CN219731050U - Novel magnetron sputtering equipment - Google Patents
Novel magnetron sputtering equipment Download PDFInfo
- Publication number
- CN219731050U CN219731050U CN202320891865.6U CN202320891865U CN219731050U CN 219731050 U CN219731050 U CN 219731050U CN 202320891865 U CN202320891865 U CN 202320891865U CN 219731050 U CN219731050 U CN 219731050U
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- CN
- China
- Prior art keywords
- reaction chamber
- target
- chamber
- magnetron sputtering
- turbomolecular pump
- Prior art date
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000004544 sputter deposition Methods 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 238000004891 communication Methods 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 7
- 239000013077 target material Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
The utility model discloses novel magnetron sputtering equipment, which comprises an equipment bracket for installing the whole sputtering equipment and casters arranged below the equipment bracket and convenient for movement of the equipment bracket, wherein a reaction cavity is arranged in front of the equipment bracket, the rear end of the reaction cavity is communicated with a turbomolecular pump, the right side of the reaction cavity is communicated with a vacuum buffer chamber, the multilayer coating of different materials can be completed without changing targets under the vacuum condition, U-shaped annular wires with openings in the direction of the turbomolecular pump are arranged in the reaction cavity, the sputtering materials can be fully utilized for coating the surrounding wires, the utilization rate of the targets is improved, the reaction cavity is provided with the vacuum buffer chamber, the reaction cavity can always maintain a high vacuum state, the transfer of substrates is carried out through a manipulator, the process waiting time is shortened, the pollution of the chamber is reduced, and the film forming quality is improved.
Description
Technical Field
The utility model relates to the field of film forming, in particular to novel magnetron sputtering equipment.
Background
The sputtering film coating refers to that in a vacuum chamber, energetic particles (such as positive ions) are utilized to bombard a target material, so that atoms or atomic groups on the surface of the target material escape, and the escaped atoms form a film with the same components as the target material on the surface of a workpiece, and the method for preparing the film is called sputtering film coating;
in the prior art, the magnetron sputtering equipment has great loss of the target material in the sputtering process, the noble metal target material which is often utilized only accounts for 25% of the whole target material quality, a great amount of noble metal raw material is wasted in the sputtering film forming process, and a single target material and a single chamber cannot be used for multilayer film forming and have lower film forming quality.
Disclosure of Invention
The utility model aims to solve any one of the problems in the prior art, thereby providing a novel magnetron sputtering device.
In order to achieve the above purpose, the present utility model adopts the following technical scheme: the utility model provides a novel magnetron sputtering equipment, including the truckle that is used for installing the equipment support of whole sputtering equipment and the convenience that its removed that sets up of below, equipment support the place ahead is provided with the reaction chamber, the reaction chamber rear end is put through with the turbomolecular pump, the right side and the vacuum buffer chamber switch-on of reaction chamber, put through pipeline and mechanical pump between reaction chamber, vacuum buffer chamber and the turbomolecular pump, mechanical pump one side is provided with oil filter, the reaction chamber upside is fixed with the target of two sections different materials, the reaction chamber downside is fixed with the base plate, the reaction intracavity is provided with the annular silk material of turbomolecular pump direction open-ended U type.
Further, the reaction chamber main part is the metal cavity, and the metal cavity back is provided with the connector, and metal cavity inner wall below is provided with the base plate mounting mouth, and the base plate card is established in the base plate mounting mouth, and metal cavity inner wall top rear end is provided with two symmetrical target mounting mouths, and two target mounting mouths inner card is equipped with the target of two sections different materials, and target mounting mouths front end is provided with first process gas interface, and the left side inner wall bottom of reaction chamber is provided with the pay-off mouth, and the right side inner wall of reaction chamber is provided with the second process gas interface.
Further, be provided with axostylus axostyle and the motor that are the U type and arrange in the metal cavity, the wire is the annular cover of U type and establishes the output shaft outer wall at axostylus axostyle and motor, and the axostylus axostyle is rotatable, and the motor can drive the wire and rotate under the axostylus axostyle is supplementary.
Further, a connection port of the metal cavity is communicated with the turbomolecular pump, a controller is arranged at the tail end of the turbomolecular pump, and a communication interface connected with the PC end is arranged on the side face of the controller.
Further, the feeding port of the metal cavity is communicated with the vacuum buffer chamber, the vacuum buffer chamber is used for assisting the feeding and discharging of the substrate in the reaction cavity, and the reaction cavity can always maintain a high vacuum state.
The beneficial effects of the utility model are as follows: the metal cavity is internally provided with two target mounting ports, so that multilayer coating of different materials can be completed without target replacement under vacuum conditions, multiple rows of wires are arranged between the substrate and the target, the wires are sleeved on the outer walls of the shaft rod and the output shaft of the motor, the motor can drive the wires to rotate, the wires are communicated with the cathode, sputtering materials can be fully utilized to coat surrounding wires, the utilization rate of the target is improved, the reaction cavity is provided with a vacuum buffer chamber, the reaction cavity can always maintain a high vacuum state, the transfer of the substrate is performed through the mechanical arm, the process waiting time is shortened, the pollution of the chamber is reduced, and the film forming quality is improved.
Drawings
FIG. 1 is a schematic view of the overall structure of the present utility model;
FIG. 2 is a front view of the entire present utility model;
FIG. 3 is a top view of the entirety of the present utility model;
FIG. 4 is a schematic structural view of a reaction chamber according to the present utility model;
FIG. 5 is a cross-sectional view of a reaction chamber of the present utility model;
FIG. 6 is a schematic view of a metal cavity according to the present utility model;
FIG. 7 is a schematic view of the installation of the wire of the present utility model.
In fig. 1 to 7, the correspondence between the component names or lines and the drawing numbers is: reaction chamber 1, metal cavity 11, base plate 12, axostylus axostyle 13, wire 14, motor 15, target 16, base plate mounting port 111, pay-off mouth 112, connector 113, target mounting port 114, first process gas interface 115, second process gas interface 116, vacuum buffer chamber 2, turbomolecular pump 3, equipment support 4, mechanical pump 5, oil filter 6, truckle 7.
Detailed Description
Please refer to fig. 1 to 7;
this embodiment provides a novel magnetron sputtering equipment, including the truckle 7 that is used for installing the equipment support 4 of whole sputtering equipment and its below set up and make things convenient for its removal, equipment support 4 the place ahead is provided with reaction chamber 1, reaction chamber 1 rear end and turbomolecular pump 3 switch-on, the right side and the vacuum buffer chamber 2 switch-on of reaction chamber 1, switch-on with mechanical pump 5 through the pipeline between reaction chamber 1, vacuum buffer chamber 2 and the turbomolecular pump 3, mechanical pump 5 one side is provided with oil filter 6, reaction chamber 1 upside is fixed with the target 16 of two sections different materials, reaction chamber 1 downside is fixed with base plate 12, be provided with the annular silk material 14 of turbomolecular pump 3 direction open-ended U type in the reaction chamber 1.
Preferably, the reaction chamber 1 main body is a metal chamber 11, a connection port 113 is arranged on the back of the metal chamber 11, a substrate mounting port 111 is arranged below the inner wall of the metal chamber 11, a substrate 12 is clamped in the substrate mounting port 111, two symmetrical target mounting ports 114 are arranged at the rear end above the inner wall of the metal chamber 11, two targets 16 made of different materials are clamped in the two target mounting ports 114, a first process gas interface 115 is arranged at the front end of the target mounting port 114, a feeding port 112 is arranged at the bottom of the inner wall of the left side of the reaction chamber 1, and a second process gas interface 116 is arranged on the inner wall of the right side of the reaction chamber 1.
In a specific embodiment, argon is introduced into the metal cavity 11 from the first process gas interface 115, high energy passes through the target mounting port 114 to bombard the target 16, the target 16 is used as a cathode, the substrate 12 is used as an anode, sputtering is performed on the target 16 to the substrate 12 on the basis of taking the argon as a medium, a film is formed by depositing the target 16 on the substrate 12, and the two targets can realize that multiple layers of coating films of different materials can be completed without replacing the target 16 under a vacuum condition.
Preferably, the gold metal cavity 11 is internally provided with a shaft rod 13 and a motor 15 which are arranged in a U shape, the wire 14 is annularly sleeved on the outer walls of the output shafts of the shaft rod 13 and the motor 15 in a U shape, the shaft rod 13 can rotate, and the motor 15 can drive the wire 14 to rotate under the assistance of the shaft rod 13.
In a specific embodiment, the wire 14 is in a U shape, no wire 14 is blocked between the substrate 12 and the target 16, the outer walls of the output shafts of the shaft rod 13 and the motor 15 are made of resin materials, damage to the wire 14 is prevented, the wire 14 is communicated with the cathode, the sputtering materials can be fully utilized to coat the surrounding wire 14, and the utilization rate of the target 16 is improved.
Preferably, the connection port 113 of the metal cavity 11 is communicated with the turbomolecular pump 3, a controller is arranged at the tail end of the turbomolecular pump 3, and a communication interface connected with the PC end is arranged on the side face of the controller.
In a specific embodiment, the start and stop of the turbomolecular pump 3 can be remotely controlled through the PC, personnel do not need to operate on the equipment body, and personnel injury caused by equipment electric leakage is prevented.
Preferably, the feeding port 112 of the metal cavity 11 is communicated with the vacuum buffer chamber 2, the vacuum buffer chamber 2 is used for assisting the feeding and discharging of the substrate 12 in the reaction cavity 1, and the reaction cavity 1 can always maintain a high vacuum state.
In a specific embodiment, the vacuum buffer chamber 2 connected with the reaction chamber 1, the reaction chamber 1 can always maintain a high vacuum state, and the transfer of the substrate 12 is performed in the vacuum buffer chamber 2 by a manipulator, so that the process waiting time is shortened, and the pollution of the chamber is reduced and the film forming quality is improved.
The foregoing is only a preferred embodiment of the present utility model, but the scope of the present utility model is not limited thereto, and any person skilled in the art, who is within the scope of the present utility model, should make equivalent substitutions or modifications according to the technical scheme of the present utility model and the inventive concept thereof, and should be covered by the scope of the present utility model.
Claims (5)
1. A novel magnetron sputtering device is characterized in that: including equipment support (4) that are used for installing whole sputtering equipment and truckle (7) that make things convenient for its removal that the below set up, equipment support (4) the place ahead is provided with reaction chamber (1), reaction chamber (1) rear end and turbomolecular pump (3) switch-on, the right side and the vacuum buffer chamber (2) switch-on of reaction chamber (1), switch-on through pipeline and mechanical pump (5) between reaction chamber (1) vacuum buffer chamber (2) and turbomolecular pump (3), mechanical pump (5) one side is provided with oil filter (6), reaction chamber (1) upside is fixed with target (16) of two sections different materials, reaction chamber (1) downside is fixed with base plate (12), be provided with annular silk material (14) of U of turbomolecular pump (3) direction open-ended in reaction chamber (1).
2. The novel magnetron sputtering apparatus as claimed in claim 1, wherein: the reaction chamber (1) main part is metal cavity (11), metal cavity (11) back is provided with connector (113), metal cavity (11) inner wall below is provided with base plate installing port (111), base plate (12) card is established in base plate installing port (111), metal cavity (11) inner wall top rear end is provided with target installing port (114) of two symmetries, two target installing port (114) inside callipers are equipped with target (16) of two different materials, target installing port (114) front end is provided with first process gas interface (115), the left side inner wall bottom of reaction chamber (1) is provided with pay-off mouth (112), the right side inner wall of reaction chamber (1) is provided with second process gas interface (116).
3. The novel magnetron sputtering apparatus as claimed in claim 2, wherein: the wire rod is characterized in that a shaft rod (13) and a motor (15) which are arranged in a U-shaped mode are arranged in the metal cavity (11), the wire rod (14) is annularly sleeved on the outer walls of output shafts of the shaft rod (13) and the motor (15), the shaft rod (13) can rotate, and the motor (15) can drive the wire rod (14) to rotate under the assistance of the shaft rod (13).
4. A novel magnetron sputtering apparatus as claimed in claim 3, wherein: the connection port (113) of the metal cavity (11) is communicated with the turbomolecular pump (3), a controller is arranged at the tail end of the turbomolecular pump (3), and a communication interface connected with the PC end is arranged on the side face of the controller.
5. The novel magnetron sputtering apparatus as claimed in claim 2, wherein: the feeding port (112) of the metal cavity (11) is communicated with the vacuum buffer chamber (2), the vacuum buffer chamber (2) is used for assisting the feeding and discharging of the substrate (12) in the reaction cavity (1), and the reaction cavity (1) can always maintain a high vacuum state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320891865.6U CN219731050U (en) | 2023-04-20 | 2023-04-20 | Novel magnetron sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320891865.6U CN219731050U (en) | 2023-04-20 | 2023-04-20 | Novel magnetron sputtering equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219731050U true CN219731050U (en) | 2023-09-22 |
Family
ID=88031273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320891865.6U Active CN219731050U (en) | 2023-04-20 | 2023-04-20 | Novel magnetron sputtering equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219731050U (en) |
-
2023
- 2023-04-20 CN CN202320891865.6U patent/CN219731050U/en active Active
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