CN104835900B - A kind of infrared LEDs support - Google Patents
A kind of infrared LEDs support Download PDFInfo
- Publication number
- CN104835900B CN104835900B CN201510266357.9A CN201510266357A CN104835900B CN 104835900 B CN104835900 B CN 104835900B CN 201510266357 A CN201510266357 A CN 201510266357A CN 104835900 B CN104835900 B CN 104835900B
- Authority
- CN
- China
- Prior art keywords
- metallic support
- pcb board
- support
- infrared
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003292 glue Substances 0.000 claims description 45
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 27
- 239000011230 binding agent Substances 0.000 claims description 27
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 25
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 20
- 239000000853 adhesive Substances 0.000 claims description 18
- 230000001070 adhesive effect Effects 0.000 claims description 18
- NZZIMKJIVMHWJC-UHFFFAOYSA-N dibenzoylmethane Chemical class C=1C=CC=CC=1C(=O)CC(=O)C1=CC=CC=C1 NZZIMKJIVMHWJC-UHFFFAOYSA-N 0.000 claims description 10
- 235000011187 glycerol Nutrition 0.000 claims description 10
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims description 10
- 229960001763 zinc sulfate Drugs 0.000 claims description 10
- 229910000368 zinc sulfate Inorganic materials 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 9
- 239000000843 powder Substances 0.000 claims description 8
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 6
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 6
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 2
- 241000218202 Coptis Species 0.000 abstract description 5
- 235000002991 Coptis groenlandica Nutrition 0.000 abstract description 5
- 238000002310 reflectometry Methods 0.000 abstract description 4
- 230000008859 change Effects 0.000 abstract description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 21
- 230000032683 aging Effects 0.000 description 8
- 239000003973 paint Substances 0.000 description 8
- 150000002576 ketones Chemical class 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 239000000428 dust Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 241000894007 species Species 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 150000008062 acetophenones Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007719 peel strength test Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of novel infrared LED support, including a pcb board, two metallic supports are provided with the pcb board, back taper through hole is provided with first metallic support, form reflector, infrared LEDs chip is fixed with the pcb board of the reflector bottom, the infrared LEDs chip is connected respectively to two metallic supports by two gold threads.The pcb board two ends are fixedly installed an electrode respectively, and two electrodes each extend over and contact the bottom of two supports.Novel infrared LED support provided by the present invention, two metallic supports are set on pcb board, reflector is set on one of metallic support, infrared LEDs chip is fixed on the pcb board of reflector bottom, and infrared ray is outwards launched by reflector, is designed by the depth and size that change reflector, ultrared launch angle can be controlled, the accuracy and reflectivity of the infrared emitting angle of infrared LEDs are improved, cost of goods manufactured is reduced, yields is improved.
Description
Technical field
The present invention relates to infrared LEDs, more particularly to a kind of infrared LEDs support.
Background technology
With the development and the raising of living standard of technology, people are more and more stronger to the demand for lifting quality of the life
It is strong, the improvement particularly to domestic environment, smart home（Digital home）Industry is with big heat, particularly in recent years with household electrical appliances
And the intellectuality of house ornamentation articles for use, smart home realizes that technology is also more advanced, and Consumer's Experience is substantially improved.But, Duo Shuojia
Electricity still uses traditional IR remote controller, and IR remote controller mainly carries out infrared emitting, infrared ray using infrared LEDs
LED is that one kind can send ultrared diode, is commonly used to the occasions such as remote control.The emissive porwer of infrared LEDs is because of hair
Penetrate direction and different, when orientation angle is zero degree, its activity is defined as 100%, when orientation angle is bigger, and it radiates strong
The relative reduction of degree, when emissive porwer such as takes its orientation angle half by optical axis, its value is the half of peak value, and this angle is referred to as
Direction half-value angle, the directive property of the smaller i.e. representation element of this angle is sensitiveer.To improve the infrared emitting angle of infrared LEDs
Accuracy and reflectivity, it is necessary to design a kind of device for realizing that infrared emission angle is controllable.Current infrared LEDs are main
Using SMD infrarede emitting diode structure, it is impossible to realize the controllability of infrared emission angle.
The content of the invention
To overcome the shortcomings and deficiencies of above-mentioned prior art, the present invention provides a kind of novel infrared LED support.
The technical scheme is that：
The first metallic support and the second metal are provided with a kind of infrared LEDs support, including a pcb board, the pcb board
Back taper through hole is provided with support, first metallic support, forms solid on reflector, the pcb board of the reflector bottom
Surely there is infrared LEDs chip, the infrared LEDs chip is connected to the first metal branch by the first gold thread and the second gold thread respectively
Frame and the second metallic support.
PCB can select any PCB construction.
It is preferred that, the pcb board two ends are fixedly installed first electrode and second electrode, first electrode and the second electricity respectively
Pole extends respectively to the bottom of the first metallic support and the second metallic support, and respectively at the first metallic support and the second metal branch
The bottom connection of frame is touched.
It is preferred that, it is provided with intermediate insulating layer between first metallic support and the second metallic support.
It is preferred that, the reflector inner surface is coated with reflector layer.
It is preferred that, first metallic support and the second metallic support are aluminium support.
It is preferred that, the aluminium rack surface covers silver.
It is preferred that, first metallic support and the second metallic support are bonded on pcb board by electroconductive binder.
Electroconductive binder alleged by the present invention can select any commercially available prod.Electroconductive binder is also known as conducting resinl, is one
Various materials can be effectively glued by planting, and the adhesive of conductive energy.Conducting resinl by base composition can be divided into structural type and
The major class of filled-type two.Structural type refers to the high polymer material i.e. conductive conducting resinl in itself as conducting resinl matrix；Fill out
Fill type and refer to usual adhesive as matrix, and the conducting resinl for relying on addition electroconductive stuffing to make glue that there is electric action.
The electroconductive stuffing added in filled conductive glue, usually metal dust.Species, grain due to the metal dust of use
Degree, structure, the difference of consumption, and the adhesive matrix species used difference, the species and its performance of conducting resinl also have
Very big difference.Generally use silver powder filled conductive glue at present.And not very high field is required to electric conductivity at some
Close, also using copper powder filled conductive glue.Existing metal filled electroconductive binder generally has metal dust bad dispersibility
Easily precipitation, the problems such as electric conductivity is unstable, electroconductive binder causes its adhesive force to decline due to the influence of metal dust in addition
Easy to fall off, easy aging and electrical conductivity decline.Thus the present invention particularly preferred can select a kind of electroconductive binder, and its raw material is by weight
Acrylic acid glue, 0.02-0.07 part '-diphenylmethane diisocyanate, 5-11 part copper powder, 1-2 part acetic acid of the gauge by 50-70 parts
Butyl ester, 1-5 part dibenzoyl methane, 0.5-0.9 parts of acetophenones, 0.1-0.2 parts of potassium hydroxide, 0.05-0.1 parts of zinc sulfate, 5-7
Part glycerine.Described acrylic acid glue preferred oil acrylic acid glue, can be realized with commercially available prod, especially preferably be viscosity
：4000-12000CPS, glue paints the adhesion strength that dry glue thickness is 0.025mm：More than 2000g/25mm.Diphenyl-methane two
Isocyanates is used as catalyst, can select commercially available prod.Copper powder is prior art.Potassium hydroxide and glycerine can be carried effectively
The adhesion strength of highly adhesive, overcome because metal dust fill caused by adhesive adhesion strength decline problem, the first metallic support and
Second metallic support can be securely attached on PCB.And zinc sulfate can then significantly improve the dispersiveness of copper powder, make copper powder equably
It is dispersed in adhesive, less copper powder usage amount just can obtain higher conductive effect.Can more copper powder be prevented to be deposited at one
Or assemble agglomerating.Butyl acetate, dibenzoyl methane and acetophenone three's synergistic, then can effectively improve the ageing resistance of adhesive
Can, after xenon lamp burin-in process, electrical conductivity, the adhesion strength at adhesive position throw away the level for being maintained at higher.And lack any
A kind of composition, the effect will be impacted.In actual applications, the electroconductive binder is coated on adhesion part, thickness is
0.1-0.3mm, uses 300nm intensity for 600 μ w/cm2After ultraviolet light 3min, by first metallic support, second
Metallic support is pressed on the region for being coated with adhesive, using 350nm 500 μ w/cm2Ultraviolet light 30min.Above reagent
Commercially available prod is can select to realize.
It is preferred that, first metallic support, intermediate insulating layer and the second metallic support are contour rectangular parallelepiped structure, three
Person is completely covered on pcb board upper surface.
It is preferred that, the first electrode and second electrode are " Contraband " type structure, and pcb board two ends are embedded in the first electricity respectively
In the middle of pole and second electrode.
It is preferred that, " Contraband " the type structural base of the first electrode and second electrode is wide with pcb board, and top width is less than
Bottom width.
Beneficial effects of the present invention：
（1）Novel infrared LED support provided by the present invention, sets two metallic supports on pcb board, one of them
Reflector is set, and infrared LEDs chip is fixed on the pcb board of reflector bottom, by reflector to outgoing on metallic support
Infrared ray is penetrated, is designed by the depth and size that change reflector, ultrared launch angle can be controlled, improve infrared ray
The accuracy and reflectivity of LED infrared emitting angle, reduce cost of goods manufactured, improve yields.
（2）Novel infrared LED support provided by the present invention, two metallic supports and its middle intermediate insulating layer are
Contour rectangular parallelepiped structure, three is completely covered on pcb board upper surface, and increasing heat radiation area improves electric conductivity.
（3）Novel infrared LED support provided by the present invention, two electrodes are " Contraband " type structure, pcb board two ends
It is embedded in respectively in the middle of two electrodes, the overall steadiness of increase system.
Brief description of the drawings
Fig. 1 is the overall structure diagram of novel infrared LED support of the present invention；
Fig. 2 is the profile of novel infrared LED support of the present invention；
Fig. 3 is the left view of novel infrared LED support of the present invention；
Fig. 4 is the upward view of novel infrared LED support of the present invention.
Embodiment
Technical scheme is further described with reference to embodiment and Figure of description.
Embodiment 1
As shown in figures 1-4, the novel infrared LED support disclosed in the present embodiment, including a pcb board 1, the pcb board
The first metallic support 2 and the second metallic support 3 are provided with 1, is provided between the first metallic support 2 and the second metallic support 3
Intermediate insulating layer 10.Back taper through hole is provided with first metallic support 2, reflector 4 is formed, the reflector bottom
Infrared LEDs chip 5 is fixed with pcb board, the infrared LEDs chip is connected by the first gold thread 6 and the second gold thread 7 respectively
To the first metallic support 2 and the second metallic support 3.The two ends of pcb board 1 are fixedly installed the electricity of first electrode 8 and second respectively
Pole 9, first electrode 8 and second electrode 9 extend respectively to the bottom of the first metallic support 2 and the second metallic support 3, and respectively at
The bottom connection of first metallic support 2 and the second metallic support 3 is touched, and is infrared LEDs by first electrode 8 and second electrode 9
Chip 5 is powered.Infrared LEDs chip 5 outwards launches infrared ray by reflector, and the infra-red radiation sent to chip carries out preliminary
Convergence.Designed by the depth and size that change reflector, ultrared launch angle can be controlled, improve infrared LEDs
The accuracy of infrared emitting angle, reduces cost of goods manufactured, improves yields.
The reflector inner surface is coated with reflector layer, improves the reflectivity of the infrared emitting of infrared LEDs.
The metallic support 3 of first metallic support 2 and second is aluminium support, is conducted electricity very well, light weight, rapid heat dissipation.
The metallic support 3 of first metallic support 2 and second is bonded on pcb board by electroconductive binder, strengthens metal branch
Electric conductivity between frame and electrode, improves the steadiness of whole device.Electroconductive binder selects commercially available prod.
The aluminium rack surface covers silver, effectively meets the heat conduction requirement of high-power chip.
It is preferred that, first metallic support, intermediate insulating layer and the second metallic support are contour rectangular parallelepiped structure, three
Person is completely covered on pcb board upper surface so that the largest surface area of two metallic supports, improves radiating efficiency and electric conductivity
Energy.
The first electrode and second electrode are " Contraband " type structure, and pcb board two ends are embedded in first electrode and second respectively
In the middle of electrode, " Contraband " the type structural base and pcb board of the first electrode and second electrode are wide, and it is wide that top width is less than bottom
The bonded area of degree, two electrodes and pcb board is larger, with good stationarity.
The resin lens of epoxy resin material are additionally provided with above described two metallic supports, resin lens are to infrared ray
LED chip carries out mechanical protection stress release, and lens shape is made, and the infra-red radiation that infrared LEDs chip is sent is entered
The first optics amendment of row.
Embodiment 2
The present embodiment provides a kind of type infrared LEDs support, and such as Fig. 1 includes being provided with a pcb board 1, the pcb board 1
First metallic support 2 and the second metallic support 3, intermediate insulating layer is provided between the first metallic support 2 and the second metallic support 3
10.It is preferred that, the first metallic support and the second metallic support are copper stent.
The metallic support 3 of first metallic support 2 and second is bonded on pcb board by electroconductive binder.
It is preferred that, the present embodiment can especially select a kind of electroconductive binder, and its raw material is by weight by 65 parts of acrylic acid
Glue, 0.06 part of '-diphenylmethane diisocyanate, 8 parts of copper powders, 1 part of butyl acetate, 2 parts of dibenzoyl methanes, 0.7 part of benzene second
Ketone, 0.2 part of potassium hydroxide, 0.09 part of zinc sulfate, 6 parts of glycerine.Described acrylic acid glue preferred oil acrylic acid glue, can
Realized with commercially available prod, be especially preferably viscosity：4000-12000CPS, it is the viscous of 0.025mm that glue, which paints dry glue thickness,
Put forth effort：More than 2000g/25mm.The electroconductive binder is coated on adhesion part, thickness is 0.2mm, using 300nm's
Intensity is 600 μ w/cm2After ultraviolet light 3min, first metallic support, the second metallic support are pressed on be coated with it is viscous
The region of mixture, using 350nm 500 μ w/cm2Ultraviolet light 30min.
Embodiment 3
The present embodiment provides a kind of type infrared LEDs support, its structure such as embodiment 1.First metallic support, the second metal
Support preferably 304 stainless steels are made.
It is preferred that, the present embodiment can especially select a kind of electroconductive binder, and its raw material is by weight by 65 parts of acrylic acid
Glue, 0.06 part of '-diphenylmethane diisocyanate, 8 parts of copper powders, 1 part of butyl acetate, 2 parts of dibenzoyl methanes, 0.7 part of benzene second
Ketone, 0.2 part of potassium hydroxide, 0.09 part of zinc sulfate, 6 parts of glycerine.Described acrylic acid glue preferred oil acrylic acid glue, can
Realized with commercially available prod, be especially preferably viscosity：4000-12000CPS, it is the viscous of 0.025mm that glue, which paints dry glue thickness,
Put forth effort：More than 2000g/25mm.The electroconductive binder is coated on adhesion part, thickness is 0.2mm, using 300nm's
Intensity is 600 μ w/cm2After ultraviolet light 3min, first metallic support, the second metallic support are pressed on be coated with it is viscous
The region of mixture, using 350nm 500 μ w/cm2Ultraviolet light 30min.
Embodiment 4（Potassium hydroxide）
The present embodiment provides a kind of type infrared LEDs support, its structure such as embodiment 1.First metallic support, the second metal
The preferred copper material of support is made.
It is preferred that, the present embodiment can especially select a kind of electroconductive binder, and its raw material is by weight by 70 parts of acrylic acid
Glue, 0.02 part of '-diphenylmethane diisocyanate, 11 parts of copper powders, 1 part of butyl acetate, 5 parts of dibenzoyl methanes, 0.5 part of benzene second
Ketone, 0.1 part of zinc sulfate, 5 parts of glycerine.Described acrylic acid glue preferred oil acrylic acid glue, can be realized with commercially available prod,
Especially preferably it is viscosity：4000-12000CPS, glue paints the adhesion strength that dry glue thickness is 0.025mm：It is more than
2000g/25mm.The electroconductive binder is coated on adhesion part, thickness is -0.3mm, uses 300nm intensity for 600
μw/cm2After ultraviolet light 3min, first metallic support, the second metallic support are pressed on to the area for being coated with adhesive
Domain, using 350nm 500 μ w/cm2Ultraviolet light 30min.
Embodiment 5（Glycerine）
The present embodiment provides a kind of type infrared LEDs support, its structure such as embodiment 1.First metallic support, the second metal
The preferred copper metal of support is made.
It is preferred that, the present embodiment can especially select a kind of electroconductive binder, and its raw material is by weight by 50 parts of acrylic acid
Glue, 0.07 part of '-diphenylmethane diisocyanate, 5 parts of copper powders, 2 parts of butyl acetates, 1 part of dibenzoyl methane, 0.9 part of benzene second
Ketone, 0.1 part of potassium hydroxide, 0.1 part of zinc sulfate.Described acrylic acid glue preferred oil acrylic acid glue, can use commercially available prod
Realize, be especially preferably viscosity：4000-12000CPS, glue paints the adhesion strength that dry glue thickness is 0.025mm：It is more than
2000g/25mm.The electroconductive binder is coated on adhesion part, thickness is 0.1mm, uses 300nm intensity for 600 μ
w/cm2After ultraviolet light 3min, first metallic support, the second metallic support are pressed on to the area for being coated with adhesive
Domain, using 350nm 500 μ w/cm2Ultraviolet light 30min.
Embodiment 6 (zinc sulfate)
The present embodiment provides a kind of type infrared LEDs support, its structure such as embodiment 1.First metallic support, the second metal
The preferred copper metal of support is made.
It is preferred that, the present embodiment can especially select a kind of electroconductive binder, and its raw material is by weight by 60 parts of acrylic acid
Glue, 0.03 part of '-diphenylmethane diisocyanate, 6 parts of copper powders, 1 part of butyl acetate, 3 parts of dibenzoyl methanes, 0.8 part of benzene second
Ketone, 0.1 part of potassium hydroxide, 7 parts of glycerine.Described acrylic acid glue preferred oil acrylic acid glue, can be real with commercially available prod
It is existing, especially preferably it is viscosity：4000-12000CPS, glue paints the adhesion strength that dry glue thickness is 0.025mm：It is more than
2000g/25mm.The electroconductive binder is coated on adhesion part, thickness is 0.2mm, uses 300nm intensity for 600 μ
w/cm2After ultraviolet light 3min, first metallic support, the second metallic support are pressed on to the area for being coated with adhesive
Domain, using 350nm 500 μ w/cm2Ultraviolet light 30min.
Embodiment 7
The present embodiment provides a kind of type infrared LEDs support, its structure such as embodiment 1.First metallic support, the second metal
The preferred copper metal of support is made.
It is preferred that, the present embodiment can especially select a kind of electroconductive binder, and its raw material is by weight by 55 parts of acrylic acid
Glue, 0.06 part of '-diphenylmethane diisocyanate, 9 parts of copper powders, 2 parts of butyl acetates, 4 parts of dibenzoyl methanes, 0.7 part of benzene second
Ketone, 0.2 part of potassium hydroxide, 0.08 part of zinc sulfate, 6 parts of glycerine.Described acrylic acid glue preferred oil acrylic acid glue, can
Realized with commercially available prod, be especially preferably viscosity：4000-12000CPS, it is the viscous of 0.025mm that glue, which paints dry glue thickness,
Put forth effort：More than 2000g/25mm.The electroconductive binder is coated on adhesion part, thickness is 0.2mm, using 300nm's
Intensity is 600 μ w/cm2After ultraviolet light 3min, first metallic support, the second metallic support are pressed on be coated with it is viscous
The region of mixture, using 350nm 500 μ w/cm2Ultraviolet light 30min.
Embodiment 8（'-diphenylmethane diisocyanate）
The present embodiment provides a kind of type infrared LEDs support, its structure such as embodiment 1.First metallic support, the second metal
The preferred copper metal of support is made.
It is preferred that, the present embodiment can especially select a kind of electroconductive binder, and its raw material is by weight by 50 parts of acrylic acid
Glue, 0.05 part of '-diphenylmethane diisocyanate, 10 parts of copper powders, 2 parts of butyl acetates, 4 parts of dibenzoyl methanes, 0.7 part of benzene second
Ketone, 0.1 part of potassium hydroxide, 0.08 part of zinc sulfate, 6 parts of glycerine.Described acrylic acid glue preferred oil acrylic acid glue, can
Realized with commercially available prod, be especially preferably viscosity：4000-12000CPS, it is the viscous of 0.025mm that glue, which paints dry glue thickness,
Put forth effort：More than 2000g/25mm.The electroconductive binder is coated on adhesion part, thickness is 0.3mm, using 300nm's
Intensity is 600 μ w/cm2After ultraviolet light 3min, first metallic support, the second metallic support are pressed on be coated with it is viscous
The region of mixture, using 350nm 500 μ w/cm2Ultraviolet light 30min.
Conductive effect is tested
The adhesive edges bonded in the first metallic support use the copper electrode of adhesive bonding first；In the second metal branch
The adhesive edges that frame is bonded use the copper electrode of adhesive bonding second；The distance of copper pin and metallic support is 0.5mm.Using
The resistance that Estimate of Resistance for DC Low Resistance tester is tested between the first metallic support and the first copper electrode, the second metallic support and the second copper electrode
Anti-, its result is as shown in table 1.
The impedance test results of table 1
Ageing-resistant test
Using test device as above, measure conductive by accelerated aging test (1KW, xenon lamp ageing oven, 4000 hours)
The stability of adhesive, such as table 2.
The ageing-resistant test of table 2
Peel strength
By the way that peel strength will be measured in the first metallic support and the second metallic support and 10 × 10cm ceramic substrate.
The width of frame bottom is 2mm.Consumption and the curing such as embodiment of adhesive.Tried using purchased from Frolyt 90 ° of strippings
Test before device measuring peel strength, sample is kept at room temperature at least two hours.For the peel strength of all records
Value, uses 8.8mm/sec peeling rate.As shown in table 3.Again in accelerated aging test (1KW, xenon lamp ageing oven, 4000
Hour) peel strength is tested afterwards.As shown in table 3.
The peel strength test of table 3
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto.
The invention discloses technical scope in, arbitrary variations and alternatives should be all included within the scope of the present invention.This
Invention unspecified part, belongs to general knowledge as well known to those skilled in the art.
Claims (1)
1. the first metallic support and the second metal branch are provided with a kind of infrared LEDs support, including a pcb board, the pcb board
Frame, is provided with intermediate insulating layer, the first metallic support and the second metallic support between the first metallic support and the second metallic support
For copper stent, first metallic support and the second metallic support are bonded on pcb board by electroconductive binder；
The electroconductive binder, its raw material by weight most based on by 65 parts of acrylic acid glue, 0.06 part of '-diphenylmethane diisocyanate,
8 parts of copper powders, 1 part of butyl acetate, 2 parts of dibenzoyl methanes, 0.7 part of acetophenone, 0.2 part of potassium hydroxide, 0.09 part of zinc sulfate, 6
Part glycerine；
The electroconductive binder is is coated on adhesion part by its application method, and thickness is 0.2mm, using 300nm intensity
For 600 μ w/cm2After ultraviolet light 3min, first metallic support, the second metallic support are pressed on and are coated with adhesive
Region, using 350nm 500 μ w/cm2Ultraviolet light 30min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510266357.9A CN104835900B (en) | 2015-05-22 | 2015-05-22 | A kind of infrared LEDs support |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510266357.9A CN104835900B (en) | 2015-05-22 | 2015-05-22 | A kind of infrared LEDs support |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104835900A CN104835900A (en) | 2015-08-12 |
| CN104835900B true CN104835900B (en) | 2017-08-15 |
Family
ID=53813648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510266357.9A Active CN104835900B (en) | 2015-05-22 | 2015-05-22 | A kind of infrared LEDs support |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104835900B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107086890A (en) * | 2017-05-17 | 2017-08-22 | 西安科锐盛创新科技有限公司 | Infrared communication emitter and system |
| CN107331748B (en) * | 2017-05-17 | 2019-07-16 | 西安科锐盛创新科技有限公司 | Infrared light supply |
| CN111293208A (en) * | 2020-04-14 | 2020-06-16 | 上海灿瑞科技股份有限公司 | Carrier device for infrared emitting diode |
| CN111293207A (en) * | 2020-04-14 | 2020-06-16 | 上海灿瑞科技股份有限公司 | Infrared emitting diode device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2468158Y (en) * | 2001-02-01 | 2001-12-26 | 光鼎电子股份有限公司 | Light-emitting diode (LED) |
| CN201804911U (en) * | 2010-09-09 | 2011-04-20 | 谢适发 | LED chip with ceramic substrate |
| CN102064267A (en) * | 2010-11-02 | 2011-05-18 | 佛山市国星光电股份有限公司 | Light emitting diode (LED) support unit for display screen, LED support and method for manufacturing LED support unit |
| CN204668353U (en) * | 2015-05-22 | 2015-09-23 | 深圳莱特光电有限公司 | A kind of novel infrared LED support |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101007131B1 (en) * | 2008-11-25 | 2011-01-10 | 엘지이노텍 주식회사 | Light emitting device package |
-
2015
- 2015-05-22 CN CN201510266357.9A patent/CN104835900B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2468158Y (en) * | 2001-02-01 | 2001-12-26 | 光鼎电子股份有限公司 | Light-emitting diode (LED) |
| CN201804911U (en) * | 2010-09-09 | 2011-04-20 | 谢适发 | LED chip with ceramic substrate |
| CN102064267A (en) * | 2010-11-02 | 2011-05-18 | 佛山市国星光电股份有限公司 | Light emitting diode (LED) support unit for display screen, LED support and method for manufacturing LED support unit |
| CN204668353U (en) * | 2015-05-22 | 2015-09-23 | 深圳莱特光电有限公司 | A kind of novel infrared LED support |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104835900A (en) | 2015-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104835900B (en) | A kind of infrared LEDs support | |
| CN203910792U (en) | A single-end power supply omnidirectional LED lamp filament | |
| CN204668353U (en) | A kind of novel infrared LED support | |
| CN101635327A (en) | Packaging method of LED | |
| CN103094461B (en) | Optical wavelength transition components, its preparation method and white light emitting device | |
| CN204067353U (en) | The integrated COB light source encapsulating structure of a kind of great power LED | |
| CN204456764U (en) | A kind of heating floor | |
| CN203932105U (en) | The die bond bonding wire structure of bipolar electrode chip | |
| CN208589464U (en) | A kind of low light attenuation LED | |
| CN202480487U (en) | High-strength phenolic paper glass cloth light-shielding double-sided copper clad laminate (CCL) | |
| CN202327688U (en) | Light emitting diode (LED) lighting structure for heat conducting pipe | |
| CN205014196U (en) | Light -emitting diode (LED) tube lamp | |
| CN2915119Y (en) | An incense fumigator | |
| CN105244432A (en) | LED point-like COB module and manufacturing method thereof | |
| CN207455280U (en) | A kind of LED photovoltaic glass of SGP doublings | |
| CN205069686U (en) | LED punctiform formula COB module | |
| CN209526085U (en) | A kind of integrated LED refrigerator lamp | |
| CN204792890U (en) | Novel COB base plate | |
| CN204464277U (en) | A kind of can the COBLED light source sheet of bending pottery | |
| CN203880472U (en) | LED lamp integrating ceramic substrate integrated optical source with ceramic radiator | |
| CN204254306U (en) | A kind of spiral LED | |
| CN204303809U (en) | Possesses the LED silk of positive temperature voltage compensate function | |
| CN203434202U (en) | Highly-reliable high-efficiency LED lamp bead | |
| CN211509431U (en) | Double-insulation aluminum substrate | |
| CN201788996U (en) | Novel light-emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 518000, 95, Fifth Industrial Zone, Mashan village, Gongming Town, Shenzhen, Guangdong, Baoan District Applicant after: SHENZHEN LIGHT ELECTRONICS CO., LTD. Address before: 518000, 95, Fifth Industrial Zone, Mashan village, Gongming Town, Shenzhen, Guangdong, Baoan District Applicant before: Shenzhen LIGHT Electronics Co., Ltd. |
|
| COR | Change of bibliographic data | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |