CN103944061A - Driving and control circuit of semiconductor laser unit - Google Patents
Driving and control circuit of semiconductor laser unit Download PDFInfo
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Abstract
The invention discloses a driving and control circuit of a semiconductor laser unit. The driving and control circuit is characterized in that the input end of a first power operational amplification circuit is connected with the output end of a PID regulating circuit, the output end of the first power operational amplification circuit is respectively connected with the negative pole input end of the first power operational amplification circuit, the positive pole of a semiconductor cooler and one end of a twelfth resistor, the negative pole of the semiconductor cooler is respectively connected with the output end of a second power operational amplification circuit and one end of a thirteenth resistor, the other end of the thirteenth resistor is respectively connected with the negative pole input end of the second power operational amplification circuit and the other end of the twelfth resistor, and the positive pole input end of the second power operational amplification circuit is connected with the positive end of a reference source. The driving and control circuit has the advantages that the first power operational amplification circuit and the second power operational amplification circuit are of H bridge type structures, the function of keeping the stability of internal temperature of the semiconductor laser unit can be achieved, switching frequency interfering noise in output spectra can be reduced, and meanwhile the power dissipation is effectively reduced.
Description
Technical field
The present invention relates to a kind of drive circuit of semiconductor laser, especially a kind of Drive and Control Circuit of semiconductor laser.
Background technology
Semiconductor laser has many outstanding advantages, as compact conformation, efficiency is high, the life-span is long and spectral characteristic is good, therefore be the light source of the field necessity such as optical fiber communication, light exchange, optical storage, optical circulator, optical frequency standard, metering detection, in addition, there is purposes widely at aspects such as laser printing, laser ranging, optical radar, medical diagnosis, atmospheric environment pollution monitorings.At present, external cavity semiconductor laser has become critical component required in coherent optical communication, dense wavelength division multiplexing optical fiber transmission system and broadband integrated services digital network.The performances such as the live width of semiconductor laser, frequency, power have directly affected the accuracy of communication and measuring system.
The temperature-control circuit of semiconductor laser is a core technology point of the drive circuit of semiconductor laser, the temperature fluctuation of semiconductor laser inside has directly affected the stability of Laser output, wherein, the important performance characteristic in semiconductor laser such as centre wavelength, frequency noise and luminous power is more responsive to temperature, and therefore the temperature control of noise spectra of semiconductor lasers is particularly important.Mainly by being set in the inside of semiconductor laser, semiconductor cooler (Thermoelectric Cooler is called for short TEC) keeps the stable of laser internal temperature at present.But, the driver module of semiconductor cooler in the past mainly adopts pulse modulated mode to add that four MOSFET field effect transistor drive semiconductor cooler work, and pulse modulated frequency has directly affected by driving semiconductor cooler work to carry out the temperature accuracy of regulating and controlling, in the time of the less temperature steady-state error of needs, just need to increase pulse modulated frequency, operational environment is caused to adverse effect; MOSFET field effect transistor as switching function needs conducting speed faster, causes device cost increase and device are easily subject to overshoot and damage.
The semiconductor cooler of most is all the inside that is integrated in semiconductor laser, use traditional pulse width modulation (PWM) mode to carry out temperature control, when semiconductor laser bright dipping, easily produce High-frequency Interference noise, affect the use of semiconductor cooler, although used lc circuit or PID(ratio, integration, differential in side circuit) filter circuit such as regulating circuit, effect is still not ideal enough.
Summary of the invention
Technical problem to be solved by this invention is to provide the lower and accurate power-adjustable laser of the temperature control Drive and Control Circuit of a kind of interference noise.
The present invention solves the problems of the technologies described above adopted technical scheme: a kind of Drive and Control Circuit of semiconductor laser, comprise adjustable temperature control circuit and adjustable constant-flow circuit, described adjustable temperature control circuit comprises temperature sensing circuit, PID regulating circuit, drive circuit and semiconductor cooler, described drive circuit comprises the first Power arithmetic amplifying circuit, the second Power arithmetic amplifying circuit, the 12 resistance and the 13 resistance, the input of the first described Power arithmetic amplifying circuit is connected with the output of described PID regulating circuit, the output of the first described Power arithmetic amplifying circuit respectively with the negative input of described the first Power arithmetic amplifying circuit, the positive pole of described semiconductor cooler is connected with one end of the 12 described resistance, the negative pole of described semiconductor cooler is connected with one end of the output of described the second Power arithmetic amplifying circuit and described the 13 resistance respectively, the other end of the 13 described resistance is connected with the other end of the negative input of described the second Power arithmetic amplifying circuit and described the 12 resistance respectively, described second electrode input end of Power arithmetic amplifying circuit and the anode of reference power source are connected.
The first described Power arithmetic amplifying circuit comprises the first power operational amplifier and the tenth resistance, the second described Power arithmetic amplifying circuit comprises the second power operational amplifier and the 11 resistance, the first described power operational amplifier and the second described power operational amplifier are LT1970 power operational amplifier, the electrode input end of the first described power operational amplifier is connected with the output of described PID regulating circuit, the negative input of the first described power operational amplifier respectively with one end of described the tenth resistance, the positive pole of described semiconductor cooler, the SENSE of the FILTER pin of the first described power operational amplifier and the first described power operational amplifier
-pin is connected, the V of the first described power operational amplifier
eEthe V of pin and described the first power operational amplifier
-pin is connected, the V of the first described power operational amplifier
-connect-5V of pin voltage, the COMMON pin ground connection of the first described power operational amplifier, the output of the first described power operational amplifier respectively with the SENSE of the other end of described the tenth resistance and described the first power operational amplifier
+pin is connected, the VC of the first described power operational amplifier
sNKpin respectively with the VC of the anode of reference power source and described the first power operational amplifier
sRCpin is connected, connect+5V of the VCC pin voltage of the first described power operational amplifier, the VCC pin of the first described power operational amplifier respectively with the V of the ENABLE pin of described the first power operational amplifier and described the first power operational amplifier
+pin is connected, the described electrode input end of the second power operational amplifier and the anode of reference power source are connected, the negative input of the second described power operational amplifier is connected with the other end of the other end of described the 12 resistance and described the 13 resistance respectively, the V of the second described power operational amplifier
eEthe V of pin and described the second power operational amplifier
-pin is connected, the V of the second described power operational amplifier
-connect-5V of pin voltage, the COMMON pin ground connection of the second described power operational amplifier, the FILTER pin of the second described power operational amplifier respectively with the SENSE of one end of the negative pole of described semiconductor cooler, described the 11 resistance and described the second power operational amplifier
-pin is connected, the output of the second described power operational amplifier respectively with the other end of described the 11 resistance and described SENSE
+pin is connected, the VC of the second described power operational amplifier
sNKpin respectively with the VC of the anode of reference power source and described the second power operational amplifier
sRCpin is connected, connect+5V of the VCC pin voltage of the second described power operational amplifier, the VCC pin of the second described power operational amplifier respectively with the V of the ENABLE pin of described the second power operational amplifier and described the second power operational amplifier
+pin is connected.LT1970 power operational amplifier is linear power amplifier chip, and itself has current-limiting function.
The positive pole of described semiconductor cooler is provided with the first clamp circuit, the negative pole of described semiconductor cooler is provided with the second clamp circuit, the first described clamp circuit comprises the first Schottky diode and the second Schottky diode, the second described clamp circuit comprises the 3rd Schottky diode and the 4th Schottky diode, connect+5V of the negative pole voltage of the first described Schottky diode, the positive pole of the first described Schottky diode is connected with the positive pole of the negative pole of described the second Schottky diode and described semiconductor cooler respectively, connect-5V of the positive pole voltage of the second described Schottky diode, connect+5V of the negative pole voltage of the 3rd described Schottky diode, the positive pole of the 3rd described Schottky diode is connected with the negative pole of the negative pole of described the 4th Schottky diode and described semiconductor cooler respectively, connect-5V of the positive pole voltage of the 4th described Schottky diode.The first clamp circuit and the second clamp circuit can be protected the reaction electromotive force being caused by output loading, thereby have increased the reliability of the first power operational amplifier and the second power operational amplifier.
Described temperature sensing circuit comprises the second digital-to-analogue conversion chip, negative tempperature coefficient thermistor, the 5th resistance and differential amplifier, the second described digital-to-analogue conversion chip is for receiving the digital signal being produced by external digital signal generator and converting analog signal to, the analog signal output of the second described digital-to-analogue conversion chip is connected with the electrode input end of described differential amplifier, one termination+5V voltage of described negative tempperature coefficient thermistor, the other end of described negative tempperature coefficient thermistor is connected with the negative input of one end of described the 5th resistance and described differential amplifier respectively, the other end ground connection of the 5th described resistance, the output of described differential amplifier is connected with the input of described PID regulating circuit.Staff is design temperature on external digital signal generator, the digital signal corresponding with design temperature is sent to the second digital-to-analogue conversion chip by external digital signal generator, convert analog signal to by the second digital-to-analogue conversion chip and be sent to differential amplifier, the temperature of relatively being set by differential amplifier and the difference of actual temperature, finally change the operating current of semiconductor cooler to adapt to the driving demand of semiconductor cooler, greatly improve the stability of semiconductor laser internal temperature, thereby make the Output optical power of semiconductor laser more stable.
Described PID regulating circuit comprises the 7th resistance, the 8th resistance, the 9th resistance, the first electric capacity, the second electric capacity, the 3rd electric capacity and the 6th precision operational-amplifier, one end of the 7th described resistance is connected with one end of the output of described differential amplifier and described the first electric capacity respectively, the other end of the first described electric capacity is connected with one end of the 8th described resistance, the other end of the 7th described resistance respectively with the negative input of described the 6th precision operational-amplifier, the other end of the 8th described resistance, one end of one end of the second described electric capacity and the 9th described resistance is connected, described the 6th electrode input end of precision operational-amplifier and the anode of reference power source are connected, the output of the 6th described precision operational-amplifier respectively with the other end of described the second electric capacity, one end of the electrode input end of the first described power operational amplifier and the 3rd described electric capacity is connected, the other end of the 3rd described electric capacity is connected with the other end of the 9th described resistance.
Described differential amplifier is made up of the peripheral resistance of AD620 instrument amplifier and standard, and the second described digital-to-analogue conversion chip adopts AD5060 digital-to-analogue conversion chip.The AD5060 digital-to-analogue conversion chip adopting is 16 bit digital analog converters, and its output valve is calculated the precision that can reach minimum 38.14 uV in theory.
Described adjustable constant-flow circuit is by the first digital-to-analogue conversion chip, the second precision operational-amplifier, the first resistance, nmos pass transistor, the second resistance, the 3rd resistance, one thousandth precision resister and the 3rd precision operational-amplifier composition, the first described digital-to-analogue conversion chip is for receiving the digital signal being produced by external digital signal generator and converting analog signal to, the analog signal output of the first described digital-to-analogue conversion chip is connected with the electrode input end of the second described precision operational-amplifier, the output of the second described precision operational-amplifier is connected with one end of the first described resistance, the other end of the first described resistance is connected with the grid of described nmos pass transistor, the drain electrode of described nmos pass transistor is for connecting the negative pole of semiconductor laser, the source electrode of described nmos pass transistor is connected with one end of the electrode input end of described the 3rd precision operational-amplifier and described one thousandth precision resister respectively, the other end ground connection of described one thousandth precision resister, the negative input of the 3rd described precision operational-amplifier is connected with one end of one end of described the second resistance and described the 3rd resistance respectively, the other end ground connection of the 3rd described resistance, the other end of the second described resistance is connected with the negative input of the output of described the 3rd precision operational-amplifier and described the second precision operational-amplifier respectively.
The second described precision operational-amplifier and the 3rd described precision operational-amplifier all adopt ADA4051-1 operational amplifier, and the first described digital-to-analogue conversion chip is AD5060 digital-to-analogue conversion chip.16 AD5060 digital-to-analogue conversion chips that adopt, as the constant current conditioning controller part of semiconductor laser, coordinate high-precision resistor network, can realize the Current Control precision of minimum 0.01mA.
Compared with prior art, the invention has the advantages that in drive circuit, the first Power arithmetic amplifying circuit and the second Power arithmetic amplifying circuit connect into H bridge-type structure, it is more convenient not only to make through the sense of current conversion of semiconductor cooler, realize Quick temperature adjustment to keep the stable function of semiconductor laser internal temperature, and avoided the switching frequency in semiconductor cooler electric current to disturb, thereby reduce the switching frequency interference noise in semiconductor laser output spectrum; The first Power arithmetic amplifying circuit and the second Power arithmetic amplifying circuit be the larger drive current of generation in the time being detected actual temperature by temperature sensing circuit and have the larger temperature difference with design temperature only, in the time that the actual temperature recording and design temperature approach, the output voltage of the first Power arithmetic amplifying circuit and the second Power arithmetic amplifying circuit is less, act on the positive pole of semiconductor cooler and the voltage of negative pole also simultaneously less, now the power consumption of semiconductor cooler is less, semiconductor cooler can not produce larger temperature overshoot joint, temperature has been obtained stable.
Brief description of the drawings
Fig. 1 is the schematic diagram of drive circuit of the present invention and semiconductor cooler;
Fig. 2 is the schematic diagram of temperature sensing circuit of the present invention and PID regulating circuit;
Fig. 3 is the schematic diagram of adjustable constant-flow circuit of the present invention.
Embodiment
Below in conjunction with accompanying drawing, embodiment is described in further detail the present invention.
A kind of Drive and Control Circuit of semiconductor laser, comprise adjustable temperature control circuit and adjustable constant-flow circuit, adjustable temperature control circuit comprises temperature sensing circuit, PID regulating circuit, drive circuit and semiconductor cooler TEC, as shown in Figure 1, drive circuit comprises the first Power arithmetic amplifying circuit, the second Power arithmetic amplifying circuit, the 12 resistance R the 12 and the 13 resistance R 13, the first Power arithmetic amplifying circuit comprises the first power operational amplifier U7 and the tenth resistance R 10, the second Power arithmetic amplifying circuit comprises the second power operational amplifier U8 and the 11 resistance R 11, the first power operational amplifier U7 and the second power operational amplifier U8 are LT1970 power operational amplifier, the electrode input end of the first power operational amplifier U7 is connected with the output of PID regulating circuit, the negative input of the first power operational amplifier U7 respectively with one end of the tenth resistance R 10, the positive pole of semiconductor cooler TEC, the FILTER pin of the first power operational amplifier U7 and the SENSE of the first power operational amplifier U7
-pin is connected, the V of the first power operational amplifier U7
eEthe V of pin and the first power operational amplifier U7
-pin is connected, the V of the first power operational amplifier U7
-connect-5V of pin voltage, the COMMON pin ground connection of the first power operational amplifier U7, the output of the first power operational amplifier U7 respectively with the other end of the tenth resistance R 10 and the SENSE of the first power operational amplifier U7
+pin is connected, the VC of the first power operational amplifier U7
sNKpin respectively with the anode of reference power source and the VC of the first power operational amplifier U7
sRCpin be connected, connect+5V of the VCC pin voltage of the first power operational amplifier U7, the VCC pin of the first power operational amplifier U7 respectively with the ENABLE pin of the first power operational amplifier U7 and the V of the first power operational amplifier U7
+pin is connected, the second electrode input end of power operational amplifier U8 and the anode of reference power source are connected, the negative input of the second power operational amplifier U8 is connected with the other end of the 13 resistance R 13 with the other end of the 12 resistance R 12 respectively, the V of the second power operational amplifier U8
eEpin respectively with the V of the second power operational amplifier U8
-pin and-5V voltage be connected, the COMMON pin ground connection of the second power operational amplifier U8, the FILTER pin of the second power operational amplifier U8 respectively with negative pole, one end of the 11 resistance R 11 and the SENSE of the second power operational amplifier U8 of semiconductor cooler TEC
-pin is connected, the output of the second power operational amplifier U8 respectively with the other end and the SENSE of the 11 resistance R 11
+pin is connected, the VC of the second power operational amplifier U8
sNKpin respectively with the anode of reference power source and the VC of the second power operational amplifier U8
sRCpin be connected, connect+5V of the VCC pin voltage of the second power operational amplifier U8, the VCC pin of the second power operational amplifier U8 respectively with the ENABLE pin of the second power operational amplifier U8 and the V of the second power operational amplifier U8
+pin is connected, the positive pole of semiconductor cooler TEC is provided with the first clamp circuit, the negative pole of semiconductor cooler TEC is provided with the second clamp circuit, the first clamp circuit comprises the first Schottky diode D1 and the second Schottky diode D2, the second clamp circuit comprises the 3rd Schottky diode D3 and the 4th Schottky diode D4, connect+5V of the negative pole of the first Schottky diode D1 voltage, the positive pole of the first Schottky diode D1 is connected with the positive pole of semiconductor cooler TEC with the negative pole of the second Schottky diode D2 respectively, connect-5V of the positive pole of the second Schottky diode D2 voltage, connect+5V of the negative pole of the 3rd Schottky diode D3 voltage, the positive pole of the 3rd Schottky diode D3 is connected with the negative pole of semiconductor cooler TEC with the negative pole of the 4th Schottky diode D4 respectively, connect-5V of the positive pole of the 4th Schottky diode D4 voltage.
As shown in Figure 2, temperature sensing circuit comprises the second digital-to-analogue conversion chip U4 that adopts AD5060 digital-to-analogue conversion chip, negative tempperature coefficient thermistor RT1, the 5th resistance R 5 and the differential amplifier being formed by AD620 instrument amplifier U5 and the peripheral resistance R 6 of standard, the second digital-to-analogue conversion chip U4 is for receiving the digital signal being produced by external digital signal generator and converting analog signal to, the analog signal output of the second digital-to-analogue conversion chip U4 is connected with the electrode input end of AD620 instrument amplifier U5, one termination+5V voltage of negative tempperature coefficient thermistor RT1, the other end of negative tempperature coefficient thermistor RT1 is connected with one end of the 5th resistance R 5 and the negative input of AD620 instrument amplifier U5 respectively, the other end ground connection of the 5th resistance R 5, PID regulating circuit comprises the 7th resistance R 7, the 8th resistance R 8, the 9th resistance R 9, the first capacitor C 1, the second capacitor C 2, the 3rd capacitor C 3 and the 6th precision operational-amplifier U6, one end of the 7th resistance R 7 is connected with the output of AD620 instrument amplifier U5 and one end of the first capacitor C 1 respectively, the other end of the first capacitor C 1 is connected with one end of the 8th resistance R 8, the other end of the 7th resistance R 7 respectively with the negative input of the 6th precision operational-amplifier U6, the other end of the 8th resistance R 8, one end of one end of the second capacitor C 2 and the 9th resistance R 9 is connected, the 6th electrode input end of precision operational-amplifier U6 and the anode of reference power source are connected, the output of the 6th precision operational-amplifier U6 respectively with the other end of the second capacitor C 2, one end of the electrode input end of the first power operational amplifier U7 and the 3rd capacitor C 3 is connected, the other end of the 3rd capacitor C 3 is connected with the other end of the 9th resistance R 9.
As shown in Figure 3, adjustable constant-flow circuit is by the first digital-to-analogue conversion chip U1 that adopts AD5060 digital-to-analogue conversion chip, adopt the second precision operational-amplifier U2 of ADA4051-1 operational amplifier, the first resistance R 1, nmos pass transistor Q1, the second resistance R 2, the 3rd resistance R 3, the 3rd precision operational-amplifier U3 composition of one thousandth precision resister R4 and employing ADA4051-1 operational amplifier, the first digital-to-analogue conversion chip U1 is for receiving the digital signal being produced by external digital signal generator and converting analog signal to, the analog signal output of the first digital-to-analogue conversion chip U1 is connected with the electrode input end of the second precision operational-amplifier U2, the output of the second precision operational-amplifier U2 is connected with one end of the first resistance R 1, the other end of the first resistance R 1 is connected with the grid of nmos pass transistor Q1, the drain electrode of nmos pass transistor Q1 is for connecting the negative pole of semiconductor laser LD, the source electrode of nmos pass transistor Q1 is connected with the electrode input end of the 3rd precision operational-amplifier U3 and one end of one thousandth precision resister R4 respectively, the other end ground connection of one thousandth precision resister R4, the negative input of the 3rd precision operational-amplifier U3 is connected with one end of the second resistance R 2 and one end of the 3rd resistance R 3 respectively, the other end ground connection of the 3rd resistance R 3, the other end of the second resistance R 2 is connected with the output of the 3rd precision operational-amplifier U3 and the negative input of the second precision operational-amplifier U2 respectively.
Operation principle of the present invention is as follows:
In adjustable temperature control circuit, set one by external digital signal generator and represent design temperature T
sETdigital signal input the second digital-to-analogue conversion chip U4, convert this digital signal to analog signal by the second digital-to-analogue conversion chip U4 and export from analog signal output with the form of voltage, the negative tempperature coefficient thermistor RT1 that is simultaneously arranged in the internal environment of semiconductor laser accurately measures the real time temperature T of semiconductor laser exocoel
temp, by AD620 instrument amplifier U5 with certain gain multiple by design temperature T
sETwith real time temperature T
tempdifference amplify, amplify voltage Vdiff from the output output difference of AD620 instrument amplifier U5, difference is amplified voltage Vdiff after the filtering of PID regulating circuit, the accuracy of whole circuit gets a promotion, export the primary voltage V7 as the input of drive circuit, V7=V from the output of the 6th precision operational-amplifier U6 simultaneously
rEF+ Vdiff, wherein V
rEFrepresent the magnitude of voltage of the anode of reference power source, finally act on voltage U=r12/r13 × (V7-VREF)=(the r12/r13) × Vdiff between positive pole and the negative pole of semiconductor cooler TEC, wherein, r12 is the resistance of the 12 resistance R 12, r13 is the resistance of the 13 resistance R 13, and r12/r13 represents the proportionality coefficient of difference amplification voltage Vdiff.Produce continuous Vdiff by the mode of amplifying with linearity and carry out temperature feedback, the interference that the switching frequency of having avoided semiconductor cooler TEC to be subject to causes, the steady-state error of semiconductor laser internal temperature is reduced greatly, semiconductor cooler TEC can continue to keep stationary temperature, thereby has realized the automatic constant control of noise spectra of semiconductor lasers internal temperature.
In adjustable constant-flow circuit, according to constant-current circuit feature, the voltage that the electrode input end P1 of the second precision operational-amplifier U2 is ordered is V1, and the voltage that the electrode input end P2 of the 3rd precision operational-amplifier U3 is ordered is V2, V1=V2, and V2=I
lD× r4, I
lDfor the current value of the semiconductor laser LD that flows through, r4 is the resistance of one thousandth precision resister R4, the small voltage fluctuation that P2 is ordered feeds back to the output P3 point of the 3rd precision operational-amplifier U3, the difference relation of the voltage V2 that the voltage V3 that P3 is ordered and P2 are ordered has obtained amplification, make the small voltage fluctuation that P2 is ordered obtain reverse compensation, finally make the voltage that P2 is ordered keep high stable state.
Claims (8)
1. the Drive and Control Circuit of a semiconductor laser, comprise adjustable temperature control circuit and adjustable constant-flow circuit, described adjustable temperature control circuit comprises temperature sensing circuit, PID regulating circuit, drive circuit and semiconductor cooler, it is characterized in that described drive circuit comprises the first Power arithmetic amplifying circuit, the second Power arithmetic amplifying circuit, the 12 resistance and the 13 resistance, the input of the first described Power arithmetic amplifying circuit is connected with the output of described PID regulating circuit, the output of the first described Power arithmetic amplifying circuit respectively with the negative input of described the first Power arithmetic amplifying circuit, the positive pole of described semiconductor cooler is connected with one end of the 12 described resistance, the negative pole of described semiconductor cooler is connected with one end of the output of described the second Power arithmetic amplifying circuit and described the 13 resistance respectively, the other end of the 13 described resistance is connected with the other end of the negative input of described the second Power arithmetic amplifying circuit and described the 12 resistance respectively, described second electrode input end of Power arithmetic amplifying circuit and the anode of reference power source are connected.
2. the Drive and Control Circuit of a kind of semiconductor laser according to claim 1, it is characterized in that the first described Power arithmetic amplifying circuit comprises the first power operational amplifier and the tenth resistance, the second described Power arithmetic amplifying circuit comprises the second power operational amplifier and the 11 resistance, the first described power operational amplifier and the second described power operational amplifier are LT1970 power operational amplifier, the electrode input end of the first described power operational amplifier is connected with the output of described PID regulating circuit, the negative input of the first described power operational amplifier respectively with one end of described the tenth resistance, the positive pole of described semiconductor cooler, the SENSE of the FILTER pin of the first described power operational amplifier and the first described power operational amplifier
-pin is connected, the V of the first described power operational amplifier
eEthe V of pin and described the first power operational amplifier
-pin is connected, the V of the first described power operational amplifier
-connect-5V of pin voltage, the COMMON pin ground connection of the first described power operational amplifier, the output of the first described power operational amplifier respectively with the SENSE of the other end of described the tenth resistance and described the first power operational amplifier
+pin is connected, the VC of the first described power operational amplifier
sNKpin respectively with the VC of the anode of reference power source and described the first power operational amplifier
sRCpin is connected, connect+5V of the VCC pin voltage of the first described power operational amplifier, the VCC pin of the first described power operational amplifier respectively with the V of the ENABLE pin of described the first power operational amplifier and described the first power operational amplifier
+pin is connected, the described electrode input end of the second power operational amplifier and the anode of reference power source are connected, the negative input of the second described power operational amplifier is connected with the other end of the other end of described the 12 resistance and described the 13 resistance respectively, the V of the second described power operational amplifier
eEthe V of pin and described the second power operational amplifier
-pin is connected, the V of the second described power operational amplifier
-connect-5V of pin voltage, the COMMON pin ground connection of the second described power operational amplifier, the FILTER pin of the second described power operational amplifier respectively with the SENSE of one end of the negative pole of described semiconductor cooler, described the 11 resistance and described the second power operational amplifier
-pin is connected, the output of the second described power operational amplifier respectively with the other end of described the 11 resistance and described SENSE
+pin is connected, the VC of the second described power operational amplifier
sNKpin respectively with the VC of the anode of reference power source and described the second power operational amplifier
sRCpin is connected, connect+5V of the VCC pin voltage of the second described power operational amplifier, the VCC pin of the second described power operational amplifier respectively with the V of the ENABLE pin of described the second power operational amplifier and described the second power operational amplifier
+pin is connected.
3. the Drive and Control Circuit of a kind of semiconductor laser according to claim 2, the positive pole that it is characterized in that described semiconductor cooler is provided with the first clamp circuit, the negative pole of described semiconductor cooler is provided with the second clamp circuit, the first described clamp circuit comprises the first Schottky diode and the second Schottky diode, the second described clamp circuit comprises the 3rd Schottky diode and the 4th Schottky diode, connect+5V of the negative pole voltage of the first described Schottky diode, the positive pole of the first described Schottky diode is connected with the positive pole of the negative pole of described the second Schottky diode and described semiconductor cooler respectively, connect-5V of the positive pole voltage of the second described Schottky diode, connect+5V of the negative pole voltage of the 3rd described Schottky diode, the positive pole of the 3rd described Schottky diode is connected with the negative pole of the negative pole of described the 4th Schottky diode and described semiconductor cooler respectively, connect-5V of the positive pole voltage of the 4th described Schottky diode.
4. the Drive and Control Circuit of a kind of semiconductor laser according to claim 2, it is characterized in that described temperature sensing circuit comprises the second digital-to-analogue conversion chip, negative tempperature coefficient thermistor, the 5th resistance and differential amplifier, the second described digital-to-analogue conversion chip is for receiving the digital signal being produced by external digital signal generator and converting analog signal to, the analog signal output of the second described digital-to-analogue conversion chip is connected with the electrode input end of described differential amplifier, one termination+5V voltage of described negative tempperature coefficient thermistor, the other end of described negative tempperature coefficient thermistor is connected with the negative input of one end of described the 5th resistance and described differential amplifier respectively, the other end ground connection of the 5th described resistance, the output of described differential amplifier is connected with the input of described PID regulating circuit.
5. the Drive and Control Circuit of a kind of semiconductor laser according to claim 4, it is characterized in that described PID regulating circuit comprises the 7th resistance, the 8th resistance, the 9th resistance, the first electric capacity, the second electric capacity, the 3rd electric capacity and the 6th precision operational-amplifier, one end of the 7th described resistance is connected with one end of the output of described differential amplifier and described the first electric capacity respectively, the other end of the first described electric capacity is connected with one end of the 8th described resistance, the other end of the 7th described resistance respectively with the negative input of described the 6th precision operational-amplifier, the other end of the 8th described resistance, one end of one end of the second described electric capacity and the 9th described resistance is connected, described the 6th electrode input end of precision operational-amplifier and the anode of reference power source are connected, the output of the 6th described precision operational-amplifier respectively with the other end of described the second electric capacity, one end of the electrode input end of the first described power operational amplifier and the 3rd described electric capacity is connected, the other end of the 3rd described electric capacity is connected with the other end of the 9th described resistance.
6. the Drive and Control Circuit of a kind of semiconductor laser according to claim 5, it is characterized in that described differential amplifier is made up of AD620 instrument amplifier and the peripheral resistance of standard, the second described digital-to-analogue conversion chip adopts AD5060 digital-to-analogue conversion chip.
7. the Drive and Control Circuit of a kind of semiconductor laser according to claim 1, it is characterized in that described adjustable constant-flow circuit is by the first digital-to-analogue conversion chip, the second precision operational-amplifier, the first resistance, nmos pass transistor, the second resistance, the 3rd resistance, one thousandth precision resister and the 3rd precision operational-amplifier composition, the first described digital-to-analogue conversion chip is for receiving the digital signal being produced by external digital signal generator and converting analog signal to, the analog signal output of the first described digital-to-analogue conversion chip is connected with the electrode input end of the second described precision operational-amplifier, the output of the second described precision operational-amplifier is connected with one end of the first described resistance, the other end of the first described resistance is connected with the grid of described nmos pass transistor, the drain electrode of described nmos pass transistor is for connecting the negative pole of semiconductor laser, the source electrode of described nmos pass transistor is connected with one end of the electrode input end of described the 3rd precision operational-amplifier and described one thousandth precision resister respectively, the other end ground connection of described one thousandth precision resister, the negative input of the 3rd described precision operational-amplifier is connected with one end of one end of described the second resistance and described the 3rd resistance respectively, the other end ground connection of the 3rd described resistance, the other end of the second described resistance is connected with the negative input of the output of described the 3rd precision operational-amplifier and described the second precision operational-amplifier respectively.
8. the Drive and Control Circuit of a kind of semiconductor laser according to claim 7, it is characterized in that the second described precision operational-amplifier and the 3rd described precision operational-amplifier all adopt ADA4051-1 operational amplifier, the first described digital-to-analogue conversion chip is AD5060 digital-to-analogue conversion chip.
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| CN105045308A (en) * | 2015-08-12 | 2015-11-11 | 北京空间机电研究所 | Semiconductor refrigerator closed-loop control method applied to space environment |
| CN105208739A (en) * | 2015-10-21 | 2015-12-30 | 广东威创视讯科技股份有限公司 | Constant-current driving device for laser light source |
| CN106340804A (en) * | 2016-11-09 | 2017-01-18 | 苏州圣昱激光测量技术有限公司 | Driving source structure of short-pulse heavy-current semiconductor laser for laser scanning |
| CN107894798A (en) * | 2017-12-26 | 2018-04-10 | 合肥金星机电科技发展有限公司 | Distributed Feedback Laser temperature control circuit |
| CN108206449A (en) * | 2016-12-16 | 2018-06-26 | 上海航天科工电器研究院有限公司 | Laser driving circuit |
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| CN109217101A (en) * | 2018-09-29 | 2019-01-15 | 武汉光迅电子技术有限公司 | A kind of laser diode current driving circuit and driving method with maximum current protection |
| CN113594849A (en) * | 2021-07-02 | 2021-11-02 | 中科慧远视觉技术(北京)有限公司 | Laser constant current driving method and LED light source driving circuit |
| CN117374725A (en) * | 2023-12-05 | 2024-01-09 | 成都光创联科技有限公司 | Burst mode laser drive control circuit and method |
| CN117374725B (en) * | 2023-12-05 | 2024-03-19 | 成都光创联科技有限公司 | Burst mode laser drive control circuit and method |
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