CN103629596B - A kind of laser instrument plant lamp and preparation method thereof - Google Patents
A kind of laser instrument plant lamp and preparation method thereof Download PDFInfo
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- CN103629596B CN103629596B CN201210313283.6A CN201210313283A CN103629596B CN 103629596 B CN103629596 B CN 103629596B CN 201210313283 A CN201210313283 A CN 201210313283A CN 103629596 B CN103629596 B CN 103629596B
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Abstract
The invention discloses a kind of laser instrument plant lamp, comprise circuit board, on described circuit board, be packaged with semiconductor laser tube core, above described semiconductor laser tube core, be covered with an even mating plate adapting with described circuit board shape; Described semiconductor laser tube core is edge transmitting type laser instrument, described semiconductor laser is electrically connected by L shaped heat sink with described circuit board, described is L shaped heat sink, comprise L shaped negative electrode layer, L shaped insulating barrier and L shaped anodal layer, inner surface at described L shaped negative electrode layer is provided with L shaped groove, described L shaped anodal layer embeds and is arranged in described L shaped groove, between described L shaped negative electrode layer and L shaped anodal layer, is provided with L shaped insulating barrier. The present invention can provide the light of the required wavelength of plant, has the notable features such as spectrum is good, power is high, the response time is short, volume is little, high reliability, strong durability, low cost, life-span length, environmental protection and energy saving.
Description
Technical field
The present invention relates to a kind of laser instrument plant lamp and preparation method thereof, belong to the technical field of plant illumination light fixture.
Background technology
Only one of Fundamentals of growth and development of plants. Growth, morphogenesis, photosynthesis, the material of light quality to plantMetabolism and gene expression all have regulating and controlling effect. As the 4th generation novel illumination light source, LED illumination has energy-conserving and environment-protective, safetyReliably, volume little, lightweight, be easy to disperse or many important feature that are different from other electric light sources such as combination control etc. FollowThe explosive growth of plant factor, the market of plant illumination also can further expand, and causes plant factor's quantity to increaseMain cause as follows: one, Chinese city population sharply increases, and peasant's quantity constantly reduces, and plant factor is significantly carriedHigh productive capacity, under such situation, plant factor will explosive growth; Two, people's quality of the life constantly promotes,Demand to vegetables in improper season melon and fruit constantly increases, and plant factor can produce various vegetable melon and fruits throughout the year;Three, greenhouse effects cause frequent natural calamity to occur, and plant factor can reduce the damage that natural calamity causes to a great extentLose.
The light source using in traditional plant facility cultivation is generally fluorescent lamp, metal halide lamp, high-pressure mercury lamp and incandescent lamp,These light sources are selected to the adaptability of light according to human eye, and its spectrum has a lot of unnecessary wavelength, to plant growthFacilitation is few. And along with photoelectric technology innovation and production cost decline, LED illumination becomes the first-selection in plant facility cultivation fieldLight source.
Current LED plant illumination mainly faces two technical barriers, and the first, each plant is different to the requirement of light,Concrete plant needs specific wavelength, and the LED of current certain wavelength is not pure monochromatic light, has certain spectral region.The second, intensity of illumination plays an important role to plant growth and morphosis. Luminous energy promotes the tissue of plant and the differentiation of organ,Restricting the speed of growth and the growth ratio of each organ. Illumination deficiency, branch is long and vertical growth gesture is strong, shows as excessive growth and HuangChange. In addition, division and the elongation of the increase of luminous energy promotion cell and differentiation, control cell, therefore will make trees normal growth,Must there is applicable intensity of illumination. In the time that illumination is not enough, root growth is had to obvious inhibitory action, even stop growing.Because current technology is limit, some wavelength LED intensity of illumination can not meet the required luminous energy of plant growth.
Laser output power is large, and monochromaticjty is strong, can replace LED to solve above-mentioned two technical barriers:
For example Chinese periodical " laser technology and application " has been recorded one section of name in 1 monthly magazine 8-13 page in 2005 and has been called " laserThe present situation of plant factor and vision of the future " technical article, article to adopt laser instrument done theory as plant illumination light sourceOn application certainly, but are all basis imaginations that the parameter based on laser output power is made, do not record concrete swashingThe application of light device. Also need to consider multiple hardwares parameter and the packing forms of laser instrument using laser instrument as plant illumination light source, withOn technology contents not yet have report.
In the Photosynthesis Pigment of plant, chlorophyll a plays most important effect. The effect of chlorophyll a, b and green plantsSpectrum is mainly worked by red, blue light, more suitable to the wavelength ratio of ruddiness 640-690nm and blue light 420-470nm.
Chinese patent CN101867150A discloses a kind of semiconductor laser for night vision illumination, and it comprises encapsulating structure,Optical shaping homogenize element, semiconductor Laser device, described optical shaping homogenize element and semiconductor Laser device are positioned at encapsulationIn structure. This patent on pedestal, then adds an encapsulation upper cover coordinating with pedestal by individual laser package, utilizes multiple opticsElement completes the effect that increases angle of scattering, uniform light spots, realize night vision illumination, but this laser instrument also finally by crossing optical glassBe the improvement based on C-MOUNT packaged type, more complicated compared with conventional laser encapsulation, cost of material and preparation cost are allHeight, is unfavorable for using semiconductor laser as lighting apparatus industrialization.
Chinese patent CN1200797A has described a kind of for the vertical cavity surface emitting laser in the illumination of infrared and visible light wave rangeArray. By using several different arrays, each array produces a kind of light of different wave length, can obtain replacing of ordinary light sourceChange. Chip is grouped together by the combination of series coupled and parallel coupled, and each unit is controlled separately, then by multipleThe driving that array package is walked abreast in single housing, this Patent design circuit complicated difficult control.
Chinese patent CN101545582 discloses a kind of beam shaping illumination system of semiconductor laser array. Comprise semiconductorLaser array, the optical system that fast axial light beam divergence angle is converted is carried out angular deflection to light beam on quick shaft directionDevice and the optical system that the slow axis angle of divergence is converted and on slow-axis direction, light beam carried out deflection. Its main points are logicalCross the beam propagation axis degree of deflection on fast axle and slow-axis direction respectively of controlling each laser cell, form one in far fieldThe partially overlap effect of stack of the Gaussian beam of kind of multiple laser cells, thus structure meets the illuminating bundle that visual field requires, spyBe not applicable to the lighting source as face battle array imaging laser radar and laser active illumination detection system. The process of this patentTechnical difficulty is high, complex structure, and cost of manufacture is high, is unsuitable for mass production, is more difficult to meet the low one-tenth of the illumination of plantOriginally, long-life requirement.
Summary of the invention
For above-mentioned technical deficiency, the invention provides a kind of laser instrument plant lamp, this illuminating lamp is with the shape of paster encapsulationFormula is encapsulated on circuit board, adds an even mating plate above illuminating lamp, finally produces the unified laser instrument lamp source of optical wavelength.
The present invention also provides the preparation method of above-mentioned laser instrument plant lamp.
Technical scheme of the present invention is as follows:
A kind of laser instrument plant lamp, comprise circuit board, on described circuit board, be packaged with semiconductor laser tube core,Described semiconductor laser tube core top is covered with an even mating plate adapting with described circuit board shape; Described semiconductor laserTube core is edge transmitting type laser instrument, and described semiconductor laser is electrically connected by L shaped heat sink with described circuit board, described LShape is heat sink, comprises L shaped negative electrode layer, L shaped insulating barrier and L shaped anodal layer, in described L shaped negative electrode layerSurface is provided with L shaped groove, and described L shaped anodal layer embeds and is arranged in described L shaped groove, described L shaped bearingBetween utmost point layer and L shaped anodal layer, be provided with L shaped insulating barrier; Described semiconductor laser tube core is arranged on described L shapedNegative electrode layer inner surface and without the position of L shaped groove.
Preferred according to the present invention, the material of described L shaped negative electrode layer is metal, composition metal or monocrystalline silicon. Described answersAlloy genus refers to two kinds and the synthetic metal material or two with heterogeneous structure of above different types of metal physical methodKind and above metal ingredient be in harmonious proportion in proportion formed metal material.
Preferred according to the present invention, the material of described L shaped anodal layer is metal, composition metal or monocrystalline silicon.
Preferred according to the present invention, the material of described L shaped insulating barrier be glass fibre, pottery, aluminium oxide, zirconia,Silica, silicon nitride, silicone grease or thermal plastic insulation.
Described silicone grease is DX-9041 heat-conducting silicone grease, and popular name is again thermal grease, is to make base oil with extraordinary silicone oil, novel metal oxygenCompound is done filler, is equipped with several functions additive, the paste forming through specific processes. Color has because material is differentDifferent outward appearances. It has good heat conduction, heatproof, insulating properties, is the desirable dielectric material of heat-resisting device, Er QiexingCan be stable, in use can not produce etchant gas, can not exert an influence to contacted metal.
Described thermal plastic insulation is the single-component room temperature vulcanized silicone adhesive stick of a class, have easy to use, adhesive strength is high,After solidifying, be the features such as elastomer, shock resistance, vibrations, solidfied material also has good heat conduction, heat sinking function and excellence simultaneouslyHigh and low temperature resistance and electric property.
A preparation method for laser instrument plant lamp, comprises that step is as follows:
(1) utilize printed circuit board (PCB) adhesive package on the negative pole of circuit board at the horizontal plane of L shaped heat sink L shaped negative electrode layer;
(2) on the P of chip of laser electrode, carry out the vertical plane of gold wire bonding to L shaped anodal layer;
(3) carry out gold wire bonding at the horizontal plane of L shaped anodal layer, by gold wire bonding to the positive pole of circuit board;
(4) multiple semiconductor laser tube cores are encapsulated on above-mentioned circuit board respectively to shape by step (1)-(3)Become spot light, area source or line source, described circuit board is carried out to electric connection;
(5) above described semiconductor laser tube core, be covered with an even mating plate adapting with described circuit board shape. In assemblingGood circuit board outside adds an even mating plate, makes hot spot even, expands emission angle, is suitable for plant cultivation illumination.
The invention has the advantages that:
The present invention is directed to the restriction that a prior art difficult problem overcomes individual laser package form, a kind of laser instrument plant lamp be provided,The light of the required wavelength of plant can be provided, and wave-length coverage covers 400-700nm, has that spectrum is good, power is high, when responseBetween the notable feature such as short, volume is little, high reliability, strong durability, low cost, life-span length, environmental protection and energy saving.
The laser instrument plant lamp that the present invention makes, optical source wavelength is narrow, by selecting different circuit board control laser tube coresTogether with switch, meet the light of the required wavelength of different plant growths. Utilize the present invention when improveing the experiment of plant variety,Can carry out to plant the light irradiation of single wavelength.
Brief description of the drawings
Fig. 1 is the structural representation of the embodiment of the present invention 1;
Fig. 2 is edge transmitting type laser instrument of the present invention and L shaped heat sink syndeton schematic diagram;
In Fig. 1-Fig. 2,1, L shaped negative electrode layer; The vertical plane of 1-1, L shaped negative electrode layer; The water of 1-2, L shaped negative electrode layerPlane; 2, L shaped insulating barrier; 3, L shaped anodal layer; The vertical plane of 3-1, L shaped anodal layer; 3-2, L shaped anodal layerHorizontal plane; 4, the bonding gold wire between chip of laser P electrode and the vertical plane of L shaped anodal layer; 5, the water of L shaped anodal layerBonding gold wire between plane and the positive pole of photoelectric circuit; 6, edge transmitting type semiconductor laser tube core; 6-1, semiconductor swashThe P electrode of light organ pipe core; 7, circuit board; 8, L shaped heat sink; 9, even mating plate.
Detailed description of the invention
Below in conjunction with embodiment and Figure of description, the present invention will be further described, but be not limited to this.
Embodiment 1,
A kind of laser instrument plant lamp, comprise circuit board 7, on described circuit board 7, be packaged with semiconductor laser tube core,Above described semiconductor laser tube core, be covered with an even mating plate 9 adapting with described circuit board 7 shapes; Described semiconductor swashsLight organ pipe core is edge transmitting type laser instrument 6, and described semiconductor laser is electrically connected with described circuit board 7 by L shaped heat sink 8,Described L shaped heat sink 8, comprise L shaped negative electrode layer 1, L shaped insulating barrier 2 and L shaped anodal layer 3, at described LThe inner surface of the negative electrode layer 1 of shape is provided with L shaped groove, and described 3 layers of embedding of L shaped positive pole are arranged on described L shaped recessedIn groove, between described L shaped negative electrode layer 1 and L shaped anodal layer 3, be provided with L shaped insulating barrier 2; Described semiconductor swashsLight organ pipe core is arranged on described L shaped negative electrode layer 3 inner surfaces and the position without L shaped groove.
The material of described L shaped negative electrode layer 1 is copper.
The material of described L shaped anodal layer 3 is copper.
The material of described L shaped insulating barrier 2 is glass fibre.
Embodiment 2,
A laser instrument plant lamp as described in Example 1, its difference is, the material of described L shaped negative electrode layer 1For monocrystalline silicon. The material of described L shaped anodal layer 3 is monocrystalline silicon.
The material of described L shaped insulating barrier 2 is silicone grease. Described silicone grease is DX-9041 heat-conducting silicone grease, and popular name is named again heat radiationCream, it has good heat conduction, heatproof, insulating properties, is the desirable dielectric material of heat-resisting device, and stable performance,In use can not produce etchant gas, can not exert an influence to contacted metal.
Embodiment 3,
A laser instrument plant lamp as described in Example 1, its difference is, the material of described L shaped insulating barrier isThermal plastic insulation, described thermal plastic insulation is the single-component room temperature vulcanized silicone adhesive stick of a class, has easy to use, bondingAfter intensity is high, curing, be the features such as elastomer, shock resistance, vibrations, solidfied material also has good heat conduction, heat radiation merit simultaneouslyEnergy and excellent high and low temperature resistance and electric property.
Embodiment 4,
A preparation method for laser instrument plant lamp, comprises that step is as follows:
(1) utilize printed circuit board (PCB) adhesive package at circuit board 7 the horizontal plane 1-2 of L shaped heat sink 8 L shaped negative electrode layerNegative pole on;
(2) on the P of chip of laser electrode 6-1, carry out spun gold 4 and be bonded to the vertical plane 3-1 of L shaped anodal layer;
(3) carry out gold wire bonding at the horizontal plane 3-2 of L shaped anodal layer, spun gold 5 is bonded on the positive pole of circuit board 7;
(4) multiple semiconductor laser tube cores are encapsulated on above-mentioned circuit board 7 by step (1)-(3) respectively,Form spot light, area source or line source, described circuit board 7 is carried out to electric connection;
(5) above described semiconductor laser tube core, be covered with an even mating plate 9 adapting with described circuit board 7 shapes. ?Circuit board 7 outsides that assemble add an even mating plate 9, make hot spot even, expand emission angle, are suitable for plant cultivation illumination.
Claims (5)
1. a laser instrument plant lamp, this illuminating lamp comprises circuit board, on described circuit board, is packaged with semiconductor laserOrgan pipe core, above described semiconductor laser tube core, be covered with an even mating plate adapting with described circuit board shape; Described halfConductor laser tube core is edge transmitting type laser instrument, it is characterized in that, described semiconductor laser tube core by L shaped heat sink withThe electrical connection of described circuit board, described is L shaped heat sink, comprises L shaped negative electrode layer, L shaped insulating barrier and L shaped positive poleLayer, is provided with L shaped groove at the inner surface of described L shaped negative electrode layer, and described L shaped anodal layer embeds and is arranged on instituteIn the L shaped groove of stating, between described L shaped negative electrode layer and L shaped anodal layer, be provided with L shaped insulating barrier; Describedly partly leadBody laser tube core is arranged on described L shaped negative electrode layer inner surface and the position without L shaped groove.
2. a kind of laser instrument plant lamp according to claim 1, is characterized in that, described L shaped negative electrode layerMaterial is metal, composition metal or monocrystalline silicon.
3. a kind of laser instrument plant lamp according to claim 1, is characterized in that, described L shaped anodal layerMaterial is metal, composition metal or monocrystalline silicon.
4. a kind of laser instrument plant lamp according to claim 1, is characterized in that, described L shaped insulating barrierMaterial is glass fibre, pottery, aluminium oxide, zirconia, silica, silicon nitride, silicone grease or thermal plastic insulation.
5. a preparation method for laser instrument plant lamp as claimed in claim 1, is characterized in that, the method comprises stepRapid as follows:
(1) utilize printed circuit board (PCB) adhesive package on the negative pole of circuit board at the horizontal plane of L shaped heat sink L shaped negative electrode layer;
(2) on the P of chip of laser electrode, carry out the vertical plane of gold wire bonding to L shaped anodal layer;
(3) carry out gold wire bonding at the horizontal plane of L shaped anodal layer, by gold wire bonding to the positive pole of circuit board;
(4) multiple semiconductor laser tube cores are encapsulated on above-mentioned circuit board respectively to shape by step (1)-(3)Become spot light, area source or line source, described circuit board is carried out to electric connection;
(5) above described semiconductor laser tube core, be covered with an even mating plate adapting with described circuit board shape.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210313283.6A CN103629596B (en) | 2012-08-29 | 2012-08-29 | A kind of laser instrument plant lamp and preparation method thereof |
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| CN201210313283.6A CN103629596B (en) | 2012-08-29 | 2012-08-29 | A kind of laser instrument plant lamp and preparation method thereof |
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| CN103629596A CN103629596A (en) | 2014-03-12 |
| CN103629596B true CN103629596B (en) | 2016-05-18 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201544764A (en) * | 2014-05-16 | 2015-12-01 | Univ Nat Central | Fluorescent powder lamp with diffusion plate for agricultural application |
| CN105042416A (en) * | 2015-07-24 | 2015-11-11 | 北京中农美景温室工程技术有限公司 | Plant growth light and plant growth system |
| CN108093986A (en) * | 2018-01-22 | 2018-06-01 | 温州大学新材料与产业技术研究院 | A kind of houseplant culture apparatus with laser growth lamp |
| CN108662457B (en) * | 2018-04-09 | 2020-06-30 | 上海应用技术大学 | Method for preparing growth lamp for plant cultivation factory |
| CN108386765A (en) * | 2018-04-12 | 2018-08-10 | 中国科学技术大学先进技术研究院 | A kind of packaged type laser light-supplementing system |
| CN109945079B (en) * | 2019-04-29 | 2021-05-04 | 上海应用技术大学 | Laser module for laser plant lamp, preparation method and application |
| CN110596675A (en) * | 2019-08-21 | 2019-12-20 | 深圳奥锐达科技有限公司 | Laser emission device and laser radar system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2457763Y (en) * | 2000-11-17 | 2001-10-31 | 赵俊祥 | Packaging structure of semiconductor laser |
| CN101867150A (en) * | 2010-06-13 | 2010-10-20 | 山东神戎电子股份有限公司 | Semiconductor laser for night vision illumination |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2012028293A (en) * | 2010-07-25 | 2012-02-09 | Toshihiko Okabe | Lighting fixture for compensating lack of sunshine in bare ground cultivation or greenhouse cultivation |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2457763Y (en) * | 2000-11-17 | 2001-10-31 | 赵俊祥 | Packaging structure of semiconductor laser |
| CN101867150A (en) * | 2010-06-13 | 2010-10-20 | 山东神戎电子股份有限公司 | Semiconductor laser for night vision illumination |
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Effective date of registration: 20151116 Address after: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101 Applicant after: Shandong Huaguang Photoelectronic Co., Ltd. Address before: 261061 Weifang high tech Zone, Jin Road, No. 9, No. Applicant before: Shandong Inspur Huaguang Optoelectronics Co., Ltd. |
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Address after: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101 Patentee after: SHANDONG HUAGUANG OPTOELECTRONICS CO., LTD. Address before: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101 Patentee before: Shandong Huaguang Photoelectronic Co., Ltd. |