CN115079751A - High-power high-precision laser temperature control circuit - Google Patents
High-power high-precision laser temperature control circuit Download PDFInfo
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- CN115079751A CN115079751A CN202210905444.4A CN202210905444A CN115079751A CN 115079751 A CN115079751 A CN 115079751A CN 202210905444 A CN202210905444 A CN 202210905444A CN 115079751 A CN115079751 A CN 115079751A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
Abstract
The invention discloses a temperature control circuit of a high-power high-precision laser, which belongs to the field of temperature control and comprises a temperature sampling amplifying circuit, a PWM (pulse-width modulation) driving circuit, a high-end gating circuit, an H-bridge circuit and a TEC (thermoelectric cooler), wherein the temperature sampling amplifying circuit outputs two paths of temperature error signals to two groups of PWM driving circuits respectively; the two paths of temperature error signals are also jointly input into the high-end gating circuit for comparison, and the high-end gating circuit outputs a control signal to control the on-off of two switching tubes above the H bridge; and two ends of the TEC are connected with the output end of the H-bridge circuit. According to the invention, the amplification factor can be set through the differential amplification circuit, the temperature control precision of +/-0.1 ℃ is realized, and the two switching tubes above the H-bridge circuit are set to be in a switching state, so that the loss is small, the duty ratio regulation range is wide, the power supply circuit is suitable for application of various power grades, and the applicability of the product is improved.
Description
Technical Field
The invention relates to the field of temperature control, in particular to a temperature control circuit of a high-power high-precision laser.
Background
The semiconductor laser has the advantages of small volume, light weight, small input voltage, simple structure, long service life, high conversion efficiency, low power consumption, low price, easy modulation and the like. These excellent characteristics have led to the wide application of semiconductor lasers in laser ranging, laser radar, laser communication, laser guidance and tracking, automatic control, etc.
However, the performance of semiconductor lasers is greatly affected by temperature. Along with the rise of temperature, the threshold current of the laser is increased, the output power is reduced, and the emission wavelength is moved, so that the mode is unstable, the internal defects are increased, the service life of the device is seriously influenced, and great difficulty is brought to the application.
Disclosure of Invention
The invention aims to provide a temperature control circuit of a high-power high-precision laser, which can realize the temperature control precision of a plus or minus 0.1 ℃ laser by controlling the working current of a TEC and meet the use requirement of the high-power laser.
In order to achieve the purpose, the invention provides the following technical scheme:
a temperature control circuit of a high-power high-precision laser comprises a temperature sampling amplifying circuit, a PWM (pulse width modulation) driving circuit, a high-end gating circuit, an H-bridge circuit and a TEC (thermoelectric cooler), wherein the temperature sampling amplifying circuit outputs two paths of temperature error signals to two groups of PWM driving circuits respectively; the two paths of temperature error signals are also jointly input into the high-end gating circuit for comparison, and the high-end gating circuit outputs a control signal to control the on-off of two switching tubes above the H bridge; and two ends of the TEC are connected with the output end of the H-bridge circuit.
Furthermore, the temperature sampling amplifying circuit comprises a temperature sampling circuit, a reference voltage setting circuit and two groups of differential amplifying circuits, wherein the output end of the temperature sampling circuit is respectively connected with one input end of the two groups of differential amplifying circuits, the phase of the connected input ends is opposite, and the output end of the reference voltage setting circuit is respectively connected with the other input end of the two groups of differential amplifying circuits; the two groups of differential amplifying circuits respectively output a temperature error signal.
Furthermore, two switch tubes above the H-bridge circuit are configured to be PMOS tubes, and two switch tubes below the H-bridge circuit are configured to be NMOS tubes.
Furthermore, the PMOS tube is driven by a switch control circuit, the switch control circuit comprises a triode, an emitting electrode of the triode is grounded, a collector electrode of the triode is connected with a power supply end through a voltage division circuit, an output end of the voltage division circuit is connected with a grid electrode of the PMOS tube, and a base electrode of the triode is connected with an output end of the high-end gating circuit through a resistor.
Furthermore, the high-side gating circuit comprises two operational amplifiers, one path of temperature error signal is connected with the positive input end of the first operational amplifier and the negative input end of the second operational amplifier, the other path of temperature error signal is connected with the negative input end of the first operational amplifier and the positive input end of the second operational amplifier, and the output ends of the two operational amplifiers are respectively connected to the two switch control circuits.
Further, two ends of the TEC are connected to the output end of the H-bridge circuit through LC circuits, respectively.
The temperature control circuit further comprises a temperature reaching circuit, the temperature reaching circuit comprises an operational amplifier, one input end of the operational amplifier is connected with a line and circuit composed of two diodes, two paths of temperature error signals are input into the line and circuit, the other input end of the operational amplifier is connected with a reference circuit, and the output end of the operational amplifier outputs a comparison value of the reference circuit and the line and circuit.
Has the advantages that: according to the invention, the amplification factor can be set through the differential amplification circuit, the temperature control precision of +/-0.1 ℃ is realized, and the two switching tubes above the H-bridge circuit are set to be in a switching state, so that the loss is small, the duty ratio regulation range is wide, the power supply circuit is suitable for application of various power grades, and the applicability of the product is improved. In addition, the circuit of the invention has simple structure, is easy to debug, can be realized by adopting conventional devices, and is easy to realize nationwide production.
Drawings
FIG. 1 is a functional block diagram of the present invention;
FIG. 2 is a schematic circuit diagram of the temperature sampling amplifying circuit of the present invention;
FIG. 3 is a schematic circuit diagram of an H-bridge circuit of the present invention;
FIG. 4 is a circuit schematic of the high side gating circuit of the present invention;
fig. 5 is a schematic diagram of the temperature signal output of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a temperature control circuit for a high-power high-precision laser includes a temperature sampling amplifying circuit, two sets of PWM driving circuits, a high-side gating circuit, an H-bridge circuit, a TEC, and an input filter circuit.
The temperature sampling amplifying circuit comprises a temperature sampling circuit, a reference voltage setting circuit and two groups of differential amplifying circuits. As shown in FIG. 2, the temperature sampling circuit comprises resistors R4 and R5, wherein the resistors R4 and R5 are connected in series, one end of the resistor is connected with 5V, and the other end of the resistor is connected with GND. The resistors R4 and R5 are 10k low-temperature drift resistors with the precision higher than 1%, the resistor R5 is an NTC thermistor with the model of MF11-103, the B value of 4050 and the resistance value of 10k at 25 ℃, and the thermistor is a negative temperature coefficient thermistor.
The reference voltage setting circuit comprises an operational amplifier U3A, the first group of differential amplifying circuits comprises an operational amplifier U1, and the second group of differential amplifying circuits comprises an operational amplifier U2. The positive input end of the operational amplifier U3A is connected with an external set reference voltage WK _ VREF, the negative input end is connected with the output end, the output end is connected with the positive input end of the operational amplifier U1 through a resistor R11, and is also connected with the negative input end of the operational amplifier U2 through a resistor R23. The positive input end of the operational amplifier U1 is connected with GND through a resistor R13, and a capacitor C8 is connected between the positive input end and the negative input end of the operational amplifier U1. The negative input end of the operational amplifier U1 is connected to the common end of the resistors R4 and R5 through a resistor R9, the negative input end and the output end of the operational amplifier U3578 are respectively connected with a resistor R8 and a capacitor C1 in parallel, and the power supply end of the operational amplifier U1 is connected with 5V through a resistor R6 and is also connected with GND through a capacitor C7. The positive input terminal of the operational amplifier U2 is connected to the common terminal of the resistors R4 and R5 through the resistor R28, and is also connected to GND through the resistor R30. And a capacitor C23 is connected between the negative input end and the positive input end of the operational amplifier U2. And the resistor R21 and the capacitor C2 are respectively connected with the output end of the capacitor C in parallel.
The amplification factor of the two groups of differential amplification circuits is adjustable between 10-100 times, the temperature control precision can be adjusted by adjusting the amplification factor, and the target temperature is set by externally setting the reference voltage WK _ VREF. The first set of differential amplification circuits outputs a temperature error signal u1 and the second set of differential amplification circuits outputs a temperature error signal u 2. The larger the temperature error signal of the sampling value of the temperature sampling circuit and the voltage value corresponding to the target temperature is, the larger the pulse width of the PWM is, and the larger the corresponding refrigerating or heating power is.
Assuming that the current ambient temperature is 25 ℃, and the temperature reference is set to be 2.5V, the voltage division values of the series connection of the operational amplifiers U1 and U2 are equal to the voltage division values of R4 and R5, and the outputs of the operational amplifiers U1 and U2 are both low level. When the reference voltage for setting the target temperature is greater than 2.5V, the output of the operational amplifier U2 is low (U2 is 0), the temperature error signal is amplified by the first set of differential amplifying circuits, the temperature error signal (refrigeration signal) U1 is output and sent to the PWM1 driving circuit (refrigeration), and the larger the temperature error is, the higher the U1 voltage is, the larger the pulse width of the PWM1 is, and the larger the refrigeration power is. When the reference voltage for setting the target temperature is less than 2.5V, the output of the operational amplifier U1 is low (U1 is 0), the temperature error signal is amplified by the second set of differential amplifier circuits, the temperature error signal (heating signal) U2 is output and sent to the PWM2 driving circuit (heating), and the higher the temperature error is, the higher the U2 voltage is, the larger the PWM pulse width is, and the higher the heating power is.
As shown in fig. 3, the upper two switching transistors Q1 and Q2 of the H-bridge circuit are PMOS transistors, and the lower two switching transistors Q3 and Q4 are NMOS transistors. The PMOS tubes Q1 and Q2 are respectively driven by a switch control circuit, and the on-off of the switch control circuit is controlled by a high-end gating circuit.
The switch control circuit connected with the PMOS tube Q1 comprises a triode Q5, resistors R14, R15 and R18, and the triode Q5 can be configured in an NPN type and can be replaced by other similar switching tubes with on-off property. The emitter of the triode Q5 is grounded, the base is connected with the output end of the high-end gating circuit through a resistor R18, the collector is connected with a resistor R15, a resistor R15 is connected with one end of the resistor R14, and the common end of the resistors R14 and R15 is connected with the grid of the PMOS tube Q1.
The switch control circuit connected with the PMOS tube Q2 comprises a triode Q6, resistors R17, R19 and R20, and the triode Q6 can be configured in an NPN type and can be replaced by other similar switching tubes with on-off property. The emitter of the triode Q6 is grounded, the base is connected with the output end of the high-end gating circuit through a resistor R19, the collector is sequentially connected with a resistor R20, a resistor R20 is connected with one end of the resistor R17, and the common end of the resistors R17 and R20 is connected with the grid of the PMOS tube Q2.
The source electrodes of the PMOS tubes Q1 and Q2 and the other ends of the resistors R14 and R17 are connected with a power supply voltage VIN through an input filter circuit, the input filter circuit filters direct-current voltage provided by an external power supply, ripple current is reduced, the voltage stability is ensured, and the filtered direct-current voltage is the highest output voltage of the TEC.
Two groups of PWM driving circuits (a PWM1 driving circuit and a PWM driving circuit) respectively output PWM1 and PWM2 control signals to control the on-off of two NMOS tubes Q3 and Q4 at the lower part in the H-bridge circuit, and output PWM pulse width according to a temperature error signal output by the temperature sampling amplifying circuit. The sources of the NMOS transistors Q3 and Q4 are grounded, a PWM2 control signal is input to the grid of the NMOS transistor Q3 through a PWM2 driving circuit, and a resistor R25 is connected between the grid and the source of the NMOS transistor Q3. Similarly, a PWM1 control signal is input to the gate of the NMOS transistor Q4 through the PWM1 driving circuit, and a resistor R26 is connected between the gate and the source of the NMOS transistor Q3.
And two ends of the TEC are respectively connected with the output end of the H-bridge circuit through the LC circuit. Specifically, the drains of the PMOS transistor Q1 and the NMOS transistor Q3 are connected to the first terminal of the inductor L1, the second terminal of the inductor L1 is connected to the first terminal of the TEC and is connected to ground through the capacitor C11, the drains of the PMOS transistor Q2 and the NMOS transistor Q4 are connected to the first terminal of the inductor L2, and the second terminal of the inductor L2 is connected to the second terminal of the TEC and is connected to ground through the capacitor C12. The inductors L1 and L2 and the capacitors C1 and C2 are used for filtering the PWM voltage, smoothing the current flowing through the TEC and improving the safety of the TEC.
As shown in fig. 4, the high-side gate circuit includes operational amplifiers U6A and U6B, the temperature error signal U1 is connected to the negative input terminal of the operational amplifier U6A, and is connected to the positive input terminal of the operational amplifier U6B through a resistor R1; the temperature error signal U2 is connected to the negative input terminal of the operational amplifier U6B, and is connected to the positive input terminal of the operational amplifier U6A through a resistor R2. The positive input end of the operational amplifier U6B is connected to the ground through a capacitor C1 and is connected to the soft start end of the PWM1 driving circuit through a diode D1; the positive input terminal of the operational amplifier U6A is connected to the capacitor C3, which is connected to ground, and to the soft start terminal of the PWM2 driver circuit through the diode D2. The diodes D1 and D2 can prevent the H-bridge from conducting in common when the circuit is started. The operational amplifier U6A outputs a DRIV1 signal to the switch control circuit to turn the transistor Q6 on and off, and the operational amplifier U6B outputs a DRIV2 signal to the switch control circuit to turn the transistor Q5 on and off.
And a power supply is input to supply power to the H-bridge circuit, a temperature signal is sampled by an external thermistor with a negative temperature coefficient, and when a temperature error signal u1 is higher than u2, the reference voltage of a target temperature is larger than 2.5V, the target temperature is lower than the current temperature by 25 ℃, and the TEC is required to start refrigeration. The over-temperature signal is amplified by the first group of differential amplification circuits and then sent to the PWM1 driving circuit (refrigeration), the operational amplifier U6B outputs high level, the DRIV2 signal drives the triode Q5 to be conducted, and the resistors R14 and R15 divide the voltage of the power supply end VIN, so that the PMOS tube Q1 is conducted at low level. At this time, the operational amplifier U6A outputs a low level, and the transistor Q6 and the PMOS transistor Q2 are turned off. Meanwhile, the PWM1 driving circuit receives the temperature error signal u1, outputs a PWM1 control signal to drive the NMOS tube Q4 to be conducted, the H bridge is conducted to generate a positive current, and the current flows through the TEC through the PMOS tube Q1 and the NMOS tube Q4 to refrigerate the semiconductor laser.
When the temperature error signal u1 is lower than u2, the reference voltage indicating the target temperature is less than 2.5V, the target temperature is 25 ℃ higher than the current temperature, and the TEC is required to start heating. The under-temperature signal is amplified by the second group of differential amplifying circuits and then sent to the PWM2 driving circuit (heating), the operational amplifier U6A outputs high level, the DRIV1 signal drives the triode Q6 to be conducted, and the resistors R17 and R20 divide the voltage of the power supply end VIN, so that the PMOS tube Q2 is conducted at low level. At this time, the operational amplifier U6B outputs a low level, and the transistor Q5 and the PMOS transistor Q1 are turned off. Meanwhile, the PWM2 driving circuit receives the temperature error signal u2, outputs a PWM2 control signal to drive the NMOS tube Q3 to be conducted, the H bridge is conducted to generate reverse current, and the current flows through the TEC through the PMOS tube Q2 and the NMOS tube Q3 to heat the semiconductor laser.
The PWM driving circuit can realize heating or refrigerating power control by adjusting the PWM pulse width of the NMOS tube Q3 or Q4, and the variation range of the conduction pulse width is 0-100%. The heating or cooling function of the TEC is determined by the direction of current flowing therethrough. The high-end gating circuit receives output signals of the two differential amplifying circuits, and the judging circuit is used for heating or refrigerating so as to gate the switching tube on the upper arm of the H bridge.
As shown in fig. 5, the present invention further includes a temperature-reaching circuit, which includes an operational amplifier U5, the negative input terminal of the operational amplifier U5 is connected to a wired-and circuit composed of diodes D8 and D9, the anode of the diode D9 is connected to the temperature error signal U1, the anode of the diode D8 is connected to the temperature error signal U2, and the cathodes of the two diodes are connected to the negative input terminal of the operational amplifier U5. The negative input end is connected with a resistor R32 in a grounding mode, and is connected with the output end of the operational amplifier U5 through a capacitor C20. The positive input end of the operational amplifier U5 is connected to the common end of the resistors R30 and R31, wherein the other end of the resistor R30 is connected to the reference voltage Vref, and the other end of the resistor R31 is grounded.
The resistors R30 and R31 set the comparison voltage threshold (0.7V), when the temperature control circuit reaches the temperature, the temperature error signals U1 and U2 both output low voltage, and the operational amplifier U5 outputs high level. Otherwise, as long as one of the temperature error signals U1, U2 is high, U5 outputs a low level indicating TEC is in operation.
According to the invention, the amplification factor can be set through the differential amplification circuit, the temperature control precision of +/-0.1 ℃ is realized, and the two switching tubes above the H-bridge circuit are set to be in a switching state, so that the loss is small, the duty ratio regulation range is wide, the power supply circuit is suitable for application of various power grades, and the applicability of the product is improved. In addition, the circuit of the invention has simple structure, is easy to debug, can be realized by adopting conventional devices, and is easy to realize nationwide production.
Although the present description is described in terms of embodiments, not every embodiment includes only a single embodiment, and such description is for clarity only, and those skilled in the art should be able to integrate the description as a whole, and the embodiments can be appropriately combined to form other embodiments as will be understood by those skilled in the art.
Therefore, the above description is only a preferred embodiment of the present application, and is not intended to limit the scope of the present application; all changes which come within the meaning and range of equivalency of the claims are to be embraced within their scope.
Claims (7)
1. A temperature control circuit of a high-power high-precision laser is characterized by comprising a temperature sampling amplifying circuit, a PWM (pulse-width modulation) driving circuit, a high-end gating circuit, an H-bridge circuit and a TEC (thermoelectric cooler), wherein the temperature sampling amplifying circuit outputs two paths of temperature error signals to two groups of PWM driving circuits respectively; the two paths of temperature error signals are also jointly input into the high-end gating circuit for comparison, and the high-end gating circuit outputs a control signal to control the on-off of two switching tubes above the H bridge; and two ends of the TEC are connected with the output end of the H-bridge circuit.
2. The temperature control circuit of claim 1, wherein the temperature sampling amplifying circuit comprises a temperature sampling circuit, a reference voltage setting circuit and two groups of differential amplifying circuits, wherein the output end of the temperature sampling circuit is connected with one input end of the two groups of differential amplifying circuits respectively, the phase of the connected input ends is opposite, and the output end of the reference voltage setting circuit is connected with the other input end of the two groups of differential amplifying circuits respectively; the two groups of differential amplifying circuits respectively output a temperature error signal.
3. The temperature control circuit of claim 1, wherein the two upper switching transistors of the H-bridge circuit are PMOS transistors, and the two lower switching transistors of the H-bridge circuit are NMOS transistors.
4. The temperature control circuit of claim 3, wherein the PMOS transistor is driven by a switch control circuit, the switch control circuit comprises a transistor, an emitter of the transistor is grounded, a collector of the transistor is connected to the power supply terminal through a voltage dividing circuit, an output terminal of the voltage dividing circuit is connected to a gate of the PMOS transistor, and a base of the transistor is connected to an output terminal of the high-side gating circuit through a resistor.
5. The temperature control circuit of claim 4, wherein the high-side gating circuit comprises two operational amplifiers, one temperature error signal is connected between the positive input terminal of the first operational amplifier and the negative input terminal of the second operational amplifier, the other temperature error signal is connected between the negative input terminal of the first operational amplifier and the positive input terminal of the second operational amplifier, and the output terminals of the two operational amplifiers are respectively connected to the two switch control circuits.
6. The high-power high-precision laser temperature control circuit according to claim 1, wherein two ends of the TEC are respectively connected with the output end of the H-bridge circuit through LC circuits.
7. The temperature control circuit of a high-power high-precision laser as claimed in claim 1, further comprising a temperature-reaching circuit, wherein the temperature-reaching circuit comprises an operational amplifier, one input end of the operational amplifier is connected with a line and circuit composed of two diodes, two paths of temperature error signals are input into the line and circuit, the other input end of the operational amplifier is connected with a reference circuit, and the output end outputs a comparison value of the reference circuit and the line and circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210905444.4A CN115079751A (en) | 2022-07-29 | 2022-07-29 | High-power high-precision laser temperature control circuit |
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| CN202210905444.4A CN115079751A (en) | 2022-07-29 | 2022-07-29 | High-power high-precision laser temperature control circuit |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203217398U (en) * | 2013-01-14 | 2013-09-25 | 长春长理光学精密机械有限公司 | Semiconductor laser temperature controller |
| CN104218448A (en) * | 2014-09-17 | 2014-12-17 | 威海北洋光电信息技术股份公司 | High-power semiconductor laser tube pulse driving circuit |
| CN106160064A (en) * | 2015-12-02 | 2016-11-23 | 马迎建 | Based on battery powered portable optical fiber source driving means |
| CN106406386A (en) * | 2016-12-26 | 2017-02-15 | 武汉博激世纪科技有限公司 | Bidirectional TEC automatic and high precision temperature control circuit |
| CN106877166A (en) * | 2015-12-14 | 2017-06-20 | 张凤军 | A kind of Temperature control circuit of semiconductor laser |
| CN108255211A (en) * | 2017-12-29 | 2018-07-06 | 北京国科世纪激光技术有限公司 | A kind of TEC refrigerating plants |
| CN209265296U (en) * | 2018-12-18 | 2019-08-16 | 中国电子科技集团公司第十六研究所 | A kind of TEC temperature control device |
| CN210514957U (en) * | 2019-08-19 | 2020-05-12 | 厦门华源嘉航科技有限公司 | TEC control circuit |
| CN211880321U (en) * | 2020-04-14 | 2020-11-06 | 四川工程职业技术学院 | Controllable logic circuit for H-bridge circuit and H-bridge circuit |
| CN112731986A (en) * | 2021-01-08 | 2021-04-30 | 肖峰 | Medical equipment temperature abnormity alarm circuit |
-
2022
- 2022-07-29 CN CN202210905444.4A patent/CN115079751A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203217398U (en) * | 2013-01-14 | 2013-09-25 | 长春长理光学精密机械有限公司 | Semiconductor laser temperature controller |
| CN104218448A (en) * | 2014-09-17 | 2014-12-17 | 威海北洋光电信息技术股份公司 | High-power semiconductor laser tube pulse driving circuit |
| CN106160064A (en) * | 2015-12-02 | 2016-11-23 | 马迎建 | Based on battery powered portable optical fiber source driving means |
| CN106877166A (en) * | 2015-12-14 | 2017-06-20 | 张凤军 | A kind of Temperature control circuit of semiconductor laser |
| CN106406386A (en) * | 2016-12-26 | 2017-02-15 | 武汉博激世纪科技有限公司 | Bidirectional TEC automatic and high precision temperature control circuit |
| CN108255211A (en) * | 2017-12-29 | 2018-07-06 | 北京国科世纪激光技术有限公司 | A kind of TEC refrigerating plants |
| CN209265296U (en) * | 2018-12-18 | 2019-08-16 | 中国电子科技集团公司第十六研究所 | A kind of TEC temperature control device |
| CN210514957U (en) * | 2019-08-19 | 2020-05-12 | 厦门华源嘉航科技有限公司 | TEC control circuit |
| CN211880321U (en) * | 2020-04-14 | 2020-11-06 | 四川工程职业技术学院 | Controllable logic circuit for H-bridge circuit and H-bridge circuit |
| CN112731986A (en) * | 2021-01-08 | 2021-04-30 | 肖峰 | Medical equipment temperature abnormity alarm circuit |
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