CN2457763Y - Packaging structure of semiconductor laser - Google Patents
Packaging structure of semiconductor laser Download PDFInfo
- Publication number
- CN2457763Y CN2457763Y CN 00262073 CN00262073U CN2457763Y CN 2457763 Y CN2457763 Y CN 2457763Y CN 00262073 CN00262073 CN 00262073 CN 00262073 U CN00262073 U CN 00262073U CN 2457763 Y CN2457763 Y CN 2457763Y
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- expansion section
- pin
- conducting wire
- semiconductor laser
- positive wire
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Abstract
The utility model relates to an encapsulating structure for semiconductor lasers, which is provided with a metal positive conducting wire rack which is provided with a first pin which is combined with a base which is combined with a laser wafer. In the utility model, one side of the positive conducting wire rack is provided with a negative conducting wire rack of which the back end is provided with a second pin; an intended space is arranged between the negative conducting wire rack and the positive conducting wire rack; the negative conducting wire rack is connected with one end of a conducting wire of which the other end of the conducting wire is connected to the laser wafer; the positive conducting wire rack and the negative conducting wire rack are coated with a transparent outer hood on the outer side of one end being combined with the base, the laser wafer and the conducting wire. The utility model has the advantages simple structure and fabrication and can reduce defective products and cost.
Description
The utility model relates to a kind of laser, refers to a kind of encapsulating structure of the semiconductor laser that insulate with the lead frame separate mode especially.
In the encapsulating structure of traditional semiconductor laser, be the most common in the metallic packaging mode, as shown in Figure 7, exploded perspective schematic diagram for the semiconductor laser commonly used, it is gold-plated as base material 81 with the copper appearance, and binds the secondary platform made from silicide 82 in base material 81 front ends, binds metal base 83 in secondary platform 82 again, then be provided with laser wafer 84 on the metal base 83, encapsulated with crown cap 86 again with window 85.Because the cost of this kind semiconductor laser encapsulation is high, and in manufacture process, this base material 81 must make insulator 89 with glass fibre again with the junction of first, second pin 87,88, and glass fibre must be in the molten state that could produce more than 1800 ℃ Celsius, manufacture difficulty height, cost are difficult for reducing.
Problem for the semiconductor laser manufacturing cost of improving aforementioned conventional, someone has invented another kind of semiconductor laser packaged type as shown in Figure 8, it is the conducting strip 92 that is combined with on circuit board 91 as anodal, again on conducting strip 92 in conjunction with pedestal 93.Also be provided with laser wafer 94 on the pedestal 93, these pedestal 93 rear sides are provided with the cathode conductive film 95 of bottom insulation.Be connected with a lead 96 between this cathode conductive film 95 and the laser wafer 94, the bottom of cathode conductive film 95 is provided with insulating barrier 97, and circuit board 91 is passed with a cathode conductor 98 again in these cathode conductive film 95 rear ends, makes overall package more thereon.Though this kind semiconductor laser has reduced packaging cost, must be incorporated on the circuit board 91, and can't transport by monomer, must be in conjunction with circuit board 91 transportations.Yet the user mode of semiconductor kistributed-feedback laser is a lot, is not the characteristic that every kind of occasion all is fit to this kind circuit board 91, so for adapting to different user modes, circuit board 91 is often made different size, function.In addition, this planar package mode, its wafer and lead are exposed, are not protected, and make product use and transport proportion of goods damageds increase in the process.
Main purpose of the present utility model is; for solving the above problems the encapsulating structure that a kind of semiconductor laser is provided; by the outer cover of positive and negative electrode lead frame in conjunction with pedestal and laser wafer package resin or other plastics; the assembly of protection inside is not fragile, so can reduce the fraction defective and the cost of product.
Of the present utility model time a purpose is, for a kind of encapsulating structure of semiconductor laser is provided, by the preset space length between the positive and negative electrode lead frame, the two is separated, and reaches the effect of predetermined insulation, and can reduce manufacturing cost.
A purpose more of the present utility model is, a kind of encapsulating structure of semiconductor laser is provided, conduct to this first expansion portion and second expansion section by pedestal, lead and outer cover, this the first expansion portion and second expansion section promptly have the effect of preferable absorption heat than large tracts of land, after having absorbed heat, relend first pin and second pin conducts to the outside, make its radiating effect preferable, also can prolong its useful life.
Another purpose of the present utility model is, provides a kind of and need not be combined on the specific circuit board, applicable to any occasion, makes the standardization of product-quality indicators, but and the encapsulating structure of the semiconductor laser that transports of monomer.
The purpose of this utility model is realized by following technical scheme.
