CN220402262U - Full vacuum Cheng Yizhi junction trans-perovskite laminated solar cell - Google Patents
Full vacuum Cheng Yizhi junction trans-perovskite laminated solar cell Download PDFInfo
- Publication number
- CN220402262U CN220402262U CN202321503440.XU CN202321503440U CN220402262U CN 220402262 U CN220402262 U CN 220402262U CN 202321503440 U CN202321503440 U CN 202321503440U CN 220402262 U CN220402262 U CN 220402262U
- Authority
- CN
- China
- Prior art keywords
- layer
- perovskite
- transparent conductive
- trans
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 230000005540 biological transmission Effects 0.000 claims abstract description 15
- 230000001681 protective effect Effects 0.000 claims abstract description 15
- 238000010521 absorption reaction Methods 0.000 claims abstract description 11
- 230000005525 hole transport Effects 0.000 claims abstract description 9
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 claims description 3
- 239000006096 absorbing agent Substances 0.000 claims 1
- 230000031700 light absorption Effects 0.000 abstract description 14
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000005611 electricity Effects 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 65
- 239000000463 material Substances 0.000 description 24
- 238000005086 pumping Methods 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 9
- 238000002207 thermal evaporation Methods 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 7
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 6
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 6
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 6
- 229910001195 gallium oxide Inorganic materials 0.000 description 6
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 6
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 6
- 238000002294 plasma sputter deposition Methods 0.000 description 6
- XUUUSPGMWMECQJ-UHFFFAOYSA-N [In+3].[O-2].[Hf+4] Chemical compound [In+3].[O-2].[Hf+4] XUUUSPGMWMECQJ-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 5
- HJZPJSFRSAHQNT-UHFFFAOYSA-N indium(3+) oxygen(2-) zirconium(4+) Chemical compound [O-2].[Zr+4].[In+3] HJZPJSFRSAHQNT-UHFFFAOYSA-N 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- -1 Ge2+ Chemical class 0.000 description 3
- 229910003363 ZnMgO Inorganic materials 0.000 description 3
- PBAJOOJQFFMVGM-UHFFFAOYSA-N [Cu]=O.[Sr] Chemical compound [Cu]=O.[Sr] PBAJOOJQFFMVGM-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- UNRNJMFGIMDYKL-UHFFFAOYSA-N aluminum copper oxygen(2-) Chemical compound [O-2].[Al+3].[Cu+2] UNRNJMFGIMDYKL-UHFFFAOYSA-N 0.000 description 3
- LDSIKPHVUGHOOI-UHFFFAOYSA-N copper;oxonickel Chemical compound [Ni].[Cu]=O LDSIKPHVUGHOOI-UHFFFAOYSA-N 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- BXNFVPMHMPQBRO-UHFFFAOYSA-N magnesium nickel(2+) oxygen(2-) Chemical compound [O--].[O--].[Mg++].[Ni++] BXNFVPMHMPQBRO-UHFFFAOYSA-N 0.000 description 3
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 3
- 229910000480 nickel oxide Inorganic materials 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 3
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- WGCXSIWGFOQDEG-UHFFFAOYSA-N [Zn].[Sn].[In] Chemical compound [Zn].[Sn].[In] WGCXSIWGFOQDEG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005323 electroforming Methods 0.000 description 2
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000005922 Phosphane Substances 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001450 anions Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002892 organic cations Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910000064 phosphane Inorganic materials 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The application relates to a full vacuum Cheng Yizhi junction trans-perovskite laminated solar cell, which comprises a front metal wire layer, a front amorphous structure transparent conductive protective film layer, a transparent conductive window layer, an electron transport layer II, an electron transport layer I, a perovskite absorption layer, a hole transport layer, a heterojunction HJT cell multilayer film structure layer and a back metal wire layer which are sequentially arranged from top to bottom. The utility model adopts the design of laminating two light absorption layers of the double electron transmission layer and the heterojunction trans-perovskite, can improve the efficiency and the service life of the laminated battery, and can absorb light to generate electricity when double-glass packaging is carried out, thereby improving the conversion efficiency; the efficiency is greatly improved, so that the overall production cost is reduced, and the reliability is improved, so that the service life is prolonged, and the popularization of the market and the popularization of products are facilitated.
