CN220132409U - Silicon carbide growing device - Google Patents
Silicon carbide growing device Download PDFInfo
- Publication number
- CN220132409U CN220132409U CN202321003946.4U CN202321003946U CN220132409U CN 220132409 U CN220132409 U CN 220132409U CN 202321003946 U CN202321003946 U CN 202321003946U CN 220132409 U CN220132409 U CN 220132409U
- Authority
- CN
- China
- Prior art keywords
- crucible
- carbide
- silicon
- graphite crucible
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 57
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 56
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 98
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 85
- 239000010439 graphite Substances 0.000 claims abstract description 85
- 239000013078 crystal Substances 0.000 claims abstract description 50
- 239000006184 cosolvent Substances 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 14
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 5
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 claims description 4
- 229910003470 tongbaite Inorganic materials 0.000 claims description 4
- TWHBEKGYWPPYQL-UHFFFAOYSA-N aluminium carbide Chemical compound [C-4].[C-4].[C-4].[Al+3].[Al+3].[Al+3].[Al+3] TWHBEKGYWPPYQL-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 239000000155 melt Substances 0.000 abstract description 6
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 39
- 238000000034 method Methods 0.000 description 8
- 238000009413 insulation Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- DYRBFMPPJATHRF-UHFFFAOYSA-N chromium silicon Chemical compound [Si].[Cr] DYRBFMPPJATHRF-UHFFFAOYSA-N 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- XWHPIFXRKKHEKR-UHFFFAOYSA-N iron silicon Chemical compound [Si].[Fe] XWHPIFXRKKHEKR-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides a silicon carbide growing device, which relates to a silicon carbide growing technology, and comprises a graphite crucible, a heating coil and a carbide crucible lining, wherein a silicon cosolvent is contained in the graphite crucible, the heating coil is arranged around the graphite crucible and is used for heating the graphite crucible and enabling the silicon cosolvent to be in a melt state, the carbide crucible lining is arranged on the inner wall of the graphite crucible and is used for being in contact with the silicon cosolvent, the carbide crucible lining contains metal carbide, the silicon cosolvent is used for reacting with carbon in the metal carbide to generate silicon carbide, crystallization growth is carried out under the convection effect, and the carbide crucible lining gradually reacts with the silicon melt from inside to outside along with the continuous growth, so that relay is formed, and stable source component supply is provided for the crystal growth. Compared with the prior art, the silicon carbide growth device provided by the utility model can realize stable growth of silicon carbide crystals and ensure the crystal quality.
Description
Technical Field
The utility model relates to the technical field of silicon carbide growth, in particular to a silicon carbide growth device.
Background
When the conventional liquid phase method silicon carbide crystal grows, the graphite crucible is used as a container and a carbon source, the silicon alloy is used as a cosolvent (silicon-chromium, silicon-iron, silicon-aluminum and the like), and the main component of the graphite crucible is carbon, so that the graphite crucible is eroded quickly in the crystal growth process, the liquid level is lowered along with the continuous erosion of melt received by the graphite crucible, and the crystal is pulled by a superposition process, so that the situation of stability damage of a growth interface is very easy to occur.
In addition, as the crystal growth is continuously carried out, silicon in the cosolvent is continuously consumed, the components, temperature and viscosity of the cosolvent system are continuously changed, great control difficulty is brought to stable growth, stable growth is difficult to realize, and the crystal quality is influenced.
Disclosure of Invention
The utility model aims to provide a silicon carbide growing device which can realize stable growth of silicon carbide crystals and ensure the quality of the crystals.
Embodiments of the present utility model are implemented as follows:
in a first aspect, the present utility model provides a silicon carbide growth apparatus comprising:
a graphite crucible containing a silicon co-solvent therein;
a heating coil disposed around the graphite crucible for heating the graphite crucible;
a carbide crucible liner disposed on an inner wall of the graphite crucible and configured to contact the silicon co-solvent;
the carbide crucible lining comprises metal carbide, and the silicon cosolvent is used for reacting with carbon in the metal carbide to generate silicon carbide.
In an alternative embodiment, the carbide crucible liner includes a side liner layer that overlies the inner sidewall of the graphite crucible, and at least a portion of the side liner layer is for contact with the silicon co-solvent.
In an alternative embodiment, the carbide crucible liner further comprises a base liner layer overlying the bottom wall of the graphite crucible.
In an alternative embodiment, the side lining layer extends to the bottom wall of the graphite crucible and is integrally connected with the base lining layer, and the side lining layer and the base lining layer are all an aluminum carbide layer, a chromium carbide layer or a titanium carbide layer.
In an alternative embodiment, the carbide crucible liner has a thickness of 1-2 times the thickness of the graphite crucible.
In an alternative embodiment, the graphite crucible has a thickness of 10mm to 15mm.
In an alternative embodiment, the silicon carbide growing device further comprises a seed support shaft and a seed wafer, wherein the seed support shaft extends into the graphite crucible, the seed wafer is arranged at one end of the seed support shaft extending into the graphite crucible, and the carbide crucible lining is at least arranged around the seed wafer and is arranged at intervals with the seed wafer.
In an alternative embodiment, the graphite crucible comprises a crucible body and a crucible cover, the carbide crucible lining is arranged on the inner wall of the crucible body, the crucible cover is arranged on the crucible body, and a shaft hole for the seed crystal support shaft to penetrate is formed in the crucible cover.
In an alternative embodiment, the silicon carbide growing device further comprises a heat insulating layer, and the heat insulating layer is coated on the outer side of the graphite crucible.
In an alternative embodiment, the heating coil is cylindrical and surrounds the periphery of the graphite crucible, and the graphite crucible is located between the top end face and the bottom end face of the heating coil.
The beneficial effects of the embodiment of the utility model include:
the embodiment of the utility model provides a silicon carbide growing device, wherein a carbide crucible lining is arranged on the inner side surface of a graphite crucible, the carbide crucible lining contains metal carbide, a silicon cosolvent is also contained in the graphite crucible, the carbide crucible lining is contacted with the silicon cosolvent, the silicon cosolvent can react with carbon in the metal carbide to generate silicon carbide, crystal growth is carried out under the convection effect, and the carbide crucible lining gradually reacts with a silicon melt from inside to outside along with the continuous growth, so that relay is formed, and stable source component supply is provided for the crystal growth. The components, temperature, viscosity and other parameters of the cosolvent are not changed greatly, so that the difficulty of stable growth control is lower. Compared with the prior art, the silicon carbide growth device provided by the utility model can realize stable growth of silicon carbide crystals and ensure the crystal quality.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present utility model and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a silicon carbide growth apparatus according to an embodiment of the present utility model;
fig. 2 is a schematic structural view of the graphite crucible of fig. 1.
Icon:
a 100-silicon carbide growth device; 110-graphite crucible; 111-a crucible body; 113-a crucible cover; 130-heating coils; a 150-carbide crucible liner; 151-side lining layer; 153-substrate liner; 170-seed crystal support shaft; 171-seed wafer; 190-an insulating layer; 200-silicon co-solvent.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments of the present utility model. The components of the embodiments of the present utility model generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the utility model, as presented in the figures, is not intended to limit the scope of the utility model, as claimed, but is merely representative of selected embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present utility model, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or are directions or positional relationships conventionally put in use of the inventive product, are merely for convenience of describing the present utility model and simplifying the description, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present utility model. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal," "vertical," and the like do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present utility model, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.
As disclosed in the background art, when a liquid phase is utilized to grow silicon carbide crystals in the prior art, a graphite crucible is generally adopted as a growth container, and simultaneously the graphite crucible can be used as a carbon source, and a cosolvent of an aluminum alloy material, such as silicon-chromium, silicon-iron, silicon-aluminum and the like, is added into the graphite crucible, so that the graphite crucible is continuously eroded by a melt in the crystal growth process, and the liquid level is lowered due to the fact that the graphite crucible is single and loose in material, the erosion speed is higher, and the crystal is easily separated from the liquid level due to the lifting operation of the liquid phase overlapping method, so that the stability of a growth interface is damaged.