A kind of encapsulating structure of semiconductor laser, it is characterized in that, it has a metal positive-pole lead frame, this positive wire frame has one first pin, on this first pin in conjunction with a metal base, on this pedestal in conjunction with a laser wafer, one side of this positive wire frame has a cathode lead frame, the rear end of this cathode lead frame has one second pin, has a preset space length between cathode lead frame and the positive wire frame, an end that connects a lead on this cathode lead frame, the other end of this lead then is connected on this laser wafer, this laser wafer is connected with power supply respectively, and this positive wire frame combines with pedestal with cathode lead frame, and the outside of laser wafer and lead one end is coating a transparent outer cover.
The purpose of this utility model can also further realize by following technical measures.
The encapsulating structure of aforesaid semiconductor laser, wherein the laser wafer rear side of the first expansion section top base of this positive wire frame is provided with a photon analyzer to absorb the backlight of this laser wafer, and this photon analyzer adopts the positive wire frame to be connected with positive source; The negative pole of this photon analyzer then is one the 3rd a set pin of the rear side of the pedestal on this first expansion section, the opposite flank of the 3rd pin and first expansion section is provided with an insulating barrier made from glass fibre, is connected with one second lead between the 3rd pin and the photon analyzer.
The encapsulating structure of aforesaid semiconductor laser, wherein the front end of this first pin has first expansion section that extend to enlarge to the right, on this first expansion section in conjunction with a metal base.
The encapsulating structure of aforesaid semiconductor laser, wherein the front end of this second pin has one second expansion section, have preset space length between second expansion section of this cathode lead frame and first expansion section of positive wire frame, this second expansion section is connected with an end of this lead.
The utility model is by the outer cover of positive and negative electrode lead frame in conjunction with pedestal and laser wafer package resin or other plastics; the assembly of protection inside is not fragile; so can reduce the fraction defective and the cost of product, and can reach the effect of predetermined insulation, and increase the service life.
For further understanding technology contents of the present utility model, characteristics and effect, exemplify following preferred embodiment now, and conjunction with figs. is described in detail as follows:
Fig. 1 is the schematic perspective view of first embodiment of the present utility model.
Fig. 2 is the encapsulation action schematic diagram () of the utility model first embodiment.
Fig. 3 is the encapsulation action schematic diagram (two) of the utility model first embodiment.
Fig. 4 is the encapsulation action schematic diagram (three) of the utility model first embodiment.
Fig. 5 is the schematic perspective view of second embodiment of the present utility model.
Fig. 6 is a VI-VI cutaway view shown in Figure 5.
Fig. 7 is an exploded perspective schematic diagram of commonly using semiconductor laser.
Fig. 8 is the schematic perspective view of another kind of semiconductor laser.
See also Fig. 1 and Fig. 4, the utlity model has one with metal positive wire frame 1, this lead frame 1 has one first pin 11, the front end of this first pin 11 has one and extends first expansion section 12 (also being a platform of located by prior art) that enlarges to the right, on this first expansion section 12 in conjunction with one with metal pedestal 2, on this pedestal 2 in conjunction with a laser wafer 21.In addition, the right side of this positive wire frame 1 has a cathode lead frame 3, the rear end of this cathode lead frame 3 has one second pin 31, the front end of this second pin 31 then has one second expansion section 32, has a preset space length L between second expansion section 32 of this cathode lead frame 3 and first expansion section 12 of positive wire frame 1, an and end that connects a lead 33 on this second expansion section 32, the other end of this lead 33 then is connected on this laser wafer 21, make this laser wafer 21 can accept the electric power that the power supply (not shown) provides respectively, first expansion section 12 of this positive wire frame 1 is coating a transparent outer cover 4 with the outside of second expansion section 32 of cathode lead frame 3 in addition, and this outer cover 4 is to make with resin or other plastics.
At first, the utility model is in manufacture process, see also Fig. 2 to shown in Figure 4, most positive wire frame 1 and cathode lead frame 3 engage (that is with the punch press punching out time one-body molded) respectively at the side of separating of first expansion section 12 and second expansion section 32 with a junction 14, again on first expansion section 12 in conjunction with pedestal 2, laser wafer 21 is connected back (as shown in Figure 3) with lead 33, packaged type with similar LED, outer cover 4 is packaged in first expansion section 12 and 32 outsides, second expansion section (as shown in Figure 4), again with connecting portion 14 excisions, the semiconductor laser of so making promptly becomes a monomer at last.From the above, of the present utility model simple in structure, its manufacture process is also simple many than located by prior art, and this positive and negative electrode lead frame 1,3 can finish with outer cover 4 encapsulation simultaneously, is easy to the planning of production line.In addition,, can protect the utility model intraware and not fragile,, also can reduce cost so can reduce the fraction defective of product if when making outer cover 4 with resin or other plastics.
Secondly, with architectural characteristic, located by prior art all needs to insulate with glass fibre between the positive and negative electrode lead frame, so it makes not only trouble, and the cost height.Reviewing the utility model, is the preset space length L with therebetween between this positive and negative electrode lead frame 1,3, the two is separated, and reach predetermined insulation effect, so structure is comparatively simple, and also can reduce manufacturing cost.Moreover the utility model need not be combined on the specific circuit board, thus be applicable to any occasion, but and monomer transport.In addition, this laser wafer 21 is when luminous, can produce high temperature, and conduct to this first expansion portion 12 and second expansion section 32 by pedestal 2, lead 33 and outer cover 4, this the first expansion portion 12 and second expansion section 32 promptly have the effect of preferable absorption heat than large tracts of land, after having absorbed heat, relend first pin 11 and second pin 31 conducts to the outside, so can make its radiating effect preferable, also can prolong its useful life.
From the above, structure of the present utility model is not only simple, and manufacture is also simple than the person of commonly using, more can simplify the flow process of manufacturing, simultaneously more can reduce fraction defective, therefore manufacturing cost be can reduce greatly, more can radiating effect and useful life be increased by first expansion section 12 and second expansion section 32.
Certainly, still there are many examples in the utility model, therebetween the only variation on the details.See also Fig. 5 to shown in Figure 6, it is second embodiment of the present utility model, laser wafer 61 rear sides of first expansion section, 51 top bases 6 of this positive wire frame 5 are provided with a photon analyzer 62 to absorb the backlight of this laser wafer 61, this photon analyzer 62 has used positive wire frame 5 to connect the positive pole of power supply (not shown), the rear side that these photon analyzer 62 required negative poles then are the pedestals 6 on this first expansion section 51 is provided with one the 3rd pin 63, be connected with one second lead 64 between the 3rd pin 63 and the photon analyzer 62, and the opposite flank of the 3rd pin 63 and first expansion section 51 is provided with an insulating barrier 65 made from glass fibre.Because this first expansion section 51 still has enough spaces that the 3rd pin 63 can be set behind pedestal 6, like this, the photon analyzer 62 that the utility model was provided with, its scope of application can be more extensive.This photon analyzer 62 is the commercially available prod.
The above, it only is preferred embodiment of the present utility model, be not that the utility model is done any pro forma restriction, every foundation technical spirit of the present utility model all still belongs in the scope of technical solutions of the utility model any simple modification, equivalent variations and modification that above embodiment did.
Claims (4)
1, a kind of encapsulating structure of semiconductor laser, it is characterized in that, it has a metal positive-pole lead frame, this positive wire frame has one first pin, on this first pin in conjunction with a metal base, on this pedestal in conjunction with a laser wafer, one side of this positive wire frame has a cathode lead frame, the rear end of this cathode lead frame has one second pin, has a preset space length between cathode lead frame and the positive wire frame, an end that connects a lead on this cathode lead frame, the other end of this lead then is connected on this laser wafer, this laser wafer is connected with power supply respectively, and this positive wire frame combines with pedestal with cathode lead frame, and the outside of laser wafer and lead one end is coating a transparent outer cover.
2, the encapsulating structure of semiconductor laser according to claim 1, it is characterized in that, the laser wafer rear side of the first expansion section top base of described positive wire frame is provided with a photon analyzer to absorb the backlight of this laser wafer, and this photon analyzer adopts the positive wire frame to be connected with positive source; The negative pole of this photon analyzer then is one the 3rd a set pin of the rear side of the pedestal on this first expansion section, the opposite flank of the 3rd pin and first expansion section is provided with an insulating barrier made from glass fibre, is connected with one second lead between the 3rd pin and the photon analyzer.
3, the encapsulating structure of semiconductor laser according to claim 1 is characterized in that, the front end of described first pin has first expansion section that extend to enlarge to the right, on this first expansion section in conjunction with a metal base.
