CN220627813U - Transparent conductive oxide film and crystalline silicon heterojunction solar cell - Google Patents
Transparent conductive oxide film and crystalline silicon heterojunction solar cell Download PDFInfo
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 43
- 239000010408 film Substances 0.000 claims description 111
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 7
- 238000013461 design Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 164
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
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- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
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- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
The utility model discloses a transparent conductive oxide film and a crystalline silicon heterojunction solar cell, wherein the transparent conductive oxide film comprises a first material layer and a second material layer which are alternately stacked, the top layer and the bottom layer of the transparent conductive oxide film are both the first material layer, and the transparent conductive oxide film comprises at least three layers of the first material layer. According to the transparent conductive oxide film and the crystalline silicon heterojunction solar cell provided by the utility model, through optical design, the transparent conductive oxide film with at least five layers is formed by adopting a reasonable mode that the first material layers and the second material layers are alternately laminated, so that the weather resistance of the transparent conductive oxide film is improved, and the cost is reduced.
Description
Technical Field
The utility model relates to the field of solar cells, in particular to a transparent conductive oxide film and a crystalline silicon heterojunction solar cell.
Background
In the solar cell industry, silicon solar cells are dominant in the solar cell industry with higher conversion efficiency and mature preparation process. The crystalline silicon heterojunction solar cell (HJT) is formed by depositing an amorphous silicon film on crystalline silicon, integrates the advantages of the crystalline silicon cell and the film cell, and has the advantages of simple structure, low process temperature, good passivation effect, high open-circuit voltage, good temperature characteristic, double-sided power generation and the like.
In HJT cells, since the amorphous silicon film has poor electrical conductivity, a Transparent Conductive Oxide (TCO) film is usually prepared on the surface of the amorphous silicon film to collect photo-generated carriers and transfer them to the metal electrode, and the light-facing surface film must have an anti-reflection function to reduce the light reflection loss on the surface of the cell, so that the TCO film must have good electrical conductivity and light transmittance. Meanwhile, since the solar cell needs to stably work for a long time in various complex environments, the TCO film needs to have excellent weather resistance and strict high temperature and high humidity test requirements. In order to obtain higher HJT cell efficiency, the TCO film must have both good optical performance and electrical performance, so as to improve the photoelectric conversion efficiency and reduce the production cost.
Disclosure of Invention
In the summary, a series of concepts in a simplified form are introduced, which will be further described in detail in the detailed description. The summary of the utility model is not intended to define the key features and essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The utility model provides a transparent conductive oxide film, which comprises a first material layer and a second material layer which are alternately laminated, wherein the top layer and the bottom layer of the transparent conductive oxide film are both the first material layer, and the transparent conductive oxide film comprises at least three first material layers.
Illustratively, the first material layer is an ITO layer or a doped ITO layer.
Illustratively, the second material layer comprises an AZO layer or a doped AZO layer.
Illustratively, the ratio of the total thickness of the first material layer to the total thickness of the transparent conductive oxide film ranges from 12% to 25%.
Illustratively, the transparent conductive oxide film includes a first layer to 2n+1-th layer disposed in order from bottom to top, where N is a natural number equal to or greater than 2; in the transparent conductive oxide film, except the first layer, the thickness of the first material layer is sequentially increased along the direction from bottom to top, and the thickness of the second material layer is sequentially reduced;
illustratively, the refractive index of the ITO layer comprises 1.9-2.1 and the refractive index of the AZO layer comprises 1.7-1.9.
Illustratively, the doped ITO layer comprises a hydrogen doped ITO layer or a hydrocarbon doped ITO layer, and the doped AZO layer comprises a hydrogen doped AZO layer.
The transparent conductive oxide film comprises a first layer, a third layer, a fifth layer and a seventh layer which are sequentially arranged from bottom to top, wherein the first layer, the third layer, the fifth layer and the seventh layer are ITO layers or doped ITO layers, and the second layer, the fourth layer and the sixth layer are AZO layers or doped AZO layers.
