CN103490269A - Temperature control circuit based on thermoelectric refrigerator - Google Patents
Temperature control circuit based on thermoelectric refrigerator Download PDFInfo
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- CN103490269A CN103490269A CN201310434874.3A CN201310434874A CN103490269A CN 103490269 A CN103490269 A CN 103490269A CN 201310434874 A CN201310434874 A CN 201310434874A CN 103490269 A CN103490269 A CN 103490269A
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Abstract
The invention discloses a temperature control circuit based on a thermoelectric refrigerator. The control circuit comprises a TEC component, a thermistor, a TEC control unit, an MCU and a differential proportion circuit, wherein the thermistor is arranged on the surface of the TEC component and connected with the differential proportion circuit, the TEC control unit converts a TEC temperature adjusting signal from the MCU into a voltage signal for controlling the current flow direction, the TEC component absorbs heat or gives out heat according to the voltage signal from the TEC control unit, the differential proportion circuit performs differential amplification on the difference value between a collected thermistor voltage and a preset reference voltage, and a differential voltage is obtained. The MCU obtains sampling temperature of the current thermistor according to the differential voltage from the differential proportion circuit, and the TEC temperature adjusting signal is generated according to a comparison result between the sampling temperature of the thermistor and the preset target temperature. By applying the temperature control circuit based on the thermoelectric refrigerator, the cost of the temperature control circuit can be lowered, and the ADC use ratio can be improved.
Description
Technical field
The present invention relates to the optical communication technique field, relate in particular to a kind of temperature-control circuit based on thermoelectric refrigerating unit.
Background technology
Along with people constantly increase the demand of high bandwidth, at optical communication field, require the transmission rate of optical module more and more higher, volume is but more and more less.EML(Electro-absorption Modulated Laser in optical module, electric absorption externally modulated laser) there are preferably spectral characteristic, fast response time, the characteristics such as low in energy consumption, therefore be widely used in optical communication.
Because the centre wavelength of EML laser, power output etc. all are subject to the impact of laser temperature, therefore to keep centre wavelength, power output stable of EML laser, need to be controlled the temperature of EML laser.Particularly for DWDM(Dense Wavelength Division Multiplexing, intensive multiplexed optical wave with) scene of application, maximum 100G and the 50G channel spacing in application, require its standard wave length interval to be respectively 0.8nm and 0.4nm.In order to guarantee channel spacing, the centre wavelength stability requirement that system manufacturers proposes 100G and 50G is generally positive and negative 20pm and positive and negative 10pm.This stability requirement is strict, and therefore, needs the temperature of the strict EML of control laser.
In practical application, generally use TEC(Thermoelectric cooler, thermoelectric refrigerating unit claims again semiconductor cooler) temperature-control circuit guarantees the constant of EML laser works temperature.Existing TEC temperature-controlled process, generally by MCU(Micro Control Unit, micro-control unit) the ADC(Analog-Digital Converter in, analog to digital converter) build sample circuit, sample circuit is by the reference voltage power supply set in advance, ADC is arranged on the magnitude of voltage of the thermistor in the EML laser according to the sampling period sampling set in advance, in conjunction with pre-stored thermistor resistance and the mapping relations of thermistor voltage value, obtain the current resistance value of thermistor, again according to the temperature-resistance characteristic relation of this pre-stored thermistor, obtain thermistor temp corresponding to current resistance value, predefined target temperature in the thermistor temp that obtains and MCU is compared, difference according to the thermistor temp obtained and target temperature, generate the temperature closed loop control signal: when the thermistor temp obtained higher than target temperature, send the temperature closed loop control signal that comprises the cooling of EML laser to the TEC element, make the heat absorption of TEC element, thereby reduce the temperature of EML laser and thermistor, , send and comprise the temperature closed loop control signal that the EML laser heats up to the TEC element lower than target temperature when the thermistor temp obtained, make the TEC unit heat discharging, thus the temperature of rising EML laser and thermistor, when the thermistor temp obtained equals target temperature, maintain TEC element current state constant.Like this, by closed-loop control TEC element, heat up to the EML laser or cooling, can ensure the stability of EML laser temperature, and then guarantee centre wavelength, power output etc. stable of EML laser.
In the situation that the reference voltage of sample circuit is definite, in theory, the thermistor voltage scope of ADC sampling is that 0V is between reference voltage.But, in practical engineering application, temperature during due to the EML laser works is generally in a scope interval, routine is applied between 20 ℃ to 70 ℃, according to the temperature-resistance characteristic relation of thermistor, when the temperature of thermistor is 20 ℃, corresponding thermistor resistance value is about several thousand (K) ohm, and, when the temperature of thermistor is 70 ℃, corresponding thermistor resistance value can reach tens K.Thereby, in conventional applied environment, because thermistor resistance value minimum is also the K level, like this, the minimum thermistor voltage that causes ADC to sample can be much larger than 0V, that is, and and in conventional applied environment, the thermistor voltage scope that ADC samples is the part of the ADC thermistor voltage scope of sampling in theory, and the thermistor voltage scope that makes ADC sample in theory is not by 100% utilization.Like this, owing to need to characterizing with less voltage range temperature corresponding to conventional applied environment, reduced the actual samples precision of ADC, thereby made the lasting accuracy of laser temperature poor.
Have now in order to improve the lasting accuracy of laser temperature, often need to promote the analog-to-digital conversion figure place of ADC, like this, will cause the increase of hardware designs and production cost; Simultaneously, improve the lasting accuracy of laser temperature by the analog-to-digital conversion figure place that promotes ADC, the thermistor voltage scope that exists equally ADC to sample in theory, not by the situation of 100% utilization, makes the utilance of ADC lower.
Summary of the invention
Embodiments of the invention provide a kind of temperature-control circuit based on thermoelectric refrigerating unit, reduce the utilance of temperature-control circuit cost, lifting ADC.
For achieving the above object, a kind of temperature-control circuit based on thermoelectric refrigerating unit that the embodiment of the present invention provides comprises: thermoelectric refrigerating unit TEC element, thermistor and TEC control unit, it is characterized in that, also comprise: micro-control unit MCU and differential ratio circuit, wherein
Described thermistor is arranged at the surface of described TEC element, with described differential ratio circuit, is connected;
Described differential ratio circuit, for gathering the voltage of described thermistor, carry out differential amplification by the difference between the thermistor voltage of collection and preset reference voltage, obtains differential voltage;
Described MCU, for receiving the differential voltage from described differential ratio circuit, and, according to pre-stored thermistor voltage and the mapping relations of differential voltage, obtain and the corresponding thermistor voltage of the differential voltage received; According to the thermistor voltage obtained, in conjunction with pre-stored thermistor resistance and the mapping relations of thermistor voltage, obtain and the corresponding thermistor resistance value of the thermistor voltage obtained; According to the temperature-resistance characteristic of thermistor, obtain the sample temperature of the current thermistor corresponding with the thermistor resistance value of obtaining again; The sample temperature of thermistor and predefined target temperature are compared, according to comparative result, produce TEC adjustment signal, export to the TEC control unit;
Described TEC control unit, be converted to for the TEC adjustment signal that will receive from described MCU the voltage signal of controlling current direction;
Described TEC element, the voltage signal for according to from described TEC control unit, carry out neither endothermic nor exothermic.