In addition, as the crystal growth continues, silicon in the cosolvent is continuously consumed, and other substances remain in the cosolvent, so that parameters such as components, temperature, viscosity and the like of the cosolvent system are continuously changed, and great control difficulty is brought to stable growth.
Further, there have been reports in the prior art that crystal growth is performed using silicon carbide crucible as a container and silicon as a cosolvent. However, the silicon carbide crucible is complicated in preparation process, the purity of the silicon carbide crucible is difficult to ensure in the preparation process, the silicon carbide crucible is difficult to manufacture, and the cost is high, so that the crystal growth cost is high.
In order to solve the above problems, the present utility model provides a novel silicon carbide growth apparatus, which will be described in detail below.
First embodiment
Referring to fig. 1 and 2, the present embodiment provides a silicon carbide growing apparatus 100, which can realize stable growth of silicon carbide crystals and ensure crystal quality.
The silicon carbide growing device 100 provided in this embodiment includes a graphite crucible 110, a heating coil 130 and a carbide crucible liner 150, wherein a silicon cosolvent 200 is contained in the graphite crucible 110, the heating coil 130 is disposed around the graphite crucible 110 and is used for heating the graphite crucible 110 and making the silicon cosolvent 200 in a melt state, the carbide crucible liner 150 is disposed on an inner wall of the graphite crucible 110 and is used for contacting with the silicon cosolvent 200, the carbide crucible liner 150 contains metal carbide, and the silicon cosolvent 200 is used for reacting with carbon in the metal carbide to generate silicon carbide.
In this embodiment, the silicon cosolvent 200 is a pure silicon material, and under the heating action of the heating coil 130, the pure silicon material can be melted inside the graphite crucible 110 to form a melt, the carbide crucible lining 150 is in direct contact with the silicon cosolvent 200 in the melt state, and metal carbide is present in the carbide crucible lining 150, the silicon cosolvent 200 can react with carbon in the metal carbide to generate silicon carbide, and crystal growth is performed under the convection action, and as the growth proceeds, the carbide crucible lining 150 gradually reacts with the silicon melt from inside to outside to form relay, so that stable source component supply is provided for crystal growth. The components, temperature, viscosity and other parameters of the cosolvent are not changed greatly, so that the difficulty of stable growth control is lower.
In this embodiment, the carbide crucible lining 150 may be a metal carbide ceramic crucible, which may include aluminum carbide (Al 4 C 3 ) Chromium carbide (Cr) 3 C 2 ) And titanium carbide (TiC) and other materials, carbon in the metal carbide on the surface layer of the crucible lining can react with silicon in the cosolvent to generate silicon carbide, and the silicon carbide is crystallized and grown at the lower end of the rain seed crystal under the convection effect. And as growth continues, carbide in the crucible lining gradually reacts with the silicon melt from inside to outside to form relay. Due to the adoption of the carbide crucible lining 150, the metal carbide is eroded slowly, so that the liquid level is not easy to fluctuate greatly, and the unstable growth interface is avoided.
In this embodiment, the carbide crucible liner 150 includes a side lining layer 151, the side lining layer 151 covers the inner sidewall of the graphite crucible 110, and at least a portion of the side lining layer 151 is used to contact the silicon co-solvent 200. Specifically, the shape of the side lining layer 151 is adapted to the shape of the inner sidewall of the graphite crucible 110 and completely covers the inner sidewall surface of the graphite crucible 110, so that it can be in contact with the carbide crucible lining 150 regardless of the level of the cosolvent, thereby achieving stable carbide crystal growth.
Further, the carbide crucible liner 150 further includes a base liner 153, the base liner 153 covering the bottom wall of the graphite crucible 110. Specifically, the substrate liner 153 completely covers the bottom wall of the graphite crucible 110, thereby making the carbon supply relatively uniform everywhere, and providing more carbon source. In addition, the silicon co-solvent 200 is enabled to directly contact the substrate liner 153 due to the presence of the substrate liner 153, thereby better generating silicon carbide.
In this embodiment, the side lining layer 151 extends to the bottom wall of the graphite crucible 110 and is integrally connected with the base lining layer 153, and the side lining layer 151 and the base lining layer 153 are all an aluminum carbide layer, a chromium carbide layer or a titanium carbide layer. Specifically, the side lining layer 151 and the base lining layer 153 can be formed on the side wall and the bottom wall of the graphite crucible 110 in a sputtering manner, so that the thickness is uniform, the surface of the graphite crucible 110 can be completely covered, and the graphite crucible 110 is prevented from being corroded by the cosolvent.
It is noted that the thickness of the carbide crucible lining 150 in this embodiment is 1-2 times the thickness of the graphite crucible 110. Preferably, the thickness of the carbide crucible lining 150 is 1.5 times the thickness of the graphite crucible 110, and the thickness of the silicon carbide crucible lining is not too thin or too thin, on the one hand, by using a carbide crucible lining 150 of sufficient thickness, it is possible to ensure that a stable supply of source components can be provided throughout the silicon carbide crystal growth cycle, and on the other hand, by using a carbide crucible lining 150 of relatively small thickness, it is possible to reduce the manufacturing cost and difficulty.
In this embodiment, the thickness of the graphite crucible 110 is 10mm-15mm. Preferably, the graphite crucible 110 has a thickness of 10mm and the silicon carbide crucible liner has a thickness of 15mm. Of course, the thicknesses of the graphite crucible 110 and carbide crucible liner 150 are merely illustrative and not limiting.
Further, the silicon carbide growing device 100 further comprises a seed shaft 170 and a seed plate 171, wherein the seed shaft 170 extends into the graphite crucible 110, the seed plate 171 is disposed at one end of the seed shaft 170 extending into the graphite crucible 110, and the carbide crucible lining 150 is disposed at least around the seed plate 171 and spaced from the seed plate 171. Specifically, a pulling assembly is disposed above the seed crystal support shaft 170, and the pulling assembly can drive the seed crystal support shaft 170 to move up and down, and the carbide crucible lining 150 is spaced from the seed crystal sheet 171, so that interference between the subsequent crystal growth and the surrounding can be avoided.
In this embodiment, the graphite crucible 110 includes a crucible body 111 and a crucible cover 113, the carbide crucible lining 150 is disposed on the inner wall of the crucible body 111, the crucible cover 113 is disposed on the crucible body 111, and the crucible cover 113 is provided with a shaft hole through which the seed crystal support shaft 170 penetrates. Specifically, the side lining layer 151 covers the side wall of the crucible body 111, and the side lining layer 151 is conveniently manufactured with the crucible cover 113 as a boundary. Of course, the shape of the crucible cover 113 is adapted to the shape of the opening of the crucible body 111, so that the crucible cover can be covered on the opening of the crucible body 111.
In this embodiment, the silicon carbide growing device 100 further includes an insulating layer 190, and the insulating layer 190 is coated on the outer side of the graphite crucible 110. Specifically, the insulating layer 190 may be a graphite soft felt, which is coated on the outer side wall and the bottom wall of the crucible body 111 and is coated on the outer side surface of the crucible cover 113 at the same time, and the top end of the insulating layer 190 is also provided with an opening for the seed crystal support shaft 170 to pass through.
It should be noted that, in order to further ensure the heat insulation effect of the heat insulation layer 190, in this embodiment, the top opening size of the heat insulation layer 190 may be adapted to the outer diameter of the seed crystal supporting shaft 170, so that the gap between the heat insulation layer 190 and the seed crystal supporting shaft 170 is as small as possible, and preferably, the heat insulation layer 190 may contact with the outer peripheral surface of the seed crystal supporting shaft 170, thereby achieving a better heat insulation effect.
In the present embodiment, the heating coil 130 is cylindrical and surrounds the periphery of the graphite crucible 110, and the graphite crucible 110 is located between the top end surface and the bottom end surface of the heating coil 130. Specifically, the heating coil 130 can heat the graphite crucible 110, and since the heating coil 130 covers the entire periphery of the graphite crucible 110, the entire inside of the graphite crucible 110 can be heated, avoiding the occurrence of local uneven heating.
In practical use, the assembly of the graphite crucible 110, the insulating layer 190 and the heating coil 130 may be completed first, wherein a layer of carbide crucible lining 150 is formed by sputtering in advance in the graphite crucible 110, then pure silicon raw material is added into the graphite crucible 110, then the seed crystal support shaft 170 bonded with the seed crystal sheet 171 is added, the graphite crucible 110 is heated by the heating coil 130, silicon is melted first in the crystal growth process to form a melt, then silicon carbide is generated by reacting with carbon in the alloy on the surface of the carbide crucible lining 150, and crystal growth is performed at the lower end of the seed crystal sheet 171 under the convection effect, wherein the process and principle of crystal growth are the same as those of the conventional liquid phase method. As growth continues, the lining carbide reacts with the silicon melt from the inside-out assembly to form a relay, providing a stable source component supply for crystal growth.
In summary, the present embodiment provides a silicon carbide growing apparatus 100, by disposing the carbide crucible lining 150 on the inner side surface of the graphite crucible 110, the carbide crucible lining 150 contains metal carbide, and the graphite crucible 110 further contains the silicon co-solvent 200, the carbide crucible lining 150 contacts with the silicon co-solvent 200, and the silicon co-solvent 200 can react with carbon in the metal carbide to generate silicon carbide, and crystal growth is performed under the convection effect, and as the growth proceeds, the carbide crucible lining 150 gradually reacts with the silicon melt from inside to outside to form relay, so as to provide stable source component supply for crystal growth. The components, temperature, viscosity and other parameters of the cosolvent are not changed greatly, so that the difficulty of stable growth control is lower. Compared with the prior art, the silicon carbide growth device 100 provided in this embodiment can realize stable growth of silicon carbide crystals and ensure crystal quality. Meanwhile, the cost is low, and the preparation process is simple and reliable.
The above description is only of the preferred embodiments of the present utility model and is not intended to limit the present utility model, but various modifications and variations can be made to the present utility model by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.
Claims (10)
1. A silicon carbide growing apparatus, comprising:
a graphite crucible (110), wherein a silicon cosolvent (200) is contained in the graphite crucible (110);
a heating coil (130), the heating coil (130) being disposed around the graphite crucible (110) for heating the graphite crucible (110);
a carbide crucible liner (150), the carbide crucible liner (150) being disposed on an inner wall of the graphite crucible (110) and being configured to contact the silicon co-solvent (200);
wherein the carbide crucible liner (150) contains metal carbide therein, and the silicon cosolvent (200) is used for reacting with carbon in the metal carbide to generate silicon carbide.
2. The silicon carbide growing device of claim 1, wherein the carbide crucible liner (150) comprises a side liner (151), the side liner (151) overlying an inner sidewall of the graphite crucible (110), and at least a portion of the side liner (151) is for contact with the silicon co-solvent (200).
3. The silicon carbide growing device of claim 2, wherein the carbide crucible liner (150) further comprises a base liner (153), the base liner (153) overlying a bottom wall of the graphite crucible (110).
4. A silicon carbide growth apparatus as claimed in claim 3, wherein the side lining layer (151) extends to the bottom wall of the graphite crucible (110) and is integrally connected to the base lining layer (153), and the side lining layer (151) and the base lining layer (153) are each an aluminium carbide layer, a chromium carbide layer or a titanium carbide layer.
5. The silicon carbide growing device according to claim 1, wherein the thickness of the carbide crucible lining (150) is 1-2 times the thickness of the graphite crucible (110).
6. A silicon carbide growth apparatus as claimed in claim 5, wherein the graphite crucible (110) has a thickness of 10mm to 15mm.
7. The silicon carbide growing device according to any one of claims 1 to 6, further comprising a seed shaft (170) and a seed sheet (171), the seed shaft (170) extending into the graphite crucible (110), the seed sheet (171) being disposed at an end of the seed shaft (170) extending into the graphite crucible (110), and the carbide crucible lining (150) being disposed at least around the seed wafer (171) and spaced apart from the seed sheet (171).
8. The silicon carbide growing device of claim 7, wherein the graphite crucible (110) comprises a crucible body (111) and a crucible cover (113), the carbide crucible lining (150) is disposed on an inner wall of the crucible body (111), the crucible cover (113) is disposed on the crucible body (111), and the crucible cover (113) is provided with a shaft hole through which the seed crystal support shaft (170) penetrates.
9. The silicon carbide growing device according to any one of claims 1-6, further comprising an insulating layer (190), the insulating layer (190) being wrapped around the outside of the graphite crucible (110).
10. The silicon carbide growing device according to any one of claims 1 to 6, wherein the heating coil (130) is cylindrical and surrounds the periphery of the graphite crucible (110), and the graphite crucible (110) is located between a top end face and a bottom end face of the heating coil (130).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321003946.4U CN220132409U (en) | 2023-04-27 | 2023-04-27 | Silicon carbide growing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321003946.4U CN220132409U (en) | 2023-04-27 | 2023-04-27 | Silicon carbide growing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220132409U true CN220132409U (en) | 2023-12-05 |
Family
ID=88960129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321003946.4U Active CN220132409U (en) | 2023-04-27 | 2023-04-27 | Silicon carbide growing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220132409U (en) |
-
2023
- 2023-04-27 CN CN202321003946.4U patent/CN220132409U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5989021A (en) | Quartz crucible with large diameter for pulling single crystal and method of producing the same | |
| JP4288792B2 (en) | Single crystal manufacturing method and single crystal manufacturing apparatus | |
| JP2007076928A (en) | Method and device for manufacturing single crystal | |
| EP1026289B1 (en) | Quartz glass crucible for pulling up silicon single crystal and process for producing the same | |
| EP0293865B1 (en) | Apparatus and process for growing crystals of semiconductor materials | |
| CN220132409U (en) | Silicon carbide growing device | |
| US5895527A (en) | Single crystal pulling apparatus | |
| JPS59213697A (en) | Pulling device for single crystal semiconductor | |
| JP2560418B2 (en) | Single crystal growing equipment | |
| JP3798907B2 (en) | Quartz glass crucible for producing silicon single crystal and method for producing the same | |
| JP2681115B2 (en) | Single crystal manufacturing method | |
| GB2084046A (en) | Method and apparatus for crystal growth | |
| JPH10167881A (en) | Method for pulling semiconductor single crystal | |
| JPS63303893A (en) | Method and device for growing silicon single crystal | |
| CN114959880B (en) | Quartz crucible, crucible assembly and crystal pulling furnace for producing monocrystalline silicon rod | |
| JP2800482B2 (en) | Method for producing silicon single crystal | |
| JPH11292685A (en) | Apparatus for extending life of graphite susceptor for growing silicon single crystal by coating with silicon nitride and extending method | |
| JPH10297997A (en) | Formation of silicon carbide singe crystal | |
| JPH05117074A (en) | Method for producing semiconductor single crystal and apparatus therefor | |
| JP2558171Y2 (en) | Heat shield for single crystal pulling | |
| KR100835292B1 (en) | Crucible for manufacturing silicon single crystal and manufacturing apparatus of silicon single crystal comprising the same | |
| JPS5899195A (en) | Producing device for single crystal of high dissociation pressure compound for semiconductor | |
| JPH11278992A (en) | Pulling of single crystal silicon, device for pulling up the same and graphite crucible or quartz crucible | |
| JP2002234792A (en) | Method of producing single crystal | |
| JPH05238870A (en) | Production of single crystal of compound semiconductor and device therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |