CN219297694U

CN219297694U - Single crystal growing furnace

Info

Publication number: CN219297694U
Application number: CN202222565885.2U
Authority: CN
Inventors: 陈俊宏
Original assignee: Zhonghuan Leading Xuzhou Semiconductor Materials Co ltd; Zhonghuan Advanced Semiconductor Materials Co Ltd
Current assignee: Zhonghuan Leading Semiconductor Technology Co ltd; Zhonghuan Leading Xuzhou Semiconductor Materials Co ltd
Priority date: 2022-09-26
Filing date: 2022-09-26
Publication date: 2023-07-04
Anticipated expiration: 2032-09-26

Abstract

The utility model discloses a single crystal growth furnace, comprising: a furnace body; a crucible; the bottom heat preservation structure is provided with a reflecting part and an absorbing part, the bottom heat preservation structure is arranged in the furnace chamber and positioned below the crucible, the reflecting part and the absorbing part are alternately connected, the heat reflectivity of the reflecting part is higher than that of the absorbing part, and the heat absorptivity of the absorbing part is higher than that of the reflecting part; the bottom heater is arranged between the crucible and the bottom heat insulation structure and is oppositely arranged with the bottom heat insulation structure in the up-down direction. According to the single crystal growth furnace provided by the utility model, the influence of unstable vortex on the bottom of the crucible is reduced, so that uneven temperature distribution in molten soup is improved, the problems of uneven crystal growth and uneven oxygen content in a crystal bar are solved, the heat loss of the bottom of the crucible is reduced by a bottom heat-insulating structure, the heat-insulating effect is improved, and the problem of energy consumption waste is solved.

Description

Single crystal growing furnace

Technical Field

The utility model relates to the technical field of semiconductor manufacturing, in particular to a single crystal growth furnace.

Background

In the related art, it is pointed out that a CZ method single crystal growing furnace mainly includes: the furnace comprises a quartz crucible, a graphite crucible for supporting the quartz crucible, a heating and heat insulating element, a furnace wall and the like. The elements that affect heat transfer and temperature distribution inside the furnace are generally referred to as thermal fields. The heating element in the thermal field comprises: the side heater and bottom heater, the side heater sets up along graphite crucible circumference for to graphite crucible's circumference lateral wall radiation heat, bottom heater sets up in graphite crucible bottom, is used for to graphite crucible's bottom radiation heat. However, in the actual production process, the bottom of the graphite crucible is affected by unstable vortex, so that the bottom is often heated unevenly, and the heat loss of the bottom heater is large due to the poor heat preservation effect of the heat preservation structure, so that the problem of energy consumption waste is caused.

Disclosure of Invention

The present utility model aims to solve at least one of the technical problems existing in the prior art. Therefore, the utility model aims at providing the single crystal growth furnace which can be heated uniformly and has good heat preservation effect.

According to the single crystal growth furnace of the present utility model, the single crystal growth furnace comprises: the furnace body is internally provided with a furnace chamber; the crucible is arranged in the furnace chamber and used for containing molten soup; the bottom heat preservation structure is provided with a reflecting part and an absorbing part, the bottom heat preservation structure is arranged in the furnace chamber and positioned below the crucible, the reflecting part and the absorbing part are alternately connected, wherein the heat reflectivity of the reflecting part is higher than that of the absorbing part, and the heat absorptivity of the absorbing part is higher than that of the reflecting part; the bottom heater is arranged between the crucible and the bottom heat insulation structure and is oppositely arranged with the bottom heat insulation structure in the up-down direction.

According to the single crystal growth furnace, the bottom heat preservation structure and the bottom heater are arranged oppositely in the up-down direction, the bottom heat preservation structure is provided with the reflecting part and the absorbing part, so that the bottom of the crucible is heated uniformly, the influence of unstable vortex on the bottom of the crucible is reduced, the temperature field is balanced, the uneven temperature distribution in molten soup is improved, the problems of uneven crystal growth and uneven oxygen content in a crystal bar are solved, the heat loss of the bottom of the crucible is reduced by the bottom heat preservation structure, the heat preservation effect is improved, and the problem of energy consumption waste is solved.

In some embodiments, the bottom insulation structure has an upper insulation layer and a lower insulation layer, the lower insulation layer being disposed proximate to the furnace body, forming first and second bottom insulation regions alternately disposed, one of the first and second bottom insulation regions being a reflective portion, the other of the first and second bottom insulation regions being an absorptive portion; the upper heat preservation layer is arranged close to the heater, a third bottom heat preservation area and a fourth bottom heat preservation area which are alternately arranged are formed, the third bottom heat preservation area is a reflecting portion or an absorbing portion, and the fourth bottom heat preservation area is of a hollow structure.

In some embodiments, the lower insulation layer is relatively rotatable with respect to the upper insulation layer between an initial position and a rotated position, the fourth bottom insulation region and the first bottom insulation region at least partially coinciding in an axial direction of the furnace chamber when the lower insulation layer is in the initial position with respect to the upper insulation layer; when the lower heat preservation layer is at the rotating position relative to the upper heat preservation layer, the fourth bottom heat preservation area and the second bottom heat preservation area are at least partially overlapped in the axial direction of the furnace chamber.

In some embodiments, the reflective portion is formed of molybdenum and the absorptive portion is formed of graphite.

In some embodiments, the single crystal growth furnace further comprises: and the bottom heat insulation driving device is connected with the bottom heat insulation structure and is used for driving the upper heat insulation layer and the lower heat insulation layer of the bottom heat insulation structure to rotate relatively.

In some embodiments, the bottom heater comprises: a chassis extending in a radial direction of the oven chamber; the first heating part extends horizontally and is arranged on the upper surface of the chassis; the second heating part is connected with the edge of the chassis and extends upwards at an included angle with the chassis, the first heating part of the heater is opposite to the absorption part of the bottom heat insulation structure, and the second heating part of the heater is opposite to the reflection part of the bottom heat insulation structure.

In some embodiments, the first heating portions and the second heating portions are alternately arranged, one second heating portion is disposed between two adjacent first heating portions, and one first heating portion is disposed between two adjacent second heating portions.

In some embodiments, the single crystal growth furnace further comprises: and the heater driving device is connected with the heater and used for driving the heater to rotate.

Additional aspects and advantages of the utility model will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the utility model.

Drawings

FIG. 1 is a schematic view of a single crystal growing furnace according to an embodiment of the present utility model;

FIG. 2 is a schematic view of the bottom insulation shown in FIG. 1, wherein the upper insulation is in an initial position;

FIG. 3 is a schematic view of the bottom insulation shown in FIG. 1, with the upper insulation in a rotated position;

FIG. 4 is a schematic rotational view of the bottom insulation shown in FIG. 1;

FIG. 5 is a schematic view of another embodiment of a bottom insulation structure wherein the upper insulation is in an initial position;

FIG. 6 is a schematic view of the bottom insulation shown in FIG. 5, with the upper insulation in a rotated position;

FIG. 7 is a schematic diagram of a rotation of the bottom insulation shown in FIG. 5;

FIG. 8 is a schematic view of a tray;

FIG. 9 is a schematic view of a bottom insulation structure;

FIG. 10 is a schematic diagram of a rotation of the bottom insulation shown in FIG. 9;

fig. 11 is a schematic view of the bottom heater shown in fig. 10.

Reference numerals:

100. a single crystal growth furnace;

1. a furnace body; 11. a furnace chamber;

2. a crucible; 21. a quartz crucible; 22. a graphite crucible;

3. a bottom heater; 31. a chassis; 32. a first heating section; 33. a second heating section;

4. a bottom insulation structure;

41. an upper heat preservation layer; 411. a third bottom insulation area; 412. a fourth bottom insulation area;

42. a lower heat-insulating layer; 421. a first bottom insulating region; 422. a second bottom insulating region;

43. a tray rack; 431. a ring plate; 432. a partition plate;

5. a guide cylinder.

Detailed Description

Embodiments of the present utility model are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present utility model and should not be construed as limiting the utility model.

A single crystal growing furnace 100 according to an embodiment of the present utility model is described below with reference to fig. 1 to 11.

As shown in fig. 1, a single crystal growth furnace 100 according to an embodiment of the present utility model includes: furnace body 1, crucible 2, bottom insulation structure 4 and bottom heater 3.

Specifically, a furnace chamber 11 is formed in the furnace body 1, the crucible 2 is arranged in the furnace chamber 11 and used for containing molten soup, the bottom heat-preserving structure 4 is provided with a reflecting part and an absorbing part, the bottom heat-preserving structure 4 is arranged in the furnace chamber 11, the bottom heat-preserving structure 4 is positioned below the crucible 2, the reflecting part and the absorbing part are alternately connected, wherein the heat reflectivity of the reflecting part is higher than that of the absorbing part, the heat absorptivity of the absorbing part is higher than that of the reflecting part, the bottom heater 3 is arranged between the crucible 2 and the bottom heat-preserving structure 4, and the bottom heater 3 and the bottom heat-preserving structure 4 are oppositely arranged in the up-down direction. Therefore, the single crystal growth furnace 100 is simple in structure, the bottom heat preservation structure 4 is ingenious in design, and the heat preservation effect of the bottom heat preservation structure 4 is optimized.

According to the single crystal growth furnace 100 provided by the embodiment of the utility model, the bottom heat preservation structure 4 and the bottom heater 3 are arranged oppositely in the vertical direction, and the bottom heat preservation structure 4 is provided with the reflecting part and the absorbing part, so that the bottom of the crucible 2 is heated uniformly, the influence of unstable vortex on the bottom of the crucible 2 is reduced, the temperature field is balanced, the uneven temperature distribution in molten soup is improved, the problems of uneven crystal growth and uneven oxygen content in crystal bars are solved, the heat loss of the bottom of the crucible 2 is reduced by the bottom heat preservation structure 4, the heat preservation effect is improved, and the problem of energy consumption waste is solved.

In some embodiments of the present utility model, as shown in fig. 1-3, the bottom insulation 4 has an upper insulation layer 41 and a lower insulation layer 42. The lower heat insulating layer 42 is arranged near the furnace body 1, and is formed with a first bottom heat insulating region 421 and a second bottom heat insulating region 422 which are alternately arranged, one of the first bottom heat insulating region 421 and the second bottom heat insulating region 422 is a reflecting portion, and the other of the first bottom heat insulating region 421 and the second bottom heat insulating region 422 is an absorbing portion. The upper heat preservation layer 41 is arranged close to the heater, and is formed with a third bottom heat preservation area 411 and a fourth bottom heat preservation area 412 which are alternately arranged, wherein the third bottom heat preservation area 411 is a reflecting part or an absorbing part, and the fourth bottom heat preservation area 412 is of a hollow structure. Therefore, the bottom heat preservation structure 4 is simple in structure and ingenious in design, the upper heat preservation layer 41 and the lower heat preservation layer 42 are matched, and temperature gradient manufacturing vortex is formed by changing the area ratio of the reflecting part to the absorbing part so as to counteract unstable heat convection in molten soup.

In some embodiments of the utility model, as shown in fig. 4-7, the lower insulation layer 42 is relatively rotatable with respect to the upper insulation layer 41 between an initial position and a rotated position, the fourth bottom insulation region 412 and the first bottom insulation region 421 at least partially coinciding in the axial direction of the oven chamber 11 when the lower insulation layer 42 is in the initial position with respect to the upper insulation layer 41; the fourth bottom insulation area 412 and the second bottom insulation area 422 at least partially coincide in the axial direction of the furnace chamber 11 when the lower insulation layer 42 is in a rotated position with respect to the upper insulation layer 41. Therefore, the method is beneficial to forming a temperature gradient to manufacture vortex, thereby counteracting unstable thermal convection in molten soup in the CZ method, improving the stability of a solid-liquid interface and avoiding the problem of impurity segregation.

Since molybdenum has a large heat reflectivity and a small heat absorptivity, graphite has a large heat absorptivity and a small heat reflectivity, the reflecting part is formed into molybdenum, the absorbing part is formed into graphite, and the area of molybdenum contained in the surface of the heat insulation structure opposite to the crucible 2 and the area of graphite form a temperature gradient in the circumferential direction of the crucible 2, so that vortex formed by the temperature gradient is opposite to vortex generated by crystal rotation, crucible rotation and crystal lifting in the CZ method, and unstable vortex in molten soup in the CZ method is further inhibited by the temperature gradient.

In some embodiments, the reflecting portion may be a molybdenum plate or an outer layer of the heat insulation structure, and the absorbing portion may be a graphite plate or an outer layer of the heat insulation structure.

In some embodiments, the bottom thermal insulation structure 4 includes a tray 43, as shown in fig. 8, the tray 43 having a ring plate 431 and a partition 432, the partition 432 being circumferentially spaced inward of the ring plate 431, the first bottom thermal insulation regions 421 and the second bottom thermal insulation regions 422 being alternately arranged on the tray 43 of the lower thermal insulation layer 42, the third bottom thermal insulation regions 411 being spaced on the tray 43 of the upper thermal insulation layer 41.

In some embodiments of the present utility model, the single crystal growing furnace 100 further comprises: the bottom heat preservation driving device is connected with the bottom heat preservation structure 4 and is used for driving the upper heat preservation layer 41 and the lower heat preservation layer 42 of the bottom heat preservation structure 4 to rotate relatively. The bottom insulation driving device is connected with the bottom insulation structure 4, and can drive the upper insulation layer 41 to rotate, can drive the lower insulation layer 42 to rotate, and can also drive the upper insulation layer 42 and the lower insulation layer 42 to rotate relatively.

In some embodiments of the present utility model, as shown in fig. 11, the bottom heater 3 includes: a bottom plate 31, the bottom plate 31 extending in a radial direction of the furnace chamber 11; the first heating part 32, the first heating part 32 extends along the horizontal direction, and the first heating part 32 is arranged on the upper surface of the chassis 31; the second heating portion 33, the second heating portion 33 is connected at the border of chassis 31, and is the contained angle and upwards extends between second heating portion 33 and the chassis 31, and the first heating portion 32 of bottom heater 3 sets up with the absorption portion of bottom insulation structure 4 relatively, and the second heating portion 33 of bottom heater 3 sets up with the reflection portion of bottom insulation structure 4 relatively. Thereby, the structure of the bottom heater 3 is simple, and the first heating portion 32 and the second heating portion 33 cooperate to improve the heating efficiency of the bottom heater 3.

In some embodiments of the present utility model, the first heating portions 32 and the second heating portions 33 are alternately arranged, one second heating portion 33 is disposed between two adjacent first heating portions 32, and one first heating portion 32 is disposed between two adjacent second heating portions 33. Thus, the alternating arrangement of the first heating portions 32 and the second heating portions 33 ensures uniform heating of the crucible 2, and improves the uneven temperature distribution in the molten steel.

In some embodiments of the present utility model, the single crystal growing furnace 100 further comprises: and the heater driving device is connected with the bottom heater 3 and is used for driving the bottom heater 3 to rotate. Therefore, the single crystal growing furnace 100 has a simple structure, the bottom heater 3 is driven to rotate, so that the crucible 2 is heated uniformly, and the condition of uneven temperature distribution in molten soup is improved.

In some embodiments of the present utility model, as shown in fig. 1, the single crystal growth furnace 100 further comprises: the guide cylinder 5 is arranged in the furnace chamber 11 in a cylindrical shape and is positioned above the molten soup, and the crystal bar is pulled by the pulling mechanism to pass through the guide cylinder 5 in the vertical direction and extend into the crucible 2. Thus, the single crystal growing furnace 100 has a simple overall structure, is convenient to assemble, and is uniform in crystal growth.

In one embodiment of the present utility model, crucible 2 comprises quartz crucible 212 and graphite crucible 222.

In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present utility model.

Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present utility model, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.

In the present utility model, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; the device can be mechanically connected, electrically connected and communicated; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.

In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present utility model. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.

While embodiments of the present utility model have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the utility model, the scope of which is defined by the claims and their equivalents.

Claims

1. A single crystal growing furnace, comprising:

the furnace body is internally provided with a furnace chamber;

the crucible is arranged in the furnace chamber and used for containing molten soup;

the bottom heat preservation structure is provided with a reflecting part and an absorbing part, the bottom heat preservation structure is arranged in the furnace chamber and positioned below the crucible, the reflecting part and the absorbing part are alternately connected, wherein the heat reflectivity of the reflecting part is higher than that of the absorbing part, and the heat absorptivity of the absorbing part is higher than that of the reflecting part;

the bottom heater is arranged between the crucible and the bottom heat insulation structure and is oppositely arranged with the bottom heat insulation structure in the up-down direction.

2. The single crystal growing furnace of claim 1, wherein the bottom insulating structure has an upper insulating layer and a lower insulating layer, the lower insulating layer being disposed adjacent to the furnace body, there being formed first and second bottom insulating regions alternately disposed, one of the first and second bottom insulating regions being a reflecting portion, the other of the first and second bottom insulating regions being an absorbing portion; the upper heat preservation layer is arranged close to the heater, a third bottom heat preservation area and a fourth bottom heat preservation area which are alternately arranged are formed, the third bottom heat preservation area is a reflecting portion or an absorbing portion, and the fourth bottom heat preservation area is of a hollow structure.

3. The single crystal growing furnace of claim 2, wherein the lower thermal insulation layer is relatively rotatable with respect to the upper thermal insulation layer between an initial position and a rotated position, the fourth bottom thermal insulation region and the first bottom thermal insulation region at least partially coinciding in an axial direction of the furnace chamber when the lower thermal insulation layer is in the initial position with respect to the upper thermal insulation layer; when the lower heat preservation layer is at the rotating position relative to the upper heat preservation layer, the fourth bottom heat preservation area and the second bottom heat preservation area are at least partially overlapped in the axial direction of the furnace chamber.

4. The single crystal growing furnace of claim 1, wherein the reflecting portion is formed of molybdenum and the absorbing portion is formed of graphite.

5. The single crystal growing furnace of claim 2, further comprising: and the bottom heat insulation driving device is connected with the bottom heat insulation structure and is used for driving the upper heat insulation layer and the lower heat insulation layer of the bottom heat insulation structure to rotate relatively.

6. The single crystal growing furnace of claim 1 wherein the bottom heater comprises:

a chassis extending in a radial direction of the oven chamber;

the first heating part extends horizontally and is arranged on the upper surface of the chassis;

the second heating part is connected with the edge of the chassis and extends upwards at an included angle with the chassis, the first heating part of the heater is opposite to the absorption part of the bottom heat insulation structure, and the second heating part of the heater is opposite to the reflection part of the bottom heat insulation structure.

7. The single crystal growing furnace of claim 6, wherein the first heating portions and the second heating portions are alternately arranged, one of the second heating portions is provided between two adjacent first heating portions, and one of the first heating portions is provided between two adjacent second heating portions.

8. The single crystal growing furnace of claim 6, further comprising: and the heater driving device is connected with the heater and used for driving the heater to rotate.