CN111293208A - Carrier device for infrared emitting diode - Google Patents
Carrier device for infrared emitting diode Download PDFInfo
- Publication number
- CN111293208A CN111293208A CN202010289809.6A CN202010289809A CN111293208A CN 111293208 A CN111293208 A CN 111293208A CN 202010289809 A CN202010289809 A CN 202010289809A CN 111293208 A CN111293208 A CN 111293208A
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- Prior art keywords
- carrier
- carrier device
- emitting diode
- infrared
- light
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- 239000000463 material Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000003365 glass fiber Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- -1 etc.) Polymers 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a carrier device for an infrared emission diode, which mainly comprises a bottom carrier, a side wall and a reflecting part, wherein the side wall is arranged on and surrounds the top of the bottom carrier, and the reflecting part is arranged on the inner wall of the side wall and generates at least one reflected light, wherein the half angle of the at least one reflected light is equal to or less than 15 degrees, so that the carrier device for the infrared emission diode can realize various optical field configurations of the infrared emission diode, and the effects of improving the application field and the use convenience of the infrared emission diode are achieved.
Description
Technical Field
The present invention relates to a carrier device, and more particularly, to a carrier device for an infrared emitting diode.
Background
The infrared diode has the advantages of power saving, fast response speed, long lifetime, and small size, and is widely applied in the fields of reading, communication, or sensing, such as signal transmission, night monitoring, etc.
The conventional infrared diode (e.g. infrared chip) will be matched with a lens to form a specific light field pattern according to the application field or product thereof, so as to meet the market demand.
However, since the light emitted from the infrared diode device usually has a characteristic of a total angle of 120 to 140 degrees, a larger angle results in less light field patterns (e.g., less laser diodes) formed by the light emitted from the infrared diode device, thereby limiting the application fields and industries of the infrared diode device.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, it is a primary object of the present invention to provide a carrier device for an infrared light emitting diode to generate reflected light with a half angle equal to or less than 15 degrees, thereby realizing more diversified light field pattern configurations, thereby improving the application field and convenience of the infrared light emitting diode.
In order to achieve the purpose, the invention adopts the following main technical means: a carrier device for an infrared emitting diode is provided, comprising:
a bottom carrier;
a side wall disposed around the top of the bottom carrier; and
the reflecting part is arranged on the inner wall of the side wall and generates at least one reflected light, wherein the half angle of the at least one reflected light is equal to or less than 15 degrees.
In a preferred embodiment, the carrier device further comprises an electrode portion connected to the bottom of the bottom carrier and configured to be electrically connected to an external control circuit.
In a preferred embodiment, the material of the bottom carrier is ceramic, metal or glass fiber.
In a preferred embodiment, the material of the sidewall is metal, ceramic, plastic or plastic with a reflective coating.
In a preferred embodiment, the sidewall forms a reflective cavity at the top of the bottom carrier.
In a preferred embodiment, a side of the reflection portion facing the reflection cavity is arc-shaped.
In a preferred embodiment, the arc of the circular arc is 0.2 to 1.
In a preferred embodiment, the half angle of the reflected light is between 4 and 15 degrees.
In a preferred embodiment, the material of the reflective portion is metal.
The carrier device of the invention can generate reflected light with a half angle equal to or less than 15 degrees by the reflection part, thereby realizing more diversified light field pattern configuration by matching with the infrared emitting diode of the carrier device of the invention, and effectively achieving the effects of improving the application field and the use convenience of the infrared emitting diode.
Drawings
Fig. 1 is a schematic diagram of an architecture of a carrier device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of another structure of a carrier device according to an embodiment of the invention;
FIG. 3 is a schematic diagram of an infrared light emitting diode device according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an embodiment of a light field pattern of an infrared light emitting diode device according to the present invention;
FIG. 5 is a diagram of a second embodiment of a light field pattern of an infrared light emitting diode device according to the present invention; and
FIG. 6 is a third schematic diagram of an embodiment of a light field pattern of an infrared light emitting diode device according to the present invention.
Reference numerals:
100-Carrier device 110-bottom Carrier
111-top 112-bottom
120-side wall 121-top
122-bottom 123-reflective cavity
130-reflection part 140-electrode part
200-Infrared diode element 300-lens
1000-infrared emitting diode device
Detailed Description
For a fuller understanding of the objects, features and advantages of the present invention, reference should be made to the following detailed description taken in conjunction with the accompanying drawings, in which:
referring to fig. 1, a carrier device 100 includes a bottom carrier 110, a sidewall 120, a reflective portion 130, and an electrode portion 140, wherein the carrier device 100 is used for carrying an ir-emitting diode element and an optical element.
The bottom carrier 110 has a top portion 111 and a bottom portion 112, the top portion 111 is used for carrying the sidewall 120, the reflective portion 130 and the infrared light emitting diode element (not shown), the bottom portion 112 is connected to the electrode portion 140, so that the infrared light emitting diode element can be electrically connected to the electrode portion 140 through the bottom carrier 110 to receive a control signal provided by an external control circuit (e.g., a driving circuit).
The sidewall 120 has a top portion 121 and a bottom portion 122, the bottom portion 122 surrounds and is connected to the top portion 111 of the bottom carrier 110, and forms a reflective cavity 123 with the top portion 111 of the bottom carrier 110.
The reflection part 130 is disposed on the inner wall of the sidewall 120 and connected to the inner wall of the sidewall 120. The reflection portion 130 is used for reflecting the light emitted by the infrared light emitting diode element to generate corresponding reflected light, wherein the half angle of the reflected light is equal to or less than 15 degrees.
Therefore, the infrared light emitting diode element can receive the control signal through the carrier device 100 and emit light according to the control signal, and the carrier device 100 can adjust the light emitted by the infrared light emitting diode element into reflected light with a half angle equal to or less than 15 degrees, so that the adjustable range of the reflected light is enlarged, and thus, more diversified light field pattern configurations can be realized, the carrier device 100 can be applied to different market requirements, and the effects of improving the application field and the use convenience are effectively achieved.
In the preferred embodiment, the half angle of the reflected light is preferably between 4 and 15 degrees.
In the preferred embodiment, the material of the bottom carrier 110 is ceramic (alumina, aluminum nitride, etc.), metal (copper, nickel, palladium, gold, etc.), or glass fiber (FR-4, G10, etc.), and the invention is not limited thereto.
In the preferred embodiment, the bottom carrier 110 may be coated with a metallic material.
In the preferred embodiment, the infrared light emitting diode device can be electrically connected to the electrode portion 140 through the metal material coated on the bottom carrier 110; in other embodiments, the infrared light emitting diode device can be electrically connected to the electrode portion 140 through a conductive via (not shown) of the bottom carrier 110, and the invention is not limited thereto.
In the preferred embodiment, the material of the sidewall 120 is metal, ceramic, plastic (such as PPA resin, LEP, etc.), or plastic with reflective coating, and the material of the reflective coating can be metal, and the invention is not limited thereto.
In the preferred embodiment, the thickness of the reflective part 130 is thicker as the reflective part 130 is closer to the top 111 of the bottom carrier 110, and the side of the reflective part 130 facing the reflective cavity 123 is arc-shaped, so that the reflective cavity 123 is approximately bowl-shaped.
In the preferred embodiment, the arc of the circular arc is 0.2 to 1, i.e. the angle is 11.5 to 57.3 degrees.
In a preferred embodiment, the arc of the circular arc is 0.24, i.e. the angle is 14 degrees; in another preferred embodiment, the arc of the circular arc is 0.97, i.e. the angle is 56 degrees.
In the preferred embodiment, the material of the reflective portion 130 is metal (gold, silver, etc.), and the invention is not limited thereto.
In the preferred embodiment, the bottom carrier 110, the sidewall 120 and the reflective portion 130 may be fixed by an adhesive, and the invention is not limited thereto.
In an embodiment, the bottom carrier 110, the sidewall 120 and the reflective portion 130 may be integrally formed (as shown in fig. 2), and thus, in this embodiment, the bottom carrier 110, the sidewall 120 and the reflective portion 130 have the same material.
In the preferred embodiment, the bottom carrier 110 may be one of a circle, an ellipse, a quadrangle or a polygon, and the sidewall 120 forms a circular, an ellipse, a quadrangle or a polygon opening corresponding to the bottom carrier 110, and the invention is not limited thereto.
The size of the opening may be a length, a width, an area, a diameter or a major axis according to the implementation of the opening (circular, oval, quadrilateral or polygonal), and the invention is not limited thereto.
FIG. 3 shows a preferred embodiment of the carrier device 100 for implementing an IR-emitting diode device, the IR-emitting diode device 1000 includes a carrier device 100, an IR diode element 200 (e.g. IR chip) and a lens 300.
The carrier device 100 is used for accommodating and carrying the infrared diode device 200, for example, the infrared diode device 200 is located in the reflective cavity 123 and disposed on the top 111 of the bottom carrier 110, wherein the infrared diode device 200 is used for emitting light according to the received control signal. Meanwhile, the carrier device 100 is further used for carrying a lens 300, for example, the lens 300 is used as the aforementioned optical element and is further disposed on the top portion 121 of the sidewall 120, wherein the lens 300 is used for changing the light field of the received light.
Therefore, the light emitted from the infrared diode 200 can generate the reflected light with a half angle equal to or less than 15 degrees (preferably, the half angle is between 4 and 15 degrees) and reflected toward the lens 300 by the reflection of the reflection portion 130, and the reflected light can generate the light with the half angle between 4 and 70 degrees after passing through the lens 300, in other words, the half angle of the light generated by the infrared emitting diode 1000 can be between 4 and 70 degrees. Since the reflected light has a wide adjustment range, for example: the adjusting range of the infrared emitting diode device 1000 of the present invention can be 4-70 degrees, and the adjusting range of the known infrared emitting diode device is 120-140 degrees, so that the infrared emitting diode device 1000 of the present invention can realize the light field pattern that can not be realized by the known infrared emitting diode device, as shown in fig. 4-6, wherein fig. 4 is a schematic diagram of the light field pattern embodiment; FIG. 5 is a diagram of a second embodiment of a light field pattern; fig. 6 is a third schematic view of an embodiment of a light field pattern of grating light, so that the infrared emitting diode device 1000 of the present invention can realize various light field pattern configurations, thereby effectively achieving the efficacy of improving the application field and the convenience of use.
For example, since the IR emitting diode device 1000 using the carrier device 100 of the present invention can generate light with a half angle of 4-70 degrees, the light field pattern realized by a laser diode device (e.g., VCSEL) can be realized, i.e., the IR emitting diode device 1000 using the carrier device 100 of the present invention can be used to replace the existing laser diode device. In addition, since the cost of the infrared emitting diode is lower than that of a laser diode, in addition, the lens 300 of the present invention can be realized by the existing lens product, the infrared light does not harm the human eye like the laser light, and the infrared light does not harm the human eye when the lens is accidentally dropped, so the infrared emitting diode device 1000 using the carrier device 100 of the present invention can be applied not only to the depth sensing (or stereo image sensing) field such as human face recognition, but also has the effects of reducing the cost and improving the safety in use compared with the laser diode device.
In the preferred embodiment, the lens 300 is a Diffractive Optical Element (DOE) or a Microlens (microlenses), and the invention is not limited thereto.
In the preferred embodiment, since the half angle of the reflected light is equal to or less than 15 degrees, the lens 300 can adjust the light field of the reflected light and generate a light field pattern of geometric light (e.g., a grating light, a plurality of point lights, etc.) (as shown in fig. 4-6).
In the preferred embodiment, the lens 400 and the top portion 121 of the sidewall 120 are adhered and fixed to each other by an adhesive (thermoplastic adhesive, thermosetting adhesive), and the invention is not limited thereto.
In summary, since the carrier device 100 of the present invention can generate the reflected light with the half angle equal to or less than 15 degrees, it can realize more diversified light field pattern configurations, and effectively achieve the efficacy of improving the application field and the convenience of the infrared emitting diode.
While the invention has been described in terms of preferred embodiments, it will be understood by those skilled in the art that the examples are intended in a descriptive sense only and not for purposes of limitation. It should be noted that all changes and substitutions equivalent to the embodiments are intended to be included within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the defined claims.
Claims (9)
1. A carrier device for an infrared emitting diode, comprising:
a bottom carrier;
a side wall disposed around the top of the bottom carrier; and
the reflecting part is arranged on the inner wall of the side wall and generates at least one reflected light, wherein the half angle of the at least one reflected light is equal to or less than 15 degrees.
2. The carrier device of claim 1 further comprising an electrode portion coupled to the bottom of the bottom carrier for electrical connection to an external control circuit.
3. The carrier device according to claim 1, wherein the material of the bottom carrier is ceramic, metal or glass fiber.
4. The carrier device according to claim 1, wherein the material of the side walls is metal, ceramic, plastic or plastic with a reflective coating.
5. The carrier device of claim 1 wherein the sidewall forms a reflective cavity at the top of the bottom carrier.
6. The carrier device according to claim 1, characterized in that the side of the reflective portion facing the reflective cavity is rounded.
7. The carrier device of claim 6 wherein the arc is between 0.2 and 1.
8. The carrier device of claim 1 wherein the half angle of the reflected light is between 4 and 15 degrees.
9. The carrier device of claim 1 wherein the material of the reflective portion is a metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010289809.6A CN111293208A (en) | 2020-04-14 | 2020-04-14 | Carrier device for infrared emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010289809.6A CN111293208A (en) | 2020-04-14 | 2020-04-14 | Carrier device for infrared emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111293208A true CN111293208A (en) | 2020-06-16 |
Family
ID=71028769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010289809.6A Pending CN111293208A (en) | 2020-04-14 | 2020-04-14 | Carrier device for infrared emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111293208A (en) |
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| US20080081531A1 (en) * | 2006-10-02 | 2008-04-03 | Duong Dung T | LED system and method |
| US20090116017A1 (en) * | 2007-10-23 | 2009-05-07 | Zhi Xu | Optical device components |
| CN102686936A (en) * | 2009-08-20 | 2012-09-19 | 伊鲁米特克有限公司 | System and method for a phosphor coated lens |
| CN102939670A (en) * | 2010-06-16 | 2013-02-20 | 欧司朗光电半导体有限公司 | Optoelectronic component |
| CN103637768A (en) * | 2007-09-13 | 2014-03-19 | 密苏里大学董事会 | Optical device components |
| CN104835900A (en) * | 2015-05-22 | 2015-08-12 | 深圳莱特光电有限公司 | Novel infrared LED support |
| CN207458993U (en) * | 2017-07-14 | 2018-06-05 | 晶能光电（江西）有限公司 | Reflector and LED product |
| CN212033044U (en) * | 2020-04-14 | 2020-11-27 | 上海灿瑞科技股份有限公司 | Carrier device for infrared emitting diode |
-
2020
- 2020-04-14 CN CN202010289809.6A patent/CN111293208A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101048879A (en) * | 2004-10-25 | 2007-10-03 | 奥斯兰姆奥普托半导体有限责任公司 | Semiconductor component emitting electromagnetic radiation and component housing |
| US20080105886A1 (en) * | 2004-10-25 | 2008-05-08 | Osram Opto Semiconductors Gmbh | Semiconductor Component Emitting Electromagnetic Radiation And Component Housing |
| US20070152230A1 (en) * | 2006-01-05 | 2007-07-05 | Duong Dung T | Separate optical device for directing light from an LED |
| US20080081531A1 (en) * | 2006-10-02 | 2008-04-03 | Duong Dung T | LED system and method |
| CN101553928A (en) * | 2006-10-02 | 2009-10-07 | 伊鲁米特克有限公司 | LED system and method |
| CN103637768A (en) * | 2007-09-13 | 2014-03-19 | 密苏里大学董事会 | Optical device components |
| US20090116017A1 (en) * | 2007-10-23 | 2009-05-07 | Zhi Xu | Optical device components |
| CN102686936A (en) * | 2009-08-20 | 2012-09-19 | 伊鲁米特克有限公司 | System and method for a phosphor coated lens |
| CN102939670A (en) * | 2010-06-16 | 2013-02-20 | 欧司朗光电半导体有限公司 | Optoelectronic component |
| CN104835900A (en) * | 2015-05-22 | 2015-08-12 | 深圳莱特光电有限公司 | Novel infrared LED support |
| CN207458993U (en) * | 2017-07-14 | 2018-06-05 | 晶能光电（江西）有限公司 | Reflector and LED product |
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