CN114959880B - Quartz crucible, crucible assembly and crystal pulling furnace for producing monocrystalline silicon rod - Google Patents
Quartz crucible, crucible assembly and crystal pulling furnace for producing monocrystalline silicon rod Download PDFInfo
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- CN114959880B CN114959880B CN202210594928.1A CN202210594928A CN114959880B CN 114959880 B CN114959880 B CN 114959880B CN 202210594928 A CN202210594928 A CN 202210594928A CN 114959880 B CN114959880 B CN 114959880B
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- Prior art keywords
- crucible
- oxygen
- quartz crucible
- silicon rod
- quartz
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- 239000010453 quartz Substances 0.000 title claims abstract description 64
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 239000013078 crystal Substances 0.000 title claims abstract description 40
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 40
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000001301 oxygen Substances 0.000 claims abstract description 44
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000001257 hydrogen Substances 0.000 claims abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 17
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 2
- 239000004917 carbon fiber Substances 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 10
- 230000006911 nucleation Effects 0.000 abstract description 4
- 238000010899 nucleation Methods 0.000 abstract description 4
- 238000001556 precipitation Methods 0.000 abstract description 4
- 238000007654 immersion Methods 0.000 abstract description 3
- 230000002776 aggregation Effects 0.000 abstract 1
- 238000004220 aggregation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 14
- 239000000155 melt Substances 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910002804 graphite Inorganic materials 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000009991 scouring Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005501 phase interface Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The embodiment of the invention discloses a quartz crucible, which comprises: a bottom portion; a circumferential portion comprising an additional layer on a radially inner side; wherein the additional layer comprises an oxygen-enriched layer and a silicon-based hydrogen-enriched layer arranged on the oxygen-enriched layer. The silicon-based hydrogen-rich layer of the quartz crucible is decomposed firstly and the decomposed hydrogen is immersed into the monocrystalline silicon rod under the action of convection, so that the precipitation of oxygen can be inhibited, further aggregation and growth of defects in the monocrystalline silicon rod after nucleation are inhibited, the defects are controlled to be smaller in size, the problem that the local oxygen of the monocrystalline silicon rod is higher in the early stage of crystal pulling can be well solved, and the overall yield of the crystal rod is improved; and along with the thinning of the silicon-based hydrogen-rich layer, the oxygen-rich layer is exposed to the silicon solution, a large amount of oxygen is separated out, so that the immersion of oxygen in the monocrystalline silicon rod at the moment is improved, and the oxygen content at the tail end of the monocrystalline silicon rod at the later stage of crystal pulling is further improved, and the aim of uniformly distributing the whole oxygen content of the monocrystalline silicon rod is fulfilled.
Description
Technical Field
The invention relates to the field of semiconductor silicon wafer production, in particular to a quartz crucible, a crucible assembly and a crystal pulling furnace for producing a monocrystalline silicon rod.
Background
Silicon wafers used for producing semiconductor electronic devices such as integrated circuits are mainly produced by slicing single crystal silicon rods drawn by a Czochralski (Czochralski) method. The Czochralski method involves melting polycrystalline silicon from a crucible assembly to obtain a silicon melt, immersing a single crystal seed into the silicon melt, and continuously lifting the seed off the surface of the silicon melt, thereby growing a single crystal silicon rod at the phase interface during the movement. When the dopant is added, the polysilicon is melted with the dopant dissolved, and with the continuous growth of the single crystal silicon rod, the melt in the quartz crucible is also continuously lowered, and when the single crystal silicon rod is pulled, only a small amount of melt remains in the quartz crucible.
Along with the continuous improvement of the quality of the silicon wafer, the method has higher control requirements on the crystal defects of the crystal rod in the crystal pulling process. Currently, two of the main factors affecting crystal defects are the crystal pulling process parameters, and the structure and performance of the components providing the thermal field, which are the prerequisites for ingot quality, that can be improved by optimizing the crystal pulling process parameters. In addition, improving the performance of the components of the thermal field is also a critical indicator of the quality improvement of the ingot. Due to the increasing demands on the crystal pulling environment of crystal pulling furnaces, the performance and material requirements for the components providing the hot spot are increasing, and in general, these components are required to be not only resistant to high temperatures, but also to have good thermal stability and high purity.
The crucible assembly is one of the most important parts in the thermal field, and is generally divided into an inner side and an outer side, wherein the quartz crucible positioned on the inner side is used for containing silicon solution, oxygen in the crystal rod is decomposed from the quartz crucible, and the outer side is generally a graphite crucible and plays roles in supporting the quartz crucible and transferring heat. However, the common problems with existing crucible assemblies are: the quartz crucible will cause uneven oxygen distribution of the pulled ingot and the service life of the graphite crucible is short.
Disclosure of Invention
In order to solve the above-described technical problems, embodiments of the present invention desire to provide a quartz crucible, a crucible assembly, and a crystal pulling furnace capable of promoting oxygen concentration distribution in a single crystal silicon rod and having a long life.
The technical scheme of the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides a quartz crucible, the quartz crucible including: a bottom portion; a circumferential portion comprising an additional layer on a radially inner side; wherein the additional layer comprises an oxygen-enriched layer and a silicon-based hydrogen-enriched layer arranged on the oxygen-enriched layer.
In a second aspect, embodiments of the present invention provide a crucible assembly, comprising: the quartz crucible according to the first aspect; an outer crucible; wherein the quartz crucible is nested in the outer crucible, the outer crucible being for supporting the quartz crucible and transferring heat to the quartz crucible.
In a third aspect, embodiments of the present invention provide a crystal pulling furnace comprising a crucible assembly according to the second aspect.
The embodiment of the invention provides a quartz crucible, a crucible assembly and a crystal pulling furnace for producing a single crystal silicon rod, wherein an additional layer is formed on the radial inner side of the quartz crucible, the additional layer comprises an oxygen-enriched layer and a silicon-based hydrogen-enriched layer arranged on the oxygen-enriched layer, and in the process of producing the single crystal silicon rod by using the quartz crucible, the crucible assembly or the crystal pulling furnace provided by the embodiment of the invention, the silicon-based hydrogen-enriched layer of the quartz crucible is firstly decomposed and decomposed hydrogen is immersed into the single crystal silicon rod under the action of convection, so that the precipitation of oxygen can be inhibited, meanwhile, the hydrogen can be effectively inhibited to further gather and grow after nucleation of defects in the single crystal silicon rod so as to control the defects to be in a smaller size and well solve the problem of partial oxygen crystal pulling of the earlier single crystal silicon rod, thereby improving the overall yield of the crystal rod; and along with the thinning of the silicon-based hydrogen-rich layer, the oxygen-rich layer is exposed to the silicon solution, a large amount of oxygen is separated out, so that the immersion of oxygen in the monocrystalline silicon rod at the moment is improved, and the oxygen content at the tail end of the monocrystalline silicon rod at the later stage of crystal pulling is further improved, and the aim of uniformly distributing the whole oxygen content of the monocrystalline silicon rod is fulfilled.
Drawings
FIG. 1 is a schematic diagram of one implementation of a conventional crystal puller;
FIG. 2 is another schematic diagram of the conventional crystal puller of FIG. 1;
FIG. 3 is a schematic view of a quartz crucible according to an embodiment of the present invention;
FIG. 4 is a schematic view of a quartz crucible according to another embodiment of the present invention;
FIG. 5 is a schematic view of a crucible assembly according to an embodiment of the present invention;
FIG. 6 is a schematic view of a crucible assembly according to another embodiment of the present invention;
FIG. 7 is a schematic view of a crucible assembly according to yet another embodiment of the present invention;
FIG. 8 is a schematic diagram of a crystal pulling furnace according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to FIGS. 1 and 2, one implementation of a conventional crystal pulling furnace is shown. As shown in fig. 1, the crystal pulling furnace 1 includes: a furnace chamber surrounded by the housing 2, a crucible assembly 10 disposed within the furnace chamber, a graphite heater 20, a crucible rotation mechanism 30, and a crucible carrying apparatus 40. The crucible assembly 10 is carried by a crucible carrying apparatus 40, and the crucible rotation mechanism 30 is located below the crucible carrying apparatus 40 for driving the crucible assembly 10 to rotate about its own axis in the direction R.
When pulling a single crystal silicon rod using the crystal pulling furnace 1, first, a high purity polycrystalline silicon raw material is placed into the crucible assembly 10 and the crucible assembly 10 is continuously heated by the graphite heater 20 while the crucible rotation mechanism 40 drives the crucible assembly 10 to rotate in the direction R to melt the polycrystalline silicon raw material contained in the crucible assembly 10 into a molten state, i.e., into the melt S2, wherein the heating temperature is maintained at about one thousand degrees celsius, and the gas in the furnace is usually an inert gas, so that the polycrystalline silicon is melted without generating an unnecessary chemical reaction. When the liquid level temperature of the melt S2 is controlled to be at the critical point of crystallization by controlling the thermal field provided by the graphite heater 20, by pulling up the single crystal seed S1 located above the liquid level from the liquid level in the direction T, the melt S2 rises along with the pulling up of the single crystal seed S1 to grow a single crystal silicon rod S3 in accordance with the crystal orientation of the single crystal seed S1.
As the pulling process proceeds, the melt S2 gradually decreases. As shown in fig. 2, when the single crystal silicon rod S3 is completely separated from the melt S2 at the end of the drawing process, only a small amount of the melt S2 remains in the crucible assembly 10. Since the melt S2 gradually decreases during the pulling process, the contact area of the melt S2 with the crucible assembly 10 also gradually decreases, which results in uneven oxygen content in the single crystal silicon rod S3, with low head-to-tail conditions. In addition, the conventional crucible assembly is generally composed of a graphite crucible and a quartz crucible nested in the graphite crucible, wherein the graphite crucible plays a role in supporting the quartz crucible and transferring heat, however, the service life of the graphite material is short, and the graphite material needs to be replaced in general more than 30 furnaces.
In order to solve the problems described above, in a first aspect, an embodiment of the present invention proposes a quartz crucible. Specifically, referring to fig. 3, an embodiment of the present invention provides a quartz crucible 100 for pulling a crystal ingot, the quartz crucible 100 comprising: a bottom portion 101; a circumferential portion 102, said circumferential portion 102 comprising an additional layer 103 on the radially inner side; wherein the additional layer 103 comprises an oxygen-rich layer 103A and a silicon-based hydrogen-rich layer 103B disposed on the oxygen-rich layer 103A.
The embodiment of the invention provides a quartz crucible; an additional layer 103 is formed on the radial inner side of the quartz crucible, the additional layer 103 comprises an oxygen-enriched layer 103A and a silicon-based hydrogen-enriched layer 103B arranged on the oxygen-enriched layer 103A, in the process of producing a single crystal silicon rod by using the quartz crucible, the crucible assembly or the crystal pulling furnace provided by the embodiment of the invention, the silicon-based hydrogen-enriched layer of the quartz crucible is decomposed firstly and decomposed hydrogen is immersed into the single crystal silicon rod under the action of convection, thereby being capable of inhibiting the precipitation of oxygen, simultaneously being capable of effectively inhibiting the nucleation of defects in the single crystal silicon rod, further gathering and growing up to control the defects to be smaller in size and being capable of well solving the problem of partial oxygen bias of the single crystal silicon rod in the early stage of crystal pulling, and being capable of improving the overall yield of the crystal rod; and along with the thinning of the silicon-based hydrogen-rich layer, the oxygen-rich layer is exposed to the silicon solution, a large amount of oxygen is separated out, so that the immersion of oxygen in the monocrystalline silicon rod at the moment is improved, and the oxygen content at the tail end of the monocrystalline silicon rod at the later stage of crystal pulling is further improved, and the aim of uniformly distributing the whole oxygen content of the monocrystalline silicon rod is fulfilled.
For the provision of the additional layer, preferably, referring to fig. 4, the circumferential portion 102 comprises a straight wall portion 102A and a circular arc wall portion 102B located between the straight wall portion 102A and the bottom portion 101, wherein the additional layer 103 is provided on the circular arc wall portion 102B.
In the drawing process of the single crystal silicon rod, the oxygen in the single crystal silicon rod is in a state of higher head and lower tail in the length direction due to the segregation influence of oxygen, however, by using the quartz crucible provided by the embodiment of the invention, since the additional layer is formed on the arc wall part 102B, the silicon-based hydrogen-rich layer at the arc wall part 102B is firstly decomposed in the equal diameter initial stage of the drawing process, so that the defect in the single crystal silicon rod is restrained from further gathering and growing after nucleation by restraining the oxygen precipitation at the arc wall part 102B, the problem that the defect in the equal diameter initial stage further grows due to the fluctuation of the drawing speed is solved, and the problem that the oxygen in the head of the drawn single crystal silicon rod is higher is solved, and a large amount of oxygen is precipitated at the moment along with the oxygen-rich layer in the later period of waiting period, so that the oxygen content in the end of the single crystal silicon rod is further improved.
According to an embodiment of the present invention, the thickness of each portion of the quartz crucible 100 may be different, and preferably, the thickness of the circumferential portion 102 is greater than the thickness of the bottom portion 101.
Further, it is preferable that the thickness of the circular arc wall portion 102B is larger than the thickness of the straight wall portion 102A.
According to a preferred embodiment of the present invention, the thickness ratio of the straight wall portion 102A, the circular arc wall portion 102B, and the bottom portion 101 is: 6:8:5. In the process of drawing the monocrystalline silicon rod, the silicon solution can scour the radial inner side of the quartz crucible, wherein the scouring action of the silicon solution on the arc wall part is strongest, and the scouring action on the bottom part is smallest, so that the wall thickness of the arc wall part is set to be thickest, and the wall thickness of the bottom part is set to be thinnest, and the service life of the quartz crucible can be optimized on the premise of ensuring reasonable cost.
In a second aspect, referring to fig. 5, an embodiment of the present invention provides a crucible assembly GS, the crucible assembly GS including: the quartz crucible 100 according to the first aspect; an outer crucible 200; wherein the quartz crucible 100 is nested in the outer crucible 200, the outer crucible 200 being used to support the quartz crucible 100 and transfer heat to the quartz crucible 100.
To better support the quartz crucible 100, preferably, referring to fig. 6, the outer crucible 200 comprises a first flange 201 extending radially outwardly in a horizontal direction at the mouth of the outer crucible 200, and the quartz crucible 100 comprises a second flange 104 extending radially outwardly in a horizontal direction at the mouth of the quartz crucible, the first flange 201 and the second flange 104 being arranged such that the second flange 104 rests on the first flange 201 when the quartz crucible 100 is nested in the outer crucible 200.
Referring to fig. 6, the outer crucible 200 has a substantially cylindrical shape, and in use, the outer crucible 200 serves to receive heat from the heater and uniformly transfer the heat to the quartz crucible 100 nested inside the outer crucible 200, and the quartz crucible 100 further uniformly transfers the heat to the silicon solution contained therein, and since the quartz crucible is softened and collapsed during heating, it is required to be well supported by the outer crucible, according to an embodiment of the present invention, by providing both the outer crucible 200 and the quartz crucible 100 with horizontal flanges at the mouth, and providing the flanges of both with flanges of the quartz crucible 100 to overlap the flanges of the outer crucible 200 when the quartz crucible 100 is nested in the outer crucible 200, a better support of the outer crucible 200 to the quartz crucible 100 is achieved, and softening and collapsing of the quartz crucible 100 is prevented.
In order to provide the outer crucible with a better service life, the outer crucible 200 is preferably made of a carbon fiber composite material.
According to the preferred embodiment of the present invention, referring to fig. 7, the outer crucible 200 is formed in a cylindrical shape with a planar bottom surface, whereby the outer crucible 200 can be heated more uniformly and heat can be transferred to the solution uniformly again, and the shaking of the silicon solution melt can be suppressed more smoothly during the rotation.
In a third aspect, referring to FIG. 8, an embodiment of the present invention provides a crystal puller LF comprising a crucible assembly GS according to the second aspect described above.
It should be noted that: the technical schemes described in the embodiments of the present invention may be arbitrarily combined without any collision.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. A quartz crucible for producing a single crystal silicon rod, the quartz crucible comprising:
a bottom portion;
a circumferential portion comprising an additional layer on a radially inner side;
wherein the additional layer comprises an oxygen-enriched layer and a silicon-based hydrogen-enriched layer arranged on the oxygen-enriched layer,
the circumferential portion includes a straight wall portion and a radiused wall portion between the straight wall portion and the bottom portion, wherein the additional layer is disposed on the radiused wall portion.
2. The quartz crucible of claim 1, wherein the thickness of the peripheral portion is greater than the thickness of the bottom portion.
3. The quartz crucible of claim 2, wherein the arcuate wall portion has a thickness greater than a thickness of the straight wall portion.
4. A crucible assembly, the crucible assembly comprising:
a quartz crucible according to any of claims 1 to 3;
an outer crucible;
wherein the quartz crucible is nested in the outer crucible, the outer crucible being for supporting the quartz crucible and transferring heat to the quartz crucible.
5. The crucible assembly of claim 4, wherein the outer crucible includes a first flange extending radially outwardly in a horizontal direction at the mouth of the outer crucible, and the quartz crucible includes a second flange extending radially outwardly in a horizontal direction at the mouth of the quartz crucible, the first flange and the second flange being configured such that the second flange rests on the first flange when the quartz crucible is nested in the outer crucible.
6. The crucible assembly of claim 4 or 5, wherein the outer crucible is made of a carbon fiber composite material.
7. The crucible assembly of claim 4 or 5, wherein the outer crucible is formed in a cylindrical shape with a planar bottom surface.
8. A crystal pulling furnace comprising the crucible assembly of any one of claims 4 to 7.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210594928.1A CN114959880B (en) | 2022-05-27 | 2022-05-27 | Quartz crucible, crucible assembly and crystal pulling furnace for producing monocrystalline silicon rod |
| TW111137961A TWI815688B (en) | 2022-05-27 | 2022-10-06 | A quartz crucible, crucible component and crystal pulling furnace for producing single crystal silicon rods |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210594928.1A CN114959880B (en) | 2022-05-27 | 2022-05-27 | Quartz crucible, crucible assembly and crystal pulling furnace for producing monocrystalline silicon rod |
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| Publication Number | Publication Date |
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| CN114959880A CN114959880A (en) | 2022-08-30 |
| CN114959880B true CN114959880B (en) | 2024-02-13 |
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| CN (1) | CN114959880B (en) |
| TW (1) | TWI815688B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04108683A (en) * | 1990-08-28 | 1992-04-09 | Shin Etsu Handotai Co Ltd | Silica glass crucible |
| US5369061A (en) * | 1992-06-16 | 1994-11-29 | Sony Corporation | Method of producing semiconductor device using a hydrogen-enriched layer |
| JP2005306708A (en) * | 2004-03-26 | 2005-11-04 | Kuramoto Seisakusho Co Ltd | Quartz crucible |
| JP2007314390A (en) * | 2006-05-29 | 2007-12-06 | Sumco Corp | Manufacturing method of silicon single crystal |
| CN101435107A (en) * | 2007-10-04 | 2009-05-20 | 硅得荣株式会社 | Method for growing silicon ingot |
| CN109627050A (en) * | 2018-12-25 | 2019-04-16 | 宁波宝斯达坩埚保温制品有限公司 | A kind of quartz crucible inner surface coating and preparation method thereof |
| CN110983429A (en) * | 2019-12-23 | 2020-04-10 | 西安奕斯伟硅片技术有限公司 | Single crystal furnace and monocrystalline silicon preparation method |
| US10991838B1 (en) * | 2020-05-29 | 2021-04-27 | Jinko Green Energy (Shanghai) Management Co., LTD | Photovoltaic module, solar cell, and manufacturing method therefor |
| JP2021075425A (en) * | 2019-11-11 | 2021-05-20 | グローバルウェーハズ・ジャパン株式会社 | Method for manufacturing silicon single crystal |
| CN113832537A (en) * | 2021-09-30 | 2021-12-24 | 西安奕斯伟材料科技有限公司 | Quartz crucible and crystal pulling furnace |
| CN113862778A (en) * | 2021-09-30 | 2021-12-31 | 西安奕斯伟材料科技有限公司 | Crucible assembly, crystal pulling furnace and method for pulling monocrystalline silicon rod |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4427775B2 (en) * | 2002-03-29 | 2010-03-10 | ジャパンスーパークォーツ株式会社 | Surface-modified quartz glass crucible and its surface modification method |
| JP4678667B2 (en) * | 2004-06-07 | 2011-04-27 | 信越石英株式会社 | Silica glass crucible for pulling silicon single crystal and method for producing the same |
| JP4995069B2 (en) * | 2007-12-28 | 2012-08-08 | ジャパンスーパークォーツ株式会社 | Internal crystallization crucible and pulling method using the crucible |
| CN104066873A (en) * | 2011-09-09 | 2014-09-24 | 英诺文特科技公司 | Coated crucible and method of making a coated crucible |
| CN114347218A (en) * | 2021-12-28 | 2022-04-15 | 宁夏盾源聚芯半导体科技股份有限公司 | Preparation device and method of quartz crucible for improving tail oxygen content of czochralski single crystal silicon rod and quartz crucible |
-
2022
- 2022-05-27 CN CN202210594928.1A patent/CN114959880B/en active Active
- 2022-10-06 TW TW111137961A patent/TWI815688B/en active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04108683A (en) * | 1990-08-28 | 1992-04-09 | Shin Etsu Handotai Co Ltd | Silica glass crucible |
| US5369061A (en) * | 1992-06-16 | 1994-11-29 | Sony Corporation | Method of producing semiconductor device using a hydrogen-enriched layer |
| JP2005306708A (en) * | 2004-03-26 | 2005-11-04 | Kuramoto Seisakusho Co Ltd | Quartz crucible |
| JP2007314390A (en) * | 2006-05-29 | 2007-12-06 | Sumco Corp | Manufacturing method of silicon single crystal |
| CN101435107A (en) * | 2007-10-04 | 2009-05-20 | 硅得荣株式会社 | Method for growing silicon ingot |
| CN109627050A (en) * | 2018-12-25 | 2019-04-16 | 宁波宝斯达坩埚保温制品有限公司 | A kind of quartz crucible inner surface coating and preparation method thereof |
| JP2021075425A (en) * | 2019-11-11 | 2021-05-20 | グローバルウェーハズ・ジャパン株式会社 | Method for manufacturing silicon single crystal |
| CN110983429A (en) * | 2019-12-23 | 2020-04-10 | 西安奕斯伟硅片技术有限公司 | Single crystal furnace and monocrystalline silicon preparation method |
| US10991838B1 (en) * | 2020-05-29 | 2021-04-27 | Jinko Green Energy (Shanghai) Management Co., LTD | Photovoltaic module, solar cell, and manufacturing method therefor |
| CN113832537A (en) * | 2021-09-30 | 2021-12-24 | 西安奕斯伟材料科技有限公司 | Quartz crucible and crystal pulling furnace |
| CN113862778A (en) * | 2021-09-30 | 2021-12-31 | 西安奕斯伟材料科技有限公司 | Crucible assembly, crystal pulling furnace and method for pulling monocrystalline silicon rod |
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| CN114959880A (en) | 2022-08-30 |
| TW202305195A (en) | 2023-02-01 |
| TWI815688B (en) | 2023-09-11 |
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