CN2468158Y - Light-emitting diode (LED) - Google Patents
Light-emitting diode (LED) Download PDFInfo
- Publication number
- CN2468158Y CN2468158Y CN01200780U CN01200780U CN2468158Y CN 2468158 Y CN2468158 Y CN 2468158Y CN 01200780 U CN01200780 U CN 01200780U CN 01200780 U CN01200780 U CN 01200780U CN 2468158 Y CN2468158 Y CN 2468158Y
- Authority
- CN
- China
- Prior art keywords
- support
- bracket
- emitting diode
- led
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses a novel light-emitting diode (LED) structure. The thickness of a bracket C2 for putting a wafer is thickened; the bowl depth is made to reach more than 0.6MM; the luminous efficiency can be enhanced. A bracket heat radiation block C5 is arranged on the bracket C2; heat radiation glue C6 is arranged at bottom; a leading wire extends downwards from both sides of the bracket C2. The bracket C2 and the bottom of the bracket heat radiation block C5 are engaged on a PCB board; consequently, the heat radiation efficiency can be enhanced.
Description
The utility model relates to a kind of improvement of light-emitting diode, belongs to electric elements.
Existing vertically standing LED is gone up formation bowl portion in a support A2, and place wafer A1 in bowl portion, and extend two lead-in wires from support A2, and be welded on the solder joint A3 that is positioned at pcb board A4 with the lead-in wire end as shown in Figure 1.This kind vertically standing LED, because of luminous efficiency can improve more deeply in its bowl portion, but utilize a lead-in wire heat radiation so radiating efficiency is relatively poor, according to theory because of it, the good and bad degree and the luminous efficiency of radiating effect are proportional, and then luminous efficiency is poor more when radiating effect is poor more.This kind vertically standing LED can't further improve its radiating effect, therefore haves much room for improvement.
Other has a kind of light-emitting diode of modified form, and it is constructed as shown in Figure 2, holds wafer B1 on support B2, and strengthens the width of support B2 and the diameter of lead-in wire, and with wire bonds on the welding point B 3 of pcb board B4.Though the light-emitting diode of this kind structure can lower the height of contour of light-emitting diode because of support B2 broad, and because of utilizing two lead-in wire heat radiations so can increase heat-sinking capability, but because of support B2 approaches so bowl is dark more shallow, only be about 0.4mm, form dark as the aforementioned as the vertically standing LED above the bowl more than the 0.4mm, and with luminous efficiency connection is arranged because of bowl is dark, so its luminous efficiency has its restriction, and wait to improve.
The purpose of this utility model is to overcome the shortcoming that above-mentioned technology exists, and a kind of novel led configurations is provided.
The technical solution of the utility model:
For achieving the above object, this novel light-emitting diode structure, be the support thickening that will hold wafer, make more than the dark 0.6mm of reaching of bowl, to improve luminous efficiency, and expose outside the support radiating block in the bottom or the support radiating block is set near the bottom, with the raising radiating efficiency, and lead-in wire is extended by support both sides foreign side downwards, and make support and support heat radiation bottom near to or in contact with pcb board, use the increase area of dissipation, to improve radiating efficiency.
This is novel by above-mentioned formation, because of can increasing the dark and area of dissipation of bowl, the thickening backing thickness improves luminous efficiency, and be provided with radiating block in the bottom and make frame bottom contact pcb board with the radiating block bottom, it is all to make area of dissipation extend to pcb board by support, the radiating efficiency of the hanging type Framework construction that it is more existing is high, therefore radiating efficiency can be significantly improved, thereby its luminous efficiency can be significantly improved.
Now in conjunction with the accompanying drawings the utility model is specified.
Fig. 1 is existing vertically standing LED side perspective.
Fig. 2 is a modified form light-emitting diode side perspective.
Fig. 3 is the three-dimensional LED perspective view of the utility model.
Fig. 4 is the light-emitting diode side perspective of the utility model.
Fig. 5 is the perspective elevation of another preferred embodiment of the utility model.
Fig. 6 is the stereogram of another embodiment of the utility model.
Symbol description:
A1, B1, C1 are wafer, and A2, B2, C2 are support, and C21 is a screw hole, and A3, B3, C3 are solder joint, and A4, B4, C4 are pcb board, and C5 is the support radiating block, and C6 is a thermal paste.
As shown in Figure 3, the present embodiment light-emitting diode is to go up formation bowl portion and hold wafer C1 in support C2, because of support thickening more shown in Figure 2, so can be formed up to more than the 0.6mm bowl is dark, can significantly improve luminous efficiency, again, because of the thickness of support C2 is thicker and wide, lead-in wire is extended by foreign side both sides and descend, volume is bigger so it dispels the heat, can increase radiating effect, be provided with support radiating block C5 in support C2 bottom simultaneously, and be provided with thermal paste C6, and be welded on the pcb board C4 with solder joint C3, with large tracts of land contact pcb board C4, this support C2 can also the screw snap close mode replace solder joint C3, as shown in Figure 6, on support C2, be provided with screw C21, can increase radiating efficiency, improve luminous efficiency.Perhaps also can directly support radiating block C5 be welded on the pcb board C4 with solder joint C3.
Fig. 5 is the perspective elevation of this novel another preferred embodiment, and this figure is depicted as the dichromatism light-emitting diode that twin lamella is set, and is as shown in the drawing, can dig out two bowl portions and respectively puts a wafer, can form dichromatic LED.Basis is novel also to be can be used on the multi-color LED.
In sum, this novel light-emitting diode structure is deep to more than the 0.6mm because of making bowl dark adding, and can strengthen and dispel the heat volume and area even area of dissipation is extended to the full wafer pcb board, so the radiating efficiency height can improve luminous efficiency.
Claims (4)
1. a novel light-emitting diode is constructed, it includes wafer, holds the support and the lead-in wire of wafer, it is characterized in that: support radiating block C5 is set near the bottom of support C2, and the thickness thickening of its support C2 is spent to more than the 0.6mm deeply with the bowl that intensification holds wafer C1.
2. led configurations as claimed in claim 1 is characterized in that: wherein, at support C2 and support radiating block C5 bottom thermal paste C6 is set.
3. led configurations as claimed in claim 1 is characterized in that: wherein, the bottom of support C2 and support radiating block C5 is engaged on the pcb board C4.
4. led configurations as claimed in claim 2 is characterized in that: wherein, the bottom of thermal paste C6 is engaged on the pcb board C4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01200780U CN2468158Y (en) | 2001-02-01 | 2001-02-01 | Light-emitting diode (LED) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01200780U CN2468158Y (en) | 2001-02-01 | 2001-02-01 | Light-emitting diode (LED) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2468158Y true CN2468158Y (en) | 2001-12-26 |
Family
ID=33622989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN01200780U Expired - Fee Related CN2468158Y (en) | 2001-02-01 | 2001-02-01 | Light-emitting diode (LED) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2468158Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104835900A (en) * | 2015-05-22 | 2015-08-12 | 深圳莱特光电有限公司 | Novel infrared LED support |
-
2001
- 2001-02-01 CN CN01200780U patent/CN2468158Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104835900A (en) * | 2015-05-22 | 2015-08-12 | 深圳莱特光电有限公司 | Novel infrared LED support |
| CN104835900B (en) * | 2015-05-22 | 2017-08-15 | 深圳莱特光电股份有限公司 | A kind of infrared LEDs support |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |