CN103208738A - Semiconductor laser device driving device - Google Patents
Semiconductor laser device driving device Download PDFInfo
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- CN103208738A CN103208738A CN2013101350493A CN201310135049A CN103208738A CN 103208738 A CN103208738 A CN 103208738A CN 2013101350493 A CN2013101350493 A CN 2013101350493A CN 201310135049 A CN201310135049 A CN 201310135049A CN 103208738 A CN103208738 A CN 103208738A
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Abstract
The invention discloses a semiconductor laser device driving device which is characterized by comprising a constant temperature control module and a power driving module. The constant temperature control module comprises a constant temperature control chip, a thermistor, a differential amplification circuit, a proportional-integral-derivative (PID) controller, an H-bridge driving circuit and an LC filter circuit. The power driving module comprises a power source driving chip, a laser diode and a digital rheostat. The semiconductor laser device driving device can fast and accurately drive the power of a laser device by adopting a closed-loop power control system, the PID system and the H-bridge driving circuit and can meet the requirements for constant temperature in the laser device.
Description
Technical field
The present invention relates to semiconductor laser field, relate in particular to a kind of semiconductor laser drive.
Background technology
Stable laser as signal source, requires to send high stability, light signal that luminous power is adjustable in optical fiber sensing system.The performance of laser not only can have influence on the stability of optical fiber sensing system integral body, to measuring aspects such as sensitivity accuracy certain influence is arranged simultaneously.At present, optical fiber sensing system adopts semiconductor laser more, and its volume is little, and power consumption is few, and output wavelength can directly be connected with monomode fiber, very is adapted at using in the optical fiber sensing system.
According to the structure of semiconductor laser, generally adopt the current drives laser.Should there be minimum electronic noise and high as far as possible stability in the laser diode current source.Widening of the increase of laser output noise and output wavelength can both obviously cause the fluctuating of electric current, and the current noise level increases gradually with the increase of the maximum fan-out capability of driver.So current source must be complementary with the laser that uses.Also should consider the temperature coefficient in laser diode current source, the typical laboratory ambient temperature fluctuating number of degrees, these all can cause the fluctuating of source current.
Usually the current source of laser is worked in two ways: a kind of is the constant current working method, and another kind is the constant optical power working method.In the constant current working method, by the electricity feedback control loop, directly provide effective control of drive current level, obtain the stability of minimum current deviation and the highest LD output thus.When the temperature of LD is also controlled, can produce best effects.In the constant optical power working method, by being arranged on the optical output power of the photoelectric diode monitoring laser device of exiting surface behind the laser, the output of laser diode is fed to drive circuit, when optical output power descends, drive current increases, vice versa, and remaining optical output power is a steady state value.The factor that influences stabilized intensity has aging, extraneous veiling glare, ambient temperature and the light source self of the fluctuation of light source voltage or electric current, circuit element aging etc.Control for light source light power, the method that generally adopts is to provide electric current by precision constant current source at present, carry out temperature control with refrigerator simultaneously, thus the stabilized light source Output optical power, and this scheme control precision is low, response speed is slow, very flexible, long-time stability are poor.
Summary of the invention
The objective of the invention is to propose a kind of semiconductor laser drive, improved response speed than existing drive unit, promoted the stability of control precision and laser internal temperature.
For reaching this purpose, the present invention by the following technical solutions:
A kind of semiconductor laser drive comprises: thermostatic control module and power driver module;
Described thermostatic control module comprises: thermostatic control chip, thermistor, differential amplifier circuit, proportional-integral-differential (Proportional-Integral-Derivative, PID) controller, H bridge drive circuit and LC filter circuit;
Described thermistor is arranged in the described laser, be connected with described thermostatic control chip by laser pin, described differential amplifier circuit compares back generation deviation voltage with described the thermistor voltage that produces and the sign voltage of presetting and described deviation voltage is amplified, regulate the phase delay of described thermostatic control module simultaneously by described PID controller, the output of described H bridge drive circuit is connected with the semiconductor cooler in the laser, to control the temperature in the described semiconductor cooler adjusting laser, described LC filter circuit is used for the switching frequency of filtering H bridge drive circuit with stable output;
Described power driver module comprises: light source drives chip, laser diode and digital varistor, described laser diode is arranged at laser inside, described light source drives chip I BIAS pin and is connected with described laser diode is anodal, the minus earth of described laser diode, the IBMON pin that described light source drives chip is connected to constitute closed loop power control system with the PSET pin, one end of described digital varistor is connected with described PSET pin, other end ground connection is used for the output current of described light source driving chip is adjusted.
Described thermistor is the thermistor of negative temperature coefficient.
Described differential amplifier circuit is made up of amplifier and the outside peripheral resistance of described thermostatic control chip internal.
Described H bridge drive circuit is made up of metal-oxide-semiconductor field effect transistor.
MODE pin and ALS pin that described light source drives chip connect and compose independent drive pattern.
The present invention is by adopting closed loop power control system, PID system and H bridge drive circuit, drive laser power that can be fast and accurately, and can satisfy the constant requirement of laser internal temperature.
Description of drawings
Fig. 1 is the structural representation of the thermostatic control module in the semiconductor laser drive that provides of the embodiment of the invention.
Fig. 2 is the structural representation of the power driver module in the semiconductor laser drive that provides of the embodiment of the invention.
Embodiment
Further specify technical scheme of the present invention below in conjunction with accompanying drawing and by embodiment.
Fig. 1 is the structural representation of the thermostatic control module in the semiconductor laser drive that provides of the embodiment of the invention.
Described thermostatic control module comprises: thermostatic control chip 1, and thermistor 2, differential amplifier circuit 3, (Proportional-Integral-Derivative, PID) controller 4, H bridge drive circuit 5 and LC filter circuit 6 for proportional-integral-differential.
In laser inside one thermistor 2 is set, it can measure the temperature of laser, and for accuracy and the stability that improves temperature, thermistor 2 should be positioned as close to the semiconductor cooler in the laser.What described thermostatic control module adopted is the thermistor of negative temperature coefficient, and resistance diminishes along with the rising of temperature.At the peripheral resistance of described thermostatic control chip 1 disposed outside, the amplifier formation differential amplifier circuit 3 in conjunction with chip internal amplifies after it can compare the voltage of real-time voltage and preset temperature point in proportion.Compensating network adopts hardware PID(ratio-integration-differential) 4 controls, to be formed by amplifier, resistance, electric capacity, its advantage is the reliability height.The effect that ratio is regulated is the deviation of reaction system in proportion, in case there is deviation in system, ratio is regulated to produce immediately and done in order to reduce system deviation.Proportional action can the quickening system be regulated greatly, but excessive proportionality coefficient can arrive the instability that causes system.The effect that integration is regulated is to make system eliminate steady-state error, improves the accuracy of system, but also can cause the response of system slack-off simultaneously.The effect that differential is regulated is the rate of change of reaction system deviation signal, can predict the variation tendency of deviation signal, therefore can produce leading control action, changes the dynamic property of system.The hyperharmonic of should noting compromising in the practical adjustments process is the problem of response fast, when overshoot is serious, should suitably reduces proportionality coefficient, increase the time of integration, the derivative time of reducing, and when response speed was slow, control method was with top opposite.The H bridge drive circuit that described H bridge drive circuit 5 is made up of four power MOSFETs.In order to improve the stability of semiconductor refrigerating actuator temperature in the laser, the ripple current that flows through described semiconductor cooler should be as much as possible little, must add the switching frequency of LC filter circuit 6 filtering PWM to reach the purpose of stablizing described semiconductor cooler voltage after the H bridge.Described thermostatic control chip 1 can be selected ADN8831 for use.
Fig. 2 is the structural representation of the power driver module in the semiconductor laser drive that provides of the embodiment of the invention.
Described power driver module comprises: light source drives chip 7, laser diode 11 and digital varistor 14, described light source drives chip 7 can select ADN2830 for use, ADN2830 is a kind of for the average power controller that the continuous wave laser of fibre system is controlled, this chip has reduced quantity, printed circuit board (pcb) area and the system cost of discrete device, and does not sacrifice any function.At first described power control module adopts independent control model, and the MODE pin 8 among the ADN2830 is connected with ALS pin 9, independently laser power is controlled.Secondly, the IBIAS pin one 0 among the ADN2830 is connected with the positive pole of laser diode 11, the minus earth of described laser diode 11, thus by the electric current that is biased to that ADN2830 produces the amplitude of laser power is controlled.Then, the IBMON pin one 2 of ADN2830 is connected with PSET pin one 3, constitute closed loop power control system, one end of last described digital varistor is connected with described PSET pin, other end ground connection, adjust by 14 pairs of output currents of digital varistor, thereby reach the purpose of controlling power output.
The present invention is by adopting closed loop power control system, PID system and H bridge drive circuit, drive laser power that can be fast and accurately, and can satisfy the constant requirement of laser internal temperature.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (5)
1. a semiconductor laser drive is characterized in that, comprising: thermostatic control module and power driver module;
Described thermostatic control module comprises: thermostatic control chip, thermistor, differential amplifier circuit, proportional-integral-differential (Proportional-Integral-Derivative, PID) controller, H bridge drive circuit and LC filter circuit;
Described thermistor is arranged in the described laser, be connected with described thermostatic control chip by laser pin, described differential amplifier circuit compares back generation deviation voltage with described the thermistor voltage that produces and the sign voltage of presetting and described deviation voltage is amplified, regulate the phase delay of described thermostatic control module simultaneously by described PID controller, the output of described H bridge drive circuit is connected with the semiconductor cooler in the laser, to control the temperature in the described semiconductor cooler adjusting laser, described LC filter circuit is used for the switching frequency of filtering H bridge drive circuit with stable output;
Described power driver module comprises: light source drives chip, laser diode and digital varistor, described laser diode is arranged at laser inside, described light source drives chip I BIAS pin and is connected with described laser diode is anodal, the minus earth of described laser diode, the IBMON pin that described light source drives chip is connected to constitute closed loop power control system with the PSET pin, one end of described digital varistor is connected with described PSET pin, other end ground connection is used for the output current of described light source driving chip is adjusted.
2. device as claimed in claim 1 is characterized in that, described thermistor is the thermistor of negative temperature coefficient.
3. device as claimed in claim 1 is characterized in that, described differential amplifier circuit is made up of amplifier and the outside peripheral resistance of described thermostatic control chip internal.
4. device as claimed in claim 1 is characterized in that, described H bridge drive circuit is made up of metal-oxide-semiconductor field effect transistor.
5. device as claimed in claim 1 is characterized in that, MODE pin and ALS pin that described light source drives chip connect and compose independent drive pattern.
Priority Applications (1)
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| CN2013101350493A CN103208738A (en) | 2013-04-18 | 2013-04-18 | Semiconductor laser device driving device |
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| CN2013101350493A CN103208738A (en) | 2013-04-18 | 2013-04-18 | Semiconductor laser device driving device |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944061A (en) * | 2014-04-14 | 2014-07-23 | 浙江中欣动力测控技术有限公司 | Driving and control circuit of semiconductor laser unit |
| CN104319622A (en) * | 2014-11-19 | 2015-01-28 | 天津光电通信技术有限公司 | Small driving circuit of continuous light output laser device |
| CN105406347A (en) * | 2015-11-19 | 2016-03-16 | 江汉大学 | Laser device with high stability |
| CN105843285A (en) * | 2016-05-24 | 2016-08-10 | 天津倍肯生物科技有限公司 | Laser driver circuit having constant wavelength and power |
| CN108023271A (en) * | 2017-12-21 | 2018-05-11 | 太原理工大学 | A kind of Wavelength tunable laser based on FPGA |
| CN109193332A (en) * | 2018-08-24 | 2019-01-11 | 武汉光迅科技股份有限公司 | A kind of compensation method of laser output frequency and corresponding optical module |
| CN109256674A (en) * | 2018-10-31 | 2019-01-22 | 云南大学 | A kind of small-sized driving circuit of semiconductor laser of Information technical field application |
| CN109326956A (en) * | 2018-11-19 | 2019-02-12 | 深圳市大族锐波传感科技有限公司 | A kind of laser driving system and semiconductor laser module |
| CN110224295A (en) * | 2019-04-28 | 2019-09-10 | 中国计量科学研究院 | A kind of semiconductor laser drive and method |
| CN113342091A (en) * | 2021-07-13 | 2021-09-03 | 深圳市微特精密科技股份有限公司 | Intelligent temperature control device suitable for chip thermal management |
| CN114545996A (en) * | 2022-03-10 | 2022-05-27 | 中国科学院半导体研究所 | Temperature control circuit of semiconductor laser |
| CN115685812A (en) * | 2022-09-30 | 2023-02-03 | 深圳清华大学研究院 | Multifunctional SIP packaging driving chip of high-power laser |
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| CN201967200U (en) * | 2010-12-29 | 2011-09-07 | 上海亨通光电科技有限公司 | Super radiation light-emitting diode driving circuit with temperature adjusting function |
| CN203277961U (en) * | 2013-04-18 | 2013-11-06 | 北京航天易联科技发展有限公司 | Semiconductor laser device drive apparatus |
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Patent Citations (4)
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| US20070237195A1 (en) * | 2006-04-07 | 2007-10-11 | Shinko Electric Industries Co., Ltd. | Light Source, Method for Controlling Light Source, and Method for Replacing Light Source |
| CN101174758A (en) * | 2007-10-30 | 2008-05-07 | 武汉电信器件有限公司 | Automatic control system of tunable laser based on lock wave |
| CN201967200U (en) * | 2010-12-29 | 2011-09-07 | 上海亨通光电科技有限公司 | Super radiation light-emitting diode driving circuit with temperature adjusting function |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944061A (en) * | 2014-04-14 | 2014-07-23 | 浙江中欣动力测控技术有限公司 | Driving and control circuit of semiconductor laser unit |
| CN103944061B (en) * | 2014-04-14 | 2016-10-12 | 浙江中欣动力测控技术有限公司 | A kind of driving control circuit of semiconductor laser |
| CN104319622A (en) * | 2014-11-19 | 2015-01-28 | 天津光电通信技术有限公司 | Small driving circuit of continuous light output laser device |
| CN105406347A (en) * | 2015-11-19 | 2016-03-16 | 江汉大学 | Laser device with high stability |
| CN105843285A (en) * | 2016-05-24 | 2016-08-10 | 天津倍肯生物科技有限公司 | Laser driver circuit having constant wavelength and power |
| CN105843285B (en) * | 2016-05-24 | 2017-12-26 | 天津倍肯生物科技有限公司 | A kind of laser driver circuit with constant wavelength and power |
| CN108023271A (en) * | 2017-12-21 | 2018-05-11 | 太原理工大学 | A kind of Wavelength tunable laser based on FPGA |
| CN108023271B (en) * | 2017-12-21 | 2020-01-03 | 太原理工大学 | Wavelength tunable laser based on FPGA |
| CN109193332A (en) * | 2018-08-24 | 2019-01-11 | 武汉光迅科技股份有限公司 | A kind of compensation method of laser output frequency and corresponding optical module |
| CN109256674A (en) * | 2018-10-31 | 2019-01-22 | 云南大学 | A kind of small-sized driving circuit of semiconductor laser of Information technical field application |
| CN109326956A (en) * | 2018-11-19 | 2019-02-12 | 深圳市大族锐波传感科技有限公司 | A kind of laser driving system and semiconductor laser module |
| CN110224295A (en) * | 2019-04-28 | 2019-09-10 | 中国计量科学研究院 | A kind of semiconductor laser drive and method |
| CN113342091A (en) * | 2021-07-13 | 2021-09-03 | 深圳市微特精密科技股份有限公司 | Intelligent temperature control device suitable for chip thermal management |
| CN114545996A (en) * | 2022-03-10 | 2022-05-27 | 中国科学院半导体研究所 | Temperature control circuit of semiconductor laser |
| CN115685812A (en) * | 2022-09-30 | 2023-02-03 | 深圳清华大学研究院 | Multifunctional SIP packaging driving chip of high-power laser |
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Application publication date: 20130717 |