CN101635327A - Packaging method of LED - Google Patents
Packaging method of LED Download PDFInfo
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- CN101635327A CN101635327A CN200910054581A CN200910054581A CN101635327A CN 101635327 A CN101635327 A CN 101635327A CN 200910054581 A CN200910054581 A CN 200910054581A CN 200910054581 A CN200910054581 A CN 200910054581A CN 101635327 A CN101635327 A CN 101635327A
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Abstract
The invention discloses a packaging method of LEDs. The packaging method of the LEDs comprises the following steps: die bonding: crystal particles are placed on an adhesive-dispensed bracket; baking: semi-products of the fixed crystal particles are baked to cause the crystal particles to be fixedly adhered to the bracket; wire bonding: two gold wires of the baked crystal particles are introduced on a positive electrode and a negative electrode; powdering: a light-emitting medium formulation is powdered on a light-emitting surface of crystal particles of the LEDs, wherein, the light-emitting surface forms 360 degrees; baking: the bracket which is powdered with the light-emitting medium is placed into a high-temperature oven for baking so as to cure the bracket; packaging: epoxy glue water is injected into a die cavity or the upper side and lower side of the bracket; baking: high-temperature baking is performed on the packaged bracket to cure the injected epoxy glue water; and performing testing, light-splitting and packaging steps. The LEDs prepared by the packaging method has the advantages of being capable of realizing light-emitting at two sides, effectively increasing lightening angle, having strong applicability and being suitable for mass production.
Description
Technical field
The present invention relates to a kind of light emitter diode seal method, be specifically related to a kind of method for packing that increases the lumination of light emitting diode angle.
Background technology
LED is a kind of solid-state semiconductor device, and it can directly be converted into light to electricity.The heart of LED is a semi-conductive wafer, and an end of wafer is attached on the support, and an end is a negative pole, and the other end connects the positive pole of power supply.Semiconductor wafer is made up of three parts, and a part is a P type semiconductor, occupies an leading position in its hole, the inside, and the other end is a N type semiconductor, mainly is electronics here, the middle normally quantum well in 1 to 5 cycle.When electric current acted on this wafer by lead, electronics and hole will be pushed to quantum well, and electronics will send energy with the form of photon, the luminous principle of LED that Here it is then with hole-recombination in quantum well.And the light wavelength color of light just is by the material decision that forms the P-N knot.
Conventional LED all adopts unidirectional bright dipping form.Generally use up lens at the outgoing window and handle, so its maximum shooting angle has certain directive property smaller or equal to 180 °, great majority are applied to indication and demonstration field.Along with the raising of LED performance and the expansion of application, the LED lamp of this unidirectional bright dipping, aspect night scene light fixture (as: lamp string), compare with conventional bulb, the unidirectional directive property that it is intrinsic, cause visual angle less, influence attractive in appearance, also make simultaneously the LED device energy-conservation, the life-span long and photochromic good advantage is subjected to very big folding and supports.Thereby the method for packing that how to improve LED makes its effective lighting angle that increases become present valuable research topic.
Summary of the invention
Technical problem to be solved by this invention provides a kind of light emitter diode seal method, and it can imitate the lighting angle that increases LED.
In order to solve above technical problem, the invention provides a kind of light emitter diode seal method, comprise the steps:
(1) solid brilliant, be about to crystal grain and be positioned over the center of having put the support of glue, the center of described support is hollow-core construction or transparent configuration;
(2) baking, the semi-finished product that soon fixed crystal grain toast, and make crystal grain and support fix adhesion;
(3) bonding wire had soon toasted the crystal grain that and will have drawn two gold threads at both positive and negative polarity;
(4) some powder is about to light transmission medium allotment object point on the light-emitting face of LED crystal particle, and the exit facet of described diode crystal particle is 360 °;
(5) baking, the support that is about to the good light transmission medium of point is put into the high temperature baking box and is toasted, and makes its curing;
(6) encapsulation is about to epoxy glue injection die cavity or support both sides up and down;
(7) baking, the support after being about to encapsulate carries out high-temperature baking, makes the epoxy glue water cure that is injected;
Test, beam split and packaging step.
The LED that technology of the present invention is made can realize the bilateral bright dipping, has effectively increased lighting angle (lighting angle maximum can to 360 °), and simple in structure, and exploitativeness is strong, is fit to produce in batches.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Fig. 1 is a LED structural representation of the present invention;
Fig. 2 is a LED end view of the present invention.
Reference numeral is among the figure, 1, support; 2, transparent enclosure resin; 3, gold thread; 4, chip.
Embodiment
As depicted in figs. 1 and 2, light-emitting diode of the present invention, comprise: support 1, transparent enclosure resin 2, gold thread 3 (being wire), led chip 4, fluorescent material and crystal-bonding adhesive (figure does not show), the center of support 1 is a hollow-core construction (or transparent configuration, figure does not show), led chip 4 two ends are fixed on the center of support 1 by crystal-bonding adhesive.Support 1 is surface mount (Surface MountTechnology is called for short a SMT) support, and crystal-bonding adhesive is insulating cement or elargol.Led chip 4 both sides bright dippings, transparent enclosure resin 2 is encapsulated in the both sides up and down of SMT support 1, and the transparent enclosure resin is an epoxy resin.
Further, SMT support 1 of the present utility model can be selected two kinds of transparent material and nontransparent materials, and when SMT support 1 was transparent material, the lighting angle of light-emitting diode of the present utility model can reach 360 °; When SMT support 1 was nontransparent material, the lighting angle scope of light-emitting diode of the present utility model was 240 °-360 ° (Fig. 3).
LED production method of the present invention comprises the steps:
(1) solid brilliant, be about to crystal grain and be positioned on the support of having put glue;
(2) baking, the semi-finished product that soon fixed crystal grain toast, and make crystal grain and support fix adhesion;
(3) bonding wire had soon toasted the crystal grain that and will have drawn two gold threads at both positive and negative polarity;
(4) some powder is about to light transmission medium allotment object point on the light-emitting face of LED crystal particle, and the exit facet of diode crystal particle of the present invention is 360 °
(5) baking, the support that is about to the good light transmission medium of point is put into the high temperature baking box and is toasted, and makes its curing; Preferably, baking temperature is at 130 ℃-160 ℃, and stoving time is 1-2 hour.
(6) encapsulation is about to epoxy glue injection die cavity or support both sides up and down, thereby but realize LED dual-side emissive of the present invention, effectively increase lighting angle, the lighting angle maximum can be to 360 °;
(7) baking, the support after being about to encapsulate carries out high-temperature baking, makes the epoxy glue water cure that is injected; Preferably, baking temperature is 120 ℃-130 ℃, and stoving time is 8-10 hour
Test (both positive and negative polarity is separated), beam split (classifying according to the voltage of product, brightness, color etc.) and packaging step all adopt existing general technology to get final product.
The LED that technology of the present invention is made can 360 ° of bright dippings, and non-directive has each of spot light The item advantage; For the light fixture of the two-way bright dipping of needs, the general easier formation of LED can reduce LED Quantity reduces cost, and improves reliability.
Claims (3)
1, a kind of light emitter diode seal method; It is characterized in that, comprise the steps:
(1) solid brilliant, be about to crystal grain and be positioned over the center of having put the support of glue, the center of described support is hollow-core construction or transparent configuration;
(2) baking, the semi-finished product that soon fixed crystal grain toast, and make crystal grain and support fix adhesion;
(3) bonding wire had soon toasted the crystal grain that and will have drawn two gold threads at both positive and negative polarity;
(4) some powder is about to light transmission medium allotment object point on the light-emitting face of LED crystal particle, and the exit facet of described diode crystal particle is 360 °;
(5) baking, the support that is about to the good light transmission medium of point is put into the high temperature baking box and is toasted, and makes its curing;
(6) encapsulation is about to epoxy glue injection die cavity or support both sides up and down;
(7) baking, the support after being about to encapsulate carries out high-temperature baking, makes the epoxy glue water cure that is injected;
Test, beam split and packaging step.
2, light emitter diode seal method as claimed in claim 1 is characterized in that, the described baking temperature of step (5) is at 130 ℃-160 ℃, and stoving time is 1-2 hour.
3, light emitter diode seal method as claimed in claim 1 is characterized in that, the described baking temperature of step (7) is 120 ℃-130 ℃, and stoving time is 8-10 hour.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910054581A CN101635327A (en) | 2009-07-09 | 2009-07-09 | Packaging method of LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910054581A CN101635327A (en) | 2009-07-09 | 2009-07-09 | Packaging method of LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101635327A true CN101635327A (en) | 2010-01-27 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910054581A Pending CN101635327A (en) | 2009-07-09 | 2009-07-09 | Packaging method of LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101635327A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013071510A1 (en) * | 2011-11-18 | 2013-05-23 | Liang Qinghui | Horizontal omnidirectional light-emitting led |
| WO2013177735A1 (en) * | 2012-05-28 | 2013-12-05 | 深圳市众明半导体照明有限公司 | Led light source and illuminating apparatus |
| CN104425688A (en) * | 2013-08-28 | 2015-03-18 | 宏齐科技股份有限公司 | Packaging of Multiple LED Chips |
| CN106251784A (en) * | 2016-08-25 | 2016-12-21 | 广东信达光电科技有限公司 | Production method of LED display screen module |
| CN108506751A (en) * | 2018-03-27 | 2018-09-07 | 浙江罗丹照明电器有限公司 | A kind of Crystal lamp compact LED light bulb |
-
2009
- 2009-07-09 CN CN200910054581A patent/CN101635327A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013071510A1 (en) * | 2011-11-18 | 2013-05-23 | Liang Qinghui | Horizontal omnidirectional light-emitting led |
| WO2013177735A1 (en) * | 2012-05-28 | 2013-12-05 | 深圳市众明半导体照明有限公司 | Led light source and illuminating apparatus |
| CN104425688A (en) * | 2013-08-28 | 2015-03-18 | 宏齐科技股份有限公司 | Packaging of Multiple LED Chips |
| CN106251784A (en) * | 2016-08-25 | 2016-12-21 | 广东信达光电科技有限公司 | Production method of LED display screen module |
| CN106251784B (en) * | 2016-08-25 | 2018-09-14 | 广东信达光电科技有限公司 | Production method of L ED display screen module |
| CN108506751A (en) * | 2018-03-27 | 2018-09-07 | 浙江罗丹照明电器有限公司 | A kind of Crystal lamp compact LED light bulb |
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Open date: 20100127 |