Description
Technical Field
The application relates to the technical field of solar cells, in particular to a Cheng Yizhi junction trans perovskite laminated solar cell manufactured in full vacuum.
Background
In recent years, as the capacity of silicon wafers, cells and modules continues to expand, photovoltaic power generation costs have also substantially decreased. Therefore, reducing the proportion of integrated BOS in the overall photovoltaic power generation system cost structure becomes more important, which means that efficient components will play the most important role in reducing the system cost, as they can save more BOS cost with the same amount of power provided. In all solar cell technologies, research on the silicon-based heterojunction HJT solar cell has important significance, and the silicon-based heterojunction HJT solar cell has the advantages of high conversion efficiency up to 25.5%, simple structure, low processing temperature below 250 ℃, few process steps, low temperature coefficient and the like.
Perovskite materials are a class of perovskite materials having a perovskite structure 3 The material of the same crystal structure, gustrav Rose was found in 1839 and later named by Russian mineralogist L.A. Perovski. Perovskite materials of the general structural formula ABX 3 Wherein A and B are two cations and X is an anion. This peculiar crystal structure gives it many unique physicochemical properties such as optical rotation absorption, electrocatalysis, etc., and has little application in the chemical and physical fields, where A is an organic cation, typically aliphatic or aromatic ammonium, B is a divalent metal cation, e.g. Ge2+, sn2+, pb2+ …, etc., and X is a halogen anion, e.g. Cl-, br-, I-. In 2009, tsutomu Miyasaka was first selected as an organic-inorganic hybrid perovskite material CH 3 NH 3 PbI 3 And CH (CH) 3 NH 3 PbBr 3 The dye in the traditional DSSCs is replaced to be used as a novel photosensitizing agent to prepare the first perovskite solar cell in the true sense, and the conversion efficiency laboratory developing the solar cell in the last ten years can reach more than 23 percent, so that the cost is low.
Currently HJT heterojunction cells can be produced in mass with a conversion efficiency of more than 25%, which is the main stream direction of high-efficiency photovoltaic cells in the future, but how to produce the heterojunction cells in mass with a conversion efficiency of more than 26% is the subject of the current efforts in the industry. However, perovskite batteries have the disadvantages of poor stability and low weather resistance despite rapid efficiency improvement in recent years, and mainly perovskite materials are susceptible to temperature, moisture and oxygen, so that the market of mainstream silicon-based photovoltaic batteries cannot be independently challenged.
Disclosure of Invention
The utility model aims to provide a Cheng Yizhi junction trans-perovskite laminated solar cell which can realize light absorption and power generation on both sides during double-glass packaging, has higher stability, can effectively improve the conversion efficiency, prolongs the service life of the cell, reduces the cost and helps market popularization.
The technical scheme adopted by the utility model is as follows: a full-vacuum Cheng Yizhi junction trans-perovskite laminated solar cell comprises a front metal wire layer, a front amorphous structure transparent conductive protective film layer, a transparent conductive window layer, an electron transmission layer II, an electron transmission layer I, a perovskite absorption layer, a hole transmission layer, a heterojunction HJT cell multilayer film structure layer and a back metal wire layer which are sequentially arranged from top to bottom.
Further, the front metal wire layer or the back metal wire layer is a screen printing silver metal circuit, a silver-coated copper circuit or an electroforming copper circuit, the thickness is 5-25 um, the width is 15-100 um, and the resistivity is less than 6 multiplied by 10 -6 Ωcm。
Further, the front amorphous transparent conductive protective film layer is an amorphous transparent conductive film layer prepared by adopting linear airflow plasma to sputter indium zinc oxide IZO material or indium tin zinc oxide IZTO material, and the thickness is 50-200 nm, and the resistivity is less than 7 multiplied by 10 -4 Ωcm。
Further, the transparent conductive window layer is made of materials such as indium tin oxide ITO, zinc aluminum oxide AZO, zinc aluminum gallium oxide GAZO, indium hafnium oxide IHO, indium zirconium oxide IZrO, indium tungsten oxide IWO or indium titanium oxide ITiO by linear airflow plasma sputtering, and has a thickness of 50-200 nm and a resistivity of less than 5×10 -4 Ωcm。
Further, the electron transport layer II is a film layer prepared by adopting linear airflow plasma to sputter materials such as zinc magnesium oxide ZnMgO, zinc tin oxide ZTO, titanium oxide TiO2, aluminum oxide Al2O3 or tin oxide SnO 2; the electron transport layer I is a C60 film layer prepared by using a linear thermal evaporation mode; the hole transport layer is a film layer prepared from materials such as nickel oxide NiO, nickel magnesium oxide NiMgO, nickel copper oxide NiCuO, copper aluminum oxide CuAlO or strontium copper oxide SrCuO by vacuum magnetron sputtering; the thickness of the electron transport layer II, the electron transport layer I or the hole transport layer is 15-100 nm.
Further, the perovskite absorption layer is prepared by using a linear thermal evaporation mode, and the thickness of the perovskite absorption layer is 100-1000 nm.
Further, the heterojunction HJT battery multilayer film structure layer comprises a front transparent conductive layer, a front N-type microcrystalline silicon film, a front intrinsic amorphous silicon film layer, an N-type monocrystalline silicon wafer substrate, a back intrinsic amorphous silicon film layer, a back P-type microcrystalline silicon film and a back transparent conductive layer which are sequentially arranged from top to bottom.
Further, the thickness of the N-type monocrystalline silicon wafer substrate is 50-180 um.
Further, the front-side n-type microcrystalline silicon film, the front-side intrinsic amorphous silicon film, the back-side intrinsic amorphous silicon film or the back-side P-type microcrystalline silicon film are all manufactured by adopting PECVD equipment, and the thickness of the front-side n-type microcrystalline silicon film, the front-side intrinsic amorphous silicon film, the back-side intrinsic amorphous silicon film or the back-side P-type microcrystalline silicon film is 5-25 nm.
Further, the front transparent conductive layer and the back transparent conductive layer are transparent conductive layers prepared by treating indium tin oxide ITO, zinc aluminum oxide AZO, zinc aluminum gallium oxide GAZO, indium hafnium oxide IHO, indium zirconium oxide IZO, indium zinc oxide IZO, indium tin zinc oxide IZTO, indium tungsten oxide IWO, indium titanium oxide ITiO, or the like by vacuum magnetron sputtering or ion reactive deposition RPD; the thickness of the front transparent conductive layer or the back transparent conductive layer is 50-200 nm, the refractive index is 1.9-2.1, the visible light transmittance is more than 82%, and the resistivity is less than 5 multiplied by 10 -4 Ωcm。
The utility model has the beneficial effects that:
(1) The perovskite light absorption layer and the electron transport layer I are manufactured in a thermal evaporation mode, and the method has the advantages of being free of limitation of the size of the texture of the heterojunction bottom battery, high in uniformity and high in crystallinity; the perovskite light absorption layer with high crystallinity and high homogeneity can delay the cracking of the perovskite material, and is beneficial to prolonging the service life of the battery;
(2) The electron transmission layer II, the transparent conductive window layer and the transparent conductive protective film layer with the front amorphous structure are manufactured by adopting linear airflow plasma to sputter LGPS, and have the advantages of room temperature film formation, large-area film coating, high stability and small damage to the front film coating of the perovskite light absorption layer;
(3) By adopting the design of stacking the double electron transmission layers and the heterojunction trans-perovskite two light absorption layers, the efficiency and the service life of the stacked battery can be improved, and the double sides can absorb light to generate electricity during double-glass packaging, so that the conversion efficiency is improved; the efficiency is greatly improved, so that the overall production cost is reduced, and the service life is prolonged due to the improvement of the reliability, thereby being beneficial to the popularization of markets and the popularization of products; the conversion efficiency of the utility model is not lower than 28%, and the service life is not less than 25 years.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an embodiment of the present utility model;
fig. 2 is a schematic structural diagram of a multi-layer film structure of a heterojunction HJT cell in accordance with an embodiment of the present utility model.
