CN2612075Y - Package structure for LED - Google Patents
Package structure for LED Download PDFInfo
- Publication number
- CN2612075Y CN2612075Y CNU032036450U CN03203645U CN2612075Y CN 2612075 Y CN2612075 Y CN 2612075Y CN U032036450 U CNU032036450 U CN U032036450U CN 03203645 U CN03203645 U CN 03203645U CN 2612075 Y CN2612075 Y CN 2612075Y
- Authority
- CN
- China
- Prior art keywords
- radiating block
- support
- colloid
- support radiating
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model relates to a LED package structure, comprising a support heat radiating block, at least two chips and a colloid, wherein the support heat radiating block has a concave portion, while two sides are respectively extended with a bend support, the support heat radiating block is thicker than the bend supports, each chip is arranged in the concave portion of the support heat radiating block to respectively connected with each power pins via wires, the colloid is packed and combine with the support heat radiating block and each chip, the bottom of the support heat radiating block is exposed outside the colloid, each bend support extended at two sides of the support heat radiating block and each power pin are extended outside the colloid. Therefore, the utility model can overcome the defects of prior art, with better heat radiating effect, simplified production, reduced production cost, adjustable color, and batch chip application, for continuously lighting the light sources in different colors for long time, to obtain a high-power LED package structure.
Description
Technical field
The utility model relates to a kind of LED encapsulating structure, especially refer to a kind of like this LED encapsulating structure, can be by forming a depressed part on this support radiating block, these support radiating block both sides respectively are extended with a bending support, the bending support that the thickness of support radiating block extends than both sides is thick, each wafer is arranged in the depressed part of this support radiating block, be coupled to each power pin with lead respectively, and establish in conjunction with this support radiating block and each wafer with colloid envelope, this support radiating block bottom surface exposes to outside this colloid, each bending support that extends of these support radiating block both sides and each power pin also extend and expose to outside this colloid, make it have excellent radiating effect, can simplify the making flow process, reduce cost of manufacture, adjustable color and a plurality of wafers are set continues to light simultaneously for the light source of shades of colour wafer for a long time, is applicable to large-scale display board, the sales field, display lighting, various advertisement plate and lighting tool etc. or similar articles.
Background technology
Known LED encapsulating structure is to form bowl portion (as Fig. 1) on a support 2, one wafer 1 is set in bowl portion, and extend two power pins from support 2, two power pins are welded on the solder joint 3 of circuit board 4, though luminous efficiency can improve more deeply in its bowl of the known vertical type light-emittingdiode of this kind portion, but because of it only utilizes a power pin heat radiation, so radiating efficiency is poor, and the good and bad degree of radiating effect is directly proportional with luminous efficiency, when so radiating effect is poor more, illumination effect is poor more, and therefore the radiating effect of above-mentioned vertical type light-emittingdiode is poor, haves much room for improvement.Also has a kind of LED encapsulating structure in addition, utilize the mixed light principle on support or circuit board, to encapsulate the light-emittingdiode of shades of colour wafer, because its integrally-built radiating effect is not good, wafer of all kinds can not be lighted simultaneously for a long time when causing using, and need to light with the flashing mode circulation, when using, reality still is difficult to satisfy user's needs.
Summary of the invention
The technical problems to be solved in the utility model provides a kind of LED encapsulating structure, the bending support that extends than both sides by this thickness that holds the support radiating block of each wafer is thick, and this support radiating block, each bending support and each power pin that extends of these support radiating block both sides are engaged on the circuit board, the contact area of this support radiating block and circuit board is significantly increased, has excellent radiating effect, make in the depressed part of this support radiating block a plurality of wafers can be set, and the light source of each wafer can continue to light simultaneously for a long time, increases its practicality.
Another technical problem to be solved in the utility model provides a kind of LED encapsulating structure, each bending support that extends of this support radiating block, these support radiating block both sides and each power pin is one-body molded makes, again through sealing, cut pin and form, can simplify the making flow process, whole cost of manufacture is declined to a great extent, increase whole practicality.