Illustratively, the first layer has a thickness ranging from 3nm to 6nm, the second layer has a thickness ranging from 50nm to 60nm, the third layer has a thickness ranging from 2nm to 5nm, the fourth layer has a thickness ranging from 30nm to 40nm, the fifth layer has a thickness ranging from 4nm to 8nm, the sixth layer has a thickness ranging from 15nm to 25nm, and the seventh layer has a thickness ranging from 10nm to 15nm.
The utility model also provides a crystalline silicon heterojunction solar cell which is characterized by comprising a crystalline silicon substrate, wherein an amorphous silicon film is formed on the crystalline silicon substrate, and the transparent conductive oxide film is formed on the amorphous silicon film.
According to the transparent conductive oxide film and the crystalline silicon heterojunction solar cell, through optical design, a reasonable mode that the first material layers and the second material layers are alternately laminated is adopted, so that the top layer and the bottom layer of the transparent conductive oxide film are both the first material layers, and the transparent conductive oxide film comprises at least three layers of the first material layers, so that the transparent conductive oxide film with at least five layers is formed, the weather resistance of the transparent conductive oxide film is improved, and the cost is reduced.
Drawings
The following drawings are included to provide an understanding of the utility model and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the utility model and their description to explain the principles of the utility model.
In the accompanying drawings:
fig. 1 is a schematic view of a transparent conductive oxide film according to an embodiment of the present utility model.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present utility model. It will be apparent, however, to one skilled in the art that the utility model may be practiced without one or more of these details. In other instances, well-known features have not been described in detail in order to avoid obscuring the utility model.
In order that the present utility model may be thoroughly understood, a detailed description will be given in the following description to illustrate the transparent conductive oxide thin film and the crystalline silicon heterojunction solar cell of the present utility model. It will be apparent that the utility model is not limited to the specific details of those skilled in the art of solar cells. Preferred embodiments of the present utility model are described in detail below, however, the present utility model may have other embodiments in addition to these detailed descriptions.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present utility model. As used herein, the singular is intended to include the plural unless the context clearly indicates otherwise. Furthermore, it will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Exemplary embodiments according to the present utility model will now be described in more detail with reference to the accompanying drawings. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. It should be appreciated that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of these exemplary embodiments to those skilled in the art. In the drawings, thicknesses of layers and regions are exaggerated for clarity, and the same reference numerals are used to denote the same elements, so that descriptions thereof will be omitted.
In practical production, a HJT battery is prepared by depositing an ITO (indium tin oxide) film on the surface of amorphous silicon. However, indium (In) In the ITO film belongs to noble metal and has toxicity, and is easy to cause pollution and high In price In the preparation process; the ITO film has good transmittance in the visible light region (400 nm to 780 nm), but has low transmittance in the near infrared region (780 nm to 1100 nm). AZO (aluminum-doped zinc oxide) film is low in cost and nontoxic, and the AZO film has excellent transmittance in a visible light region (400-780 nm) and a near infrared region (780-1100 nm), but has general electrical properties and poor weather resistance.
Several kinds of existing film layer structural designs: (1) The migration rate of AZO+ITO with a double-layer film structure is obviously reduced compared with that of pure ITO, and the weather resistance can not meet the requirement; (2) AZO+SiNx with a double-layer film structure has low mobility, and the SiNx film has poor conductivity, and expensive special conductive silver paste is required to penetrate through the SiNx film layer to collect electrons; (3) The three-layer film structure ITO+AZO+ITO has low mobility, the weather resistance can not meet the requirement, and the test in IEC 61215 test standard can not reach the standard.
In view of the above problems, the present utility model provides a Transparent Conductive Oxide (TCO) film including first material layers and second material layers alternately stacked, where a top layer and a bottom layer of the transparent conductive oxide film are both first material layers, and the transparent conductive oxide film includes at least three first material layers.
The bottom layer refers to the outermost layer of the TCO film in the direction close to the crystalline silicon substrate, and the top layer refers to the outermost layer of the TCO film in the direction far away from the crystalline silicon substrate.
Illustratively, an ITO film layer having a refractive index of 1.9-2.1 at 630nm is employed. In one embodiment, the first material layer is an ITO (indium tin oxide) layer or a doped ITO layer, such as a hydrogen doped ITO layer or a hydrocarbon doped ITO layer. In one embodiment, the ITO layer is formed using a plating method including, but not limited to, sputter plating, evaporation plating, multi-arc ion plating, RPD plating, and the like. In the ITO target material used In forming the ITO layer 2 O 3 And SnO 2 The mass ratio of (3) is 97:3, and can also be 95:5 or 90:10. when the ITO film layer is formed, the ratio of argon gas to oxygen gas is adjusted, the ITO target material is sputtered, a single-layer transparent film layer is deposited, and the film is deposited to a preset thickness. Measuring the transmittance of the wave band of 400nm to 1100nm by using an ultraviolet-visible near infrared spectrophotometer; the refractive index of the ITO film layer was calculated using optical software.
Illustratively, an AZO film layer having a refractive index of 1.7-1.9 at 630nm is employed. In one embodiment, the second material layer comprises an AZO (aluminum doped zinc oxide) layer or a doped AZO layer, such as a hydrogen doped AZO layer. In one embodiment, the AZO layer is formed using a plating method including, but not limited to, sputter plating, evaporation plating, multi-arc ion plating, RPD plating, and the like. When the AZO layer is formed, znO and Al in the AZO target material are adopted 2 O 3 The mass ratio of (2) to 98:2, or 97:3. and when the AZO film layer is formed, adjusting the gas proportion of argon and oxygen, sputtering an AZO target material, depositing a single-layer transparent film layer, and depositing to a preset thickness. Measuring the transmittance of the wave band of 400nm to 1100nm by using an ultraviolet-visible near infrared spectrophotometer; the refractive index of the AZO film layer was calculated using optical software. Needs to be as followsIt is noted that the second material layer may be other materials than AZO, which is not limited in this application.
In one embodiment, as shown in FIG. 1, the film structure and thickness of each layer are designed according to the transmittance and refractive index of the ITO layer and AZO layer, and the transmittance requirement of the 400 nm-1100 nm band. The TCO film comprises a first layer, a third layer, a fifth layer and a seventh layer which are sequentially arranged from bottom to top (namely from bottom to top), wherein the first layer, the third layer, the fifth layer and the seventh layer are ITO layers or doped ITO layers, and the second layer, the fourth layer and the sixth layer are AZO layers or doped ZAO layers. Compared with a single AZO film, the ITO film is inserted in the middle of the AZO film, so that the mobility of the whole film can be effectively improved, and the electric performance of the AZO film is close to that of a pure ITO film.
An AZO film with the refractive index of 1.7-1.9 and an ITO film with the refractive index of 1.9-2.1 are adopted to form an anti-reflection film with high refractive index and middle refractive index overlapped by film layers, so that the average transmittance of 400 nm-1100 nm reaches 92%, and the efficiency of the cell is improved by 0.2-0.3%. Wherein, AZO film with refractive index of 1.7-1.9 and ITO film with refractive index of 1.9-2.1 can be obtained by adjusting pressure, power, argon and oxygen ratio, etc. during film formation.
Illustratively, the ratio of the total thickness of the first material layer to the total thickness of the TCO film ranges from 12% to 25%.
In one embodiment, as shown in FIG. 1, the first layer has a thickness ranging from 3nm to 6nm, the second layer has a thickness ranging from 50nm to 60nm, the third layer has a thickness ranging from 2nm to 5nm, the fourth layer has a thickness ranging from 30nm to 40nm, the fifth layer has a thickness ranging from 4nm to 8nm, the sixth layer has a thickness ranging from 15nm to 25nm, and the seventh layer has a thickness ranging from 10nm to 15nm. The total thickness of the TCO film is 114 nm-1599 nm, the total thickness of the AZO layer is 95 nm-125 nm, the total thickness of the ITO layer is 19 nm-34 nm, and the ratio of the total thickness of the ITO layer to the total thickness of the TCO film is 12% -25%. Therefore, the ratio of the ITO film layer to the TCO film is 12-25%, the usage amount of the ITO film layer is reduced by 75-88%, and the cost can be effectively reduced. Wherein the ITO layer thickness of the first layer is set to 3nm-6nm, which serves as a transition layer between the monocrystalline silicon/amorphous silicon layer and the TCO layer, forming good contact.
Illustratively, the TCO film includes a first layer to 2n+1-th layer disposed in order from bottom to top, where N is a natural number of 2 or more; in the transparent conductive oxide film, except for the first layer, the thickness of the first material layer is sequentially increased along the direction from bottom to top, and the thickness of the second material layer is sequentially reduced. The bottom-up direction is the direction from the bottom layer to the top layer.
In the above embodiment, the third layer, the fifth layer and the seventh layer are all ITO layers, and the thicknesses thereof increase from bottom to top. As AZO weather resistance is poor, ITO weather resistance is good, the weather resistance of the ITO film can be effectively utilized, the thickness of the ITO film is larger as the ITO film is closer to the outer side (close to the atmosphere), the weather resistance of the whole TCO film can be improved, the influence of the air environment on the inside of the battery piece is prevented, and the IEC 61215 test standard is passed.
Further, the second layer, the fourth layer and the sixth layer are all AZO layers, and the thicknesses of the AZO layers are sequentially reduced from bottom to top. The design can control the total TCO film thickness in a reasonable range, and can lead the whole TCO film to have better performance.
According to the transparent conductive oxide film provided by the utility model, through an optical design, a reasonable mode of alternately laminating the first material layers and the second material layers is adopted, so that the top layer and the bottom layer of the transparent conductive oxide film are both the first material layers, and the transparent conductive oxide film comprises at least three layers of the first material layers, so that the transparent conductive oxide film with at least five layers is formed, the weather resistance of the transparent conductive oxide film is improved, and the cost is reduced.
The utility model also provides a crystalline silicon heterojunction solar cell, which comprises a crystalline silicon substrate, wherein an amorphous silicon film is formed on the crystalline silicon substrate, and the transparent conductive oxide film is formed on the amorphous silicon film.
Referring to fig. 1, the method for forming the crystalline silicon heterojunction solar cell comprises the following steps:
first, a crystalline silicon substrate 100 is provided and pre-processed. In one embodiment, the crystalline silicon substrate is preferably an N-type monocrystalline silicon wafer. The pretreatment comprises a silicon wafer cleaning step and a silicon wafer texturing step: and cleaning the N-type monocrystalline silicon wafer which needs to be manufactured into the battery piece, and then manufacturing the clean N-type monocrystalline silicon wafer into the suede with the shape of an inverted pyramid.
Next, an amorphous silicon thin film 110 is formed on the crystalline silicon substrate 100. The amorphous silicon thin film may be formed using any prior art technique known to those skilled in the art, including, but not limited to, plasma Enhanced Chemical Vapor Deposition (PECVD), and the like. In one embodiment, a P-side intrinsic silicon layer, an N-side phosphorus doped silicon, and a P-side boron doped silicon are sequentially formed on the textured silicon wafer using Plasma Enhanced Chemical Vapor Deposition (PECVD).
Next, a TCO film 120 is formed on the amorphous silicon film. In one embodiment, the monocrystalline silicon wafer after the amorphous silicon film is formed is placed into a magnetron sputtering coating device (PVD), the temperature is set to 140-200 ℃, coating is started, and the working pressure of coating is 0.1-0.5 Pa. Firstly, forming an ITO layer, specifically, the sputtering target is an ITO target, and In the ITO target 2 O 3 And SnO 2 The mass ratio of the ITO target material is 97:3, the power of the ITO target material is 2 KW-3 KW, the gas is high-purity argon and high-purity oxygen mixed gas, the total gas pressure is 0.15 Pa-0.5 Pa, the high-purity oxygen partial pressure ratio is 2% -5%, and the film is deposited to the set thickness of 3nm-6 nm. Next, an AZO layer is formed, specifically, the sputtering target is an AZO target in which ZnO and Al 2 O 3 The mass ratio of (2) is 98:2, AZO target power is 2 KW-5 KW, gas is introduced into the AZO target, the gas is two mixed gases of high-purity argon and high-purity oxygen, the total gas pressure is 0.15 Pa-0.5 Pa, the high-purity oxygen partial pressure accounts for 1% -5%, and the film is deposited to the set thickness of 50 nm-60 nm. The above steps of forming the ITO layer and AZO layer are repeated, and each layer of the optical software simulation design is deposited to further form a third layer, a fourth layer, a fifth layer, or even more layers of the TCO film.
The TCO film is formed and then comprises the steps of annealing, screen printing and light injection in sequence. In one embodiment, the single crystal silicon wafer after forming the TCO film is put into an annealing furnace for annealing at 150-200 ℃ for 20-60 min. And then, placing the annealed monocrystalline silicon piece into screen printing equipment, printing silver paste or silver-coated copper paste, and solidifying after printing. And then, carrying out light injection on the silicon wafer subjected to screen printing by using equipment.
The solar cell can be widely applied to the application fields of various photovoltaic power stations and solar automobiles.
The present utility model has been illustrated by the above-described embodiments, but it should be understood that the above-described embodiments are for purposes of illustration and description only and are not intended to limit the utility model to the embodiments described. In addition, it will be understood by those skilled in the art that the present utility model is not limited to the embodiments described above, and that many variations and modifications are possible in light of the teachings of the utility model, which variations and modifications are within the scope of the utility model as claimed. The scope of the utility model is defined by the appended claims and equivalents thereof.
Claims (10)
1. The transparent conductive oxide film is characterized by comprising first material layers and second material layers which are alternately stacked, wherein the top layer and the bottom layer of the transparent conductive oxide film are both the first material layers, and the transparent conductive oxide film comprises at least three layers of the first material layers.
2. The transparent conductive oxide film according to claim 1, wherein the first material layer is an ITO layer or a doped ITO layer.
3. The transparent conductive oxide film according to claim 2, wherein the second material layer comprises an AZO layer or a doped AZO layer.
4. The transparent conductive oxide film according to claim 2, wherein a ratio of a total thickness of the first material layer to a total thickness of the transparent conductive oxide film ranges from 12% to 25%.
5. The transparent conductive oxide film according to claim 3, wherein the transparent conductive oxide film comprises a first layer to 2n+1 th layer which are sequentially arranged from bottom to top, wherein N is a natural number of 2 or more; in the transparent conductive oxide film, except for the first layer, the thickness of the first material layer is sequentially increased along the direction from bottom to top, and the thickness of the second material layer is sequentially reduced.
6. The transparent conductive oxide film according to claim 3, wherein the refractive index of the ITO layer is 1.9 to 2.1, and the refractive index of AZO is 1.7 to 1.9.
7. The transparent conductive oxide film of claim 3, wherein the doped ITO layer comprises a hydrogen doped ITO layer or a hydrocarbon doped ITO layer, and the doped AZO layer comprises a hydrogen doped AZO layer.
8. The transparent conductive oxide film according to claim 3, comprising a first layer to a seventh layer sequentially provided from bottom to top, wherein the first layer, the third layer, the fifth layer and the seventh layer are ITO layers or doped ITO layers, and the second layer, the fourth layer and the sixth layer are AZO layers or doped AZO layers.
9. The transparent conductive oxide film according to claim 8, wherein the first layer has a thickness ranging from 3nm to 6nm, the second layer has a thickness ranging from 50nm to 60nm, the third layer has a thickness ranging from 2nm to 5nm, the fourth layer has a thickness ranging from 30nm to 40nm, the fifth layer has a thickness ranging from 4nm to 8nm, the sixth layer has a thickness ranging from 15nm to 25nm, and the seventh layer has a thickness ranging from 10nm to 15nm.
10. A crystalline silicon heterojunction solar cell characterized by comprising a crystalline silicon substrate on which an amorphous silicon thin film is formed, the amorphous silicon thin film having the transparent conductive oxide thin film as claimed in any one of claims 1 to 9 formed thereon.
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