CN203164796U - Temperature control apparatus for semiconductor laser - Google Patents
Temperature control apparatus for semiconductor laser Download PDFInfo
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- CN203164796U CN203164796U CN 201320063230 CN201320063230U CN203164796U CN 203164796 U CN203164796 U CN 203164796U CN 201320063230 CN201320063230 CN 201320063230 CN 201320063230 U CN201320063230 U CN 201320063230U CN 203164796 U CN203164796 U CN 203164796U
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Abstract
The utility model discloses a temperature control apparatus for a semiconductor laser, and belongs to the field of laser. The apparatus comprises: a temperature measurement module for measuring the operating temperature of the LD; a comparison module for comparing the operating temperature of the LD measured by the temperature measurement module with a predetermined reference temperature to obtain a comparison result; and an adjusting module for adjusting the operating temperature of the LD according to the comparison result obtained by the comparison module. The comparison module is respectively connected to the temperature measurement module and the adjusting module. The utility model can provide a stable operating temperature environment for the LD and enable the LD to output laser with invariant fixed wavelength state, thereby utilizing the LD to the field of optical fiber communications.
Description
Technical field
The utility model relates to field of lasers, particularly a kind of attemperating unit for semiconductor laser.
Background technology
Laser instrument can be divided into solid state laser, gas laser, liquid laser and LD(Laser Diode, laser diode by operation material) (claiming semiconductor laser again).Wherein, LD works material and produces the device of stimulated emission effect with certain semiconductor material.Because semiconductor material is relatively more responsive to temperature, small temperature variation will make the Wavelength of Laser of LD output produce obvious variation, thereby can not satisfy the fixing application of optical maser wavelength of ask for something LD output, for example demand of fiber optic communication field.
The utility model content
In order to solve prior art problems, the utility model embodiment provides a kind of attemperating unit for semiconductor laser.Described technical scheme is as follows:
The utility model embodiment provides a kind of attemperating unit for semiconductor laser, and described device comprises:
The temperature measurement module that is used for the working temperature of measurement LD, working temperature for the LD that described temperature measurement module is measured compares with the reference temperature of being scheduled to, obtain the comparison module of comparative result, and for the comparative result that obtains according to described comparison module, regulate the adjustment module of the working temperature of described LD, described comparison module is connected with described adjustment module with described temperature measurement module respectively.
Wherein, described comparison module comprises first synistor, second synistor, first potentiometer and power supply;
Described first synistor is connected with an end of described second synistor, and the tie point of described first synistor and described second synistor connects described power supply, described first potentiometer is connected with an end of described temperature measurement module, and the tie point ground connection of described first potentiometer and described temperature measurement module, described first synistor is connected with the other end of described first potentiometer, described second synistor is connected with the other end of described temperature measurement module, and the resistance of described first synistor and described second synistor equates.
Further, described comparison module also comprises amplifying circuit, and described amplifying circuit comprises first operational amplifier, second operational amplifier, the 3rd operational amplifier, second potentiometer, first resistance, second resistance, the 3rd resistance, the 4th resistance, the 5th resistance and the 6th resistance;
The in-phase input end of described first operational amplifier links to each other with the tie point of described first potentiometer with described first synistor, the in-phase input end of described second operational amplifier links to each other with the tie point of described temperature measurement module with described second synistor, described second potentiometer links to each other with an end of described first resistance, the inverting input of described first operational amplifier links to each other with the tie point of described first resistance with described second potentiometer, the other end of described second potentiometer links to each other with an end of described second resistance, the inverting input of described second operational amplifier links to each other with the tie point of described second resistance with described second potentiometer, the output terminal of described first operational amplifier and described second operational amplifier is connected with an end of described the 3rd resistance and described the 4th resistance respectively, the other end of described first resistance is connected on the tie point of described first operational amplifier and described the 3rd resistance, the other end of described second resistance is connected on the tie point of described second operational amplifier and described the 4th resistance, the other end of described the 3rd resistance links to each other with an end of described the 5th resistance, the inverting input of described the 3rd operational amplifier links to each other with the tie point of described the 5th resistance with described the 3rd resistance, the other end of described the 4th resistance links to each other with an end of described the 6th resistance, the in-phase input end of described the 3rd operational amplifier links to each other with the tie point of described the 6th resistance with described the 4th resistance, the other end of described the 5th resistance is connected with the output terminal of described the 3rd operational amplifier, the other end ground connection of described the 6th resistance.
Wherein, described adjustment module comprises:
Be used for according to comparative result, output regulate described LD working temperature indicator signal the proportional-integral-differential regulator, be used for the indicator signal according to described proportional-integral-differential regulator, the driving circuit of output driving current and be used for the semiconductor cooler of under the driving of the drive current of described driving circuit output described LD being lowered the temperature or heating, described driving circuit is connected with described semiconductor cooler with described proportional-integral-differential regulator respectively.
Wherein, described device also comprises the heat radiator that is located at described semiconductor cooler surface.
Particularly, described temperature measurement module is thermistor.
The beneficial effect that the technical scheme that the utility model embodiment provides is brought is: the working temperature of measuring LD by temperature measurement module, comparison module compares the working temperature of the LD that described temperature measurement module is measured with the reference temperature of being scheduled to, obtain comparative result, and adjustment module is regulated the working temperature of described LD according to the comparative result that described comparison module obtains; Can make the laser of LD output have constant fixed wave length state, thereby make LD be suitable for fields such as optical fiber communication for LD provides stable working temperature environment.
Description of drawings
In order to be illustrated more clearly in the technical scheme among the utility model embodiment, the accompanying drawing of required use is done to introduce simply in will describing embodiment below, apparently, accompanying drawing in describing below only is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of a kind of attemperating unit for semiconductor laser of providing of the utility model embodiment one;
Fig. 2 is the structural representation of a kind of attemperating unit for semiconductor laser of providing of the utility model embodiment two;
Fig. 3 is the structural representation of the comparison module that provides of the utility model embodiment two;
Fig. 4 is the structural representation of the amplifying circuit that provides of the utility model embodiment two.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing the utility model embodiment is described in further detail.
Embodiment one
The utility model embodiment one provides a kind of attemperating unit for semiconductor laser, and referring to Fig. 1, this device comprises:
The temperature measurement module 101 that is used for the working temperature of measurement LD, working temperature for the LD that temperature measurement module 101 is measured compares with the reference temperature of being scheduled to, obtain the comparison module 102 of comparative result, and for the comparative result that obtains according to comparison module 102, regulate the adjustment module 103 of the working temperature of LD.
Wherein, comparison module 102 is connected with adjustment module 103 with temperature measurement module 101 respectively.
The beneficial effect that the said apparatus that the utility model embodiment provides brings is: the working temperature of measuring LD by temperature measurement module, comparison module compares the working temperature of the LD that described temperature measurement module is measured with the reference temperature of being scheduled to, obtain comparative result, and adjustment module is regulated the working temperature of described LD according to the comparative result that described comparison module obtains; Can make the laser of LD output have constant fixed wave length state, thereby make LD be suitable for fields such as optical fiber communication for LD provides stable working temperature environment.
Embodiment two
The utility model embodiment two provides a kind of attemperating unit for semiconductor laser, referring to Fig. 2, this device comprises: the temperature measurement module 201 that is used for the working temperature of measurement LD, working temperature for the LD that temperature measurement module 201 is measured compares with the reference temperature of being scheduled to, obtain the comparison module 202 of comparative result, and for the comparative result that obtains according to comparison module 202, regulate the adjustment module 203 of the working temperature of LD.Wherein, comparison module 202 is connected with adjustment module 203 with temperature measurement module 201 respectively.
Wherein, temperature measurement module 201 is used for measuring in real time the actual work temperature of LD.Particularly, temperature measurement module 201 can be temperature sensor, thermistor for example, and this temperature sensor can be located on the housing of LD.Preferably, temperature measurement module 201 can be the thermistor of negative temperature coefficient.
Wherein, comparison module 202 is connected with temperature measurement module 201, for the working temperature of the LD that obtains temperature measurement module 201 measurements, and compares the working temperature of LD and predetermined reference temperature, obtains comparative result.
Wherein, referring to Fig. 3, comparison module 202 comprises: first synistor 2021, second synistor 2022, first potentiometer 2023 and power supply Ucc.Particularly, first synistor 2021 is connected with an end of second synistor 2022, and the tie point of first synistor 2021 and second synistor 2022 meets power supply Ucc.First potentiometer 2023 is connected with an end of temperature measurement module 201, and the tie point of first potentiometer 2023 and temperature measurement module 201 meets GND(Ground, ground).First synistor 2021 is connected with the other end of first potentiometer 2023.Second synistor 2022 is connected with the other end of temperature measurement module 201.The resistance of first synistor 2021 and second synistor 2022 equates.
Particularly, the concrete resistance of first potentiometer 2023 has reflected predetermined reference temperature, and this reference temperature can set in advance.
Particularly, temperature measurement module 201, first synistor 2021, second synistor 2022, first potentiometer 2023 and power supply Ucc constitute Wheatstone bridge.Preferably, the type selecting of first synistor 2021 and second synistor 2022 should satisfy same batch of same manufacturer, should guarantee that both temperatures coefficient are consistent as far as possible.In addition, the resistance that also should guarantee first synistor 2021, second synistor 2022, first potentiometer 2023 and temperature measurement module 201 approaches.
Particularly, the tie point of supposing first synistor 2021 and first potentiometer 2023 is A, and second synistor 2022 is B with the tie point of temperature measurement module 201.When the resistance of the resistance of first potentiometer 2023 and temperature measurement module 201 is unequal, can form the electromotive force gradient at tie point A, B place, suppose that this electromotive force gradient is U
ABThis U
ABResulting comparative result after the working temperature that is comparison LD and the predetermined reference temperature, the just temperature signal between the actual work temperature of LD and the reference temperature of being scheduled to.
Further, for realizing high-precision temperature control, when temperature signal is more weak, temperature signal can be amplified processing.Comparison module 202 also comprises amplifying circuit 2024.Amplifying circuit 2024 is used for comparative result amplified and export comparative result after the amplification.
Preferably, as shown in Figure 4, amplifying circuit 2024 can be the instrument amplifying circuit.This amplifying circuit 2024 comprises first operational amplifier A 1, second operational amplifier A 2, the 3rd operational amplifier A 3, the second potentiometer RP, first resistance R 1, second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5 and the 6th resistance R 6.
Wherein, the in-phase input end of first operational amplifier A 1 links to each other with the tie point A of first synistor 2021 with first potentiometer 2023, and the in-phase input end of second operational amplifier A 2 links to each other with the tie point B of temperature measurement module 201 with second synistor 2022.The second potentiometer RP links to each other with an end of first resistance R 1, and the inverting input of first operational amplifier A 1 links to each other with the tie point of first resistance R 1 with the second potentiometer RP.The other end of the second potentiometer RP links to each other with an end of second resistance R 2, and the inverting input of second operational amplifier A 2 links to each other with the tie point of second resistance R 2 with the second potentiometer RP.The output terminal of first operational amplifier A 1 and second operational amplifier A 2 is connected with the end of the 3rd resistance R 3 with the 4th resistance R 4 respectively.The other end of first resistance R 1 is connected on the tie point of first operational amplifier A 1 and the 3rd resistance R 3.The other end of second resistance R 2 is connected on the tie point of second operational amplifier A 2 and the 4th resistance R 4.The other end of the 3rd resistance R 3 links to each other with an end of the 5th resistance R 5, and the inverting input of the 3rd operational amplifier A 3 links to each other with the tie point of the 5th resistance R 5 with the 3rd resistance R 3.The other end of the 4th resistance R 4 links to each other with an end of the 6th resistance R 6, and the in-phase input end of the 3rd operational amplifier A 3 links to each other with the tie point of the 6th resistance R 6 with the 4th resistance R 4.The other end of the 5th resistance R 5 is connected with the output terminal of the 3rd operational amplifier A 3.Another termination GND of the 6th resistance R 6.
Wherein, adjustment module 203 is connected with comparison module 202, for the comparative result that obtains according to comparison module 202, regulates the working temperature of LD.
Particularly, refer again to Fig. 2, adjustment module 203 comprises: be used for according to comparative result, the PID(proportional-integral-differential of indicator signal of the working temperature of LD is regulated in output) regulator 2031, be used for the indicator signal according to PID regulator 2031, the driving circuit 2032 of output driving current and be used for the TEC(Thermoelectric Cooler that under the driving of the drive current of driving circuit 2032 outputs, LD lowered the temperature or heats, semiconductor cooler) 2033.Wherein, driving circuit 2032 is connected with TEC2033 with PID regulator 2031 respectively.
Particularly, PID regulator 2031 is used for the regulating effect of the working temperature of control LD.The course of work of PID regulator 2031 is, at first, and the comparative result after the amplification of PID regulator 2031 input amplifying circuits 2024 outputs (temperature signal between the actual work temperature of the LD after the amplification and the reference temperature of being scheduled to).Secondly, PID regulator 2031 calculates the temperature range that needs adjusting according to the reference temperature that presets and this comparative result.Suppose that reference temperature is 25 degree, comparative result is-2 degree (can obtain according to the corresponding relation of temperature signal and temperature), and then the temperature range that need regulate can be 23～25 degree.Then, the temperature range that PID regulator 2031 is regulated according to need calculates the required drive current of TEC2033 work.At last, the indicator signal that PID regulator 2031 produces and output is corresponding with this drive current.What deserves to be explained is that PID regulator 2031 is regulated algorithm calculating according to PID and needed the temperature range of adjusting and required drive current.For example, the proportional control in the PID regulator 2031 partly determines to regulate the time of temperature, and integration and differential control section determine to regulate the speed of temperature, regulate the time of temperature and the regulating effect that speed has namely embodied temperature.This is well known technology, is not described in detail in this.
Particularly, the indicator signal that driving circuit 2032 input PID regulators 2031 produce, and produce the drive current of this indicator signal indication.TEC2033 will lower the temperature or heating operation to LD under the driving of drive current.What deserves to be explained is that the structure of driving circuit 2032 and TEC2033 is not described in detail in this with the structure of existing driving circuit and TEC.
Particularly, TEC2033 can be located at the surface of shell of LD by copper, and correspondingly, temperature measurement module 201 can be located in this copper.Because copper has good thermal diffusivity, therefore, temperature measurement module 201 can be measured the working temperature of LD better more equably, and TEC2033 also can lower the temperature or heating operation to LD better.
Further, in order to dispel the heat better, this device also comprises the heat radiator (not shown).This heat radiator can be located at the TEC2033 surface.
Below the simple course of work of describing the attemperating unit that present embodiment provides:
When the working temperature of LD less than reference temperature, namely when temperature measurement module 201(is the thermistor of negative temperature coefficient) resistance during greater than the resistance of first potentiometer 2023, U
ABFor negative, 2032 outputs of PID regulator 2031 indication driving circuits drive the drive current that the LD of TEC2033 heats; When the working temperature of LD greater than reference temperature, namely when the resistance of temperature measurement module 201 during less than the resistance of first potentiometer 2023, U
ABFor just, 2032 outputs of PID regulator 2031 indication driving circuits drive the drive current that the LD of TEC2033 lowers the temperature.
The beneficial effect that the said apparatus that the utility model embodiment provides brings is: the working temperature of measuring LD by temperature measurement module, comparison module compares the working temperature of the LD that described temperature measurement module is measured with the reference temperature of being scheduled to, obtain comparative result, and adjustment module is regulated the working temperature of described LD according to the comparative result that described comparison module obtains; Can make the laser of LD output have constant fixed wave length state, thereby make LD be suitable for fields such as optical fiber communication for LD provides stable working temperature environment.
Above-mentioned the utility model embodiment sequence number does not represent the quality of embodiment just to description.
The above only is preferred embodiment of the present utility model, and is in order to limit the utility model, not all within spirit of the present utility model and principle, any modification of doing, is equal to replacement, improvement etc., all should be included within the protection domain of the present utility model.
Claims (6)
1. attemperating unit that is used for semiconductor laser is characterized in that described device comprises:
The temperature measurement module that is used for the working temperature of the described semiconductor laser of measurement, being used for the working temperature that described temperature measurement module is measured and the reference temperature of being scheduled to compares, obtain the comparison module of comparative result, and for the comparative result that obtains according to described comparison module, regulate the adjustment module of the working temperature of described semiconductor laser, described comparison module is connected with described adjustment module with described temperature measurement module respectively.
2. device according to claim 1 is characterized in that, described comparison module comprises first synistor, second synistor, first potentiometer and power supply;
Described first synistor is connected with an end of described second synistor, and the tie point of described first synistor and described second synistor connects described power supply, described first potentiometer is connected with an end of described temperature measurement module, and the tie point ground connection of described first potentiometer and described temperature measurement module, described first synistor is connected with the other end of described first potentiometer, described second synistor is connected with the other end of described temperature measurement module, and the resistance of described first synistor and described second synistor equates.
3. device according to claim 2, it is characterized in that, described comparison module also comprises amplifying circuit, and described amplifying circuit comprises first operational amplifier, second operational amplifier, the 3rd operational amplifier, second potentiometer, first resistance, second resistance, the 3rd resistance, the 4th resistance, the 5th resistance and the 6th resistance;
The in-phase input end of described first operational amplifier links to each other with the tie point of described first potentiometer with described first synistor, the in-phase input end of described second operational amplifier links to each other with the tie point of described temperature measurement module with described second synistor, described second potentiometer links to each other with an end of described first resistance, the inverting input of described first operational amplifier links to each other with the tie point of described first resistance with described second potentiometer, the other end of described second potentiometer links to each other with an end of described second resistance, the inverting input of described second operational amplifier links to each other with the tie point of described second resistance with described second potentiometer, the output terminal of described first operational amplifier and described second operational amplifier is connected with an end of described the 3rd resistance and described the 4th resistance respectively, the other end of described first resistance is connected on the tie point of described first operational amplifier and described the 3rd resistance, the other end of described second resistance is connected on the tie point of described second operational amplifier and described the 4th resistance, the other end of described the 3rd resistance links to each other with an end of described the 5th resistance, the inverting input of described the 3rd operational amplifier links to each other with the tie point of described the 5th resistance with described the 3rd resistance, the other end of described the 4th resistance links to each other with an end of described the 6th resistance, the in-phase input end of described the 3rd operational amplifier links to each other with the tie point of described the 6th resistance with described the 4th resistance, the other end of described the 5th resistance is connected with the output terminal of described the 3rd operational amplifier, the other end ground connection of described the 6th resistance.
4. device according to claim 1 is characterized in that, described adjustment module comprises:
Be used for according to comparative result, output regulate described semiconductor laser working temperature indicator signal the proportional-integral-differential regulator, be used for the indicator signal according to described proportional-integral-differential regulator, the driving circuit of output driving current and be used for the semiconductor cooler of under the driving of the drive current of described driving circuit output described semiconductor laser being lowered the temperature or heating, described driving circuit is connected with described semiconductor cooler with described proportional-integral-differential regulator respectively.
5. device according to claim 4 is characterized in that, described device also comprises the heat radiator that is located at described semiconductor cooler surface.
6. according to each described device of claim 1-5, it is characterized in that described temperature measurement module is thermistor.
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| CN 201320063230 CN203164796U (en) | 2013-02-04 | 2013-02-04 | Temperature control apparatus for semiconductor laser |
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| CN 201320063230 CN203164796U (en) | 2013-02-04 | 2013-02-04 | Temperature control apparatus for semiconductor laser |
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Cited By (7)
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| CN105395309A (en) * | 2015-12-21 | 2016-03-16 | 攀枝花学院 | Temperature control circuit of hot-water bag and hot-water bag |
| CN105487574A (en) * | 2016-02-01 | 2016-04-13 | 江汉大学 | Temperature control system for laser, and method and apparatus for high-sensitivity detection |
| CN106370395A (en) * | 2016-11-15 | 2017-02-01 | 江汉大学 | Semiconductor laser light source body optimal temperature detection method |
| CN106441809A (en) * | 2016-11-15 | 2017-02-22 | 江汉大学 | Semiconductor laser light source body optimal temperature detection device |
| CN109088305A (en) * | 2018-10-29 | 2018-12-25 | 深圳技术大学（筹） | A kind of laser light source |
| CN109656281A (en) * | 2017-10-11 | 2019-04-19 | 湖南中部芯谷科技有限公司 | A kind of optical fibre gyro thermoelectric cooling control system |
| CN109916532A (en) * | 2019-04-12 | 2019-06-21 | 华能国际电力股份有限公司 | Gas turbine combustion temperature monitoring system based on TDLAS technology |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105395309A (en) * | 2015-12-21 | 2016-03-16 | 攀枝花学院 | Temperature control circuit of hot-water bag and hot-water bag |
| CN105395309B (en) * | 2015-12-21 | 2018-05-08 | 攀枝花学院 | The temperature control circuit and hot-water bag of hot-water bag |
| CN105487574A (en) * | 2016-02-01 | 2016-04-13 | 江汉大学 | Temperature control system for laser, and method and apparatus for high-sensitivity detection |
| CN106370395A (en) * | 2016-11-15 | 2017-02-01 | 江汉大学 | Semiconductor laser light source body optimal temperature detection method |
| CN106441809A (en) * | 2016-11-15 | 2017-02-22 | 江汉大学 | Semiconductor laser light source body optimal temperature detection device |
| CN106441809B (en) * | 2016-11-15 | 2019-02-05 | 江汉大学 | Semiconductor laser light source body optimum temperature detection device |
| CN106370395B (en) * | 2016-11-15 | 2019-06-07 | 江汉大学 | Semiconductor laser light source body optimum temperature detection method |
| CN109656281A (en) * | 2017-10-11 | 2019-04-19 | 湖南中部芯谷科技有限公司 | A kind of optical fibre gyro thermoelectric cooling control system |
| CN109088305A (en) * | 2018-10-29 | 2018-12-25 | 深圳技术大学（筹） | A kind of laser light source |
| CN109916532A (en) * | 2019-04-12 | 2019-06-21 | 华能国际电力股份有限公司 | Gas turbine combustion temperature monitoring system based on TDLAS technology |
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Granted publication date: 20130828 Termination date: 20140204 |