CN108563260B - High-precision temperature control circuit with DAC constant current circuit - Google Patents

High-precision temperature control circuit with DAC constant current circuit Download PDF

Info

Publication number
CN108563260B
CN108563260B CN201810810108.5A CN201810810108A CN108563260B CN 108563260 B CN108563260 B CN 108563260B CN 201810810108 A CN201810810108 A CN 201810810108A CN 108563260 B CN108563260 B CN 108563260B
Authority
CN
China
Prior art keywords
resistor
capacitor
operational amplifier
circuit
mos tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201810810108.5A
Other languages
Chinese (zh)
Other versions
CN108563260A (en
Inventor
洪汉润
焦刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WUHAN GIGAA OPTRONICS TECHNOLOGY CO LTD
Original Assignee
WUHAN GIGAA OPTRONICS TECHNOLOGY CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WUHAN GIGAA OPTRONICS TECHNOLOGY CO LTD filed Critical WUHAN GIGAA OPTRONICS TECHNOLOGY CO LTD
Priority to CN201810810108.5A priority Critical patent/CN108563260B/en
Publication of CN108563260A publication Critical patent/CN108563260A/en
Application granted granted Critical
Publication of CN108563260B publication Critical patent/CN108563260B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00Control of temperature
    • G05D23/19Control of temperature characterised by the use of electric means
    • G05D23/20Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • G05D23/24Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Control Of Temperature (AREA)

Abstract

The invention relates to a temperature control circuit, belongs to the field of laser equipment, and particularly relates to a high-precision temperature control circuit with a DAC constant current circuit. The method comprises the following steps: the NTC temperature measuring circuit is connected with the laser and used for measuring the temperature of the laser and transmitting the measured data to the singlechip; the single chip microcomputer is used for receiving temperature data measured by the NTC temperature measuring circuit and controlling the TEC heat energy converter to work through the H-bridge circuit and the DAC constant current circuit; the laser is connected with the TEC heat energy converter; therefore, the invention has the following advantages: under the condition of higher requirement on the stability of the output power, the power fluctuation is smaller, the laser can be better protected, and the service life of the laser can be prolonged.

