CN2713524Y - Temperature controller for Raman optical fiber amplifier - Google Patents
Temperature controller for Raman optical fiber amplifier Download PDFInfo
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- CN2713524Y CN2713524Y CN 200420072621 CN200420072621U CN2713524Y CN 2713524 Y CN2713524 Y CN 2713524Y CN 200420072621 CN200420072621 CN 200420072621 CN 200420072621 U CN200420072621 U CN 200420072621U CN 2713524 Y CN2713524 Y CN 2713524Y
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Abstract
The utility model relates to a temperature controller for a Raman optical fiber amplifier. The temperature controller for the Raman optical fiber amplifier adopts the design proposal of the temperature control system based on the mechanism of a pulse width modulation (PWM), which enables the temperature of a laser in the Raman fiber amplifier to be steady. Thus, the stability of the wave length of a laser source is raised, and the temperature controller for the Raman optical fiber amplifier has higher accuracy. The characteristic of the Raman fiber amplifier is fully exerted. The temperature controller for the Raman optical fiber amplifier comprises the unit of the measure of the laser temperature, the unit of temperature inversion, the unit of measure and magnification, a proportional integral and differential (PID) regulator, a PWM controller, the driver of a semiconducting refrigerator and a thermal energy converter (TEC) which are connected by orders. The unit of the measure of the laser temperature and the TEC are attached on the laser. The mechanism of the PWM modulates D. C. control voltage output by the PID regulator to voltage pulse whose amplitude is equal and width is unequal in a desired frequency period, that is a pulse period is kept immutability. The proportion of positive and negative pulse widths in each pulse period is adjusted. Thus, the forward current and counter current of the TEC are controlled, which realizes refrigeration and heat-production.
Description
Technical field
The utility model relates to a kind of temperature control equipment, relates to the temperature control equipment of Raman fiber amplifier or rather, is a kind of temperature control equipment that has adopted the Raman fiber amplifier of pulse-length modulation (PWM) technology.
Background technology
Raman Fiber Amplifier (RFA) comprises pumping source and gain media, adopts semiconductor laser diode (LD) as pumping (energy) source usually, adopts optical fiber as gain media.
Present stage, the output power of semiconductor laser maximum stable is about 350mW, the Raman gain coefficienct of conventional in addition single-mode fiber (SSMF) is very little, for example, the Raman gain coefficienct of the pure silicon optical fiber 1.2e-8 (m/W) that only has an appointment, therefore, the Raman Fiber Amplifier of high-gain be obtained, a plurality of pumping source actings in conjunction must be needed.By accurately disposing the wavelength and the power of used pumping source, can further constitute the smooth Raman fiber amplifier in broadband again.So the output power of semiconductor laser and the stability of wavelength have just become the key issue of Raman fiber amplifier in designing.
Semiconductor laser is very sensitive to temperature, the quality of temperature effect laser, and the output power of laser instrument changes a lot with the variation of device temperature, so semiconductor laser has higher requirement to the stability of working temperature.
In the temperature control equipment of typical Raman fiber amplifier, under the constant situation of laser instrument output current, can realize the stable of lasing light emitter wavelength by control laser tube core temperature.Under the control of temperature control equipment circuit, the temperature of laser tube core can be stabilized on the constant value, and the common lasers wavelength is about 0.08nm/ ℃ to its temperature dependent representative value, will accelerate laser ageing even damage when temperature is too high.Its main cause is because semiconductor laser external differential quantum efficiency (parameter of expression semiconductor laser work efficiency) and threshold current are temperature variant.The laser diode of most of operate as normal can only be controlled in certain temperature range.In general, external differential quantum efficiency raises with temperature and descends; Threshold current raises with temperature and strengthens, therefore temperature need be controlled under the condition that is fit to laser works, and the fluctuations that will make temperature is less than 0.1 ℃, when the temperature of laser instrument is more stable, the output power of laser beam and wavelength could be stablized, thereby make the pairing Raman gain of each pump light stable, and then obtain the smooth gain spectral in broadband.
The structure of the laser temperature control device that a kind of tradition is used shown in Fig. 1.By temperature measurement unit 11, temperature inversion unit 12, measure amplifying unit 13, proportional-integral-differential (PID) regulating circuit 14, constitute a closed control circuit based on the TEC driving circuit 15 and the semiconductor cooler (TEC:Thermoelectric cooler controller) 16 of metal-oxide-semiconductor.The temperature of temperature measurement unit 11 Laser Measurement devices, temperature inversion unit 12 is a voltage with the temperature transition of measuring, measuring 13 pairs of these voltages of amplifying unit amplifies, proportional-integral-differential regulating circuit 14 adopts pid algorithm, calculate suitable output control signal according to ratio, integration, differential coefficient, drive refrigerator 16 through driving circuit 15, (semiconductor cooler possesses refrigeration and heating capacity to make laser instrument intensification or cooling, but require driving circuit to possess the bi-directional drive ability simultaneously, and temperature does not have the dead band during transition between cold junction and hot junction).
The method that the control variable error is revised in this temperature control equipment utilization realizes closed-loop control, makes control procedure continuous.Its advantage is simple and to have a current ripples little and design easily and make.But this control device power consumption is big, the wavelength control precision is not high, circuit level is lower, from temperature detection to being converted into refrigeration, heating control to refrigerator 16, overlong time, control therebetween has the dead band, and external interference makes control float from the Optimal Control state easily.
The utility model content
The purpose of this utility model is the temperature control equipment of a kind of Raman fiber amplifier of design, by adopting a kind of novel temperature control equipment, improves the wavelength stability of lasing light emitter and has degree of precision, to give full play to the characteristic of Raman fiber amplifier.
The technical scheme that realizes the utility model purpose is: a kind of temperature control equipment of Raman fiber amplifier, comprise the laser temperature measuring unit, the temperature inversion unit, measure amplifying unit, proportional integral derivative controller, the driver of semiconductor cooler and semiconductor cooler, laser temperature measuring unit and semiconductor cooler are attached on the laser instrument in the described Raman fiber amplifier, it is characterized in that: also comprise a Pwm controller, the Pwm controller input end connects the output terminal of described proportional integral derivative controller, and the Pwm controller output terminal is connected with the input end of the driver of described semiconductor cooler.
Described laser temperature measuring unit and temperature inversion unit comprise a temperature sensor, constant-current source circuit, reference voltage is provided with a circuit and a voltage comparator, constant-current source circuit is connected with this temperature sensor, the output terminal of temperature sensor connects voltage comparator one input end, reference voltage is provided with another input end of the output terminal connection voltage comparator of circuit, voltage comparator output temperature voltage of transformation, temperature sensor is attached on the described laser instrument.
Described laser temperature measuring unit and temperature inversion unit connect into the temperature-sensitive bridge diagram by first resistance, second resistance, the 3rd resistance and a thermistor and constitute, thermistor is attached on the described laser instrument, and output error signal is delivered to described measurement amplifying unit during temperature-sensitive bridge diagram out-of-balance condition.
Described measurement amplifying unit is a differential mode amplifier, is connected and composed by two-stage calculation amplifier, the error signal of temperature inversion unit output is carried out differential mode amplify.
Described Pwm controller adopts the integrated pwm chip that comprises LTC1923, ADN8830, DRV594.
The driver of described semiconductor cooler adopts " H " bridge circuit, each is connected into the left and right arms of this " H " bridge by the metal-oxide-semiconductor of two complementations, the serial connection point of two metal-oxide-semiconductors drives described semiconductor cooler by a low-pass filter respectively on the left and right arms, and the left and right arms that is somebody's turn to do " H " bridge is respectively described semiconductor cooler provides forward current and inverse current.
The utility model is provided with Pwm controller between the driver input end of proportion integration differentiation regulating circuit output terminal and semiconductor cooler, because the characteristic of PWM controller itself has determined the temperature control equipment of designed Raman fiber amplifier based on PWM to have the following advantages:
Traditional linear model controller generally adopts push-pull circuit as output stage, and its power efficiency is very low, and the driver of the utility model semiconductor cooler adopts switching tube with switch mode operation, and resistance is very little during conducting, thus the power consumption of effectively reducing; Adopt the PID regulating circuit to control the PWM controller, can be in the closed-loop control process, ceaselessly regulate controlled quentity controlled variable automatically so that controlled laser temperature, reaches the stable dynamic balance state in the control temperature range at last towards the equilibrium state transition of setting according to pre-set control law; Adopt the PWM controller, but the retentive control recurrence interval immobilize, and the pulse width in each recurrence interval is regulated, as make the cooling time in the control cycle long, the time that heats is short, by the pwm circuit of dutycycle continuous variable, can carry out successive control to TEC; Adopt the input stage of PID regulating circuit as the PWM controller, the self-correcting that himself has, steady certainly zero characteristic (maximum drift voltage is lower than 250mV), can improve control accuracy, in the typical case uses, make the target temperature error be lower than ± 0.01 ℃, efficient is better than 90%, the ripple voltage noise is less than 1%, but also can have the monitoring function of whole temperature controlled processes, for example real time temperature monitoring, temperature locking and switching frequency and phase control etc.; Integrated all necessary control circuit and output driving circuits in the PWM controller to drive " H " bridge and the bidirectional current that flows to TEC is provided, have obtained an accurately control loop of stabilized lasers diode temperature.
