CN220306246U - High-speed switch diode chip and packaging structure - Google Patents
High-speed switch diode chip and packaging structure Download PDFInfo
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- CN220306246U CN220306246U CN202321031863.6U CN202321031863U CN220306246U CN 220306246 U CN220306246 U CN 220306246U CN 202321031863 U CN202321031863 U CN 202321031863U CN 220306246 U CN220306246 U CN 220306246U
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- diode chip
- heat conducting
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- heat
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 239000004519 grease Substances 0.000 claims description 11
- 229920001296 polysiloxane Polymers 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 230000017525 heat dissipation Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Abstract
The utility model provides a high-speed switch diode chip and a packaging structure, comprising: a base; the side plates are respectively and fixedly arranged at two ends of the top of the base, and the top of each side plate is fixedly provided with a heat conducting fin; the radiating fins are fixedly arranged at the top of the heat conducting fin, and a plurality of radiating fins are arranged on the top of the heat conducting fin; preferably, a crystal is fixedly arranged at the top of the base, and a chip is fixedly arranged at the top of the crystal; preferably, the chip is arranged at the bottom of the heat conducting sheet, and a plurality of pins are fixedly arranged on two sides of the top of the chip; preferably, the bottom of the heat conducting fin is fixedly provided with a second heat conducting fin. According to the high-speed switch diode chip and the packaging structure, the structures such as the side plates, the heat conducting fins and the radiating fins are matched with each other, and when the high-speed switch diode chip is used, the radiating fins are arranged on the top of the chip, so that the size of the radiating fins can be increased, and the radiating effect is improved.
Description
Technical Field
The utility model relates to the technical field of diode chips, in particular to a high-speed switch diode chip and a packaging structure.
Background
The reverse recovery time of the high-speed switching diode is shorter than that of a common switching diode, and the switching frequency is faster; the common domestic high-speed switching diode has 2CK series; the imported high-speed switch diode comprises a 1N series, a 1S series, a 1SS series (leaded plastic package) and an RLS series (surface mounting); the high-speed switching diode-characteristic PN junction diode uses minority carriers, so that the forward voltage can be reduced due to the conductive modulation effect, but the reverse recovery characteristic of minority carriers can prevent high-speed switching.
Like the patent application of publication number CN 218160349U among the prior art, it can dispel the heat with the heat conduction on the heat conducting strip of returning to the heat dissipation inslot, has improved semiconductor chip radiating efficiency like this effectively, and the heat that produces when having avoided the semiconductor chip to move gathers in peripheral encapsulation plastics, has solved the comparatively compact problem that leads to inconvenient heat dissipation of current diode chip structure, has avoided the ageing of circuit to appear in the semiconductor chip, has ensured this semiconductor diode chip life service life and later stage product stability of using.
However, the heat sink of the chip is disposed on the inner side surface of the housing with a small side surface structure, and thus reduces the heat dissipation efficiency when heat dissipation is performed.
Therefore, it is necessary to provide a high-speed switching diode chip and a packaging structure for solving the above technical problems.
Disclosure of Invention
The utility model provides a high-speed switch diode chip and a packaging structure, which solve the problems that the heat dissipation structure is small and is sunken in the shell, and the heat dissipation efficiency is reduced.
In order to solve the above technical problems, the present utility model provides a high-speed switching diode chip and a packaging structure, including:
a base;
the side plates are respectively and fixedly arranged at two ends of the top of the base, and the top of each side plate is fixedly provided with a heat conducting fin;
the cooling fin, cooling fin fixed mounting in the top of heat conducting fin, the cooling fin is provided with a plurality of.
Preferably, a crystal is fixedly installed at the top of the base, and a chip is fixedly installed at the top of the crystal.
Preferably, the chip is arranged at the bottom of the heat conducting fin, and a plurality of pins are fixedly arranged at two sides of the top of the chip.
Preferably, the bottom of the heat conducting fin is fixedly provided with a second heat conducting fin, and the bottom of the second heat conducting fin is provided with a silicone grease layer.
Preferably, the silicone grease layer is disposed on top of the chip.
In order to solve the technical problems, the utility model also provides a packaging structure, which comprises a shell and any one of the high-speed switch diode chips, wherein the shell is fixedly arranged at the bottom of the base, the top of the inner side surface of the shell is fixedly provided with a baffle, two ends of two sides of the inner side surface of the baffle are respectively provided with a clamping interface, the top of the baffle is provided with a cover plate, two ends of two sides of the bottom of the cover plate are respectively fixedly provided with an elastic sheet, and the bottom of one side of the elastic sheet is fixedly provided with a clamping block.