4, the encapsulating structure of semiconductor laser according to claim 1, it is characterized in that, the front end of described second pin has one second expansion section, have preset space length between second expansion section of this cathode lead frame and first expansion section of positive wire frame, this second expansion section is connected with an end of this lead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00262073 CN2457763Y (en) | 2000-11-17 | 2000-11-17 | Packaging structure of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00262073 CN2457763Y (en) | 2000-11-17 | 2000-11-17 | Packaging structure of semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2457763Y true CN2457763Y (en) | 2001-10-31 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00262073 Expired - Fee Related CN2457763Y (en) | 2000-11-17 | 2000-11-17 | Packaging structure of semiconductor laser |
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| Country | Link |
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| CN (1) | CN2457763Y (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100414792C (en) * | 2005-05-18 | 2008-08-27 | 夏普株式会社 | Semiconductor laser device and optical pickup apparatus having the device |
| WO2010078715A1 (en) * | 2009-01-09 | 2010-07-15 | 西安炬光科技有限公司 | High-power semiconductor laser and method for manufacturing the same |
| CN101471537B (en) * | 2007-12-20 | 2012-04-11 | 松下电器产业株式会社 | Semiconductor device, method of manufacturing the same, and production equipment of the same |
| CN102412500A (en) * | 2011-11-30 | 2012-04-11 | 江苏飞格光电有限公司 | Packaging method of semiconductor laser |
| CN103629596A (en) * | 2012-08-29 | 2014-03-12 | 山东浪潮华光光电子股份有限公司 | Laser device plant light and manufacturing method thereof |
| CN103633552A (en) * | 2012-08-29 | 2014-03-12 | 山东华光光电子有限公司 | Surface-mounted type laser packaging structure and packaging method of surface-mounted type laser in photoelectric circuit |
| CN103904553A (en) * | 2014-03-13 | 2014-07-02 | 丽水市银星轻工电子有限公司 | Surface mounting type laser |
| CN106990560A (en) * | 2017-05-25 | 2017-07-28 | 陕西科迪健康产业有限公司 | A kind of laser head |
| CN107329144A (en) * | 2017-08-16 | 2017-11-07 | 深圳市杰普特光电股份有限公司 | A kind of miniature laser range finder module and range unit |
| CN107508141A (en) * | 2017-08-16 | 2017-12-22 | 青岛海信宽带多媒体技术有限公司 | The laser and optical module of a kind of coaxial packaging |
| US10819084B2 (en) | 2017-06-02 | 2020-10-27 | Hisense Broadband Multimedia Technologies Co., Ltd. | TO-CAN packaged laser and optical module |
-
2000
- 2000-11-17 CN CN 00262073 patent/CN2457763Y/en not_active Expired - Fee Related
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100414792C (en) * | 2005-05-18 | 2008-08-27 | 夏普株式会社 | Semiconductor laser device and optical pickup apparatus having the device |
| CN101471537B (en) * | 2007-12-20 | 2012-04-11 | 松下电器产业株式会社 | Semiconductor device, method of manufacturing the same, and production equipment of the same |
| WO2010078715A1 (en) * | 2009-01-09 | 2010-07-15 | 西安炬光科技有限公司 | High-power semiconductor laser and method for manufacturing the same |
| US8638827B2 (en) | 2009-01-09 | 2014-01-28 | XI'AN Focuslight Technologies Co., Ltd | High-power semiconductor laser and method for manufacturing the same |
| CN102412500A (en) * | 2011-11-30 | 2012-04-11 | 江苏飞格光电有限公司 | Packaging method of semiconductor laser |
| CN103633552A (en) * | 2012-08-29 | 2014-03-12 | 山东华光光电子有限公司 | Surface-mounted type laser packaging structure and packaging method of surface-mounted type laser in photoelectric circuit |
| CN103629596A (en) * | 2012-08-29 | 2014-03-12 | 山东浪潮华光光电子股份有限公司 | Laser device plant light and manufacturing method thereof |
| CN103629596B (en) * | 2012-08-29 | 2016-05-18 | 山东华光光电子有限公司 | A kind of laser instrument plant lamp and preparation method thereof |
| CN103633552B (en) * | 2012-08-29 | 2016-08-03 | 山东华光光电子有限公司 | A kind of SMD individual laser package structure and the method for packing in photoelectric circuit thereof |
| CN103904553A (en) * | 2014-03-13 | 2014-07-02 | 丽水市银星轻工电子有限公司 | Surface mounting type laser |
| CN106990560A (en) * | 2017-05-25 | 2017-07-28 | 陕西科迪健康产业有限公司 | A kind of laser head |
| US10819084B2 (en) | 2017-06-02 | 2020-10-27 | Hisense Broadband Multimedia Technologies Co., Ltd. | TO-CAN packaged laser and optical module |
| CN107329144A (en) * | 2017-08-16 | 2017-11-07 | 深圳市杰普特光电股份有限公司 | A kind of miniature laser range finder module and range unit |
| CN107508141A (en) * | 2017-08-16 | 2017-12-22 | 青岛海信宽带多媒体技术有限公司 | The laser and optical module of a kind of coaxial packaging |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |