CN106877166A - A kind of Temperature control circuit of semiconductor laser - Google Patents
A kind of Temperature control circuit of semiconductor laser Download PDFInfo
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- CN106877166A CN106877166A CN201510915015.5A CN201510915015A CN106877166A CN 106877166 A CN106877166 A CN 106877166A CN 201510915015 A CN201510915015 A CN 201510915015A CN 106877166 A CN106877166 A CN 106877166A
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Abstract
A kind of Temperature control circuit of semiconductor laser, temperature-control circuit is made up of temperature voltage change-over circuit, PID compensation lattice network, peripheral H-bridge circuit, low-pass filter circuit.Temperature control circuit of semiconductor laser selectes temperature control master chips of the ADN8831 as laser, magnitude of voltage one target temperature for setting of correspondence of ADN8831 inputs.Appropriately sized electric current flows through TEC (Thermo Electric Cooler), TEC is heated or is freezed, and facet surface temperature is made in this process to set temperature value.Circuit structure is compact, and cost is relatively low, and working stability improves control accuracy while reducing power consumption, can provide constant and adjustable operating temperature for laser.
Description
Technical field
The present invention relates to a kind of Temperature control circuit of semiconductor laser, it is adaptable to domain of control temperature.
Background technology
Modern laser is widely used in fields such as industrial processes, accurate measurement, communication, information processing, medical science, military affairs and scientific and technical research, and the related industry for being formed has turned into one of power of promotion social and economic development.At present, semiconductor laser has obtained widely applying, and heat problem is always along with the birth and development of semiconductor laser, for high power semiconductor lasers, how the temperature of the course of work is efficiently controlled, so as to strengthen its anti-destruction ability, improve optical output power, gradually it is subject to the people's attention.
Semiconductor laser is widely used in the fields such as scientific research, national defence, industry.But the rising of the own temperature of temperature makes its wavelength broadening when being worked due to semiconductor laser, the precision of measuring instrument, communication quality had a strong impact on, have less adapted to severe industrial environment.Therefore the temperature change of noise spectra of semiconductor lasers is needed strictly to be controlled.Due to the uncertainty of semiconductor laser temperature Mathematical Modeling（Its temperature changes with the size of Injection Current）, and control accuracy requirement is higher, therefore design one kind can provide constant and adjustable operating temperature for laser, while the temperature-control circuit of reduce loss is necessary.
The content of the invention
The present invention provides a kind of Temperature control circuit of semiconductor laser, and circuit structure is compact, and cost is relatively low, and working stability improves control accuracy while reducing power consumption, can provide constant and adjustable operating temperature for laser.
The technical solution adopted in the present invention is.
Temperature control circuit of semiconductor laser selectes temperature control master chips of the ADN8831 as laser, magnitude of voltage one target temperature for setting of correspondence of ADN8831 inputs.Appropriately sized electric current flows through TEC (Thermo Electric Cooler), TEC is heated or is freezed, and facet surface temperature is made in this process to set temperature value.
In the temperature voltage change-over circuit, electric bridge is by R1, R=2, RTHComposition, when electric bridge is in stable state, set temperature value is exactly the temperature value of facet surface, wherein RTHIt is the thermistor with negative temperature coefficient, for measuring the temperature of the laser being placed on TEC surfaces.Desired laser temperature represents that the magnitude of voltage produced with thermistor is compared by high precision operating amplifier with a fixed magnitude of voltage, and the error voltage for producing more afterwards is amplified by the amplifier of high-gain.
PID (Proportion Integrator Differentiator) the PID regulation compensation network is the response speed and temperature stability for determining TEC controllers, PID is equivalent to the adjustable amplifier of multiplication factor, degree of regulation is improved with scale operation and integral operation, with acceleration transient process of differentiating, the contradiction of governing speed and precision is preferably solved.When being modified, the response time and precision for making TEC control systems using the method for regulation compensation circuit parameter become more excellent.The output of prime error operational amplifier is connected on the input pin of temperature-compensation circuit.
P1 in the peripheral H-bridge circuit, P2, N1, N2, OUTA, OUTB are respectively coupled to the P1 of ADN8831, on P2, N1, N2, OUTA, OUTB pin.TEC controllers are located in the middle of H bridges, constitute an asymmetric bridge.ADN8831 drives to the left Zhi Caiyong on-off modes of H bridges, and right Zhi Caiyong linear modes drive, i.e., when switching tube N1 conductings, switching tube P1 closings, P2 normal opens, N2 are normally closed, electric current flows to OUTA ends from the OUTB ends of TEC through TEC, and this is refrigerating state；When switching tube N1 closings, switching tube P1 conductings, P2 normally closed, N2 normal opens, electric current flows to OUTB ends from the OUTA ends of TEC through TEC, and this is pyrogenicity state.This flexible and convenient external H bridges, can preferably improve power-efficient, reduce ripple current, increased heat dissipation path.
The low-pass filter circuit R1 represents TEC resistance, and R1 is the equivalent series resistance of C1, and R2 is equal to the conducting resistance of the dead resistance plus Q1 or Q2 of L1, and R1 and R2 will be far smaller than RL, VX is the pulse width modulated voltage changed between PVDD and PGND, constitutes a low-pass filter network for second order.
The beneficial effects of the invention are as follows：Circuit structure is compact, and cost is relatively low, and working stability improves control accuracy while reducing power consumption, can provide constant and adjustable operating temperature for laser.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples.
Fig. 1 is TEC control principle block diagrams of the invention.
Fig. 2 is temperature voltage change-over circuit of the invention.
Fig. 3 is that differential amplification of the invention compensates partial circuit with PID.
Fig. 4 is peripheral H-bridge circuit of the invention.
Fig. 5 is low-pass filter circuit of the invention.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and examples.
Such as Fig. 1, in TEC controls, thermistor is used for measuring the temperature of the laser being placed on TEC surfaces.Desired laser temperature is represented with a fixed magnitude of voltage, the magnitude of voltage produced with thermistor is compared by high precision operating amplifier, the error voltage for producing more afterwards is amplified by the amplifier of high-gain, network pair is compensated simultaneously because the phase delay that the cold and hot end of laser causes is compensated, drive the output of H bridges after compensation, H bridges not only control the size of TEC electric currents can also to control TEC senses of current.When the temperature value of laser is less than set point temperatures value, H bridges can press certain amplitude driving current towards mono- direction of TEC, and now TEC is in heated condition;When the temperature value of laser is higher than set point temperatures value, H bridges can reduce the size of current of TEC or even can change the sense of current of TEC, and at this moment TEC is at refrigerating state.When control loop reaches balance, the size and Orientation of the electric current of TEC is just adjusted, and what laser temperature will be slowly is close to temperature is set.
Such as Fig. 2, in temperature voltage change-over circuit, electric bridge is by R1, R=2, RTHComposition, when electric bridge is in stable state, set temperature value is exactly the temperature value of facet surface, wherein RTHIt is the thermistor with negative temperature coefficient, for measuring the temperature of the laser being placed on TEC surfaces.Desired laser temperature represents that the magnitude of voltage produced with thermistor is compared by high precision operating amplifier with a fixed magnitude of voltage, and the error voltage for producing more afterwards is amplified by the amplifier of high-gain.
Such as Fig. 3, PID (Proportion Integrator
Differentiator) PID regulation compensation network is the response speed and temperature stability for determining TEC controllers, PID is equivalent to the adjustable amplifier of multiplication factor, degree of regulation is improved with scale operation and integral operation, with acceleration transient process of differentiating, the contradiction of governing speed and precision is preferably solved.When being modified, the response time and precision for making TEC control systems using the method for regulation compensation circuit parameter become more excellent.The output of prime error operational amplifier is connected on the input pin of temperature-compensation circuit.
Such as Fig. 4, the P1 in peripheral H-bridge circuit, P2, N1, N2, OUTA, OUTB is respectively coupled to the P1 of ADN8831, on P2, N1, N2, OUTA, OUTB pin.TEC controllers are located in the middle of H bridges, constitute an asymmetric bridge.ADN8831 drives to the left Zhi Caiyong on-off modes of H bridges, and right Zhi Caiyong linear modes drive, i.e., when switching tube N1 conductings, switching tube P1 closings, P2 normal opens, N2 are normally closed, electric current flows to OUTA ends from the OUTB ends of TEC through TEC, and this is refrigerating state；When switching tube N1 closings, switching tube P1 conductings, P2 normally closed, N2 normal opens, electric current flows to OUTB ends from the OUTA ends of TEC through TEC, and this is pyrogenicity state.This flexible and convenient external H bridges, can preferably improve power-efficient, reduce ripple current, increased heat dissipation path.
Such as Fig. 5, low-pass filter circuit R, TEC resistance is represented, R1 is the equivalent series resistance of C1, and R2 is equal to the conducting resistance of the dead resistance plus Q1 or Q2 of L1, and R1 and R2 will be far smaller than RL, VX is the pulse width modulated voltage changed between PVDD and PGND, constitutes a low-pass filter network for second order.
Claims (7)
1.
A kind of Temperature control circuit of semiconductor laser, it is characterized in that：Described temperature-control circuit is made up of temperature voltage change-over circuit, PID compensation lattice network, peripheral H-bridge circuit, low-pass filter circuit.
2. a kind of Temperature control circuit of semiconductor laser according to claim 1, it is characterized in that：The Temperature control circuit of semiconductor laser selectes temperature control master chips of the ADN8831 as laser, magnitude of voltage one target temperature for setting of correspondence of ADN8831 inputs.
3. a kind of Temperature control circuit of semiconductor laser according to claim 1, it is characterized in that：In described temperature voltage change-over circuit, electric bridge is by R1, R=2, RTHComposition, when electric bridge is in stable state, set temperature value is exactly the temperature value of facet surface.
4.
A kind of Temperature control circuit of semiconductor laser according to claim 1, it is characterized in that：The PID PIDs regulation compensation network is the response speed and temperature stability for determining TEC controllers, and PID is equivalent to the adjustable amplifier of multiplication factor.
5. a kind of Temperature control circuit of semiconductor laser according to claim 1, it is characterized in that：P1 in the peripheral H-bridge circuit, P2, N1, N2, OUTA, OUTB are respectively coupled to the P1 of ADN8831, on P2, N1, N2, OUTA, OUTB pin.
6. a kind of Temperature control circuit of semiconductor laser according to claim 1, it is characterized in that：In the peripheral H-bridge circuit, ADN8831 drives to the left Zhi Caiyong on-off modes of H bridges, and right Zhi Caiyong linear modes drive.
7. a kind of Temperature control circuit of semiconductor laser according to claim 1, it is characterized in that：The low-pass filter circuit R1 represents TEC resistance, and R1 is the equivalent series resistance of C1, and R2 is equal to the conducting resistance of the dead resistance plus Q1 or Q2 of L1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510915015.5A CN106877166A (en) | 2015-12-14 | 2015-12-14 | A kind of Temperature control circuit of semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510915015.5A CN106877166A (en) | 2015-12-14 | 2015-12-14 | A kind of Temperature control circuit of semiconductor laser |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108923260A (en) * | 2018-08-23 | 2018-11-30 | 武汉英飞华科技有限公司 | A kind of super-radiance light emitting diode wideband light source |
| CN110707513A (en) * | 2019-10-09 | 2020-01-17 | 深圳市欧深特信息技术有限公司 | Temperature adjusting method and system of laser and computer readable storage medium |
| CN112731985A (en) * | 2020-12-24 | 2021-04-30 | 中国工程物理研究院核物理与化学研究所 | Dustproof and moistureproof device for regulating and controlling environment temperature of precision instrument with high precision |
| CN113342091A (en) * | 2021-07-13 | 2021-09-03 | 深圳市微特精密科技股份有限公司 | Intelligent temperature control device suitable for chip thermal management |
| CN115079751A (en) * | 2022-07-29 | 2022-09-20 | 中国电子科技集团公司第四十三研究所 | High-power high-precision laser temperature control circuit |
-
2015
- 2015-12-14 CN CN201510915015.5A patent/CN106877166A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108923260A (en) * | 2018-08-23 | 2018-11-30 | 武汉英飞华科技有限公司 | A kind of super-radiance light emitting diode wideband light source |
| CN110707513A (en) * | 2019-10-09 | 2020-01-17 | 深圳市欧深特信息技术有限公司 | Temperature adjusting method and system of laser and computer readable storage medium |
| CN112731985A (en) * | 2020-12-24 | 2021-04-30 | 中国工程物理研究院核物理与化学研究所 | Dustproof and moistureproof device for regulating and controlling environment temperature of precision instrument with high precision |
| CN112731985B (en) * | 2020-12-24 | 2022-06-07 | 中国工程物理研究院核物理与化学研究所 | Dustproof and moistureproof device for regulating and controlling environment temperature of precision instrument with high precision |
| CN113342091A (en) * | 2021-07-13 | 2021-09-03 | 深圳市微特精密科技股份有限公司 | Intelligent temperature control device suitable for chip thermal management |
| CN115079751A (en) * | 2022-07-29 | 2022-09-20 | 中国电子科技集团公司第四十三研究所 | High-power high-precision laser temperature control circuit |
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Application publication date: 20170620 |
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