Preferably, the heat sink is disposed in the cover plate, the pins are disposed in the two sides of the housing, the elastic piece is disposed on the inner side surface of the clip interface, and the clip block is disposed at the bottom of the baffle.
Compared with the related art, the high-speed switch diode chip and the packaging structure provided by the utility model have the following beneficial effects:
the utility model provides a high-speed switch diode chip and a packaging structure, which are mutually matched through structures such as a side plate, a heat conducting fin, a radiating fin and the like, and when the high-speed switch diode chip is used, the radiating fin is arranged at the top of the chip, so that the size of the radiating fin can be increased, and the radiating effect is improved.
Drawings
Fig. 1 is a schematic structural diagram of a first embodiment of a high-speed switching diode chip according to the present utility model;
FIG. 2 is a schematic view of the side internal structure shown in FIG. 1;
fig. 3 is a schematic structural diagram of a second embodiment of a high-speed switching diode chip according to the present utility model;
FIG. 4 is a schematic diagram of a package structure according to the present utility model;
fig. 5 is a schematic side view of the cover plate shown in fig. 4.
Reference numerals in the drawings: 1. the heat-conducting chip comprises a base, 11, a crystal, 12, a chip, 13, pins, 2, a side plate, 21, a heat-conducting sheet, 22, a heat-radiating sheet, 3, a second heat-conducting sheet, 31, a silicone grease layer, 4, a shell, 41, a baffle, 42, a clamping interface, 43, a cover plate, 44, an elastic sheet, 45 and a clamping block.
Detailed Description
The utility model will be further described with reference to the drawings and embodiments.
First embodiment
Referring to fig. 1 and fig. 2 in combination, fig. 1 is a schematic structural diagram of a first embodiment of a high-speed switching diode chip according to the present utility model; fig. 2 is a schematic diagram of the side internal structure shown in fig. 1. A high speed switching diode chip comprising: a base 1;
the side plates 2 are fixedly arranged at two ends of the top of the base 1 respectively, and the heat conducting fins 21 are fixedly arranged at the top of the side plates 2;
the side plates 2 have the effect of supporting and transferring heat when in use.
When the chip 12 is normally used, heat is conducted to the heat conductive sheet 21, and then transferred to the heat sink 22 through the heat conductive sheet 21 for heat dissipation.
And the radiating fins 22 are fixedly arranged on the top of the heat conducting fin 21, and a plurality of radiating fins 2 are arranged.
The heat sink 22 is disposed on top of the chip 12, thereby increasing the area for heat dissipation.
The top of the base 1 is fixedly provided with a crystal 11, and the top of the crystal 11 is fixedly provided with a chip 12.
The chip 12 is disposed at the bottom of the heat conducting sheet 21, and a plurality of pins 13 are fixedly mounted on two sides of the top of the chip 12.
The working principle of the high-speed switch diode chip provided by the utility model is as follows:
when in use, the two side plates 2 are respectively arranged at two ends of the top of the base 1, then a user installs the heat conducting fin 21 on the top of the side plate 2 to be positioned on the top of the chip 12, and when in use, the heat generated by the chip 12 during operation is transferred to the upper surface of the heat conducting fin 21, and then the heat is dissipated through the heat dissipating fin 22.
Compared with the related art, the high-speed switching diode chip provided by the utility model has the following beneficial effects:
by mutually matching the structures of the side plate 2, the heat conducting fin 21, the heat radiating fin 22 and the like, the heat radiating fin 22 is arranged at the top of the chip 12 when the heat radiating device is used, the size of the heat radiating fin 22 can be increased, and therefore the heat radiating effect is improved.
Second embodiment
Referring to fig. 3 in combination, another high-speed switching diode chip is proposed in a second embodiment of the present application based on the first embodiment of the present application. The second embodiment is merely a preferred manner of the first embodiment, and implementation of the second embodiment does not affect the implementation of the first embodiment alone.
Specifically, the second embodiment of the present application provides a high-speed switching diode chip, which is different in that a second heat conducting fin 3 is fixedly mounted at the bottom of the heat conducting fin 21, and a silicone grease layer 31 is disposed at the bottom of the second heat conducting fin 3.
The silicone grease layer 31 is provided on top of the chip 12.
The working principle of the high-speed switch diode chip provided by the utility model is as follows:
when in use, the silicone grease layer 31 is uniformly coated on the bottom of the second heat conduction sheet 3, and then the bottom of the side plate 2 is arranged on the top of the base 1, so that the silicone grease layer 31 is pressed on the top of the chip 12, thereby playing a role in heat dissipation.
Compared with the related art, the high-speed switching diode chip provided by the utility model has the following beneficial effects:
the silicone grease layer 31 is directly contacted with the chip 12, then the second heat conducting fin 3 is contacted with the silicone grease layer 31, the top of the second heat conducting fin 3 is contacted with the heat conducting fin 21, the heat transfer effect is improved, and the heat dissipation speed is increased.
Referring to fig. 4 and 5, the present utility model further provides a packaging structure, which is characterized by comprising a housing 4 and any one of the high-speed switch diode chips, wherein the housing 4 is fixedly mounted at the bottom of the base 1, a baffle 41 is fixedly mounted at the top of the inner side surface of the housing 4, two ends of two sides of the inner side surface of the baffle 41 are respectively provided with a clamping interface 42, a cover plate 43 is disposed at the top of the baffle 42, two ends of two sides of the bottom of the cover plate 43 are respectively fixedly mounted with an elastic sheet 44, and a clamping block 45 is fixedly mounted at the bottom of one side of the elastic sheet 44.
The heat sink 22 is disposed inside the cover 43, the pins 13 are disposed inside the two sides of the housing 4, the elastic pieces 44 are disposed on the inner side surfaces of the card interfaces 42, and the card blocks 45 are disposed on the bottom of the baffle 41.
When in use, a user installs the base 1 carrying the chip 12 on the inner side surface of the shell 4, then the user moves the cover plate 43 to the top of the shell 4 to be positioned on the top of the baffle 41, then clamps four elastic sheets 44 on the inner side surface of the clamping interface 42 respectively, then presses the cover plate 43 downwards until the clamping block 45 moves to the bottom of the baffle 41, thereby fixedly installing the cover plate 43 and packaging the chip 12
The foregoing description is only illustrative of the present utility model and is not intended to limit the scope of the utility model, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present utility model.
Claims (7)
1. A high speed switching diode chip, comprising:
a base;
the side plates are respectively and fixedly arranged at two ends of the top of the base, and the top of each side plate is fixedly provided with a heat conducting fin;
the cooling fin, cooling fin fixed mounting in the top of heat conducting fin, the cooling fin is provided with a plurality of.
2. The high-speed switching diode chip of claim 1, wherein a crystal is fixedly mounted on top of the submount, and wherein a chip is fixedly mounted on top of the crystal.
3. The high-speed switching diode chip as claimed in claim 2, wherein the chip is disposed at the bottom of the heat conductive sheet, and a plurality of pins are fixedly mounted on both sides of the top of the chip.
4. A high-speed switching diode chip as claimed in claim 3, characterized in that the bottom of the heat conducting strip is fixedly provided with a second heat conducting strip, the bottom of which is provided with a silicone grease layer.
5. The high-speed switching diode chip of claim 4, wherein said silicone grease layer is disposed on top of said chip.
6. The packaging structure is characterized by comprising a shell and the high-speed switch diode chip according to any one of claims 1-5, wherein the shell is fixedly arranged at the bottom of the base, a baffle is fixedly arranged at the top of the inner side surface of the shell, clamping interfaces are respectively arranged at two ends of two sides of the inner side surface of the baffle, a cover plate is arranged at the top of the baffle, elastic pieces are fixedly arranged at two ends of two sides of the bottom of the cover plate, and clamping blocks are fixedly arranged at the bottom of one side of each elastic piece.
7. The package structure according to claim 6, wherein the heat sink is disposed in the cover plate, the pins are disposed in the two sides of the housing, the elastic piece is disposed on the inner side of the clip interface, and the clip block is disposed on the bottom of the baffle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321031863.6U CN220306246U (en) | 2023-05-04 | 2023-05-04 | High-speed switch diode chip and packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321031863.6U CN220306246U (en) | 2023-05-04 | 2023-05-04 | High-speed switch diode chip and packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220306246U true CN220306246U (en) | 2024-01-05 |
Family
ID=89373699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321031863.6U Active CN220306246U (en) | 2023-05-04 | 2023-05-04 | High-speed switch diode chip and packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220306246U (en) |
-
2023
- 2023-05-04 CN CN202321031863.6U patent/CN220306246U/en active Active
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