CN219642820U - Power module and vehicle - Google Patents
Power module and vehicle Download PDFInfo
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- CN219642820U CN219642820U CN202320498813.2U CN202320498813U CN219642820U CN 219642820 U CN219642820 U CN 219642820U CN 202320498813 U CN202320498813 U CN 202320498813U CN 219642820 U CN219642820 U CN 219642820U
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- 230000017525 heat dissipation Effects 0.000 claims abstract description 68
- 230000008878 coupling Effects 0.000 claims abstract 4
- 238000010168 coupling process Methods 0.000 claims abstract 4
- 238000005859 coupling reaction Methods 0.000 claims abstract 4
- 238000010438 heat treatment Methods 0.000 claims abstract 4
- 239000010410 layer Substances 0.000 claims description 123
- 239000000919 ceramic Substances 0.000 claims description 22
- 238000003466 welding Methods 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 12
- 239000011247 coating layer Substances 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 18
- 230000000694 effects Effects 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides a power module and a vehicle, which relate to the technical field of power semiconductors, and the power module comprises: an upper heat dissipation plate, a lower heat dissipation plate and a plurality of sub-power modules; the plurality of sub-power modules are horizontally arranged between the upper radiating plate and the lower radiating plate at intervals; each sub-power module includes: the upper layer is conducted the board, the lower floor is conducted the board, go up bridge chipset and lower bridge chipset and set up between upper layer is conducted the board and lower floor is conducted the board and is conducted the board with lower floor and is conducted the board and connect, upper layer is conducted the board and is laminated the rigid coupling with last heating panel, lower floor is conducted the board and is laminated the rigid coupling with lower heating panel. The utility model further provides a vehicle. The power module and the vehicle provided by the utility model solve the problem that the heat dissipation effect of the power semiconductor module is poor due to the stacked layout of the chip submodules in the power semiconductor module in the prior art, and improve the heat dissipation effect of the power module.
Description
Technical Field
The utility model relates to the technical field of power semiconductors, in particular to a power module and a vehicle.
Background
The power semiconductor device is a common device in an integrated circuit, and generates a large amount of heat in the working process, so that the power semiconductor device needs to be cooled, the number of packaging layers of the conventional power semiconductor module is large, the chip submodules inside the conventional power semiconductor module are stacked, and a thermal interface material is generally coated between the chip submodules and a radiator to dissipate heat, but the layout mode of the chip submodules of the power semiconductor module ensures that the heat generated by the chip submodules is easily accumulated, so that the overall heat dissipation effect of the power semiconductor module is poor, and the service performance of the power semiconductor module is affected.
Disclosure of Invention
The utility model provides a power module and a vehicle, aiming at the problem that a chip submodule in the power semiconductor module in the prior art is poor in heat dissipation effect of the power semiconductor module due to stacking layout.
In order to achieve the above object, the present utility model provides a power module including:
an upper heat dissipation plate, a lower heat dissipation plate and a plurality of sub-power modules;
the plurality of sub-power modules are horizontally arranged between the upper radiating plate and the lower radiating plate at intervals;
each sub-power module includes: the upper-layer conduction plate, the lower-layer conduction plate, the upper-bridge chip set and the lower-bridge chip set are arranged between the upper-layer conduction plate and the lower-layer conduction plate, the upper-bridge chip set and the lower-bridge chip set are connected with the upper-layer conduction plate and the lower-layer conduction plate in a conduction manner, the upper-layer conduction plate is fixedly connected with the upper heat dissipation plate in a lamination manner, and the lower-layer conduction plate is fixedly connected with the lower heat dissipation plate in a lamination manner.
Specifically, the upper bridge chip set comprises an upper bridge chip and an upper bridge buffer board;
the upper bridge chip is connected with the lower layer conducting plate in a conducting way;
the upper bridge buffer plate is positioned between the upper layer conducting plate and the lower layer conducting plate, one surface of the upper bridge buffer plate is fixedly connected with the upper bridge chip, and the other surface of the upper bridge buffer plate is fixedly connected with the upper layer conducting plate.
Specifically, the lower bridge chipset includes: a lower bridge chip and a lower bridge buffer board;
the lower bridge chip is connected with the upper layer conducting plate in a conducting way;
the lower bridge buffer plate is positioned between the upper layer conducting plate and the lower layer conducting plate, one surface of the lower bridge buffer plate is fixedly connected with the lower bridge chip, and the other surface of the lower bridge buffer plate is fixedly connected with the lower layer conducting plate.
Specifically, the upper bridge buffer plate is respectively attached to the upper bridge chip and the upper layer conducting plate in a welding mode;
the lower bridge buffer plate is respectively attached to the lower bridge chip and the lower layer conducting plate in a welding mode.
Specifically, the upper layer conductive plate includes: the first metal-clad layer, the upper ceramic layer and the second metal-clad layers corresponding to the number of the sub-power modules;
the first metal coating is attached to the upper radiating plate, the upper ceramic layer is attached to the first metal coating, one surface of the second metal coating is attached to and fixedly connected with the upper ceramic layer, and the other surface of the second metal coating is attached to and fixedly connected with the lower bridge chip.
Specifically, the lower-layer conductive plate includes: the third metal-clad layer, the lower ceramic layer and the fourth metal-clad layer corresponding to the number of the sub-power modules;
the third metal coating layer is attached to the lower heat dissipation plate, the lower ceramic layer is attached to the third metal coating layer, one surface of the fourth metal coating layer is attached to and fixedly connected with the lower ceramic layer, and the other surface of the fourth metal coating layer is attached to and fixedly connected with the upper bridge chip.
Specifically, the power module further includes: a heat dissipation needle;
a plurality of heat dissipation needles are arranged on one surface of the upper heat dissipation plate, which is away from the upper layer conducting plate;
and a plurality of heat dissipation needles are arranged on one surface of the lower heat dissipation plate, which is away from the lower conduction plate.
Specifically, the sub-power module further includes: the direct current terminal comprises a positive electrode terminal and a negative electrode terminal, the lower-layer conducting plate comprises a first area and a second area, the first area and the second area are arranged in an insulating mode, the upper bridge chip is arranged in the first area, the positive electrode terminal is conducted with the first area, and the negative electrode terminal is conducted with the second area.
Specifically, the sub-power module further includes: and the alternating current terminal is arranged on the upper-layer conducting plate.
The utility model further provides a vehicle, which comprises the power module.
According to the power module provided by the utility model, the plurality of sub-power modules are horizontally arranged between the upper radiating plate and the lower radiating plate at intervals, the upper conducting plate of the sub-power module is fixedly connected with the upper radiating plate in a bonding way, the lower conducting plate is fixedly connected with the lower radiating plate in a bonding way, and the heat generated by each sub-power module can be directly transmitted to the upper radiating plate and the lower radiating plate for radiating through the horizontal interval of the sub-power module, so that the heat is conveniently radiated, the heat is prevented from accumulating between the sub-power modules, the layout of the sub-power modules with smaller size is more convenient and flexible, and the function division of the sub-power modules is facilitated.
According to the power module provided by the utility model, the plurality of sub-power modules are horizontally arranged between the upper radiating plate and the lower radiating plate at intervals, so that the heat dissipation is convenient, the layout of the sub-power modules is more flexible and convenient, and the function division of the sub-power modules is facilitated. The utility model further provides a vehicle. The power module and the vehicle provided by the utility model solve the problem that the heat dissipation effect of the power semiconductor module is poor due to the stacked layout of the chip submodules in the power semiconductor module in the prior art, and improve the heat dissipation effect of the power module.
Additional features and advantages of embodiments of the utility model will be set forth in the detailed description which follows.
Drawings
The accompanying drawings are included to provide a further understanding of embodiments of the utility model and are incorporated in and constitute a part of this specification, illustrate embodiments of the utility model and together with the description serve to explain, without limitation, the embodiments of the utility model. In the drawings:
fig. 1 is a schematic structural diagram of a power module according to an embodiment of the present utility model;
FIG. 2 is a view in the direction A of FIG. 1;
FIG. 3 is a cross-sectional view of a power module provided by one embodiment of the present utility model;
FIG. 4 is a schematic diagram of a layout of a sub-power module in a power module according to the present utility model;
FIG. 5 is a schematic diagram of a layout of an upper bridge chipset in a power module according to the present utility model;
FIG. 6 is a schematic diagram illustrating a layout of a lower bridge chipset in a power module according to the present utility model;
FIG. 7 is a schematic diagram of a package structure of another housing in the power module according to the present utility model;
fig. 8 is a schematic structural diagram of an unpackaged housing in the power module of fig. 7.
Description of the reference numerals
1-an upper heat dissipation plate; 2-a lower heat dissipation plate; 3-upper layer conducting plates; 4-a lower layer conducting plate; a 5-sub-power module; 6-a housing; 7-radiating pins; 8-direct current terminals; 9-alternating current terminals; 31-a first metal-clad layer; 32-a ceramic layer; 33-a second metallization layer; 41-a third metal-clad layer; 42-a lower ceramic layer; 43-fourth metal-clad layer; 51-an upper bridge chipset; 52-a lower bridge chipset; 511-an upper bridge chip; 512-upper bridge buffer plate; 521-lower bridge chip; 522-lower bridge buffer plate; 10-low voltage leads; 81-a positive terminal; 82-negative terminal.
Detailed Description
The following describes specific embodiments of the present utility model in detail with reference to the drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the utility model, are not intended to limit the utility model.
In the embodiments of the present utility model, unless otherwise indicated, terms of orientation such as "upper, lower, top, bottom" are used generally with respect to the orientation shown in the drawings or with respect to the positional relationship of the various components with respect to one another in the vertical, vertical or gravitational directions.
FIG. 1 is a schematic diagram of a power module; FIG. 2 is a view in the direction A of FIG. 1; FIG. 3 is a cross-sectional view of a power module; FIG. 4 is a schematic layout of a sub-power module in a power module; FIG. 5 is a schematic diagram of a layout of a mid-bridge chipset in a power module; FIG. 6 is a schematic diagram of a layout of a lower bridge chipset in a power module;
FIG. 7 is a schematic diagram of a package structure of another housing in the power module; fig. 8 is a schematic structural diagram of an unpackaged housing in the power module of fig. 7.
As shown in fig. 1 to 8, the present utility model provides a power module including:
an upper heat dissipation plate 1, a lower heat dissipation plate 2 and a plurality of sub-power modules 5;
the plurality of sub-power modules 5 are horizontally arranged between the upper radiating plate 1 and the lower radiating plate 2 at intervals;
each sub-power module 5 comprises: the upper-layer conducting plate 3, the lower-layer conducting plate 4, the upper-bridge chip set 51 and the lower-bridge chip set 52, wherein the upper-bridge chip set 51 and the lower-bridge chip set 52 are arranged between the upper-layer conducting plate 3 and the lower-layer conducting plate 4, the upper-bridge chip set 51 and the lower-bridge chip set 52 are connected with the upper-layer conducting plate 3 and the lower-layer conducting plate 4 in a conducting manner, the upper-layer conducting plate 3 is fixedly connected with the upper radiating plate 1 in a bonding manner, and the lower-layer conducting plate 4 is fixedly connected with the lower radiating plate 2 in a bonding manner.
According to the power module provided by the utility model, as shown in fig. 3, a plurality of sub-power modules 5 are horizontally arranged between the upper heat dissipation plate 1 and the lower heat dissipation plate 2 at intervals, an upper bridge chip group 51 and a lower bridge chip group 52 of each sub-power module 5 are arranged between the upper heat dissipation plate 3 and the lower heat dissipation plate 4 and fixedly connected with the upper heat dissipation plate 3 and the lower heat dissipation plate 4, as shown in fig. 3, the upper heat dissipation plate 1 and the lower heat dissipation plate 2 are parallel, the upper heat dissipation plate 3 is fixedly connected with the upper heat dissipation plate 1 in a bonding manner, the upper heat dissipation plate 1 is larger than the upper heat dissipation plate 3, the lower heat dissipation plate 4 is fixedly connected with the lower heat dissipation plate 2 in a bonding manner, the area of the lower heat dissipation plate 2 is larger than the area of the lower heat dissipation plate 4, as shown in fig. 3, and the intervals among the plurality of sub-power modules 5 are arranged according to requirements, so that the layout of the sub-power modules 5 is more flexible, and the functions are conveniently divided, and meanwhile, heat generated by each sub-power module 5 can not be accumulated among the sub-power modules 5, so that the problem of poor heat dissipation effect of the power module caused by stacking of the semiconductor module in the power module in the prior art is solved.
In the process of packaging the power modules, the shell 6 is arranged, the sub-power modules 5 can be wrapped in a sealed environment through the shell 6, as shown in fig. 4, the number of the shell 6 is the same as that of the sub-power modules 5, each sub-power module 5 is independently packaged between the upper heat dissipation plate 1 and the lower heat dissipation plate 2 through each shell 6, the other way of packaging the sub-power modules 5 is that the shell 6 is large in size, all the sub-power modules 5 are simultaneously sealed through the shell 6, so that a good working environment is provided for the sub-power modules 5, and the specific way of sealing the sub-power modules 5 is adjusted according to practical application.
In one embodiment, as shown in fig. 3, the upper bridge chipset 51 includes: an upper bridge chip 511 and an upper bridge buffer board 512;
the upper bridge chip 511 is attached to the lower conductive board 4 and connected in a conductive manner;
the upper bridge buffer plate 512 is located between the upper layer conducting plate 3 and the lower layer conducting plate 4, one surface of the upper bridge buffer plate 512 is fixedly connected with the upper bridge chip 511, and the other surface is fixedly connected with the upper layer conducting plate 3.
The lower bridge chipset 52 includes: a lower bridge chip 521 and a lower bridge buffer plate 522;
the lower bridge chip 521 is connected with the upper layer conducting plate 3 in a conducting way;
the lower buffer plate 522 is located between the upper conductive plate 3 and the lower conductive plate 4, one surface of the lower buffer plate 522 is fixedly connected with the lower chip 521, and the other surface is fixedly connected with the lower conductive plate 4.
When each sub-power module 5 is packaged, the number of the upper bridge chip groups 51 and the lower bridge chip groups 52 is not limited, the upper bridge chip groups 51 and the lower bridge chip groups 52 are arranged between the upper-layer conducting plate 3 and the lower-layer conducting plate 4 according to actual needs, the upper bridge chips 511 of the upper bridge chip groups 51 of the sub-power modules 5 are connected with the lower-layer conducting plate 4 in a conducting manner, the upper bridge chips 511 are connected with the upper-layer conducting plate 3 in a laminating manner through the upper bridge buffer plate 512, the lower bridge chips 521 of the lower bridge chip groups 52 are connected with the upper-layer conducting plate 3 in a laminating manner, and the lower bridge chips 521 are connected with the lower-layer conducting plate 4 in a laminating manner through the lower bridge buffer plate 522.
In order to make the upper bridge buffer plate 512 and the lower bridge buffer plate 522 fixedly connected with the upper layer conducting plate 3 and the lower layer conducting plate 4, the upper bridge buffer plate 512 is fixedly connected with the upper bridge chip 511 and the upper layer conducting plate 3 respectively by welding; the lower buffer plate 522 is fixedly connected to the lower chip 521 and the lower conductive plate 4 by welding. The upper bridge buffer plate 512 forms a welding layer in the welding process with the upper bridge chip 511 and the upper layer conducting plate 3, the lower bridge buffer plate 522 also forms a welding layer in the welding process with the lower bridge chip 521 and the lower layer conducting plate 4, and the upper bridge buffer plate 512 and the lower bridge buffer plate 522 are arranged to reduce the welding stress of the upper layer conducting plate 3 and the lower layer conducting plate 4 and reduce the thermal deformation of the material module.
In one embodiment, the upper conductive plate 3 includes: a first metal-clad layer 31, an upper ceramic layer 32, and second metal-clad layers 33 corresponding to the number of sub-power modules 5;
the first metal-clad layer 31 is attached to the upper heat dissipation plate 1, the upper ceramic layer 32 is attached to the first metal-clad layer 31, one surface of the second metal-clad layer 33 is fixedly connected with the upper ceramic layer 32, and the other surface is fixedly connected with the lower bridge chip 521 of the lower bridge chip set 52 of the sub-power module 5.
The lower conductive plate 4 includes: a third metal-clad layer 41, a lower ceramic layer 42, and a fourth metal-clad layer 43 corresponding to the number of sub-power modules 5;
the third metal-clad layer 41 is attached to the lower heat dissipation plate 2, the lower ceramic layer 42 is attached to the third metal-clad layer 41, one surface of the fourth metal-clad layer 43 is attached to the lower ceramic layer 42, and the other surface is attached to and fixedly connected with the upper bridge chip 511 of the upper bridge chip set 51 of the corresponding sub-power module 5.
The first metal-clad layer 31 and the upper ceramic layer 32 are all integral plates, the second metal-clad layer 33 corresponds to the number of the sub-power modules 5, each second metal-clad layer 33 is fixedly connected with the lower bridge chip 521 of the corresponding sub-power module 5 through welding, the third metal-clad layer 41 and the lower ceramic layer 42 are all integral plates, the fourth metal-clad layer 43 corresponds to the number of the sub-power modules 5, and each fourth metal-clad layer 43 is fixedly connected with the upper bridge chip 511 of the corresponding sub-power module 5 through welding.
In order to make the upper heat dissipation plate 1 and the lower heat dissipation plate 2 have good heat dissipation performance, specifically, the power module 5 further includes: a heat radiation needle 7;
a plurality of heat dissipation pins 7 are arranged on one surface of the upper heat dissipation plate 1, which is away from the upper conducting plate 3;
a plurality of heat dissipation pins 7 are arranged on one surface of the lower heat dissipation plate 2, which faces away from the lower conduction plate 4. In actual use, all install upper heat dissipation plate 1 and lower heat dissipation plate 2 in the water course, like this, make the heat dissipation needle 7 of installing on upper heat dissipation plate 1 and lower heat dissipation plate 2 be in the water course equally, the heat conduction that sub-power module 5 during operation produced is to upper heat dissipation plate 1, lower heat dissipation plate 2 and heat dissipation needle 7, set up heat dissipation needle 7 and increased the radiating area, more do benefit to the heat dissipation, when heat dissipation needle 7 is in the water course, the heat on heat dissipation needle 7 is taken away in the heat exchange of cooling water flow through water course and heat dissipation needle 7, thereby reach the purpose of cooling for sub-power module 5.
In order to facilitate the communication between each sub-power module 5 and the outside, in particular, the sub-power module 5 further comprises: the dc terminal 8, the dc terminal includes a positive electrode terminal 81 and a negative electrode terminal 82, the lower conductive plate 4 includes a first area and a second area, the first area is insulated from the second area, the upper bridge chip is disposed in the first area, the positive electrode terminal 81 is in conduction with the first area, and the negative electrode terminal 82 is in conduction with the second area. The dc terminals 8 are disposed on the lower conductive plate 4, and the drain of the upper bridge chip 511 of the sub-power module 5 is electrically connected to the positive electrode or the negative electrode of the corresponding dc terminal 8 through the corresponding second metal-clad layer 33, and the drain of the lower bridge chip 521 is electrically connected to the positive electrode or the negative electrode of the corresponding dc terminal 8 through the corresponding fourth metal-clad layer 43.
Specifically, the sub-power module 5 further includes: an ac terminal 9, the ac terminal 9 being provided on the upper conductive plate 3. Each ac terminal 9 is connected to the three-phase line, the drain of the upper bridge chip 511 of each sub-power module 5 is conducted to the corresponding ac terminal 9 through the second metal-clad layer 33, and the drain of the lower bridge chip 521 is conducted to the corresponding ac terminal 9 through the fourth metal-clad layer 43.
The utility model further provides a vehicle, which comprises the power module.
According to the power module provided by the utility model, the plurality of sub-power modules are horizontally arranged between the upper radiating plate and the lower radiating plate at intervals, the upper conducting plate of the sub-power module is fixedly connected with the upper radiating plate in a bonding way, the lower conducting plate is fixedly connected with the lower radiating plate in a bonding way, and the heat generated by each sub-power module can be directly transmitted to the upper radiating plate and the lower radiating plate for radiating through the horizontal interval of the sub-power module, so that the heat is conveniently radiated, the heat is prevented from accumulating between the sub-power modules, the layout of the sub-power modules with smaller size is more convenient and flexible, and the function division of the sub-power modules is facilitated.
The power module and the vehicle provided by the utility model solve the problem that the heat dissipation effect of the power semiconductor module is poor due to the stacked layout of the chip submodules in the power semiconductor module in the prior art, and improve the heat dissipation effect of the power module.
The preferred embodiments of the present utility model have been described in detail above with reference to the accompanying drawings, but the present utility model is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present utility model within the scope of the technical concept of the present utility model, and all the simple modifications belong to the protection scope of the present utility model.
In addition, the specific features described in the above embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, various possible combinations are not described further.
Those skilled in the art will appreciate that all or part of the steps in a method for implementing the above embodiments may be implemented by a program stored in a storage medium, where the program includes several instructions for causing a single-chip microcomputer, chip or processor (processor) to perform all or part of the steps in a method according to the embodiments of the utility model. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
In addition, any combination of the various embodiments of the present utility model may be made, so long as it does not deviate from the idea of the embodiments of the present utility model, and it should also be regarded as what is disclosed in the embodiments of the present utility model.
