CN107065963A - A kind of temperature control and protection circuit for semiconductor chilling plate - Google Patents
A kind of temperature control and protection circuit for semiconductor chilling plate Download PDFInfo
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- CN107065963A CN107065963A CN201710407153.1A CN201710407153A CN107065963A CN 107065963 A CN107065963 A CN 107065963A CN 201710407153 A CN201710407153 A CN 201710407153A CN 107065963 A CN107065963 A CN 107065963A
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- G—PHYSICS
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- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
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Abstract
The invention discloses a kind of temperature control for semiconductor chilling plate and protection circuit; including temperature/voltage modular converter, full-bridge temperature control modules, open circuit and overtemperature protection module and short circuit and supercooling protection module; by the working condition of the cooperation control semiconductor chilling plate of above-mentioned modules, the reliable control to target area temperature is realized.The advantage of circuit of the present invention is, a temperature range can be set, interval interior full-bridge temperature control circuit is according to design normal work herein, when target area temperature is less than design temperature interval limit, full-bridge temperature control circuit only heat loop can normal work, refrigerating circuit is closed.Equally, when the target area temperature upper limit interval higher than design temperature, full-bridge temperature control circuit only have refrigerating circuit can normal work, heat loop and be closed.Heated when temperature-sensitive device occurs opening a way or during short-circuit conditions, caused by it or refrigeration action can also be prohibited, reliable temperature control is carried out to the target devices for being mounted with semiconductor chilling plate so as to realize.
Description
Technical field
The invention belongs to electronic technology field, more particularly to a kind of temperature control and protection circuit for semiconductor chilling plate.
Background technology
Semiconductor chilling plate is a kind of device with paltie effect, also known as thermo-electrically effect, when anti-by its electric current
Exchange also occurs in Xiang Shi, its cold end and hot junction, easy to control flexible, with small volume, noiseless, vibrationless feature, quilt
It is widely used in the electronic device for needing constant temperature to work, such as laser, photodetector.And this kind of laser, photoelectricity are visited
Surveying device etc. often has value high, and the characteristics of requiring high to control reliability needs supporting temperature-sensitive device (such as temperature-sensitive in the application
Resistance) target area temperature is monitored, once governor circuit because of element fault or temperature-sensitive device because a variety of causes occurs
Situation out of control just occurs in short circuit or the situation of open circuit, traditional temperature control circuit, causes laser, photodetector etc. to damage
Serious consequence.
The content of the invention
In order to overcome the deficiencies in the prior art, it is an object of the invention to provide a kind of temperature control for semiconductor chilling plate
And protection circuit, easily there is exception and the problem of cause device failure to solve original temperature control circuit.
In order to solve the above technical problems, the technical solution adopted by the present invention is as follows：
A kind of temperature control and protection circuit for semiconductor chilling plate, the temperature control and protection circuit include：Temperature/voltage
Modular converter, full-bridge temperature control modules, open circuit and overtemperature protection module, and short circuit and supercooling protection module, wherein,
The temperature/voltage modular converter, connects the full-bridge temperature control modules, open circuit and overtemperature protection mould respectively
Block, and short circuit and supercooling protection module, the temperature of the temperature/voltage modular converter, in real time detection target area, and by temperature
Degree signal is converted to after voltage signal, is sent respectively to the full-bridge temperature control modules, open circuit and overtemperature protection module, and
Short circuit and supercooling protection module；
The full-bridge temperature control modules, connect the temperature/voltage modular converter, open circuit and overtemperature protection mould respectively
Block, short circuit and supercooling protection module, and the semiconductor chilling plate in target area to be measured, the full-bridge temperature control mould
Block is used for the preferred temperature value in sets target region, and the voltage sent according to the temperature/voltage modular converter of reception is believed
Number it is compared, and then temperature adjustment, the full-bridge temperature control mould is carried out to the semiconductor chilling plate in target area to be measured
Block also receives the open circuit and overtemperature protection module, the command signal control heating of short circuit and supercooling protection module transmission or freezed
Operation；
The open circuit and overtemperature protection module, connect the temperature/voltage modular converter, and full-bridge temperature control respectively
Module, the open circuit and overtemperature protection module are used for the maximum temperature limiting value in sets target region, and according to reception
The voltage signal that temperature/voltage modular converter is sent is compared, when the maximum temperature limiting value of actual temperature higher than setting
Or the temperature signal collection device of target area is when opening a way, the finger for stopping heating being sent to the full-bridge temperature control modules
Order；
Short circuit and the supercooling protection module, connects the temperature/voltage modular converter, and full-bridge temperature control respectively
Module, short circuit and the supercooling protection module is used for the minimum temperature limiting value in sets target region, and according to reception
The voltage signal that temperature/voltage modular converter is sent is compared, when the minimum temperature limiting value of actual temperature less than setting
Or target area temperature signal collection device occur short circuit when, to the full-bridge temperature control modules send stop refrigeration finger
Order.
Further, the temperature/voltage modular converter includes thermistor, divider resistance and voltage follower composition
Circuit, wherein, described divider resistance one end connects accurate reference voltage, and the other end connects one end and the electricity of thermistor simultaneously
The in-phase input end of follower is pressed, the other end ground connection of the thermistor, the thermistor is arranged at target area to be measured
It is interior.
Further, the full-bridge temperature control modules include first resistor and the preferred temperature setting that preferred temperature is set
Second resistance, first voltage comparator, heat loop and refrigerating circuit, wherein, first, second electricity set by preferred temperature
The preferred temperature equivalent voltage value that resistance partial pressure is obtained is connected to the inverting input of first voltage comparator, actual measurement temperature
Equivalent voltage value is connected to the in-phase input end of first voltage comparator, and the output end of first voltage comparator also connects system simultaneously
Hot loop and refrigerating circuit.
Further, the loop that heats includes driven in phase device, the first current-limiting resistance, the first metal-oxide-semiconductor and the 2nd MOS
Pipe, wherein, the grid of first, second metal-oxide-semiconductor links together, and is connected in series to by first current-limiting resistance with mutually drive
The output end of dynamic device, the drain electrode of the first metal-oxide-semiconductor is connected to temperature control voltage source, the source electrode connection semiconductor chilling plate of the first metal-oxide-semiconductor
Negative pole, the second metal-oxide-semiconductor drain electrode connection semiconductor chilling plate positive pole, the source ground of the second metal-oxide-semiconductor；The refrigerating circuit
Including rp-drive, the second current-limiting resistance, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor, wherein, the grid of the three, the 4th metal-oxide-semiconductor
Pole is linked together, and the output end of reverse driven is connected in series to by the second current-limiting resistance, and the drain electrode of the 3rd metal-oxide-semiconductor is connected to temperature
Voltage source is controlled, the source electrode of the 3rd metal-oxide-semiconductor connects the positive pole of semiconductor chilling plate, the drain electrode connection semiconductor refrigerating of the 4th metal-oxide-semiconductor
The negative pole of piece, the source ground of the 4th metal-oxide-semiconductor.
Further, the open circuit and overtemperature protection module include overtemperature protection setting first resistor and overtemperature protection is set
Second resistance, second voltage comparator and the first clamp diode, by overtemperature protection set first, second resistance partial pressure and
Obtained limit high temperature equivalent voltage value is connected to the inverting input of second voltage comparator, the equivalent electric of actual measurement temperature
Pressure value is connected to the in-phase input end of second voltage comparator, output the first clamp diode of connection of second voltage comparator
Negative electrode, the anode of the first clamp diode is connected to the grid of first, second metal-oxide-semiconductor.
Further, the open circuit and overtemperature protection module also include open-circuit-protection setting first resistor and open-circuit-protection is set
Second resistance, tertiary voltage comparator and the second clamp diode are put, first, second electric resistance partial pressure is set by open-circuit-protection and obtained
To open-circuit-protection magnitude of voltage be connected to the in-phase input end of tertiary voltage comparator, the equivalent voltage value of actual measurement temperature connects
The inverting input of tertiary voltage comparator is connected to, the output of tertiary voltage comparator connects the negative electrode of the second clamp diode,
The anode of second clamp diode is connected to the grid of first, second metal-oxide-semiconductor, wherein, the overtemperature protection sets the
Two resistance and open-circuit-protection set the second resistance other end to be grounded respectively.
Preferably, in the open circuit and overtemperature protection module, the open-circuit-protection sets the resistance of second resistance to be much larger than
Open-circuit-protection sets the resistance of first resistor.
Further, short circuit and the supercooling protection module includes supercooling protection setting first resistor and supercooling protection setting
Obtained from second resistance, the 4th voltage comparator and the 3rd clamp diode, the supercooling electric resistance partial pressure of protection setting first, second
Limit low temperature equivalent voltage value is connected to the in-phase input end of the 4th voltage comparator, and the equivalent voltage value of actual measurement temperature connects
The inverting input of the 4th voltage comparator is connected to, the output of the 4th voltage comparator connects the negative electrode of the 3rd clamp diode,
The anode of 3rd clamp diode is connected to the grid of the three, the 4th metal-oxide-semiconductors.
Further, short circuit and the supercooling protection module also includes short-circuit protection setting first resistor and short-circuit protection is set
Second resistance, the 5th voltage comparator and the 4th clamp diode are put, short-circuit protection sets first, second electric resistance partial pressure and obtained
Short-circuit protection magnitude of voltage be connected to the inverting input of the 5th voltage comparator, the equivalent voltage value connection of actual measurement temperature
To the in-phase input end of the 5th voltage comparator, the output of the 5th voltage comparator connects the negative electrode of the 4th clamp diode, the
The anode of four clamp diodes is connected to the grid of the three, the 4th metal-oxide-semiconductors.
Preferably, in the short circuit and supercooling protection module, the short-circuit protection sets the resistance of first resistor remote
More than the resistance that short-circuit protection sets second resistance.
Compared with prior art, the present invention is thermostatically controlled to target area same by controlling semiconductor chilling plate to realize
When, the judgement to temperature control system unusual condition can be realized and corresponding protection control is made, greatly reduced because of circuit problem
Or misoperation and to target devices cause damage probability.
Brief description of the drawings
Fig. 1 is the temperature control for semiconductor chilling plate and the structure principle chart of protection circuit described in the embodiment of the present invention；
Fig. 2 is the circuit diagram of the temperature/voltage modular converter described in the embodiment of the present invention；
Fig. 3 is the circuit diagram of the full-bridge temperature control modules described in the embodiment of the present invention；
Fig. 4 is the open circuit and the circuit diagram of overtemperature protection module described in the embodiment of the present invention；
Fig. 5 is short-circuit and supercooling protection module the circuit diagram described in the embodiment of the present invention.
Embodiment
The following examples are only intended to illustrate the technical solution of the present invention more clearly, and can not limit the present invention with this
Protection domain.Some vocabulary have such as been used to censure parts, those skilled in the art among specification and claim
, it is to be appreciated that parts manufacturing firm may call same part with different nouns.This specification and claims are simultaneously
Not in the way of the difference of title is used as differentiation part, but the criterion of differentiation is used as using the difference of part functionally.Say
Bright book subsequent descriptions for implement the present invention better embodiment, it is described be by illustrate the present invention rule for the purpose of,
It is not limited to the scope of the present invention.Protection scope of the present invention is worked as to be defined depending on the appended claims person of defining.
The present invention is described in further details with specific embodiment below in conjunction with the accompanying drawings.
Referring to the drawings shown in 1, a kind of temperature control and protection circuit for semiconductor chilling plate described in the embodiment of the present invention,
Including：Temperature/voltage modular converter 1, full-bridge temperature control modules 2, open circuit and overtemperature protection module 3, and short circuit and supercooling
Protection module 4, wherein,
The temperature/voltage modular converter 1, connects the full-bridge temperature control modules 2, open circuit and overtemperature protection mould respectively
Block 3, and short circuit and supercooling protection module 4, the temperature of the temperature/voltage modular converter 1, in real time detection target area, and
Temperature signal is converted to after voltage signal, the full-bridge temperature control modules 2, open circuit and overtemperature protection module is sent respectively to
3, and short circuit and supercooling protection module 4；
The full-bridge temperature control modules 2, connect the temperature/voltage modular converter 1, open circuit and overtemperature protection mould respectively
Block 3, short circuit and supercooling protection module 4, and the semiconductor chilling plate in target area to be measured, the full-bridge temperature control
Module 2 is used for the preferred temperature value in sets target region, and the electricity sent according to the temperature/voltage modular converter 1 of reception
Pressure signal is compared, and then carries out temperature adjustment to the semiconductor chilling plate in target area to be measured, and its temperature adjustment includes
Heating is freezed, and the full-bridge temperature control modules 2 also receive the open circuit and overtemperature protection module 3, short circuit and supercooling protection
Command signal control heating or the operation of refrigeration that module 4 is sent；
The open circuit and overtemperature protection module 3, connect the temperature/voltage modular converter 1, and full-bridge temperature control respectively
Molding block 2, the open circuit and overtemperature protection module 3 are used for the maximum temperature limiting value in sets target region, and according to reception
The voltage signal that the temperature/voltage modular converter 1 is sent is compared, when the maximum temperature pole of actual temperature higher than setting
When limit value or the temperature signal collection device of target area are opened a way, send stopping to the full-bridge temperature control modules 2 and add
The instruction of heat；
Short circuit and the supercooling protection module 4, connects the temperature/voltage modular converter 1, and full-bridge temperature control respectively
Molding block 2, short circuit and the supercooling protection module 4 is used for the minimum temperature limiting value in sets target region, and according to reception
The voltage signal that the temperature/voltage modular converter 1 is sent is compared, when the minimum temperature pole of actual temperature less than setting
When short circuit occur in limit value or the temperature signal collection device of target area, stopping system being sent to the full-bridge temperature control modules 2
Cold instruction.
Fig. 2 show the circuit of the temperature/voltage modular converter in the embodiment of the present invention, and effect is by target area in Fig. 1
The actual temperature in domain is converted into voltage signal, and thermistor Rt is the temperature-sensitive device for being placed on target area, is herein negative temperature
Coefficient resistance, its characteristic is that when the temperature increases, Rt resistance reduces, when the temperature decreases, Rt resistance increase.It is negative
Temperature coefficient thermistor correlation computations formula is as follows：
T:Current Temperatures, absolute temperature, 273.15+ Celsius temperatures
RT:Resistance value under Current Temperatures, ohm
R25:Resistance value at 25 DEG C, ohm
β:Material constant of thermistor
As a preferred embodiment of the present invention, β=3892, R25=10K ohm of negative temperature coefficient is selected in this Rt
Thermistor.R1 is divider resistance, and resistance is 10K ohm.Vref is high-precision reference voltage source, is all partial pressure electricity in system
Road provides stable reference voltage.U1 is operational amplifier, is directly connected to U1 6 pin in this U1 2 pin, is used as voltage follower
Use, play a part of input signal and output signal is isolated and improves output signal driving force.When target area temperature liter
Gao Shi, Rt resistance reduce, and the upper partial pressures of Rt will reduce, so that U1 3 pin input voltages reduction, U1 6 pin output voltages with
Reduction, i.e. Vrt reduce.Conversely, when target area temperature is reduced, Rt resistances increase, the upper partial pressures of Rt can also increase so that U1
The increase of 3 pin input voltages, U1 6 pin output voltages increase therewith, Vrt increases.Vrt is exactly the result of temperature-voltage conversion,
It changes the change for just characterizing target area temperature.
Fig. 3 show the circuit diagram of the full-bridge temperature control modules in the embodiment of the present invention, comprising heating and freeze
Two loops, wherein, the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4 are N-channel MOS pipe, its
Gate pole control voltage is turned on when being high level, is turned off when being low level.U3 is driven in phase device, and U4 is rp-drive, and U2 is
Operational amplifier, is used in this as voltage comparator, and resistance R3 and R4 are used for sets target regional temperature desired value.This implementation
Example sets target regional temperature desired value is 20 DEG C, is calculated according to above-mentioned formula (1) and corresponds to thermosensitive resistance about when obtaining 20 DEG C
For 12.5K ohm, therefore selection resistance R3 is 10K ohm, and R4 is 12.5K ohm.
When voltage Vrt corresponding with target area actual temperature is more than U2 (first voltage comparator) 2 pin voltages, i.e. mesh
When marking region actual temperature less than the temperature desired values set, U2 pin 6 (output end) output high level is connected according to circuit
Relation, driven in phase device U3 output high level, by current-limiting resistance R5, C1 point voltages are high level.And now anti-phase driving
Device U4 then exports low level, by current-limiting resistance R6, and C2 point voltages are low level.Then just have, Q1 and Q2 conductings, Q3 and Q4
Shut-off, heats loop works, electric current flows into semiconductor chilling plate by TEC-, and now semiconductor chilling plate hot junction acts on target area
Domain, raises target area temperature.
Conversely, when Vrt is less than U2 2 pin voltages, i.e. target area actual temperature higher than the temperature desired values set, U2
6 pin output low level, according to circuit connecting relation, driven in phase device U3 output low levels pass through current-limiting resistance R5, C1 points electricity
Pressure is low level.Rp-drive U4 is output as high level simultaneously, and by current-limiting resistance R6, C2 point voltages are high level.
