CN219778879U - Heat dissipation type packaging structure for MOS (metal oxide semiconductor) tube - Google Patents
Heat dissipation type packaging structure for MOS (metal oxide semiconductor) tube Download PDFInfo
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- CN219778879U CN219778879U CN202320587436.XU CN202320587436U CN219778879U CN 219778879 U CN219778879 U CN 219778879U CN 202320587436 U CN202320587436 U CN 202320587436U CN 219778879 U CN219778879 U CN 219778879U
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- Prior art keywords
- heat dissipation
- heat
- copper sheet
- dissipation type
- heat conduction
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 26
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 title abstract description 6
- 229910044991 metal oxide Inorganic materials 0.000 title abstract description 5
- 150000004706 metal oxides Chemical class 0.000 title abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052802 copper Inorganic materials 0.000 claims abstract description 55
- 239000010949 copper Substances 0.000 claims abstract description 55
- 238000005452 bending Methods 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000741 silica gel Substances 0.000 claims abstract description 8
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 8
- 230000007306 turnover Effects 0.000 claims 1
- 230000002035 prolonged effect Effects 0.000 abstract description 5
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a heat dissipation type packaging structure for a Metal Oxide Semiconductor (MOS) tube, and relates to the technical field of MOS tubes. The lead frame is arranged on the supporting copper blocks, pins are arranged on two sides of the lead frame, a heat-conducting silica gel sheet is attached to the bottom of the lead frame, a lower heat-conducting copper sheet is attached to the bottom of the heat-conducting silica gel sheet, and two bending pins of the lower heat-conducting copper sheet extend out of the bottom shell. The heat dissipation type packaging structure for the MOS tube uses the lead frame as an intermediate heat transfer medium to connect the exposed supporting copper block and the lower heat conduction copper sheet, so that the contact area with outside air is increased, the chip packaged inside can rapidly dissipate heat, and meanwhile, the contact area with outside air can be further increased by the upper heat conduction copper sheet, the heat dissipation area of the MOS tube is improved, the heat dissipation performance of the MOS tube is improved, and the service life of the MOS tube is prolonged.
Description
Technical Field
The utility model relates to the technical field of MOS (metal oxide semiconductor) tubes, in particular to a heat dissipation type packaging structure for a MOS tube.
Background
MOS tube is used as electronic switch in circuit, in switching power supply, the drain electrode of MOS tube is open circuit, the drain electrode is connected with load as it is, called open drain electrode, the open drain electrode circuit can switch on and off load current no matter how high voltage the load is connected with, so it is an ideal analog switch device.
At present, some MOS tubes are usually packaged and fixed through an adhesive, but because the shells of the MOS tubes are tightly connected, parts in the shells cannot be well radiated, and in the long-time use of the MOS tubes, heat in the MOS tubes cannot be quickly volatilized, so that the service life of the MOS tubes is influenced.
Disclosure of Invention
The utility model provides a heat dissipation type packaging structure for a Metal Oxide Semiconductor (MOS) tube, which aims to solve the problems in the background technology.
In order to achieve the above purpose, the present utility model provides the following technical solutions: the utility model provides a heat dissipation type packaging structure for MOS is used, includes the drain pan, the both sides of drain pan are inlayed and are had the supporting copper piece, and the one end of supporting copper piece extends to in the drain pan, settle on the supporting copper piece and have lead frame, and lead frame's both sides are provided with the pin, the bottom of lead frame is attached with the heat conduction silica gel piece, and the bottom of heat conduction silica gel piece is attached with down the heat conduction copper sheet, two bending feet of heat conduction copper sheet extend to outside the drain pan down, the joint has the top cap on the drain pan, and inlays on the top cap and be equipped with the heat conduction copper sheet.
Furthermore, the two sides of the bottom shell are provided with strip-shaped embedded openings, and the supporting copper blocks are positioned in the strip-shaped embedded openings.
Furthermore, the strip-shaped embedded opening is provided with a avoidance opening, and one end of the pin extends outwards from the avoidance opening.
Further, through holes are formed in two ends of the bottom shell, and two bending feet of the lower heat conducting copper sheet extend outwards from the through holes.
Furthermore, the two bending feet of the lower heat conduction copper sheet are flush with the bottom of the bottom shell and are clung to the bottom of the bottom shell.
Further, a step embedding opening is formed in the top cover, and the upper heat conducting copper sheet is located in the step embedding opening.
Compared with the prior art, the utility model provides the heat dissipation type packaging structure for the MOS tube, which has the following beneficial effects:
the heat dissipation type packaging structure for the MOS tube uses the lead frame as an intermediate heat transfer medium to connect the exposed supporting copper block and the lower heat conduction copper sheet, so that the contact area with outside air is increased, the chip packaged inside can rapidly dissipate heat, and meanwhile, the contact area with outside air can be further increased by the upper heat conduction copper sheet, the heat dissipation area of the MOS tube is improved, the heat dissipation performance of the MOS tube is improved, and the service life of the MOS tube is prolonged.
Drawings
FIG. 1 is a schematic diagram of the structure of the present utility model;
FIG. 2 is a side view of the present utility model;
fig. 3 is a top view of the present utility model.
In the figure: 1. a bottom case; 2. supporting the copper block; 3. a lead frame; 4. pins; 5. a thermally conductive silicone sheet; 6. a lower heat conducting copper sheet; 7. a top cover; 8. a heat conducting copper sheet is arranged on the upper part; 9. a strip-shaped embedding opening; 10. a avoidance port; 11. a through port; 12. step-shaped embedding opening.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Referring to fig. 1-3, the utility model discloses a heat dissipation type packaging structure for a MOS tube, comprising a bottom shell 1, wherein two sides of the bottom shell 1 are inlaid with supporting copper blocks 2, one ends of the supporting copper blocks 2 extend into the bottom shell 1, lead frames 3 are arranged on the supporting copper blocks 2, pins 4 are arranged on two sides of the lead frames 3, a heat conduction silica gel sheet 5 is adhered to the bottom of the lead frames 3, a lower heat conduction copper sheet 6 is adhered to the bottom of the heat conduction silica gel sheet 5, two bending feet of the lower heat conduction copper sheet 6 extend out of the bottom shell 1, a top cover 7 is clamped on the bottom shell 1, an upper heat conduction copper sheet 8 is embedded on the top cover 7, and the exposed supporting copper blocks 2 and the lower heat conduction copper sheet 6 are connected by using the lead frames 3 as intermediate heat transfer mediums, so that the contact area with outside air is increased, the chip packaged inside can rapidly dissipate heat, and meanwhile, the contact area between the upper heat conduction copper sheet 8 and outside air can be further increased, the heat dissipation area of the MOS tube is improved, and the service life of the MOS tube is prolonged.
Specifically, the two sides of the bottom shell 1 are provided with strip-shaped embedding openings 9, and the supporting copper block 2 is positioned in the strip-shaped embedding openings 9.
In this embodiment, the strip-shaped embedding opening 9 is an assembly structure and is used for limiting and fixing the installed supporting copper block 2.
Specifically, the strip-shaped embedding opening 9 is provided with a clearance opening 10, and one end of the pin 4 extends outwards from the clearance opening 10.
In this embodiment, the avoidance port 10 is a avoidance structure so as to be connected to an external circuit through the pin 4.
Specifically, the two ends of the bottom shell 1 are provided with through holes 11, and the two bending feet of the lower heat conducting copper sheet 6 extend outwards from the through holes 11.
In this embodiment, the through hole 11 is a space-avoiding structure, so that the lower heat conducting copper sheet 6 can conduct out the internal heat.
Specifically, the two bending feet of the lower heat conducting copper sheet 6 are flush with the bottom of the bottom shell 1 and are clung to the bottom of the bottom shell 1.
In this embodiment, the two bending feet of the lower heat conducting copper sheet 6 are tightly attached to the bottom of the bottom shell 1, so that they can be engaged with the package shell.
Specifically, the top cover 7 is provided with a step embedding opening 12, and the upper heat conducting copper sheet 8 is positioned in the step embedding opening 12.
In this embodiment, the step notch 12 is an assembly structure for limiting and fixing the installed upper heat conducting copper sheet 8.
When in use, the lead frame 3 (which is used as a chip carrier of an integrated circuit and is a key structural member for realizing the electric connection between the lead-out end of the internal circuit of the chip and the outer lead by means of bonding materials and forming an electric loop, and plays a role of a bridge connected with an external lead, and most of semiconductor integrated blocks are required to use the lead frame 3) is used as an intermediate heat transfer medium to connect the exposed supporting copper block 2 and the lower heat conducting copper sheet 6, so that the contact area with outside air is increased, the chip packaged in the inside can rapidly dissipate heat, and meanwhile, the contact area between the upper heat conducting copper sheet 8 and outside air can be further increased, the heat dissipation area of the MOS tube is improved, the heat dissipation performance of the MOS tube is improved, and the service life of the MOS tube is prolonged.
In summary, according to the heat dissipation type packaging structure for the MOS tube, the lead frame 3 is used as an intermediate heat transfer medium to connect the exposed supporting copper block 2 and the lower heat conduction copper sheet 6, so that the contact area with the outside air is increased, the chip packaged inside can rapidly dissipate heat, and meanwhile, the contact area with the outside air can be further increased by the upper heat conduction copper sheet 8, the heat dissipation area of the MOS tube is increased, the heat dissipation performance of the MOS tube is improved, and the service life of the MOS tube is prolonged.
Although embodiments of the present utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The utility model provides a heat dissipation type packaging structure for MOS pipe, includes drain pan (1), its characterized in that: the utility model discloses a solar cell module, including drain pan (1), support copper piece (2) are inlayed to both sides of drain pan (1), and in the one end of support copper piece (2) extends to drain pan (1), settle on support copper piece (2) lead frame (3), and the both sides of lead frame (3) are provided with pin (4), the bottom of lead frame (3) is attached with heat conduction silica gel piece (5), and the bottom of heat conduction silica gel piece (5) is attached with down heat conduction copper sheet (6), two bending feet of heat conduction copper sheet (6) extend to drain pan (1) outward, joint has top cap (7) on drain pan (1), and inlays on top cap (7) and be equipped with heat conduction copper sheet (8).
2. The heat dissipation type package structure for a MOS transistor as claimed in claim 1, wherein: the two sides of the bottom shell (1) are provided with strip-shaped embedded openings (9), and the supporting copper blocks (2) are positioned in the strip-shaped embedded openings (9).
3. The heat dissipation type package structure for a MOS transistor as claimed in claim 2, wherein: the strip-shaped embedded opening (9) is provided with a avoidance opening (10), and one end of the pin (4) extends outwards from the avoidance opening (10).
4. The heat dissipation type package structure for a MOS transistor as claimed in claim 1, wherein: the bottom of drain pan (1) both ends have seted up through-hole (11), two turn over foot from through-hole (11) outwards extend of lower heat conduction copper sheet (6).
5. The heat dissipation type package structure for a MOS transistor as claimed in claim 1, wherein: the two bending feet of the lower heat conduction copper sheet (6) are flush with the bottom of the bottom shell (1) and are clung to the bottom of the bottom shell (1).
6. The heat dissipation type package structure for a MOS transistor as claimed in claim 1, wherein: the top cover (7) is provided with a step embedded opening (12), and the upper heat conducting copper sheet (8) is positioned in the step embedded opening (12).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320587436.XU CN219778879U (en) | 2023-03-13 | 2023-03-13 | Heat dissipation type packaging structure for MOS (metal oxide semiconductor) tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320587436.XU CN219778879U (en) | 2023-03-13 | 2023-03-13 | Heat dissipation type packaging structure for MOS (metal oxide semiconductor) tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219778879U true CN219778879U (en) | 2023-09-29 |
Family
ID=88132963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320587436.XU Active CN219778879U (en) | 2023-03-13 | 2023-03-13 | Heat dissipation type packaging structure for MOS (metal oxide semiconductor) tube |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219778879U (en) |
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2023
- 2023-03-13 CN CN202320587436.XU patent/CN219778879U/en active Active
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