Preferably, described differential ratio circuit comprises: operational amplifier, the first resistance, the second resistance, the 3rd resistance, the 4th resistance, the 5th resistance, the 6th resistance, the 7th resistance, the first electric capacity, the second electric capacity; Wherein,
The in-phase input end of described operational amplifier is connected with an end of described the 4th resistance, an end of described the 5th resistance respectively, the other end ground connection of described the 5th resistance, the other end of described the 4th resistance is connected with an end of an end of described the first resistance, described the first electric capacity and an end of described thermistor respectively;
Apply constant voltage at the other end of described the first resistance and an end of described the second resistance simultaneously; The other end of described the first electric capacity and the equal ground connection of the other end of described thermistor;
The inverting input of described operational amplifier is connected with an end of described the 6th resistance, an end of described the 7th resistance respectively, wherein, the other end of described the 7th resistance is connected with the output of described operational amplifier, the other end of described the 6th resistance is connected with the other end of described the second resistance, an end of described the 3rd resistance, the other end ground connection of described the 3rd resistance;
Apply constant voltage at the other end of described the first resistance and the other end of described the second resistance simultaneously; The equal ground connection of the other end of the other end of described the first electric capacity and described the 3rd resistance;
The output of described operational amplifier is connected with the input of described MCU;
Preferably, described differential ratio circuit further comprises:
The second electric capacity, an end of the second electric capacity is connected with the output of described operational amplifier, other end ground connection.
Preferably, the ratio of described the 4th resistance and described the 5th resistance equals the ratio of described the 6th resistance and described the 7th resistance.
Preferably, the resistance of described the 4th resistance equates with the resistance of the 6th resistance, and the resistance of described the 5th resistance equates with the resistance of the 7th resistance.
Preferably, described constant voltage is carried out dividing potential drop by described the second resistance, described the 3rd resistance, and the 3rd node place between described the second resistance and described the 3rd resistance forms described preset reference voltage.
Preferably, described the second electric capacity, for destroying the self-oscillation condition of described Voltage Feedback network, keeps the steady operation of described differential ratio circuit.
Preferably, describedly produce TEC adjustment signal according to comparative result and be specially:
When the sample temperature of described thermistor, higher than target temperature, described MCU produces the TEC adjustment signal meaned with positive level that makes the heat absorption of TEC element;
When the sample temperature of described thermistor, lower than target temperature, described MCU produces the TEC adjustment signal meaned with negative level that makes the TEC unit heat discharging;
When the sample temperature of described thermistor equals target temperature, described MCU produces and makes the TEC element maintain the TEC adjustment signal meaned with zero level of current state.
Preferably, the described TEC adjustment signal that will receive from described MCU is converted to the voltage signal of controlling current direction, is specially:
When the TEC adjustment signal received means with positive level, the forward bias voltage signal that the current direction that described TEC control unit is controlled the TEC element to described TEC element output is forward;
When the TEC adjustment signal received means with negative level, the negative sense biasing voltage signal that the current direction that described TEC control unit is controlled the TEC element to described TEC element output is negative sense;
When the TEC adjustment signal received means with zero level, described TEC control unit maintains the stability maintenance voltage signal of the current current direction of TEC element to described TEC element output.
Preferably, described basis, from the voltage signal of described TEC control unit, is carried out neither endothermic nor exothermic, is specially:
When the voltage signal from described TEC control unit is the forward bias voltage signal, the current direction of described TEC element is forward, is absorbed heat, and described thermistor is freezed, and reduces the temperature of described thermistor;
When the voltage signal from described TEC control unit is the reverse bias voltage signal, the current direction of described TEC element is oppositely, carries out heat release, described thermistor is heated to the temperature of the described thermistor that raises;
When the voltage signal from described TEC control unit is the stability maintenance voltage signal, described TEC element maintains current current direction.
As seen from the above technical solution, a kind of temperature-control circuit based on thermoelectric refrigerating unit that the embodiment of the present invention provides, lower limit temperature while considering EML laser works in conventional applied environment, obtain in advance under this lower limit temperature, the thermistor voltage that ADC gathers, by increasing a differential ratio circuit, the thermistor voltage value of differential ratio circuit collection and preset reference voltage are carried out to difference processing, make the thermistor voltage excursion of difference processing can be amplified to the whole voltage sample of ADC interval, ADC voltage sample interval 100% is utilized, thereby improve the sampling precision of ADC, promote the utilance of ADC.Simultaneously, the structural change that the differential ratio circuit of increase causes with respect to the analog-to-digital conversion figure place that promotes ADC, design and production cost can be ignored comparatively speaking, thereby effectively reduce the temperature-control circuit cost.
The accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below will the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described.Apparently, the accompanying drawing in below describing is only some embodiments of the present invention, for those of ordinary skills, can also obtain according to these accompanying drawing illustrated embodiments other embodiment and accompanying drawing thereof.
Fig. 1 is the temperature-control circuit structural representation of the embodiment of the present invention based on thermoelectric refrigerating unit.
Fig. 2 is the differential ratio circuit schematic diagram of the embodiment of the present invention.
Embodiment
Below with reference to accompanying drawing, the technical scheme of various embodiments of the present invention is carried out to clear, complete description, obviously, described embodiment is only a part of embodiment of the present invention, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills are resulting all other embodiment under the prerequisite of not making creative work, all belong to the scope that the present invention protects.
Existing TEC temperature-controlled process, can not the 100% thermistor voltage scope of utilizing ADC to sample in theory, like this, has reduced the actual samples precision of ADC, makes the lasting accuracy of laser temperature poor.In order to improve the lasting accuracy of laser temperature, often need the analog-to-digital conversion figure place that promotes ADC to improve sampling precision, but can cause increase and the waste of design cost.
The present invention is based on the deficiency of existing TEC temperature-controlled process, lower limit temperature while considering EML laser works in conventional applied environment, obtain in advance under this lower limit temperature, the thermistor voltage that ADC gathers, by increasing a differential ratio circuit, the thermistor voltage value of differential ratio circuit collection and preset reference voltage are carried out to difference processing, make the thermistor voltage excursion of difference processing can be amplified to the whole voltage sample of ADC interval, ADC voltage sample interval 100% is utilized, thereby improve the sampling precision of ADC, promote the utilance of ADC.Simultaneously, the structural change that the differential ratio circuit of increase causes with respect to the analog-to-digital conversion figure place that promotes ADC, design and production cost can be ignored comparatively speaking, thereby effectively reduce the temperature-control circuit cost.
Fig. 1 is the temperature-control circuit structural representation of the embodiment of the present invention based on thermoelectric refrigerating unit.The thermoelectric refrigerating unit temperature-control circuit comprises: thermoelectric refrigerating unit TEC element 10, thermistor 20, micro-control unit MCU30, TEC control unit 40 and differential ratio circuit 50; Wherein,
In the embodiment of the present invention, preset reference voltage can be in conventional applied environment, under the condition identical with temperature control parameter, and the magnitude of voltage on the corresponding thermistor gathered of the lower limit temperature during EML laser works.Certainly, in practical application, preset reference voltage can be also in conventional applied environment, under the condition identical with temperature control parameter, and the magnitude of voltage on the corresponding thermistor gathered of the ceiling temperature during EML laser works.Like this, the differential voltage obtained through differential amplification can go to zero, thereby can cover whole voltage sample interval, makes the voltage sample interval can be by 100% utilization.
MCU30, for receiving the differential voltage of Self-differential ratio circuit 50, and, according to pre-stored thermistor voltage and the mapping relations of differential voltage, obtain and the corresponding thermistor voltage of the differential voltage received; According to the thermistor voltage obtained, in conjunction with pre-stored thermistor resistance and the mapping relations of thermistor voltage, obtain and the corresponding thermistor resistance value of the thermistor voltage obtained; According to the temperature-resistance characteristic of thermistor, obtain the sample temperature of the current thermistor corresponding with the thermistor resistance value of obtaining again; The sample temperature of thermistor and predefined target temperature being compared, produce TEC adjustment signal according to comparative result, by DAC(Digital-Analog Converter, digital to analog converter) passage is to 40 outputs of TEC control unit;
In the embodiment of the present invention, if TEC adjustment signal with positive level, mean, the current direction of mean to need controlling TEC element 10 is forward, so that TEC element 10 produces heat absorption, the EML laser is freezed; If TEC adjustment signal means with negative level, mean that needing the current direction of control TEC element 10 is oppositely, so that TEC element 10 produces heat releases, is heated the EML laser; If TEC adjustment signal means with zero level, mean to maintain the current current direction of TEC element 10 constant.
In the embodiment of the present invention, MCU30 can be single-chip microcomputer, microprocessor, CPU, FPGA etc.
In the embodiment of the present invention, TEC element and TEC control unit all adopt existing TEC temperature-control circuit structure commonly used to get final product, and the circuit be well known to those skilled in the art repeats no more herein.
Fig. 2 is the differential ratio circuit schematic diagram of the embodiment of the present invention.As shown in Figure 2, differential ratio circuit 50 comprises: operational amplifier Q
1, the first resistance R
1, the second resistance R
2, the 3rd resistance R
3, the 4th resistance R
4, the 5th resistance R
5, the 6th resistance R
6, the 7th resistance R
7, the first capacitor C
1, the second capacitor C
2.
Operational amplifier Q
1in-phase input end "+" respectively with the 4th resistance R
4an end, the 5th resistance R
5an end be connected, wherein, the 5th resistance R
5other end ground connection, the 4th resistance R
4the other end respectively with the first resistance R
1an end, the first capacitor C
1an end and an end of thermistor 20 be connected.
Operational amplifier Q
1inverting input "-" respectively with the 6th resistance R
6an end, the 7th resistance R
7an end be connected, wherein, the 7th resistance R
7the other end and operational amplifier Q
1output " OUT " be connected, the 6th resistance R
6the other end respectively with the second resistance R
2an end, the 3rd resistance R
3an end be connected, the 3rd resistance R
3other end ground connection.
In the first resistance R
1the other end and the second resistance R
2the other end apply constant voltage V simultaneously
rEF; The first capacitor C
1the other end and the equal ground connection of the other end of thermistor 20;
Operational amplifier Q
1output " OUT " respectively with the second capacitor C
2the input of an end, MCU30 be connected; The second capacitor C
2other end ground connection.
In the embodiment of the present invention, differential ratio circuit 50, by the first resistance R
1, the first capacitor C
1and constant voltage V
rEF, in the first resistance R
1and the first node place between the first electric capacity, the sampled voltage V of the thermistor 20 in the Real-time Obtaining laser assembly
i;
At thermistor sampled voltage V
iby the 4th resistance R
4and the 5th resistance R
5after carrying out dividing potential drop, the voltage at the second node place between the 4th resistance and the 5th resistance is input to operational amplifier Q
1in-phase input end "+";
Constant voltage V
rEFby the second resistance R
1, the 3rd resistance R
2after carrying out dividing potential drop, the 3rd node place between the second resistance and the 3rd resistance forms preset reference voltage V
thers_ref, wherein, preset reference voltage V
thers_refcan be expressed as: V
thers_ref=R
3/ (R
2+ R
3) * V
rEF;
At preset reference voltage V
thers_refvia the 6th resistance R
6and the 7th resistance R
7after the Voltage Feedback network formed, the voltage at the 4th node place between the 6th resistance and the 7th resistance is input to operational amplifier Q
1inverting input "-".
Circuit supply voltage V
cCfor operational amplifier Q
1circuit voltage is provided; The second capacitor C
2for destroying by the 6th resistance R
6and the 7th resistance R
7the self-oscillation condition of the Voltage Feedback network formed, keep the steady operation of differential ratio circuit.
Replacedly, embodiments of the invention also can not comprise the second capacitor C
2.In this case, operational amplifier Q
1output with the input of MCU30, be connected.
In the embodiment of the present invention, about how utilizing the second capacitor C
2realize that the self-oscillation condition of disintegration voltage feedback network, for existing known technology, does not repeat them here.
In the embodiment of the present invention, thermistor sampled voltage V
iand preset reference voltage V
thers_refthrough operational amplifier Q
1difference processing, obtain differential voltage V
temp; According to the principle of differential ratio circuit, differential voltage V
tempcan be expressed as: V
temp=V
i* (R
5/ (R
4+ R
5) * ((R
6+ R
7)/R
6)-V
thers_ref* R
7/ R
6, by operational amplifier Q
1" OUT " output output;
In the embodiment of the present invention, the ratio of the 4th resistance and the 5th resistance equals the ratio of the 6th resistance and the 7th resistance, that is: R
4/ R
5=R
6/ R
7, for the ease of calculating, in practical application, make the 4th resistance R
4resistance and the 6th resistance R
6resistance equate, the 5th resistance R
5resistance and the 7th resistance R
7resistance equate, like this, differential voltage V
temp=R
7/ R
6* (V
i-V
thers_ref).
In the embodiment of the present invention, the ADC sampling channel of MCU30, from the operational amplifier Q of differential ratio circuit 50
1" OUT " output receive differential voltage, and according to pre-stored thermistor voltage and the mapping relations of differential voltage: V
temp=V
i* (R
5/ (R
4+ R
5) * ((R
6+ R
7)/R
6)-V
thers_ref* R
7/ R
6, obtain and the corresponding thermistor sampled voltage of differential voltage V
i; According to the thermistor sampled voltage V obtained
i, in conjunction with pre-stored thermistor resistance and the mapping relations of thermistor voltage, obtain and the thermistor sampled voltage V obtained
ithe corresponding current resistance value of thermistor; According to the temperature-resistance characteristic of thermistor, obtain the thermistor temp value corresponding with the current resistance value of the thermistor obtained, i.e. the sample temperature of temperature-sensitive resistance again; Sample temperature and the predefined target temperature of the thermistor that obtains are compared, according to the difference between the thermistor sample temperature obtained and target temperature, generate TEC adjustment signal;
In the embodiment of the present invention, when the sample temperature of the thermistor obtained, higher than target temperature, MCU30 produces the TEC adjustment signal meaned with positive level that makes 10 heat absorptions of TEC element; When the sample temperature of the thermistor obtained, lower than target temperature, MCU30 produces the TEC adjustment signal meaned with negative level that makes 10 heat releases of TEC element; When the sample temperature of the thermistor obtained equals target temperature, it is 0 change that MCU30 produces the TEC adjustment signal that zero level means of take that makes TEC element 10 maintain current state.
The TEC adjustment signal that TEC control unit 40 will receive from MCU30 is converted to the voltage signal of controlling current direction;
In the embodiment of the present invention, when the TEC adjustment signal received means with positive level, TEC control unit 40 controls to 10 outputs of TEC element the forward bias voltage signal that the current direction of TEC elements 10 is forward; When TEC adjustment signal means with negative level, TEC control unit 40 controls to TEC element 10 output the reverse bias voltage signal that the current direction of TEC elements 10 is negative sense; When TEC adjustment signal means with zero level, TEC control unit 40 maintains the stability maintenance voltage signal of the current current direction of TEC element to 10 outputs of TEC element.
In the embodiment of the present invention, when the voltage signal received is the forward bias voltage signal, the current direction of TEC element 10 is forward, is absorbed heat, and EML laser and thermistor 20 are freezed, and reduces the temperature of EML laser and thermistor 20; When the voltage signal received is reverse bias voltage, the current direction of TEC element 10 is oppositely, carries out heat release, EML laser and thermistor 20 is heated to the temperature of rising EML laser and thermistor 20; When receiving voltage signal, be the stability maintenance voltage signal, TEC element 10 maintains current current direction.
In practical application, define the operational amplifier Q in differential ratio circuit 50
1the multiplication factor of setting is A=R
7/ R
6, the differential voltage V that differential ratio circuit 50 is exported
tempcan be expressed as: V
temp=A * (V
i-V
thers_ref).In actual conventional application, the EML laser is generally operational between 20 ℃ to 70 ℃.According to the temperature-resistance characteristic of thermistor, thermistor 20 is generally operational in the scope of several K to tens K, like this, supposes thermistor the first sampled voltage V
1with the EML laser works when the lower limit temperature, the lower limit resistance value correspondence of thermistor, thermistor the second sampled voltage V
2with the EML laser works when the ceiling temperature, the upper limit resistance value correspondence of thermistor, thermistor sampled voltage V
ispan is V
1to V
2between, like this, the differential voltage V of differential ratio circuit 50 outputs
tempspan is V
temp1=A * (V
1-V
thers_ref) to V
temp2=A * (V
2-V
thers_ref) between.
In practical application, in the situation that the reference voltage of the ADC sampling channel in MCU30 is definite, the voltage sample scope of the whole sampling interval of ADC is that 0V is to reference voltage.Therefore, by the preset reference voltage V in differential ratio circuit
thers_ref(V
thers_ref=R
3/ (R
2+ R
3) * VREF), thermistor the first sampled voltage V1 that the ratio of setting is corresponding with the lower resistance value of thermistor is slightly little, guarantees V
temp1approach 0V, V
temp2approach the reference voltage of the ADC sampling channel in MCU30, like this, can be so that the excursion of the thermistor voltage through difference processing of ADC sampling can be amplified to the whole sampling interval of ADC, allow ADC path 10 0% be utilized, thereby promote the utilance of ADC passage, improve the sampling precision of the ADC of unit, then improve the lasting accuracy of EML laser temperature.Simultaneously, the structural change that the differential ratio circuit of increase causes with respect to the analog-to-digital conversion figure place that promotes ADC, design and production cost can be ignored comparatively speaking, thereby effectively reduce the temperature-control circuit cost.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention the present invention.Like this, if of the present invention these are revised and within modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention also comprises these changes and modification interior.
Claims (10)
1. the temperature-control circuit based on thermoelectric refrigerating unit comprises: thermoelectric refrigerating unit TEC element, thermistor and TEC control unit, it is characterized in that, and also comprise: micro-control unit MCU and differential ratio circuit; Wherein,
Described thermistor is arranged at the surface of described TEC element, with described differential ratio circuit, is connected;
Described differential ratio circuit, for gathering the voltage of described thermistor, carry out differential amplification by the difference between the thermistor voltage of collection and preset reference voltage, obtains differential voltage;
Described MCU, for receiving the differential voltage from described differential ratio circuit, and, according to pre-stored thermistor voltage and the mapping relations of differential voltage, obtain and the corresponding thermistor voltage of the differential voltage received; According to the thermistor voltage obtained, in conjunction with pre-stored thermistor resistance and the mapping relations of thermistor voltage, obtain and the corresponding thermistor resistance value of the thermistor voltage obtained; According to the temperature-resistance characteristic of thermistor, obtain the sample temperature of the current thermistor corresponding with the thermistor resistance value of obtaining again; The sample temperature of thermistor and predefined target temperature are compared, according to comparative result, produce TEC adjustment signal;
Described TEC control unit, be converted to for the TEC adjustment signal that will receive from described MCU the voltage signal of controlling current direction;
Described TEC element, the voltage signal for according to from described TEC control unit, carry out neither endothermic nor exothermic.
2. the temperature-control circuit based on thermoelectric refrigerating unit according to claim 1, it is characterized in that, described differential ratio circuit comprises: operational amplifier, the first resistance, the second resistance, the 3rd resistance, the 4th resistance, the 5th resistance, the 6th resistance, the 7th resistance, the first electric capacity, the second electric capacity; Wherein,
The in-phase input end of described operational amplifier is connected with an end of described the 4th resistance, an end of described the 5th resistance respectively, the other end ground connection of described the 5th resistance, the other end of described the 4th resistance is connected with an end of an end of described the first resistance, described the first electric capacity and an end of described thermistor respectively;
Apply constant voltage at the other end of described the first resistance and an end of described the second resistance simultaneously; The other end of described the first electric capacity and the equal ground connection of the other end of described thermistor;
The inverting input of described operational amplifier is connected with an end of described the 6th resistance, an end of described the 7th resistance respectively, wherein, the other end of described the 7th resistance is connected with the output of described operational amplifier, the other end of described the 6th resistance is connected with the other end of described the second resistance, an end of described the 3rd resistance, the other end ground connection of described the 3rd resistance;
The output of described operational amplifier is connected with the input of described MCU.
3. the temperature-control circuit based on thermoelectric refrigerating unit according to claim 2, is characterized in that, described differential ratio circuit further comprises:
The second electric capacity, an end of the second electric capacity is connected with the output of described operational amplifier, other end ground connection.
4. according to the described temperature-control circuit based on thermoelectric refrigerating unit of claim 2 or 3, it is characterized in that, the ratio of described the 4th resistance and described the 5th resistance equals the ratio of described the 6th resistance and described the 7th resistance.
5. the temperature-control circuit based on thermoelectric refrigerating unit according to claim 4, is characterized in that, the resistance of described the 4th resistance equates with the resistance of the 6th resistance, and the resistance of described the 5th resistance equates with the resistance of the 7th resistance.
6. the temperature-control circuit based on thermoelectric refrigerating unit according to claim 2, is characterized in that,
Described constant voltage is carried out dividing potential drop by described the second resistance, described the 3rd resistance, and the 3rd node place between described the second resistance and described the 3rd resistance forms described preset reference voltage.
7. the temperature-control circuit based on thermoelectric refrigerating unit according to claim 2, is characterized in that, described the second electric capacity, for destroying the self-oscillation condition of described Voltage Feedback network, keeps the steady operation of described differential ratio circuit.
8. the temperature-control circuit based on thermoelectric refrigerating unit according to claim 1, is characterized in that, describedly produces TEC adjustment signal according to comparative result and be specially:
When the sample temperature of described thermistor, higher than target temperature, described MCU produces the TEC adjustment signal meaned with positive level that makes the heat absorption of TEC element;
When the sample temperature of described thermistor, lower than target temperature, described MCU produces the TEC adjustment signal meaned with negative level that makes the TEC unit heat discharging;
When the sample temperature of described thermistor equals target temperature, described MCU produces and makes the TEC element maintain the TEC adjustment signal meaned with zero level of current state.
9. the temperature-control circuit based on thermoelectric refrigerating unit according to claim 8, is characterized in that, the described TEC adjustment signal that will receive from described MCU is converted to the voltage signal of controlling current direction, is specially:
When the TEC adjustment signal received means with positive level, the forward bias voltage signal that the current direction that described TEC control unit is controlled the TEC element to described TEC element output is forward;
When the TEC adjustment signal received means with negative level, the negative sense biasing voltage signal that the current direction that described TEC control unit is controlled the TEC element to described TEC element output is negative sense;
When the TEC adjustment signal received means with zero level, described TEC control unit maintains the stability maintenance voltage signal of the current current direction of TEC element to described TEC element output.
10. the temperature-control circuit based on thermoelectric refrigerating unit according to claim 9, is characterized in that, described basis, from the voltage signal of described TEC control unit, is carried out neither endothermic nor exothermic, is specially:
When the voltage signal from described TEC control unit is the forward bias voltage signal, the current direction of described TEC element is forward, is absorbed heat, and described thermistor is freezed, and reduces the temperature of described thermistor;
When the voltage signal from described TEC control unit is the reverse bias voltage signal, the current direction of described TEC element is oppositely, carries out heat release, described thermistor is heated to the temperature of the described thermistor that raises;
When the voltage signal from described TEC control unit is the stability maintenance voltage signal, described TEC element maintains current current direction.
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