Description

High-precision temperature control circuit with DAC constant current circuit
Technical Field
The invention relates to a temperature control circuit, belongs to the field of laser equipment, and particularly relates to a high-precision temperature control circuit with a DAC constant current circuit.
Background
As a core component applied to laser equipment, in order to protect a laser and prolong the service life of the laser, the working and storage environments of the laser have strict temperature requirements. In addition, the output power of the laser is greatly influenced by temperature fluctuation, and in order to ensure that the laser can achieve reliable and stable power output when working, the high-precision bidirectional automatic temperature control circuit is designed, so that the stability and the reliability of the system performance are improved.
Disclosure of Invention
The invention mainly solves the problem that the power fluctuation of the traditional unidirectional TEC refrigeration temperature control is large under the condition that the requirement on the stability of the output power of an extremely temperature-sensitive laser in the prior art is high, and provides a high-precision temperature control circuit with a DAC constant current circuit, which can better protect the laser and prolong the service life of the laser.
The technical problem of the invention is mainly solved by the following technical scheme:
a high-precision temperature control circuit with a DAC constant current circuit comprises:
the NTC temperature measuring circuit is connected with the laser and used for measuring the temperature of the laser and transmitting the measured data to the singlechip;
the single chip microcomputer is used for receiving temperature data measured by the NTC temperature measuring circuit and controlling the TEC heat energy converter to work through the H-bridge circuit and the DAC constant current circuit;
the laser is connected with the TEC heat energy converter;
wherein the H-bridge circuit comprises:
an H bridge upset control circuit for control H bridge circuit upset specifically includes: an equidirectional input end of the operational amplifier U1 is respectively connected with the R5, the capacitor C3 and the resistor R4, the capacitor C3 and the resistor R5 are grounded after being connected in parallel, and the resistor R4 is connected with a power supply VCC; the reverse input end of the single-chip microcomputer is connected with an I/O port of the single-chip microcomputer through a resistor R2; the output end of the operational amplifier is connected with a resistor R1, a resistor R30 and a capacitor C2, the capacitor C2 is grounded, and the resistor R1 is connected with the reverse input end of the operational amplifier U1; the anode of the capacitor is connected with a power supply VCC and is grounded through a capacitor C1, and the cathode of the capacitor is grounded;
an H bridge controlled circuit, be controlled by H bridge upset control circuit specifically includes:
the MOS tube Q1, the MOS tube Q2, the MOS tube Q3 and the MOS tube Q4 are connected, and the gate electrodes of the MOS tube Q1 and the MOS tube Q3 are connected with the heating output end HOT of the H-bridge inverting conversion circuit through a triode Q6; the MOS tube Q2 is connected with the gate of the MOS tube Q4 and then is connected with the refrigerating output end COL of the H-bridge inverting control circuit through a triode Q5; the source set of the MOS transistor Q1 is connected with the drain electrode of the MOS transistor Q3; the source set of the MOS transistor Q2 is connected with the drain electrode of the MOS transistor Q4; a diode D2, a diode D3, a diode D4 and a diode D5 are respectively connected between the source and the drain of the MOS tube Q1, the MOS tube Q2, the MOS tube Q3 and the MOS tube Q4; the anode of the diode D2 and the cathode of the diode D4 are connected with one end of a capacitor C24, and the other end of the capacitor C24 is connected with the anode of a diode D3 and the cathode of a diode D5; the capacitor C24 is connected with the capacitor C25 and the resistor R29 in parallel; and two ends of the capacitor C24 are connected with an input end P5 of the TEC thermal energy converter.
Wherein, DAC constant current circuit includes:
a DAC amplification circuit, comprising: an equidirectional input end of the operational amplifier U1A is connected with a resistor R16, a capacitor C17 and a resistor R12, wherein one end of the resistor R12 is connected with an output port of the singlechip; the reverse input end of the operational amplifier U1A is connected with a resistor R11 and a resistor R9, the resistor R11 is grounded, and the resistor R9 is connected with the output end of the operational amplifier U1A;
the DAC constant current circuit comprises an operational amplifier U3, wherein the equidirectional input end of the operational amplifier U3 is connected with a capacitor C9, a resistor R20, a resistor R21 and an adjustable resistor W1; the capacitor C19 and the resistor R20 are grounded, and the adjustable resistor is connected with the output end of the DAC amplifying circuit; the reverse input end of the operational amplifier U3 is connected in series with a resistor R6, a capacitor C4 and a resistor R18 and then grounded; one end of the resistor R18 is connected with the output end of the operational amplifier U3, the resistor R15, the resistor R15, the MOS transistor M1 and the resistor R22 are connected in series, and then the resistor R21 is connected with the reverse input end of the operational amplifier U3; the positive stage of the operational amplifier U3 is connected with a 12V power supply through a resistor R10, and the positive electrode of the operational amplifier U3 is grounded through a capacitor C6 and a capacitor C8 respectively.
Wherein, NTC temperature measurement circuit includes: a controllable precise voltage-stabilizing source TLV431, wherein a resistor R117 is connected between pins 1 and 2, a resistor R119 is connected between pins 1 and 3, and the pin 3 is grounded; a pin 2 of the resistor R116 is connected with a resistor R116, and one end of the resistor R116 is connected with a 12V power supply and is grounded through a capacitor C80; a pin 2 of the controllable precision voltage stabilizing source TLV431 is connected with a 4.5V power supply and a resistor R118, and one end of the resistor R118 is grounded through a capacitor C82; one end of the resistor R118 is connected with the equidirectional input end of the operational amplifier U16A, and the inverted input end of the operational amplifier U16A is connected with the output end thereof and is grounded through the resistor R120 and the capacitor C83; one end of the resistor R120 is connected with an AD port of the singlechip; the positive stage of the operational amplifier U16A is connected to a 5V power supply and to ground through a capacitor C81.
Therefore, the invention has the following advantages: under the condition of higher requirement on the stability of the output power, the power fluctuation is smaller, the laser can be better protected, and the service life of the laser can be prolonged.
Drawings
FIG. 1 is a schematic diagram of the present invention;
FIG. 2 is a schematic diagram of an NTC temperature measurement circuit of the present invention;
FIG. 3 is a schematic diagram of an H-bridge flip control circuit according to the present invention;
FIG. 4 is an H-bridge controlled circuit of the present invention;
FIG. 5 is a DAC amplification circuit of the present invention;
fig. 6 is a DAC constant current circuit of the present invention.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings.
Example (b):
fig. 1 is a block diagram of the present invention. The NTC temperature measuring circuit is connected with the laser and used for measuring the temperature of the laser and transmitting the measured data to the singlechip; the single chip microcomputer is used for receiving temperature data measured by the NTC temperature measuring circuit and controlling the TEC heat energy converter to work through the H-bridge circuit and the DAC constant current circuit; the laser is connected with the TEC heat energy converter;
after the structure is adopted, the circuit realizes TEC temperature control through software PID algorithm adjustment. The high-precision fast-response NTC resistor (temperature sensor) (built-in 26-10K inside the laser or external NTC resistor 26-10K arranged on the outer surface of the laser) realizes accurate measurement of the actual temperature of the laser through the high-precision AD sampler voltage. The current flow direction of the TEC is controlled through a high-power H-bridge circuit, and the refrigeration or heating effect is controlled. The high-precision DA regulation type constant current source circuit realizes high-precision control of the current of the TEC instead of the traditional PWM regulation mode.
Fig. 2 shows an NTC temperature measuring circuit according to the present invention. The structure includes: a controllable precise voltage-stabilizing source TLV431, wherein a resistor R117 is connected between pins 1 and 2, a resistor R119 is connected between pins 1 and 3, and the pin 3 is grounded; a pin 2 of the resistor R116 is connected with a resistor R116, and one end of the resistor R116 is connected with a 12V power supply and is grounded through a capacitor C80; a pin 2 of the controllable precision voltage stabilizing source TLV431 is connected with a 4.5V power supply and a resistor R118, and one end of the resistor R118 is grounded through a capacitor C82; one end of the resistor R118 is connected with the equidirectional input end of the operational amplifier U16A, and the inverted input end of the operational amplifier U16A is connected with the output end thereof and is grounded through the resistor R120 and the capacitor C83; one end of the resistor R120 is connected with an AD port of the singlechip; the positive stage of the operational amplifier U16A is connected to a 5V power supply and to ground through a capacitor C81.
After adopting above-mentioned structure, this NTC temperature measurement converting circuit's theory of operation is:
and identifying the voltage signal through an AD conversion port of the singlechip to acquire the corresponding ambient temperature. When the temperature changes, the corresponding NTC resistance changes, the partial pressure of the NTC resistance changes, and the corresponding temperature is obtained by identifying the voltage. NTC _ LD + in fig. 2 is the input of the NTC resistor.
NTC is an abbreviation of Negative Temperature Coefficient, which means Negative Temperature Coefficient, and generally refers to semiconductor material or component with large Negative Temperature Coefficient, so called NTC thermistor is a Negative Temperature Coefficient thermistor. It is made up by using metal oxides of manganese, cobalt, nickel and copper as main material and adopting ceramic process. These metal oxide materials all have semiconductor properties because they are completely similar in conduction to semiconductor materials such as germanium, silicon, etc. At low temperatures, these oxide materials have a low number of carriers (electrons and holes) and therefore have a high resistance; as the temperature increases, the number of carriers increases, so the resistance value decreases.
As shown in fig. 3, the H-bridge inversion control circuit of the present invention is used for controlling the inversion of an H-bridge circuit, and specifically includes: an equidirectional input end of the operational amplifier U1 is respectively connected with the R5, the capacitor C3 and the resistor R4, the capacitor C3 and the resistor R5 are grounded after being connected in parallel, and the resistor R4 is connected with a power supply VCC; the reverse input end of the single-chip microcomputer is connected with an I/O port of the single-chip microcomputer through a resistor R2; the output end of the operational amplifier is connected with a resistor R1, a resistor R30 and a capacitor C2, the capacitor C2 is grounded, and the resistor R1 is connected with the reverse input end of the operational amplifier U1; its positive pole is connected to the power supply VCC and to ground via a capacitor C1, and its negative pole is connected to ground.
As shown in fig. 4, the H-bridge controlled circuit of the present invention is controlled by the H-bridge flip control circuit, and specifically includes: the MOS tube Q1, the MOS tube Q2, the MOS tube Q3 and the MOS tube Q4 are connected, and the gate electrodes of the MOS tube Q1 and the MOS tube Q3 are connected with the heating output end HOT of the H-bridge inverting conversion circuit through a triode Q6; the MOS tube Q2 is connected with the gate of the MOS tube Q4 and then is connected with the refrigerating output end COL of the H-bridge inverting control circuit through a triode Q5; the source set of the MOS transistor Q1 is connected with the drain electrode of the MOS transistor Q3; the source set of the MOS transistor Q2 is connected with the drain electrode of the MOS transistor Q4; a diode D2, a diode D3, a diode D4 and a diode D5 are respectively connected between the source and the drain of the MOS tube Q1, the MOS tube Q2, the MOS tube Q3 and the MOS tube Q4; the anode of the diode D2 and the cathode of the diode D4 are connected with one end of a capacitor C24, and the other end of the capacitor C24 is connected with the anode of a diode D3 and the cathode of a diode D5; the capacitor C24 is connected with the capacitor C25 and the resistor R29 in parallel; and two ends of the capacitor C24 are connected with an input end P5 of the TEC thermal energy converter.
After the structure is adopted, the high and low levels output by the I/O port of the single chip microcomputer are used for controlling the TEC cooling or heating mode, the high and low levels output by the I/O port of the single chip microcomputer are respectively about 3.3V and 0V, the U1 transport amplifier is used, and when the logic level COL is equal to 1, the HOT is equal to 0. When the level of the I/O port of the single chip microcomputer is high, the Q5NPN triode is conducted, and the Q6NPN triode is cut off. Q2, Q3MOS tube is cut off, Q1, Q4MOS tube is conducted, and current flows from P51 pin to 2 pin. The TEC is enabled to reach a refrigeration mode when current is conducted. On the contrary, when the level of the I/O port of the singlechip is low, the Q5NPN triode is cut off, and the Q6NPN triode is conducted. Q2, Q3MOS pipe is turned on, Q1, Q4MOS pipe is turned off, and current flows from P52 pin to 1 pin. The TEC is enabled to reach a heating mode when current is conducted.
As shown in fig. 5, the DAC amplifying circuit according to the present invention includes: an equidirectional input end of the operational amplifier U1A is connected with a resistor R16, a capacitor C17 and a resistor R12, wherein one end of the resistor R12 is connected with an output port of the singlechip; the reverse input end of the operational amplifier U1A is connected with a resistor R11 and a resistor R9, the resistor R11 is grounded, and the resistor R9 is connected with the output end of the operational amplifier U1A;
as shown in fig. 6, the DAC constant current circuit of the present invention includes an operational amplifier U3, the equidirectional input end of which is connected to a capacitor C9, a resistor R20, a resistor R21, and an adjustable resistor W1; the capacitor C19 and the resistor R20 are grounded, and the adjustable resistor is connected with the output end of the DAC amplifying circuit; the reverse input end of the operational amplifier U3 is connected in series with a resistor R6, a capacitor C4 and a resistor R18 and then grounded; one end of the resistor R18 is connected with the output end of the operational amplifier U3, the resistor R15, the resistor R15, the MOS transistor M1 and the resistor R22 are connected in series, and then the resistor R21 is connected with the reverse input end of the operational amplifier U3; the positive stage of the operational amplifier U3 is connected with a 12V power supply through a resistor R10, and the positive electrode of the operational amplifier U3 is grounded through a capacitor C6 and a capacitor C8 respectively. Test points such as J1 and J3 are arranged in the circuit, so that debugging and testing are convenient.
After the structure is adopted, the current of the Thermal Energy Converter (TEC) is controlled through the high-precision DAC port, so that the refrigerating and heating effects are adjusted. The same DAC voltage is output through the U1(OPA2335) same-proportion operational amplifier, and the rear-end load current driving capability is increased.
An operational amplifier U3(LM8261 and a mos tube M1IRFP064N) and a constant current source circuit consisting of a comparison resistor 0.01 ohm 5w, and Ids of IRFP064N are linearly controlled by controlling DAC voltage. Ids ═ aV (DAC) + b detects the laser temperature change through the NTC resistor built in the laser, and calculates the I/O level and the DAC output voltage through a software PID algorithm so as to control the direction and the intensity.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.

Claims (3)

1. A high-precision temperature control circuit with a DAC constant current circuit is characterized by comprising:
the NTC temperature measuring circuit is connected with the laser and used for measuring the temperature of the laser and transmitting the measured data to the singlechip;
the single chip microcomputer is used for receiving temperature data measured by the NTC temperature measuring circuit and controlling the TEC heat energy converter to work through the H-bridge circuit and the DAC constant current circuit;
the laser is connected with the TEC heat energy converter;
wherein the H-bridge circuit comprises:
an H bridge upset control circuit for control H bridge circuit upset specifically includes: an equidirectional input end of the operational amplifier U1 is respectively connected with a resistor R5, a capacitor C3 and a resistor R4, the capacitor C3 and the resistor R5 are grounded after being connected in parallel, and the resistor R4 is connected with a power supply VCC; the reverse input end of the single-chip microcomputer is connected with an I/O port of the single-chip microcomputer through a resistor R2; the output end of the operational amplifier is connected with a resistor R1, a resistor R30 and a capacitor C2, the capacitor C2 is grounded, and the resistor R1 is connected with the reverse input end of the operational amplifier U1; the anode of the capacitor is connected with a power supply VCC and is grounded through a capacitor C1, and the cathode of the capacitor is grounded;
an H bridge controlled circuit, be controlled by H bridge upset control circuit specifically includes:
the MOS tube Q1, the MOS tube Q2, the MOS tube Q3 and the MOS tube Q4 are connected, and the gates of the MOS tube Q1 and the MOS tube Q3 are connected with a resistor R30 of the H-bridge turnover control circuit through a triode Q6; the MOS tube Q2 and the gate of the MOS tube Q4 are connected and then connected with one end of a resistor R31 through a triode Q5, and the other end of the resistor R31 is connected with an I/O port of the single chip microcomputer; the source electrode of the MOS tube Q1 is connected with the drain electrode of the MOS tube Q3; the source electrode of the MOS tube Q2 is connected with the drain electrode of the MOS tube Q4; a diode D2, a diode D3, a diode D4 and a diode D5 are respectively connected between the source and the drain of the MOS tube Q1, the MOS tube Q2, the MOS tube Q3 and the MOS tube Q4; the anode of the diode D2 and the cathode of the diode D4 are connected with one end of a capacitor C24, and the other end of the capacitor C24 is connected with the anode of a diode D3 and the cathode of a diode D5; the capacitor C24 is connected with the capacitor C25 and the resistor R29 in parallel; two ends of the capacitor C24 are connected with an input end P5 of the TEC heat energy converter;
wherein, DAC constant current circuit includes:
the DAC constant current circuit comprises an operational amplifier U3, wherein the equidirectional input end of the operational amplifier U3 is connected with a capacitor C19, a resistor R20 and an adjustable resistor W1; the capacitor C19 and the resistor R20 are grounded, and the adjustable resistor is connected with the output end of the DAC amplifying circuit; the reverse input end of the operational amplifier U3 is connected in series with a resistor R6, a capacitor C4 and a resistor R18 and then grounded; one end of the resistor R18 is connected with the output end of the operational amplifier U3 and the resistor R15, the resistor R15, the MOS transistor M1 and the resistor R22 are connected in series, and then the resistor R21 is connected with the reverse input end of the operational amplifier U3; the anode of the operational amplifier U3 is connected with a 12V power supply through a resistor R10, and the anode of the operational amplifier U3 is grounded through a capacitor C6 and a capacitor C8 respectively;
wherein the operational amplifier U3 is LM 8261.
2. The high-precision temperature control circuit with the DAC constant current circuit as claimed in claim 1, wherein the DAC constant current circuit further comprises:
a DAC amplification circuit, comprising: the same-direction input end of the operational amplifier U1A is connected with one end of a resistor R16, one end of a capacitor C17 and one end of a resistor R12, wherein the other end of the capacitor C17 and the other end of the resistor R16 are grounded, and the other end of the resistor R12 is connected with the output port of the single chip microcomputer; the reverse input end of the operational amplifier U1A is connected with a resistor R11 and a resistor R9, the resistor R11 is grounded, and the resistor R9 is connected with the output end of the operational amplifier U1A.
3. The high-precision temperature control circuit with the DAC constant current circuit as claimed in claim 1, wherein the NTC temperature measurement circuit comprises: a controllable precise voltage-stabilizing source TLV431, wherein a resistor R117 is connected between pins 1 and 2, a resistor R119 is connected between pins 1 and 3, and the pin 3 is grounded; a pin 2 of the resistor R116 is connected with a resistor R116, and one end of the resistor R116 is connected with a 12V power supply and is grounded through a capacitor C80; a pin 2 of the controllable precision voltage stabilizing source TLV431 is connected with a 4.5V power supply and a resistor R118, and one end of the resistor R118 is grounded through a capacitor C82; one end of the resistor R118 is connected with the equidirectional input end of the operational amplifier U16A, and the inverted input end of the operational amplifier U16A is connected with the output end thereof and is grounded through the resistor R120 and the capacitor C83; one end of the resistor R120 is connected with an AD port of the singlechip; the anode of the operational amplifier U16A is connected to analog ground through a capacitor C81.
CN201810810108.5A 2016-12-26 2016-12-26 High-precision temperature control circuit with DAC constant current circuit Active CN108563260B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810810108.5A CN108563260B (en) 2016-12-26 2016-12-26 High-precision temperature control circuit with DAC constant current circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201611216192.5A CN106406386B (en) 2016-12-26 2016-12-26 A kind of two-way TEC automatic, high precisions temperature-control circuit
CN201810810108.5A CN108563260B (en) 2016-12-26 2016-12-26 High-precision temperature control circuit with DAC constant current circuit

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201611216192.5A Division CN106406386B (en) 2016-12-26 2016-12-26 A kind of two-way TEC automatic, high precisions temperature-control circuit

Publications (2)

Publication Number Publication Date
CN108563260A CN108563260A (en) 2018-09-21
CN108563260B true CN108563260B (en) 2021-01-08

Family

ID=58087948

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201810810108.5A Active CN108563260B (en) 2016-12-26 2016-12-26 High-precision temperature control circuit with DAC constant current circuit
CN201611216192.5A Active CN106406386B (en) 2016-12-26 2016-12-26 A kind of two-way TEC automatic, high precisions temperature-control circuit
CN201810810111.7A Active CN108646812B (en) 2016-12-26 2016-12-26 High-precision temperature control circuit with DAC (digital-to-analog converter) amplifying circuit

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201611216192.5A Active CN106406386B (en) 2016-12-26 2016-12-26 A kind of two-way TEC automatic, high precisions temperature-control circuit
CN201810810111.7A Active CN108646812B (en) 2016-12-26 2016-12-26 High-precision temperature control circuit with DAC (digital-to-analog converter) amplifying circuit

Country Status (1)

Country Link
CN (3) CN108563260B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108398970A (en) * 2017-10-23 2018-08-14 姜倩 A kind of high-performance temperature control system based on ADN8831
CN108646813A (en) * 2018-07-17 2018-10-12 无锡亮源激光技术有限公司 Temperature automatically controlled laser driving circuit
CN109161477A (en) * 2018-08-30 2019-01-08 北京龙基高科生物科技有限公司 A kind of temperature-control circuit and its application based on gene sequencing
CN109217099B (en) * 2018-10-31 2021-06-01 威海北洋电气集团股份有限公司 Temperature control circuit of DFB laser
CN109557965A (en) * 2018-12-27 2019-04-02 江苏万帮德和新能源科技股份有限公司 Environment detecting and controlling system in a kind of charging pile
CN114498290B (en) * 2022-04-14 2022-07-12 武汉博激世纪科技有限公司 Semiconductor laser therapeutic instrument control system and method
CN115079751A (en) * 2022-07-29 2022-09-20 中国电子科技集团公司第四十三研究所 High-power high-precision laser temperature control circuit

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007080418A1 (en) * 2006-01-16 2007-07-19 Bookham Technology Plc Temperature control system
CN101540474B (en) * 2009-04-07 2011-03-02 吉林大学 Thermostatic controller of digital semiconductor laser
CN101592762B (en) * 2009-06-05 2012-07-04 中兴通讯股份有限公司 Optical module and control method thereof
CN102291072B (en) * 2011-07-22 2013-04-24 李军科 Simple and highly-efficient hybrid stepper motor driving device
CN202487965U (en) * 2012-02-01 2012-10-10 深圳市联赢激光股份有限公司 Semiconductor laser unit temperature controlling circuit
CN102641209B (en) * 2012-04-19 2013-11-13 山东大学 Electrocautery therapeutic instrument
CN102801104B (en) * 2012-08-09 2014-10-15 武汉博激世纪科技有限公司 System for realizing bidirectional temperature control on laser based on full-bridge controller
CN203338172U (en) * 2013-07-25 2013-12-11 长春工业大学 Semiconductor laser constant current drive and temperature control system
CN104345750B (en) * 2013-07-25 2017-12-19 长春工业大学 A kind of semiconductor laser constant current driving and temperature control system
US20150377526A1 (en) * 2014-06-27 2015-12-31 Lumentum Operations Llc Thermoelectric cooler (tec) circuit
CN104282643B (en) * 2014-09-28 2017-01-11 武汉飞恩微电子有限公司 Microsensor temperature control system based on TEC
CN104434047A (en) * 2014-11-25 2015-03-25 成都思茂科技有限公司 Novel interlaced bidirectional constant-voltage low-power-consumption temperature measurement system
CN204465023U (en) * 2015-03-16 2015-07-08 杭州宇诺电子科技有限公司 Micro Energy Lose high pressure power-supply circuit
CN105223977B (en) * 2015-09-15 2017-09-26 盐城工学院 A kind of control method of the semiconductor laser temperature control device based on fuzzy control

Also Published As

Publication number Publication date
CN106406386B (en) 2018-09-11
CN108646812A (en) 2018-10-12
CN108563260A (en) 2018-09-21
CN108646812B (en) 2020-06-30
CN106406386A (en) 2017-02-15

Similar Documents

Publication Publication Date Title
CN108563260B (en) High-precision temperature control circuit with DAC constant current circuit
JP5901616B2 (en) Circuit for controlling temperature and enabling testing of semiconductor chips
CN205656518U (en) Constant temperature control system
US8324855B2 (en) Fan control system
CN210804136U (en) Temperature control box
CN109764972A (en) Temperature detecting module, temperature monitoring circuit and power chip
CN206180041U (en) Group battery refrigeration heating
CN106248728A (en) Experiment of Thermophysics thermal balance environment automaton and control method thereof
CN201000330Y (en) Inertia measurement unit with semi-conductor thermostatic controlling device
CN104713659A (en) Thermistor resistance linear compensation circuit based on transistor output characteristic
CN203658877U (en) Semiconductor laser temperature control system
CN206235982U (en) A kind of automated computer constant temperature mechanism
CN206991136U (en) A kind of temperature control and protection circuit for semiconductor chilling plate
CN206321361U (en) Wolfram rhenium heat electric couple verification system
CN203858523U (en) Precision instrument with temperature control device
CN106708130A (en) Semiconductor refrigeration temperature control system
CN103019274A (en) Electrical heating method and circuit of electronic device at low temperature
CN104181954B (en) Constant-temperature control circuit of electronic refrigerator
CN110220937B (en) Method and device for predicting service life of thermoelectric refrigeration module
CN114825563A (en) Circuit structure with temperature protection
CN211786813U (en) Temperature control system of laser and laser
CN212586493U (en) Transient thermal resistance test circuit
US20220104387A1 (en) Thermal management system for electronic components with thermoelectric element
CN211905486U (en) Low-cost electronic circuit for core-through closed-loop Hall current sensor
CN209389445U (en) A kind of semiconductor laser

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant