CN113817999B - Vacuum coating equipment for preparing piezoelectric ceramics - Google Patents
Vacuum coating equipment for preparing piezoelectric ceramics Download PDFInfo
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- CN113817999B CN113817999B CN202110975854.1A CN202110975854A CN113817999B CN 113817999 B CN113817999 B CN 113817999B CN 202110975854 A CN202110975854 A CN 202110975854A CN 113817999 B CN113817999 B CN 113817999B
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- 238000001771 vacuum deposition Methods 0.000 title claims abstract description 60
- 239000000919 ceramic Substances 0.000 title claims abstract description 19
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 21
- 238000004544 sputter deposition Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 52
- 238000009826 distribution Methods 0.000 claims description 43
- 239000007789 gas Substances 0.000 claims description 34
- 238000004140 cleaning Methods 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000012495 reaction gas Substances 0.000 claims description 14
- 239000000498 cooling water Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 238000009529 body temperature measurement Methods 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000005339 levitation Methods 0.000 claims description 7
- 238000000992 sputter etching Methods 0.000 claims description 6
- 238000007667 floating Methods 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 230000003993 interaction Effects 0.000 claims description 4
- 238000012423 maintenance Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 2
- 238000013461 design Methods 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000011068 loading method Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000010923 batch production Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000005546 reactive sputtering Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 239000007888 film coating Substances 0.000 description 5
- 238000009501 film coating Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000010963 304 stainless steel Substances 0.000 description 1
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000009504 vacuum film coating Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of piezoelectric ceramics, in particular to vacuum coating equipment for preparing piezoelectric ceramics, which comprises a vacuum coating chamber, wherein a vacuum system is fixedly connected to the inner side of the vacuum coating chamber, a rotary tool rotating frame is fixedly connected to the bottom of the vacuum coating chamber, and in the invention, through the integrated standard design of the rotating tool rotating frame and a magnetron sputtering system, the equipment is stable in performance, convenient for batch production and transportation, adopts a plurality of planar targets and circular uniform layout design, can effectively improve the uniformity of piezoelectric ceramic film preparation in the coating process, adopts a rotary planar rectangular target, can effectively reduce the target base distance, improves the reactive sputtering deposition rate, adopts radio frequency magnetron sputtering coating, can be performed under low air pressure, is green and pollution-free, simultaneously improves the sputtering efficiency, increases the loading capacity by adopting the design of the rotary tool rotating frame, and can effectively prepare uniform film layers on a large-area continuous substrate.
Description
Technical Field
The invention relates to the technical field of piezoelectric ceramics, in particular to vacuum coating equipment for preparing piezoelectric ceramics.
Background
The piezoelectric ceramic is a novel functional electronic material capable of mutually converting mechanical energy and electric energy, has excellent stable electrical properties such as piezoelectricity, dielectric property, photoelectricity and the like, and has wide application market and development prospect in the fields such as industry, medicine, aerospace, biotechnology and the like.
In China, most enterprises still use a lagging technology of screen printing silver paste and high-temperature sintering to prepare the piezoelectric ceramic, so that the quality of a film layer is poor, the production cost is high, the energy consumption is high, and toxic gas emitted by the technology seriously pollutes the environment, therefore, the green sputtering technology is adopted to prepare the piezoelectric ceramic, the product quality is comprehensively improved, and the mass production is imperative.
Disclosure of Invention
The invention aims to provide vacuum coating equipment for preparing piezoelectric ceramics, which is used for solving the problems in the background technology.
In order to achieve the above purpose, the present invention provides the following technical solutions:
the utility model provides a vacuum coating equipment for preparing piezoceramics, includes the vacuum coating room, vacuum coating room inboard fixedly connected with vacuum system, vacuum coating room bottom fixedly connected with rotation type frock revolving rack, vacuum coating room front end center department fixedly connected with magnetron sputtering system, vacuum coating room inboard front end upper right side and vacuum coating room front end inboard front end lower left side all fixedly connected with floating anode system, vacuum coating room right side fixedly connected with biasing system, vacuum coating room inboard rear end fixedly connected with IET etching and cleaning system, vacuum coating room inboard front end upper left side and vacuum coating room front end inboard front end lower right side all fixedly connected with heating and temperature control system, vacuum coating room right side rear end fixedly connected with control system.
Preferably, the vacuum system comprises a mechanical pump, a film gauge, a cold cathode gauge and a pneumatic air release valve, wherein the mechanical pump is arranged outside the vacuum coating chamber, one end of the mechanical pump is communicated with a Roots pump through a connecting pipe, the other end of the Roots pump is communicated with a pneumatic vacuum baffle valve through the connecting pipe, the other end of the pneumatic vacuum baffle valve is communicated with a motor-driven throttle valve through a three-way pipe, the other end of the three-way pipe communicated with the pneumatic vacuum baffle valve is communicated with a pneumatic high-vacuum gate valve, the other end of the pneumatic high-vacuum gate valve is communicated with a magnetic levitation turbomolecular pump, the other end of the magnetic levitation turbomolecular pump is communicated with a Pirani gauge through the connecting pipe, and the other end of the Pirani gauge is communicated with a maintenance pump through the connecting pipe, and the motor-driven throttle valve, the film gauge, the cold cathode gauge and the pneumatic air release valve are all communicated with the vacuum coating chamber through the connecting pipe.
Preferably, the rotary tool rotating frame is used for installing the substrate to be coated, the rotary tool rotating frame is driven by a variable frequency rotating motor, and the revolution speed of the variable frequency rotating motor in the rotary tool rotating frame is 1-5 r/min.
Preferably, the magnetron sputtering system consists of a rotating planar cathode target and a radio frequency sputtering source, the rotating planar cathode target in the magnetron sputtering system is provided with 6 planar cathode rotating targets, the rotating planar cathode target in the magnetron sputtering system can freely rotate at 180 degrees, and the radio frequency sputtering source in the magnetron sputtering system is provided with six sets of inlet RF radio frequency power supplies.
Preferably, the bias system adopts an inlet pulse direct current bias power supply, the positive electrode of the bias system is connected with the vacuum cavity, and the negative electrode of the bias system is connected with the tool rotating frame.
Preferably, the electron emission cleaning in the IET etching and cleaning system adopts two sets of phi 100 arc sources, and two ends of IET ion etching components in the IET etching and cleaning system are connected with the positive electrode of the arc sources.
Preferably, three groups of heaters are arranged in the heating and temperature control system, the total power of the heaters in the heating and temperature control system is 27Kw, and 3K-type thermocouples are distributed on a cavity of the heating and temperature control system.
Preferably, the control system comprises an electric control system, a reaction gas distribution system, a compressed gas distribution system and a cooling water distribution system, the electric control system in the control system takes a PLC as a system control core, the electric control system in the control system performs data interaction through an upper computer, the reaction gas distribution system in the control system consists of an electromagnetic stop valve, a mass flow controller and a gas mixing tank, the reaction gas distribution system in the control system can be sequentially connected with argon, O2 and N2 gases from top to bottom, and the reaction gas distribution system in the control system adopts an American MKS mass flow controller.
Preferably, the compressed gas distribution system in the control system is used for cleaning and drying compressed gas, the compressed gas is connected to the compressed gas distribution system in the comprehensive control cabinet and then enters each cylinder through the two-position four-way valve, and the compressed gas distribution system in the control system is used for adjusting the movement direction of each cylinder through the electromagnetic two-position four-way valve.
Preferably, the cooling water distribution system in the control system consists of a total water inlet pipeline, a water flowmeter, a platinum resistor, a water pressure meter, a water distribution pipeline, a water flow switch integrated temperature measurement device, an electromagnetic valve, a total water return pipeline and the like, and the water flow switch integrated temperature measurement device in the cooling water distribution system in the control system is arranged at the water return port of each planar cathode, each arc source and each ion source.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, through the set rotary tool rotating frame and the magnetron sputtering system, the equipment adopts an integrated standard design, the performance is stable, batch production and transportation are convenient, a plurality of plane targets are adopted, a circular uniform layout design is carried out, the uniformity of piezoelectric ceramic film preparation can be effectively improved in the film coating process, the rotary plane rectangular targets are adopted, the structure is compact, the target size design is larger, the target base distance can be effectively reduced, the reactive sputtering deposition rate is improved, the radio frequency magnetron sputtering film coating is adopted, the process is simple, the cost is saved, the equipment can be carried out under low air pressure, the environment is free of pollution, the film performance is good, meanwhile, the sputtering efficiency is also improved, the rotary tool rotating frame is designed, the rotary film coating is carried out on a workpiece, the loading capacity is increased, the uniform film layer can be prepared on a large-area continuous substrate, and the uniformity and the production efficiency of the film layer can be effectively improved.
Drawings
FIG. 1 is a schematic diagram of the overall structure of the present invention;
FIG. 2 is a rear view of the present invention;
FIG. 3 is a right side view of the present invention;
FIG. 4 is a top view of the present invention;
fig. 5 is a schematic diagram of the overall structure of the vacuum system of the present invention.
In the figure: 1-vacuum coating chamber, 2-vacuum system, 201-mechanical pump, 202-Roots pump, 203-pneumatic vacuum baffle valve, 204-maintenance pump, 205-magnetic levitation turbomolecular pump, 206-pneumatic high vacuum gate valve, 207-Pirani gauge, 208-film gauge, 209-cold cathode gauge, 210-motor driven throttle valve, 211-pneumatic bleed valve, 3-rotary tool turret, 4-magnetron sputtering system, 5-floating anode system, 6-bias system, 7-IET etching and cleaning system, 8-heating and temperature control system, 9-control system.
Detailed Description
Example 1:
referring to fig. 1, 2, 3, 4 and 5, the present invention provides a technical solution:
the vacuum coating equipment for preparing the piezoelectric ceramics comprises a vacuum coating chamber 1, wherein a vacuum system 2 is fixedly connected to the inner side of the vacuum coating chamber 1, the vacuum system 2 comprises a mechanical pump 201, a film gauge 208, a cold cathode gauge 209 and a pneumatic air release valve 211, the mechanical pump 201 is arranged on the outer side of the vacuum coating chamber 1, one end of the mechanical pump 201 is communicated with a Roots pump 202 through a connecting pipe, the other end of the Roots pump 202 is communicated with a pneumatic vacuum baffle valve 203 through a connecting pipe, the other end of the pneumatic vacuum baffle valve 203 is communicated with a motor-driven throttle valve 210 through a three-way pipe, the other end of the three-way pipe communicated with the pneumatic vacuum baffle valve 203 is communicated with a pneumatic high vacuum gate valve 206, the other end of the pneumatic high vacuum gate valve 206 is communicated with a magnetic levitation turbomolecular pump 205, the other end of the magnetic levitation turbomolecular pump 205 is communicated with a Pirani gauge 207 through a connecting pipe, the other end of the Pirani gauge 207 is communicated with a maintenance pump 204 through a connecting pipe, a motor-driven throttle valve 210, a film gauge 208, a cold cathode gauge 209 and a pneumatic release valve 211 are all communicated with a vacuum coating chamber 1 through connecting pipes, the arrangement is convenient for carrying out stable vacuumizing treatment on the device, thereby ensuring the normal use of the device, the bottom of the vacuum coating chamber 1 is fixedly connected with a rotary tool rotating frame 3, the rotary tool rotating frame 3 is used for installing a substrate to be coated, the rotary tool rotating frame 3 is driven by a variable-frequency rotating motor, the revolution speed of the variable-frequency rotating motor in the rotary tool rotating frame 3 is 1-5 r/min, the arrangement ensures that the rotary tool rotating frame 3 is positively and negatively rotated, ensures the starting stability, increases the loading capacity, can prepare uniform film layers on a large-area continuous substrate, and can effectively improve the uniformity and the production efficiency of the film layers, the center of the front end of the vacuum coating chamber 1 is fixedly connected with a magnetron sputtering system 4, the magnetron sputtering system 4 consists of a rotating planar cathode target and a radio frequency sputtering source, the rotating planar cathode target in the magnetron sputtering system 4 is provided with 6 planar cathode rotating targets, the rotating planar cathode target in the magnetron sputtering system 4 can freely rotate by 180 degrees, the radio frequency sputtering source in the magnetron sputtering system 4 is provided with six sets of inlet RF radio frequency power supplies, the arrangement improves the utilization rate of a coating cavity, reduces the probability of target pollution, optimizes the target base distance, increases the electron travel, enhances the ionization and ion bombardment effects, improves the sputtering efficiency, and is fixedly connected with a floating anode system 5 at the right upper part of the front end of the inner side of the vacuum coating chamber 1 and a biasing system 6 at the left lower part of the front end of the inner side of the vacuum coating chamber 1, the biasing system 6 adopts an inlet pulse DC biasing power supply, the anode of the biasing system 6 is connected with a vacuum cavity, the cathode of the biasing system 6 is connected with a tool rotating frame, and the arrangement improves the energy of charged particles in vacuum through improving the energy of the coating cavity, bombards, so that the surface of a workpiece is subjected to high-energy coating after being subjected to impact with a new surface layer deposition film; the energy of charged particles in the vacuum plasma is improved and controlled, and the binding force between the film and the workpiece substrate is improved; the phenomenon that a bias power supply works in a vacuum plasma environment and burns a workpiece by cathode arc discharge caused by high voltage is overcome, the rear end of the inner side of a vacuum coating chamber 1 is fixedly connected with an IET etching and cleaning system 7, two sets of phi 100 arc sources are adopted for cleaning electron emission in the IET etching and cleaning system 7, two ends of IET ion etching components in the IET etching and cleaning system 7 are connected with the positive electrode of the arc sources, electrons in plasma are collected through an IET ion etching component to repel ions in the plasma, ions in the plasma are accelerated to bombard the workpiece, large metal particles are shielded in the bombardment process, so that the film pretreatment effect with purity requirements is better, a heating and temperature control system 8 is fixedly connected above the left front end of the inner side of the vacuum coating chamber 1 and below the right front end of the inner side of the vacuum coating chamber 1, three groups of heaters are arranged in the heating and temperature control system 8, the total power of the heaters in the heating and temperature control system 8 is 27Kw, 3K-type thermocouples are distributed on a cavity of the heating and temperature control system 8, the arrangement can monitor the temperature in the cavity in real time, the rear end of the right side of the vacuum coating chamber 1 is fixedly connected with a control system 9, the control system 9 comprises an electric control system, a reaction gas distribution system, a compressed gas distribution system and a cooling water distribution system, the electric control system in the control system 9 takes a PLC as a system control core, the electric control system in the control system 9 performs data interaction through an upper computer, the reaction gas distribution system in the control system 9 consists of an electromagnetic stop valve, a mass flow controller and a gas mixing tank, and the reaction gas distribution system in the control system 9 can be sequentially connected with argon gas, O2 gas and N2 gas from top to bottom, the reaction gas distribution system in the control system 9 adopts an American MKS mass flow controller, the setting realizes the real-time monitoring and operation of the running state of the equipment, after the equipment enters the background vacuum degree, the air pressure in the vacuum chamber can reach the dynamic balance required by the process, the compressed gas in the control system 9 is connected to the compressed gas distribution system in the comprehensive control cabinet and then enters each cylinder through two four-way valves, the compressed gas distribution system in the control system 9 adjusts the movement direction of each cylinder through an electromagnetic two-way valve, the setting realizes the driving of the parts such as each valve and the arc striking needle, the cooling water distribution system in the control system 9 consists of a total water inlet pipeline, a water flowmeter, a platinum resistor, a water pressure meter, a water distribution pipeline, a water flow switch integrated temperature measurement, an electromagnetic valve, a total water return pipeline and the like, and the water flow switch integrated temperature measurement in the control system 9 is arranged at the water return port of each plane cathode, the arc source and the ion source, the setting is convenient for detecting the on-off and temperature conditions of water flow in each path, and the water flow can be disconnected or the temperature is higher than the water temperature automatically sending signal to the self-locking protection state PLC.
The working flow is as follows: all electric appliances in the device are external power sources, and before the device is used, the vacuum coating chamber 1 is designed into a vertical cylinder, a double-layer water-cooling and double-door structure, and the diameter phi of an inscribed circle is 1100mm and the height is 1200mm; the shell is made of 304 stainless steel and is arranged on the underframe of the vacuum chamber; the vacuum seal adopts magnetic fluid dynamic seal and silica gel seal; 1 composite vacuum gauge, 1 film gauge, 1 resistor gauge and 1 air release valve are arranged above the vacuum chamber; the transmission system 1 sleeve and the bias voltage introducing device 1 sleeve are arranged below the vacuum chamber, when the device is used, the vacuum pumping treatment is matched with the vacuum system 2, because the rotary tool rotating frame 3 for mounting the substrate to be coated is driven by the variable-frequency rotary motor, the revolution rotating speed is 1-5 r/min, when the device is used, the speed can be regulated, the forward and reverse rotation can be controlled, the starting is stable, the loading capacity is increased, a uniform film layer can be prepared on a large-area continuous substrate, the uniformity and the production efficiency of the film layer can be effectively improved, the radio frequency magnetron sputtering system 4 consists of a rotary planar cathode target and a radio frequency sputtering source, the cathode target is provided with 6 planar cathode rotary targets, a single target can freely rotate at 180 degrees and can be automatically opened when the target works, so that the utilization rate of a film coating cavity is improved, the target pollution probability is reduced, the target base distance is optimized, the radio frequency sputtering source is provided with 6 sets of inlet RF power supplies, the electronic travel can be increased, the ionization and ion bombardment effect is improved, the sputtering efficiency is improved, the floating anode system 5 can be used for film coating, when the film is coated on a large-area continuous substrate, the vacuum sputtering system is provided with a vacuum film coating chamber, the vacuum film is directly subjected to the vacuum pulse, the vacuum film is directly contacts with a vacuum pulse carrier, the surface of a vacuum film is subjected to the vacuum pulse, and the vacuum particle is subjected to the vacuum pulse vacuum deposition, and the surface of a vacuum particle is subjected to the vacuum deposition, and the vacuum film is subjected to the vacuum deposition; the energy of charged particles in the vacuum plasma is improved and controlled, and the binding force between the film and the workpiece substrate is improved; the bias power supply is overcome to work in a vacuum plasma environment, the work piece is burnt by cathode arc discharge caused by high voltage, because the cleaning electron emission in the IET etching and cleaning system 7 adopts two sets of phi 100 arc sources, and the two ends of the IET ion etching component are connected with the positive electrode of the arc source, the IET ion etching component is used for collecting electrons in plasma, rejecting ions in the plasma, accelerating the ions in the plasma to bombard the work piece, shielding large metal particles in the bombarding process, so that the film pretreatment effect with purity requirement is better, because three sets of heaters are arranged on the heating and temperature control system 8, the total power is 27Kw, the temperature rise is ensured to be 0-500 ℃, 3K-type thermocouples are distributed on the chamber, the temperature in the chamber can be monitored in real time, because the PID adopts an inlet temperature control instrument, the constant temperature control range is ensured to be +/-3 ℃ and heated to 150 ℃ and less than or equal to 30min, because the control system 9 adopts an integrated electric control cabinet control system, the integrated electric control cabinet comprises four independent systems, namely an electric control system, a reaction gas distribution system, a compressed gas distribution system and a cooling water distribution system, so that the electric control system taking a PLC as a system control core is used, the data interaction is carried out through an upper computer, the real-time monitoring and the operation of the running state of equipment are realized, the reaction gas distribution system consists of an electromagnetic stop valve, a mass flow controller and a gas mixing tank, four paths of gases can be accessed, argon, O2 and N2 gases are sequentially accessed from top to bottom, the regulation and the detection of the gas flow are realized through programming software by adopting an American MKS mass flow controller, so as to meet the process requirement, after the equipment enters the background vacuum degree, the reaction gas distribution system can control the flow of flushing process gas, so that the pressure of the vacuum chamber reaches the dynamic balance required by the process, after clean and dry compressed gas is connected to the compressed gas distribution system in the comprehensive control cabinet, the compressed gas distribution system is filtered by an oil-water separator, impurities and water enter each cylinder through two-position four-way valves, the moving direction of each cylinder is regulated through electromagnetic two-position four-way valves, driving of each valve, an arc striking needle and other parts is realized, the cooling water distribution system consists of a total water inlet pipeline, a water flowmeter, a platinum resistor, a water pressure meter, a water diversion pipeline, a water flow switch integrated temperature measurement, an electromagnetic valve, a total water return pipeline and the like, so that after the cooling water enters the distribution system through the total water pipe, the cooling water enters each cooling water channel through each water diversion pipeline, and finally flows into the total water return pipeline, and finally flows into a cold water machine for cooling, wherein the water flow switch integrated temperature measurement is arranged at a water return port of each plane cathode, an arc source and an ion source for detecting the on-off state and the temperature condition of each water flow, and once the water flow is disconnected or the temperature is higher than the water temperature, namely, the water flow is automatically detected to a water pressure alarm panel, and the water pressure alarm device is automatically detected, and the water pressure alarm device is automatically alarms, and the water pressure alarm device is automatically sent to the water pressure alarm device, and the water alarm device is automatically alarm and the water alarm pressure alarm device is detected.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to facilitate an understanding of the method of the present invention and its core ideas. The foregoing is merely a preferred embodiment of the invention, and it should be noted that, due to the limited text expressions, there is objectively no limit to the specific structure, and that, for a person skilled in the art, modifications, adaptations or variations may be made without departing from the principles of the present invention, and the above technical features may be combined in any suitable manner; such modifications, variations and combinations, or the direct application of the inventive concepts and aspects to other applications without modification, are contemplated as falling within the scope of the present invention.
Claims (6)
1. Vacuum coating equipment for preparing piezoelectric ceramics, which comprises a vacuum coating chamber (1), and is characterized in that: the vacuum coating device comprises a vacuum coating chamber (1), wherein a vacuum system (2) is fixedly connected to the inner side of the vacuum coating chamber (1), a rotary tool rotating frame (3) is fixedly connected to the bottom of the vacuum coating chamber (1), a magnetron sputtering system (4) is fixedly connected to the center of the front end of the vacuum coating chamber (1), a floating anode system (5) is fixedly connected to the right upper part of the front end of the inner side of the vacuum coating chamber (1) and the left lower part of the front end of the vacuum coating chamber (1), a biasing system (6) is fixedly connected to the right side of the vacuum coating chamber (1), an IET etching and cleaning system (7) is fixedly connected to the rear end of the inner side of the vacuum coating chamber (1), a heating and temperature control system (8) is fixedly connected to the left upper part of the front end of the inner side of the front end of the vacuum coating chamber (1), and a control system (9) is fixedly connected to the rear end of the right side of the vacuum coating chamber (1);
the vacuum system (2) comprises a mechanical pump (201), a film gauge (208), a cold cathode gauge (209) and a pneumatic release valve (211), wherein the mechanical pump (201) is arranged outside the vacuum coating chamber (1), one end of the mechanical pump (201) is communicated with a Roots pump (202) through a connecting pipe, the other end of the Roots pump (202) is communicated with a pneumatic vacuum baffle valve (203) through a connecting pipe, the other end of the pneumatic vacuum baffle valve (203) is communicated with a motor-driven throttle valve (210) through a three-way pipe, the other end of the three-way pipe communicated with the pneumatic vacuum baffle valve (203) is communicated with a pneumatic high vacuum gate valve (206), the other end of the pneumatic high vacuum gate valve (206) is communicated with a magnetic levitation turbomolecular pump (205), the other end of the magnetic levitation turbomolecular pump (205) is communicated with a Pirani gauge (207) through a connecting pipe, the other end of the Pirani gauge (207) is communicated with a maintenance pump (204) through a connecting pipe, and the motor-driven throttle valve (210), the film gauge (208) and the cold cathode gauge (209) are communicated with the vacuum coating chamber (1) through the connecting pipe;
the magnetron sputtering system (4) consists of a rotating planar cathode target and a radio frequency sputtering source, the rotating planar cathode target in the magnetron sputtering system (4) is provided with 6 planar cathode rotating targets, the rotating planar cathode target in the magnetron sputtering system (4) can freely rotate at 180 degrees, and the radio frequency sputtering source in the magnetron sputtering system (4) is provided with six sets of inlet RF radio frequency power supplies;
the electron emission is cleaned in the IET etching and cleaning system (7) by adopting two sets of phi 100 arc sources, and two ends of IET ion etching components in the IET etching and cleaning system (7) are connected with the positive electrode of the arc sources;
the control system (9) comprises an electric control system, a reaction gas distribution system, a compressed gas distribution system and a cooling water distribution system, the electric control system in the control system (9) takes a PLC as a system control core, the electric control system in the control system (9) performs data interaction through an upper computer, the reaction gas distribution system in the control system (9) consists of an electromagnetic stop valve, a mass flow controller and a gas mixing tank, and the reaction gas distribution system in the control system (9) can be sequentially connected with argon and O from top to bottom 2 、N 2 The gas, the reactive gas distribution system in the control system (9) adopts an American MKS mass flow controller.
2. A vacuum coating apparatus for preparing piezoelectric ceramics according to claim 1, wherein: the rotary tool rotating frame (3) is used for installing a substrate to be coated, the rotary tool rotating frame (3) is driven by a variable-frequency rotating motor, and the revolution rotating speed of the variable-frequency rotating motor in the rotary tool rotating frame (3) is 1-5 r/min.
3. A vacuum coating apparatus for preparing piezoelectric ceramics according to claim 1, wherein: the bias system (6) adopts an inlet pulse direct current bias power supply, the positive electrode of the bias system (6) is connected with the vacuum cavity, and the negative electrode of the bias system (6) is connected with the tool rotating frame.
4. A vacuum coating apparatus for preparing piezoelectric ceramics according to claim 1, wherein: three groups of heaters are arranged in the heating and temperature control system (8), the total power of the heaters in the heating and temperature control system (8) is 27Kw, and 3K-type thermocouples are distributed on a cavity of the heating and temperature control system (8).
5. A vacuum coating apparatus for preparing piezoelectric ceramics according to claim 1, wherein: the compressed gas distribution system in the control system (9) is used for cleaning and drying compressed gas, the compressed gas is connected to the compressed gas distribution system in the comprehensive control cabinet and then enters each cylinder through the two-position four-way valve, and the compressed gas distribution system in the control system (9) is used for adjusting the movement direction of each cylinder through the electromagnetic two-position four-way valve.
6. A vacuum coating apparatus for preparing piezoelectric ceramics according to claim 1, wherein: the cooling water distribution system in the control system (9) consists of a total water inlet pipeline, a water flowmeter, a platinum resistor, a water pressure meter, a water distribution pipeline, a water flow switch integrated temperature measurement device, an electromagnetic valve and a total water return pipeline, and the water flow switch integrated temperature measurement device in the cooling water distribution system in the control system (9) is arranged at the water return port of each planar cathode, each arc source and each ion source.
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