Claims (10)
1. A power module, the power module comprising:
an upper heat dissipation plate (1), a lower heat dissipation plate (2) and a plurality of sub-power modules (5);
the plurality of sub-power modules (5) are horizontally arranged between the upper radiating plate (1) and the lower radiating plate (2) at intervals;
each sub-power module (5) comprises: upper conduction plate (3), lower floor conduction plate (4), upper bridge chipset (51) and lower bridge chipset (52), upper bridge chipset (51) with lower bridge chipset (52) set up upper conduction plate (3) with lower floor conduction plate (4) between, just upper bridge chipset (51) with lower bridge chipset (52) all with upper conduction plate (3) with lower floor conduction plate (4) are conducted and are connected, upper conduction plate (3) with upper heating panel (1) laminating rigid coupling, lower floor conduction plate (4) with lower heating panel (2) laminating rigid coupling.
2. The power module of claim 1, wherein the upper bridge chipset (51) comprises an upper bridge chip (511) and an upper bridge buffer board (512);
the upper bridge chip (511) is connected with the lower layer conducting plate (4) in a conducting way;
the upper bridge buffer plate (512) is positioned between the upper layer conducting plate (3) and the lower layer conducting plate (4), one surface of the upper bridge buffer plate (512) is fixedly connected with the upper bridge chip (511), and the other surface of the upper bridge buffer plate is fixedly connected with the upper layer conducting plate (3).
3. The power module of claim 2, wherein the lower bridge chipset (52) comprises: a lower bridge chip (521) and a lower bridge buffer board (522);
the lower bridge chip (521) is connected with the upper layer conducting plate (3) in a conducting way;
the lower bridge buffer plate (522) is located between the upper layer conducting plate (3) and the lower layer conducting plate (4), one surface of the lower bridge buffer plate (522) is fixedly connected with the lower bridge chip (521), and the other surface of the lower bridge buffer plate is fixedly connected with the lower layer conducting plate (4).
4. A power module according to claim 3, wherein the upper bridge buffer plate (512) is fixedly connected with the upper bridge chip (511) and the upper conducting plate (3) respectively by welding;
the lower bridge buffer plate (522) is fixedly connected with the lower bridge chip (521) and the lower layer conducting plate (4) respectively in a welding mode.
5. The power module according to claim 1, characterized in that the upper layer of conductive plates (3) comprises: a first metal-clad layer (31), an upper ceramic layer (32) and second metal-clad layers (33) corresponding to the number of the sub-power modules (5);
the first metal-clad layer (31) is attached to the upper radiating plate (1), the upper ceramic layer (32) is attached to the first metal-clad layer (31), one surface of the second metal-clad layer (33) is attached to and fixedly connected with the upper ceramic layer (32), and the other surface of the second metal-clad layer is attached to and fixedly connected with the lower bridge chip (521).
6. The power module according to claim 1, characterized in that the lower conductive plate (4) comprises: a third metal-clad layer (41), a lower ceramic layer (42) and a fourth metal-clad layer (43) corresponding to the number of the sub-power modules (5);
the third metal coating layer (41) is attached to the lower radiating plate (2), the lower ceramic layer (42) is attached to the third metal coating layer (41), one surface of the fourth metal coating layer (43) is attached to the lower ceramic layer (42), and the other surface of the fourth metal coating layer is attached to the upper bridge chip (511).
7. The power module according to claim 1, characterized in that the sub-power module (5) further comprises: a heat radiation needle (7);
a plurality of radiating pins (7) are arranged on one surface of the upper radiating plate (1) away from the upper conducting plate (3);
one surface of the lower radiating plate (2) deviating from the lower-layer conducting plate (4) is provided with a plurality of radiating pins (7).
8. The power module according to claim 1, characterized in that the sub-power module (5) further comprises: direct current terminal (8), direct current terminal includes positive electrode terminal (81) and negative electrode terminal (82), lower floor switches on board (4) including first region and second region, first region with the insulating setting of second region, on bridge chip (511) set up first region, positive electrode terminal (81) with first region switches on, negative electrode terminal (82) with second region switches on.
9. The power module according to claim 1, characterized in that the sub-power module (5) further comprises: and an alternating current terminal (9), wherein the alternating current terminal (9) is arranged on the upper-layer conducting plate (3).
10. A vehicle, characterized in that it comprises a power module according to any one of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320498813.2U CN219642820U (en) | 2023-03-03 | 2023-03-03 | Power module and vehicle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320498813.2U CN219642820U (en) | 2023-03-03 | 2023-03-03 | Power module and vehicle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219642820U true CN219642820U (en) | 2023-09-05 |
Family
ID=87808025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320498813.2U Active CN219642820U (en) | 2023-03-03 | 2023-03-03 | Power module and vehicle |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219642820U (en) |
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2023
- 2023-03-03 CN CN202320498813.2U patent/CN219642820U/en active Active
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