TEC temperature controller of the present utility model, under 5 ℃ of-70 ℃ of environment temperatures, in the operating power scope of whole laser diode and under low-voltage (3.3V) condition of work, the temperature stabilization that can make laser diode is within 0.01 ℃.
The novel high-precision temperature control device based on PWM is applied to be optimized design in the Raman fiber amplifier temperature control system, the peak that can prevent the emission wavelength of semiconductor laser moves to the long wave direction, thereby the output wavelength and the output power of laser instrument have been stablized, make the light signal after the amplification that better gain characteristic be arranged, improved the noisiness under the high-gain situation, amplify in the real broadband of realizing, the advantage of Raman fiber amplifier is given full play to.
Description of drawings
Fig. 1 is the laser temperature control device structured flowchart that tradition is used;
Fig. 2 is the temperature control device structure block diagram of the Raman fiber amplifier based on PWM of the present utility model;
Fig. 3 is temperature-sensitive bridge diagram structure and a control device structured flowchart of realizing temperature survey and temperature inversion;
Fig. 4 is the enforcement circuit diagram according to the temperature control equipment of Fig. 3 principle design.
Embodiment
The temperature control equipment of Raman fiber amplifier of the present utility model has adopted the design for temperature control system scheme based on pulse-length modulation mechanism (PWM), and has been applied to Raman fiber amplifier, optimizes the integral performance parameter of Raman fiber amplifier.Pulse-length modulation mechanism is in required frequency period, DC voltage is modulated into the not wide sequence of voltage pulses of constant amplitude, promptly keep the recurrence interval to immobilize, and the ratio of the positive and negative pulse width in each recurrence interval is regulated, to reach the purpose of controlled frequency, voltage, electric current and inhibition harmonic wave.
In PWM typical application circuit of the present utility model, the temperature control system of composition can make the temperature stabilization of semiconductor laser (or other elements) within 0.01 ℃.Adopt the PWM modulation system, not only can reduce system power dissipation greatly, also can effectively improve system stability and precision, optimize the overall precision of temperature control system and reduce system cost, and can shorten the control time, solved control accuracy and the contradiction between the control time preferably.
Laser temperature control device based on PWM of the present utility model designs at the one-piece construction characteristics of Raman fiber amplifier, and its control device structure as shown in Figure 2.Comprise that temperature sensor 21, constant current source 23, reference voltage are provided with circuit 24, voltage comparator 25, deviation voltage amplifier 22, PID regulator 26, PWM controller 27, TEC driver 28 and Thermal Electric Cooler (TEC) 29.Temperature sensor 21 and Thermal Electric Cooler (TEC) 29 are all attached on the semiconductor laser, being respectively applied for the temperature and the noise spectra of semiconductor lasers that detect semiconductor laser freezes, heats, make to keep the semiconductor laser temperature stabilization, thereby improve the performance of Raman fiber amplifier.
Constant current source 23 provides constant working current for temperature sensor 21, temperature sensor 21 is that voltage (through amplifying) send voltage comparator 25 1 ends with the temperature transition of the semiconductor laser of collection, the setting voltage that this voltage and reference voltage are provided with circuit 24 and provide is provided voltage comparator 25, obtains difference and also send deviation voltage amplifier 22 to amplify.Voltage difference after 26 pairs of amplifications of PID regulator carries out ratio-integration-differential to be regulated, calculate controlled quentity controlled variable by pid control algorithm, the high level of i.e. representative output square wave, the square wave that changes with this controlled quentity controlled variable by PWM controller 27 output duty cycles then, output square wave are again through the refrigeration of TEC driver (as being made of metal-oxide-semiconductor) driving TEC and heat.
In graphic display unit, made full use of the advantage that PID regulates, constantly regulate controlled quentity controlled variable automatically so that controlled laser temperature towards the equilibrium state transition of setting, reaches the stable dynamic balance state in the control accuracy scope at last according to pre-set control law.
Referring to Fig. 3, utilize the Raman fiber amplifier temperature control equipment of temperature-sensitive bridge diagram design shown in the figure.Comprise the temperature-sensitive bridge diagram 31 that connects and composes by resistance R 1, R2, R3 and thermistor Rt, differential mode amplifying circuit 32, PID circuit 33, PWM controller 34, TEC driving circuit 35 and semiconductor cooler 36.Thermistor Rt wherein is attached on the laser instrument LD, and semiconductor cooler 36 is also attached on the laser instrument LD.
During thermal equilibrium, refrigerator 36 is adjusted the temperature of thermistor Rt, bridge diagram 31 is in equilibrium state (V1=V2), the constant magnitude of voltage Vo of PID circuit 33 outputs, PWM controller output square wave, refrigerator 36 is worked under a constant electric current, be used to compensate the rising of the heat sink temperature that the LD injection current causes, thereby keep the constant of chip of laser temperature.
When thermistor Rt detects the heat sink temperature rising, the Rt resistance descends, the equilibrium state of temperature-sensitive bridge diagram 31 is broken, provide an error signal (V1-V2), this error signal (V3) after amplifying causes that PID circuit output voltage Vo rises, the square wave that changes through PWM controller output duty cycle, by increasing forward refrigeration electric current, thereby heat sink temperature is descended, along with the rising of Rt resistance, the gap of V2 and V1 reduces, until V2=V1, electric bridge recovery heat balance, LD also returns to original temperature.
In like manner, when the LD temperature descends, the PWM controller can reduce forward refrigeration electric current and work in design temperature to keep LD, when the LD temperature is very low, the square wave that PWM controller output duty cycle changes, oppositely heat electric current by increasing, improve the heat sink temperature of LD, make LD recover normal duty.
Said process fill variation that part considered environment temperature to laser stability can influence, promptly temperature control equipment can be controlled refrigeration and can control again and heat.
Semiconductor cooler TEC possesses refrigeration and the ability that heats simultaneously, but it must be real two-way requiring PWM controller and TEC driver, can provide forward refrigeration electric current can provide again and oppositely heat electric current, and make by the transition of controlling temperature from the cold junction to the hot junction and do not have the dead band.
Referring to Fig. 4, according to the physical circuit of the structural design of device shown in Figure 3.Comprise the error measure circuit, error amplifying circuit, PID regulating circuit and PWM controller and TEC driving circuit.
The temperature-sensitive bridge diagram that is connected and composed by resistance R 1, R2, R3 and thermistor Rt is used for error measure, operational amplifier U1C, U1D and peripheral cell thereof connect and compose error amplifying circuit, operational amplifier U2A, U2B, U2C and peripheral cell thereof connect and compose the PID regulating circuit, the PWM controller then adopts integrated LTC1923 (also can adopt ADN8830, pwm chips such as DRV594), four metal-oxide-semiconductors (WOSFET P and WOSFET N) and peripheral cell thereof connect and compose the driving circuit of TEC.
Gather the laser tube core temperature invest on the TEC and be converted to voltage difference by negative tempperature coefficient thermistor Rt by the temperature-sensitive bridge diagram, this error signal that produces is through the differential mode amplification with by PID circuit output control voltage, offer the PWM controller again, the PWM controller changes the dutycycle of output square wave, and drive the TEC refrigeration, heat, come the temperature of stabilized lasers diode.
The feedback control loop of temperature control equipment is made of high stability, low noise PID corrective network, can change the system responses characteristic by adjusting pid parameter.The PWM controller is the control core of temperature control equipment, and its output waveform dutycycle reaches as high as 96%, and another extreme lowest duty cycle can reach 0%.
The driving circuit of TEC adopts " H " bridge circuit (adopting the switching regulator type of drive that power consumption is little, efficient is high), and left and right two arms that are somebody's turn to do " H " bridge circuit are connected and composed by the metal-oxide-semiconductor (or Darlington transistor) of two complementations respectively.Because requiring provides bidirectional current for TEC: a polarity electric current is used for refrigeration, and another polarity electric current is used to heat, and drives by adopting " H bridge " formula circuit to obtain bidirectional current with regard to available unipolarity power supply.When the voltage on each arm of " H " bridge circuit equated, bridge was in equilibrium state, and then no current flows into TEC.
PWM controller LTC1923 is that (characteristic comprises high efficiency IC controller: the electric current soft start that control starts; Can reduce the output conversion ratio control of system noise; Difference current sensing and voltage amplifier, and the auxiliary circuit that can protect laser instrument and provide redundant system to monitor.It is adjustable/and the synclator frequency can reduce filter element size and system noise), be integrated with all necessary control circuits and 2 groups of complementary output drivers, so that drive " H " bridge, for TEC provides bidirectional current.The set-point degree of stability of temperature can reach 0.1 ℃, and modified can reach 0.01 ℃.
The left arm of " H " bridge is made up of MOSFET P, the MOSFET N that two complementary signals drive among the figure, the right arm of " H " bridge also is made up of MOSFET P, the MOSFET N that two complementary signals drive, and the driving phase place of MOSFET P, MOSFET N on the MOSFET P on the right arm, the driving phase place of MOSFET N and the corresponding left arm is opposite.Each end of " H " bridge drives a low-pass filter L, and this wave filter can effectively be restrained the filtering ripple of switching tube.
The temperature control equipment of Raman fiber amplifier of the present utility model, based on the PWM controlling Design, the temperature of noise spectra of semiconductor lasers is carried out accurately effectively control, thereby semiconductor laser can reliablely and stablely be worked in desired temperature controlling range.This optimal design can prevent that the peak of the emission wavelength of semiconductor laser from moving to the long wave direction, thereby the output wavelength and the output power of laser instrument have been stablized, make the light signal after the amplification have better gain characteristic, improved the noisiness under the high-gain situation, amplify in the real broadband of realizing, thereby given full play to the advantage of Raman fiber amplifier.
Claims (6)
1. the temperature control equipment of a Raman fiber amplifier, comprise the laser temperature measuring unit, the temperature inversion unit, measure amplifying unit, proportional integral derivative controller, the driver of semiconductor cooler and semiconductor cooler, laser temperature measuring unit and semiconductor cooler are attached on the laser instrument in the described Raman fiber amplifier, it is characterized in that: also comprise a Pwm controller, the Pwm controller input end connects the output terminal of described proportional integral derivative controller, and the Pwm controller output terminal is connected with the input end of the driver of described semiconductor cooler.
2. device according to claim 1, it is characterized in that: described laser temperature measuring unit and temperature inversion unit comprise a temperature sensor, constant-current source circuit, reference voltage is provided with a circuit and a voltage comparator, constant-current source circuit is connected with this temperature sensor, the output terminal of temperature sensor connects voltage comparator one input end, reference voltage is provided with another input end of the output terminal connection voltage comparator of circuit, voltage comparator output temperature voltage of transformation, temperature sensor is attached on the described laser instrument.
3. device according to claim 1, it is characterized in that: described laser temperature measuring unit and temperature inversion unit connect into the temperature-sensitive bridge diagram by first resistance, second resistance, the 3rd resistance and a thermistor and constitute, thermistor is attached on the described laser instrument, and output error signal is delivered to described measurement amplifying unit during temperature-sensitive bridge diagram out-of-balance condition.
4. device according to claim 1 is characterized in that: described measurement amplifying unit is a differential mode amplifier, is connected and composed by two-stage calculation amplifier, the error signal of temperature inversion unit output is carried out differential mode amplify.
5. device according to claim 1 is characterized in that: described Pwm controller adopts the integrated pwm chip that comprises LTC1923, ADN8830, DRV594.
6. device according to claim 1, it is characterized in that: the driver of described semiconductor cooler adopts " H " bridge circuit, each is connected into the left and right arms of this " H " bridge by the metal-oxide-semiconductor of two complementations, the serial connection point of two metal-oxide-semiconductors drives described semiconductor cooler by a low-pass filter respectively on the left and right arms, and the left and right arms that is somebody's turn to do " H " bridge is respectively described semiconductor cooler provides forward current and inverse current.
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| CN 200420072621 CN2713524Y (en) | 2004-06-25 | 2004-06-25 | Temperature controller for Raman optical fiber amplifier |
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| CN108572035A (en) * | 2018-04-25 | 2018-09-25 | 京东方科技集团股份有限公司 | A kind of temperature control device and its control method, display device |
| CN109038185A (en) * | 2018-10-08 | 2018-12-18 | 杭州万隆光电设备股份有限公司 | Band TEC integrated coaxial type single fiber double wave laser BOSA component |
| CN112731985A (en) * | 2020-12-24 | 2021-04-30 | 中国工程物理研究院核物理与化学研究所 | Dustproof and moistureproof device for regulating and controlling environment temperature of precision instrument with high precision |
| CN112731985B (en) * | 2020-12-24 | 2022-06-07 | 中国工程物理研究院核物理与化学研究所 | Dustproof and moistureproof device for regulating and controlling environment temperature of precision instrument with high precision |
| CN116048156A (en) * | 2023-01-10 | 2023-05-02 | 江苏三联生物工程股份有限公司 | Bidirectional temperature control system of electrochemiluminescence detection device |
| CN116048156B (en) * | 2023-01-10 | 2024-01-30 | 江苏三联生物工程股份有限公司 | Bidirectional temperature control system of electrochemiluminescence detection device |
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