CN104434047A - Novel interlaced bidirectional constant-voltage low-power-consumption temperature measurement system - Google Patents
Novel interlaced bidirectional constant-voltage low-power-consumption temperature measurement system Download PDFInfo
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- A61B5/01—Measuring temperature of body parts ; Diagnostic temperature sensing, e.g. for malignant or inflamed tissue
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Abstract
The invention discloses a novel interlaced bidirectional constant-voltage low-power-consumption temperature measurement system which is mainly composed of a temperature acquisition circuit, a signal conversion circuit and a differential amplifier circuit. The novel interlaced bidirectional constant-voltage low-power-consumption temperature measurement system is characterized in that an interlaced bidirectional control circuit, a constant-current constant-voltage control circuit and a beam excitation type logic amplifying circuit are further connected to the output end of the temperature acquisition circuit and the output end of the signal conversion circuit in series, wherein the constant-current constant-voltage control circuit is connected with the output end of the interlaced bidirectional control circuit, and the beam excitation type logic amplifying circuit is connected with the interlaced bidirectional control circuit and the constant-current constant-voltage control circuit. According to the novel interlaced bidirectional constant-voltage low-power-consumption temperature measurement system, the constant-current constant-voltage control circuit is additionally arranged, so the stability of the working current and the working voltage of the system in the using process can be ensured, and the accuracy and stability of measured data can be improved remarkably.
Description
Technical field
The present invention relates to a kind of electronic measuring instrument, specifically refer to a kind of novel staggered bi-directional constant pressure type low-power consumption temp measuring system.
Background technology
At present, the measurement of bldy temperature instrument on market mainly contains two kinds, and a kind of is traditional mercurial thermometer, and another kind is electronic clinical thermometer.Although traditional mercurial thermometer Applicative time is longer, it exists measures the defects such as inconvenient, frangible, Measuring Time is longer, is not easy to long-time continuous temperature monitoring.Though and electronic clinical thermometer is convenient to detect, one of its core requirement will have low power capabilities exactly, to make product practical.In order to realize low-power consumption, just requiring that electronic clinical thermometer will enter low power consumpting state in non-measured state, entering the higher measuring state of power consumption when there being measurement demand again.Whether have measurement demand for detecting, traditional method is all that when button is not pressed, body temperature counts low power consumpting state, when button is pressed, then can wake electronic clinical thermometer up and enter measuring state for electronic clinical thermometer increases button.A part of power consumption can be reduced in this way although adopt, but because human body inherently exists electrostatic, therefore when this kind of electronic clinical thermometer touches human body skin, just the operating current of electronic clinical thermometer and voltage can be made to fluctuate, and then data can be caused often to change, the reference data that user one is comparatively constant can not be given to.
Summary of the invention
The object of the invention is to overcome the defect that complex structure existing for current electronic clinical thermometer and operating current and voltage can occur to fluctuate, a kind of novel staggered bi-directional constant pressure type low-power consumption temp measuring system is provided.
Object of the present invention is achieved through the following technical solutions: a kind of novel staggered bi-directional constant pressure type low-power consumption temp measuring system, forms primarily of temperature collection circuit, signaling conversion circuit and differential amplifier circuit.Simultaneously, staggered bi-directional control circuit is also serially connected with at the outfan of temperature collection circuit and signaling conversion circuit, the constant-current and constant-voltage control circuit be connected with staggered bi-directional control circuit outfan, and the beam excitation formula logic amplifying circuit be connected with constant-current and constant-voltage control circuit with staggered bi-directional control circuit; The input of described differential amplifier circuit is connected with the outfan of this constant-current and constant-voltage control circuit; Described staggered bi-directional control circuit is by control chip UCC, the field effect transistor MOS1 that grid is connected with the GDA pin of control chip UCC, the field effect transistor MOS2 that grid is connected with the GDB pin of control chip UCC, the diode D1 that P pole is connected with the drain electrode of field effect transistor MOS1, its N pole is connected with the source electrode of field effect transistor MOS1 after electric capacity C5, and the diode D2 that P pole is connected with the source electrode of field effect transistor MOS2, N pole is connected with the drain electrode of field effect transistor MOS2 after electric capacity C6 forms; The outfan of described temperature collection circuit is connected with the drain electrode of field effect transistor MOS1, the outfan of signaling conversion circuit is connected with the source electrode of field effect transistor MOS2, and the input of constant-current and constant-voltage control circuit is then connected with the N pole of diode D2 with the N pole of diode D1 respectively.
Described beam excitation formula logic amplifying circuit is primarily of power amplifier P1, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P1, the polar capacitor C7 of positive pole ground connection after optical diode D3, one end is connected with the positive pole of polar capacitor C7, the resistance R11 of other end ground connection after diode D4, positive pole is connected with the junction point of diode D4 with resistance R11, the polar capacitor C9 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R12 that the other end is connected with the electrode input end of power amplifier P, be serially connected in the resistance R13 between the negative input of power amplifier P1 and outfan, one end is connected with the outfan of NAND gate IC1, the resistance R14 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the outfan of NAND gate IC2, the electric capacity C8 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C9, the resistance R15 that the other end is connected with the negative input of NAND gate IC2 forms, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P1, and its outfan is connected with the electrode input end of NAND gate IC2, the electrode input end of NAND gate IC3 is connected with the outfan of power amplifier P1, and its outfan is then connected with the outfan of differential amplifier circuit, the electrode input end of power amplifier P1 is also connected with the source electrode of field effect transistor MOS2.
Described constant-current and constant-voltage control circuit by audion Q1, audion Q2, controlled thyristor D, slide rheostat W1, slide rheostat W2, resistance R10, and the resistance R9 be serially connected between the colelctor electrode of audion Q1 and base stage forms; The N pole of described controlled thyristor D is connected with the base stage of audion Q1, and its P pole is connected with the emitter stage of audion Q1 after slide rheostat W2, and it controls pole and is then connected with the sliding end of slide rheostat W2; The emitter stage of audion Q2 is connected with the emitter stage of audion Q1, and its base stage is connected with the P pole of controlled thyristor D after resistance R10 through slide rheostat W1 in turn; The N pole of described diode D1 is then connected with the colelctor electrode of audion Q1, and the source electrode of described field effect transistor MOS1 is connected with the base stage of audion Q1, and the N pole of described diode D2 is then connected with the P pole of controlled thyristor D; The input of differential amplifier circuit is then connected with the P pole of controlled thyristor D with the colelctor electrode of audion Q2 respectively.
Described temperature collection circuit is made up of resistance R1, resistance R2, resistance R4, electric capacity C2 and voltage follower U3; The external DC voltage VCC in one end of described resistance R1, its other end is ground connection after resistance R4; Electric capacity C2 and resistance R4 is in parallel; The negative pole of voltage follower U3 is connected with the junction point of resistance R1 with resistance R4, and its outfan is then connected with the drain electrode of field effect transistor MOS1 after resistance R2.
Described signaling conversion circuit is by temperature sensor R8, the divider resistance R5 be in series with this temperature sensor R8, the electric capacity C1 be in parallel with temperature sensor R8, and positive pole and the temperature sensor R8 voltage follower U1 that outfan is then connected with the source electrode of field effect transistor MOS2 after resistance R3 that is connected with the junction point of divider resistance R5 forms.
Described differential amplifier circuit is by difference amplifier U2, one end is connected with the negative pole of difference amplifier U2, the resistance R6 of other end ground connection, the electric capacity C3 be in parallel with resistance R6, the resistance R7 that one end is connected with the positive pole of difference amplifier U2, the other end is connected with the outfan of difference amplifier U2, and form with the electric capacity C4 that resistance R7 is in parallel; The colelctor electrode of described audion Q2 is connected with the negative pole of difference amplifier U2, and the P pole of controlled thyristor D is then connected with the positive pole of difference amplifier U2; The outfan of described NAND gate IC3 is then connected with difference amplifier U2 outfan.
The present invention comparatively prior art compares and has the following advantages and beneficial effect:
(1) overall structure of the present invention is very simple, when not increasing electronic thermometer structure complicated process and waterproof difficulty, can realize the low power capabilities of clinical thermometer.
(2) invention increases constant-current and constant-voltage control circuit, when therefore can guarantee to use, its operating current and voltage is stable, can improve the Stability and veracity of measurement data significantly.
(3) because the present invention is also provided with staggered bi-directional control circuit, the energy consumption of system can also therefore be reduced significantly.
Accompanying drawing explanation
Fig. 1 is integrated circuit structural representation of the present invention.
Detailed description of the invention
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the present invention mainly includes temperature collection circuit, signaling conversion circuit, difference amplifier, staggered bi-directional control circuit, constant-current and constant-voltage control circuit and this six part of beam excitation formula logic amplifying circuit.Wherein, temperature collection circuit is used for the collection of human body temperature signal, and it is made up of resistance R1, resistance R2, resistance R4, electric capacity C2 and voltage follower U3.During connection, the external DC voltage VCC in one end of resistance R1, its other end is ground connection after resistance R4.And electric capacity C2 and resistance R4 is in parallel; The negative pole of voltage follower U3 is connected with the junction point of resistance R1 with resistance R4, and its outfan is then connected with staggered bi-directional control circuit input after resistance R2.For guaranteeing that voltage follower U3 can normally use, the voltage first of this external DC voltage VCC is+6V, and the positive pole of voltage follower U3 will be connected with its outfan.
The temperature signal that signaling conversion circuit is used for temperature collection circuit to collect converts voltage signal to, and it is made up of divider resistance R5, temperature sensor R8, electric capacity C1, resistance R3 and voltage follower U1.During connection, the DC voltage VCC of one end of divider resistance R5 external+6V too, electric capacity C1 is then in parallel with temperature sensor R8.
The positive pole of voltage follower U1 and the temperature sensor R8 outfan that is connected with the junction point of divider resistance R5 is then connected with another input of staggered bi-directional control circuit after resistance R3.Meanwhile, the negative pole of voltage follower U1 is connected with the outfan of voltage follower U1.
Described staggered bi-directional control circuit is made up of control chip UCC, field effect transistor MOS1, field effect transistor MOS2, diode D1, diode D2 and electric capacity C5 and electric capacity C6.For guaranteeing result of use, this control chip UCC preferentially adopts 28060 types to realize.During connection, the grid of field effect transistor MOS1 is connected with the GDA pin of control chip UCC, and the P pole of diode D1 is connected with the drain electrode of field effect transistor MOS1, and its N pole is connected with the source electrode of field effect transistor MOS1 after electric capacity C5.
The grid of field effect transistor MOS2 is connected with the GDB pin of control chip UCC, and the P pole of diode D2 is connected with the source electrode of field effect transistor MOS2, and its N pole is connected with the drain electrode of field effect transistor MOS2 after electric capacity C6.The described outfan of voltage follower U3 is connected with the drain electrode of field effect transistor MOS1, and the outfan of voltage follower U1 is connected with the source electrode of field effect transistor MOS2.
Described constant-current and constant-voltage control circuit by audion Q1, audion Q2, controlled thyristor D, slide rheostat W1, slide rheostat W2, resistance R10, and the resistance R9 be serially connected between the colelctor electrode of audion Q1 and base stage forms.During connection, the N pole of controlled thyristor D is connected with the base stage of audion Q1, and its P pole is connected with the emitter stage of audion Q1 after slide rheostat W2, and it controls pole and is then connected with the sliding end of slide rheostat W2.The emitter stage of audion Q2 is connected with the emitter stage of audion Q1, and its base stage is connected with the P pole of controlled thyristor D after resistance R10 through slide rheostat W1 in turn.
The source electrode of field effect transistor MOS1 is connected with the base stage of audion Q1, and the N pole of diode D2 is then connected with the P pole of controlled thyristor D.For guaranteeing result of use, this controlled thyristor D can adopt TL431 to substitute.Consider that TL431 is controllable accurate source of stable pressure, its output voltage just can be set to from Verf(2.5V with two resistance arbitrarily) to any value within the scope of 36V.Therefore, when adopting TL431, the loss of native system can farthest be reduced.
Differential amplifier circuit is by difference amplifier U2, one end is connected with the negative pole of difference amplifier U2, the resistance R6 of other end ground connection, the electric capacity C3 be in parallel with resistance R6, the resistance R7 that one end is connected with the positive pole of difference amplifier U2, the other end is connected with the outfan of difference amplifier U2, and form with the electric capacity C4 that resistance R7 is in parallel.
