CN204835207U - Semiconductor laser power modulation drive circuit - Google Patents
Semiconductor laser power modulation drive circuit Download PDFInfo
- Publication number
- CN204835207U CN204835207U CN201520608571.3U CN201520608571U CN204835207U CN 204835207 U CN204835207 U CN 204835207U CN 201520608571 U CN201520608571 U CN 201520608571U CN 204835207 U CN204835207 U CN 204835207U
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- operational amplifier
- sampling resistor
- drive circuit
- voltage
- semiconductor laser
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Abstract
The utility model discloses a semiconductor laser power modulation drive circuit, reach the current sample resistance R4 that is shaded from the sun including analog switch K1, an operational amplifier A1, loop building -out capacitor C1, divider resistance R1 and R2, the 2nd operational amplifier A2, laser instrument LD, NPN triode Q1, modulation current sample resistance R3, the pipe PD that is shaded from the sun. The utility model discloses an analog switch K1 carries out pulse width modulation to reference voltage vref, and the output waveform border is precipitous, and the range is accurate with the width to the hardware closed -loop control circuit that combines back level operational amplifier to constitute, the luminous power is exported to control laser instrument that can be accurate.
Description
Technical field
The utility model relates to semiconductor laser field, is specifically related to a kind of semiconductor laser power modulation drive circuit.
Background technology
At present, for the laser driver of the occasions such as laser level, stage laser, medical light source, laser designation, usually to the requirement that function and performance have some special, first, when working in wider temperature range, its Output optical power will be aspired for stability constant, therefore needs to adopt Automatic optical power control (APC) technology, eliminates variations in temperature to the impact of luminous power.The second, control optical output power of laser size according to the size of modulation signal duty ratio, and require laser output power and modulation signal linear, error is little, and namely the power modulation linearity is high, and precision is high.
But existing APC technology adopts the components and parts such as triode, voltage-stabiliser tube to make simple power closed loop usually, thus control precision is not high, and still affects by working temperature, thus cannot meet instructions for use.
It is low that prior art is used for the current source precision of drive laser, easy overcurrent, significantly affects laser useful life.
In addition, the modulation signal waveform edge that existing power modulation technique is formed is slow, causes the problems such as the linearity is not high, and modulation accuracy is low.
Summary of the invention
The purpose of this utility model is to propose a kind of semiconductor laser power modulation drive circuit, to improve the linearity of power control accuracy, bring to power modulation, increases current-limiting protection to improve laser useful life.
The technical solution adopted in the utility model is: a kind of semiconductor laser power modulation drive circuit, comprises analog switch K1, the first operational amplifier A 1, loop compensation electric capacity C1, divider resistance R1 and R2, the second operational amplifier A 2, laser LD, NPN triode Q1, modulated current sampling resistor R3, backlight pipe PD and back facet current sampling resistor R4;
The normally opened contact NO of described analog switch K1 is connected with reference voltage V ref, and normally-closed contact NC is connected with power supply ground GND, and control end IN is connected with PWM modulation signal, and common port COM outputs signal the in-phase input end that Vcnt sends into the first operational amplifier;
Described backlight pipe PD negative electrode is connected with positive source VCC, anode and back facet current sampling resistor R4
Meet power supply ground GND, back facet current Ipd after series connection and be transformed to backlight voltage P_FB through sampling resistor, and send into the inverting input of the first operational amplifier A 1; Output loop building-out capacitor in parallel with between the inverting input C1 of the first operational amplifier A 1;
Described first operational amplifier A 1 output is connected to divider resistance R1 and R2, connects after dividing potential drop
To the in-phase input end of the second operational amplifier A 2; The output of the second operational amplifier A 2 is connected to the base stage of NPN triode, the emitter of triode meets power supply ground GND after connecting with modulated current sampling resistor R3, modulated current Imod is transformed to modulation voltage I_FB through sampling resistor, and sends into the inverting input of the second operational amplifier;
The anode of described laser LD is connected with positive source VCC, the current collection of negative electrode and NPN triode
Extremely connected.
Further, described analog switch K1 is the analog switch K1 for carrying out pulse-width modulation to reference voltage V ref.
Further, described second operational amplifier A 2 is and NPN triode, and modulated current sampling resistor R3 forms voltage controlled current source circuit, by adjusting the in-phase input end voltage of the second operational amplifier A 2, controls the modulated current Imod size that laser LD flows through.
Further, described first operational amplifier A 1 is the first operational amplifier A 1 for forming constant-power control circuit.
Further, described loop compensation electric capacity C1 is the delay for offsetting the first operational amplifier feedback loop, improves loop stability, avoids self-oscillatory loop compensation electric capacity C1 occurs.
Advantage of the present utility model:
The utility model adopts analog switch K1 to modulate reference voltage V ref, and output waveform edge is precipitous, and amplitude and width precisely, and control in conjunction with the hardware closed-loop that rear class operational amplifier is formed, and accurately can control optical output power of laser;
Maximum Output optical power Pout (max) under reference voltage V ref decision laser continuous mode, the duty cycle range of modulation signal PWM is 0-100%, optical output power of laser linear continuous variation between 0-Pout (max) can be controlled, be user-friendly to;
Laser adopts driven with current sources, has current-limiting protection mechanism, can extend laser useful life.Current source reference voltage is low, and sampling resistor is low in energy consumption, whole system low in energy consumption;
Circuit structure is succinct, and all materials all adopt conventional components and parts, and ample supply and prompt delivery, cost are low.
Except object described above, feature and advantage, the utility model also has other object, feature and advantage.Below with reference to figure, the utility model is described in further detail.
Accompanying drawing explanation
The accompanying drawing forming a application's part is used to provide further understanding of the present utility model, and schematic description and description of the present utility model, for explaining the utility model, is not formed improper restriction of the present utility model.
Fig. 1 is the schematic diagram of the utility model embodiment.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
With reference to figure 1, a kind of semiconductor laser power modulation drive circuit as shown in Figure 1, comprises analog switch K1, the first operational amplifier A 1, loop compensation electric capacity C1, divider resistance R1 and R2, the second operational amplifier A 2, laser LD, NPN triode Q1, modulated current sampling resistor R3, backlight pipe PD and back facet current sampling resistor R4;
The normally opened contact NO of described analog switch K1 is connected with reference voltage V ref, and normally-closed contact NC is connected with power supply ground GND, and control end IN is connected with PWM modulation signal, and common port COM outputs signal the in-phase input end that Vcnt sends into the first operational amplifier;
Described backlight pipe PD negative electrode is connected with positive source VCC, anode and back facet current sampling resistor R4
Meet power supply ground GND, back facet current Ipd after series connection and be transformed to backlight voltage P_FB through sampling resistor, and send into the inverting input of the first operational amplifier A 1; Output loop building-out capacitor in parallel with between the inverting input C1 of the first operational amplifier A 1;
Described first operational amplifier A 1 output is connected to divider resistance R1 and R2, connects after dividing potential drop
To the in-phase input end of the second operational amplifier A 2; The output of the second operational amplifier A 2 is connected to the base stage of NPN triode, the emitter of triode meets power supply ground GND after connecting with modulated current sampling resistor R3, modulated current Imod is transformed to modulation voltage I_FB through sampling resistor, and sends into the inverting input of the second operational amplifier;
The anode of described laser LD is connected with positive source VCC, the current collection of negative electrode and NPN triode
Extremely connected.
Described analog switch K1 is the analog switch K1 for carrying out pulse-width modulation to reference voltage V ref.
Described second operational amplifier A 2 is and NPN triode, and modulated current sampling resistor R3 forms voltage controlled current source circuit, by adjusting the in-phase input end voltage of the second operational amplifier A 2, controls the modulated current Imod size that laser LD flows through.
Described first operational amplifier A 1 is the first operational amplifier A 1 for forming constant-power control circuit.
Described loop compensation electric capacity C1 is the delay for offsetting the first operational amplifier feedback loop, improves loop stability, avoids self-oscillatory loop compensation electric capacity C1 occurs.
Analog switch K1, for carrying out pulse-width modulation to reference voltage V ref, the high level of modulation signal PWM connects normally opened contact NO, output voltage is reference voltage V ref, the low level of PWM connects normally-closed contact NC, output voltage is 0, and the amplitude of the signal Vcnt obtained thus is consistent with reference voltage V ref, and frequency is consistent with duty ratio and modulation signal PWM.Vcnt is as the reference pulse voltage of rear class power limitation control loop.
Second operational amplifier A 2 and NPN triode, modulated current sampling resistor R3 forms voltage controlled current source circuit, by adjusting the in-phase input end voltage of the second operational amplifier A 2, can control the modulated current Imod size that laser LD flows through accurately.
First operational amplifier A 1 is for forming constant-power control circuit, the photoelectric current Ipd that backlight PD detects converts the voltage signal P_FB being proportional to laser LD output intensity to by back facet current sampling resistor R4, the error of the first operational amplifier benchmark voltage Vcnt and feedback voltage P_FB, and according to error size regulation output voltage, after divider resistance R1 and R2, deliver to the in-phase input end of the second operational amplifier, and then regulate laser LD modulated current Imod size, finally reach dynamic equilibrium, thus control laser LD Output optical power in real time.
Loop compensation electric capacity C1, for offsetting the delay of the first operational amplifier feedback loop, improves loop stability, avoids self-oscillation occurs.
Divider resistance R1 and R2 first acts on, and for limiting the maximum input voltage of voltage-controlled current source, preventing because the first operational amplifier A 1 makes modulated current Imod increase sharply because of any unexpected output HIGH voltage and damaging laser LD.
Divider resistance R1 and R2 second acts on, for reducing the second operational amplifier A 2 in-phase end input reference voltage, according to operational amplifier " empty short " principle, in like manner reduce anti-phase input terminal voltage, again from " Ohm's law ", under equal modulated current Imod condition, reduce the value of sampling resistor R3, then can reduce the power consumption on sampling resistor R3, improve power-efficient.
The voltage request of power supply VCC be not less than maximum conduction voltage drop Uce (on) max between laser LD maximum working voltage Uld (on) max and NPN transistor collector and emitter and.
The utility model adopts analog switch K1 to modulate reference voltage V ref, and output waveform edge is precipitous, and amplitude and width precisely, and control in conjunction with the hardware closed-loop that rear class operational amplifier is formed, and optical output power of laser control precision is high;
Maximum Output optical power Pout (max) under reference voltage V ref decision laser continuous mode, the duty cycle range of modulation signal PWM is 0-100%, optical output power of laser linear continuous variation between 0-Pout (max) can be controlled, be user-friendly to;
Laser adopts driven with current sources, has current-limiting protection mechanism, can extend laser useful life.Current source reference voltage is low, and sampling resistor is low in energy consumption, whole system low in energy consumption;
Circuit structure is succinct, and all materials all adopt conventional components and parts, and ample supply and prompt delivery, cost are low.
The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model,
All within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (5)
1. a semiconductor laser power modulation drive circuit, it is characterized in that, comprise analog switch K1, the first operational amplifier A 1, loop compensation electric capacity C1, divider resistance R1 and R2, the second operational amplifier A 2, laser LD, NPN triode Q1, modulated current sampling resistor R3, backlight pipe PD and back facet current sampling resistor R4; The normally opened contact NO of described analog switch K1 is connected with reference voltage V ref, and normally-closed contact NC is connected with power supply ground GND, and control end IN is connected with PWM modulation signal, and common port COM outputs signal the in-phase input end that Vcnt sends into the first operational amplifier A 1; Described backlight pipe PD negative electrode is connected with positive source VCC, and anode meets power supply ground GND, back facet current Ipd and is transformed to backlight voltage P_FB through sampling resistor after connecting with back facet current sampling resistor R4, and sends into the inverting input of the first operational amplifier A 1; Output loop building-out capacitor in parallel with between the inverting input C1 of the first operational amplifier A 1; Described first operational amplifier A 1 output is connected to divider resistance R1 and R2, is connected to the in-phase input end of the second operational amplifier A 2 after dividing potential drop; The output of the second operational amplifier A 2 is connected to the base stage of NPN triode, the emitter of triode meets power supply ground GND after connecting with modulated current sampling resistor R3, modulated current Imod is transformed to modulation voltage I_FB through sampling resistor, and sends into the inverting input of the second operational amplifier A 2; The anode of described laser LD is connected with positive source VCC, and negative electrode is connected with the collector electrode of NPN triode.
2. semiconductor laser power modulation drive circuit according to claim 1, is characterized in that, described analog switch K1 is the analog switch K1 for carrying out pulse-width modulation to reference voltage V ref.
3. semiconductor laser power modulation drive circuit according to claim 1, it is characterized in that, described second operational amplifier A 2 is and NPN triode, modulated current sampling resistor R3 forms voltage controlled current source circuit, by adjusting the in-phase input end voltage of the second operational amplifier A 2, to control the modulated current Imod size that laser LD flows through.
4. semiconductor laser power modulation drive circuit according to claim 1, is characterized in that, described first operational amplifier A 1 is the first operational amplifier A 1 for forming constant-power control circuit.
5. according to the arbitrary described semiconductor laser power modulation drive circuit of claim 1-4, it is characterized in that, described loop compensation electric capacity C1 is the delay for offsetting the first operational amplifier feedback loop, improves loop stability, avoids self-oscillatory loop compensation electric capacity C1 occurs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520608571.3U CN204835207U (en) | 2015-08-13 | 2015-08-13 | Semiconductor laser power modulation drive circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520608571.3U CN204835207U (en) | 2015-08-13 | 2015-08-13 | Semiconductor laser power modulation drive circuit |
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| CN201520608571.3U Expired - Fee Related CN204835207U (en) | 2015-08-13 | 2015-08-13 | Semiconductor laser power modulation drive circuit |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105633776A (en) * | 2015-12-15 | 2016-06-01 | 苏州旭创科技有限公司 | Driving apparatus and driving method for laser, and high-speed optical module |
| CN106020305A (en) * | 2016-05-06 | 2016-10-12 | 科大国盾量子技术股份有限公司 | Voltage-controlled current source circuit and method thereof, and semiconductor laser and bias power supply thereof |
| CN107994874A (en) * | 2017-11-23 | 2018-05-04 | 西安电子科技大学 | IC power consumption compensation circuit |
| CN108923260A (en) * | 2018-08-23 | 2018-11-30 | 武汉英飞华科技有限公司 | A kind of super-radiance light emitting diode wideband light source |
| CN109244826A (en) * | 2018-11-15 | 2019-01-18 | 青岛海信宽带多媒体技术有限公司 | Laser driving circuit and optical module |
| CN111064450A (en) * | 2019-12-11 | 2020-04-24 | 北京航天控制仪器研究所 | Nanosecond SOA drive circuit and control method |
| CN112615676A (en) * | 2020-12-18 | 2021-04-06 | 厦门亿芯源半导体科技有限公司 | High-speed optical transmit-receive integrated chip driving circuit with phase delay compensation function |
| CN113702992A (en) * | 2020-05-23 | 2021-11-26 | 北醒（北京）光子科技有限公司 | Laser detection device |
| CN118145824A (en) * | 2024-03-07 | 2024-06-07 | 北京顺政水环境有限公司 | Sewage treatment system |
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2015
- 2015-08-13 CN CN201520608571.3U patent/CN204835207U/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105633776B (en) * | 2015-12-15 | 2019-04-30 | 苏州旭创科技有限公司 | Driving device, driving method and the high-speed optical module of laser |
| CN105633776A (en) * | 2015-12-15 | 2016-06-01 | 苏州旭创科技有限公司 | Driving apparatus and driving method for laser, and high-speed optical module |
| CN106020305A (en) * | 2016-05-06 | 2016-10-12 | 科大国盾量子技术股份有限公司 | Voltage-controlled current source circuit and method thereof, and semiconductor laser and bias power supply thereof |
| CN106020305B (en) * | 2016-05-06 | 2017-12-12 | 科大国盾量子技术股份有限公司 | Voltage controlled current source circuit and its method, semiconductor laser and its bias supply |
| CN107994874A (en) * | 2017-11-23 | 2018-05-04 | 西安电子科技大学 | IC power consumption compensation circuit |
| CN108923260A (en) * | 2018-08-23 | 2018-11-30 | 武汉英飞华科技有限公司 | A kind of super-radiance light emitting diode wideband light source |
| CN109244826A (en) * | 2018-11-15 | 2019-01-18 | 青岛海信宽带多媒体技术有限公司 | Laser driving circuit and optical module |
| CN111064450A (en) * | 2019-12-11 | 2020-04-24 | 北京航天控制仪器研究所 | Nanosecond SOA drive circuit and control method |
| CN113702992A (en) * | 2020-05-23 | 2021-11-26 | 北醒（北京）光子科技有限公司 | Laser detection device |
| CN112615676A (en) * | 2020-12-18 | 2021-04-06 | 厦门亿芯源半导体科技有限公司 | High-speed optical transmit-receive integrated chip driving circuit with phase delay compensation function |
| CN112615676B (en) * | 2020-12-18 | 2021-10-01 | 厦门亿芯源半导体科技有限公司 | High-speed optical transmit-receive integrated chip driving circuit with phase delay compensation function |
| CN118145824A (en) * | 2024-03-07 | 2024-06-07 | 北京顺政水环境有限公司 | Sewage treatment system |
| CN118145824B (en) * | 2024-03-07 | 2024-08-20 | 北京顺政水环境有限公司 | Sewage treatment system |
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Legal Events
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151202 Termination date: 20200813 |