CN106370395A - Semiconductor laser light source body optimal temperature detection method - Google Patents
Semiconductor laser light source body optimal temperature detection method Download PDFInfo
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- CN106370395A CN106370395A CN201611005349.XA CN201611005349A CN106370395A CN 106370395 A CN106370395 A CN 106370395A CN 201611005349 A CN201611005349 A CN 201611005349A CN 106370395 A CN106370395 A CN 106370395A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000001514 detection method Methods 0.000 title claims abstract description 31
- 238000012545 processing Methods 0.000 claims description 33
- 238000012937 correction Methods 0.000 claims description 32
- 238000007689 inspection Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 17
- 230000006641 stabilisation Effects 0.000 claims description 10
- 238000011105 stabilization Methods 0.000 claims description 10
- 238000004458 analytical method Methods 0.000 claims description 6
- 238000005070 sampling Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 7
- 230000036760 body temperature Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 2
- 238000013507 mapping Methods 0.000 abstract 4
- NIFIFKQPDTWWGU-UHFFFAOYSA-N pyrite Chemical compound [Fe+2].[S-][S-] NIFIFKQPDTWWGU-UHFFFAOYSA-N 0.000 description 20
- 229910052683 pyrite Inorganic materials 0.000 description 20
- 239000011028 pyrite Substances 0.000 description 20
- 230000033228 biological regulation Effects 0.000 description 19
- 230000005611 electricity Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
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- Semiconductor Lasers (AREA)
Abstract
The invention provides a semiconductor laser light source body optimal temperature detection method which is characterized by comprising the following steps: light intensity signals of a light source body are detected via a central controller at different temperature, a mapping curve of light source body temperature and light intensity is obtained, a temperature value of an inflection point of the mapping curve of light source body temperature and light intensity is taken as an average value, a plurality of specified temperature values are chosen, and the central controller controls the light source body to send error correcting voltage when a certain specified temperature value is reached; mapping curves, corresponding to all specified temperature values, of error correcting voltage and optical detection voltage can be obtained; a gradient between a point with maximum optical detection voltage and a point with minimum optical detection voltage in each mapping curve of error correcting voltage and optical detection voltage is calculated; a specified temperature value corresponding to a maximum gradient is chosen as a temperature control temperature value for the light source body. An aim of the invention is to provide the semiconductor laser light source body optimal temperature detection method to overcome defects of technologies of the prior art, and an optimal working state of the light source body can be effectively obtained.
Description
Technical field
The invention belongs to semiconductor laser production field is and in particular to a kind of semiconductor laser light source body optimum temperature
Detection method.
Background technology
Since First semiconductor laser in 1962 is born, through the research of decades, the grinding of semiconductor laser
Study carefully and achieve significant progress, wavelength gradually expands from infrared, HONGGUANG to blue green light, coverage, and various performance parameters also have
Very big raising.Compare with other types of laser instrument, semiconductor laser, due to wave-length coverage width, makes simple, cost
Low, be easy to produce in a large number, and there is the features such as small volume, lightweight, life-span length, at optical communication, spectrum analyses, optical information
Industry and the technology such as reason, medical treatment and the basic and applied research aspect such as life science and military affairs have a wide range of applications.
