CN101404376A - Automatic temperature control apparatus of pump laser for ASE broadband light source - Google Patents
Automatic temperature control apparatus of pump laser for ASE broadband light source Download PDFInfo
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- CN101404376A CN101404376A CNA2008101949206A CN200810194920A CN101404376A CN 101404376 A CN101404376 A CN 101404376A CN A2008101949206 A CNA2008101949206 A CN A2008101949206A CN 200810194920 A CN200810194920 A CN 200810194920A CN 101404376 A CN101404376 A CN 101404376A
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Abstract
The invention designs an automatic temperature control circuit which has exact control, reliable and stable performance and complete protective measures, and is used for executing effective real time control on the temperature of a tube core of a pump laser in ASE broadband light source. The control device adopts the design proposal of a temperature control system based on Proportion Integration Differentiation (PID) control and pulse-width modulation (PWM) braking mechanism and realizes the designs by adopting a pure hardware circuit; the control device comprises a reference voltage circuit, a pumping tube core temperature testing circuit, a thermoelectric voltage amplifier circuit, a PID controller, a pumping refrigeration current limiting protective threshold set circuit, an efficient PWM control driver, a pumping semiconductor refrigerator and a pumping tube core temperature out-of-limit close protective circuit. The whole circuit has simple and compact design, high reliability as well as heating and refrigerating efficiency, and little self heating, thereby greatly reducing the power consumption and volume of a pumping temperature controller; as the control device has the complete protective function, when the temperature of the pumping tube core exceeds the set range of operating temperature, the circuit sends out the gang control signal to automatically close a drive circuit of the pumping. The pumping refrigeration current limiting protective circuit limits the refrigeration current within the range of the preset maximum refrigeration current range to prevent the pumping from being damaged.
Description
Technical field
The present invention relates to a kind of automatic temperature control, particularly relate to the automatic temperature control of a kind of ASE (amplifiedspontaneous emission, amplified spont-aneous emission) wideband light source with pump laser.
Background technology
21 century, optical communication technique has obtained development at full speed.Optical transmission system has experienced PDH (Pseudo-synchronous Digital Hierarchy) (PDH) system, synchronous digital hierarchy (SDH) system, the very evolution of popular dense wave division multipurpose (DWDM) system up till now again, special, the appearance of DWDM technology has greatly improved the capacity and the speed of system transmissions data.The progress of optical communication technique has driven the development in an all-round way of optical communication industry, and various relevant optical passive component manufacturers, optical active component manufacturer, erbium-doped fiber amplifier (EDFA) manufacturer, system integrator and testing equipment manufacturer emerge like the mushrooms after rain rapidly.
The ASE light source is the wideband light source of a kind of high stability, high power output, and wavelength can cover the C+L wave band at present.As a kind of very crucial device, the ASE wideband light source is in the production and the test of optical passive component, Fibre Optical Sensor, the test of EDFA and production, SDH, dwdm system test, and obtained in many optical communication fields such as laboratory tests using widely, compare with tunable laser source with white light source, the ASE wideband light source has low coherence, and the wave-length coverage of covering is wide, Output optical power is big, stable advantages of higher.
Pump laser as one of core component of ASE wideband light source, it is providing source device output optical power required energy, as the light source pump laser, majority is to use semiconductor laser, according to having or not refrigerator can be divided into no refrigeration pump laser again and two kinds of refrigeration pump lasers being arranged, no refrigeration pump laser does not need temperature control because power output is smaller, generally is used to make the ASE light source of little power output.The ASE light source that the present invention relates to is the bigger wideband light source of a kind of output, use be that the refrigeration pump laser is arranged.It requires very high to the tube core working temperature, only in a suitable operating temperature range, the work that pump laser ability is safe and reliable, any excessive variations in temperature, the capital causes the central task wave length shift of pump laser, operating efficiency obviously descends, even can damage pump laser, and this damage is expendable.Therefore it is particularly important to design accurate, the reliable and stable pump laser die temperature automatic control circuit of a control.
Summary of the invention
It is accurate, reliable and stable that the present invention has designed a control, and the automatic temperature control circuit that safeguard measure is complete is used for the ASE wideband light source die temperature of pump laser is carried out real-time and effective control.
Described control device has adopted the design for temperature control system scheme based on proportion integration differentiation PID control and pulse width modulation (PWM) driving mechanism; adopt pure hardware circuit to realize design; it comprises: reference voltage circuit, pumping tube core temperature sensing circuit, thermoelectric voltage amplifying circuit, proportion integration differentiation PID controller, pumping refrigeration current limitation protection threshold setting circuit, efficient PWM Control Driver, pumping semiconductor cooler, the out-of-limit pass of pumping die temperature pump protective circuit.
Traditional pumping temperature control circuit adopts pliotron or Darlington transistor to drive usually, the shortcoming of this type of drive is, the pumping die temperature is being implemented in the process of control, energy consumption is arranged greatly on triode or Darlington transistor and be converted into heat release and go out, can work reliably in order to make circuit, triode needs the larger area fin, so not only increased the volume and weight of circuit, and the inefficiency of system has been wasted the energy.For realizing specific function, peripheral device increases, and has so also reduced the reliability of system.
The invention circuit adopts the very high incorporate efficient PWM Control Driver of integrated level, is characterized in, and entire circuit simplicity of design compactness, the reliability height, heating and cooling efficient height, self-heating is considerably less, has greatly reduced the power consumption and the volume of pumping temperature controller.Compare with those so-called digital control approaches that adopt single-chip microcomputer to add A/D (modulus) transducer, D/A (digital-to-analogue) transducer, the present invention adopts the pure hardware circuit mode to realize design, use the hardware pid control mode, temperature control rapidly, accurately, make being operated in the suitable temperature range that pump laser can be reliable and stable, can not occur running the system's dire consequences out of control that flies or crash and cause because of Single Chip Microcomputer (SCM) program.It is characterized in that entire circuit also has perfect defencive function, when the pumping die temperature exceeded the operating temperature range of setting, circuit sent the interlock control signal, turn-offed the drive circuit of pumping automatically.Pumping refrigeration current limitation protective circuit can be limited in the refrigeration electric current within the predefined maximum refrigeration current range, is not damaged with the protection pumping.
Description of drawings
Fig. 1 is the functional-block diagram of ASE wideband light source with the die temperature automatic control equipment of pump laser.
Fig. 2 is the reference voltage circuit schematic diagram.
Fig. 3 is a pumping tube core temperature sensing circuit schematic diagram.
Fig. 4 is a thermoelectric voltage amplifying circuit schematic diagram.
Fig. 5 is proportion integration differentiation (PID) controller principle figure.
Fig. 6 is pumping refrigeration current limitation protection threshold setting circuit theory diagrams.
Fig. 7 is efficient PWM Control Driver schematic diagram.
Fig. 8 is the out-of-limit pass of a pumping die temperature pump protective circuit schematic diagram.
Fig. 9 is the principle schematic of pumping semiconductor cooler.
Embodiment
The functional-block diagram of the automatic temperature control of ASE wideband light source usefulness pump laser as shown in Figure 1.
It comprises: reference voltage circuit 1, pumping tube core temperature sensing circuit 2, thermoelectric voltage amplifying circuit 3, proportion integration differentiation PID controller 4, pumping refrigeration current limitation protection threshold setting circuit 5, efficient PWM Control Driver 6, pumping semiconductor cooler 7, the out-of-limit pass of pumping die temperature pump protective circuit 8.
Annexation and operation principle are as follows:
Pumping tube core temperature sensing circuit 2 outputs to thermoelectric voltage amplifying circuit 3 after converting pumping tube core temperature signal to voltage signal.After voltage difference after the voltage signal of 3 these pumping die temperatures that receive of thermoelectric voltage amplifying circuit and predefined pumping target temperature voltage signal compare is amplified, output voltage is sent to the input of PID controller 4, after PID controller 4 calculation process, generate PWM and drive needed control voltage, be loaded into efficient PWM Control Driver 6.The effect of pumping refrigeration current limitation protection threshold setting circuit 5 is that the control voltage limit that is loaded into efficient PWM Control Driver 6 is being calculated within the good voltage range in advance, guarantees that pumping can not damaged by excessive refrigeration electric current or heating current.Be subjected to the control voltage of PID controller 4 outputs of pumping refrigeration current limitation protection threshold setting circuit 5 constraints; drive output voltage through generating PWM after the efficient PWM Control Driver 6 conditioning conversion; be loaded into then on the pumping semiconductor cooler 7; produce the refrigeration electric current or the heating current of certain orientation and size, the pumping die temperature is reduced or rising.Pumping semiconductor cooler 7 is integrated in pump laser inside with the pumping temperature sensor, after the temperature sensor feedback, finally reaches the state of a dynamic equilibrium, and the pumping die temperature is maintained on the working point of setting.
Pumping tube core automatic temperature control of the present invention also possesses the out-of-limit pass of pumping die temperature pump defencive function except having pumping refrigeration current limitation defencive function.The out-of-limit pass of pumping die temperature pump protective circuit 8 is provided with two of pumping die temperature protection thresholdings, i.e. high temperature thresholding and low temperature thresholding, and it is controlled by the pumping tube core temperature detection voltage signal of pumping tube core temperature sensing circuit 2 outputs.When the pumping die temperature is lower than the low temperature thresholding or is higher than the high temperature thresholding; this circuit can be exported a TTL low level; this level outputs to the pump switch pump control circuit; be used for finishing the protection operation of the out-of-limit pass of pumping die temperature pump, avoid pump laser to damage because of die temperature exceeds working range.
According to functional-block diagram 1 and described operation principle, the each several part functional circuit is done detailed description below.
(1) reference voltage circuit
The reference voltage circuit schematic diagram as shown in Figure 2.
Reference voltage circuit provides the operating voltage benchmark of whole pumping die temperature control circuit.It outputs in the functional circuit of other all these reference voltages of needs.
Among Fig. 2, VCC represents supply voltage.Resistance R 28 and voltage stabilizing didoe VD3 have formed voltage stabilizing circuit.One termination power voltage VCC of resistance R 28, the other end links to each other with the negative pole of voltage stabilizing didoe VD3, the plus earth of voltage stabilizing two utmost point VD3, operational amplifier D4 is designed to the form of emitter follower, in-phase input end is connected with the negative pole of voltage stabilizing two utmost point VD3, inverting input links to each other with output, the negative pole output voltage of voltage stabilizing two utmost point VD3 is through after the emitter follower impedance matching and improving driving force, by operational amplifier D4 output pin output voltage V ref, Vref is exactly the working standard voltage of entire circuit.
(2) pumping tube core temperature sensing circuit
Pumping tube core temperature sensing circuit schematic diagram as shown in Figure 3.
The effect of pumping tube core temperature sensing circuit 2 is: the die temperature conversion of signals of pumping is become voltage signal, and this circuit also produces the determining voltage signal of giving of pump laser target die temperature.
Among Fig. 3, pumping tube core temperature sensing circuit is a kind of bridge type temperature sensing circuit.Comprise two parts: die temperature test section and die temperature are given certain portions.Vref is the operating voltage benchmark, comes from reference voltage circuit (1).Resistance R T is the die temperature transducer of pump laser, is integrated in the inside of pump laser, and it is a kind of thermistor with negative temperature coefficient, and its resistance reduces along with the rising of temperature.
Thermistor RT, resistance R 1 have been formed the die temperature test section.Concrete annexation is: a termination Vref of resistance R 1, the other end is connected with the end of thermistor RT, the other end ground connection of thermistor RT.The voltage to earth Vtmp of thermistor RT is exactly the detection voltage of pumping die temperature.It detects principle: electric current is flowed through resistance R 1 and thermistor RT to ground by Vref, the variation that pumping tube core variation of temperature is brought thermistor RT resistance, according to the principle of electric resistance partial pressure, the variation of thermistor RT resistance causes the variation of voltage Vtmp again, specifically, when the pumping die temperature raises, thermistor RT resistance diminishes, and voltage Vtmp diminishes, when the pumping die temperature reduces, it is big that thermistor RT resistance becomes, and it is big that voltage Vtmp becomes.Therefore, detecting voltage Vtmp changes along with the change of pumping die temperature.
Resistance R 2, resistance R 4 have been formed die temperature and have been given certain portions.Concrete annexation is: a termination Vref of resistance R 2, the other end is connected with an end of resistance R 4, the other end ground connection of resistance R 4.The voltage to earth Vset of resistance R 4 is exactly the given voltage of pumping die temperature, perhaps is called the given voltage of pumping target die temperature.
Voltage Vset and Vtmp will be sent to thermoelectric voltage amplifying circuit (3) and carry out processing and amplifying.
In addition, the detection voltage Vtmp of pumping die temperature also will export the out-of-limit pass of pumping die temperature pump protective circuit 8.
(3) thermoelectric voltage amplifying circuit
Thermoelectric voltage amplifying circuit schematic diagram as shown in Figure 4.
The effect of thermoelectric voltage amplifying circuit is: the detectable voltage signals of pumping die temperature and predefined pumping target die temperature are compared to determining voltage signal, and after the voltage difference after relatively amplified, output to PID controller 4.
Among Fig. 4, Vref is the operating voltage benchmark, comes from reference voltage circuit 1.Resistance R 10, R11, R12, R13 and operational amplifier D1 have formed a differential amplifier circuit.Concrete annexation is: resistance R 10 1 ends connect the detection voltage Vtmp of pumping die temperature, the other end be connected with the inverting input of operational amplifier D1 again after an end of resistance R 12 is connected, the other end of resistance R 12 is connected with the output of operational amplifier D1, resistance R 11 1 ends connect the given voltage Vset of pumping die temperature, the other end be connected with the in-phase input end of operational amplifier D1 again after an end of resistance R 13 is connected, the other end of resistance R 13 is connected with operating voltage benchmark Vref.
Pressure reduction between voltage Vset and the Vtmp is called as thermoelectric voltage, is expressed as
Verr，Verr＝Vset-Vtmp，
Verr is undertaken outputing to PID controller 4 after the processing and amplifying by thermoelectric voltage amplifying circuit 3.
Operational amplifier will select that low temperature floats, the device of low maladjustment voltage for use.Generally speaking, the selection of resistance is such, requirement, R10=R11, R12=R13.
(4) proportion integration differentiation PID controller
Proportion integration differentiation PID controller principle figure as shown in Figure 5.
The effect of PID controller is: accept the voltage signal from the output of thermoelectric voltage amplifying circuit, this voltage signal is compared with the given signal Vref of the control of PID controller, produce pressure difference signal, this pressure difference signal is through behind the pid calculation, generate the control voltage signal, output to efficient PWM Control Driver 6.
Among Fig. 5, Vref is the operating voltage benchmark, comes from reference voltage circuit 1.Resistance R 3, R5, R14, capacitor C 1 have been formed the PID control circuit with operational amplifier D2.Concrete annexation is: an end of resistance R 3 connects the voltage Vcon of thermoelectric voltage amplifying circuit output, and the other end is with after an end of resistance R 14 is connected, and the inverting input with operational amplifier D2 is connected again.The other end of resistance R 14 is connected with an end of capacitor C 1, and the other end of capacitor C 1 is connected with the output of operational amplifier D2.One end of resistance R 5 is connected with Vref, and the other end is connected with the in-phase input end of operational amplifier D2.The output voltage of operational amplifier D2 is assumed to be Vpid, and this voltage outputs to efficient PWM Control Driver 6.
(5) pumping refrigeration current limitation protection threshold setting circuit
Pumping refrigeration current limitation protection threshold setting circuit theory diagrams as shown in Figure 6.
Pumping refrigeration current limitation protection threshold setting circuit is according to the size of the pumping that will limit maximum refrigeration electric current and maximum heat current; set in advance two independent protection threshold voltages, and these two voltage signals have been loaded into the input of efficient PWM Control Driver 6 in the mode of Schottky diode combination.The effect of this circuit is: pumping refrigeration electric current is limited within the scope of maximum refrigeration electric current and maximum heat current, prevents that pump laser from damaging above the maximum limit that pumping can bear because of the refrigeration electric current.
Pumping refrigeration current limitation protection threshold setting circuit comprises two parts: maximum heat current threshold setting circuit, maximum refrigeration current threshold initialization circuit.Among Fig. 6, Vref is the operating voltage benchmark, comes from reference voltage circuit 1.Resistance R 26, R27, operational amplifier D9, Schottky diode VD2 have formed maximum heat current threshold setting circuit.Its circuit form is an in-phase voltage amplifier.Concrete annexation: voltage Vref connects the in-phase input end of operational amplifier D9, resistance R 26 1 end ground connection, the other end with link to each other with the inverting input of operational amplifier D9 again after an end of resistance R 27 links to each other, the other end of resistance R 27 links to each other with the output of operational amplifier D9 and the negative pole of Schottky diode VD2.Resistance R 8, R25, operational amplifier D8, Schottky diode VD1 have formed maximum refrigeration current threshold initialization circuit.Its circuit form is the combination of resitstance voltage divider+voltage emitter follower.Concrete annexation: an end of resistance R 8 links to each other with Vref, the other end is connected with the in-phase end of operational amplifier D8 with the continuous back of an end of resistance R 25, the other end ground connection of resistance R 25, the inverting input of operational amplifier D8 links to each other with the positive pole of output and Schottky diode VD1, and the negative pole of Schottky diode VD1 is connected with the positive pole of VD2.
The operation principle of this functional circuit is as follows:
Among Fig. 6, suppose that the output voltage of operational amplifier D9 is Vh, the output voltage of operational amplifier D8 is Vl, and the cathode voltage of Schottky diode VD1 is Vlimit.According to maximum heat current calculating voltage Vh, by build-out resistor R26, R27, obtain voltage Vh, and Vh＞Vref.According to maximum refrigeration electric current calculating voltage Vl, by build-out resistor R8, R25, obtain voltage Vl, and Vl＜Vref, so, Vl＜Vref＜Vh.If pumping refrigeration electric current is less than the maximum electric current that freezes; and also less than maximum heat current; voltage Vl＜Vlimit＜Vh then, diode VD1, the VD2 of this moment all end because of back biased, and pumping refrigeration current limitation protection threshold setting circuit is inoperative.When pumping refrigeration electric current freezes electric current greater than maximum, Vlimit＜Vl, while Vlimit＜Vh, diode VD1 is because of the forward bias conducting, diode VD2 ends because of back biased, voltage Vlimit is clamped down in the position of voltage Vl by VD1, and like this, pumping refrigeration electric current just is clamped at the position of maximum refrigeration electric current.When pumping refrigeration electric current during greater than maximum heat current, Vlimit＞Vh, while Vlimit＞Vl, diode VD1 ends because of reverse bias, diode VD2 is because of positive biasing conducting, voltage Vlimit is clamped down in the position of voltage Vh by VD2, and like this, pumping refrigeration electric current just is clamped at the position of maximum heat current.Thereby protected pump laser, avoided causing damage because of refrigeration electric current or heating current are excessive.
(6) efficient PWM Control Driver
The schematic diagram of efficient PWM Control Driver as shown in Figure 7.
The effect of efficient PWM Control Driver is: it accepts to come from the control voltage Vpid of PID controller output; and under the constraint of two protection threshold voltage values that pumping refrigeration current limitation protection threshold setting circuit is provided with; produce the PWM drive voltage signal of certain orientation and size; through after the Filtering Processing; be loaded into the two ends of pumping semiconductor cooler 7; in refrigerator, form suitable refrigeration electric current, the pumping die temperature is raise or reduction.
Compare with other pumping refrigeration drive unit; characteristics of the present invention are: adopted the PWM controlling and driving chip of a high integration, high reliability, its is inner integrated, and fixed gain differential amplifier, pwm signal generator, metal-oxide-semiconductor drive circuit, high-power MOS tube drive electric bridge, the out-of-limit protective circuit of temperature, current-limiting protection circuit, power initiation protective circuit, Transistor-Transistor Logic level input buffer circuit, IC inefficacy indicating circuit or the like.The operating voltage range of this IC wide (2.8V～5.5V), output current is big, maximum exportable ± electric current of 3A, high efficiency, the chip self-heating is few, possesses the overtemperature and overcurrent protection, two kinds of operating frequencies are selected, advantages such as low electromagnetic interference (EMI).Because this IC is integrated into chip internal with high-power MOS tube, but IC heating itself again seldom, do not need fin substantially, reduced the volume of pumping refrigeration drive circuit greatly, reduces electromagnetic interference.The peripheral a spot of several elements of configuration that only need can be formed a drive circuit of pumping refrigeration efficiently.
According to shown in Figure 7, efficient PWM Control Driver circuit comprises core I C conditioning chip D5 (model DRV591), RC oscillating circuit, LC filter circuit, refrigeration current limitation protective circuit operating resistance R15.Resistance R 21, capacitor C 8 link to each other with ROSC, the COSC pin of conditioning chip D5 respectively, form the oscillating circuit of conditioning chip D5.One end of inductance L 1 is connected to the OUT-end of conditioning chip D5, and the L1 other end links to each other with the end of capacitor C 5, C6, is connected the other end ground connection of capacitor C 6 with the TEC-end of pumping semiconductor cooler 7 again.One end of inductance L 2 is connected to the OUT+ end of conditioning chip D5, and the L2 other end links to each other with the other end of capacitor C 5, an end of capacitor C 7, is connected the other end ground connection of capacitor C 7 with the TEC+ end of pumping semiconductor cooler 7 again.Resistance R 15 1 ends connect the output Vpid of PID controller, and the other end connects the IN-pin of conditioning chip D5 and the output TEC_LIMIT of pumping refrigeration current-limiting circuit, and the IN+ pin of conditioning chip D5 links to each other with reference voltage Vref.
The operation principle of this functional circuit is as follows:
Among Fig. 7; suppose; the voltage of the IN-pin of conditioning chip D5 is Vin-; the voltage of the OUT-end of conditioning chip D5 is Vout-; the voltage of the OUT+ end of conditioning chip D5 is that Vout+. works as pumping refrigeration electric current less than the maximum electric current that freezes; and during also less than maximum heat current; pumping refrigeration current limitation protection threshold setting circuit is inoperative; at this moment; voltage Vin-=Vpid; voltage Vin-and Vref be the pressure reduction of back generation relatively; after the fixed gain differential amplifier of PWM control conditioning chip D5 inside amplifies; generate pwm control signal; remove to nurse one's health the pwm signal generator of chip D5 inside; produce the pwm signal of one group of certain pulse duration; this pwm signal is after the conversion of metal-oxide-semiconductor drive circuit is amplified; being loaded into high-power MOS tube drives on the electric bridge; two outputs of electric bridge are OUT-end and the OUT+ end of conditioning chip D5; after the filtering of PWM driving voltage through the LC filter circuit of back of OUT-end and the output of OUT+ end; obtain a level and smooth voltage; be loaded into pumping semiconductor cooler two ends, in refrigerator, produce the refrigeration electric current, the pumping die temperature is raise or reduction.If pumping is in refrigerating state, Vout+＞Vout-so, working mechanism according to conditioning chip D5, Vref＞Vin-, and, the refrigeration electric current is big more, the pressure reduction of Vout+ and Vout-is just big more, and the pressure reduction between Vref and the Vin-is also big more, so Vin-is just more little, increase along with the refrigeration electric current, Vin-reduces gradually, up to Vin-by Fig. 6 in diode VD1 clamp down at voltage Vl place, this moment voltage Vin-be limited by diode VD1, and can not reduce along with the reduction of voltage Vpid, so pumping refrigeration electric current is clamped at the position of maximum refrigeration electric current again.If pumping is in heated condition, Vout+＜Vout-so, working mechanism according to conditioning chip D5, Vref＜Vin-, and, heating current is big more, the pressure reduction of Vout+ and Vout-is just big more, and the pressure reduction between Vref and the Vin-is also big more, so Vin-is just big more, increase along with heating current, Vin-raises gradually, up to Vin-by Fig. 6 in diode VD2 clamp down at voltage Vh place, this moment voltage Vin-be limited by diode VD2, and can not increase along with the increase of voltage Vpid again, so pumping refrigeration electric current is clamped at the position of maximum heat current.
(7) pumping semiconductor cooler
The principle schematic of pumping semiconductor cooler as shown in Figure 9.
Pumping semiconductor cooler (claiming TEC again) is encapsulated in the pump laser, is the semiconductor device that a kind of Pa Er of utilization card (Peltier) effect is freezed or heated.Ceramic electrode 9 at pumping refrigerator two ends applies a direct current voltage, will produce a direct current electric current, this electric current makes the one side of pumping refrigerator heat, the another side refrigeration, change the direction of voltage, can make the one side refrigeration originally heat, and the one side of original refrigeration heated, the die temperature of pump laser will raise along with the heating of refrigerator or refrigeration or reduce.Among the figure 10 is the semi-conducting materials that are positioned at 1 of ceramic electrode.
(8) the out-of-limit pass of pumping die temperature pump protective circuit
The out-of-limit pass of pumping die temperature pump protective circuit schematic diagram as shown in Figure 8.
The effect of the out-of-limit pass of pumping die temperature pump protective circuit is: this circuit provides two of pumping die temperature protection thresholdings, i.e. high temperature thresholding and low temperature thresholding, and it is controlled by the temperature voltage signal of pumping tube core temperature sensing circuit (2) output.When the pumping die temperature is higher than the low temperature thresholding, and when being lower than the high temperature thresholding, this circuit is exported a turn on pump control level signal, and pumping is opened, can operate as normal; When the pumping die temperature was lower than the low temperature thresholding or is higher than the high temperature thresholding, circuit sent one immediately and closes pump control level signal, closes the drive circuit of pump laser, prevents that pump laser from damaging because of die temperature exceeds maximum operating range.
