CN219778898U - Insulated gate bipolar transistor module - Google Patents
Insulated gate bipolar transistor module Download PDFInfo
- Publication number
- CN219778898U CN219778898U CN202320282713.6U CN202320282713U CN219778898U CN 219778898 U CN219778898 U CN 219778898U CN 202320282713 U CN202320282713 U CN 202320282713U CN 219778898 U CN219778898 U CN 219778898U
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- Prior art keywords
- end plate
- bipolar transistor
- insulated gate
- gate bipolar
- module main
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- 239000011347 resin Substances 0.000 claims abstract description 25
- 229920005989 resin Polymers 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000009434 installation Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 9
- 238000012423 maintenance Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 102100023170 Nuclear receptor subfamily 1 group D member 1 Human genes 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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Abstract
The utility model discloses an insulated gate bipolar transistor module which comprises a module main body, a resin outer cover and an auxiliary power receiving end plate, wherein a top cover is arranged in the middle of the top end of the module main body, the top cover is provided with the resin outer cover which can be installed in a sliding embedded mode, the resin outer cover is provided with three main terminals, one end of the module main body is provided with the detachable auxiliary power receiving end plate, the top of the auxiliary power receiving end plate is provided with the auxiliary terminal, a metal substrate is arranged in the module main body, and an IGBT chip is arranged at the top of the metal substrate. The middle part of one end of the module main body is provided with the end head, the end head is provided with the locking groove, the auxiliary electric connecting end plate is embedded and fixed with the end head through the electric connecting head at one side of the auxiliary electric connecting end plate, the top of the auxiliary electric connecting end plate is provided with the auxiliary terminal, and the auxiliary electric connecting end plate is convenient for auxiliary electric connection through the detachable auxiliary electric connecting end plate, so that the auxiliary electric connecting end plate is convenient for subsequent replacement and maintenance; the top of the module main body is provided with a top cover, and the top cover is provided with a clamping groove.
Description
Technical Field
The utility model relates to the field of insulated gate bipolar transistors, in particular to an insulated gate bipolar transistor module.
Background
The IGBT and the insulated gate bipolar transistor are composite full-control voltage-driven power semiconductor devices consisting of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), and have the advantages of high input impedance of the MOSFET and low conduction voltage drop of the GTR;
such as publication number CN211700252U (insulated gate bipolar transistor device and semiconductor chip): the semiconductor device comprises a bottom plate, at least two direct copper-clad substrates, at least two insulated gate bipolar transistor chips and at least two diode chips; the direct copper-clad substrates are arranged on the bottom plate, and each direct copper-clad substrate is at least provided with an insulated gate bipolar transistor chip and a diode chip; the diode chips are oppositely arranged, and at least two insulated gate bipolar transistor chips and the diode chips on the direct copper-clad substrate are arranged in a mirror image mode; the periphery of the insulated gate bipolar transistor chip and the diode chip on the direct copper-clad substrate is provided with an insulated groove so as to divide a heat dissipation area between the insulated gate bipolar transistor chip and the diode chip and the insulated groove, and the width of the heat dissipation area between the insulated gate bipolar transistor and the diode chip is larger than a preset width. The insulated gate bipolar transistor device and the semiconductor chip have good heat dissipation performance;
at present, the insulated gate bipolar transistor module is integrated, the main terminal and the auxiliary terminal are assembled through the integral shell, and the main terminal and the auxiliary terminal cannot be disassembled and replaced, so that the insulated gate bipolar transistor module is inconvenient to maintain later, and the outer cover of the main terminal and the main module body are integrated, so that the main terminal cannot be disassembled, and the power connection and distribution are inconvenient.
Disclosure of Invention
The utility model aims to provide an insulated gate bipolar transistor module, which solves the problems that the insulated gate bipolar transistor module proposed in the background art is integrally arranged, a main terminal and an auxiliary terminal are assembled through an integral shell and cannot be detached and replaced, so that the insulated gate bipolar transistor module is inconvenient to maintain later, and an outer cover of the main terminal is integrally arranged with a module main body, so that the main terminal cannot be detached and the power connection and distribution are inconvenient.
In order to achieve the above purpose, the present utility model provides the following technical solutions: the utility model provides an insulated gate bipolar transistor module, includes module main part, resin enclosing cover and auxiliary electric end plate, the top middle part of module main part is equipped with the top cap, be equipped with the resin enclosing cover of slidable mosaic installation on the top cap, the resin enclosing covers and is equipped with three main terminal, the one end of module main part is equipped with detachable auxiliary electric end plate, the top of auxiliary electric end plate is equipped with auxiliary terminal, the inside of module main part is equipped with metal base plate, the metal base plate top is equipped with the IGBT chip.
In a further embodiment, the two sides of the bottom of the resin outer cover are provided with embedded grooves, and the side walls of the embedded grooves are provided with convex clips.
In a further embodiment, the top of the top cover is provided with a clamping groove, the middle part of the clamping groove is provided with a wiring groove, and the embedded groove is connected with the clamping groove in a sliding embedded manner through a convex card.
In a further embodiment, the front and rear sides of the module main body are provided with radiating fins, and the corners of the two ends of the module main body are provided with fixing lugs.
In a further embodiment, a terminal is provided at a middle part of one end of the module body, and a locking groove is provided on the terminal.
In a further embodiment, handles are arranged at the centers of two sides of the auxiliary electric connection end plate, an electric connection head is arranged at one end of the auxiliary electric connection end plate, a plug is arranged on the side wall of the end part of the auxiliary electric connection end plate, the plug is fixedly inlaid with the locking groove, and the electric connection head is inlaid and spliced with the insertion hole on the end head.
Compared with the prior art, the utility model has the beneficial effects that:
1. the middle part of one end of the module main body is provided with the end head, the end head is provided with the locking groove, the auxiliary electric connecting end plate is embedded and fixed with the end head through the electric connecting head at one side of the auxiliary electric connecting end plate, the top of the auxiliary electric connecting end plate is provided with the auxiliary terminal, and the auxiliary electric connecting end plate is convenient for auxiliary electric connection through detachable replacement, and is convenient for subsequent replacement and maintenance.
2. The top of the module main body is provided with the top cover, the top cover is provided with the clamping groove, both sides of the bottom of the resin outer cover are respectively provided with the embedded groove, the embedded grooves are convenient to be connected with the clamping grooves in a sliding manner, the resin outer cover with the design is convenient for replacing the main terminal, and the design is convenient for subsequent disassembly and maintenance.
Drawings
Fig. 1 is a schematic structural diagram of an insulated gate bipolar transistor module according to the present utility model;
fig. 2 is a front view of the resin outer cap of the present utility model;
FIG. 3 is a front view of an auxiliary electrical terminal plate of the present utility model;
FIG. 4 is a top view of the auxiliary electrical end plate of the present utility model;
fig. 5 is a schematic structural view of the portion a of the present utility model.
In the figure: 1. a fixed ear; 2. a module body; 3. a heat radiation fin; 4. a top cover; 5. a resin outer cover; 6. an end head; 7. an auxiliary terminal; 8. an auxiliary electrical terminal plate; 9. a handle; 10. a locking groove; 11. a main terminal; 12. a plug; 13. a power connection head; 14. a metal substrate; 15. an IGBT chip; 16. a clamping groove; 17. and embedding grooves.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments.
Referring to fig. 1-5, an embodiment of the present utility model is provided: the utility model provides an insulated gate bipolar transistor module, including module main part 2, resin enclosing cover 5 and supplementary electric end plate 8, the top middle part of module main part 2 is equipped with top cap 4, be equipped with the resin enclosing cover 5 of slidable mosaic installation on the top cap 4, be equipped with three main terminal 11 on the resin enclosing cover 5, the one end of module main part 2 is equipped with detachable supplementary electric end plate 8, the top of supplementary electric end plate 8 is equipped with auxiliary terminal 7, the inside of module main part 2 is equipped with metal base plate 14, the metal base plate 14 top is equipped with IGBT chip 15.
The resin outer cover 5 is used for installing the main terminal 11, facilitating main power connection, the auxiliary power connection end plate 8 is used for auxiliary power connection, the auxiliary terminal 7 is used for wiring, the metal substrate 14 is used for facilitating the installation of the IGBT chip 15, the IGBT chip 15 is used for being a composite full-control voltage-driven power semiconductor device consisting of a BJT (bipolar transistor) and a MOS (insulated gate field effect transistor), and the composite full-control voltage-driven power semiconductor device has the advantages of high input impedance of a MOSFET and low conduction voltage drop of a GTR.
Further, the bottom both sides of resin enclosing cover 5 all are equipped with inlays groove 17, and the lateral wall of inlaying groove 17 is equipped with protruding card, and it is convenient to inlay concatenation fixed with resin enclosing cover 5 and draw-in groove 16 through inlaying groove 17 and inboard protruding card.
Further, the top of the top cover 4 is provided with a clamping groove 16, the middle part of the clamping groove 16 is provided with a wiring groove, the embedded groove 17 is connected with the clamping groove 16 in a sliding embedded manner through a convex clamp, and the wiring groove is used for facilitating the power connection of the main terminal 11 on the resin outer cover 5.
Further, the front and rear faces of the module main body 2 are provided with radiating fins 3, and the corners of the two ends of the module main body 2 are provided with fixing lugs 1, so that the radiating capability of the module main body 2 is improved through the radiating fins 3.
Further, the middle part of one end of the module main body 2 is provided with a terminal 6, the terminal 6 is provided with a locking groove 10, and the locking groove 10 is used for embedding and splicing with a plug 12 at the end part of the auxiliary electric receiving end plate 8.
Further, the handles 9 are arranged at the centers of two sides of the auxiliary electric connection end plate 8, one end of the auxiliary electric connection end plate 8 is provided with the electric connection head 13, the side wall of the end part of the auxiliary electric connection end plate 8 is provided with the plug 12, the plug 12 is fixedly inlaid with the locking groove 10, and the electric connection head 13 is inlaid and spliced with the jack on the end head 6.
Working principle: during the use, inlay groove 17 slide mosaic through its bottom with resin enclosing cover 5 and install on draw-in groove 16, and resin enclosing cover 5 can be through the electric core that connects of its bottom connect the electricity with IGBT chip 15 through draw-in groove 16, inlay one side with supplementary electric end plate 8 and fix through electric head 13 and end 6, make plug 12 inlay fixedly with locked groove 10, it is convenient to hold to dismantle control supplementary electric end plate 8 through handle 9, be used for supplementary electric connection through supplementary terminal 7 at supplementary electric end plate 8 top, conveniently carry out bolt fastening with module main part 2 through fixed ear 1, be used for shielding the protection to module main part 2 top through top cover 4, be used for improving module main part 2's heat dispersion through radiating fin 3.
It will be evident to those skilled in the art that the utility model is not limited to the details of the foregoing illustrative embodiments, and that the present utility model may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the utility model being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (6)
1. The utility model provides an insulated gate bipolar transistor module, includes module main part (2), resin enclosing cover (5) and supplementary electric end plate (8), its characterized in that: the top middle part of module main part (2) is equipped with top cap (4), be equipped with resin enclosing cover (5) of slidable mosaic installation on top cap (4), be equipped with three main terminal (11) on resin enclosing cover (5), the one end of module main part (2) is equipped with detachable auxiliary power connection end plate (8), the top of auxiliary power connection end plate (8) is equipped with auxiliary terminal (7), the inside of module main part (2) is equipped with metal base plate (14), metal base plate (14) top is equipped with IGBT chip (15).
2. An insulated gate bipolar transistor module according to claim 1, wherein: the resin outer cover (5) is characterized in that embedded grooves (17) are formed in two sides of the bottom of the resin outer cover (5), and convex clamps are arranged on the side walls of the embedded grooves (17).
3. An insulated gate bipolar transistor module according to claim 2, wherein: the top of the top cover (4) is provided with a clamping groove (16), the middle part of the clamping groove (16) is provided with a wiring groove, and the embedded groove (17) is connected with the clamping groove (16) through protruding clamping in a sliding manner.
4. An insulated gate bipolar transistor module according to claim 1, wherein: radiating fins (3) are arranged at the front and rear sides of the module main body (2), and fixing lugs (1) are arranged at corners of two ends of the module main body (2).
5. An insulated gate bipolar transistor module according to claim 1, wherein: the middle part of one end of the module main body (2) is provided with a head (6), and the head (6) is provided with a locking groove (10).
6. An insulated gate bipolar transistor module according to claim 1, wherein: the both sides department of putting in the middle of supplementary electric end plate (8) all is equipped with handle (9), supplementary electric end plate (8) one end is equipped with connects electric head (13), the tip lateral wall of supplementary electric end plate (8) is equipped with plug (12), and plug (12) are inlayed fixedly with locked groove (10), connect electric head (13) and the jack on end (6) to inlay the concatenation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320282713.6U CN219778898U (en) | 2023-02-22 | 2023-02-22 | Insulated gate bipolar transistor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320282713.6U CN219778898U (en) | 2023-02-22 | 2023-02-22 | Insulated gate bipolar transistor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219778898U true CN219778898U (en) | 2023-09-29 |
Family
ID=88104330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320282713.6U Active CN219778898U (en) | 2023-02-22 | 2023-02-22 | Insulated gate bipolar transistor module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219778898U (en) |
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2023
- 2023-02-22 CN CN202320282713.6U patent/CN219778898U/en active Active
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