Although semiconductor laser has many advantages, in actual applications, they have the shortcomings that obvious again: defeated
Going out frequency is easily affected by ambient temperature and injection current, and generally in 100mhz, adjustability also compares output linewidth
Difference.In order to overcome disadvantages mentioned above, people adopt the method for extended cavity: using the rear end face composition of diffraction grating and laser diode
One extended cavity, constitutes the laser instrument of littrow structure.1 grade of light that diffraction grating produces feeds back to laser diode and realizes
Light feeds back.Live width and chamber length due to exporting laser are inversely proportional to, thus can significantly narrow laser using extended cavity and light feedback
Live width, generally can be to below 5mhz.And the angle of diffraction grating and incident illumination directly determines the output frequency of laser
Value, therefore diffraction grating serves the effect of modeling again.Laser instrument can be realized by the angle adjusting diffraction grating do not jumping
Mould situation lower frequency (generally can reach ghz) on a large scale scanning, if injection current coordinate grating angle one change, no
The adjustable extent of mode hopping can increase to 5ghz.However, the change of the output frequency with laser, the outbound course of laser
Also can change.Therefore, in many application scenarios, particularly have optical fiber coupling and light path longer in the case of this is one
Larger problem.For the problem overcoming light path to change, people employ two kinds of solutions: one is to have invented littman knot
The semiconductor laser of structure.In littman structure, 1 grade of light of optical grating diffraction is reflected on a face total reflective mirror, from total reflective mirror
0 grade of light after grating again diffraction for the light reflecting is as the output of laser.Because the regulation of laser frequency is to pass through
Change the angle of reflecting mirror and do not change the angle realization of grating, when therefore laser frequency is adjusted, outbound course is constant；Two be
In littrow structure, added a beam splitting chip between laser diode and grating, from beam splitting chip reflection light as laser
Output light, the angle due to beam splitting chip does not change, and the direction of therefore laser output does not change.In both the above method, it is all
To lose laser output power as cost.For example in littman structure, usual delivery efficiency only has the one of littrow structure
Half, this lot of be very unfavorable to the occasion that power requires.Therefore, a kind of more satisfactory scheme is in littrow knot
On the basis of structure, a reflecting mirror is added on laser output light path, the angle one of reflecting mirror and grating changes, thus realizing swashing
The constant purpose of light output direction.Simultaneously as in the design that adopts of the semiconductor laser of commercialization, laser diode and grating
Installation be detached, because mechanical instability can inevitably cause the output frequency of semiconductor laser unstable
Property.Additionally, presently commercially available semiconductor laser is all using monolayer constant temperature system.Due to only having monolayer temperature control, so being easily subject to
The impact of variation of ambient temperature, thus also can affect the frequency stability of semiconductor laser output, meanwhile, in general temperature control
In circuit, temperature sensing is all realized using single critesistor, if this resistance breaks down, will be unable to provide the temperature of reality,
Thus causing temperature controlled failure.In prior art, the temperature adjustment of light source body due to optimum temperature cannot be determined, often very
The difficult optimum state playing light source body.
Content of the invention
The purpose of the present invention is aiming at the defect of prior art, provides a kind of semiconductor laser light source body optimum temperature
Detection means and its method, effectively realize the multilamellar temperature control to light source body, ensure that control temperature selects to reach optimum efficiency simultaneously.
The invention provides a kind of semiconductor laser light source body optimum temperature detection method is it is characterised in that include following
Step:
Central controller detects the light intensity signal of light source body under different temperatures, obtains light source temperature corresponding with light intensity bent
Line；At the flex point with the homologous thread of light intensity for the light source temperature, temperature value takes multiple assigned temperatures for intermediate value；Central authorities control
Device controls light source body to reach transmission correction voltage during some assigned temperature, is derived from each assigned temperature respective to having
Correction voltage and light examine voltage homologous thread；Calculate light inspection voltage in each correction voltage and the homologous thread of light inspection voltage
For the slope between maximum and 2 points of minima；Choose the temperature control temperature of the corresponding assigned temperature of greatest gradient light source body the most
Degree.
Technique scheme comprises the following steps:
The first step, central controller only exports different temperature to light source body by main control module, is examined by light simultaneously
Survey module and carry out luminosity sampling, obtain the homologous thread of light source temperature and light intensity；
Second step, analysis light source temperature and the corresponding relation of light intensity, obtain the flex point of light source temperature and the Relationship of Light intensity
Data, central processing unit controls main control module stably to export the temperature value of flex point data in light source temperature；
3rd step, determines the adjusting range of light source temperature, in adjusting range with the temperature value of flex point data for intermediate value
The multiple assigned temperatures of interior uniform selection, central processing unit starts secondary control module and controls light source temperature to reach assigned temperature；
4th step, when light source temperature reaches some assigned temperature, central processing unit sends even to laser module
The continuous correction voltage signal being incremented by, obtains through light detection module and feeds back in frequency stabilization module after corresponding light intensity signal, through frequency stabilization
Resume module feeds back to laser module again, and central processing unit accesses the light inspection electricity that laser module obtains corresponding reflection light intensity
Pressure signal, thus obtain correction voltage and the homologous thread of light inspection voltage；Each assigned temperature is electric to there being respective correction
Pressure and the homologous thread of light inspection voltage；
5th step, asking for light inspection voltage in each correction voltage and the homologous thread of light inspection voltage is maximum and minimum
Slope between 2 points of value；
6th step, relatively multiple slopes, obtain maximum therein, and choose the corresponding assigned temperature of greatest gradient the most
The control temperature of light source body.
5th step of technique scheme includes judging to select correction voltage and light to examine the homologous thread glazing inspection of voltage
Voltage, closest to 0 point, records the value of this point corresponding correction voltage simultaneously, this position is set to initial point；In correction voltage
The point of equal number is respectively taken on initial point both sides respectively on the axle of place, this above-mentioned point data is carried out curve fitting, draw corresponding
Slope value.
The dispute voltage output value collecting in 5th step of technique scheme is communicated with pc through central processing unit and deposits
Enter in single file, and it is processed, draw light inspection voltage max in correction voltage and light inspection voltage homologous thread
vhAnd minima vl, and record this moment corresponding voltage h that rectifies a deviationfAnd lf, i.e. the magnitude of voltage of central processing unit d/a output.
The dispute voltage of technique scheme and light inspection voltage are one-to-one relation.
The invention provides a kind of semiconductor laser light source body optimum temperature detection means it is characterised in that: it includes
Light source body, is contained within the luminous body in existing laser instrument, is positioned in mounting box；
Main control module, the temperature including the power transistor being arranged within mounting box with for detecting light source temperature
Sensor, by the comparative result of the output voltage of temperature sensor and main control module inner setting magnitude of voltage, controls power
The on off state of transistor realizes the leading temperature control effect to luminous body；
Secondary control module, including the pyrite base being arranged at mounting box bottom, pyrite base is provided with for detecting
The critesistor of light source temperature, sets the comparative result of resistance by critesistor resistance and control secondary control module,
Pyrite base semiconductor cooling piece "on" position is controlled to realize the auxiliary temperature control effect to light source body；
Light detection module, the key light for exporting to laser instrument carries out intensity detection, obtains light intensity signal；
Laser module, receives the order from central processing unit and controls laser instrument output key light according to it；
Frequency stabilization module, receives and feeds back to laser module after the light intensity signal process of light detection module, realize to sharp
Light device exports the frequency stabilization of key light；
Central processing unit, sends correction voltage signal to laser module, receives the light intensity signal from light detection module
With the temperature signal from temperature sensor and critesistor, by analyzing and processing correction voltage signal, light intensity signal and temperature
Signal determines the control temperature of light source body, and adjusts inner setting magnitude of voltage and the auxiliary control of main control module according to control temperature
The setting resistance electricity value of molding block；
It is brilliant that described main control module includes temperature sensor, the first manostat, first comparator, homophase follower and power
Body pipe；The input of the first stabilivolt connects the first power supply, and the outfan of the first stabilivolt connects to the positive pole of first comparator
Input；The output of the first stabilivolt is inner setting magnitude of voltage to the magnitude of voltage of first comparator；Temperature sensor detection light
Source temperature output voltage to first comparator negative input；The outfan of first comparator connects through homophase follower
Base stage to power transistor；The collector of power transistor connects to power supply, the grounded emitter of power transistor.
It is in series with multiple auxiliary transistors between described power transistor and power supply.Described power transistor and multiple auxiliary
Transistor is uniformly arranged on the corner in mounting box respectively.
The outfan of described first stabilivolt is grounded through the 3rd fixed value resistance and the first adjustable resistance, the first adjustable resistance
Adjustment termination connects to the electrode input end of first comparator.
Described secondary control module include the second manostat, instrument amplifier, operational amplifier, the first audion, second
Audion, the 3rd audion, the 4th audion and semiconductor chilling plate；The input of the second manostat connects second source, the
The digital regulation resistance ground connection through the first fixed value resistance with for reflecting pyrite base temperature for first outfan of two manostat；Second
Second outfan of manostat is grounded through the second fixed value resistance and the second adjustable resistance；Second adjustable resistance is to set resistance；Instrument
The in-phase end of table amplifier is connected between the first fixed value resistance and digital regulation resistance；The backward end of instrument amplifier is connected to can
Adjust on the joint of resistance；The colelctor electrode of the second audion connects the 3rd power supply, and the emitter stage of the second audion connects the four or three pole
The colelctor electrode of pipe, the grounded emitter of the 4th audion；The base stage of colelctor electrode connection second audion of the first audion, first
The emitter stage of audion connects the colelctor electrode of the 3rd audion, and the emitter stage of the 3rd audion connects the base stage of the 4th audion,
The base stage of the base stage of the first audion and the 3rd audion connects；The outfan of instrument amplifier is connected to through operational amplifier
Between the base stage of the base stage of one audion and the 3rd audion；Semiconductor chilling plate one end is connected to sending out of the second audion
Between the colelctor electrode of emitter-base bandgap grading and the 4th audion and between the emitter stage of the first audion and the colelctor electrode of the 3rd audion；Partly lead
The body cooling piece other end is grounded.
Described instrument amplifier realizes the adjustable of amplification by the 3rd adjustable resistance.
Described critesistor includes multiple and is evenly arranged on pyrite base, and central processing unit receives and is derived from multiple temperature-sensitives
The resistance value information of resistance is simultaneously compared to it, and transmitting control commands, to digital regulation resistance, make the resistance of digital regulation resistance
Meansigma methodss for two close critesistor resistance values of numerical value.
The present invention is evenly arranged with transistor by the internal corner of mounting box in light source body, when it turns on, can release
Substantial amounts of heat, by this heat it is possible to heat to the light source body of laser instrument.Main control module passes through temperature sensor
Realize the real-time detection to light source temperature.Central processing unit is by realizing to the first manostat to the regulation of the first adjustable resistance
Export to the Voltage Cortrol of first comparator, that is, adjust the builtin voltage setting value of main control module, meet different use need
Ask.The first comparator of main controller module is according to the comparative structure control of temperature sensor output voltage and inner setting magnitude of voltage
Cut-offfing of transistor processed, realizes the control to heated condition.It has been evenly arranged critesistor on the pyrite base of mounting box, multiple
The resistance of critesistor is input to central processing unit, and central processing unit is compared to multiple resistances, then that numerical value is close
The meansigma methodss of two resistance values are defeated by digital regulation resistance, on the one hand can realize the measurement to multiple spot, improve the efficiency of temperature control；Separately
On the one hand, situation about breaking down when one of critesistor, any one critesistor damages will not be to digital regulation resistance
Resistance produce impact.Secondary control module passes through digital regulation resistance resistance and the comparison of the second adjustable resistance resistance is realized to light
Whether source temperature suitably judges, when the temperature of pyrite base plate is below or above design temperature, flows through the electric current meeting of cooling piece
Difference, thus realizing the different purposes heating and freezing, to reduce the temperature difference between pyrite temperature and design temperature, is finally reached
Mutually synthermal.By analysis, the present invention judges that correction voltage signal, light intensity signal and temperature signal determine the temperature control temperature of light source body
Degree is it is ensured that light source body reaches optimum efficiency.
The present invention realizes, by main control module, the change control that light source body problem goes up on a large scale；By assist control mould
Block is realized light source body problem and is controlled in the change of specified small range, and thermometric precision is effectively ensured.The present invention passes through to divide
Analysis judges correction voltage signal, light intensity signal and temperature signal determines the control temperature of light source body it is ensured that light source body reaches most preferably
Effect.
Brief description
Fig. 1 is local circuit schematic diagram a of the present invention；
Fig. 2 is local circuit schematic diagram b of the present invention；
Fig. 3 is present configuration schematic diagram；
Fig. 4 is that the present invention uses schematic diagram a；
Fig. 5 is that the present invention uses schematic diagram b.
Specific embodiment
The present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings, is easy to be well understood to this
Bright, but they do not constitute restriction to the present invention.
As shown in Figure 1 the invention provides a kind of semiconductor laser light source body optimum temperature detection means, its feature exists
In: it includes
Light source body, is contained within the luminous body in existing laser instrument, is positioned in mounting box；
Main control module, the temperature including the power transistor being arranged within mounting box with for detecting light source temperature
Sensor, by the comparative result of the output voltage of temperature sensor and main control module inner setting magnitude of voltage, controls power
The on off state of transistor realizes the leading temperature control effect to luminous body；
Secondary control module, including the pyrite base being arranged at mounting box bottom, pyrite base is provided with for detecting
The critesistor of light source temperature, sets the comparative result of resistance by critesistor resistance and control secondary control module,
Pyrite base semiconductor cooling piece "on" position is controlled to realize the auxiliary temperature control effect to light source body；
Light detection module, the key light for exporting to laser instrument carries out intensity detection, obtains light intensity signal；
Laser module, receives the order from central processing unit and controls laser instrument output key light according to it；
Frequency stabilization module, receives and feeds back to laser module after the light intensity signal process of light detection module, realize to sharp
Light device exports the frequency stabilization of key light；
Central processing unit, sends correction voltage signal to laser module, receives the light intensity signal from light detection module
With the temperature signal from temperature sensor and critesistor, by analyzing and processing correction voltage signal, light intensity signal and temperature
Signal determines the control temperature of light source body, and adjusts inner setting magnitude of voltage and the auxiliary control of main control module according to control temperature
The setting resistance electricity value of molding block；
Described main control module includes temperature sensor t1, the first manostat u3, first comparator u5, homophase follower u6
With power transistor q5；The input of the first stabilivolt u3 connects the first power supply；The outfan of described first stabilivolt u3 is through
Three fixed value resistance r16 and the first adjustable resistance r17 ground connection, the adjustment termination of the first adjustable resistance r17 connects to first comparator
The electrode input end of u5.The output of the first stabilivolt u3 is inner setting magnitude of voltage to the magnitude of voltage of first comparator；Temperature passes
Sensor t1 detects light source temperature output voltage to the negative input of first comparator u5；The outfan of first comparator u5
Connect to the base stage of power transistor q5 through homophase follower u6；The collector of power transistor connects to power supply, power crystal
The grounded emitter of pipe.It is in series with 3 auxiliary transistor q6-q8 between described power transistor and power supply.Described power crystal
Pipe and multiple auxiliary transistors are uniformly arranged on the corner in mounting box respectively.
During use, first, by the temperature of temperature sensor t1 probe source body, temperature sensor t1 output voltage and
The reference voltage that first manostat u3 is given is compared by the first amplifier, if the voltage at its 3 end is higher than 2 terminal voltages, 1
It is output as positive voltage；If 3 terminal voltages are equal to or less than 2 terminal voltages, 1 end is output as 0.The voltage of the first amplifier 1 end output
Export to power transistor q5 after homophase follower.If the voltage between the base stage of power transistor q5 and emitter stage is big
In 1.4v, then power transistor q5 conducting, otherwise power transistor q5 is not turned on.The base voltage of auxiliary q6, q7 and q8 is respectively
For 22.5v, 15v and 7.5v.If power transistor q5 turns on, the catcher voltage of power transistor q5 is about 1.4v, due to
The emitter stage of auxiliary transistor q8 is connected with the collector of power transistor q5, and the emitter voltage of therefore auxiliary transistor q8 is
1.4v.Because the voltage between the base stage of auxiliary transistor q8 and emitter stage is 6.1v, more than 1.4v, therefore auxiliary transistor q8
Can turn on.After auxiliary transistor q8 conducting, the voltage of collector is 7.5v, the emitter stage of auxiliary transistor q7 and aid crystal
The collector of pipe q8 is connected, and therefore the emitter voltage of auxiliary transistor q7 is 7.5v.Due to auxiliary transistor q7 base stage and
Voltage between emitter stage is 7.5v, and more than 1.4v, therefore auxiliary transistor q7 can turn on.Receive after auxiliary transistor q7 conducting
The voltage of collector is 15v, and the emitter stage due to auxiliary transistor q6 is connected with the collector of auxiliary transistor q7, therefore assists brilliant
The emitter voltage of body pipe q6 is 15v.Because the base stage of auxiliary transistor q6 and the voltage of emitter stage are 7.5v, therefore assist brilliant
Body pipe q6 can turn on.Auxiliary transistor q6, the position of auxiliary transistor q7, auxiliary transistor q8 and power transistor q5 are located at box
Four angles of son.When auxiliary transistor q6, auxiliary transistor q7, auxiliary transistor q8 and power transistor q5 turn on, can put
Go out substantial amounts of heat, by this heat it is possible to heat to the light source body of laser instrument.
Described secondary control module includes the second manostat u1, instrument amplifier u2, operational amplifier u4, the first audion
Q1, the second audion q2, the 3rd audion q3, the 4th audion q4 and semiconductor chilling plate r15；The input of the second manostat u1
End connects second source, and u1 first outfan of the second manostat through the first fixed value resistance r1 and is used for reflecting pyrite base temperature
Digital regulation resistance r3 ground connection；Second outfan of the second manostat connects through the second fixed value resistance r2 and the second adjustable resistance r4
Ground；Second adjustable resistance r4 is to set resistance；The in-phase end of instrument amplifier u2 is connected to the first fixed value resistance r1 and numeral electricity
Between the device r3 of position；The backward end of instrument amplifier u2 is connected on the joint of the second adjustable resistance；The current collection of the second audion q2
Pole connects the 3rd power supply, and the emitter stage of the second audion q2 connects the colelctor electrode of the 4th audion q4, and the 4th audion q4 sends out
Emitter grounding；The colelctor electrode of the first audion q1 connects the base stage of the second audion q2, and the emitter stage of the first audion q1 connects
The colelctor electrode of the 3rd audion q3, the emitter stage of the 3rd audion q3 connects the base stage of the 4th audion q4, the first audion q1
Base stage and the 3rd audion q3 base stage connect；The outfan of instrument amplifier is connected to the first audion through operational amplifier
Between the base stage of the base stage of q1 and the 3rd audion q3；Semiconductor chilling plate r15 one end is connected to the second audion q2's
Between the colelctor electrode of emitter stage and the 4th audion q4 and the emitter stage of the first audion q1 and the colelctor electrode of the 3rd audion q3
Between；The semiconductor chilling plate r15 other end is grounded.Described instrument amplifier realizes amplification by the 3rd adjustable resistance r5
Adjustable.
Described critesistor includes multiple and is evenly arranged on pyrite base, and central processing unit receives and is derived from multiple temperature-sensitives
The resistance value information of resistance is simultaneously compared to it, and transmitting control commands, to digital regulation resistance, make the resistance of digital regulation resistance
Meansigma methodss for two close critesistor resistance values of numerical value.In order to eliminate the temperature difference at each position of pyrite base, in Huang
The diverse location of copper pedestal disposes the critesistor of 3 same model, and the resistance of 3 critesistor is input to central authorities' process
Device, central processing unit is compared to three resistances, then the meansigma methodss of two close for numerical value resistance values is defeated by numeral electricity
Position device r3.The advantage of this scheme is: on the one hand can realize the measurement to multiple spot, improve the efficiency of temperature control, as long as because
Any one in two resistance being taken changes the change that all can bring meansigma methodss, thus causing the resistance of digital regulation resistance r3
The change of value.On the other hand, this scheme also can tackle the situation that one of critesistor breaks down, any one temperature-sensitive electricity
Resistance damages and will not produce impact to the resistance of digital regulation resistance r3.
During use, the second manostat u1 is 10v voltage reference, exports stable 10v voltage, this voltage is through bridge circuit
It is input to in-phase end and the end of oppisite phase of instrument amplifier u2 afterwards.Wherein anti-phase terminal voltage is reference voltage, by the second definite value electricity
The resistance value ratio of resistance r2 and the second adjustable resistance r4 determines.Adjust the resistance value of the second adjustable resistance r4 by central processing unit, can
To adjust the input voltage of end of oppisite phase, thus the temperature required for setting.R3 is digital regulation resistance, is carried out using central processing unit
Control.Detect the actual temperature of pyrite base using critesistor.The voltage of the in-phase end of instrument amplifier u2 depends on first
The ratio of the resistance value of fixed value resistance r1 and digital regulation resistance r3.Due to the equal 100k of the resistance of two fixed value resistances, therefore, instrument is put
The in-phase end of big device u2 and whose voltage height of end of oppisite phase will be determined by the size of digital regulation resistance r3 and the second adjustable resistance r4.If
The temperature of pyrite base plate is less than the temperature setting, because the critesistor of temperature detection is negative temperature coefficient, therefore digital regulation resistance
The resistance of r3 is more than the resistance of the second adjustable resistance r4, thus the homophase terminal voltage of instrument amplifier u2 will be greater than end of oppisite phase electricity
Pressure, at this moment 6 ends of instrument amplifier u2 are output as positive voltage.The amplification of instrument amplifier u2 is passed through to adjust the 3rd adjustable electric
The resistance of resistance r5 is realized.The voltage of instrument amplifier u2 output is changed into negative voltage, so, the 3rd after operational amplifier u3
Audion q3 and the 4th audion q4 conducting, electric current flows to the 3rd audion q3 and the 4th by ground by semiconductor chilling plate r15
Audion q4.Pyrite base will be heated due to when semiconductor chilling plate r15 leads to reverse current, therefore can reduce
The temperature difference between pyrite temperature and design temperature, is finally reached mutually synthermal.If the temperature of pyrite base plate is higher than the temperature setting,
Voltage less than the second adjustable resistance r4, i.e. the homophase terminal voltage of instrument amplifier u2 are less than instead by the voltage of digital regulation resistance r3
Phase terminal voltage.At this time 6 ends of instrument amplifier u2 are output as negative voltage.The voltage of instrument amplifier u2 output is put through computing
Be changed into positive voltage after big device u3, so, the first audion q1 and the second audion q2 conducting, electric current by the 3rd audion q3 and
4th audion q4 passes through semiconductor chilling plate r15 flow direction ground.Because semiconductor chilling plate r15 leads to when forward current to Huang
Copper pedestal is freezed, and therefore can reduce the temperature difference between pyrite temperature and design temperature, be finally reached mutually synthermal.
The invention provides a kind of semiconductor laser light source body controlling means are it is characterised in that comprise the following steps:
The first step, central controller only exports different temperature to light source body by main control module, is examined by light simultaneously
Survey module and carry out luminosity sampling, and feed back to central processing unit, obtain the homologous thread of light source temperature and light intensity, as Fig. 4 institute
Show；
Second step, analysis light source temperature and the corresponding relation of light intensity, obtain the flex point of light source temperature and the Relationship of Light intensity
Data: 124.5 degrees Celsius；Central processing unit controls main control module stably to export the temperature value of flex point data in light source body temperature
Degree；
3rd step, determines the adjusting range of light source temperature, in adjusting range with the temperature value of flex point data for intermediate value
The multiple assigned temperatures of interior uniform selection, central processing unit starts secondary control module and controls light source temperature to reach assigned temperature；
The temperature range intending controlling is selected to be 124.0 to 125.0 degrees Celsius, stepping is 0.01 degree Celsius, that is, take 100 data points；
4th step, when light source temperature reaches some assigned temperature, central processing unit sends to laser module and entangles
Bias-voltage signal, obtains through light detection module and feeds back in frequency stabilization module after corresponding light intensity signal, through frequency stabilization resume module again
Feed back to laser module, central processing unit accesses the light inspection voltage signal that laser module obtains corresponding reflection light intensity, from
And obtain correction voltage and the homologous thread of light inspection voltage；Each assigned temperature is electric to having respective correction voltage and light inspection
The homologous thread of pressure, obtains 100 groups of figures as shown in Figure 5；
5th step, asking for light inspection voltage in each correction voltage and the homologous thread of light inspection voltage is maximum and minimum
Slope between 2 points of value；In Fig. 5, transverse axis represents correction voltage (reflecting frequency), the longitudinal axis represents light inspection voltage and (reflects
Light intensity).Frequency interval between peak-to-peak value is f2-f1.The voltage output value collecting is communicated with pc through central processing unit and deposits
Enter in single file, and it is processed, draw the maximum v of y-axis coordinate in curvehAnd minima vl, and record now
Carve corresponding x-axis frequency coordinate hfAnd lf, i.e. the magnitude of voltage of central processing unit d/a output.Need stress be a bit,
During data acquisition, don't fail to ensure often to change the value of an x-axis, record this moment corresponding y-axis magnitude of voltage simultaneously,
They are one-to-one relations.By above-mentioned scheme, in vl-vhIn the range of, select one by the determination methods of software
Close to 0 point, record the value of its x-axis simultaneously, this position is set to initial point (0,0), put according to this respectively to the left and right side of x-axis
Respectively take identical point (for example taking 20 points), this 41 point data are carried out curve fitting, draws corresponding slope value.
6th step, relatively multiple slopes, obtain maximum therein, and choose the corresponding assigned temperature of greatest gradient the most
The control temperature of light source body.Selecting temperature range in corresponding 3rd step of maximum from 100 slope value is 124.0
To 125.0 degrees Celsius some specific temperature value.
The content that this specification is not described in detail belongs to prior art known to professional and technical personnel in the field.
Claims (5)
1. a kind of semiconductor laser light source body optimum temperature detection method is it is characterised in that comprise the following steps:
Central controller detects the light intensity signal of light source body under different temperatures, obtains the homologous thread of light source temperature and light intensity；
At the flex point with the homologous thread of light intensity for the light source temperature, temperature value takes multiple assigned temperatures for intermediate value；Central controller control
Light source body processed reaches and sends correction voltage during some assigned temperature, is derived from each assigned temperature to should have respective entangling
Bias-voltage and the homologous thread of light inspection voltage；Calculating light inspection voltage in each correction voltage and the homologous thread of light inspection voltage is
Slope between big value and 2 points of minima；Choose the control temperature of the corresponding assigned temperature of greatest gradient light source body the most.
2. semiconductor laser light source body optimum temperature detection method according to claim 1 it is characterised in that include with
Lower step:
The first step, central controller only exports different temperature to light source body by main control module, detects mould by light simultaneously
Block carries out luminosity sampling, obtains the homologous thread of light source temperature and light intensity；
Second step, analysis light source temperature and the corresponding relation of light intensity, obtain the flex point data of light source temperature and the Relationship of Light intensity,
Central processing unit controls main control module stably to export the temperature value of flex point data in light source temperature；
3rd step, determines the adjusting range of light source temperature with the temperature value of flex point data for intermediate value, in adjusting range all
The multiple assigned temperatures of even selection, central processing unit starts secondary control module and controls light source temperature to reach assigned temperature；
4th step, when light source temperature reaches some assigned temperature, central processing unit sends to laser module and continuously passs
The correction voltage signal increasing, obtains through light detection module and feeds back in frequency stabilization module after corresponding light intensity signal, through frequency stabilization module
Process and feed back to laser module again, central processing unit accesses the light inspection voltage letter that laser module obtains corresponding reflection light intensity
Number, thus obtaining correction voltage and the homologous thread of light inspection voltage；Each assigned temperature to should have respective correction voltage and
Light examines the homologous thread of voltage；
5th step, asking for light inspection voltage in each correction voltage and the homologous thread of light inspection voltage is maximum and minima
Slope between 2 points；
6th step, relatively multiple slopes, obtain maximum therein, and choose greatest gradient corresponding assigned temperature light source the most
The control temperature of body.
3. semiconductor laser light source body optimum temperature detection method according to claim 2 is it is characterised in that the 5th step
Include judging to select correction voltage and the homologous thread glazing of light inspection voltage to examine the point that voltage is closest to 0, record should simultaneously
The value of point corresponding correction voltage, this position is set to initial point；Respectively take phase on initial point both sides on the axle of correction voltage place respectively
With the point of quantity, this above-mentioned point data is carried out curve fitting, draws corresponding slope value.
4. semiconductor laser light source body optimum temperature detection method according to claim 2 is it is characterised in that the 5th step
In the dispute voltage output value that collects communicate with pc through central processing unit and be stored in single file, and at it
Reason, draws light inspection voltage max v in correction voltage and light inspection voltage homologous threadhAnd minima vl, and it is corresponding to record this moment
Correction voltage hfAnd lf, i.e. the magnitude of voltage of central processing unit d/a output.
5. semiconductor laser light source body optimum temperature detection method according to claim 2 is it is characterised in that dispute is electric
Pressure and light inspection voltage are one-to-one relation.
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