The essence of the out-of-limit pass of pumping die temperature pump protective circuit is a window voltage comparator.Among Fig. 8, comparator D6, D7 are the voltage comparators with open collector output.Vref is the operating voltage benchmark, comes from reference voltage circuit 1.One termination reference voltage Vref of resistance R 17, the other end be connected with the in-phase input end of comparator D6 again after an end of resistance R 24 links to each other, the other end of resistance R 24 be connected the other end ground connection of resistance R 19 again with the inverting input of comparator D7 after an end of resistance R 19 links to each other.Pumping tube core temperature voltage signal Vtmp is connecting the inverting input of comparator D6 and the in-phase input end of comparator D7.Be connected with an end of resistance R 18 again after the output of comparator D6 and D7 is connected, and output in the pump switch control circuit, in Fig. 8, be denoted as Pump_colse, another termination power end of resistance R 18.
The operation principle of this circuit is as follows:
Among Fig. 8, suppose that the in-phase input end voltage of comparator D6 is Vth, the inverting input voltage of comparator D7 is Vtl, and the output end voltage of comparator D6 is Vpcls.According to electric resistance partial pressure principle, Vth＞Vtl.Because the thermistor as pumping tube core temperature sensor has negative temperature coefficient, the pumping die temperature is high more, and it is just low more that die temperature detects voltage Vtmp.Represent the high temperature threshold voltage with Vtl, Vth represents the low temperature threshold voltage.According to the high temperature thresholding of pumping die temperature, calculate Vtl, according to the low temperature thresholding of pumping die temperature, calculate Vth.Obtain voltage Vth and Vtl by build-out resistor R17, R24, R19.When the pumping die temperature just often, the pumping die temperature is higher than the low temperature thresholding, and be lower than the high temperature thresholding, voltage Vtl＜Vtmp＜Vth, comparator D6, D7 all export high-impedance state (Z) because of in-phase input end voltage is higher than inverting input voltage at this moment, are drawn back Vpcls to be high level (H) state on the resistance R 18.This high level signal makes the pumping operate as normal as the turn on pump control signal of pumping drive circuit.If the pumping die temperature is lower than the low temperature thresholding, then, Vtmp＞Vth, while Vtmp＞Vtl, comparator D7 exports high-impedance state (Z) because of in-phase input end voltage is higher than inverting input voltage, and comparator D6 is lower than inverting input voltage output low level (L) state because of in-phase input end voltage, and this moment, Vpcls was low level state.If the pumping die temperature is higher than the high temperature thresholding, then, Vtmp＜Vtl, while Vtmp＜Vth, comparator D6 exports high-impedance state (Z) because of in-phase input end voltage is higher than inverting input voltage, and comparator D7 is lower than inverting input voltage output low level (L) state because of in-phase input end voltage, and this moment, Vpcls also was low level state.This low level signal can be used as the pass pump control signal of pumping drive circuit, closes pump laser, prevents that pump laser from damaging because of die temperature exceeds maximum operating range.
The present invention has the simplicity of design compactness through checking, the reliability height, and temperature control is accurate, heating and cooling efficient height, plurality of advantages such as the safeguard protection facility is complete is used on product comprehensively.
Though the present invention at length illustrated with and a relevant certain embodiments reference described, those skilled in the art can should be appreciated that, can make various changes in the form and details not deviating from the spirit and scope of the present invention.These change all will fall into claim of the present invention scope required for protection.
Claims (9)
1. an ASE wideband light source is with the automatic temperature control of pump laser, is used at the ASE wideband light source die temperature of pump laser being carried out real-time and effective control, it is characterized in that:
Described control device adopts the design for temperature control system scheme based on proportion integration differentiation control and pulse width modulation driving mechanism, comprising:
Reference voltage circuit (1);
Pumping tube core temperature sensing circuit (2);
Thermoelectric voltage amplifying circuit (3);
Proportional plus integral plus derivative controller (4);
Pumping refrigeration current limitation protection threshold setting circuit (5);
High-efficiency pulse width modulated Control Driver (6);
Pumping semiconductor cooler (7);
The out-of-limit pass of pumping die temperature pump protective circuit (8).
2. automatic temperature control as claimed in claim 1 is characterized in that:
Reference voltage circuit (1) provides all working voltage reference of temperature-control circuit, and all need to comprise in the functional circuit of reference voltage to other:
The voltage stabilizing circuit that resistance (R28) and voltage stabilizing didoe (VD3) are formed;
One termination power (VCC) of resistance (R28), the other end links to each other with the negative pole of voltage stabilizing didoe (VD3), the plus earth of voltage stabilizing didoe (VD3), operational amplifier (D4) is designed to the form of emitter follower, in-phase input end is connected with the negative pole of VD3, and inverting input links to each other with output.
