first clear opening, second sheet metal connects the yin by second clear opening
Pole.
7. photodiode according to claim 6, which is characterized in that the photodiode further include: the second protection
Layer, second protective layer cover the back side of the substrate, a part of first sheet metal and second sheet metal
A part.
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| CN109904241A (en) * | 2019-03-07 | 2019-06-18 | 地太科特电子制造(北京)有限公司 | A kind of photodiode and its manufacturing method |
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| CN109904241A (en) * | 2019-03-07 | 2019-06-18 | 地太科特电子制造(北京)有限公司 | A kind of photodiode and its manufacturing method |
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