CN204808071U - No surge semiconductor laser temperature control system based on H bridge circuit - Google Patents
No surge semiconductor laser temperature control system based on H bridge circuit Download PDFInfo
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- CN204808071U CN204808071U CN201520464068.5U CN201520464068U CN204808071U CN 204808071 U CN204808071 U CN 204808071U CN 201520464068 U CN201520464068 U CN 201520464068U CN 204808071 U CN204808071 U CN 204808071U
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- semiconductor laser
- surge
- temperature control
- bridge circuit
- temperature
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Abstract
The utility model provides a no surge semiconductor laser temperature control system based on H bridge circuit mainly comprises single -chip computer control module, optoelectronic isolation device, no surge control by temperature change circuit, semiconductor laser and built -in hot electric refrigeration ware (TEC) and temperature sensor. When semiconductor laser was in operating condition, the direct output voltage of temperature sensor imported behind amplifier circuit to single -chip computer control module, handled it through the control of digital PID, converted the result to PWM signal output to optoelectronic isolation device, and no surge control by temperature change circuit will become operating condition 0 through the PWM signal conversion of optoelectronic isolation device, realize heating or refrigeration to semiconductor laser. The utility model discloses a control by temperature change circuit structure possess stronger accuse temperature ability, does not have surge and static, avoids getting into the blind spot, makes semiconductor laser work continually and steadily.
Description
Technical field
The utility model relates to the technical field of temperature control of laser instrument, be specifically related to based on H-bridge circuit without surge semiconductor laser temperature control system.
Background technology
Semiconductor laser is high with its efficiency, volume is little, lightweight, lower-price characteristic plays in fields such as military affairs, medical treatment, production, communications the effect that can not be substituted.It is again a kind of than more sensitive device simultaneously, and the change of every milliampere of electric current can cause the drift of about 0.01nm output wavelength, and the change of every degree celsius temperature can cause the change of about 0.1nm output wavelength.And surge in circuit system, electrostatic even can cause the damage of semiconductor laser, when semiconductor laser normally works, fluctuating of temperature can affect the change of its output power and output wavelength.Along with the increase of laser output power, temperature controlled requirement is also increased thereupon.Therefore, make semiconductor laser temperature obtain stability contorting and there is very important practical significance.
Four main modular such as semiconductor laser inner general integrated laser diode, photodiode, thermistor, thermoelectric refrigerating unit (TEC).Built-in thermistor is generally a kind of resistance of negative temperature coefficient, by the die temperature of corresponding external circuit Real-Time Monitoring laser diode, is the feedback element of temperature control system.TEC is a kind of semiconductor devices that simultaneously can carry out freezing and heat, and pastes (Peltier) effect according to pal, when providing drive current to TEC, and its one side heating, and another side freezes simultaneously; When drive current is reverse, cold and hot surface can exchange.The heating of TEC or refrigerating capacity relevant with the size of drive current, by change drive current realize thermostatic control.
The outside temperature control circuit of current TEC controller mainly contains H-bridge drive circuit, switched mode driving circuitry, linear drive circuit etc.Switched mode driving circuitry controls for the temperature of high-power TEC, but cannot accomplish to realize the stability contorting to temperature, and can not ensure the continual and steady of output power.Linear drive circuit thermal value is large and temperature control efficiency is low.H-bridge circuit can realize the control of noise spectra of semiconductor lasers temperature, has good temperature control effect relative to above-mentioned two kinds of circuit.But adopt the H-bridge circuit of different structure, effect is also inconsistent, the simple H-bridge circuit of structure can not accomplish the stable and soft regulation and control to temperature, be difficult to reach higher control accuracy, during regulation and control, temperature fluctuations scope is large, so easily introduce circuit noise on the contrary, system is difficult to remain stable, thus damages semiconductor laser.
Summary of the invention
, temperature control inefficient weak point unstable for above-mentioned laser instrument temperature control system output power, the utility model provide a kind of based on H-bridge circuit without surge temperature control circuit module, there is stronger temperature control capability, realize the continual and steady temperature controlled temperature control system of noise spectra of semiconductor lasers.
For achieving the above object, the utility model provide a kind of based on H-bridge circuit without surge semiconductor laser temperature control system, comprise single chip control module, optical isolation, temperature sensor and semiconductor laser and built-in thermoelectric refrigerating unit thereof, driving circuit, without surge temperature control circuit, described without surge temperature control electric path control deivce and H-bridge circuit formation, the comparer that described controller is made up of operational amplifier and diode are formed, described H-bridge circuit is made up of four MOSFET, triode and diode is provided with between described controller and H-bridge circuit.
The output terminal of described single chip control module is connected with the input end of temperature control circuit by optical isolation.
Described semiconductor laser built-in thermoelectric refrigerator, is equipped with heating radiator below described laser instrument, is connected by heat-conducting silicone grease.
Described temperature sensor is the thermistor being built in described semiconductor laser, converts temperature signal to voltage signal in real time, and the output terminal of described temperature sensor is connected with the input end of described single chip control module.
The temperature control system of semiconductor laser of the present utility model, has the following advantages:
1, this temperature control system is provided with switch protecting circuit, temperature can be prevented too high and damage semiconductor laser.
2, the operating power needing adjustment semiconductor laser that this temperature control system can be different according to reality, is shown by LCD simultaneously, operates more intuitively easy.
3, this temperature control system do not adopt control chip without surge temperature control circuit, and the comparer be made up of operational amplifier and H-bridge circuit are formed, and output impedance is very little, there is not surge and electrostatic, very little on subsequent conditioning circuit impact, improve the efficiency of temperature control.Be provided with triode and diode between controller and H-bridge circuit, realize soft temperature control and can avoid entering dead band, thus reduce the risk damaging laser instrument to a great extent.
4, this temperature control system and semiconductor laser are detachably separated, and dissimilar semiconductor laser of arranging in pairs or groups, uses convenient.
Accompanying drawing explanation
Fig. 1 is structured flowchart of the present utility model
Fig. 2 is example structure block diagram of the present utility model
Fig. 3 is the schematic diagram without surge temperature control circuit
Primary symbols is described as follows:
1-single chip control module 2-optical isolation 3-is without surge temperature control circuit
4-built-in thermoelectric refrigerator 5-laser instrument 6-temperature sensor
7-input/output control module 8-digital IIR filters 9-A/D changes
10-controller 11-H bridge circuit 12-system power supply module
13-heating radiator 14-driving circuit 15-temperature display module
Embodiment
Now by reference to the accompanying drawings 1 and embodiment the utility model is described in further detail.
As depicted in figs. 1 and 2, the utility model provide a kind of based on H-bridge circuit without surge semiconductor laser temperature control system, by single chip control module 1, optical isolation 2, form without surge temperature control circuit 3, driving circuit 14, heating radiator 13 and laser instrument 5 and built-in thermoelectric refrigerator 4 thereof, system power supply module 12, temperature display module 15.Wherein single chip control module 1 and driving circuit 14 directly have external switch power supply directly to power.The output terminal of single chip control module 1 is connected to without surge temperature control circuit 3 and laser instrument 5 by optical isolation 2.Built-in thermoelectric refrigerator 4 is built in laser instrument 5, and the output terminal of temperature sensor 6 is connected to the input end of single-chip microcomputer 1, forms closed loop, and the temperature realizing noise spectra of semiconductor lasers controls.
Single chip control module 1 comprises input/output control module 7, digital IIR filters 8 and A/D conversion 9.The model of single-chip microcomputer is AVRmega64, converts the simulating signal received to digital signal, by digital IIR filters module, is that PWM pulse width signal exports in optical isolation 2 by results conversion.Temperature display module 15 is connected with input/output control module 7, for showing the working temperature of current lasers 5, plays the effect of Real-Time Monitoring.
Optical isolation 2, by prime signal and rear class Signal separator, realizes the conversion of electric light electricity, avoids signal to be interfered.Optical isolation 2 adopts PS2701-4 chip, can realize the requirement that a constant switching frequency controls.
Be made up of controller 7 and H-bridge circuit 8 without surge temperature control circuit 3, the output terminal of controller 7 is connected with the input end of H-bridge circuit 8, and the input end of controller 7 is connected with the output terminal of optical isolation 2.Signal inputs to H-bridge circuit 8 after controller 7, then exports in built-in thermoelectric refrigerator 9.Wherein, the comparer that controller 7 is made up of amplifier and diode are formed, and the advantage of amplifier is that output impedance is very little, and very little on subsequent conditioning circuit impact, improve the efficiency of temperature control, diode plays the effect of protection circuit.H-bridge circuit 8 forms primarily of four MOSFET, is provided with triode and diode between controller 7 and H-bridge circuit 8.The triode amplifying signal connected, diode makes circuit avoid entering dead band, there is not surge and electrostatic, protection circuit, reduces the risk damaging laser instrument to a great extent.
Heating radiator 13 is directly affixed on below semiconductor laser, and centre scribbles heat-conducting silicone grease, takes away heat in time.
Driving circuit 14 provides continual and steady electric current for laser instrument 5 normally works, real output can regulate according to demand, adopt LT1492 chip, this chip is the operational amplifier of binary channels/four-way, rail-to-rail input and output, input dynamic range is large, while amplification signal, export the electric current of high accurancy and precision.Be provided with switch protecting circuit simultaneously, avoid damaging laser instrument.
As shown in Figure 3, the pwm signal after optical isolation inputs to the input end of the controller be made up of operational amplifier, converts control signal to, and after the H-bridge circuit consisted of MOSFET, noise spectra of semiconductor lasers carries out temperature control.
The foregoing is only better real-time case of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.
Claims (4)
1. one kind based on H-bridge circuit without surge semiconductor laser temperature control system, comprise single chip control module, optical isolation, temperature sensor and semiconductor laser and built-in thermoelectric refrigerating unit thereof, driving circuit, without surge temperature control circuit, it is characterized in that: described is formed without surge temperature control electric path control deivce and H-bridge circuit, the comparer that described controller is made up of operational amplifier and diode are formed, described H-bridge circuit is made up of four MOSFET, is provided with triode and diode between described controller and H-bridge circuit.
2. according to claim 1 based on H-bridge circuit without surge semiconductor laser temperature control system, it is characterized in that: the output terminal of described single chip control module is connected with the described input end without surge temperature control circuit by optical isolation.
3. according to claim 1 based on H-bridge circuit without surge semiconductor laser temperature control system, it is characterized in that: described semiconductor laser built-in thermoelectric refrigerator, below described laser instrument, heating radiator be housed, by heat-conducting silicone grease be connected.
4. according to claim 1 based on H-bridge circuit without surge semiconductor laser temperature control system, it is characterized in that: described temperature sensor is the thermistor being built in described semiconductor laser, convert temperature signal to voltage signal in real time, the output terminal of described temperature sensor is connected with the input end of described single chip control module.
Priority Applications (1)
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CN201520464068.5U CN204808071U (en) | 2015-06-26 | 2015-06-26 | No surge semiconductor laser temperature control system based on H bridge circuit |
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CN201520464068.5U CN204808071U (en) | 2015-06-26 | 2015-06-26 | No surge semiconductor laser temperature control system based on H bridge circuit |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106406377A (en) * | 2016-06-08 | 2017-02-15 | 江苏骏龙光电科技股份有限公司 | Temperature control device of laser at continuous measurement |
CN107967009A (en) * | 2018-01-05 | 2018-04-27 | 北京是卓科技有限公司 | A kind of laser that can be temperature automatically controlled |
CN109161477A (en) * | 2018-08-30 | 2019-01-08 | 北京龙基高科生物科技有限公司 | A kind of temperature-control circuit and its application based on gene sequencing |
CN112731985A (en) * | 2020-12-24 | 2021-04-30 | 中国工程物理研究院核物理与化学研究所 | Dustproof and moistureproof device for regulating and controlling environment temperature of precision instrument with high precision |
-
2015
- 2015-06-26 CN CN201520464068.5U patent/CN204808071U/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106406377A (en) * | 2016-06-08 | 2017-02-15 | 江苏骏龙光电科技股份有限公司 | Temperature control device of laser at continuous measurement |
CN107967009A (en) * | 2018-01-05 | 2018-04-27 | 北京是卓科技有限公司 | A kind of laser that can be temperature automatically controlled |
CN109161477A (en) * | 2018-08-30 | 2019-01-08 | 北京龙基高科生物科技有限公司 | A kind of temperature-control circuit and its application based on gene sequencing |
CN112731985A (en) * | 2020-12-24 | 2021-04-30 | 中国工程物理研究院核物理与化学研究所 | Dustproof and moistureproof device for regulating and controlling environment temperature of precision instrument with high precision |
CN112731985B (en) * | 2020-12-24 | 2022-06-07 | 中国工程物理研究院核物理与化学研究所 | Dustproof and moistureproof device for regulating and controlling environment temperature of precision instrument with high precision |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151125 Termination date: 20160626 |