JP2006135010A

JP2006135010A - Semiconductor photodetector

Info

Publication number: JP2006135010A
Application number: JP2004320633A
Authority: JP
Inventors: Shakumei Han; 錫明潘; Honin Kan; 奉任簡
Original assignee: Formosa Epitaxy Inc
Current assignee: Formosa Epitaxy Inc
Priority date: 2004-11-04
Filing date: 2004-11-04
Publication date: 2006-05-25

Abstract

<P>PROBLEM TO BE SOLVED: To prevent deterioration of photocurrent and optical response from occurring. <P>SOLUTION: A semiconductor photodetector is provided with a substrate and a photodetecting element. The substrate is provided with an electric circuit. At least a first metal layer and a second metal layer are formed on the surface. The first metal layer and the second metal layer are electrically connected to a corresponding electrical signal input/output node of the electric circuit of the substrate. The photodetection element is a semiconductor photodetecting element, and the bottom end is connected to the substrate. The photodetecting element receives an incident light by transmitting an upper end. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は一種の半導体光検出器に係り、特に光検出素子が基板に接続されて、フリップチップパッケージの構造を形成するものに関する。 The present invention relates to a type of semiconductor photodetector, and more particularly to a photodetector having a photodetector connected to a substrate to form a flip chip package structure.

伝統的な半導体光検出器は、基板の上にエピタキシャル構造が設けられて構成されている。図３は周知の技術の半導体光検出器の構造を示し、それは基板４０１の上に、光検出器４０２が形成された構造である。そのうち、光検出器４０２は基板４０１において上向きにＰ型層４０２ａ及びＮ型層４０２ｂが形成され、該Ｐ型層４０２ａはＰ型半導体材料、例えばＰ型窒化ガリウム材料で形成され、その露出側にオームコンタクトのＰ電極層４０２ｃが形成され、Ｎ型層４０２ｂはＮ型半導体材料、例えばＮ型窒化ガリウム材料で形成され、その露出側にオームコンカウトのＮ電極層４０２ｄが形成されている。前述のＰ電極層４０２ｃ及びＮ電極層４０２ｄは光検出器４０２の電気入出力を行なう電気接点とされ、且つ光線は光検出器４０２の上端より入射し、並びにＰ型層４０２ａとＮ型層４０２ｂの光電効果により光電流を発生し、光の検出を達成する。しかし、このような光検出器中、入射光線は上端より光検出器４０２のＰ型層４０２ａとＮ型層４０２ｂを通過し、入射光線がこのため各電極層に接触して電極材料に吸収されるため、光電流及び光応答の低下が形成された。 Traditional semiconductor photodetectors are constructed with an epitaxial structure on a substrate. FIG. 3 shows the structure of a well-known semiconductor photodetector, which is a structure in which a photodetector 402 is formed on a substrate 401. Among them, the photodetector 402 has a P-type layer 402a and an N-type layer 402b formed upward on the substrate 401. The P-type layer 402a is made of a P-type semiconductor material, for example, a P-type gallium nitride material, and on the exposed side thereof. An ohmic contact P-electrode layer 402c is formed, an N-type layer 402b is formed of an N-type semiconductor material, for example, an N-type gallium nitride material, and an ohmic contact N-electrode layer 402d is formed on the exposed side. The P electrode layer 402c and the N electrode layer 402d described above serve as electrical contacts for performing electrical input / output of the photodetector 402, and light rays enter from the upper end of the photodetector 402, and the P type layer 402a and the N type layer 402b. The photoelectric effect generates photocurrent and achieves light detection. However, in such a photodetector, incident light passes from the upper end through the P-type layer 402a and the N-type layer 402b of the photodetector 402, so that the incident light contacts each electrode layer and is absorbed by the electrode material. Therefore, a decrease in photocurrent and photoresponse was formed.

上述の欠点を克服するため、本発明は周知の半導体光検出器構造の欠点に基づき発明された。 In order to overcome the above-mentioned drawbacks, the present invention was invented based on the disadvantages of known semiconductor photodetector structures.

本発明は前述の関係技術中の少なくとも一つの制限及び欠点を解決できる一種の半導体光検出器を提供することを目的としている。 It is an object of the present invention to provide a kind of semiconductor photodetector that can solve at least one of the limitations and disadvantages of the related art.

本発明はまた、光検出素子が形成形成するフリップチップパッケージ形式により、光線が電極の阻止を受けないようにして、大幅に受光面積を増し、光電流の生成確率を増した一種の半導体光検出器を提供することを目的としている。 The present invention is also a kind of semiconductor photodetection in which the flip chip package form formed by the photodetection element prevents the light from being blocked by the electrode, greatly increases the light receiving area, and increases the generation probability of the photocurrent. The purpose is to provide a vessel.

本発明はさらに、光検出素子の基板との接合部分に全面の金属層による接合を採用して局部接合でなくし、フリップチップボンダーを組み合わせるだけで、並びに金材質のバンプ（Ａｕｂｕｍｐ）を製造する必要なくして、その接合強度を向上し、並びに製造コストを減らし生産能力を高めることができる半導体光検出器を提供することを目的としている。 Further, the present invention adopts bonding by a metal layer on the entire surface at the bonding portion with the substrate of the light detection element to eliminate local bonding, and only to combine a flip chip bonder, and to produce a gold bump (Au bump). An object of the present invention is to provide a semiconductor photodetector that can improve the bonding strength without being necessary, and can reduce the manufacturing cost and increase the production capacity.

請求項１の発明は、半導体光検出器において、
電気回路を具え、表面部分に少なくとも第１金属層と第２金属層が形成され、且つ第１金属層及び第２金属層が該電気回路の対応する電気信号入出力ノードに電気的に接続された基板と、
半導体光検出素子であり、その底端が基板の上に接続され、且つ上端より入射光線を受け取る光検出素子と、
を具え、該基板の第１金属層と第２金属層が光検出素子のＰ電極層とＮ電極層に組み合わされ、並びに相互に接続されて電気的接続を形成することを特徴とする、半導体光検出器としている。
請求項２の発明は、請求項１記載の半導体光検出器において、第１金属層及び第２金属層の面積が、それぞれＰ電極層とＮ電極層に対応し、局部の接触面積を形成することを特徴とする、半導体光検出器としている。
請求項３の発明は、請求項１記載の半導体光検出器において、第１金属層及び第２金属層の面積が、それぞれＰ電極層とＮ電極層に対応し、相互に接近する大きさの接触面積を形成することを特徴とする、半導体光検出器としている。
請求項４の発明は、請求項１記載の半導体光検出器において、基板の第１金属層と第２金属層が光検出素子のＰ電極層とＮ電極層に組み合わされ、相互に接続されて該光検出素子が該基板に固定され並びに電気的接続を形成することを特徴とする、半導体光検出器としている。
請求項５の発明は、請求項１記載の半導体光検出器において、光検出素子が半導体光検出素子であり、それはＰ型層とＮ型層を具え、該Ｎ型層がＰ型層の上方に位置し、該Ｐ型層はＰ型半導体材料で形成され、並びに底部の露出部分にオームコンタクトのＰ電極層が形成され、該Ｎ型層がＮ型半導体材料で形成され、底部の露出部分にオームコンタクトのＮ電極層が形成されたことを特徴とする、半導体光検出器としている。
請求項６の発明は、請求項５記載の半導体光検出器において、光検出素子のＮ型層が上端に露出したことを特徴とする、半導体光検出器としている。
請求項７の発明は、請求項５記載の半導体光検出器において、光検出素子が窒化ガリウム系半導体光検出素子であり、Ｐ型層がＰ型窒化ガリウム材料で形成され、Ｎ型層がＮ型窒化ガリウム材料で形成されたことを特徴とする、半導体光検出器としている。
請求項８の発明は、請求項１記載の半導体光検出器において、基板がリードフレームを形成して電気を光検出素子に接続し、光検出素子の電気信号入出力を提供することを特徴とする、半導体光検出器としている。
請求項９の発明は、請求項１記載の半導体光検出器において、Ｐ型層とＮ型層の間に中性層が設けられ、該中性層が真性半導体材料で形成されたことを特徴とする、半導体光検出器としている。
請求項１０の発明は、請求項９記載の半導体光検出器において、中性層が中性の窒化ガリウム材料で形成されたことを特徴とする、半導体光検出器としている。 The invention of claim 1 is a semiconductor photodetector,
An electric circuit is provided, at least a first metal layer and a second metal layer are formed on the surface portion, and the first metal layer and the second metal layer are electrically connected to corresponding electric signal input / output nodes of the electric circuit. A substrate,
A light-detecting element that is a semiconductor light-detecting element, the bottom end of which is connected to the substrate and receives incident light from the top end;
And a first metal layer and a second metal layer of the substrate are combined with the P electrode layer and the N electrode layer of the photodetecting element and connected to each other to form an electrical connection. It is a photodetector.
According to a second aspect of the present invention, in the semiconductor photodetector according to the first aspect, the areas of the first metal layer and the second metal layer correspond to the P electrode layer and the N electrode layer, respectively, and form a local contact area. This is a semiconductor photodetector.
According to a third aspect of the present invention, in the semiconductor photodetector according to the first aspect, the areas of the first metal layer and the second metal layer correspond to the P electrode layer and the N electrode layer, respectively, and are close to each other. The semiconductor photodetector is characterized by forming a contact area.
According to a fourth aspect of the present invention, in the semiconductor photodetector according to the first aspect, the first metal layer and the second metal layer of the substrate are combined with the P electrode layer and the N electrode layer of the light detecting element and connected to each other. A semiconductor photodetector is characterized in that the photodetector element is fixed to the substrate and forms an electrical connection.
According to a fifth aspect of the present invention, in the semiconductor photodetector according to the first aspect, the light detection element is a semiconductor light detection element, which comprises a P-type layer and an N-type layer, and the N-type layer is located above the P-type layer. The P-type layer is formed of a P-type semiconductor material, and a P-electrode layer having an ohmic contact is formed on an exposed portion of the bottom, and the N-type layer is formed of an N-type semiconductor material, and an exposed portion of the bottom The semiconductor photodetector is characterized in that an N-electrode layer of ohmic contact is formed on the semiconductor photodetector.
According to a sixth aspect of the present invention, there is provided the semiconductor photodetector according to the fifth aspect, wherein the N-type layer of the photodetector is exposed at the upper end.
According to a seventh aspect of the present invention, in the semiconductor photodetector according to the fifth aspect, the photodetector is a gallium nitride based semiconductor photodetector, the P-type layer is formed of a P-type gallium nitride material, and the N-type layer is N The semiconductor photodetector is formed of a type gallium nitride material.
According to an eighth aspect of the present invention, in the semiconductor photodetector according to the first aspect, the substrate forms a lead frame to connect electricity to the light detection element, and provides an electrical signal input / output of the light detection element. It is a semiconductor photodetector.
The invention according to claim 9 is the semiconductor photodetector according to claim 1, wherein a neutral layer is provided between the P-type layer and the N-type layer, and the neutral layer is formed of an intrinsic semiconductor material. And a semiconductor photodetector.
The invention of claim 10 is the semiconductor photodetector according to claim 9, wherein the neutral layer is formed of a neutral gallium nitride material.

本発明は前述の関係技術中の少なくとも一つの制限及び欠点を解決できる一種の半導体光検出器を提供している。 The present invention provides a type of semiconductor photodetector that can overcome at least one of the limitations and disadvantages of the related art described above.

本発明はまた、光検出素子が形成形成するフリップチップパッケージ形式により、光線が電極の阻止を受けないようにして、大幅に受光面積を増し、光電流の生成確率を増した一種の半導体光検出器を提供している。 The present invention is also a kind of semiconductor photodetection in which the flip chip package form formed by the photodetection element prevents the light from being blocked by the electrode, greatly increases the light receiving area, and increases the generation probability of the photocurrent. Serving a vessel.

本発明はさらに、光検出素子の基板との接合部分に全面の金属層による接合を採用して局部接合でなくし、フリップチップボンダーを組み合わせるだけで、並びに金材質のバンプ（Ａｕｂｕｍｐ）を製造する必要なくして、その接合強度を向上し、並びに製造コストを減らし生産能力を高めることができる半導体光検出器を提供している。 Further, the present invention adopts bonding by a metal layer on the entire surface at the bonding portion with the substrate of the light detection element to eliminate local bonding, and only to combine a flip chip bonder, and to produce a gold bump (Au bump). There is provided a semiconductor photodetector that can improve the bonding strength without increasing the necessity, and reduce the manufacturing cost and increase the production capacity.

本発明はフリップチップパッケージ構造を有する半導体光検出器を提供し、それは、基板と光検出素子を具え、該基板は電気回路を具えた構造であり、並びに表面に少なくとも第１金属層及び第２金属層が形成され、且つ第１金属層及び第２金属層は該基板の電気回路の対応する電気信号入出力ノードに電気的に接続され、該光検出素子は、半導体光検出素子であり、底端が該基板に接続され、且つ光検出素子は上端を透過して入射光線を受け取るものとされる。 The present invention provides a semiconductor photodetector having a flip chip package structure, which comprises a substrate and a photodetector element, the substrate comprising an electric circuit, and at least a first metal layer and a second layer on the surface. A metal layer is formed, and the first metal layer and the second metal layer are electrically connected to a corresponding electric signal input / output node of the electric circuit of the substrate, and the photodetecting element is a semiconductor photodetecting element; The bottom end is connected to the substrate, and the light detection element transmits the top end and receives incident light.

図１は本発明の半導体光検出器の好ましい実施例の断面図である。図１に示されるように、それは、基板１０１が光検出素子１０２底端に接続された構造とされ、且つ該光検出素子１０２はフリップチップパッケージ形式を形成し、上端より入射光線を受け取る。 FIG. 1 is a cross-sectional view of a preferred embodiment of the semiconductor photodetector of the present invention. As shown in FIG. 1, it has a structure in which a substrate 101 is connected to the bottom end of a photodetecting element 102, and the photodetecting element 102 forms a flip chip package type and receives incident light from the top end.

前述の各部品中、基板１０１は電気回路を具えた構造であり、並びに表面に少なくとも第１金属層１０１ａ及び第２金属層１０１ｂが形成され、且つ第１金属層１０１ａ及び第２金属層１０２ｂは該基板１０１の電気回路の対応する電気信号入出力ノードに電気的に接続され、該基板１０１と光検出素子１０２の間の電気信号の入出力に供される。 Among the components described above, the substrate 101 has a structure including an electric circuit, and at least a first metal layer 101a and a second metal layer 101b are formed on the surface, and the first metal layer 101a and the second metal layer 102b are The signal is electrically connected to a corresponding electric signal input / output node of the electric circuit of the substrate 101 and used for input / output of an electric signal between the substrate 101 and the light detection element 102.

前述の基板１０１はリードフレームに形成可能で、電気を光検出素子１０２に接続し、光検出素子１０２に電気信号入出力を提供する。 The aforementioned substrate 101 can be formed on a lead frame, connects electricity to the light detection element 102, and provides an electric signal input / output to the light detection element 102.

更に、該光検出素子１０２は半導体光検出素子とされ、例えば、窒化ガリウム（ＧａＮ）系半導体光検出素子とされる。該光検出素子１０２はＰ型層１０２ａの上部にＮ型層１０２ｂが堆積されて形成される。そのうち、該Ｐ型層１０２ａはＰ型半導体材料、例えばＰ型の窒化ガリウム材料で形成され、その底部の露出部分にオームコンタクトのＰ電極層１０２ｃが形成されている。且つ該Ｎ型層１０２ｂは、Ｎ型半導体材料とされ、例えばＮ型の窒化ガリウム材料で形成され、その底部の露出部分にオームコンタクトのＮ電極層１０２ｄが形成されている。 Further, the light detection element 102 is a semiconductor light detection element, for example, a gallium nitride (GaN) based semiconductor light detection element. The light detection element 102 is formed by depositing an N-type layer 102b on top of a P-type layer 102a. Among them, the P-type layer 102a is made of a P-type semiconductor material, for example, a P-type gallium nitride material, and an ohmic contact P-electrode layer 102c is formed on the exposed portion at the bottom. The N-type layer 102b is made of an N-type semiconductor material, for example, an N-type gallium nitride material, and an ohmic contact N-electrode layer 102d is formed on the exposed portion of the bottom.

そのうち、該光検出素子１０２のＮ型層１０２ｂは直接光検出素子１０２の上端に露出し、これによりその光線入射の効率を増すことができる。 Among them, the N-type layer 102b of the photodetecting element 102 is directly exposed at the upper end of the photodetecting element 102, whereby the efficiency of light incidence can be increased.

前述の基板１０１の第１金属層１０１ａと第２金属層１０２ｂ、及び光検出素子１０２のＰ電極層１０２ｃとＮ電極層１０２ｄは、相互に組み合わされ、これにより第１金属層１０１ａと第２金属層１０２ｂがそれぞれＰ電極層１０２ｃとＮ電極層１０２ｄに接続され、光検出素子１０２を基板１０１上に接続すると共に電気的に接続する。そのうち、該第１金属層１０１ａ及び第２金属層１０２ｂの面積は、Ｐ電極層１０２ｃとＮ電極層１０２ｄに対応してほぼ同じ接触面積を形成する。 The first metal layer 101a and the second metal layer 102b of the substrate 101 and the P electrode layer 102c and the N electrode layer 102d of the light detection element 102 are combined with each other, whereby the first metal layer 101a and the second metal layer are combined. The layer 102b is connected to the P electrode layer 102c and the N electrode layer 102d, respectively, and the photodetector 102 is connected to the substrate 101 and electrically connected thereto. Among them, the areas of the first metal layer 101a and the second metal layer 102b form substantially the same contact area corresponding to the P electrode layer 102c and the N electrode layer 102d.

前述の本発明の半導体光検出器は、その光検出素子１０２中、光線が上部のＮ型層１０２ｂを通して入射し、更にＮ型層１０２ｂと底部のＰ型層１０２ａが形成する界面構造を通過した後、入射光線が材料に吸収されて材料内で導電の伝送キャリア（電子−正孔対）を発生し、これにより入射光がバイアス電圧を印加された界面構造に到ると、光電流信号を発生し、これにより光信号を検出できる。 In the above-described semiconductor photodetector of the present invention, in the photodetector 102, a light beam enters through the upper N-type layer 102b and further passes through an interface structure formed by the N-type layer 102b and the bottom P-type layer 102a. Later, the incident light is absorbed by the material to generate a conductive transmission carrier (electron-hole pair) in the material, and when the incident light reaches the interface structure to which a bias voltage is applied, the photocurrent signal is generated. And thus an optical signal can be detected.

図２は本発明の半導体光検出器のもう一つの実施例の断面図である。図２に示されるように、前述の本発明の半導体光検出器の構造中、Ｐ型層１０２ａとＮ型層１０２ｂの間に、中性層１０２ｅが増設され、この中性層１０２ｅは真性半導体（ｉｎｔｒｉｎｓｉｃ
ｓｅｍｉｃｏｎｄｕｃｔｏｒ）材料とされ、例えば中性の窒化ガリウム材料で形成され、これによりＰＩＮ半導体光検出器の構造が形成される。 FIG. 2 is a cross-sectional view of another embodiment of the semiconductor photodetector of the present invention. As shown in FIG. 2, a neutral layer 102e is added between the P-type layer 102a and the N-type layer 102b in the structure of the semiconductor photodetector of the present invention described above, and this neutral layer 102e is an intrinsic semiconductor. (Intrinsic
for example, a neutral gallium nitride material, thereby forming the structure of a PIN semiconductor photodetector.