Then just have, Q1 and Q2 shut-offs, Q3 and Q4 conductings, refrigerating circuit work, electric current flow into semiconductor chilling plate by TEC+, now partly
Conductor cooling piece cold end acts on target area, reduces target area temperature.
The alternation of loop and refrigerating circuit is heated, in theory target area actual temperature can be made infinitely to approach setting
Temperature desired values, so as to realize the thermostatically controlled target in target area.
Fig. 4 show the open circuit in the embodiment of the present invention and the circuit of overtemperature protection module, and U5, U6 are operational amplifier,
Used in this as voltage comparator, D1, D2 are clamp diode, R7 and R7 ' are that open-circuit-protection sets resistance, and R8 and R8 ' are
Overtemperature protection sets resistance.Herein for convenience of describing, it is that tertiary voltage comparator, U6 are second voltage comparator, D1 to define U5
For the first clamp diode, D2 is the second clamp diode, and R7 is that open-circuit-protection sets first resistor, and R7 ' sets for open-circuit-protection
Second resistance is put, R8 is that overtemperature protection sets first resistor, and R8 ' is that overtemperature protection sets second resistance.
The present embodiment sets overtemperature protection temperature as 40 DEG C, and correspondence thermistor when obtaining 40 DEG C is calculated according to formula (1)
About 5.4K ohm of value, therefore selection resistance R8 is 10K ohm, R8 ' is 5.4K ohm.When target area temperature is not above 40
DEG C when, Rt resistance is calculated according to formula (1) in Fig. 2 can be more than 5.4K, then Vrt can be more than Vb point voltages, i.e., the 3 of U6 in Fig. 4
Pin voltage is more than 2 pin voltages, and U6 is output as high level, and now diode D2 has blocking effect, and C1 points voltage is not by the 6 of U6
Pin high level influences.Rt resistance is calculated according to formula (1) when target area temperature is more than 40 DEG C, in Fig. 2 can be less than 5.4K,
Then Vrt can be less than Vb point voltages in Fig. 4, i.e. the 3 pin voltages of U6 are less than 2 pin voltages, and U6 is output as low level, now diode
D2 has clamping action so that the voltage of C1 points all can be low level under any circumstance, is in so that heating loop in Fig. 3
Off state, it is to avoid the situation for continuing to heat occurs, and serves the effect of overtemperature protection.
When open circuit situation occurs in thermistor Rt in Fig. 2, U1 3 pin voltages are equal to Vref, then just have Vrt to be equal to
Vref, so in Fig. 3 circuit, U2 3 pin voltages can be more than U2 2 pin voltages all the time, so U2 6 pin output is all the time
High level, as described above, C1 points voltage can be high level all the time, and C2 points voltage can be all the time low level, so as to cause to heat back
Road is constantly on, causes target area temperature persistently to raise, the final consequence for damaging component.In order to solve this problem,
Resistance R7 ' is selected to be much larger than resistance R7 in Fig. 4, such as R7 is 10K ohm, and R7 ' is 1M ohm so that Va point voltages are slightly less than
Vref, when Rt opens a way, Vrt is equal to Vref, and the 3 pin voltages for then just having U5 in Fig. 4 are slightly less than 2 pin voltages, make U5
6 pin voltage outputs be low level, by diode D1 clamping action, C1 point voltages is clamped at low level, though because
Cause U3 in Fig. 3 to be output as high level for Rt open circuits, the voltage of C1 points can not also be raised by resistance R5, Q1 and Q2 are protected always
Off state is held, so as to avoid wrong situation about heating with device failure.Here it must select open-circuit-protection that the second electricity is set
The resistance that R7 ' resistances set first resistor R7 much larger than open-circuit-protection is hindered, the normal heat-production functions of temperature control circuit otherwise can be influenceed,
And the resistance that open-circuit-protection sets second resistance R7 ' resistances to be much larger than open-circuit-protection setting first resistor R7 can guarantee that and heat just
Chang Anquan is carried out.