Reference numerals explain: 1-front metal wire layer, 2-front amorphous structure transparent conductive protective film layer, 3-transparent conductive window layer, 4-electron transport layer II, 5-electron transport layer I, 6-perovskite absorption layer, 7-hole transport layer, 8-heterojunction HJT battery multilayer film structure layer, 9-back metal wire layer, 801-front transparent conductive layer, 802-front N-type microcrystalline silicon film, 803-front intrinsic amorphous silicon film layer, 804-N-type monocrystalline silicon wafer substrate, 805-back intrinsic amorphous silicon film layer, 806-back P-type microcrystalline silicon film layer, 807-back transparent conductive layer.
Detailed Description
In order that the above-recited objects, features and advantages of the present utility model will be more clearly understood, a more particular description of the utility model will be rendered by reference to the appended drawings and appended detailed description. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present utility model, however, the present utility model may be practiced in other ways than those described herein, and therefore the present utility model is not limited to the specific embodiments disclosed below.
Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and the like in the description and in the claims, are not used for any order, quantity, or importance, but are used for distinguishing between different elements. Likewise, the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate a relative positional relationship, which changes accordingly when the absolute position of the object to be described changes.
As shown in fig. 1 to 2, a full vacuum Cheng Yizhi junction trans-perovskite laminated solar cell comprises a front metal wire layer 1, a front amorphous transparent conductive protective film layer 2, a transparent conductive window layer 3, an electron transport layer II 4, an electron transport layer I5, a perovskite absorption layer 6, a hole transport layer 7, a heterojunction HJT cell multilayer film structure layer 8 and a back metal wire layer 9 which are sequentially arranged from top to bottom.
The front metal wire layer 1 or the back metal wire layer 9 is a screen printing silver metal circuit, a silver copper-clad circuit or a screen printing silver copper-clad circuitIs an electroformed copper circuit with a thickness of 5-25 um, a width of 15-100 um, and a resistivity of less than 6 x 10 -6 Omega cm. In the preferred embodiment of the utility model, when the front metal wire layer 1 and the back metal wire layer 9 are manufactured, low-temperature silver paste or silver coated copper paste is used as a material, a screen printer is used for respectively screen printing silver metal lines on the front amorphous structure transparent conductive protective film layer 2 and the back of the heterojunction HJT battery multilayer film structure layer 8, and then drying treatment is carried out at 180-200 ℃, so that the manufacture of the front metal wire layer 1 and the back metal wire layer 9 is completed; or electroforming copper is used to manufacture copper metal circuit. The thickness of the front metal wire layer 1 and the back metal wire layer 9 is 10-15 um, the width is 30-50 um, and the resistivity is less than 5.8X10 -6 Ωcm。
The front amorphous transparent conductive protective film layer 2 is an amorphous transparent conductive film layer prepared by adopting linear airflow plasma to sputter Indium Zinc Oxide (IZO) material or indium tin zinc oxide (IZTO) material, and has a thickness of 50-200 nm and a resistivity of less than 7×10 -4 Omega cm. In the preferred embodiment of the utility model, when the transparent conductive protective film layer 2 with the front amorphous structure is manufactured, linear airflow plasma sputtering is adopted, and the cavity background pressure is pumped to 0.7X10 by a vacuum pumping system -5 ～0.9×10 -5 After torr, argon is used as working gas, and is introduced through a throttle valve, and the working pressure of the sputtering cavity is controlled to be 2 multiplied by 10 -3 the torr uses high-purity indium zinc IZO or indium tin zinc IZTO with the purity of 99.95 percent as a target material, and a layer of indium zinc IZO or indium tin zinc IZTO with the thickness of 80-110 nm is sputtered on the transparent conductive window layer 3, thereby completing the manufacture of the transparent conductive protective film layer 2 with the front amorphous structure, and the resistivity of the transparent conductive protective film layer 2 with the front amorphous structure is less than 6.7x10 -4 Ωcm。
The transparent conductive window layer 3 is a transparent conductive window layer 3 prepared by adopting linear airflow plasma to sputter materials such as indium tin oxide ITO, zinc aluminum oxide AZO, zinc aluminum gallium oxide GAZO, indium hafnium oxide IHO, indium zirconium oxide IZrO, indium tungsten oxide IWO or indium titanium oxide ITiO, and the like, and the thickness is 50-200 nm, and the resistivity is less than 5 multiplied by 10 -4 Omega cm. In the present practiceIn the novel preferred embodiment, when the transparent conductive window layer 3 is manufactured, linear airflow plasma sputtering is adopted, and the cavity background pressure is pumped to 0.7X10 by a vacuum pumping system -5 ～0.9×10 -5 After torr, argon is used as working gas, and is introduced through a throttle valve, and the working pressure of the sputtering cavity is controlled to be 2 multiplied by 10 -3 the torr uses indium tin oxide ITO, zinc aluminum oxide AZO, zinc aluminum gallium oxide GAZO, indium tungsten oxide IWO, indium hafnium oxide IHO, indium zirconium oxide IZrO, indium zinc oxide IZO, indium tin zinc oxide IZTO or indium titanium oxide ITiO as target material, the purity of the target material is 99.95%, and on the electron transfer layer II 4, a thin film layer with the thickness of 80-110 nm is formed by depositing the target material, thereby completing the manufacture of the transparent conductive window layer 3, and the resistivity of the manufactured transparent conductive window layer 3 is less than 4.8x10 -4 Ωcm。
The electron transport layer II 4 is a film layer prepared by adopting linear airflow plasma to sputter zinc magnesium oxide ZnMgO, zinc tin oxide ZTO, titanium oxide TiO2, aluminum oxide Al2O3, tin oxide SnO2 and other materials; the electron transport layer I5 is a C60 film layer prepared by using a linear thermal evaporation mode; the hole transport layer 7 is a film layer made of materials such as vacuum magnetron sputtering nickel oxide NiO, nickel magnesium oxide NiMgO nickel copper oxide NiCuO, copper aluminum oxide CuAlO or strontium copper oxide SrCuO; the thickness of the electron transport layer II 4, the electron transport layer I5 or the hole transport layer 7 is 15-100 nm.
In the preferred embodiment of the utility model, the electron transport layer II 4 is produced by linear gas flow plasma sputtering, and the background pressure of the sputtering cavity is pumped to 0.7X10 by a vacuum pumping system -5 ～0.9×10 -5 After torr, argon is used as working gas, and is introduced through a throttle valve, and the working pressure of the sputtering cavity is controlled to be 3 multiplied by 10 -3 the torr is formed into a thin film layer with the thickness of 15-40 nm on the electron transport layer I5 by sputtering by using materials such as zinc magnesium oxide ZnMgO, zinc tin oxide ZTO, titanium oxide TiO2, aluminum oxide Al2O3 or tin oxide SnO2, and the like, thereby completing the manufacture of the electron transport layer II 4.
In the fabrication of the electron transport layer I5, the C60 material was placed in a metal crucible of a linear thermal evaporation apparatus,the vacuum pumping system is used for pumping the background pressure of the sputtering cavity to 0.7X10 -5 ～0.9×10- 5 After torr, the linear metal crucible is heated to about 300 ℃ to enable the material to be thermally evaporated and attached on the perovskite light absorption layer, so that the preparation of the electron transport layer I5 is completed, and the thickness of the prepared electron transport layer I5 is 15-40 nm.
The perovskite absorption layer 6 is prepared by using a linear thermal evaporation mode, and the thickness of the perovskite absorption layer 6 is 100-1000 nm. In a preferred embodiment of the utility model, the perovskite absorption layer 6 is produced by placing the perovskite material in a metal crucible of a linear thermal evaporation device and pumping the background pressure of the sputtering cavity to 0.7X10 by a vacuum pumping system -5 ～0.9×10 -5 After torr, the linear metal crucible is heated to about 250 ℃ to enable the material to be thermally evaporated and attached on the hole transmission layer 7, so that the preparation of the perovskite light absorption layer is completed, and the thickness of the prepared perovskite light absorption layer is 250-400 nm.
When the hole transport layer 7 is manufactured, the vacuum pumping system is used for pumping the background pressure of the vacuum magnetron sputtering cavity to 0.7X10 -5 ～0.9×10 -5 After torr, nickel oxide NiO), nickel magnesium oxide NiMgO, nickel copper oxide NiCuO, copper aluminum oxide CuAlO or strontium copper oxide SrCuO and the like are used as targets, and a thin film with the thickness of 15-40 nm is formed on the heterojunction HJT battery multilayer film structure layer 8 by sputtering the targets, so that the hole transport layer 7 is manufactured.
The heterojunction HJT cell multilayer film structure layer 8 comprises a front transparent conductive layer 801, a front N-type microcrystalline silicon film 802, a front intrinsic amorphous silicon film 803, an N-type monocrystalline silicon substrate 804, a back intrinsic amorphous silicon film 805, a back P-type microcrystalline silicon film 806 and a back transparent conductive layer 807 which are sequentially arranged from top to bottom.
In the embodiment of the present utility model, the thickness of the N-type monocrystalline silicon wafer substrate 804 is 50-180 um, preferably 100-120 um. The N-type monocrystalline silicon wafer substrate 804 of the heterojunction HJT cell multilayer film structure layer 8 needs to be pretreated before film plating, including cleaning, static electricity removal, texturing and the like. The front-side N-type microcrystalline silicon film 802, the front-side intrinsic amorphous silicon film 803, the back-side intrinsic amorphous silicon film 805 or the back-side P-type microcrystalline silicon film 806 are all manufactured by adopting a PECVD device, gases such as silane SiH4, phosphane PH3, mixed gas of trimethylborane TMB and methane CH3, mixed gas of hydrogen H2 and argon Ar and the like are respectively introduced into the PECVD device, film coating is sequentially completed on the substrate of the N-type monocrystalline silicon wafer 804, the substrate temperature is 150-500 ℃, and the thickness of the manufactured front-side N-type microcrystalline silicon film 802, front-side intrinsic amorphous silicon film 803, back-side intrinsic amorphous silicon film 805 or back-side P-type microcrystalline silicon film 806 is 5-25 nm, preferably 7-20 nm.
The front transparent conductive layer 801 and the back transparent conductive layer 807 are transparent conductive layers prepared by treating indium tin oxide ITO, zinc aluminum oxide AZO, zinc aluminum gallium oxide GAZO, indium hafnium oxide IHO, indium zirconium oxide IZO, indium zinc oxide IZO, indium tin zinc oxide IZTO, indium tungsten oxide IWO, indium titanium oxide ITiO, or the like by vacuum magnetron plating or ion reactive deposition RPD; the front transparent conductive layer 801 or the back transparent conductive layer 807 has a thickness of 50-200 nm, a refractive index of 1.9-2.1, a visible light transmittance of 82% or more, and a resistivity of less than 5×10 -4 Ωcm。
In the preferred embodiment of the present utility model, the front transparent conductive layer 801 and the back transparent conductive layer 807 are fabricated by pumping the sputtering chamber background pressure to 0.7X10 using a vacuum pumping system -5 ～0.9×10 -5 After torr, argon is used as working gas, and is introduced through a throttle valve, and the working pressure of the sputtering cavity is controlled to be 3 multiplied by 10 -3 the torr uses high-purity Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), indium tin zinc oxide (IZTO) or indium titanium oxide (ItiO) targets with purity of 99.95%, and a thin film layer with thickness of 80-100 nm is sputtered on the front n-type microcrystalline silicon film 802 and the back P-type microcrystalline silicon film by a pulse direct current power supply, so that the front transparent conductive layer 801 and the back transparent conductive layer 807 are plated. Or high-purity indium tin oxide ITO, zinc aluminum oxide AZO, zinc aluminum gallium oxide GAZO, indium zinc oxide IZO, indium tin zinc oxide IZTO or indium tungsten oxide IWO with purity of 99.95%, and vacuum-pumping to 0.5X10 by using RPD equipment -5 ～0.7×10 -5 After torr, directly evaporating the bulk material on the back surface of the P-type microcrystalline silicon filmA thin film layer having a thickness of 80 to 100nm is formed on the upper surface of the layer, thereby completing plating of the front transparent conductive layer 801 and the back transparent conductive layer 807. The resistivity of the front transparent conductive layer 801 and the back transparent conductive layer 807 is less than 4.8X10 -4 Ωcm。
The Cheng Yizhi junction trans-perovskite laminated solar cell prepared by the method can be prepared. The perovskite light absorption layer and the electron transmission layer I5 are manufactured in a thermal evaporation mode, and the electron transmission layer II 4, the transparent conductive window layer 3 and the transparent conductive protective film layer 2 with the front amorphous structure are manufactured by adopting linear airflow plasma sputtering LGPS. The linear thermal evaporation has the advantages that the size of the texture of the heterojunction bottom battery is not limited, and the perovskite light absorption film layer and the electron transmission layer I5 with high uniformity and crystallinity can be obtained. The electronic transmission layer II 4, the transparent conductive window layer 3 and the transparent conductive protective film layer 2 with the front amorphous structure are manufactured by adopting linear airflow plasma sputtering, and the method has the advantages of room-temperature film formation, large-area film plating, high stability and small damage to the front film plating of the perovskite light absorption layer, and the perovskite light absorption layer with high crystallinity and high homogeneity can delay the cracking of the perovskite material, thereby being beneficial to prolonging the service life of the battery. The double electron transmission layer and heterojunction trans-perovskite two light absorption layer lamination design is adopted, so that the efficiency and the service life of the laminated battery can be improved. The conversion efficiency of the embodiment of the utility model is not lower than 28%, and the service life is not less than 25 years. The double sides can absorb light and generate electricity when being packaged by double glass, the whole production cost is reduced due to the great improvement of efficiency, and the service life is prolonged due to the improvement of reliability, thereby being beneficial to the popularization of market and products.
The above description is only of the preferred embodiments of the present utility model and is not intended to limit the present utility model, but various modifications and variations can be made to the present utility model by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.
Claims (9)
1. The Cheng Yizhi junction trans-perovskite laminated solar cell is characterized by comprising a front metal wire layer (1), a front amorphous structure transparent conductive protective film layer (2), a transparent conductive window layer (3), an electron transmission layer II (4), an electron transmission layer I (5), a perovskite absorption layer (6), a hole transmission layer (7), a heterojunction HJT cell multilayer film structure layer (8) and a back metal wire layer (9) which are sequentially arranged from top to bottom;
the heterojunction HJT battery multilayer film structure layer (8) comprises a front transparent conductive layer (801), a front N-type microcrystalline silicon film (802), a front intrinsic amorphous silicon film layer (803), an N-type monocrystalline silicon wafer substrate (804), a back intrinsic amorphous silicon film layer (805), a back P-type microcrystalline silicon film (806) and a back transparent conductive layer (807) which are sequentially arranged from top to bottom.
2. The full vacuum Cheng Yizhi junction trans-perovskite stacked solar cell as claimed in claim 1, wherein the front metal wire layer (1) or the back metal wire layer (9) has a thickness of 5-25 um, a width of 15-100 um, and a resistivity of less than 6X10 -6 Ωcm。
3. The Cheng Yizhi junction trans-perovskite stacked solar cell of claim 1, wherein the transparent conductive protective film layer (2) of front amorphous structure has a thickness of 50-200 nm and a resistivity of less than 7×10 -4 Ωcm。
4. The Cheng Yizhi junction trans-perovskite stacked solar cell of claim 1, wherein the transparent conductive window layer (3) has a thickness of 50-200 nm and a resistivity of less than 5 x 10 -4 Ωcm。
5. The Cheng Yizhi junction trans-perovskite stacked solar cell of claim 1, wherein the electron transport layer II (4), the electron transport layer I (5) or the hole transport layer (7) has a thickness of 15-100 nm.
6. The Cheng Yizhi junction trans-perovskite stacked solar cell of claim 1, wherein the thickness of the perovskite absorber layer (6) is 100-1000 nm.
7. The Cheng Yizhi junction trans-perovskite stacked solar cell of claim 1, wherein the N-type monocrystalline silicon wafer substrate (804) has a thickness of 50-180 μm.
8. The full vacuum Cheng Yizhi junction trans-perovskite stacked solar cell according to claim 1, wherein the front-side n-type microcrystalline silicon film (802), the front-side intrinsic amorphous silicon film layer (803), the back-side intrinsic amorphous silicon film layer (805), or the back-side P-type microcrystalline silicon film layer (806) has a thickness of 5 to 25nm.
9. The Cheng Yizhi junction trans-perovskite stacked solar cell as claimed in claim 1, wherein the front transparent conductive layer (801) or the back transparent conductive layer (807) has a thickness of 50-200 nm, a refractive index of 1.9-2.1, a visible light transmittance of 82% or more, and a resistivity of less than 5×10 -4 Ωcm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321503440.XU CN220402262U (en) | 2023-06-14 | 2023-06-14 | Full vacuum Cheng Yizhi junction trans-perovskite laminated solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321503440.XU CN220402262U (en) | 2023-06-14 | 2023-06-14 | Full vacuum Cheng Yizhi junction trans-perovskite laminated solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220402262U true CN220402262U (en) | 2024-01-26 |
Family
ID=89607382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321503440.XU Active CN220402262U (en) | 2023-06-14 | 2023-06-14 | Full vacuum Cheng Yizhi junction trans-perovskite laminated solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220402262U (en) |
-
2023
- 2023-06-14 CN CN202321503440.XU patent/CN220402262U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Li et al. | Wide bandgap interface layer induced stabilized perovskite/silicon tandem solar cells with stability over ten thousand hours | |
| CN205863192U (en) | A kind of silicon based hetero-junction solaode using double TCO film layer | |
| CN111554764A (en) | Efficient and stable perovskite/silicon two-end laminated solar cell | |
| CN106340570A (en) | Film plating device for preparing TCO (Transparent Conductive Oxide) film and film plating method | |
| CN110416328A (en) | A kind of HJT battery and preparation method thereof | |
| WO2023115870A1 (en) | Pn heterojunction antimony selenide/perovskite solar cell, and preparation method therefor | |
| CN208986026U (en) | A kind of double TCO hetero-junctions perovskite lamination photovoltaic cells | |
| CN209963073U (en) | Novel high-efficiency double-sided incident light CdTe perovskite laminated photovoltaic cell | |
| CN108735828A (en) | A kind of hetero-junctions back contact solar cell and preparation method thereof | |
| CN217280794U (en) | Photovoltaic cell | |
| CN208655672U (en) | Heterojunction solar battery | |
| CN108172640A (en) | A kind of cadmium telluride diaphragm solar battery of generating electricity on two sides and preparation method thereof | |
| CN107217232A (en) | A kind of method for improving zinc oxide transparent conductive film chemical stability | |
| CN207441751U (en) | A kind of homojunction perovskite thin film solar cell | |
| CN207009459U (en) | The silicon based hetero-junction solar cell that a kind of tow sides can generate electricity | |
| CN208753334U (en) | A kind of silicon based hetero-junction solar battery using vapor deposition zinc oxide transparent conducting film | |
| CN220402262U (en) | Full vacuum Cheng Yizhi junction trans-perovskite laminated solar cell | |
| TW201010115A (en) | Method for depositing an amorphous silicon film for photovoltaic devices with reduced light-induced degradation for improved stabilized performance | |
| CN116322072A (en) | Preparation method of semitransparent perovskite solar cell | |
| US20240162364A1 (en) | Transparent conductive oxide film and heterojunction solar cell | |
| CN103203912B (en) | A kind of new A ZO coated glass and preparation technology thereof | |
| CN109065648A (en) | A kind of solar battery and preparation method thereof | |
| CN112216747B (en) | Heterojunction solar cell and preparation method and application thereof | |
| CN210156405U (en) | Heterojunction cell structure with hydrogen annealed TCO conductive film | |
| CN208521944U (en) | A kind of hetero-junctions back contact solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |