CN219998703U - Driving control system of semiconductor laser - Google Patents
Driving control system of semiconductor laser Download PDFInfo
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- CN219998703U CN219998703U CN202321327907.XU CN202321327907U CN219998703U CN 219998703 U CN219998703 U CN 219998703U CN 202321327907 U CN202321327907 U CN 202321327907U CN 219998703 U CN219998703 U CN 219998703U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000005070 sampling Methods 0.000 claims abstract description 14
- 238000005057 refrigeration Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 2
- 230000002457 bidirectional effect Effects 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 238000012994 industrial processing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- 238000003199 nucleic acid amplification method Methods 0.000 description 1
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Abstract
The utility model discloses a driving control system of a semiconductor laser, which comprises a microcontroller, a laser driving circuit and a temperature control circuit, wherein the laser driving circuit comprises a switch circuit, a constant current source circuit and a sampling circuit, driving signals of the microcontroller are sent to the laser through the switch circuit and the constant current source circuit, and the sampling circuit sends collected feedback signals of the laser to the microcontroller; the temperature control circuit comprises a temperature measuring circuit and a temperature regulator driving circuit, a temperature regulator and a temperature sensor are arranged in the laser, the microcontroller sends a temperature control signal to the temperature regulator through the temperature regulator driving circuit, and the temperature measuring circuit is connected with the temperature sensor to feed back a temperature signal to the microcontroller. The utility model not only realizes bidirectional and rapid temperature control, but also has small temperature drift, and the temperature control performance can meet the requirement of stable and rapid control.
Description
Technical Field
The present utility model relates to a laser control system, and more particularly, to a drive control system for a semiconductor laser.
Background
The semiconductor laser is widely applied to the fields of laser radar, laser sensing, industrial processing and the like due to the advantages of small volume, high efficiency, low cost and the like. However, the output wavelength and the stability of the output power of the semiconductor laser are extremely susceptible to the drive current and the operating temperature. Wherein the temperature affects the wavelength to about 0.01 nm/DEG C. Also, as the temperature increases, the power of the laser will also fluctuate. Therefore, precise control of the laser output power and the operating temperature of the semiconductor laser is required.
When controlling the power stability of the laser, the existing scheme is realized based on a constant power control mode, the output power of the laser is measured through a photoelectric detector, then the measured output power is converted into a corresponding current signal in real time, a voltage signal is obtained after trans-impedance conversion and voltage amplification, and the voltage signal is used as the input voltage of PID feedback control after analog-to-digital conversion; in the PID feedback control program, the deviation between the input voltage and the set voltage is compared, and the adjustment quantity is obtained through calculation, so that the output voltage of the controller is adjusted in real time and stabilized, and the purpose of stabilizing the output power of the laser is finally achieved. The existing scheme has the following defects: 1. the input voltage of PID feedback control is obtained based on a hardware circuit, the hardware circuit has certain reaction time, so that the power adjustment time of the PID algorithm is longer, the adjustment stability is influenced, and meanwhile, the cost is increased by the hardware circuit; 2. the photoelectric detector is made of semiconductor materials and is a temperature sensitive device, the output characteristic of the photoelectric detector can change along with the temperature, the measured output power possibly deviates from the actual output power, and the output power of the laser is difficult to stabilize; 3. the power control is performed based on the corresponding relation between the voltage and the actual output power, and as the laser diode also has temperature sensitive characteristics, the electro-optical conversion efficiency at different temperature moments is different, and the relation between the voltage and the actual output power can be changed. Therefore, the control effect of the laser optical power stability of the existing scheme is limited.
When the working temperature of the laser is controlled, the existing scheme is realized by means of the TEC driving chip ADN8831, the temperature control precision can meet the application requirement, but the peripheral circuit has high realization cost and large occupied space, and the temperature is set by means of the resistor (generally 25 ℃), so that the operation is inconvenient.
Therefore, it is necessary to provide a driving control system for a semiconductor laser, which can rapidly and accurately realize stable control of the temperature and power of the semiconductor laser.
Disclosure of Invention
The utility model aims to provide a driving control system of a semiconductor laser, which solves the problem that the power stability control effect of the existing laser is poor.
The technical scheme adopted by the utility model for solving the technical problems is that the driving control system of the semiconductor laser comprises a microcontroller, a laser driving circuit and a temperature control circuit, wherein the laser driving circuit comprises a switch circuit, a constant current source circuit and a sampling circuit, driving signals of the microcontroller are sent to the laser through the switch circuit and the constant current source circuit, and the sampling circuit sends collected feedback signals of the laser to the microcontroller; the temperature control circuit comprises a temperature measuring circuit and a temperature regulator driving circuit, a temperature regulator and a temperature sensor are arranged in the laser, the microcontroller sends a temperature control signal to the temperature regulator through the temperature regulator driving circuit, and the temperature measuring circuit is connected with the temperature sensor to feed back a temperature signal to the microcontroller.
Further, the temperature measuring circuit converts the acquired temperature signal of the analog quantity into a measured temperature value of the digital quantity and sends the measured temperature value to the microcontroller, and the microcontroller compares the measured temperature value with a set working temperature value and outputs a temperature control signal to the thermostat driving circuit; the thermostat driving circuit includes an H-bridge driver, and converts a temperature control signal into a pulse width modulated wave that drives the thermostat.
Further, the temperature regulator is a semiconductor refrigeration piece which is integrated in the laser; the temperature regulator receives a current driving signal sent by the temperature regulator driving circuit; the direction of the current driving signal determines that the working state of the temperature regulator is refrigeration or heating, and the magnitude of the current driving signal determines the magnitude of refrigeration capacity or heating capacity.
Further, the sampling circuit collects the driving voltage of the laser, and the sampling circuit converts the collected driving voltage signal of the analog quantity into a driving voltage value of the digital quantity and sends the driving voltage value of the digital quantity to the microcontroller; the microcontroller compares the driving voltage value with a set voltage value to output a control voltage to the switching circuit.
Further, the system also comprises an upper computer, wherein the upper computer is connected with the microcontroller, and a working temperature value and a laser output power value are set in the upper computer.
Compared with the prior art, the utility model has the following beneficial effects: the driving control system of the semiconductor laser provided by the utility model can enable the actual working temperature of the semiconductor laser to cover the working temperature range required by the laser specification, so that the bidirectional rapid temperature control is realized, the temperature drift can be accurate to within +/-0.03 ℃ of the set temperature value, and the temperature control performance can meet the requirements of control stability and rapidness; and particularly, the pulse width modulation is carried out through the H-bridge driver, so that the temperature control of the semiconductor refrigerating sheet is realized, excessive peripheral circuits are not needed, the cost is low, and the use is convenient.
Drawings
Fig. 1 is a schematic diagram of a driving control system of a semiconductor laser in an embodiment of the present utility model;
FIG. 2 is a schematic block diagram of a temperature control system in an embodiment of the utility model;
FIG. 3 is a graph showing the temperature control performance at ambient temperature of 0℃and 40℃in the experiment of the present utility model.
Detailed Description
The utility model is further described below with reference to the drawings and examples.
Fig. 1 is a schematic diagram of a driving control system of a semiconductor laser according to an embodiment of the present utility model.
Referring to fig. 1, a driving control system of a semiconductor laser according to an embodiment of the present utility model includes a microcontroller, a laser driving circuit and a temperature control circuit, the laser driving circuit includes a switch circuit, a constant current source circuit and a sampling circuit, a driving signal of the microcontroller is sent to the laser via the switch circuit and the constant current source circuit, and the sampling circuit sends a feedback signal of the collected laser to the microcontroller; the temperature control circuit comprises a temperature measuring circuit and a temperature regulator driving circuit, a temperature regulator and a temperature sensor are arranged in the laser, the microcontroller sends a temperature control signal to the temperature regulator through the temperature regulator driving circuit, and the temperature measuring circuit is connected with the temperature sensor and feeds the temperature signal back to the microcontroller.
Specifically, the temperature measuring circuit converts the acquired temperature signal of the analog quantity into a measured temperature value of the digital quantity and sends the measured temperature value to the microcontroller, and the microcontroller compares the measured temperature value with a set working temperature value and outputs a temperature control signal to the thermostat driving circuit; the thermostat driving circuit includes an H-bridge driver, and converts the temperature control signal into a pulse width modulated wave that drives the thermostat.
Referring to fig. 2, the temperature sensor is a thermistor (RHT), the H-bridge driver adopts a DRV8212 chip, the microcontroller adopts a singlechip STM32, the H-bridge driving chip DRV8212 is a core device of the TEC driving circuit, and the working states of the H-bridge driving chip DRV8212 include the following three types, firstly, when IN1 of the DRV8212 is at a high level and IN2 is at a low level, the chip outputs positively, and the TEC refrigerates; secondly, when IN1 of the DRV8212 is low level and IN2 is high level, the chip reversely outputs, and the TEC heats; thirdly, when the IN1 and IN2 of the DRV8212 are both low, the chip stops outputting and the TEC does not work.
After the singlechip STM32 obtains an input temperature signal, PID operation is carried out on the temperature signal and a set temperature value, then a corresponding pulse width modulation wave (Pulse Width Modulation, PWM) is generated to control an H-bridge driving chip, so that TEC is driven to work, and finally high-precision temperature control of a laser is realized.
Specifically, the temperature regulator is a semiconductor refrigeration piece, and the semiconductor refrigeration piece is integrated in the laser; the temperature regulator receives a current driving signal sent by a temperature regulator driving circuit; the direction of the current driving signal determines the working state of the temperature regulator to be refrigeration or heating, and the magnitude of the current driving signal determines the magnitude of refrigeration capacity or heating capacity.
Specifically, a sampling circuit collects driving voltage of a laser, and the sampling circuit converts collected driving voltage signals of analog quantity into driving voltage values of digital quantity and sends the driving voltage values to a microcontroller; the microcontroller compares the driving voltage value with the set voltage value to output a control voltage to the switching circuit.
Preferably, the system further comprises an upper computer, wherein the upper computer is connected with the microcontroller, and the working temperature value and the laser output power value are set in the upper computer. The upper computer communicates with the SCM STM32 through the serial port RS232 so as to realize the switching control of the laser, the laser output power setting, the laser working temperature setting and the like.
The driving system of the semiconductor laser can realize stable control of working temperature and stable control of laser output power. For example, the operating temperature is controlled as follows: the microcontroller compares the measured temperature value with a set working temperature value through a PID algorithm, outputs a temperature control signal to a thermostat driving circuit, and drives the thermostat to refrigerate or heat so that the temperature of the laser is stabilized at the set working temperature value; the temperature of the laser is within + -0.05deg.C of the set operating temperature value.
The feedback input of the temperature control PID algorithm is a measured temperature value of a temperature sensor, and the temperature regulator adopts a semiconductor refrigerating sheet, so that the PID parameters of the refrigerating process are not completely suitable for the heating process because the refrigerating and heating efficiencies of the semiconductor refrigerating sheet are not completely the same. After the primary establishment of the refrigeration PID parameters, a heating test is also needed to be performed and fine adjustment is performed, so that the PID parameters applicable to both refrigeration and heating are obtained.
The laser output power is controlled as follows: the microcontroller compares the driving voltage value with the set voltage value through a PID algorithm to output a control voltage signal, and the control voltage signal is output to the laser through the switch circuit and the constant current source circuit, so that the output power of the laser is stabilized at the set laser output power value; the output power of the laser is within + -2 mW of the set laser output power value.
The semiconductor laser provides a drive voltage monitor pin which is connected to a drive voltage acquisition laser employing circuitry, the drive voltage being used as a feedback input to a power control PID algorithm. The output power fluctuation of the laser is within +/-2 mW by the constant voltage control mode, the power control stability and the reliability of the laser are superior to those of the constant power control mode, and the power stability control based on the constant voltage mode requires fewer peripheral devices, design space and realization cost.
After the drive control system of the semiconductor laser provided by the embodiment of the utility model is powered on, the drive control system is communicated with an upper computer through a serial port. The working process is as follows: the microcontroller receives the upper computer instruction, monitors the temperature of the laser and drives the temperature regulator to regulate the temperature before receiving the command of starting the laser until reaching a reasonable working temperature interval. And then, the microcontroller outputs a set voltage value, the laser is turned on, the driving current value of the laser is monitored in real time, and is compared with a relation table of the driving current of the laser and the laser power value, and the microcontroller adjusts the output voltage so as to adjust the output power until the output power of the laser reaches a stable state.
The control effect is verified by the following specific experiments:
the working temperature of the laser is set to 25 ℃, the output power of the laser is set to 500mW, and the semiconductor laser and a control circuit thereof are placed in an incubator for testing. And then the temperature of the incubator is respectively set to be 0 ℃ and 40 ℃, and after the temperature of the incubator is stable, the laser working temperature control performance test is respectively carried out.
The results are shown in fig. 3, with the abscissa representing time in seconds; the ordinate indicates the temperature of the laser thermistor in degrees celsius. As can be seen from fig. 3, the operating temperature of the laser can reach 25 ℃ and remain stable for about 10 seconds no matter the operating environment temperature (incubator temperature) of the laser is 0 ℃ or 40 ℃, the semiconductor cooling sheet has the capability of bidirectional temperature control, and the operating temperature of the semiconductor laser can reach the set operating temperature quickly.
In summary, the driving control system of the semiconductor laser in the embodiment of the utility model can enable the actual working temperature of the semiconductor laser to cover the working temperature range required by the laser specification, thereby realizing bidirectional and rapid temperature control, enabling the temperature drift to be accurate to within +/-0.03 ℃ of the set temperature value, and enabling the temperature control performance to meet the requirement of control stability and rapidness.
While the utility model has been described with reference to the preferred embodiments, it is not intended to limit the utility model thereto, and it is to be understood that other modifications and improvements may be made by those skilled in the art without departing from the spirit and scope of the utility model, which is therefore defined by the appended claims.
Claims (5)
1. The driving control system of the semiconductor laser is characterized by comprising a microcontroller, a laser driving circuit and a temperature control circuit, wherein the laser driving circuit comprises a switch circuit, a constant current source circuit and a sampling circuit, driving signals of the microcontroller are sent to the laser through the switch circuit and the constant current source circuit, and the sampling circuit sends collected feedback signals of the laser to the microcontroller; the temperature control circuit comprises a temperature measuring circuit and a temperature regulator driving circuit, a temperature regulator and a temperature sensor are arranged in the laser, the microcontroller sends a temperature control signal to the temperature regulator through the temperature regulator driving circuit, and the temperature measuring circuit is connected with the temperature sensor to feed back a temperature signal to the microcontroller.
2. The drive control system of a semiconductor laser as claimed in claim 1, wherein the temperature measuring circuit converts the acquired temperature signal of the analog quantity into a measured temperature value of the digital quantity and transmits the measured temperature value to the microcontroller, and the microcontroller compares the measured temperature value with a set operation temperature value to output a temperature control signal to the thermostat driving circuit; the thermostat driving circuit includes an H-bridge driver, and converts a temperature control signal into a pulse width modulated wave that drives the thermostat.
3. The drive control system of a semiconductor laser as claimed in claim 1, wherein the temperature regulator is a semiconductor cooling fin integrated in the laser; the temperature regulator receives a current driving signal sent by the temperature regulator driving circuit; the direction of the current driving signal determines that the working state of the temperature regulator is refrigeration or heating, and the magnitude of the current driving signal determines the magnitude of refrigeration capacity or heating capacity.
4. The drive control system of a semiconductor laser as claimed in claim 1, wherein the sampling circuit collects a drive voltage of the laser, and the sampling circuit converts the collected drive voltage signal of the analog quantity into a drive voltage value of the digital quantity and transmits the drive voltage value to the microcontroller; the microcontroller compares the driving voltage value with a set voltage value to output a control voltage to the switching circuit.
5. The drive control system of a semiconductor laser as claimed in claim 1, further comprising a host computer connected to the microcontroller, wherein an operating temperature value and a laser output power value are set in the host computer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202321327907.XU CN219998703U (en) | 2023-05-29 | 2023-05-29 | Driving control system of semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202321327907.XU CN219998703U (en) | 2023-05-29 | 2023-05-29 | Driving control system of semiconductor laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118137284A (en) * | 2024-01-17 | 2024-06-04 | 山西大学 | Control device of semiconductor laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118137284A (en) * | 2024-01-17 | 2024-06-04 | 山西大学 | Control device of semiconductor laser |
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