Fig. 5 show the short circuit in the embodiment of the present invention and the circuit of supercooling protection module, and U7, U8 are operational amplifier,
Used in this as voltage comparator, D3, D4 are clamp diode, R9 and R9 ' are supercooling protection setting resistance, R10 and R10 '
For short-circuit protection, resistance is set.Here, for convenience of description, definition U7 is the 4th voltage comparator, U8 is the 5th voltage comparator,
D3 is the 3rd clamp diode, and D4 is the 4th clamp diode, and R9 is supercooling protection setting first resistor, and R9 ' protects for supercooling
Second resistance is set, and R10 is that short-circuit protection sets first resistor, and R10 ' is that short-circuit protection sets second resistance.
The present embodiment sets supercooling protection temperature as -10 DEG C, and correspondence temperature-sensitive electricity when obtaining -10 DEG C is calculated according to formula (1)
Resistance is about 56K ohm, therefore selection resistance R9 is 10K ohm, and R9 ' is 56K ohm.When target area temperature is higher than -10 DEG C
When, Rt resistance is calculated according to formula (1) in Fig. 2 can be less than 56K ohm, then Vrt can be less than Vc point voltages, i.e., the 2 of U7 in Fig. 5
Pin voltage is less than 3 pin voltages, and U7 is output as high level, and now diode D3 has blocking effect, and C2 points voltage is not by the 6 of U7
Pin high level influences.Rt resistance is calculated according to formula (1) when target area temperature is less than -10 DEG C, in Fig. 2 can be more than 56K
Ohm, then Vrt can be more than Vc point voltages in Fig. 5, i.e. the 2 pin voltages of U7 are more than 3 pin voltages, and U7 is output as low level, now
Diode D2 has clamping action so that the voltage of C2 points all can be low level under any circumstance, so that freezing back in Fig. 3
Road is off state, it is to avoid the situation for continuing to freeze occurs, and serves the effect of supercooling protection.
When short-circuit conditions occurs in thermistor Rt in Fig. 2, U1 3 pin voltages are equal to GND, then just have Vrt to be equal to
GND, so in Fig. 3 circuit, U2 3 pin voltages can be less than U2 2 pin voltages all the time, so U2 6 pin output is all the time
Low level, as described above, C1 points voltage can be low level all the time, and C2 points voltage can be all the time high level, so as to cause to freeze back
Road is constantly on, consequence out of control is caused, in the case of radiating condition is imperfect, it is also possible to cause the damage of device.In order to
This problem is solved, selects resistance R10 ' to be much smaller than resistance R10 in Figure 5, such as R10 is 10K ohm, and R10 ' is 100 ohm, is made
Obtain Vd points voltage and be slightly larger than GND, when short circuit occurs in Rt, Vrt is equal to GND, then just there are U8 2 pin voltages bigger in Figure 5
In 3 pin voltages so that U8 6 pin voltage outputs are low level, by diode D4 clamping action, are clamped C2 point voltages
In low level, even if because Rt short circuits cause U4 in Fig. 3 to be output as high level, the electricity of C2 points can not be also raised by resistance R6
Pressure, Q3 and Q4 are always maintained at off state, so as to avoid the situation of mistake refrigeration and device failure.Here short circuit must be selected
Protection second sets resistance R10 ' resistances to set first resistor R10 resistance much smaller than short-circuit protection, otherwise can influence temperature control electricity
The normal refrigerating function in road, and short-circuit protection second sets resistance R10 ' resistances to set first resistor R10 much smaller than short-circuit protection
Resistance also ensure that refrigerating function it is normal safety carry out.
In summary, the advantage of circuit of the present invention is, can set a temperature range (such as -10 DEG C to 40 DEG C),
Full-bridge temperature control circuit is according to design normal work in this interval, and when target area temperature is less than -10 DEG C, full-bridge temperature control circuit is only
Heat loop can normal work, refrigerating circuit is closed.Equally, when target area temperature is higher than 40 DEG C, full-bridge temperature control electricity
Road only have refrigerating circuit can normal work, heat loop and be closed.When thermistor occurs opening a way or during short-circuit conditions, it causes
Heat or refrigeration action can also be prohibited, reliable temperature is carried out to the target devices for being mounted with semiconductor chilling plate so as to realize
Control.Certainly, actual design temperature interval can be adjusted according to the demand of different circuits.
Compared with prior art, the present invention is thermostatically controlled to target area same by controlling semiconductor chilling plate to realize
When, the judgement to temperature control system unusual condition can be realized and corresponding protection control is made, greatly reduced because of circuit problem
Or misoperation and to target devices cause damage probability.
It is worth noting that, the foregoing is only presently preferred embodiments of the present invention, the patent of the present invention is not thereby limited
Protection domain, the present invention can also carry out the improvement of material and structure to the construction of above-mentioned various parts, or use skill
Art equivalent is replaced.Therefore it is all with the present invention specification and diagramatic content made equivalent structure change, or directly or
Apply to other correlative technology fields indirectly to be similarly all contained in the range of of the invention cover.
Claims (10)
1. a kind of temperature control and protection circuit for semiconductor chilling plate, it is characterised in that the temperature control and protection circuit include：
Temperature/voltage modular converter, full-bridge temperature control modules, open circuit and overtemperature protection module, and short circuit and supercooling protection module,
Wherein,
The temperature/voltage modular converter, connects the full-bridge temperature control modules, open circuit and overtemperature protection module respectively, with
And short circuit and supercooling protection module, the temperature of the temperature/voltage modular converter, in real time detection target area, and temperature is believed
Number be converted to after voltage signal, be sent respectively to the full-bridge temperature control modules, open circuit and overtemperature protection module, and short circuit
And supercooling protection module；
The full-bridge temperature control modules, connect the temperature/voltage modular converter, open circuit and overtemperature protection module, short respectively
Road and supercooling protection module, and the semiconductor chilling plate in target area to be measured, the full-bridge temperature control modules are used
Preferred temperature value in sets target region, and entered according to the voltage signal of the temperature/voltage modular converter of reception transmission
Row is compared, and then carries out temperature adjustment to the semiconductor chilling plate in target area to be measured, and the full-bridge temperature control modules are also
Receive the behaviour of the open circuit and overtemperature protection module, the command signal control heating of short circuit and supercooling protection module transmission or refrigeration
Make；
The open circuit and overtemperature protection module, connect the temperature/voltage modular converter, and full-bridge temperature control mould respectively
Block, the open circuit and overtemperature protection module are used for the maximum temperature limiting value in sets target region, and according to the temperature of reception
The voltage signal that degree/voltage transformation module is sent is compared, when actual temperature higher than the maximum temperature limiting value of setting or
When the temperature signal collection device of person target area is opened a way, the finger for stopping heating being sent to the full-bridge temperature control modules
Order；
Short circuit and the supercooling protection module, connects the temperature/voltage modular converter, and full-bridge temperature control mould respectively
Block, short circuit and the supercooling protection module is used for the minimum temperature limiting value in sets target region, and according to the temperature of reception
The voltage signal that degree/voltage transformation module is sent is compared, when actual temperature less than the minimum temperature limiting value of setting or
When short circuit occurs in the temperature signal collection device of person target area, the finger for stopping refrigeration being sent to the full-bridge temperature control modules
Order.
2. it is used for temperature control and the protection circuit of semiconductor chilling plate as claimed in claim 1, it is characterised in that the temperature/
Voltage transformation module includes the circuit of thermistor, divider resistance and voltage follower composition, wherein, described divider resistance one end
Accurate reference voltage is connected, the other end connects one end of thermistor and the in-phase input end of voltage follower simultaneously, described
The other end ground connection of thermistor, the thermistor is arranged in target area to be measured.
3. it is used for temperature control and the protection circuit of semiconductor chilling plate as claimed in claim 1, it is characterised in that the full-bridge temperature
Spend control module include preferred temperature set first resistor and preferred temperature set second resistance, first voltage comparator,
Loop and refrigerating circuit are heated, wherein, the preferred temperature equivalent electric that first, second electric resistance partial pressure set by preferred temperature is obtained
Pressure value is connected to the inverting input of first voltage comparator, and the equivalent voltage value of actual measurement temperature is connected to first voltage ratio
Compared with the in-phase input end of device, also connection heats loop and refrigerating circuit to the output end of first voltage comparator simultaneously.
4. it is used for temperature control and the protection circuit of semiconductor chilling plate as claimed in claim 3, it is characterised in that described to heat back
Road includes driven in phase device, the first current-limiting resistance, the first metal-oxide-semiconductor and the second metal-oxide-semiconductor, wherein, first, second metal-oxide-semiconductor
Grid links together, and is connected in series to by first current-limiting resistance output end of driven in phase device, the drain electrode of the first metal-oxide-semiconductor
Temperature control voltage source is connected to, the source electrode of the first metal-oxide-semiconductor connects the negative pole of semiconductor chilling plate, the drain electrode connection half of the second metal-oxide-semiconductor
The positive pole of conductor cooling piece, the source ground of the second metal-oxide-semiconductor；The refrigerating circuit include rp-drive, the second current-limiting resistance,
3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor, wherein, the grid of the three, the 4th metal-oxide-semiconductor links together, and passes through the second current-limiting resistance
The output end of reverse driven is connected in series to, the drain electrode of the 3rd metal-oxide-semiconductor is connected to temperature control voltage source, the source electrode connection of the 3rd metal-oxide-semiconductor
The positive pole of semiconductor chilling plate, the negative pole of the drain electrode connection semiconductor chilling plate of the 4th metal-oxide-semiconductor, the source ground of the 4th metal-oxide-semiconductor.
5. as claimed in claim 4 for semiconductor chilling plate temperature control and protection circuit, it is characterised in that the open circuit and
Overtemperature protection module includes overtemperature protection and sets first resistor and overtemperature protection to set second resistance, second voltage comparator and the
One clamp diode, limit high temperature equivalent voltage value connects as obtained from overtemperature protection sets first, second resistance partial pressure
The inverting input of second voltage comparator is connected to, the equivalent voltage value of actual measurement temperature is connected to second voltage comparator
In-phase input end, the negative electrode of output the first clamp diode of connection of second voltage comparator, the anode of the first clamp diode
It is connected to the grid of first, second metal-oxide-semiconductor.
6. as claimed in claim 4 for semiconductor chilling plate temperature control and protection circuit, it is characterised in that the open circuit and
Overtemperature protection module also include open-circuit-protection set first resistor and open-circuit-protection set second resistance, tertiary voltage comparator and
Second clamp diode, the open-circuit-protection magnitude of voltage as obtained from open-circuit-protection sets first, second electric resistance partial pressure is connected to the
The in-phase input end of three voltage comparators, the equivalent voltage value of actual measurement temperature is connected to the anti-phase defeated of tertiary voltage comparator
Enter end, the negative electrode of output the second clamp diode of connection of tertiary voltage comparator, the anode of the second clamp diode is connected to
The grid of first, second metal-oxide-semiconductor, wherein, the overtemperature protection sets second resistance and open-circuit-protection to set the second electricity
The resistance other end is grounded respectively.
7. as claimed in claim 6 for semiconductor chilling plate temperature control and protection circuit, it is characterised in that the open circuit and
In overtemperature protection module, the resistance of the open-circuit-protection second resistance is significantly larger than the resistance of open-circuit-protection first resistor.
8. as claimed in claim 4 for semiconductor chilling plate temperature control and protection circuit, it is characterised in that it is described short circuit and
Protection module, which is subcooled, includes supercooling protection setting first resistor and supercooling protection setting second resistance, the 4th voltage comparator and the
Three clamp diodes, limit low temperature equivalent voltage value obtained from the supercooling electric resistance partial pressure of protection setting first, second is connected to the
The in-phase input end of four voltage comparators, the equivalent voltage value of actual measurement temperature is connected to the anti-phase defeated of the 4th voltage comparator
Enter end, the negative electrode of output the 3rd clamp diode of connection of the 4th voltage comparator, the anode of the 3rd clamp diode is connected to
The grid of three, the 4th metal-oxide-semiconductors.
9. as claimed in claim 4 for semiconductor chilling plate temperature control and protection circuit, it is characterised in that it is described short circuit and
Be subcooled protection module also include short-circuit protection set first resistor and short-circuit protection set second resistance, the 5th voltage comparator and
4th clamp diode, short-circuit protection magnitude of voltage obtained from short-circuit protection sets first, second electric resistance partial pressure is connected to the 5th
The inverting input of voltage comparator, the equivalent voltage value of actual measurement temperature is connected to the homophase input of the 5th voltage comparator
End, the negative electrode of output the 4th clamp diode of connection of the 5th voltage comparator, the anode of the 4th clamp diode is connected to the
3rd, the grid of the 4th metal-oxide-semiconductor.
10. it is used for temperature control and the protection circuit of semiconductor chilling plate as claimed in claim 9, it is characterised in that described short
In road and supercooling protection module, the short-circuit protection sets the resistance of first resistor to be significantly larger than short-circuit protection and sets second resistance
Resistance.
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| CN201710407153.1A CN107065963A (en) | 2017-06-02 | 2017-06-02 | A kind of temperature control and protection circuit for semiconductor chilling plate |
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