Wherein, the colelctor electrode of audion Q2 will be connected with the negative pole of difference amplifier U2, and the P pole of controlled thyristor D is then connected with the positive pole of difference amplifier U2.
Described beam excitation formula logic amplifying circuit is primarily of power amplifier P1, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P1, the polar capacitor C7 of positive pole ground connection after optical diode D3, one end is connected with the positive pole of polar capacitor C7, the resistance R11 of other end ground connection after diode D4, positive pole is connected with the junction point of diode D4 with resistance R11, the polar capacitor C9 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R12 that the other end is connected with the electrode input end of power amplifier P, be serially connected in the resistance R13 between the negative input of power amplifier P1 and outfan, one end is connected with the outfan of NAND gate IC1, the resistance R14 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the outfan of NAND gate IC2, the electric capacity C8 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C9, the resistance R15 that the other end is connected with the negative input of NAND gate IC2 forms.
Meanwhile, the electrode input end of this NAND gate IC1 is connected with the negative input of power amplifier P1, and its outfan is connected with the electrode input end of NAND gate IC2; The electrode input end of NAND gate IC3 is connected with the outfan of power amplifier P1, and its outfan is then connected with the outfan of difference amplifier U2.The electrode input end of described power amplifier P1 is then connected with the source electrode of field effect transistor MOS2.
As mentioned above, just the present invention can well be realized.
Claims (5)
1. a novel staggered bi-directional constant pressure type low-power consumption temp measuring system, form primarily of temperature collection circuit, signaling conversion circuit and differential amplifier circuit, it is characterized in that, staggered bi-directional control circuit is also serially connected with at the outfan of temperature collection circuit and signaling conversion circuit, the constant-current and constant-voltage control circuit be connected with staggered bi-directional control circuit outfan, and the beam excitation formula logic amplifying circuit be connected with constant-current and constant-voltage control circuit with staggered bi-directional control circuit; The input of described differential amplifier circuit is connected with the outfan of this constant-current and constant-voltage control circuit; Described staggered bi-directional control circuit is by control chip UCC, the field effect transistor MOS1 that grid is connected with the GDA pin of control chip UCC, the field effect transistor MOS2 that grid is connected with the GDB pin of control chip UCC, the diode D1 that P pole is connected with the drain electrode of field effect transistor MOS1, its N pole is connected with the source electrode of field effect transistor MOS1 after electric capacity C5, and the diode D2 that P pole is connected with the source electrode of field effect transistor MOS2, N pole is connected with the drain electrode of field effect transistor MOS2 after electric capacity C6 forms; The outfan of described temperature collection circuit is connected with the drain electrode of field effect transistor MOS1, the outfan of signaling conversion circuit is connected with the source electrode of field effect transistor MOS2, and the input of constant-current and constant-voltage control circuit is then connected with the N pole of diode D2 with the N pole of diode D1 respectively;
Described beam excitation formula logic amplifying circuit is primarily of power amplifier P1, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P1, the polar capacitor C7 of positive pole ground connection after optical diode D3, one end is connected with the positive pole of polar capacitor C7, the resistance R11 of other end ground connection after diode D4, positive pole is connected with the junction point of diode D4 with resistance R11, the polar capacitor C9 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R12 that the other end is connected with the electrode input end of power amplifier P, be serially connected in the resistance R13 between the negative input of power amplifier P1 and outfan, one end is connected with the outfan of NAND gate IC1, the resistance R14 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the outfan of NAND gate IC2, the electric capacity C8 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C9, the resistance R15 that the other end is connected with the negative input of NAND gate IC2 forms, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P1, and its outfan is connected with the electrode input end of NAND gate IC2, the electrode input end of NAND gate IC3 is connected with the outfan of power amplifier P1, and its outfan is then connected with the outfan of differential amplifier circuit, the electrode input end of power amplifier P1 is also connected with the source electrode of field effect transistor MOS2.
2. one according to claim 1 novel staggered bi-directional constant pressure type low-power consumption temp measuring system, it is characterized in that, described constant-current and constant-voltage control circuit is by audion Q1, audion Q2, controlled thyristor D, slide rheostat W1, slide rheostat W2, resistance R10, and the resistance R9 be serially connected between the colelctor electrode of audion Q1 and base stage forms; The N pole of described controlled thyristor D is connected with the base stage of audion Q1, and its P pole is connected with the emitter stage of audion Q1 after slide rheostat W2, and it controls pole and is then connected with the sliding end of slide rheostat W2; The emitter stage of audion Q2 is connected with the emitter stage of audion Q1, and its base stage is connected with the P pole of controlled thyristor D after resistance R10 through slide rheostat W1 in turn; The N pole of described diode D1 is then connected with the colelctor electrode of audion Q1, and the source electrode of described field effect transistor MOS1 is connected with the base stage of audion Q1, and the N pole of described diode D2 is then connected with the P pole of controlled thyristor D; The input of differential amplifier circuit is then connected with the P pole of controlled thyristor D with the colelctor electrode of audion Q2 respectively.
3. one according to claim 2 novel staggered bi-directional constant pressure type low-power consumption temp measuring system, is characterized in that, described temperature collection circuit is made up of resistance R1, resistance R2, resistance R4, electric capacity C2 and voltage follower U3; The external DC voltage VCC in one end of described resistance R1, its other end is ground connection after resistance R4; Electric capacity C2 and resistance R4 is in parallel; The negative pole of voltage follower U3 is connected with the junction point of resistance R1 with resistance R4, and its outfan is then connected with the drain electrode of field effect transistor MOS1 after resistance R2.
4. one according to claim 2 novel staggered bi-directional constant pressure type low-power consumption temp measuring system, it is characterized in that, described signaling conversion circuit is by temperature sensor R8, the divider resistance R5 be in series with this temperature sensor R8, the electric capacity C1 be in parallel with temperature sensor R8, and positive pole and the temperature sensor R8 voltage follower U1 that outfan is then connected with the source electrode of field effect transistor MOS2 after resistance R3 that is connected with the junction point of divider resistance R5 forms.
5. one according to claim 2 novel staggered bi-directional constant pressure type low-power consumption temp measuring system, it is characterized in that, described differential amplifier circuit is by difference amplifier U2, one end is connected with the negative pole of difference amplifier U2, the resistance R6 of other end ground connection, the electric capacity C3 be in parallel with resistance R6, the resistance R7 that one end is connected with the positive pole of difference amplifier U2, the other end is connected with the outfan of difference amplifier U2, and form with the electric capacity C4 that resistance R7 is in parallel; The colelctor electrode of described audion Q2 is connected with the negative pole of difference amplifier U2, and the P pole of controlled thyristor D is then connected with the positive pole of difference amplifier U2; The outfan of described NAND gate IC3 is then connected with difference amplifier U2 outfan.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410687506.4A CN104434047A (en) | 2014-11-25 | 2014-11-25 | Novel interlaced bidirectional constant-voltage low-power-consumption temperature measurement system |
| CN201510317347.3A CN104997490A (en) | 2014-11-25 | 2015-06-11 | Novel amplification type field intensity detection low-power temperature measurement system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410687506.4A CN104434047A (en) | 2014-11-25 | 2014-11-25 | Novel interlaced bidirectional constant-voltage low-power-consumption temperature measurement system |
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| CN104434047A true CN104434047A (en) | 2015-03-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410687506.4A Pending CN104434047A (en) | 2014-11-25 | 2014-11-25 | Novel interlaced bidirectional constant-voltage low-power-consumption temperature measurement system |
| CN201510317347.3A Withdrawn CN104997490A (en) | 2014-11-25 | 2015-06-11 | Novel amplification type field intensity detection low-power temperature measurement system |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510317347.3A Withdrawn CN104997490A (en) | 2014-11-25 | 2015-06-11 | Novel amplification type field intensity detection low-power temperature measurement system |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106406386B (en) * | 2016-12-26 | 2018-09-11 | 武汉博激世纪科技有限公司 | A kind of two-way TEC automatic, high precisions temperature-control circuit |
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2014
- 2014-11-25 CN CN201410687506.4A patent/CN104434047A/en active Pending
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- 2015-06-11 CN CN201510317347.3A patent/CN104997490A/en not_active Withdrawn
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| CN104997490A (en) | 2015-10-28 |
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Application publication date: 20150325 |