3. automatic temperature control as claimed in claim 2 is characterized in that:
Pumping tube core temperature sensing circuit (2) is a kind of bridge type temperature sensing circuit, the die temperature conversion of signals of pumping is become voltage signal, and producing the determining voltage signal of giving of pump laser target die temperature, it comprises two parts: die temperature test section and die temperature are given certain portions.
4. automatic temperature control as claimed in claim 3 is characterized in that:
The die temperature test section is made up of thermistor (RT), resistance (R1), concrete annexation is: a termination Vref of resistance (R1), the other end is connected with an end of thermistor (RT), the other end ground connection of thermistor (RT), the voltage to earth (Vtmp) of thermistor (RT) is exactly the detection voltage of pumping die temperature;
Die temperature is made of for certain portions resistance (R2), resistance (R4), one termination Vref of resistance (R2), the other end is connected with an end of resistance (R4), the other end ground connection of resistance (R4), and the voltage to earth Vset of resistance (R4) is exactly the given voltage of pumping target die temperature.
5. automatic temperature control as claimed in claim 4 is characterized in that:
Thermoelectric voltage amplifying circuit (3) compares the detectable voltage signals of pumping die temperature and predefined pumping target die temperature to determining voltage signal, and after the voltage difference after relatively amplified, outputs to proportional plus integral plus derivative controller (4); Resistance (R10, R11, R12, R13) formed a differential amplifier circuit with operational amplifier (D1), resistance (R10) end connects the detection voltage (Vtmp) of pumping die temperature, the other end be connected with the inverting input of operational amplifier (D1) again after an end of resistance (R12) is connected, the other end of resistance (R12) is connected with the output of operational amplifier (D1), one end of resistance (R11) connects the given voltage (Vset) of pumping die temperature, the other end be connected with the in-phase input end of operational amplifier (D1) again after an end of resistance (R13) is connected, the other end of resistance (R13) is connected with operating voltage benchmark (Vref).
6. automatic temperature control as claimed in claim 5 is characterized in that:
PID controller (4) is accepted the voltage signal from the output of thermoelectric voltage amplifying circuit, this voltage signal is compared with the given signal of the control of PID controller (Vref), produce pressure difference signal, this pressure difference signal is through behind the pid calculation, generate the control voltage signal, output to high-efficiency pulse width modulated Control Driver (6).
7. automatic temperature control as claimed in claim 6 is characterized in that:
Pumping refrigeration current limitation protection threshold setting circuit (5) comprises two parts: maximum heat current threshold setting circuit, maximum refrigeration current threshold initialization circuit, and resistance (R26, R27), operational amplifier (D9), Schottky diode (VD2) have been formed maximum heat current threshold setting circuit; Resistance (R8, R25), operational amplifier (D8), Schottky diode (VD1) have been formed maximum refrigeration current threshold initialization circuit.
8. automatic temperature control as claimed in claim 7 is characterized in that:
Efficient PWM Control Driver (6) accepts to come from the control voltage (Vpid) of proportional plus integral plus derivative controller output; and under the constraint of two protection threshold voltage values that pumping refrigeration current limitation protection threshold setting circuit is provided with; produce the pulse width modulation drive voltage signal of certain orientation and size; through after the Filtering Processing; be loaded into the two ends of pumping semiconductor cooler 7; in refrigerator, form suitable refrigeration electric current, the pumping die temperature is raise or reduction.
9. automatic temperature control as claimed in claim 8 is characterized in that:
The out-of-limit pass of pumping die temperature pump protective circuit (8) provides two protection thresholdings of pumping die temperature, be high temperature thresholding and low temperature thresholding, it is controlled by the temperature voltage signal of pumping tube core temperature sensing circuit (2) output, when the pumping die temperature is higher than the low temperature thresholding, and when being lower than the high temperature thresholding, this circuit is exported a turn on pump control level signal, and pumping is opened, can operate as normal; When the pumping die temperature was lower than the low temperature thresholding or is higher than the high temperature thresholding, circuit sent one immediately and closes pump control level signal, closes the drive circuit of pump laser, prevents that pump laser from damaging because of die temperature exceeds maximum operating range.
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Address after: 214028 -C plot 93, science and Technology Industrial Park, Wuxi New District, Jiangsu Patentee after: Wuxi dekeli Optoelectronic Technology Co.,Ltd. Address before: 214028 -C plot 93, science and Technology Industrial Park, Wuxi New District, Jiangsu Patentee before: WUXI TACLINK OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |