CN100442527C - Light detecter for semiconductor - Google Patents
Light detecter for semiconductor Download PDFInfo
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- CN100442527C CN100442527C CNB2004100985175A CN200410098517A CN100442527C CN 100442527 C CN100442527 C CN 100442527C CN B2004100985175 A CNB2004100985175 A CN B2004100985175A CN 200410098517 A CN200410098517 A CN 200410098517A CN 100442527 C CN100442527 C CN 100442527C
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Abstract
The present invention relates to a structure of a light detector for a semiconductor, which comprises a base plate and a light detecting element, wherein the base plate is in a structure with a circuit, at least, a first metal layer and a second metal layer are formed on the surface of the base plate, and the first metal layer and the second metal layer are electrically connected to the input node and the output node of the corresponding electric signals of a base plate circuit; the light detecting element is a light detecting element of the semiconductor, the bottom end of the light detecting element is connected with the base plate, the light detecting element receives an emitted light source by penetrating a top end.
Description
Technical field
The present invention relates to a kind of light detecter for semiconductor, particularly photodetector is connected on the substrate and forms the structure of flip-chip structure dress.
Background technology
Tradition is sent out in the light detecter for semiconductor structure, and it is directly build crystalline substance and to constitute on a base material.With reference to the conventional art of light detecter for semiconductor structure shown in Figure 3, it forms the structure of a photodetector 402 on substrate 401.Wherein, this photodetector 402 is upwards to form P type layer 402a and a N type layer 402b successively at this substrate 401, this P type layer 402a is P type semiconductor (p-typesemiconductor) material that forms as P type gallium nitride, the exposed side of one forms the P type electrode layer 402c of an ohmic contact, this 403 on N type layer is N type semiconductor (n-type semiconductor) material that forms as n type gallium nitride, and the exposed side of one forms the N type electrode layer 402d of an ohmic contact.Above-mentioned P type electrode layer 402c and N type electrode layer 402d, it is the electric connection point of exporting/going into as the electricity of photodetector 402, and light source is the top incident from photodetector 402, and produces photoelectric current via the photoelectric effect of P type layer 402a and N type layer 402b, thereby reaches the detecting of light source.Yet, in the photodetector of this class, incident light source is P type electrode layer 402c and the N type electrode layer 402d that passes photodetector 402 from the top, makes incident light source can touch each electrode layer earlier, and absorbed by electrode material, cause the reduction of photoelectric current and photoresponse.
Therefore, in order to overcome above-mentioned defective, the shortcoming that the present invention is based on traditional light detecter for semiconductor structure is invented.
Summary of the invention
The present invention is a kind of light detecter for semiconductor, in order to restriction and the shortcoming in one of reality solution or even several above-mentioned correlation techniques.
A purpose of light detecter for semiconductor of the present invention is to form flip-chip (flip chip) structure dress form by photodetector, makes light source can not be subjected to electrode and hinders, and can significantly promote the reception light area, increases the generation chance of photoelectric current.
Another object of the present invention, be to adopt whole metal level to engage when photodetector is connected on the joint of substrate, but not local engagement, only need to cooperate flip chip bonder (Flip Chip Bonder), need not make golden projection (Au bump), make its bond strength to promote, and can further reduce its cost and improve production capacity.
For achieving the above object, the present invention is the light detecter for semiconductor that has the flip-chip assembling structure by a kind of, it comprises: a substrate, it is one to have the structure of circuit, and form a first metal layer and one second metal level at least in the surface, and the first metal layer and second metal level are the corresponding signal of telecommunication output/ingress that is electrically connected to this substrate circuit; And a photodetector, it is the semiconductor photodetector, its bottom is connected on this substrate, and this photodetector is to see through the top to receive incident light source; Wherein, the first metal layer of this substrate and second metal level cooperate with the P type electrode layer and the N type electrode layer of photodetector respectively, and then form electrical connection mutually.
In light detecter for semiconductor, the area of this first metal layer and second metal level respectively to should P type electrode layer and N type electrode layer, and forms big or small corresponding contact area;
In light detecter for semiconductor, the first metal layer of this substrate and second metal level cooperate with the P type electrode layer and the N type electrode layer of photodetector respectively, thereby and then fix this photodetector mutually on this substrate, and form to be electrically connected;
In light detecter for semiconductor, this photodetector is the semiconductor photodetector, and it comprises a P type layer and a N type layer, and this N type layer is positioned at the top of P type layer, this P type layer is that the P type semiconductor material forms, and forms the P type electrode layer of an ohmic contact in the exposed section, bottom; And this N type layer is that the N type semiconductor material forms, and forms the N type electrode layer of an ohmic contact in the exposed section, bottom;
In light detecter for semiconductor, the N type layer of this photodetector directly is exposed to the top;
In light detecter for semiconductor, this photodetector is a gallium nitride based semiconductor light detecting element, and this P type layer is that P type gallium nitride material forms, and this N type layer is that the n type gallium nitride material forms;
In light detecter for semiconductor, this substrate can form a lead frame, in order to being electrically connected to photodetector, thereby provide the signal of telecommunication of this photodetector to export/go into;
In light detecter for semiconductor, between this P type layer and the N type layer, can increase and form a neutral line, this neutral line is that intrinsic material forms;
In light detecter for semiconductor, this neutral line is that neutral gallium nitride material forms.
Purpose of the present invention and function will be more clear after reference the following icon is described further.
Description of drawings
Provide shown in the accompanying drawing as the specific embodiment that specifically presents each element described in this specification, and explain that main purpose of the present invention is to promote understanding of the present invention.
Fig. 1 shows the generalized section of a kind of preferred embodiment of light detecter for semiconductor of the present invention.
Fig. 2 shows the generalized section of the another kind of preferred embodiment of light detecter for semiconductor of the present invention.
Fig. 3 shows the generalized section of conventional semiconductors photodetector.
Among the figure
101: substrate
101a: the first metal layer
101b: second metal level
102: photodetector
102a:P type layer
102b:N type layer
102c:P type electrode layer
102d:N type electrode layer
102e: neutral line
401: substrate
402: photodetector
402a:P type layer
402b:N type layer
402c:P type electrode layer
402d:N type electrode layer
Embodiment
Below will cooperate appended icon to be described in further detail at preferred embodiment of the present invention.Some size is understood the present invention so that clearer description to be provided to help the stakeholder who is familiar with this skill with the expression that other partly relevant dimension scale is exaggerated.
Fig. 1 shows the generalized section of a kind of preferred embodiment of light detecter for semiconductor of the present invention.
With reference to shown in Figure 1, it mainly is by a substrate 101 being connected on the structure of a photodetector 102 bottoms, and this photodetector 102 forms flip-chip (flip chip) structures dress forms, receives incident light source and see through the top.
In each above-mentioned element, this substrate 101 is one to have the structure of circuit, and form a first metal layer 101a and one second metal level 101b at least in the surface, and the first metal layer 101a and the second metal level 101b are the corresponding signal of telecommunication output/ingress that is electrically connected to these substrate 101 circuit, export/go in order to the signal of telecommunication between this substrate 101 and the photodetector 102 to be provided.
Above-mentioned substrate 101 can form a lead frame (lead frame), in order to being electrically connected to photodetector 102, and provide the signal of telecommunication of this photodetector 102 to export/go into.
Moreover this photodetector 102 is semiconductor photodetectors, and for instance, it is a kind of gallium nitride (GaN) based semiconductor photodetector.This photodetector 102 is that the stacked on top one N type layer 102b of a P type layer 102a forms, wherein, this P type layer 102a is as the formed P type semiconductor of P type gallium nitride (p-type semiconductor) material, and its exposed section, bottom forms the P type electrode layer 102c of an ohmic contact; And this N type layer 102b is as the formed N type semiconductor of n type gallium nitride (n-typesemiconductor) material, and its exposed section, bottom forms the N type electrode layer 102d of an ohmic contact.
Wherein, the N type layer 102b of this photodetector 102 is the tops that directly are exposed at photodetector 102, thereby can increase the efficient of its light source incident.
The first metal layer 101a of aforesaid substrate 101 and the second metal level 101b, cooperatively interact with the P type electrode layer 102c and the N type electrode layer 102d of photodetector 102, make this first metal layer 101a and the second metal level 101b respectively to should P type electrode layer 102c and N type electrode layer 102d and mutually then, thereby this photodetector 102 is connected on this substrate 101, and forms electrical connection.Wherein, the area of this first metal layer 101a and the second metal level 101b, or even respectively to should P type electrode layer 102c and N type electrode layer 102d, and form the close contact area of size.
Light detecter for semiconductor based on the invention described above, in its photodetector 102, light source is directly into being incident upon top N type layer 102b, again after the contact-making surface structure that forms via the P type layer 102a of N type layer 102b and bottom, suitable incident light will be absorbed by material, make the transmission charge carrier (electron-hole pair) that produces conduction in the material, thereby after outside incident light is incident to, being added with the contact-making surface structure of bias voltage, photo-signal can be produced, thereby light signal can be detected.
Figure 2 shows that the generalized section of the another kind of preferred embodiment of light detecter for semiconductor of the present invention.
With reference to shown in Figure 2, in the light detecter for semiconductor structure of the invention described above, between its P type layer 102a and the N type layer 102b, can increase and form a neutral line 102e, this neutral line 102e is as the formed intrinsic semiconductor of the gallium nitride of neutrality (Intrinsic Semiconductor) material, thereby forms a PIN light detecter for semiconductor structure.
The above is only in order to explain preferred embodiment of the present invention; be not the present invention to be done any pro forma restriction with it; so, all have in that identical invention spirit is following do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protect.
Claims (8)
1. light detecter for semiconductor, it comprises:
One substrate, it is one to have the structure of circuit, and forms a first metal layer and one second metal level at least in the surface, and the first metal layer and second metal level are the corresponding signal of telecommunication output/ingress that is electrically connected to this substrate circuit;
And
One photodetector, it is the semiconductor photodetector, its bottom is connected on this substrate, and sees through top reception incident light source;
Wherein, the first metal layer of this substrate and second metal level cooperate with the P type electrode layer and the N type electrode layer of photodetector respectively, form local contact area, adopt whole metal level to engage and the formation electrical connection.
2. light detecter for semiconductor as claimed in claim 1, wherein, the first metal layer of this substrate and second metal level cooperate with the P type electrode layer and the N type electrode layer of photodetector respectively, thereby and then fix this photodetector mutually on this substrate, and form electrical connection.
3. light detecter for semiconductor as claimed in claim 1, wherein, this photodetector is the semiconductor photodetector, it comprises a P type layer and a N type layer, and this N type layer is positioned at the top of P type layer, this P type layer is that the P type semiconductor material forms, and forms the P type electrode layer of an ohmic contact in the exposed section, bottom; And this N type layer is that the N type semiconductor material forms, and forms the N type electrode layer of an ohmic contact in the exposed section, bottom.
4. light detecter for semiconductor as claimed in claim 3, wherein, the N type layer of this photodetector directly is exposed to the top.
5. light detecter for semiconductor as claimed in claim 3, wherein, this photodetector is a gallium nitride based semiconductor light detecting element, this P type layer is that P type gallium nitride material forms, and this N type layer is that the n type gallium nitride material forms.
6. light detecter for semiconductor as claimed in claim 1, wherein, this substrate can form a lead frame, in order to being electrically connected to photodetector, thereby provide the signal of telecommunication of this photodetector to export/go into.
7. light detecter for semiconductor as claimed in claim 1 wherein, between this P type layer and the N type layer, can increase and form a neutral line, and this neutral line is that intrinsic material forms.
8. light detecter for semiconductor as claimed in claim 7, wherein, this neutral line is that neutral gallium nitride material forms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100985175A CN100442527C (en) | 2004-12-09 | 2004-12-09 | Light detecter for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100985175A CN100442527C (en) | 2004-12-09 | 2004-12-09 | Light detecter for semiconductor |
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| CN1787219A CN1787219A (en) | 2006-06-14 |
| CN100442527C true CN100442527C (en) | 2008-12-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2004100985175A Active CN100442527C (en) | 2004-12-09 | 2004-12-09 | Light detecter for semiconductor |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6048751A (en) * | 1993-06-25 | 2000-04-11 | Lucent Technologies Inc. | Process for manufacture of composite semiconductor devices |
| US20040159775A1 (en) * | 1999-12-24 | 2004-08-19 | Bae Systems Information And Electronic Systems Integration Inc | QWIP with enhanced optical coupling |
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2004
- 2004-12-09 CN CNB2004100985175A patent/CN100442527C/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6048751A (en) * | 1993-06-25 | 2000-04-11 | Lucent Technologies Inc. | Process for manufacture of composite semiconductor devices |
| US20040159775A1 (en) * | 1999-12-24 | 2004-08-19 | Bae Systems Information And Electronic Systems Integration Inc | QWIP with enhanced optical coupling |
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| CN1787219A (en) | 2006-06-14 |
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Effective date of registration: 20161026 Address after: Taiwan, China Hsinchu Science Park Road No. five, No. 5 Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: China Taiwan Taoyuan County Patentee before: Formosa Epitaxy Incorporation |