以上は本発明の説明のために提示された実施例であり、本発明の範囲を限定するものではなく、以上の実施例の説明及び図面の記載に基づきなしうる細部の修飾或いは改変は、いずれも本発明の請求範囲に属するものとする。 The above is an embodiment presented for explaining the present invention, and does not limit the scope of the present invention, and any modification or alteration of details that can be made based on the explanation of the above embodiment and the description of the drawings. Are also within the scope of the claims of the present invention.

本発明の半導体光検出器の第１実施例の断面図である。It is sectional drawing of 1st Example of the semiconductor photodetector of this invention. 本発明の半導体光検出器の第２実施例の断面図である。It is sectional drawing of 2nd Example of the semiconductor photodetector of this invention. 周知の半導体光検出器の第２実施例の断面図である。It is sectional drawing of 2nd Example of a known semiconductor photodetector.

Explanation of symbols

１０１基板
１０１ａ第１金属層
１０１ｂ第２金属層
１０２光検出素子
１０２ａＰ型層
１０２ｂＮ型層
１０２ｃＰ電極層
１０２ｄＮ電極層
１０２ｅ中性層
４０１基板
４０２光検出素子
４０２ａＰ型層
４０２ｂＮ型層
４０２ｃＰ電極層
４０２ｄＮ電極層
101 Substrate 101a First metal layer 101b Second metal layer 102 Photodetector 102a P-type layer 102b N-type layer 102c P-electrode layer 102d N-electrode layer 102e Neutral layer 401 Substrate 402 Photodetector 402a P-type layer 402b N-type layer 402c P electrode layer 402d N electrode layer

Claims

In the semiconductor photodetector,
An electric circuit is provided, at least a first metal layer and a second metal layer are formed on the surface portion, and the first metal layer and the second metal layer are electrically connected to corresponding electric signal input / output nodes of the electric circuit. A substrate,
A light-detecting element that is a semiconductor light-detecting element, the bottom end of which is connected to the substrate and receives incident light from the top end;
And a first metal layer and a second metal layer of the substrate are combined with the P electrode layer and the N electrode layer of the photodetecting element and connected to each other to form an electrical connection. Photo detector.

2. The semiconductor photodetector according to claim 1, wherein the areas of the first metal layer and the second metal layer correspond to the P electrode layer and the N electrode layer, respectively, and form a local contact area. Photo detector.

2. The semiconductor photodetector according to claim 1, wherein the areas of the first metal layer and the second metal layer correspond to the P electrode layer and the N electrode layer, respectively, and form a contact area having a size close to each other. A semiconductor photodetector.

2. The semiconductor photodetector according to claim 1, wherein the first metal layer and the second metal layer of the substrate are combined with the P electrode layer and the N electrode layer of the photodetecting element, and are connected to each other to connect the photodetecting element to the substrate. A semiconductor photodetector, characterized in that it is fixed to and forms an electrical connection.

2. The semiconductor photodetector according to claim 1, wherein the photodetector is a semiconductor photodetector, and comprises a P-type layer and an N-type layer, the N-type layer being located above the P-type layer, and the P-type layer. The layer is formed of a P-type semiconductor material, and an ohmic contact P-electrode layer is formed on the bottom exposed portion, the N-type layer is formed of an N-type semiconductor material, and an ohmic contact N-electrode layer is formed on the bottom exposed portion. A semiconductor photodetector, characterized in that is formed.

6. The semiconductor photodetector according to claim 5, wherein an N-type layer of the photodetector is exposed at an upper end.

6. The semiconductor photodetector according to claim 5, wherein the photodetector is a gallium nitride based semiconductor photodetector, the P-type layer is formed of a P-type gallium nitride material, and the N-type layer is formed of an N-type gallium nitride material. A semiconductor photodetector.

2. The semiconductor photodetector according to claim 1, wherein the substrate forms a lead frame to connect electricity to the light detection element, and provides an electric signal input / output of the light detection element.

2. The semiconductor photodetector according to claim 1, wherein a neutral layer is provided between the P-type layer and the N-type layer, and the neutral layer is formed of an intrinsic semiconductor material. .

10. The semiconductor photodetector according to claim 9, wherein the neutral layer is made of a neutral gallium nitride material.