Another technical problem to be solved in the utility model provides a kind of LED encapsulating structure, and nationality adopts different brightness ratios by versicolor wafer, thereby can do the color adjustment, utilizes color mixed light principle to reach required light source colour.
Another technical problem to be solved in the utility model provides a kind of LED encapsulating structure, by the splendid radiating effect of integral body, a plurality of wafers can be set, and the light source of each wafer can continue to light simultaneously for a long time, and then makes each wafer that is arranged in this support radiating block depressed part be adapted to the multiple kenel in parallel or the kenel of connecting with each power pin.
Technical solution of the present utility model is: a kind of LED encapsulating structure, this LED encapsulating structure comprise,
One support radiating block forms a depressed part on the described support radiating block, these support radiating block both sides respectively are extended with a bending support, and the bending support that the thickness of described support radiating block extends than both sides is thick;
At least two wafers, described each wafer is arranged in the depressed part of described support radiating block, and each wafer is coupled to each power pin with lead respectively; And
Colloid, this colloid envelope is established in conjunction with described support radiating block and described each wafer, and described support radiating block bottom surface exposes to outside this colloid, and each bending support that extends of described support radiating block both sides and each power pin also extend and expose to outside the described colloid.
Aforesaid LED encapsulating structure, the outboard peripheries of described support radiating block constitute can with the firm arc-curved part that combines of above-mentioned colloid.
Aforesaid LED encapsulating structure, described each interior wafer of depressed part that is arranged at this support radiating block is the setting of connecting with each power pin.
Aforesaid LED encapsulating structure, each wafer in the described depressed part that is arranged at this support radiating block and each power pin are for being arranged in parallel.
Aforesaid LED encapsulating structure, described support radiating block bottom surface is provided with thermal paste, and this thermal paste bottom surface is engaged on the circuit board.
Aforesaid LED encapsulating structure, described support radiating block, each bending support and each power pin that extends of described support radiating block both sides are engaged on the circuit board.
Characteristics of the present utility model and advantage are: nationality is thick by the bending support that this thickness that holds the support radiating block of each wafer extends than both sides, and this support radiating block, each bending support and each power pin that extends of these support radiating block both sides are engaged on the circuit board, make the contact area of this support radiating block and circuit board significantly increase, thereby have excellent radiating effect; In the depressed part of this support radiating block a plurality of wafers can be set, and the light source of each wafer can continue simultaneously to light; Adopt different brightness ratios by versicolor wafer, can do the color adjustment, utilize color mixed light principle to reach required light source colour; Each bending support that extends of the support radiating block of this structure, these support radiating block both sides and each power pin is one-body molded makes, again through sealing, cut pin and form, so can simplify the making flow process, the cost of manufacture of integral body is significantly reduced; In addition, each the interior wafer of depressed part that is arranged at this support radiating block can be adapted to multiple kenel in parallel or be adapted to the kenel of connecting with each power pin, and is flexible in use, increases its practicality, forms a high-power LED encapsulation construction.
Description of drawings
Fig. 1 is the use schematic diagram of a known embodiment;
Fig. 2 is the stereo appearance figure of the utility model first embodiment;
Fig. 3 is the floor map of the utility model first embodiment;
Fig. 4 is the user mode generalized section of the utility model first embodiment;
Fig. 5 A, 5B are the user mode schematic diagrames of the utility model second embodiment;
Fig. 6 A, 6B are the user mode schematic diagrames of the utility model the 3rd embodiment;
Fig. 7 A, 7B are the user mode schematic diagrames of the utility model the 4th embodiment;
Fig. 8 A, 8B are the user mode schematic diagrames of the utility model the 5th embodiment;
Fig. 9 A, 9B are the user mode schematic diagrames of the utility model the 6th embodiment;
The drawing reference numeral explanation:
1, wafer 2, support 3, solder joint 4, circuit board
5, wafer 6, support radiating block 61, depressed part 62, arc-curved part
63, support 7, power pin 8, colloid 9, lead
10, thermal paste 11, circuit board
Embodiment
In order to make the technical solution of the utility model, structure and effect more cheer and bright, now the LED encapsulating structure that the utility model proposes is described in detail as follows with specific embodiment and conjunction with figs.:
To shown in Figure 4, be a kind of LED encapsulating structure that the utility model proposes as Fig. 2, this LED encapsulating structure comprises:
One support radiating block 6, form a depressed part 61 on this support radiating block 6, these support radiating block 6 both sides respectively are extended with a bending support 63, the bending support 63 that the thickness of support radiating block 6 extends than both sides is thick, in addition, these support radiating block 6 outboard peripheries form arc-curved part 62, in order to firmly combining with this colloid 8, eliminate the structural stress of 6 of colloid 8 and support radiating blocks.
Three wafers 5 (at least two wafers 5), each wafer 5 is arranged in the depressed part 61 of this support radiating block 6, is coupled to each power pin 7 with lead 9 respectively.
This support radiating block 6, each bending support 63 and each power pin 7 that extends of these support radiating block 6 both sides are engaged on the circuit board 11, in order to heat radiation, in addition, thermal paste 10 can be set in these support radiating block 6 bottom surfaces, these thermal paste 10 bottom surfaces are engaged on the circuit board 11, in order to quick heat radiating.
Constitute a kind of LED encapsulating structure by said structure, see also Fig. 2 to Fig. 4, it is thick by the bending support 63 that this thickness that holds the support radiating block 6 of each wafer 5 extends than both sides that but characteristics of the present utility model are nationality, and this support radiating block 6, each bending support 63 and each power pin 7 that extends of these support radiating block 6 both sides is engaged on the circuit board 11, make this support radiating block 6 and the contact area of circuit board 11 significantly increase, has excellent radiating effect, in the depressed part 61 of this support radiating block 6 a plurality of wafers 5 can be set, and the light source of each wafer 5 can continue to light simultaneously (when encapsulation 14mil wafer, can operate the electric current of 50mA, and can the three looks while continue for a long time to light).
Can adopt different brightness ratios by versicolor wafer 5, can do the color adjustment, utilize color mixed light principle to reach required light source colour.
Each bending support 63 and each power pin 7 one-body molded making of extending of support radiating block 6 of the present utility model, these support radiating block 6 both sides, again through sealing, cut pin and form, so can simplify the making flow process, the cost of manufacture of integral body is significantly reduced.
In addition, depressed part 61 each the interior wafer 5 that are arranged at this support radiating block 6 can be adapted to multiple kenel in parallel (as Fig. 5 A to 6B, Fig. 8 A to Fig. 9 B) with each power pin 7, or are adapted to series connection kenel (seeing also Fig. 7 A, 7B).
The LED encapsulating structure that the utility model proposes has excellent radiating effect, can simplify simultaneously and make flow process, reduction cost of manufacture, adjustment color and a plurality of wafers can be set, and effects such as the light source of each wafer can continue to light simultaneously for a long time, practicality is good, is a high-power LED encapsulation construction.
Though the utility model discloses with specific embodiment; but it is not in order to limit the utility model; on some part; or can be different in the arrangement of part; any those skilled in the art; under the prerequisite that does not break away from design of the present utility model and scope, also can make various changes and modification, therefore protection range of the present utility model should be as the criterion with the scope that claim was defined.
Claims (6)
1. LED encapsulating structure is characterized in that: this LED encapsulating structure comprises,
One support radiating block forms a depressed part on the described support radiating block, these support radiating block both sides respectively are extended with a bending support, and the bending support that the thickness of described support radiating block extends than both sides is thick;
At least two wafers, described each wafer is arranged in the depressed part of described support radiating block, and each wafer is coupled to each power pin with lead respectively; And
Colloid, this colloid envelope is established in conjunction with described support radiating block and described each wafer, and described support radiating block bottom surface exposes to outside this colloid, and each bending support that extends of described support radiating block both sides and each power pin also extend and expose to outside the described colloid.
2. LED encapsulating structure as claimed in claim 1 is characterized in that: the outboard peripheries of described support radiating block constitute can with the firm arc-curved part that combines of above-mentioned colloid.
3. LED encapsulating structure as claimed in claim 1 is characterized in that: described each interior wafer of depressed part that is arranged at this support radiating block is the setting of connecting with each power pin.
4. LED encapsulating structure as claimed in claim 1 is characterized in that: each wafer in the described depressed part that is arranged at this support radiating block and each power pin are for being arranged in parallel.
5. LED encapsulating structure as claimed in claim 1 is characterized in that: described support radiating block bottom surface is provided with thermal paste, and this thermal paste bottom surface is engaged on the circuit board.
6. LED encapsulating structure as claimed in claim 1 is characterized in that: described support radiating block, each bending support and each power pin that extends of described support radiating block both sides are engaged on the circuit board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032036450U CN2612075Y (en) | 2003-02-08 | 2003-02-08 | Package structure for LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032036450U CN2612075Y (en) | 2003-02-08 | 2003-02-08 | Package structure for LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2612075Y true CN2612075Y (en) | 2004-04-14 |
Family
ID=34158202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU032036450U Expired - Fee Related CN2612075Y (en) | 2003-02-08 | 2003-02-08 | Package structure for LED |
Country Status (1)
| Country | Link |
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| CN (1) | CN2612075Y (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006128375A1 (en) * | 2005-05-31 | 2006-12-07 | Jen-Shyan Chen | Package structure of semiconductor light-emitting device |
| CN100334722C (en) * | 2004-08-11 | 2007-08-29 | 华中科技大学 | Multiple chip integrated light-emitting diode frame |
| CN100389505C (en) * | 2005-02-17 | 2008-05-21 | 三星电机株式会社 | Led housing and fabrication method thereof |
| CN101071839B (en) * | 2006-04-21 | 2010-08-11 | 日亚化学工业株式会社 | Light emitting device |
| US7786490B2 (en) | 2005-11-28 | 2010-08-31 | Neobule Technologies, Inc. | Multi-chip module single package structure for semiconductor |
| CN103904207A (en) * | 2014-04-04 | 2014-07-02 | 利亚德光电股份有限公司 | Wafer circuit |
-
2003
- 2003-02-08 CN CNU032036450U patent/CN2612075Y/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100334722C (en) * | 2004-08-11 | 2007-08-29 | 华中科技大学 | Multiple chip integrated light-emitting diode frame |
| CN100389505C (en) * | 2005-02-17 | 2008-05-21 | 三星电机株式会社 | Led housing and fabrication method thereof |
| WO2006128375A1 (en) * | 2005-05-31 | 2006-12-07 | Jen-Shyan Chen | Package structure of semiconductor light-emitting device |
| US7777237B2 (en) | 2005-05-31 | 2010-08-17 | Neobulb Technologies, Inc. | Semiconductor light-emitting device and method of fabricating the same |
| US7985973B2 (en) | 2005-05-31 | 2011-07-26 | Neobulb Technologies, Inc. | Semiconductor light-emitting device and method of fabricating the same |
| US7786490B2 (en) | 2005-11-28 | 2010-08-31 | Neobule Technologies, Inc. | Multi-chip module single package structure for semiconductor |
| CN101071839B (en) * | 2006-04-21 | 2010-08-11 | 日亚化学工业株式会社 | Light emitting device |
| CN103904207A (en) * | 2014-04-04 | 2014-07-02 | 利亚德光电股份有限公司 | Wafer circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |